TC1411/TC1411N Data Sheet

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 2001-2015 Microchip Technology Inc.

DS20001390F-page 1

TC1411/TC1411N

Features

• Latch-Up Protected: Will Withstand 500 mA 

Reverse Current

• Input Will Withstand Negative Inputs Up to 5V

• Electrostatic Discharge (ESD) Protected: 2.0 kV 

(HBM) and 400V (MM)

• High-Peak Output Current: 1A

• Wide Input Supply Voltage Operating Range:

- 4.5V to 16V

• High Capacitive Load Drive Capability:

- 1000 pF in 25 ns

• Short Delay Time: 30 ns typical

• Matched Delay Times

• Low Supply Current

-  With Logic ‘1’ Input: 500 µA

-  With Logic ‘0’ Input: 100 µA

• Low Output Impedance: 8

• Available in Space-Saving 8-pin MSOP Package

• Pinout – same as TC1410/TC1412/TC1413

Applications

• Switch Mode Power Supplies

• Pulse Transformer Drive

• Line Drivers

• Relay Driver

General Description

The TC1411/TC1411N are 1A CMOS buffers/drivers.
They will not latch up under any conditions within their
power and voltage ratings. They are not subject to
damage when up to 5V of noise spiking of either
polarity occurs on the ground pin. They can accept,
without damage or logic upset, up to 500 mA of current
of either polarity being forced back into their output. All
terminals are fully protected against Electrostatic
Discharge (ESD) up to 2.0 kV (HBM) and 400V (MM).

As MOSFET drivers, the TC1411/TC1411N can easily
charge a 1000 pF gate capacitance in 25 ns with
matched rise and fall times and provide low enough
impedance in both the ‘ON’ and ‘OFF’ states to ensure
the MOSFET’s intended state will not be affected, even
by large transients. The leading and trailing edge
propagation delay times are also matched to allow
driving short-duration inputs with greater accuracy.

Package Types

V

DD

IN

NC

GND

V

DD

OUT

GND

OUT

1

2

3

4

5

6

7

8

8-Pin MSOP/PDIP/SOIC

V

DD

OUT

GND

V

DD

IN

NC

GND

OUT

TC1411

NC = No Internal Connection

2

6,7

Inverting

2

6,7

Non-inverting

1

2

3

4

5

6

7

8

TC1411N

Note:

Duplicate pins must be connected 
together for proper operation.

1A High-Speed MOSFET Drivers

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TC1411/TC1411N

DS20001390F-page 2

 2001-2015 Microchip Technology Inc.

Functional Block Diagram

Effective 

Input C = 10 pF 

Output

Input

GND

V

DD

300 mV 
 

4.7V

Inverting

Non-inverting

Outputs

Outputs

TC1411

TC1411N

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 2001-2015 Microchip Technology Inc.

DS20001390F-page 3

TC1411/TC1411N

1.0

ELECTRICAL 
CHARACTERISTICS

Absolute Maximum Ratings †

Supply Voltage ..................................................... +20V

Input Voltage ...................... V

DD

+ 0.3V to GND – 5.0V

Power Dissipation (T

A

 70°C)

MSOP .......................................................... 340 mW
PDIP ............................................................ 730 mW
SOIC............................................................ 470 mW

Storage Temperature Range .............. -65°C to +150°C

Maximum Junction Temperature ...................... +150°C

† Notice:

 

Stresses above those listed under "Absolute

Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.

DC CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, over the operating temperature range with 4.5V

 V

DD

 16V.

Typical values are measured at T

A

= +25°C,  V

DD

= 16V.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Input

Logic ‘1’, High Input Voltage

V

IH

2.0

V

Logic ‘0’, Low Input Voltage

V

IL

0.8

V

Input Current

I

IN

-1.0

1.0

µA

0V

 V

IN

 V

DD, 

T

A

= +25°C

-10

10

-40°C

 T

A

 +85°C

Output

High Output Voltage

V

OH

V

DD

– 0.025

V

DC Test

Low Output Voltage

V

OL

0.025

V

DC Test

Output Resistance

R

O

8

11

V

DD

= 16V,  I

O

= 10 mA, 

T

A

= +25°C

10

14

0°C

 T

A

 +70°C

10

14

-40°C

 T

A

 +85°C

Peak Output Current

I

PK

1.0

A

V

DD

= 16V

Latch-Up Protection 
Withstand Reverse Current

I

REV

0.5

A

Duty cycle

 2%, t  300 µs,

V

DD

= 16V

Switching Time (

Note 1

)

Rise Time

t

R

25

35

ns

T

A

= +25°C

27

40

0°C

 T

A

 +70°C

29

40

-40°C

 T

A

 +85°C, 

Figure 4-1

Fall Time

t

F

25

35

ns

T

A

= +25°C

27

40

0°C

 T

A

 +70°C

29

40

-40°C

 T

A

 +85°C, 

Figure 4-1

Delay Time

t

D1

30

40

ns

T

A

= +25°C

33

45

0°C

 T

A

 +70°C

35

45

-40°C

 T

A

 +85°C, 

Figure 4-1

Delay Time

t

D2

30

40

ns

T

A

= +25°C

33

45

0°C

 T

A

 +70°C

35

45

-40°C

 T

A

 +85°C, 

Figure 4-1

Note 1:

Switching times ensured by design.

