TC2320 N-Channel and P-Channel Enhancement-Mode Dual MOSFET Data Sheet

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 2017 Microchip Technology Inc.

DS20005708A-page  1

TC2320

Features

• Low Threshold
• Low On-resistance
• Low Input Capacitance
• Fast Switching Speeds
• Free from Secondary Breakdown
• Low Input and Output Leakage
• Independent, Electrically Isolated N-channel and 

P-channel

Applications

• Medical Ultrasound Transmitters
• High-voltage Pulsers
• Amplifiers
• Buffers
• Piezoelectric Transducer Drivers
• General Purpose Line Drivers
• Logic-level Interface

General Description

The TC2320 consists of a high-voltage, low-threshold 
N-channel and P-channel MOSFET in an 8-Lead SOIC 
package. This Enhancement-mode (normally-off) 
transistor uses an advanced vertical DMOS structure 
and a well-proven silicon gate manufacturing process. 
This combination produces a device with the power 
handling capabilities of bipolar transistors and high 
input impedance and positive temperature coefficient 
inherent in MOS devices. Characteristic of all MOS 
structures, this device is free from thermal runaway and 
thermally induced secondary breakdown.
Microchip’s vertical DMOS FETs are ideally suited to a 
wide range of switching and amplifying applications 
where very low threshold voltage, high breakdown 
voltage, high input impedance, low input capacitance 
and fast switching speeds are desired.

Package Type

8-lead SOIC

See 

Table 2-1

 for pin information.

(Top view)

 DP

  DP      

      DN            

DN                  

                  GP

            SP

      GN

SN

N-Channel and P-Channel Enhancement-Mode Dual MOSFET

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TC2320

DS20005708A-page  2

 2017 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings†

Drain-to-source Voltage........................................................................................................................................ BV

DSS

Drain-to-gate Voltage ........................................................................................................................................... BV

DGS

Gate-to-source Voltage ..........................................................................................................................................  ±20V
Operating Ambient Temperature, T

................................................................................................... –55°C to +150°C

Storage Temperature, T

..................................................................................................................... –55°C to +150°C

 Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the 
device. This is a stress rating only, and functional operation of the device at those or any other conditions above those 
indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for 
extended periods may affect device reliability. 

N-CHANNEL DC AND AC ELECTRICAL CHARACTERISTICS 

Electrical Specifications: Unless otherwise noted, T

A

 = T

J

 = +25°C.

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

DC PARAMETER (

Note 1

)

Drain-to-source Breakdown Voltage

BV

DSS

200

V

V

GS 

= 0V, I

D

 = 100 µA

Gate Threshold Voltage

V

GS(th)

0.6

2

V

V

GS

 = V

DS

, I

D

 = 1 mA

Change in V

GS(th)

 with Temperature

∆V

GS(th)

–4.5

mV/°C V

GS

 = V

DS

, I

D

 = 1 mA (

Note 2

)

Gate Body Leakage Current

I

GSS

100

nA

V

GS

 = ±20V, V

DS

 = 0V

Zero-gate Voltage Drain Current

I

DSS

1

µA

V

GS

 = 0V, V

DS

 = 100V

10

µA

V

GS

 = 0V, V

DS

 = Maximum rating

1

mA

V

GS

 = 0V, T

A

 = 125°C,                      

V

DS

 = 0.8 Maximum rating 

(

Note 2

)

On-state Drain Current

I

D(ON)

0.6

A

V

GS

 = 4.5V, V

DS

 = 25V

1.2

V

GS

 = 10V, V

DS

 = 25V

Static Drain-to-Source On-state 

Resistance

R

DS(ON)

8

V

GS

 = 4.5V, I

D

 = 150 mA

7

V

GS

 = 10V, I

D

 = 1A

Change in R

DS(ON)

 with                      

Temperature

∆R

DS(ON)

1

%/°C

V

GS

 = 4.5V, I

D

 = 150 mA (

Note 2

)

AC PARAMETER (

Note 2

)

Forward Transconductance

G

FS

150

mmho V

DS

 = 25V, I

D

 = 200 mA

Input Capacitance

C

ISS

110

pF

V

GS 

= 0V,

V

DS

 = 25V,

f = 1 MHz

Common Source Output Capacitance

C

OSS

60

Reverse Transfer Capacitance

C

RSS

23

Turn-on Delay Time

t

d(ON)

