2006-2014 Microchip Technology Inc.
DS20001422G-page 1
TC4426/TC4427/TC4428
Features:
• High Peak Output Current: 1.5A
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability: 1000 pF in
25 ns (typical)
• Short Delay Times: 40 ns (typical)
• Matched Rise and Fall Times
• Low Supply Current:
- With Logic ‘1’ Input – 4 mA
- With Logic ‘0’ Input – 400 µA
• Low Output Impedance: 7
• Latch-Up Protected: Withstands 0.5A Reverse
Current
• Input Withstands Negative Inputs Up to 5V
• Electrostatic Discharge (ESD) Protected: 2.0 kV
• Space-saving 8-Pin MSOP and 8-Pin 6x5 DFN-S
Packages
Applications:
• Switch Mode Power Supplies
• Line Drivers
• Pulse Transformer Drive
General Description:
The TC4426/TC4427/TC4428 are improved versions
of the earlier TC426/TC427/TC428 family of MOSFET
drivers. The TC4426/TC4427/TC4428 devices have
matched rise and fall times when charging and
discharging the gate of a MOSFET.
These devices are highly latch-up resistant under any
conditions within their power and voltage ratings. They
are not subject to damage when up to 5V of noise
spiking (of either polarity) occurs on the ground pin.
They can accept, without damage or logic upset, up to
500 mA of reverse current (of either polarity) being
forced back into their outputs. All terminals are fully
protected against Electrostatic Discharge (ESD) up to
2.0 kV.
The TC4426/TC4427/TC4428 MOSFET drivers can
easily charge/discharge 1000 pF gate capacitances in
under 30 ns. These devices provide low enough
impedances in both the On and Off states to ensure the
MOSFET’s intended state is not affected, even by large
transients.
Other compatible drivers are the TC4426A/TC4427A/
TC4428A family of devices. The TC4426A/TC4427A/
TC4428A devices have matched leading and falling
edge input-to-output delay times, in addition to the
matched rise and fall times of the TC4426/TC4427/
TC4428 devices.
Package Types
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
V
DD
TC4426
TC4427
TC4426 TC4427
NC
OUT A
OUT B
V
DD
TC4428
NC
OUT A
OUT B
V
DD
TC4428
NC
OUT A
OUT B
V
DD
TC4426 TC4427
NC
OUT A
OUT B
V
DD
TC4428
NC
OUT A
OUT B
V
DD
8-Pin MSOP/
PDIP/SOIC
GND
IN A
IN B
1
2
3
4
8
7
6
5
NC
EP
9
8-Pin DFN-S*
* Includes Exposed Thermal Pad (EP); see
Table 3-1
.
1.5A Dual High-Speed Power MOSFET Drivers
TC4426/TC4427/TC4428
DS20001422G-page 2
2006-2014 Microchip Technology Inc.
Functional Block Diagram
Effective
Input C = 12 pF
(Each Input)
TC4426/TC4427/TC4428
Output
Input
GND
V
DD
300 mV
4.7V
Inverting
Non-Inverting
Note 1: TC4426 has two inverting drivers, while the TC4427 has two non-inverting
drivers. The TC4428 has one inverting and one non-inverting driver.
2: Ground any unused driver input.
1.5 mA
2006-2014 Microchip Technology Inc.
DS20001422G-page 3
TC4426/TC4427/TC4428
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage ................................................................+22V
Input Voltage, IN A or IN B .......... (V
DD
+ 0.3V) to (GND – 5V)
Package Power Dissipation (T
A
+70°C)
DFN-S .....................................................................
