TC1412/TC1412N Data Sheet

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 2001-2015 Microchip Technology Inc.

DS20001391E-page 1

TC1412/TC1412N

Features

• Latch-Up Protected: Withstands 500 mA Reverse 

Current

• Input Withstands Negative Inputs Up to 5V
• Electrostatic Discharge (ESD) Protected: 2.0 kV 

(HBM) and 400V (MM)

• High Peak Output Current: 2A
• Wide Input Supply Voltage Operating Range:

- 4.5V to 16V

• High Capacitive Load Drive Capability:

- 1000 pF in 18 ns

• Short Delay Time: 35 ns typical
• Matched Delay Times
• Low Supply Current:

-  With Logic ‘1’ Input: 500 µA
-  With Logic ‘0’ Input: 100 µA

• Low Output Impedance: 4

• Available in Space-Saving 8-pin MSOP Package
• Pinout – same as TC1410/TC1411/TC1413

Applications

• Switch Mode Power Supplies
• Pulse Transformer Drive
• Line Drivers
• Relay Driver

General Description

The TC1412/TC1412N are 2A CMOS buffers/drivers.
They do not latch up under any conditions within their
power and voltage ratings. They are not subject to
damage when up to 5V of noise spiking of either
polarity occurs on the ground pin. They can accept,
without damage or logic upset, up to 500 mA of current
of either polarity being forced back into their output. All
terminals are fully protected against electrostatic
discharge (ESD) up to 2.0 kV (HBM) and 400V (MM).
As MOSFET drivers, the TC1412/TC1412N can easily
charge a 1000 pF gate capacitance in 18 ns with
matched rise and fall times. To ensure that the
MOSFET’s intended state will not be affected even by
large transients, low enough impedance in both the ‘On’
and ‘Off’ states are provided. The leading and trailing
edge propagation delay times are also matched to allow
driving short-duration inputs with greater accuracy.

Package Type

2

6,7

Inverting

8-Pin MSOP/PDIP/SOIC

1
2
3
4

V

DD

5

6

7

8

OUT

GND

V

DD

IN

NC

GND

OUT

TC1412

NC = No Internal Connection

2

6,7

Non-Inverting

1
2
3
4

5

6

7

8

TC1412N

V

DD

IN

NC

GND

V

DD

OUT

GND

OUT

Note:

For proper operation, duplicate pins 
must be connected together.

2A High-Speed MOSFET Drivers

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TC1412/TC1412N

DS20001391E-page 2

 2001-2015 Microchip Technology Inc.

Functional Block Diagram

Effective 

Input C = 10 pF 

Output

Input

GND

V

DD

300 mV 
 

4.7V

Inverting

Non-Inverting

Outputs

Outputs

TC1412

TC1412N

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 2001-2015 Microchip Technology Inc.

DS20001391E-page 3

TC1412/TC1412N

1.0

ELECTRICAL 
CHARACTERISTICS

Absolute Maximum Ratings †

Supply Voltage .....................................................+20V
Input Voltage ...................... V

DD

+ 0.3V to GND – 5.0V

Power Dissipation (T

A

 70°C)

MSOP .......................................................... 340 mW
PDIP ............................................................ 730 mW
SOIC............................................................ 470 mW

Storage Temperature Range.............. -65°C to +150°C
Maximum Junction Temperature...................... +150ºC

† Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.

DC CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, T

A

= +25°C, with 4.5V

 V

DD

 16V.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Input
Logic ‘1’, High Input Voltage

V

IH

2.0

V

Logic ‘0’, Low Input Voltage

V

IL

0.8

V

Input Current

I

IN

-1.0

1.0

µA

0V

 V

IN

 V

DD, 

T

A

= +25°C

-10

10

-40°C

 T

A

 +85°C

Output
High Output Voltage

V

OH

V

DD

– 0.025

V

DC Test

Low Output Voltage

V

OL

0.025

V

DC Test

Output Resistance

R

O

4

6

V

DD

= 16V,  I

O

= 10 mA, 

T

A

= +25°C

5

7

0°C

 T

A

 +70°C

5

7

-40°C

 T

A

 +85°C

Peak Output Current

I

PK

2.0

A

V

DD

= 16V

Latch-Up Protection 
Withstand Reverse Current

I

REV

0.5

A

Duty cycle

 2%, t  300 µs,

V

DD

= 16V

Switching Time (

Note 1

)

Rise Time

t

R

18

26

ns

T

A

= +25°C

20

31

0°C

 T

A

 +70°C

22

31

-40°C

 T

A

 +85°C, 

Figure 4-1

Fall Time

t

F

18

26

ns

T

A

= +25°C

20

31

0°C

 T

A

 +70°C

22

31

-40°C

 T

A

 +85°C, 

Figure 4-1

Delay Time

t

D1

35

45

ns

T

A

= +25°C

40

50

0°C

 T

A

 +70°C

40

50

-40°C

 T

A

 +85°C, 

Figure 4-1

Delay Time

t

D2

35

45

ns

T

A

= +25°C

40

50

0°C

 T

A

 +70°C

40

50

-40°C

 T

A

 +85°C, 

Figure 4-1

Note 1:Switching times ensured by design.

