2001-2015 Microchip Technology Inc.
DS20001389F-page 1
TC1410/TC1410N
Features
• Latch-Up Protected: Will Withstand 500 mA
Reverse Current
• Input Will Withstand Negative Inputs up to 5V
• Electrostatic Discharge (ESD) Protected: 2.0 kV
(HBM) and 400V (MM)
• High Peak Output Current: 0.5A
• Wide Input Supply Voltage Operating Range:
- 4.5V to 16V
• High Capacitive Load Drive Capability:
- 500 pF in 25 ns
• Short Delay Time: 30 ns typical
• Consistent Delay Times With Changes in Supply
Voltage
• Matched Delay Times
• Low Supply Current
- With Logic ‘1’ Input: 500 µA
- With Logic ‘0’ Input: 100 µA
• Low Output Impedance: 16
• Available in Space-Saving 8-pin MSOP Package
• Pinout – same as TC1411/TC1412/TC1413
Applications
• Switch Mode Power Supplies
• Line Drivers
• Pulse Transformer Drive
• Relay Driver
General Description
The TC1410/TC1410N are 0.5A CMOS buffers/drivers.
They will not latch up under any conditions within their
power and voltage ratings. They are not subject to
damage when up to 5V of noise spiking of either
polarity occurs on the ground pin. They can accept,
without damage or logic upset, up to 500 mA of current
of either polarity being forced back into their output. All
terminals are fully protected against Electrostatic
Discharge (ESD) up to 2.0 kV (HBM) and 400V (MM).
As MOSFET drivers, the TC1410/TC1410N can easily
charge a 500 pF gate capacitance in 25 ns with
matched rise and fall times and provide low enough
impedance in both the ‘ON’ and ‘OFF’ states to ensure
the MOSFET’s intended state will not be affected, even
by large transients. The leading and trailing edge
propagation delay times are also matched to allow
driving short-duration inputs with greater accuracy.
Package Type
8-Pin MSOP/PDIP/SOIC
1
2
3
4
V
DD
5
6
7
8
OUT
GND
V
DD
IN
NC
GND
OUT
T
C
1410
NC = No Connection
2
6,7
Inverting
2
6,7
Non-inverting
1
2
3
4
5
6
7
8
T
C
1410
N
V
DD
IN
NC
GND
V
DD
OUT
GND
OUT
Note: Duplicate pins must be connected together
for proper operation.
0.5A High-Speed MOSFET Drivers
TC1410/TC1410N
DS20001389F-page 2
2001-2015 Microchip Technology Inc.
Functional Block Diagram
Effective
Input C = 10 pF
Output
Input
GND
V
DD
300 mV
4.7V
Inverting
Non-inverting
Output
Output
TC1410
TC1410
TC1410N
2001-2015 Microchip Technology Inc.
DS20001389F-page 3
TC1410/TC1410N
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Supply Voltage ..................................................... +20V
Input Voltage ...................... V
DD
+ 0.3V to GND – 5.0V
Power Dissipation (T
A
70°C)
MSOP .......................................................... 340 mW
PDIP ............................................................ 730 mW
SOIC............................................................ 470 mW
Storage Temperature Range .............. -65°C to +150°C
Maximum Junction Temperature ...................... +150°C
† Notice:
Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
DC ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, over the operating temperature range with 4.5V
V
DD
16V.
Typical values are measured at T
A
= +25°C, V
DD
= 16V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Input
Logic ‘1’, High Input Voltage
V
IH
2.0
—
—
V
Logic ‘0’, Low Input Voltage
V
IL
—
—
0.8
V
Input Current
I
IN
-1
—
1
µA
0V
V
IN
V
DD,
T
A
= +25°C
-10
—
10
-40°C
T
A
+85°C
Output
High Output Voltage
V
OH
V
DD
– 0.025
—
—
V
DC Test
Low Output Voltage
V
OL
—
—
0.025
V
DC Test
Output Resistance
R
O
—
16
22
V
DD
= 16V, I
O
= 10 mA,
T
A
= +25°C
—
20
28
0°C
T
A
+70°C
—
20
28
-40°C
T
A
+85°C
Peak Output Current
I
PK
—
0.5
—
A
V
DD
= 16V
Latch-Up Protection
Withstand Reverse Current
I
REV
—
0.5
—
A
Duty cycle
2%, t 300 µs,
V
DD
= 16V
Switching Time (
Note 1
)
Rise Time
t
R
—
25
35
ns
T
A
= +25°C
—
27
40
0°C
T
A
+70°C
—
29
40
-40°C
T
A
+85°C,
Figure 4-1
Fall Time
t
F
—
25
35
ns
T
A
= +25°C
—
27
40
0°C
T
A
+70°C
—
29
40
-40°C
T
A
+85°C,
Figure 4-1
Delay Time
t
D1
—
30
40
ns
T
A
= +25°C
—
33
45
0°C
T
A
+70°C
—
35
45
-40°C
T
A
+85°C,
Figure 4-1
Delay Time
t
D2
—
30
40
ns
T
A
= +25°C
—
33
45
0°C
T
A
+70°C
—
35
45
-40°C
T
A
+85°C,
Figure 4-1
Note 1:
Switching times ensured by design.