Note 3
MSOP .....................................................................340 mW
PDIP .......................................................................730 mW
SOIC.......................................................................470 mW
Storage Temperature Range .........................-65°C to +150°C
Maximum Junction Temperature ................................. +150°C
† Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, T
A
= +25ºC with 4.5V
V
DD
18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Input
Logic ‘1’, High Input Voltage
V
IH
2.4
—
—
V
Note 2
Logic ‘0’, Low Input Voltage
V
IL
—
—
0.8
V
Input Current
I
IN
-1.0
—
+1.0
µA
0V
V
IN
V
DD
Output
High Output Voltage
V
OH
V
DD
– 0.025
—
—
V
DC Test
Low Output Voltage
V
OL
—
—
0.025
V
DC Test
Output Resistance
R
O
—
7
10
I
OUT
= 10 mA, V
DD
= 18V
Peak Output Current
I
PK
—
1.5
—
A
V
DD
= 18V
Latch-Up Protection
Withstand Reverse Current
I
REV
—
> 0.5
—
A
Duty cycle
2%, t 300 µs
V
DD
= 18V
Switching Time (
Note 1
)
Rise Time
t
R
—
19
30
ns
Figure 4-1
Fall Time
t
F
—
19
30
ns
Figure 4-1
Delay Time
t
D1
—
20
30
ns
Figure 4-1
Delay Time
t
D2
—
40
50
ns
Figure 4-1
Power Supply
Power Supply Current
I
S
—
—
—
—
4.5
0.4
mA
V
IN
= 3V (Both inputs)
V
IN
= 0V (Both inputs)
Note 1:
Switching times ensured by design.
2:
For V temperature range devices, the V
IH
(Min) limit is 2.0V.
3:
Package power dissipation is dependent on the copper pad area on the PCB.
TC4426/TC4427/TC4428
DS20001422G-page 4
2006-2014 Microchip Technology Inc.
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V
V
DD
18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Input
Logic ‘1’, High Input Voltage
V
IH
2.4
—
—
V
Note 2
Logic ‘0’, Low Input Voltage
V
IL
—
—
0.8
V
Input Current
I
IN
-10
—
+10
µA
0V
V
IN
V
DD
Output
High Output Voltage
V
OH
V
DD
– 0.025
—
—
V
DC Test
Low Output Voltage
V
OL
—
—
0.025
V
DC Test
Output Resistance
R
O
—
9
12
I
OUT
= 10 mA, V
DD
= 18V
Peak Output Current
I
PK
—
1.5
—
A
V
DD
= 18V
Latch-Up Protection
Withstand Reverse Current
I
REV
—
>0.5
—
A
Duty cycle
2%, t 300 µs
V
DD
= 18V
Switching Time (
Note 1
)
Rise Time
t
R
—
—
40
ns
Figure 4-1
Fall Time
t
F
—
—
40
ns
Figure 4-1
Delay Time
t
D1
—
—
40
ns
Figure 4-1
Delay Time
t
D2
—
—
60
ns
Figure 4-1
Power Supply
Power Supply Current
I
S
—
—
—
—
8.0
0.6
mA
V
IN
= 3V (Both inputs)
V
IN
= 0V (Both inputs)
Note 1:
Switching times ensured by design.
2:
For V temperature range devices, the V
IH
(Min) limit is 2.0V.
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V
V
DD
18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Temperature Ranges
Specified Temperature Range (C)
T
A
0
—
+70
°C
Specified Temperature Range (E)
T
A
-40
—
+85
°C
Specified Temperature Range (V)
T
A
-40
—
+125
°C
Maximum Junction Temperature
T
J
—
—
+150
°C
Storage Temperature Range
T
A
-65
—
+150
°C
Package Thermal Resistances
Thermal Resistance, 8L-6x5 DFN-S
JA
—
33.2
—
°C/W
Thermal Resistance, 8L-MSOP
JA
—
206
—
°C/W
Thermal Resistance, 8L-PDIP
JA
—
125
—
°C/W
Thermal Resistance, 8L-SOIC
JA
—
155
—
°C/W
2006-2014 Microchip Technology Inc.
DS20001422G-page 5
TC4426/TC4427/TC4428
2.0
TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, T
A
= +25ºC with 4.5V
V
DD
18V.
FIGURE 2-1:
Rise Time vs. Supply
Voltage.
FIGURE 2-2:
Rise Time vs. Capacitive
Load.
FIGURE 2-3:
Rise and Fall Times vs.
Temperature.
FIGURE 2-4:
Fall Time vs. Supply
Voltage.
FIGURE 2-5:
Fall Time vs. Capacitive
Load.
FIGURE 2-6:
Propagation Delay Time vs.
Supply Voltage.