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TC1412/TC1412N

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 2001-2015 Microchip Technology Inc.

Power Supply
Power Supply Current

I

S

0.5

1.0

mA

V

IN

= 3V,  V

DD

= 16V

0.1

0.15

V

IN

= 0V

TEMPERATURE CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V

 V

DD

 18V.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Temperature Ranges
Specified Temperature Range (C)

T

A

0

+70

ºC

Specified Temperature Range (E)

T

A

-40

+85

ºC

Maximum Junction Temperature

T

J

+150

ºC

Storage Temperature Range

T

A

-65

+150

ºC

Package Thermal Resistances
Thermal Resistance, 8L-MSOP

JA

211

ºC/W

Thermal Resistance, 8L-PDIP

JA

89.3

ºC/W

Thermal Resistance, 8L-SOIC

JA

149.5

ºC/W

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise noted, T

A

= +25°C, with 4.5V

 V

DD

 16V.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Note 1:Switching times ensured by design.

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DS20001391E-page 5

TC1412/TC1412N

2.0

TYPICAL PERFORMANCE CURVES

Note: Unless otherwise indicated, over operating temperature range with 4.5V

 V

DD

 16V.

FIGURE 2-1:

Quiescent Supply Current 

vs. Supply Voltage.

FIGURE 2-2:

Input Threshold vs. Supply 

Voltage.

FIGURE 2-3:

High State Output 

Resistance vs. Supply Voltage.

FIGURE 2-4:

Quiescent Supply Current 

vs. Temperature.

FIGURE 2-5:

Input Threshold vs. 

Temperature.

FIGURE 2-6:

Low State Output 

Resistance vs. Supply Voltage.

Note:

The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

0

100

200

300

400

500

16

14

12

10

8

6

4

V

IN

 = 3V

V

IN

 = 0V

T

A

 = +25

°C

I

SUPPLY

 (

µ

A)

V

DD

 (V)

V

DD

 (V)

V

THRESHOLD

 (V)

1.1

1.2

1.3

1.4

1.5

1.6

16

14

12

10

8

6

4

V

IH

V

IL

T

A

 = +25

°C

V

DD

 (V)

1

3

5

7

9

11

13

16

14

12

10

8

6

4

T

A

 = -40

°C

T

A

 = +25

°C

T

A

 = +85

°C

R

DS-ON

 (Ohms)

-40

-20

0

20

40

60

80

0

100

200

300

400

500

I

SUPPLY

 (

µ

A)

V

IN

 = 3V

V

IN

 = 0V

V

SUPPLY

 = 16V

TEMPERATURE (

°C)

-40

-20

0

20

40

60

80

1.1

1.2

1.3

1.4

1.5

1.6

V

SUPPLY

 = 16V

TEMPERATURE (

°C)

V

THRESHOLD

 (V)

V

IH

V

IL

V

DD

 (V)

1

3

5

7

9

11

13

16

14

12

10

8

6

4

T

A

 = -40

°C

T

A

 = +25

°C

T

A

 = +85

°C

R

DS-ON

 (Ohms)

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TC1412/TC1412N

DS20001391E-page 6

 2001-2015 Microchip Technology Inc.

Note: Unless otherwise indicated, over operating temperature range with 4.5V

 V

DD

 16V.

FIGURE 2-7:

Rise Time vs. Supply 

Voltage.

FIGURE 2-8:

Propagation Delay vs. 

Supply Voltage.

FIGURE 2-9:

Rise and Fall Times vs. 

Capacitive Load.

FIGURE 2-10:

Fall Time vs. Supply 

Voltage.

FIGURE 2-11:

Propagation Delay vs. 

Supply Voltage.

FIGURE 2-12:

Propagation Delays vs. 

Capacitive Load.

