TIP33C TIP34C Datasheet

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TIP33C
TIP34C

COMPLEMENTARY SILICON POWER TRANSISTORS 

STMicroelectronics PREFERRED

SALESTYPES

COMPLEMENTARY PNP - NPN DEVICES

APPLICATIONS                                                    

GENERAL PURPOSE SWITCHING 

DESCRIPTION                                                       
The TIP33C is a silicon Epitaxial-Base NPN
power transistor mounted in TO-218 plastic
package. It is intented for use in linear and
switching applications.
The complementary PNP type is TIP34C.

INTERNAL  SCHEMATIC  DIAGRAM

October 1999

ABSOLUTE  MAXIMUM  RATINGS

Symbol

Parameter

Value

Unit

NPN

TIP33C

PNP

TIP34C

V

CBO

Collector-Base Voltage (I

E

 = 0)

140

V

V

CES

Collector-Emitter Voltage (V

BE

 = 0)

140

V

V

CEO

Collector-Emitter Voltage (I

B

 = 0)

100

V

V

EBO

Emitter-Base Voltage (I

C

 = 0)

7

V

I

C

Collector Current

10

A

I

CM

Collector Peak Current

12

A

I

B

Base Current

3

A

P

tot

Total Dissipation at T

c

 

≤ 

25

 

o

C

80

W

T

stg

Storage Temperature

-65 to 150

o

C

T

j

Max. Operating Junction Temperature

150

o

C

 For PNP types voltage and current values are negative.

1

2

3

TO-218

®

1/4

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THERMAL  DATA

R

thj-case

Thermal  Resistance  Junction-case                                Max

1.56

o

C/W

ELECTRICAL  CHARACTERISTICS  (T

case

 = 25 

o

C unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

I

CES

Collector Cut-off
Current (V

BE

 = 0)

V

CE

 = 140 V

400

µ

A

I

CEO

Collector Cut-off
Current (I

B

 = 0)

V

CE

 = 60 V

0.7

mA

I

EBO

Emitter Cut-off Current
(I

C

 = 0)

V

EB

 = 5 V

1

mA

V

CEO(sus)

Collector-Emitter
Sustaining Voltage
(I

B

 = 0)

I

C

 = 30 mA

100

V

V

CE(sat)

Collector-Emitter
Saturation Voltage

I

C

 = 3 A                  I

B

 = 0.3 A

I

C

 = 10 A                I

B

 = 2.5 A

1
4

V
V

V

BE(on)

Base-Emitter Voltage

I

C

 = 3 A                  V

CE

 = 4 V

I

C

 = 10 A                V

CE

 = 4 V

1.6

3

V
V

h

FE

DC Current Gain

I

C

 = 1 A                  V

CE

 = 4 V

I

C

 = 3 A                  V

CE

 = 4 V

40
20

100

h

fe

Small Signal Current
Gain

I

C

 = 0.5 A               V

CE

 = 10 V

f = 1 KHz

20

f

T

Transition frequency

I

C

 = 0.5 A               V

CE

 = 10 V

f = 1 MHz

3

MHz

t

on

t

s

t

f

RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time

VCC = 30V          I

C

 = 6 A

V

BB

 = - 6 V         I

B1

 = - I

B2

 = 0.6 A 

t

p

 = 20 

µ

s

0.6
0.4

1

µ

s

µ

s

µ

s

∗ 

Pulsed: Pulse duration = 300 

µ

s, duty cycle 1.5 %

TIP33C / TIP34C

2/4

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DIM.

mm

inch

MIN.

TYP.

MAX.

MIN.

TYP.

MAX.

A

4.7

4.9

0.185

0.193

C

1.17

1.37

0.046

0.054

D

2.5

0.098

E

0.5

0.78

0.019

0.030

F

1.1

1.3

0.043

0.051

G

10.8

11.1

0.425

0.437

H

14.7

15.2

0.578

0.598

L2

16.2 –

0.637

L3

18

0.708

L5

3.95

4.15

0.155

0.163

L6

31

1.220

R

12.2

0.480

Ø 4

4.1

0.157

0.161

R

A

C

D

E

H

F

G

L6

¯

L3

L2

L5

1 2 3

TO-218 (SOT-93) MECHANICAL DATA

P025A

TIP33C / TIP34C

3/4

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© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved

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TIP33C / TIP34C

4/4

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