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
t RISE
(nsec)
4
6
8
10
12
14
16
18
100 pF
470 pF
2200 pF
1500 pF
100
1000 pF
80
60
40
20
0
VDD (V)
100
1000
10,000
C (pF)
LOAD
5V
10V
15V
100
80
60
40
20
0
t RISE
(nsec)
Time (nsec)
tRISE
Temperature (˚C)
C = 1000 pF
LOAD
V = 17.5V
DD
60
–55 –35
5
25
45
65
85
105 125
–15
tFALL
50
40
30
20
10
t FALL
(nsec)
4
6
8
10
12
14
16
18
100 pF
470 pF
1000 pF
2200 pF
1500 pF
100
80
60
40
20
0
VDD (V)
100
1000
10,000
5V
10V
C (pF)
LOAD
100
80
60
40
20
0
t FALL
(nsec)
15V
20
25
30
35
40
45
50
55
60
65
70
75
80
4
6
8
10
12
14
16
18
V
DD
(V)
P
ro
p
ag
atio
n D
e
la
y (n
sec)
t
D1
t
D2
C
LOAD
= 1000 pF
V
IN
= 5V
TC4426/TC4427/TC4428
DS20001422G-page 6
2006-2014 Microchip Technology Inc.
Note: Unless otherwise indicated, T
A
= +25ºC with 4.5V
V
DD
18V.
FIGURE 2-7:
Propagation Delay Time vs.
Input Amplitude.
FIGURE 2-8:
Supply Current vs. Supply
Voltage.
FIGURE 2-9:
Output Resistance (R
OH
) vs.
Supply Voltage.
FIGURE 2-10:
Propagation Delay Time vs.
Temperature.
FIGURE 2-11:
Supply Current vs.
Temperature.
FIGURE 2-12:
Output Resistance (R
OL
) vs.
Supply Voltage.
10
15
20
25
30
35
40
45
50
55
60
0
1
2
3
4
5
6
7
8
9
10
11
12
Input Amplitude (V)
P
ropa
gat
ion
D
e
lay
(ns
ec)
t
D1
t
D2
C
LOAD
= 1000 pF
V
DD
= 12V
4
I (mA) QUIESCENT
18
6
8
10
12
14
16
0.1
Both Inputs = 1
Both Inputs = 0
V
DD
1
4
6
8
10
12
14
16
18
V
DD
R
DS(ON)
(Ω
)
20
25
15
10
5
Worst Case @ T
J
= +150˚C
Typical @ T
A
= +25˚C
10
15
20
25
30
35
40
45
-55
-35
-15
5
25
45
65
85
105 125
Temperature (ºC)
D
e
lay Tim
e
(nsec)
t
D1
t
D2
C
LOAD
= 1000 pF
V
IN
= 5V
V
DD
= 18V
T
A
(˚C)
I
QUIESCENT
(mA)
4.0
3.5
3.0
2.5
2.0
–55 –35 –15
5
25
45
65
85
105 125
V = 18V
DD
Both Inputs = 1
4
6
8
10
12
14
16
18
20
V
DD
25
15
10
5
Worst Case @ T
J
= +150˚C
Typical @ TA = +25˚C
R
DS(ON)
(
Ω
)
2006-2014 Microchip Technology Inc.
DS20001422G-page 7
TC4426/TC4427/TC4428
Note: Unless otherwise indicated, T
A
= +25ºC with 4.5V
V
DD
18V.
FIGURE 2-13:
Supply Current vs.
Capacitive Load.
FIGURE 2-14:
Supply Current vs.
Capacitive Load.
FIGURE 2-15:
Supply Current vs.
Capacitive Load.
FIGURE 2-16:
Supply Current vs.
Frequency.
FIGURE 2-17:
Supply Current vs.
Frequency.
FIGURE 2-18:
Supply Current vs.
Frequency.