TC1410/TC1410N
DS20001389F-page 4
2001-2015 Microchip Technology Inc.
Power Supply
Power Supply Current
I
S
—
0.5
1.0
mA
V
IN
= 3V, V
DD
= 16V
—
0.1
0.15
V
IN
= 0V
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V
V
DD
16V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Temperature Ranges
Specified Temperature Range (C)
T
A
0
—
+70
ºC
Specified Temperature Range (E)
T
A
-40
—
+85
ºC
Maximum Junction Temperature
T
J
—
—
+150
ºC
Storage Temperature Range
T
A
-65
—
+150
ºC
Package Thermal Resistances
Thermal Resistance, 8L-MSOP
JA
—
211
—
ºC/W
Thermal Resistance, 8L-PDIP
JA
—
89.3
—
ºC/W
Thermal Resistance, 8L-SOIC
JA
—
149.5
—
ºC/W
DC ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, over the operating temperature range with 4.5V
V
DD
16V.
Typical values are measured at T
A
= +25°C, V
DD
= 16V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Note 1:
Switching times ensured by design.
2001-2015 Microchip Technology Inc.
DS20001389F-page 5
TC1410/TC1410N
2.0
TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, over operating temperature range with 4.5V
V
DD
16V.
FIGURE 2-1:
Quiescent Supply Current
vs. Supply Voltage.
FIGURE 2-2:
Input Threshold vs. Supply
Voltage.
FIGURE 2-3:
High-State Output
Resistance vs. Supply Voltage.
FIGURE 2-4:
Quiescent Supply Current
vs. Temperature.
FIGURE 2-5:
Input Threshold vs.
Temperature.
FIGURE 2-6:
Low-State Output
Resistance vs. Supply Voltage.
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0
100
200
300
400
500
16
14
12
10
8
6
4
V
IN
= 3V
V
IN
= 0V
T
A
= +25
°C
I
SUPPLY
(
µ
A)
V
DD
(V)
1.1
1.2
1.3
1.4
1.5
1.6
16
14
12
10
8
6
4
T
A
= +25
°C
V
DD
(V)
V
THRESHOLD
(V)
V
IH
V
IL
0
10
20
30
40
50
16
14
12
10
8
6
4
V
DD
(V)
R
DS-ON
(Ohms)
T
A
= -40
°C
T
A
= +25
°C
T
A
= +85
°C
-40
-20
0
20
40
60
80
0
100
200
300
400
500
I
SUPPLY
(
µ
A)
V
IN
= 3V
V
IN
= 0V
V
SUPPLY
= 16V
TEMPERATURE (
°C)
-40
-20
0
20
40
60
80
1.1
1.2
1.3
1.4
1.5
1.6
V
SUPPLY
= 16V
TEMPERATURE (
°C)
V
THRESHOLD
(V)
V
IH
V
IL
0
10
20
30
40
50
16
14
12
10
8
6
4
V
DD
(V)
R
DS-ON
(Ohms)
T
A
= -40
°C
T
A
= +25
°C
T
A
= +85
°C
TC1410/TC1410N
DS20001389F-page 6
2001-2015 Microchip Technology Inc.
Note: Unless otherwise indicated, over operating temperature range with 4.5V
V
DD
16V.
FIGURE 2-7:
Rise Time vs. Supply
Voltage.
FIGURE 2-8:
Propagation Delay vs.
Supply Voltage.
FIGURE 2-9:
Rise and Fall Times vs.
Capacitive Load.
FIGURE 2-10:
Fall Time vs. Supply
Voltage.
FIGURE 2-11:
Propagation Delay vs.
Supply Voltage.
FIGURE 2-12:
Propagation Delays vs.
Capacitive Load.
