2006-2014 Microchip Technology Inc.
DS20001987C-page 1
TC4451/TC4452
Features:
• High Peak Output Current: 13A (typical)
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Continuous Output Current: 2.6A
(maximum)
• Matched Fast Rise and Fall Times:
- 21 ns with 10,000 pF Load
- 42 ns with 22,000 pF Load
• Matched Short Propagation Delays: 44 ns
(typical)
• Low Supply Current:
- With Logic ‘1’ Input – 140 µA (typical)
- With Logic ‘0’ Input – 40 µA (typical)
• Low Output Impedance: 0.9
(typical)
• Latch-Up Protected: Withstands 1.5A Output
Reverse Current
• Input Withstands Negative Inputs Up To 5V
• Pin-Compatible with the TC4420/TC4429,
TC4421/TC4422 and TC4421A/TC4422A
MOSFET Drivers
• Space-Saving, Thermally-Enhanced, 8-Pin DFN-
S Package
Applications:
• Line Drivers for Extra Heavily-Loaded Lines
• Pulse Generators
• Driving the Largest MOSFETs and IGBTs
• Local Power On/Off Switch
• Motor and Solenoid Driver
• LF Initiator
General Description:
The TC4451/TC4452 are single-output MOSFET
drivers. These devices are high-current buffers/drivers
capable of driving large MOSFETs and insulated gate
bipolar transistors (IGBTs). The TC4451/TC4452 have
matched output rise and fall times, as well as matched
leading and falling-edge propagation delay times. The
TC4451/TC4452 devices also have very low cross-
conduction current, reducing the overall power
dissipation of the device.
These devices are essentially immune to any form of
upset, except direct overvoltage or over-dissipation.
They cannot be latched under any conditions within
their power and voltage ratings. These parts are not
subject to damage or improper operation when up to
5V of ground bounce is present on their ground
terminals. They can accept, without damage or logic
upset, more than 1.5A inductive current of either
polarity being forced back into their outputs. In addition,
all terminals are fully protected against electrostatic
discharge (ESD) up to 4.0 kV (HBM) and 400V (MM).
The TC4451/TC4452 inputs may be driven directly
from either TTL or CMOS (3V to 18V). Moreover,
300 mV of hysteresis is built into the input, providing
noise immunity and enabling the device to be driven
from slowly rising or falling waveforms.
With a wide operating temperature range and having
both surface-mount and pin-through-hole packages,
the TC4451/TC4452 family of 12A MOSFET drivers fits
into any application where high gate/line capacitance
drive is required.
12A High-Speed MOSFET Drivers
TC4451/TC4452
DS20001987C-page 2
2006-2014 Microchip Technology Inc.
Package Types
8-Pin PDIP/SOIC
(
1
,
2
)
1
2
3
4
V
DD
5
6
7
8
OUTPUT
GND
V
DD
INPUT
NC
GND
OUTPUT
5-Pin TO-220
(
1
,
2
)
V
DD
GND
INP
U
T
GND
OUTP
UT
TC4451
Tab is Common to V
DD
Note 1: Duplicate pins must both be connected for proper operation.
2: Exposed thermal pad (EP) of the DFN-S package is electrically isolated; see
Table 3-1
.
TC4451
8-Pin DFN-S
(
1
,
2
)
V
DD
INPUT
NC
GND
V
DD
OUTPUT
GND
OUTPUT
TC4451
1
2
3
4
8
7
6
5
EP
9
1
2
3
4
5
6
7
8
V
DD
INPUT
NC
GND
TC4452
V
DD
OUTPUT
GND
OUTPUT
V
DD
INPUT
NC
GND
TC4452
V
DD
OUTPUT
GND
OUTPUT
1
2
3
4
8
7
6
5
EP
9
TC4452
2006-2014 Microchip Technology Inc.