20

ns

V

DD

 = 25V,                                             

I

D

 = 150 mA,                                                   

R

GEN

 = 25Ω

Rise Time

t

r

15

Turn-off Delay Time

t

d(OFF)

25

Fall Time

t

f

25

DIODE PARAMETER 
Diode Forward Voltage Drop

V

SD

1.8

V

V

GS

 = 0V, I

SD

 = 200 mA (

Note 1

)

Reverse Recovery Time

t

rr

300

ns

V

GS

 = 0V, I

SD 

= 200 mA (

Note 2

)

Note 1: Unless otherwise stated, all DC parameters are 100% tested at +25°C.                                                       

Pulse test: 300 µs pulse, 2% duty cycle. 

2: Specification is obtained by characterization and is not 100% tested. 

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P-CHANNEL DC AND AC ELECTRICAL CHARACTERISTICS 

Electrical Specifications: Unless otherwise noted, T

A

 = T

J

 = +25°C.

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

DC PARAMETER (

Note 1

)

Drain-to-source Breakdown Voltage

BV

DSS

–200

V

V

GS

 = 0V, I

D

 = –2 mA

Gate Threshold Voltage

V

GS(th)

–1

–2.4

V

V

GS

 = V

DS

, I

D

 = –1 mA

Change in V

GS(th)

 with Temperature

∆V

GS(th)

4.5

mV/°C V

GS

 = V

DS

, I

D

 = –1 mA (

Note 2

)

Gate Body Leakage

I

GSS

–100

nA

V

GS

 = ±20V, V

DS

 = 0V

Zero-gate Voltage Drain Current

I

DSS

–10

µA

V

GS

 = 0V,                                    

V

DS

 = Maximum rating

–1

mA

V

GS

 = 0V, T

A

 = 125°C, 

V

DS

 = 0.8 Maximum rating 

(

Note 2

)

On-state Drain Current

I

D(ON)

–0.25 –0.7

A

V

GS

 = –4.5V, V

DS

 = –25V

–0.75 –2.1

V

GS

 = –10V, V

DS

 = –5V

Static Drain-to-Source On-state 
Resistance

R

DS(ON)

10

15

V

GS

 = –4.5V, I

D

 = –100 mA

8

12

V

GS

 = –10V, I

D

 = –200 mA

Change in R

DS(ON)

 with                   

Temperature

RDS(ON)

1.7

%/°C

V

GS

 = –10V, I

D

 = –200 mA 

(

Note 2

)

AC PARAMETER (

Note 2

)

Forward Transconductance

G

FS

100

250

mmho V

DS

 = –25V, I

D

 = –200 mA

Input Capacitance

C

ISS

75

125

pF

V

GS

 = 0V, 

V

DS

 = –25V, 

f = 1 MHz

Common Source Output Capacitance

C

OSS

20

85

Reverse Transfer Capacitance

C

RSS

10

35

Turn-on Delay Time

t

d(ON)

10

ns

V

DD

 = –25V,

 I

D

 = –0.75A,                                           

R

GEN

 = 25Ω

Rise Time

t

r

15

Turn-on Delay Time

t

d(OFF)

20

Fall Time

t

f

15

DIODE PARAMETER
Diode Forward Voltage Drop

V

SD

–1.8

V

V

GS

 = 0V, I

SD

 = –0.5A (

Note 1

)

Reverse Recovery Time

t

rr

300

ns

V

GS

 = 0V, I

SD

 = –0.5A (

Note 2

)

Note 1: Unless otherwise stated, all DC parameters are 100% tested at +25°C. Pulse test: 300 µs pulse, 2% duty 

cycle. 

2: Specification is obtained by characterization and is not 100% tested. 

TEMPERATURE SPECIFICATIONS

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

TEMPERATURE RANGE
Operating Ambient Temperature

T

A

–55

+150

°C

Storage Temperature 

T

S

–55

+150

°C

PACKAGE THERMAL RESISTANCE
8-lead SOIC

JA

101

°C/W

Note 1

 2017 Microchip Technology Inc.

DS20005708A-page  3

TC2320

Note 1: 1 oz., four-layer, 3” x 4” PCB

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TC2320

DS20005708A-page  4

 2017 Microchip Technology Inc.

2.0

PIN DESCRIPTION

Table 2-1

 shows the description of pins in TC2320. 

