TIP31A/31C
TIP32A/32B/32C
COMPLEMENTARY SILICON POWER
TRANSISTORS
APPLICATION
■
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The
TIP31A
and
TIP31C
are
silicon
Epitaxial-Base
NPN
transistors
mounted
in
Jedec TO-220 plastic package. They are intented
for use in medium power linear and switching
applications.
The complementary PNP types are TIP32A and
TIP32C respectively.
Also TIP32B is a PNP type.
October 1999
INTERNAL SCHEMATIC DIAGRAM
1
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Un it
NPN
TIP31A
TIP31C
PNP
TIP32A
T IP32B
TIP32C
V
CBO
Collector-Base Voltage (I
E
= 0)
60
80
100
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
60
80
100
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
3
A
I
CM
Collector Peak Current
5
A
I
B
Base Current
1
A
P
tot
T otal Dissipat ion at T
c ase
≤
25
o
C
T
amb
≤
25
o
C
40
2
W
W
T
s tg
Storage Temperature
-65 t o 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
For PNP types voltage and current values are negative
1/5
THERMAL DATA
R
thj -case
R
thj -amb
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
3.12
62. 5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
I
CEO
Collector Cut-of f
Current (I
B
= 0)
for T IP31A/ 32A
V
CE
= 30 V
for T IP31C/ 32B/32C
V
CE
= 60 V
0. 3
0. 3
mA
mA
I
CES
Collector Cut-of f
Current (V
BE
= 0)
for T IP31A/ 32A
V
CE
= 60 V
for T IP/ 32B
V
CE
= 80 V
for T IP31C/ 32C
V
CE
= 100 V
0. 2
0. 2
0. 2
mA
mA
mA
I
EBO
Emitter Cut-of f Current
(I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO (s us)
∗
Collector-Emitt er
Sustaining Volt age
(I
B
= 0)
I
C
= 30 mA
for TIP31A/32A
for TIP32B
for TIP31C/32C
60
80
100
V
V
V
V
CE(sat)
∗
Collector-Emitt er
Sat uration Voltage
I
C
= 3 A
I
B
= 375 mA
1. 2
V
V
BE(on)
∗
Base-Emitter Volt age
I
C
= 3 A
V
CE
= 4 V
1. 8
V
h
FE
∗
DC Current G ain
I
C
= 1 A
V
CE
= 4 V
I
C
= 3 A
V
CE
= 4 V
25
10
50
h
fe
Small Signall Current
Gain
I
C
= 0.5 A
V
CE
= 10 V f = 1 KHz
I
C
= 0.5 A
V
CE
= 10 V f = 1 MHz
20
3
∗
Pulsed : pulse duration = 300
µ
s, duty cycle
≤
2%
For PNP types voltage and current values are negative.
Safe Operating Area
Derating Curves
TIP31A/TIP31C/TIP32A/TIP32B/TIP32C
2/5
DC Current Gain (NPN type)
Collector-Emitter Saturation Voltage (NPN type)
Base-Emitter Saturation Voltage (NPN type)
DC Current Gain (PNP type)
Collector-Emitter Saturation Voltage (PNP type)
Collector-Base Capacitance (PNP type)
TIP31A/TIP31C/TIP32A/TIP32B/TIP32C
3/5
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
TO-220 MECHANICAL DATA
TIP31A/TIP31C/TIP32A/TIP32B/TIP32C
4/5
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