TIP140/141/142
TIP145/146/147
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
■
TIP141, TIP142, TIP145 AND TIP147 ARE
SGS-THOMSON PREFERRED SALESTYPES
■
COMPLEMENTARY PNP - NPN DEVICES
■
MONOLITHIC DARLINGTON
CONFIGURATION
■
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
■
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The TIP140, TIP141 and TIP142 are silicon
epitaxial-base NPN power transistors in
monolithic Darlington configuration and are
mounted in TO-218 plastic package. They are
intented for use in power linear and switching
applications.
The complementary PNP types are TIP145,
TIP146 and TIP147 respectively.
INTERNAL SCHEMATIC DIAGRAM
June 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
TIP140
TIP141
TIP142
PNP
TIP145
TIP146
TIP147
V
CBO
Collector-Base Voltage (I
E
= 0)
60
80
100
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
60
80
100
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
10
A
I
CM
Collector Peak Current
20
A
I
B
Base Current
0.5
A
P
tot
Total Dissipation at T
case
≤
25
o
C
125
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
For PNP types voltage and current values are negative.
R
1
Typ. = 5 K
Ω
R
2
Typ. = 150
Ω
1
2
3
TO-218
1/4
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
1
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
for TIP140/145 V
CB
= 60 V
for TIP141/146 V
CB
= 80 V
for TIP142/147 V
CB
= 100 V
1
1
1
mA
mA
mA
I
CEO
Collector Cut-off
Current (I
B
= 0)
for TIP140/145 V
CE
= 30 V
for TIP141/146 V
CE
= 40 V
for TIP142/147 V
CE
= 50 V
2
2
2
mA
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EBO
= 5 V
2
mA
V
CEO(sus)
* Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 30 mA
for TIP140/145
for TIP141/146
for TIP142/147
60
80
100
V
V
V
V
CE(sat)
*
Collector-Emitter
Saturation Voltage
I
C
= 5 A I
B
= 10 mA
I
C
= 10 A I
B
= 40 mA
2
3
V
V
V
BE(on)
*
Base-Emitter Voltage
I
C
= 10 A V
CE
= 4 V
3
V
h
FE
*
DC Current Gain
I
C
= 5 A V
CE
= 4 V
I
C
= 10 A V
CE
= 4 V
1000
500
t
on
Turn-on Time
I
C
= 10 A I
B1
= 40 mA
I
B2
= -40 mA R
L
= 3
Ω
0.9
µ
s
t
off
Turn-off Time
4
µ
s
For PNP types voltage and current values are negative.
TIP140 / TIP141 / TIP142 / TIP145 / TIP146 / TIP147
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.7
4.9
0.185
0.193
C
1.17
1.37
0.046
0.054
D
2.5
0.098
E
0.5
0.78
0.019
0.030
F
1.1
1.3
0.043
0.051
G
10.8
11.1
0.425
0.437
H
14.7
15.2
0.578
0.598
L2
–
16.2 –
0.637
L3
18
0.708
L5
3.95
4.15
0.155
0.163
L6
31
1.220
R
–
12.2
–
0.480
Ø 4
4.1
0.157
0.161
R
A
C
D
E
H
F
G
L6
¯
L3
L2
L5
1 2 3
TO-218 (SOT-93) MECHANICAL DATA
P025A
TIP140 / TIP141 / TIP142 / TIP145 / TIP146 / TIP147
3/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
TIP140 / TIP141 / TIP142 / TIP145 / TIP146 / TIP147
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