V

DD

 (V)

t

RISE 

(nsec)

10

20

30

40

50

60

70

16

14

12

10

8

6

4

T

A

 = -40

°C

T

A

 = +25

°C

T

A

 = +85

°C

C

LOAD

 = 1000 pF

V

DD

 (V)

t

D1 

(nsec)

20

30

40

50

60

70

80

90

100

16

14

12

10

8

6

4

T

A

 = -40

°C

T

A

 = +25

°C

T

A

 = +85

°C

C

LOAD

 = 1000 pF

t

RISE

, t

FALL

 (nsec)

C

LOAD

 (pF)

0

1000

2000

3000

4000

5000

0

10

20

30

40

50

60

t

FALL

t

RISE

T

A

 = +25

°C

V

DD

 = 16V

t

FALL 

(nsec)

10

20

30

40

50

60

70

16

14

12

10

8

6

4

T

A

 = +85

°C

T

A

 = -40

°C

T

A

 = +25

°C

C

LOAD

 = 1000 pF

V

DD

 (V)

V

DD

 (V)

20

30

40

50

60

70

80

90

100

16

14

12

10

8

6

4

C

LOAD

 = 1000 pF

T

A

 = -40

°C

T

A

 = +25

°C

T

A

 = +85

°C

t

D2 

(nsec)

C

LOAD

 (pF)

Propagation Delays (nsec)

0

1000

2000

3000

4000

5000

32

33

34

35

36

37

38

39

t

D2

t

D1

T

A

 = +25

°C

V

DD

 = 16V

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DS20001391E-page 7

TC1412/TC1412N

3.0

PIN DESCRIPTIONS

The descriptions of the pins are listed in 

Table 3-1

.

3.1

Supply Input (V

DD

)

The V

DD

 input is the bias supply for the MOSFET driver

and is rated for 4.5V to 16V with respect to the ground
pin. The V

DD

 input should be bypassed to ground with

a local ceramic capacitor. The value of the capacitor is
chosen based on the capacitive load that is being
driven. A value of 1.0 µF is suggested.

3.2

Control Input (IN)

The MOSFET driver input is a high-impedance,
TTL/CMOS-compatible input. The input has 300 mV of
hysteresis between the high and low thresholds which
prevents output glitching even when the rise and fall
time of the input signal is very slow.

3.3

CMOS Push-Pull Output
(OUT, OUT)

The MOSFET driver output is a low-impedance, CMOS
push-pull style output, capable of driving a capacitive
load with 2A peak currents.

3.4

Ground (GND)

The ground pins are the return path for the bias current
and for the high peak currents that discharge the load
capacitor. The ground pins should be tied into a ground
plane or have very short traces to the bias supply
source return.

3.5

No Connect (NC)

No internal connection.

TABLE 3-1:

PIN FUNCTION TABLE

Pin 

No.

TC1412

MSOP, PDIP, SOIC

TC1412N

MSOP, PDIP, SOIC

Description

1

V

DD

V

DD

Supply input, 4.5V to 16V

2

IN

IN

Control input

3

NC

NC

No connection

4

GND

GND

Ground

5

GND

GND

Ground

6

OUT

OUT

CMOS push-pull output, common to pin 7

7

OUT

OUT

CMOS push-pull output, common to pin 6

8

V

DD

V

DD

Supply input, 4.5V to 16V

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TC1412/TC1412N

DS20001391E-page 8

 2001-2015 Microchip Technology Inc.

4.0

APPLICATION INFORMATION

FIGURE 4-1:

Switching Time Test Circuit.

C

L

 = 1000 pF

0.1 µF

1.0 µF

Inverting Driver

Non-Inverting Driver

Input

V

DD

 = 16V

Input

Output

t

D1

t

F

t

R

t

D2

Input: 100 kHz,

square wave,

t

RISE

 = t

FALL

 

 10 ns

Output

Input

Output

t

D1

t

F

t

R

t

D2

+5V

10%

90%

10%

90%

10%

90%

V

DD

0V

90%

10%

10%

10%

90%

+5V

V

DD

0V

0V

0V

90%

4, 5

2

6, 7

1, 8

TC1412

TC1412N

TC1412

TC1412N

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TC1412/TC1412N

5.0

PACKAGING INFORMATION

5.1

Package Marking Information

8-Lead PDIP (300 mil)

Example

XXXXXXXX

XXXXXNNN

YYWW

TC1412

CPA256

1317

OR

TC1412

CPA^^ 256

1317

3

e

Legend: XX...X

Customer-specific information

Y

Year code (last digit of calendar year)

YY

Year code (last 2 digits of calendar year)

WW

Week code (week of January 1 is week ‘01’)

NNN

Alphanumeric traceability code

  

RoHS Compliant JEDEC

®

 designator for Matte Tin (Sn)

*

This package is RoHS Compliant. The RoHS Compliant JEDEC designator (     )
can be found on the outer packaging for this package.

Note:

In the event the full Microchip part number cannot be marked on one line, it will be carried over
to the next line, thus limiting the number of available characters for customer-specific
information.

3

e

3

e

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TC1412/TC1412N

DS20001391E-page 10

 2001-2015 Microchip Technology Inc.

8-Lead SOIC (3.90 mm)

Example

NNN

TC1412

COA1317

256

TC1412C

OA^^ 1317

256

3

e

OR

8-Lead MSOP (3x3 mm)

Example

1412E

317256

Maker
Microchip Technology Inc.
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