Refer to 

Package Type

 for the location of pins. 

TABLE 2-1:

PIN FUNCTION TABLE 

Pin Number

Pin Name

Description

1

SN

Source N-channel

2

GN

Gate N-channel

3

SP

Source P-channel

4

GP

Gate P-channel

5

DP

Drain P-channel

6

DP

Drain P-channel

7

DN

Drain N-channel

8

DN

Drain N-channel

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 2017 Microchip Technology Inc.

DS20005708A-page  5

TC2320

3.0

FUNCTIONAL DESCRIPTION

Figure 3-1

 and 

Figure 3-2

 illustrate the switching 

waveforms and test circuits for TC2320. 

VDD

R

L

OUTPUT

D.U.T.

10V

INPUT

0V

VDD

OUTPUT

0V

10%

90%

90%

10%

90%

10%

R

GEN

Input

Pulse

Generator

t

r

t

f

t

d(ON)

t

(ON)

t

d(OFF)

t

(OFF)

FIGURE 3-1:

N-channel Switching Waveforms and Test Circuit.

VDD

R

L

OUTPUT

D.U.T.

R

GEN

Input

Pulse

Generator

0V

INPUT

-10V

0V

OUTPUT

VDD

t

r

t

f

t

d(ON)

t

(ON)

90%

10%

90%

10%

10%

90%

t

d(OFF)

t

(OFF)

FIGURE 3-2:

P-channel Switching Waveforms and Test Circuit.

 

TABLE 3-1:

PRODUCT SUMMARY

BV

DSS

/BV

DGS

(V)

R

DS(ON)

(Maximum) 

(Ω)

N-Channel

P-Channel

N-Channel

P-Channel

200

–200

7

12

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TC2320

DS20005708A-page  6

 2017 Microchip Technology Inc.

4.0

PACKAGING INFORMATION

4.1

Package Marking Information

Legend: XX...X

Product Code or Customer-specific information

Y

Year code (last digit of calendar year)

YY

Year code (last 2 digits of calendar year)

WW

Week code (week of January 1 is week ‘01’)

NNN

Alphanumeric traceability code

  

Pb-free JEDEC

®

 designator for Matte Tin (Sn)

*

This package is Pb-free. The Pb-free JEDEC designator (     )

can be found on the outer packaging for this package.

Note:

In the event the full Microchip part number cannot be marked on one line, it will 
be carried over to the next line, thus limiting the number of available 
characters for product code or customer-specific information. Package may or 
not include the corporate logo.

3

e

3

e

8-lead SOIC

Example

NNN

XXXXXXXX

YYWW

e3

896

TC2320TG

1737

e3

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Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.

 2017 Microchip Technology Inc.

DS20005708A-page  7

TC2320

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TC2320

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 2017 Microchip Technology Inc.

NOTES:

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 2017 Microchip Technology Inc.

DS20005708A-page  9

TC2320

APPENDIX A: REVISION HISTORY

Revision A (June 2017)

• Converted Supertex Doc# DSFP-TC2320 to 

Microchip DS20005708A

• Changed packaging format
• Changed the packaging quantity of the 8-lead 

SOIC TG package from 2000/Reel to 3300/Reel

• Made minor text changes throughout the                 

document

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TC2320

DS20005708A-page  10

 2017 Microchip Technology Inc.

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office

.

Example:

a) TC2320TG-G

:      

N-Channel and P-Channel                         

Enhancement-Mode Dual MOSFET,

                 

8-lead SOIC, 3300/Reel 

PART NO.

Device

Device:

TC2320

=

N-Channel and P-Channel                   
Enhancement-Mode Dual MOSFET

Package:

TG

=

8-lead SOIC

Environmental:

G

=

Lead (Pb)-free/RoHS-compliant Package

Media Type: 

(blank)

=

3300/Reel for a TG Package

      XX

          Package

-           

X            -                  X

               Environmental    Media Type

          Options

Maker
Microchip Technology Inc.