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TC1411/TC1411N

DS20001390F-page 4

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Power Supply

Power Supply Current

I

S

0.5

1.0

mA

V

IN

= 3V,  V

DD

= 16V

0.1

0.15

V

IN

= 0V

TEMPERATURE CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V

 V

DD

 16V.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Temperature Ranges

Specified Temperature Range (C)

T

A

0

+70

ºC

Specified Temperature Range (E)

T

A

-40

+85

ºC

Specified Temperature Range (V)

T

A

-40

+125

ºC

Maximum Junction Temperature

T

J

+150

ºC

Storage Temperature Range

T

A

-65

+150

ºC

Package Thermal Resistances

Thermal Resistance, 8L-MSOP

JA

211

ºC/W

Thermal Resistance, 8L-PDIP

JA

89.3

ºC/W

Thermal Resistance, 8L-SOIC

JA

149.5

ºC/W

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise noted, over the operating temperature range with 4.5V

 V

DD

 16V.

Typical values are measured at T

A

= +25°C,  V

DD

= 16V.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Note 1:

Switching times ensured by design.

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DS20001390F-page 5

TC1411/TC1411N

2.0

TYPICAL PERFORMANCE CURVES

Note: Unless otherwise indicated, over operating temperature range with 4.5V

 V

DD

 16V.

FIGURE 2-1:

Quiescent Supply Current 

vs. Supply Voltage.

FIGURE 2-2:

Input Threshold vs. Supply 

Voltage.

FIGURE 2-3:

High-State Output 

Resistance vs. Supply Voltage.

FIGURE 2-4:

Quiescent Supply Current 

vs. Temperature.

FIGURE 2-5:

Input Threshold vs. 

Temperature.

FIGURE 2-6:

Low-State Output 

Resistance vs. Supply Voltage.

Note:

The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

0

100

200

300

400

500

16

14

12

10

8

6

4

V

IN

 = 3V

V

IN

 = 0V

T

A

 = +25

°C

I

SUPPLY

 (

µ

A)

V

DD

 (V)

1.1

1.2

1.3

1.4

1.5

1.6

16

14

12

10

8

6

4

T

A

 = +25

°C

V

DD

 (V)

V

THRESHOLD

 (V)

V

IH

V

IL

R

DS-ON

 (Ohms)

V

DD

 (V)

0

5

10

15

20

25

16

14

12

10

8

6

4

T

A

 = -40

°C

T

A

 = +25

°C

T

A

 = +85

°C

-40

-20

0

20

40

60

80

0

100

200

300

400

500

I

SUPPLY

 (

µ

A)

V

IN

 = 3V

V

IN

 = 0V

V

SUPPLY

 = 16V

TEMPERATURE (

°C)

-40

-20

0

20

40

60

80

1.1

1.2

1.3

1.4

1.5

1.6

V

SUPPLY

 = 16V

TEMPERATURE (

°C)

V

THRESHOLD

 (V)

V

IH

V

IL

R

DS-ON

 (Ohms)

V

DD

 (V)

0

5

10

15

20

25

16

14

12

10

8

6

4

T

A

 = -40

°C

T

A

 = +25

°C

T

A

 = +85

°C

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TC1411/TC1411N

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 2001-2015 Microchip Technology Inc.

Note: Unless otherwise indicated, over operating temperature range with 4.5V

 V

DD

 16V.

FIGURE 2-7:

Rise Time vs. Supply 

Voltage.

FIGURE 2-8:

Propagation Delay vs. 

Supply Voltage.

FIGURE 2-9:

Rise and Fall Times vs. 

Capacitive Load.

FIGURE 2-10:

Fall Time vs. Supply 

Voltage.

FIGURE 2-11:

Propagation Delay vs. 

Supply Voltage.

FIGURE 2-12:

Propagation Delays vs. 

Capacitive Load.

