2016 Microchip Technology Inc.
DS20005559A-page 1
VN2210
Features
• Free from Secondary Breakdown
• Low Power Drive Requirement
• Ease of Paralleling
• Low C
ISS
and Fast Switching Speeds
• Excellent Thermal Stability
• Integral Source-drain Diode
• High Input Impedance and High Gain
Applications
• Motor Controls
• Converters
• Amplifiers
• Switches
• Power Supply Circuits
• Drivers (Relays, Hammers, Solenoids, Lamps,
Memory, Displays, Bipolar Transistors, etc.)
General Description
VN2210 is an Enhancement-mode (normally-off)
transistor that utilizes a vertical Double-diffused
Metal-Oxide Semiconductor (DMOS) structure and a
well-proven silicon gate manufacturing process. This
combination produces a device with the power
handling capabilities of bipolar transistors as well as
the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of
all MOS structures, this device is free from thermal
runaway and thermally induced secondary breakdown.
Vertical DMOS Field-Effect Transistors (FETs) are
ideally suited to a wide range of switching and
amplifying applications where high breakdown voltage,
high input impedance, low input capacitance and fast
switching speeds are desired.
Package Type
TO-39
TO-92
GATE
SOURCE
DRAIN
GATE
SOURCE
DRAIN
s
N-Channel Enhancement-Mode Vertical DMOS FET
VN2210
DS20005559A-page 2
2016 Microchip Technology Inc.
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Drain-to-source Voltage ........................................................................................................................................BV
DSS
Drain-to-gate Voltage ............................................................................................................................................BV
DGS
Gate-to-source Voltage ........................................................................................................................................... ±20V
Operating and Storage Temperatures ................................................................................................. –55°C to +150°C
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at those or any other conditions above those
indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
Electrical Specifications: T
A
= 25°C unless otherwise specified.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
DC PARAMETERS (
Note 1
unless otherwise specified)
Drain-to-source Breakdown Voltage
BV
DSS
100
—
—
V
V
GS
= 0V, I
D
= 10 mA
Gate Threshold Voltage
V
GS(th)
0.8
—
2.4
V
V
GS
= V
DS
, I
D
= 10 mA
Change in V
GS(th)
with Temperature
∆V
GS(th)
—
–4.3
–5.5
mV/°C V
GS
= V
DS
, I
D
= 10 mA (
Note 2
)
Gate Body Leakage Current
I
GSS
—
—
100
nA
V
GS
= ±20V, V
DS
= 0V
Zero Gate Voltage Drain Current
I
DSS
—
—
50
µA
V
GS
= 0V, V
DS
= Maximum rating
—
—
10
mA
V
DS
= 0.8 maximum rating,
V
GS
= 0V, T
A
= 125°C (
Note 2
)
ON-State Drain Current
I
D(ON)
3
4.5
—
A
V
GS
= 5V, V
DS
= 25V
8
17
—
V
GS
= 10V, V
DS
= 25V
Static Drain-to-source ON-State Resis-
tance
R
DS(ON)
—
0.4
0.5
Ω
V
GS
= 5V, I
D
= 1A
—
0.27
0.35
V
GS
= 10V, I
D
= 4A
Change in R
DS(ON)
with Temperature
∆R
DS(ON)
—
0.85
1.2
%/°C
V
GS
= 10V, I
D
= 4A (
Note 2
)
AC PARAMETERS (
Note 2
)
Forward Transconductance
G
FS
1200
—
—
mmho V
DS
= 25V, I
D
= 2A
Input Capacitance
C
ISS
—
300
500
pF
V
GS
= 0V, V
DS
= 25V, f = 1 MHz
Common Source Output Capacitance
C
OSS
—
125
200
Reverse Transfer Capacitance
C
RSS
—
50
65
Turn-on Time
t
d(ON)
—
10
15
ns
V
DD
= 25V, I
D
= 2A,
R
GEN
= 10Ω
Rise Time
t
r
—
10
15
Turn-off Time
t
d(OFF)
—
50
65
Fall Time
t
f
—
30
50
DIODE PARAMETERS
Diode Forward Voltage Drop
V
SD
—
1
1.6
V
V
GS
= 0V, I
SD
= 4A (
Note 1
)
Reverse Recovery Time
t
rr
—
500
—
ns
V
GS
= 0V, I
SD
= 1A (
Note 2
)
Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated.
(Pulse test: 300 µs pulse, 2% duty cycle)
2: Specification is obtained by characterization and is not 100% tested.
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise specified, for all specifications T
A
=T
J
= +25°C.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
TEMPERATURE RANGES
Operating Temperature
T
A
–55
—
+150
°C
Storage Temperature
T
S
–55
—
+150
°C
PACKAGE THERMAL RESISTANCES
TO-39
JA
—
N/A
—
—
TO-92
JA
—
132
—
°C/W
THERMAL CHARACTERISTICS
Package
I
D
(
Note 1
)
(Continuous)
(A)
I
D
(Pulsed)
(A)
Power Dissipation at
T
C
= 25°C
(W)
I
DR
(
Note 1
)
(A)
I
DRM
(A)
TO-39
1.7
10
0.36
1.7
10
TO-92
1.2
8
0.74
1.2
8
Note 1: I
D
(continuous) is limited by maximum T
j
.
2016 Microchip Technology Inc.
DS20005559A-page 3
VN2210
VN2210
DS20005559A-page 4
2016 Microchip Technology Inc.
2.0
TYPICAL PERFORMANCE CURVES
BV
DSS
(normalized)
T
j
(
O
C)
-50 0 50 100 150
1.1
1.0
0.9
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g. outside specified power supply range) and therefore outside the warranted range.
FIGURE 2-1:
BV
DSS
Variation with
Temperature.