DS20001987C-page 3
TC4451/TC4452
Functional Block Diagram
Effective
Input
Output
Input
GND
V
DD
300 mV
4.7V
C = 25 pF
Inverting
Non-Inverting
140 µA
Cross-Conduction
Reduction and Pre-Drive
Circuitry
Output
TC4451
TC4452
TC4451/TC4452
DS20001987C-page 4
2006-2014 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage .....................................................+20V
Input Voltage .................... (V
DD
+ 0.3V) to (GND – 5V)
Input Current (V
IN
> V
DD
) ...................................50 mA
† Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, T
A
= +25°C with 4.5V
V
DD
18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Input
Logic ‘1’, High Input Voltage
V
IH
2.4
1.5
—
V
Logic ‘0’, Low Input Voltage
V
IL
—
1.3
0.8
V
Input Current
I
IN
-10
—
+10
µA
0V
V
IN
V
DD
Input Voltage
V
IN
-5
—
V
DD
+ 0.3
V
Output
High Output Voltage
V
OH
V
DD
– 0.025
—
—
V
DC Test
Low Output Voltage
V
OL
—
—
0.025
V
DC Test
Output Resistance, High
R
OH
—
1.0
1.5
I
OUT
= 10 mA, V
DD
= 18V
Output Resistance, Low
R
OL
—
0.9
1.5
I
OUT
= 10 mA, V
DD
= 18V
Peak Output Current
I
PK
—
13
—
A
V
DD
= 18V
Continuous Output Current
I
DC
2.6
—
—
A
10V
V
DD
18V (
Note 2
,
Note 3
)
Latch-Up Protection
Withstand Reverse Current
I
REV
—
>1.5
—
A
Duty cycle
2%, t 300 µs
Switching Time (
Note 1
)
Rise Time
t
R
—
30
40
ns
Figure 4-1
, C
L
= 15,000 pF
Fall Time
t
F
—
32
40
ns
Figure 4-1
, C
L
= 15,000 pF
Propagation Delay Time
t
D1
—
44
52
ns
Figure 4-1
, C
L
= 15,000 pF
Propagation Delay Time
t
D2
—
44
52
ns
Figure 4-1
, C
L
= 15,000 pF
Power Supply
Power Supply Current
I
S
—
140
200
µA
V
IN
= 3V
—
40
100
µA
V
IN
= 0V
Operating Input Voltage
V
DD
4.5
—
18.0
V
V
DD
Ramp Rate
SV
DD
0.2
—
—
V/ms
Note 1:
Switching times ensured by design.
2:
Tested during characterization, not production tested.
3:
Valid for AT and MF packages only. T
A
= +25°C.
2006-2014 Microchip Technology Inc.
DS20001987C-page 5
TC4451/TC4452
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise noted, over the operating temperature range with 4.5V
V
DD
18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Input
Logic ‘1’, High Input Voltage
V
IH
2.4
—
—
V
Logic ‘0’, Low Input Voltage
V
IL
—
—
0.8
V
Input Current
I
IN
-10
—
+10
µA
0V
V
IN
V
DD
Output
High Output Voltage
V
OH
V
DD
– 0.025
—
—
V
DC Test
Low Output Voltage
V
OL
—
—
0.025
V
DC Test
Output Resistance, High
R
OH
—
—
2.2
I
OUT
= 10 mA, V
DD
= 18V
Output Resistance, Low
R
OL
—
—
2.0
I
OUT
= 10 mA, V
DD
= 18V
Switching Time (
Note 1
)
Rise Time
t
R
—
35
60
ns
Figure 4-1
, C
L
= 15,000 pF
Fall Time
t
F
—
38
60
ns
Figure 4-1
, C
L
= 15,000 pF
Propagation Delay Time
t
D1
—
55
65
ns
Figure 4-1
, C
L
= 15,000 pF
Propagation Delay Time
t
D2
—
55
65
ns
Figure 4-1
, C
L
= 15,000 pF
Power Supply
Power Supply Current
I
S
—
200
400
µA
V
IN
= 3V
—
50
150
µA
V
IN
= 0V
Operating Input Voltage
V
DD
4.5
—
18.0
V
V
DD
Ramp Rate
SV
DD
0.2
—
—
V/ms
Note 1:
Switching times ensured by design.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V
V
DD
18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Temperature Ranges
Specified Temperature Range (V)
T
A
-40
—
+125
°C
Maximum Junction Temperature
T
J
—
—
+150
°C
Storage Temperature Range
T
A
-65
—
+150
°C
Package Thermal Resistances
Thermal Resistance, 5L-TO-220
JA
—
39.5
—
°C/W
Without heat sink
Thermal Resistance, 8L-6x5 DFN-S
JA
—
35.7
—
°C/W
Typical four-layer board with
vias to ground plane
Thermal Resistance, 8L-PDIP
JA
—
89.3
—
°C/W
Thermal Resistance, 8L-SOIC
JA
—
149.5
—
°C/W
TC4451/TC4452
DS20001987C-page 6
2006-2014 Microchip Technology Inc.
2.0
TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
18V.
FIGURE 2-1:
Rise Time vs. Supply
Voltage.
FIGURE 2-2:
Rise Time vs. Capacitive
Load.