60
100
1000
10,000
I SUPPLY
(mA)
2 MHz
600 kHz
200 kHz
20 kHz
900 kHz
C (pF)
LOAD
V = 18V
DD
50
40
30
20
10
0
100
1000
10,000
2 MHz
600 kHz
200 kHz
20 kHz
900 kHz
V = 12V
DD
C (pF)
LOAD
60
50
40
30
20
10
0
I SUPPLY
(mA)
100
1000
10,000
2 MHz
200 kHz
20 kHz
600 kHz
900 kHz
V = 6V
DD
C (pF)
LOAD
60
50
40
30
20
10
0
I SUPPLY
(mA)
10
100
1000
FREQUENCY (kHz)
1000 pF
2200 pF
V = 18V
DD
100 pF
60
50
40
30
20
10
0
I SUPPLY
(mA)
10
100
1000
FREQUENCY (kHz)
1000 pF
2200 pF
100 pF
V = 12V
DD
60
50
40
30
20
10
0
I SUPPLY
(mA)
10
100
1000
FREQUENCY (kHz)
1000 pF
2200 pF
100 pF
V = 6V
DD
60
50
40
30
20
10
0
I SUPPLY
(mA)
TC4426/TC4427/TC4428
DS20001422G-page 8
2006-2014 Microchip Technology Inc.
Note: Unless otherwise indicated, T
A
= +25ºC with 4.5V
V
DD
18V.
FIGURE 2-19:
Crossover Energy vs.
Supply Voltage.
4
A • sec
18
6
8
10
12
14
16
8
7
6
5
4
3
2
10
–9
10
–8
9
V
DD
Note:
The values on this graph represent the loss
seen by both drivers in a package during one
complete cycle. For a single driver, divide the
stated values by 2. For a single transition of a
single driver, divide the stated value by 4.
2006-2014 Microchip Technology Inc.
DS20001422G-page 9
TC4426/TC4427/TC4428
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in
Table 3-1
.
TABLE 3-1:
PIN FUNCTION TABLE
(
1
)
3.1
Inputs A and B
MOSFET driver inputs A and B are high-impedance,
TTL/CMOS compatible inputs. These inputs also have
300 mV of hysteresis between the high and low
thresholds that prevents output glitching even when the
rise and fall time of the input signal is very slow.
3.2
Ground (GND)
Ground is the device return pin. The Ground pin(s)
should have a low-impedance connection to the bias
supply source return. High peak current flows out the
Ground pin(s) when the capacitive load is being
discharged.
3.3
Output A and B
MOSFET driver outputs A and B are low-impedance,
CMOS push-pull style outputs. The pull-down and pull-
up devices are of equal strength, making the rise and
fall times equivalent.
3.4
Supply Input (V
DD
)
The V
DD
input is the bias supply for the MOSFET driver
and is rated for 4.5V to 18V with respect to the Ground
pin. The V
DD
input should be bypassed with local
ceramic capacitors. The value of these capacitors
should be chosen based on the capacitive load that is
being driven. A value of 1.0 µF is suggested.
3.5
Exposed Metal Pad
The exposed metal pad of the 6x5 DFN-S package is
not internally connected to any potential. Therefore,
this pad can be connected to a ground plane or other
copper plane on a Printed Circuit Board (PCB), to aid
in heat removal from the package.
8-Pin PDIP/
MSOP/SOIC
8-Pin
DFN-S
Symbol
Description
1
1
NC
No connection
2
2
IN A
Input A
3
3
GND
Ground
4
4
IN B
Input B
5
5
OUT B
Output B
6
6
V
DD
Supply input
7
7
OUT A
Output A
8
8
NC
No connection
—
PAD
NC
Exposed Metal Pad
Note 1:
Duplicate pins must be connected for proper operation.
TC4426/TC4427/TC4428
DS20001422G-page 10
2006-2014 Microchip Technology Inc.
4.0
APPLICATIONS INFORMATION
FIGURE 4-1:
Switching Time Test Circuit.
C
L
= 1000 pF
0.1 µF
4.7 µF
Inverting Driver
Non-Inverting Driver
Input
V
DD
= 18V
Input
Output
t
D1
t
F
t
R
t
D2
Input: 100 kHz,
square wave,
t
RISE
= t
FALL
10 ns
Output
Input
Output
t
D1
t
F
t
R
t
D2
+5V
10%
90%
10%
90%
10%
90%
V
DD
0V
90%
10%
10%
10%
90%
+5V
V
DD
0V
0V
0V
90%
3
2
7
6
4
5