V
GS
(volts)
I
D
(amperes)
0 2.0 4.0 6.0 8.0 10
10
8.0
6.0
4.0
2.0
0
T
A
= -55
O
C
V
DS
= 25
O
C
25
O
C
150
O
C
FIGURE 2-2:
Transfer Characteristics.
500
375
250
125
0
C (picofarads)
V
DS
(volt)
0 10 20 30 40
f = 1.0MHz
C
ISS
C
OSS
C
RSS
FIGURE 2-3:
Capacitance vs.
Drain-to-source Voltage.
FIGURE 2-4:
On-resistance vs. Drain
Current.
R
DS(ON)
(ohms)
I
D
(amperes)
1.0
0.8
0.6
0.4
0.2
0
V
GS
= 5.0V
0 4.0 8.0 12 16 20
V
GS
= 10V
V
GS(th)
(normalized)
R
DS(ON)
(normalized)
1.2
1.1
1.0
0.9
0.8
0.7
2.0
1.6
1.2
0.8
0.4
V
GS(th)
@ 10mA
R
DS(ON)
@ 10V, 4.0A
T
j
(
O
C)
-50 0 50 100 150
FIGURE 2-5:
V
GS
and RV
DS
Variation
with Temperature.
Q
G
(nanocoulombs)
V
GS
(volts)
10
8.0
6.0
4.0
2.0
0
0 2.0 4.0 6.0 8.0 10
300 pF
V
DS
= 10V
900 pF
V
DS
= 40V
FIGURE 2-6:
Gate Drive Dynamic
Characteristics.
2016 Microchip Technology Inc.
DS20005559A-page 5
VN2210
FIGURE 2-7:
20
16
12
8.0
4.0
0
V
DS
(volts)
I
D
(amperes)
0 10 20 30 40 50
4V
3V
6V
8V
V
GS
= 10V
Output Characteristics.
4.0
3.2
2.4
1.6
0.8
0
0 0.8 1.6 2.4 3.2 4.0
G
FS
(siemens)
I
D
(amperes)
T
A
= 55
O
C
V
DS
= 25
O
C
25
O
C
150
O
C
FIGURE 2-8:
Transconductance vs. Drain
Current.
10
1.0
0.1
0.01
V
DS
(volts)
I
D
(amperes)
0.1 1.0 10 100
T
C
= 25
O
C
TO-92 (pulsed)
TO-39 (pulsed)
TO-92 (DC)
TO-39 (DC)
FIGURE 2-9:
Maximum Rated Safe
Operating Area.
FIGURE 2-10:
0 2.0 4.0 6.0 8.0 10
6V
4V
3V
8V
V
DS
(volts)
I
D
(amperes)
V
GS
= 10V
20
16
12
8.0
4.0
0
Saturation Characteristics.
0 25 50 75 100 125 150
10
8.0
6.0
4.0
2.0
0
T
C
(
O
C)
P
D
(watts)
TO-92
TO-39
FIGURE 2-11:
Power Dissipation vs. Case
Temperature.
Thermal Resistance (normalize)
1.0
0.8
0.6
0.4
0.2
0
0.001 0.01 0.1 1.0 10
t
P
(seconds)
TO-92
T
C
= 25
O
C
P
D
= 1.0W
FIGURE 2-12:
Thermal Response
Characteristics.
VN2210
DS20005559A-page 6
2016 Microchip Technology Inc.
3.0
PIN DESCRIPTION
Table 3-1
shows the description of pins in TO-39 and
TO-92.
TABLE 3-1:
TO-39/TO-92 PIN FUNCTION TABLE
Pin Number
TO-39
TO-92
Description
1
Source
Source
Source
2
Gate
Gate
Gate
3
Drain
Drain
Drain
2016 Microchip Technology Inc.
DS20005559A-page 7
VN2210
4.0
FUNCTIONAL DESCRIPTION
Figure 4-1
illustrates the switching waveforms and test
circuit for VN2210.
90%
10%
90%
90%
10%
10%
Pulse
Generator
VDD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
r
INPUT
INPUT
OUTPUT
10V
VDD
R
GEN
0V
0V
t
f
FIGURE 4-1:
Switching Waveforms and Test Circuit.
PRODUCT SUMMARY
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(Maximum)
(Ω)
V
GS(th)
(Maximum)
(V)
100
0.35
2.4
VN2210
DS20005559A-page 8
2016 Microchip Technology Inc.
5.0
PACKAGING INFORMATION
5.1
Package Marking Information
Legend: XX...X
Product Code or Customer-specific information
Y
Year code (last digit of calendar year)
YY
Year code (last 2 digits of calendar year)
WW
Week code (week of January 1 is week ‘01’)
NNN
Alphanumeric traceability code
Pb-free JEDEC
®
designator for Matte Tin (Sn)
*
This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Pre-plated
Note:
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for product code or customer-specific information. Package may or
not include the corporate logo.
3
e
3
e
3-Lead TO-39
Example
NNN
YYWW
XXXXXXXXXX
e4
789
1611
VN2210
e4
3-lead TO-92
YWWNNN
XXXXXX
XX
Example
613347
VN2210
N3
e3
e3
2016 Microchip Technology Inc.
DS20005559A-page 9
VN2210
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
VN2210
DS20005559A-page 10
2016 Microchip Technology Inc.
3-Lead TO-92 Package Outline (L/LL/N3)
Symbol
A
b
c
D
E
E1
e
e1
L
Dimensions
(inches)
MIN
.170
.014
†
.014
†
.175
.125
.080
.095
.045
.500
NOM
-
-
-
-
-
-
-
-
-
MAX
.210
.022
†
.022
†
.205
.165
.105
.105
.055
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
S
t
D
# DSPD 3TO92N3 V
i
E041009
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.