FIGURE 2-3:
Fall Time vs. Supply
Voltage.
FIGURE 2-4:
Fall Time vs. Capacitive
Load.
FIGURE 2-5:
Rise and Fall Times vs.
Temperature.
FIGURE 2-6:
Crossover Energy vs.
Supply Voltage.
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0
20
40
60
80
100
120
140
160
180
200
220
4
6
8
10
12
14
16
18
Rise T
ime (ns)
Supply Voltage (V)
47,000 pF
22,000 pF
10,000 pF
0
50
100
150
200
250
300
100
1000
10000
100000
Rise T
ime (ns)
Capacitive Load (pF)
5V
18V
10V
0
20
40
60
80
100
120
140
160
180
200
220
4
6
8
10
12
14
16
18
Fall T
ime
(ns)
Supply Voltage (V)
47,000 pF
22,000 pF
10,000 pF
0
50
100
150
200
250
300
100
1000
10000
100000
Fall T
ime
(ns)
Capacitive Load (pF)
5V
18V
10V
0
10
20
30
40
-40 -25 -10
5
20
35
50
65
80
95 110 125
Rise and Fall T
imes (ns)
Temperature (°C)
t
RISE
t
FALL
V
DD
= 18V
1E-09
1E-08
1E-07
4
6
8
10
12
14
16
18
Crossover Energy
(A·
sec)
Supply Voltage (V)
10
-7
10
-8
10
-9
2006-2014 Microchip Technology Inc.
DS20001987C-page 7
TC4451/TC4452
Note: Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
18V.
FIGURE 2-7:
Propagation Delay vs.
Supply Voltage.
FIGURE 2-8:
Propagation Delay vs. Input
Amplitude.
FIGURE 2-9:
Propagation Delay vs.
Temperature.
FIGURE 2-10:
Quiescent Supply Current
vs. Supply Voltage.
FIGURE 2-11:
Quiescent Supply Current
vs. Temperature.
FIGURE 2-12:
Input Threshold vs.
Temperature.
40
45
50
55
60
65
70
75
80
85
90
95
4
6
8
10
12
14
16
18
Propagation Delay
(ns)
Supply Voltage (V)
t
D2
t
D1
C
LOAD
= 15,000 pF
V
IN
= 5V
40
45
50
55
60
65
70
75
80
85
90
95
100
2
3
4
5
6
7
8
9
10
Propagation Delay
(ns)
Input Amplitude (V)
t
D2
t
D1
C
LOAD
= 15,000 pF
V
DD
= 10V
30
35
40
45
50
55
60
-40 -25 -10
5
20
35
50
65
80
95 110 125
Propagation Delay
(ns)
Temperature (
o
C)
t
D2
t
D1
V
DD
= 10V
V
IN
= 5V
C
LOAD
= 15,000 pF
20
40
60
80
100
120
140
4
6
8
10
12
14
16
18
I
QUIESCENT
(µA)
Supply Voltage (V)
INPUT = High
INPUT = Low
20
40
60
80
100
120
140
160
180
200
220
-40 -25 -10
5
20 35 50 65 80 95 110 125
I
QUIESCENT
(µA)
Temperature (
o
C)
INPUT = High
V
DD
= 18 V
INPUT = Low
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
-40 -25 -10
5
20
35
50
65
80
95 110 125
Input Threshold
(V)
Temperature (
o
C)
V
IH
V
IL
V
DD
= 12 V
TC4451/TC4452
DS20001987C-page 8
2006-2014 Microchip Technology Inc.
Note: Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
18V.
FIGURE 2-13:
Input Threshold vs. Supply
Voltage.
FIGURE 2-14:
High State Output
Resistance vs. Supply Voltage.
FIGURE 2-15:
Low State Output
Resistance vs. Supply Voltage.
FIGURE 2-16:
Supply Current vs.
Capacitive Load (V
DD
= 18V).
FIGURE 2-17:
Supply Current vs.
Capacitive Load (V
DD
= 12V).
FIGURE 2-18:
Supply Current vs.
Capacitive Load (V
DD
= 6V).