V

DD

 (V)

t

RISE 

(nsec)

0

20

40

60

80

100

16

14

12

10

8

6

4

T

A

 = -40

°C

T

A

 = +25

°C

T

A

 = +85

°C

C

LOAD

 = 1000 pF

0

20

40

60

80

100

16

14

12

10

8

6

4

T

A

 = -40

°C

T

A

 = +25

°C

T

A

 = +85

°C

V

DD

 (V)

C

LOAD

 = 1000 pF

t

D1 

(nsec)

0

500

1000

1500

2000

2500

3000

3500

0

20

40

60

80

100

t

FALL

t

RISE

t

RISE

, t

FALL

 (nsec)

C

LOAD

 (pF)

T

A

 = +25

°C

V

DD

 = 16V

t

FALL 

(nsec)

0

20

40

60

80

100

16

14

12

10

8

6

4

T

A

 = +85

°C

T

A

 = -40

°C

T

A

 = +25

°C

C

LOAD

 = 1000 pF

V

DD

 (V)

V

DD

 (V)

t

D2 

(nsec)

0

20

40

60

80

100

16

14

12

10

8

6

4

C

LOAD

 = 1000 pF

T

A

 = -40

°C

T

A

 = +25

°C

T

A

 = +85

°C

C

LOAD

 (pF)

Propagation Delays (nsec)

t

D1

0

500

1000

1500

2000

2500

3000

3500

26

28

30

32

34

36

t

D2

T

A

 = +25

°C

V

DD

 = 16V

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TC1411/TC1411N

3.0

PIN DESCRIPTIONS

The descriptions of the pins are listed in 

Table 3-1

.

3.1

Supply Input (V

DD

)

The V

DD

 input is the bias supply for the MOSFET driver

and is rated for 4.5V to 16V with respect to the ground
pin. The V

DD

 input should be bypassed to ground with

a local ceramic capacitor. The value of the capacitor
should be chosen based on the capacitive load that is
being driven. A value of 1.0 µF is suggested.

3.2

Control Input (IN)

The MOSFET driver input is a high-impedance,
TTL/CMOS-compatible input. The input has 300 mV of
hysteresis between the high and low thresholds that
prevents output glitching even when the rise and fall
time of the input signal is very slow.

3.3

CMOS Push-pull Output
(OUT, OUT)

The MOSFET driver output is a low impedance, CMOS
push-pull style output, capable of driving a capacitive
load with 1A peak currents.

3.4

Ground (GND)

The ground pins are the return path for the bias current
and for the high-peak currents which discharge the
load capacitor. The ground pins should be tied into a
ground plane or have very short traces to the bias
supply source return.

3.5

No Connect (NC)

No internal connection.

TABLE 3-1:

PIN FUNCTION TABLE

Pin 

No.

TC1411

MSOP, PDIP, SOIC

TC1411N

MSOP, PDIP, SOIC

Description

1

V

DD

V

DD

Supply input, 4.5V to 16V

2

IN

IN

Control input

3

NC

NC

No connection

4

GND

GND

Ground

5

GND

GND

Ground

6

OUT

OUT

CMOS push-pull output, common to pin 7

7

OUT

OUT

CMOS push-pull output, common to pin 6

8

V

DD

V

DD

Supply input, 4.5V to 16V

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TC1411/TC1411N

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4.0

APPLICATION INFORMATION

FIGURE 4-1:

Switching Time Test Circuit.

C

L

 = 1000 pF

0.1 µF

4.7 µF

Inverting Driver

Non-inverting Driver

Input

V

DD

 = 16V

Input

Output

t

D1

t

F

t

R

t

D2

Input: 100 kHz,

square wave,

t

RISE

 = t

FALL

 

 10 ns

Output

Input

Output

t

D1

t

F

t

R

t

D2

+5V

10%

90%

10%

90%

10%

90%

V

DD

0V

90%

10%

10%

10%

90%

+5V

V

DD

0V

0V

0V

90%

4, 5

2

6, 7

1, 8

TC1411

TC1411N

TC1411

TC1411N

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TC1411/TC1411N

5.0

PACKAGING INFORMATION

5.1

Package Marking Information

XXXXXXXX

XXXXXNNN

YYWW

8-Lead PDIP (300 mil)

Example

TC1411

CPA^^ 256

 1317

3

e

OR

TC1411

CPA256

 1317

Legend: XX...X

Customer-specific information

Y

Year code (last digit of calendar year)

YY

Year code (last 2 digits of calendar year)

WW

Week code (week of January 1 is week ‘01’)

NNN

Alphanumeric traceability code

  

Pb-free JEDEC

®

 designator for Matte Tin (Sn)

*

This package is Pb-free. The Pb-free JEDEC designator (     )
can be found on the outer packaging for this package.

Note:

In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.

3

e

3

e

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TC1411/TC1411N

DS20001390F-page 10

 2001-2015 Microchip Technology Inc.

8-Lead SOIC (3.90 mm)

Example

NNN

TC1411C

OA^^ 1317

256

3

e

OR

8-Lead MSOP (3x3 mm)

Example

1411E

317256

TC1411

COA1317

256

Maker
Microchip Technology Inc.
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