0
20
40
60
80
100
16
14
12
10
8
6
4
T
A
= -40
°C
T
A
= +25
°C
T
A
= +85
°C
V
DD
(V)
C
LOAD
= 500 pF
t
RISE
(nsec)
0
20
40
60
80
100
16
14
12
10
8
6
4
T
A
= -40
°C
T
A
= +25
°C
T
A
= +85
°C
V
DD
(V)
C
LOAD
= 500 pF
t
D1
(nsec)
0
500
1000
1500
2000
2500
3000
3500
0
20
40
60
80
100
t
FALL
t
RISE
T
A
= +25
°C
V
DD
= 16V
t
RISE
, t
FALL
(nsec)
C
LOAD
(pF)
0
20
40
60
80
100
16
14
12
10
8
6
4
V
DD
(V)
t
FALL
(nsec)
T
A
= -40
°C
C
LOAD
= 500 pF
T
A
= +25
°C
T
A
= +85
°C
0
20
40
60
80
100
16
14
12
10
8
6
4
V
DD
(V)
C
LOAD
= 500 pF
t
D2
(nsec)
T
A
= -40
°C
T
A
= +25
°C
T
A
= +85
°C
0
500
1000
1500
2000
2500
3000
3500
25
29
33
37
41
45
t
D2
t
D1
T
A
= +25
°C
V
DD
= 16V
C
LOAD
(pF)
Propagation Delays (nsec)
2001-2015 Microchip Technology Inc.
DS20001389F-page 7
TC1410/TC1410N
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in
Table 3-1
.
3.1
Supply Input (V
DD
)
The V
DD
input is the bias supply for the MOSFET driver
and is rated for 4.5V to 16V with respect to the ground
pin. The V
DD
input should be bypassed to ground with
a local ceramic capacitor. The value of the capacitor
should be chosen based on the capacitive load that is
being driven. A value of 1.0 µF is suggested.
3.2
Control Input (IN)
The MOSFET driver input is a high-impedance,
TTL/CMOS-compatible input. The input also has
300 mV of hysteresis between the high and low
thresholds that prevents output glitching even when the
rise and fall time of the input signal is very slow.
3.3
CMOS Push-Pull Output
(OUT, OUT)
The MOSFET driver output is a low-impedance,
CMOS, push-pull style output, capable of driving a
capacitive load with 0.5 A peak currents.
3.4
Ground (GND)
The ground pins are the return path for the bias current
and for the high peak currents that discharge the load
capacitor. The ground pins should be tied into a ground
plane or have very short traces to the bias supply
source return.
TABLE 3-1:
PIN FUNCTION TABLE
Pin
No.
TC1410
MSOP, PDIP, SOIC
TC1410N
MSOP, PDIP, SOIC
Description
1
V
DD
V
DD
Supply input, 4.5V to 16V
2
IN
IN
Control input
3
NC
NC
No connection
4
GND
GND
Ground
5
GND
GND
Ground
6
OUT
OUT
CMOS push-pull output, common to pin 7
7
OUT
OUT
CMOS push-pull output, common to pin 6
8
V
DD
V
DD
Supply input, 4.5V to 16V
TC1410/TC1410N
DS20001389F-page 8
2001-2015 Microchip Technology Inc.
4.0
APPLICATIONS INFORMATION
FIGURE 4-1:
Switching Time Test Circuit.
C
L
= 500 pF
0.1 µF
1.0 µF
Inverting Driver
Non-inverting Driver
Input
V
DD
= 16V
Input
Output
t
D1
t
F
t
R
t
D2
Input: 100 kHz,
square wave,
t
RISE
= t
FALL
10 ns
Output
Input
Output
t
D1
t
F
t
R
t
D2
+5V
10%
90%
10%
90%
10%
90%
V
DD
0V
90%
10%
10%
10%
90%
+5V
V
DD
0V
0V
0V
90%
4, 5
2
6, 7
1, 8
TC1410
TC1410N
TC1410
TC1410N
2001-2015 Microchip Technology Inc.
DS20001389F-page 9
TC1410/TC1410N
5.0
PACKAGING INFORMATION
5.1
Package Marking Information
XXXXXXXX
XXXXXNNN
YYWW
8-Lead PDIP (300 mil)
Example
TC1410
CPA^^ 256
1316
3
e
OR
TC1410
CPA256
1316
Legend: XX...X
Customer-specific information
Y
Year code (last digit of calendar year)
YY
Year code (last 2 digits of calendar year)
WW
Week code (week of January 1 is week ‘01’)
NNN
Alphanumeric traceability code
Pb-free JEDEC
®
designator for Matte Tin (Sn)
*
This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note:
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
TC1410/TC1410N
DS20001389F-page 10
2001-2015 Microchip Technology Inc.
8-Lead SOIC (3.90 mm)
Example
NNN
TC1410C
OA^^ 1316
256
3
e
OR
8-Lead MSOP (3x3 mm)
Example
1410E
316256
TC1410
COA1316
256