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
4
6
8
10
12
14
16
18
Input Threshold
(V)
Supply Voltage (V)
V
IH
V
IL
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4
6
8
10
12
14
16
18
Supply Voltage (V)
R
OUT-HI
(
:
)
T
J
= +125
o
C
T
J
= +25
o
C
V
IN
= 5V (TC4452)
V
IN
= 0V (TC4451)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
4
6
8
10
12
14
16
18
Supply Voltage (V)
R
OUT-LO
(
:
)
T
J
= +125
o
C
T
J
= +25
o
C
V
IN
= 0V (TC4452)
V
IN
= 5V (TC4451)
0
50
100
150
200
250
300
100 1,000
10,000
100,000
Supply
Current
(mA)
Capacitive Load (pF)
V
DD
= 18 V
2 MHz
1 MHz
200 kHz
100 kHz
50 kHz
10 kHz
0
50
100
150
200
250
300
100
1,000
10,000
100,000
Supply
Current
(mA)
Capacitive Load (pF)
V
DD
= 12 V
2 MHz
1 MHz
200 kHz
100 kHz
50 kHz
10 kHz
-5
15
35
55
75
95
115
135
155
175
100
1,000
10,000
100,000
Supply
Current
(mA)
Capacitive Load (pF)
V
DD
= 6 V
2 MHz
1 MHz
200 kHz
100 kHz
50 kHz
10 kHz
2006-2014 Microchip Technology Inc.
DS20001987C-page 9
TC4451/TC4452
Note: Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
18V.
FIGURE 2-19:
Supply Current vs.
Frequency (V
DD
= 18V).
FIGURE 2-20:
Supply Current vs.
Frequency (V
DD
= 12V).
FIGURE 2-21:
Supply Current vs.
Frequency (V
DD
= 6V).
0
50
100
150
200
250
10
100
1000
10000
Supply
Current
(mA)
Frequency (kHz)
V
DD
= 18 V
0.1 µF
47,000 pF
22,000 pF
15,000 pF
10,000 pF
1,000 pF
470 pF
0
50
100
150
200
250
10
100
1000
10000
Supply
Current
(mA)
Frequency (kHz)
V
DD
= 12 V
0.1 µF
47,000 pF
22,000 pF
15,000 pF
10,000 pF
1,000 pF
470 pF
0
50
100
150
200
250
10
100
1000
10000
Supply
Current
(mA)
Frequency (kHz)
V
DD
= 6 V
0.1 µF
47,000 pF
22,000 pF
15,000 pF
10,000 pF
1,000 pF
470 pF
TC4451/TC4452
DS20001987C-page 10
2006-2014 Microchip Technology Inc.
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in
Table 3-1
.
3.1
Supply Input (V
DD
)
The V
DD
input is the bias supply for the MOSFET driver
and is rated for 4.5V to 18V with respect to the ground
pin. The V
DD
input should be bypassed to ground with
a local ceramic capacitor. The value of the capacitor
should be chosen based on the capacitive load that is
being driven. A minimum value of 1.0 µF is suggested.
3.2
Control Input (INPUT)
The MOSFET driver input is a high-impedance,
TTL/CMOS-compatible input. The input also has
300 mV of hysteresis between the high and low
thresholds that prevents output glitching even when the
rise and fall time of the input signal is very slow.
3.3
CMOS Push-Pull Output (OUTPUT,
OUTPUT)
The MOSFET driver output is a low-impedance,
CMOS, push-pull style output capable of driving a
capacitive load with 12A peak currents. The MOSFET
driver output is capable of withstanding 1.5A peak
reverse currents of either polarity.
3.4
Ground (GND)
The ground pins are the return path for the bias current
and for the high peak currents that discharge the load
capacitor. The ground pins should be tied into a ground
plane or have very short traces to the bias supply
source return.
3.5
Exposed Thermal Pad (EP)
The exposed thermal pad of the 6x5 DFN-S package is
not internally connected to any potential. Therefore,
this pad can be connected to a ground plane or other
copper plane on a printed circuit board (PCB) to help
remove heat from the package.
3.6
Thermal Tab
The thermal tab of the TO-220 package is connected to
the V
DD
potential of the device and this connection is
used as a current-carrying path.
TABLE 3-1:
PIN FUNCTION TABLE
8-Pin PDIP,
SOIC
8-Pin DFN-S
5-Pin TO-220
Symbol
Description
1
1
—
V
DD
Supply input, 4.5V to 18V
2
2
1
INPUT
Control input, TTL/CMOS-compatible input
3
3
—
NC
No connection
4
4
2
GND
Ground
5
5
4
GND
Ground
6
6
5
OUTPUT/OUTPUT
CMOS push-pull output
7
7
—
OUTPUT/OUTPUT
CMOS push-pull output
8
8
3
V
DD
Supply input, 4.5V to 18V
—
9
—
EP
Exposed thermal pad
—
—
TAB
V
DD
Thermal tab is at the V
DD
potential