1N5820 1N5821 1N5822 Datasheet

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1N582x

July  1999 - Ed: 2A

LOW DROP POWER SCHOTTKY RECTIFIER

®

Axial Power Schottky rectifier suited for Switch
Mode Power Supplies and high frequency DC to
DC converters. Packaged in DO-201AD these
devices are intended for use in low voltage, high
frequency inverters, free wheeling, polarity
protection and small battery chargers.

DESCRIPTION

VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW FORWARD VOLTAGE DROP

FEATURES AND BENEFITS

Symbol

Parameter

Value

Unit

1N5820 1N5821 1N5822

V

RRM

Repetitive peak reverse voltage

20

30

40

V

I

F(RMS)

RMS forward current

10

A

I

F(AV)

Average forward current

T

L

 = 100

°

C

δ 

= 0.5

3

A

T

L

 = 110

°

C

δ 

= 0.5

3

3

A

I

FSM

Surge non repetitive forward current

tp = 10 ms
Sinusoidal

80

A

T

stg

Storage temperature range

- 65  to + 150

°

C

Tj

Maximum operating junction temperature * 

150

°C

dV/dt

Critical rate of rise of reverse voltage

10000

V/

µ

s

ABSOLUTE  RATINGS (limiting values) 

I

F(AV)

3 A

V

RRM

40 V

T

j

150°C

V

(max)

0.475 V

MAIN PRODUCTS CHARACTERISTICS

DO-201AD

*  : 

dPtot

dTj

  

<

  

1

Rth

(

j

a

)

  thermal  runaway condition for a diode on its own heatsink

1/5

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Symbol

Parameter

Tests Conditions

1N5820 1N5821 1N5822

Unit

I

R

 *

Reverse leakage
current

Tj = 25

°

C

V

R

 = V

RRM

2

2

2

mA

Tj = 100

°

C

20

20

20

mA

V

F

 *

Forward voltage drop

Tj = 25

°

C

I

F

 =  3 A

0.475

0.5

0.525

V

Tj = 25

°

C

I

F

 =  9.4 A

0.85

0.9

0.95

V

Pulse test :   * tp = 380 

µ

s, 

δ

 < 2%

To evaluate the conduction losses use the following equations :
P = 0.33 x I

F(AV)

 + 0.035 I

F

2

(RMS ) 

for 1N5820 / 1N5821

P = 0.33 x I

F(AV)

 + 0.060 I

F

2

(RMS ) 

for 1N5822

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Value

Unit

R

th (j-a)

Junction to ambient

Lead length = 10 mm

80

°

C/W

R

th (j-l)

Junction to lead

Lead length = 10 mm

25

°

C/W

THERMAL  RESISTANCES

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

PF(av)(W)

IF(av) (A)

T

δ

=tp/T

tp

δ

= 0.2

δ

= 0.5

δ

= 1

δ

= 0.05

δ

= 0.1

Fig. 1:  Average forward power dissipation versus
average forward current (1N5820/1N5821).

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

PF(av)(W)

IF(av) (A)

T

δ

=tp/T

tp

δ

= 0.2

δ

= 0.5

δ

= 1

δ

= 0.05

δ

= 0.1

Fig. 2: Average forward power dissipation versus
average forward current (1N5822).

1N582x

2/5

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0

25

50

75

100

125

150

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

IF(av)(A)

Tamb(°C)

T

δ

=tp/T

tp

Rth(j-a)=80°C/W

Rth(j-a)=Rth(j-l)=25°C/W

Fig. 2-1: Average forward current versus ambient
temperature (

δ

=0.5) (1N5820/1N5821).

1E-3

1E-2

1E-1

1E+0

0

2

4

6

8

10

12

14

16

IM(A)

t(s)

Ta=100°C

Ta=75°C

Ta=25°C

I

M

t

δ

=0.5

Fig. 3-1:  Non repetitive surge peak forward
current versus overload duration (maximum
values) (1N5820/1N5821). 

1E-1

1E+0

1E+1

1E+2

1E+3

0.0

0.2

0.4

0.6

0.8

1.0

Zth(j-a)/Rth(j-a)

T

δ

=tp/T

tp

tp(s)

δ

= 0.1

δ

= 0.2

δ

= 0.5

Single pulse

Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
printed circuit board, e(Cu)=35mm, recommended
pad layout).

0

25

50

75

100

125

150

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

IF(av)(A)

Tamb(°C)

T

δ

=tp/T

tp

Rth(j-a)=80°C/W

Rth(j-a)=Rth(j-l)=25°C/W

Fig. 2-2: Average forward current versus ambient
temperature (

δ

=0.5) (1N5822).

1E-3

1E-2

1E-1

1E+0

0

1

2

3

4

5

6

7

8

9

10

11

12

IM(A)

t(s)

Ta=100°C

Ta=75°C

Ta=25°C

I

M

t

δ

=0.5

Fig. 3-2:  Non repetitive surge peak forward
current versus overload duration (maximum
values) (1N5822).

1

2

5

10

20

40

10

100

600

C(pF)

VR(V)

1N5822

1N5820

1N5821

F=1MHz

Tj=25°C

Fig. 5: Junction capacitance versus reverse
voltage applied (typical values).

1N582x

3/5

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0

5

10

15

20

25

30

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

IR(mA)

VR(V)

Tj=100°C

Tj=25°C

1N5820

1N5821

Tj=125°C

Fig. 6-1: Reverse leakage current versus reverse
voltage applied  (typical values) (1N5820/1N5821).

0

5

10

15

20

25

30

35

40

1E-3

1E-2

1E-1

1E+0

1E+1

5E+1

IR(mA)

VR(V)

Tj=100°C

Tj=25°C

Tj=125°C

Fig. 6-2: Reverse leakage current versus reverse
voltage applied  (typical values) (1N5822).

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

0.01

0.10

1.00

10.00

50.00

IFM(A)

VFM(V)

Tj=25°C

Tj=100°C

Tj=125°C

Fig. 7-1: Forward voltage drop versus forward
current (typical values) (1N5820/1N5821).

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.01

0.10

1.00

10.00

50.00

IFM(A)

VFM(V)

Tj=25°C

Tj=100°C

Tj=125°C

Fig. 7-2: Forward voltage drop versus forward
current (typical values) (1N5822).

1

10

100

1000

0

20

40

60

80

100

IFSM(A)

Number of cycles

F=50Hz

Tj initial=25°C

Fig. 8: Non repetitive surge peak forward current
versus number of cycles.

1N582x

4/5

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Ordering type

Marking

Package

Weight

Base qty

Delivery mode

1N582x

Part number
cathode ring

DO-201AD

1.12g

600

Ammopack

1N582xRL

Part number
cathode ring

DO-201AD

1.12g

1900

Tape & reel

Epoxy meets UL94,V0

PACKAGE MECHANICAL DATA
DO-201AD plastic

B

A

E

E

ØD

ØD

ØC

B

note 2

note 1

note 1

REF.

DIMENSIONS

NOTES

Millimeters

Inches

Min.

Max.

Min.

Max.

A

9.50

0.374

1 - The lead diameter 

 D is not  controlled over zone E 

2 - The minimum axial length within which the device may be
placed with its leads bent at right angles is 0.59"(15 mm)

B

25.40

1.000

 C

5.30

0.209

 D

1.30

0.051

E

1.25

0.049

1N582x

5/5

Maker
ST Microelectronics
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