2017 Microchip Technology Inc.
DS20005839A-page 1
MIC2800
Features
• 2.7V to 5.5V Input Voltage Range
• 2 MHz DC/DC Converter and Two LDOs
• Integrated Power-on Reset (POR)
- Adjustable POR Delay Time
• LOWQ Mode
- 30 µA Total IQ when in LOWQ Mode
• DC/DC Converter
- Up to 600 mA of Output Current in PWM
Mode
- LOWQ
Mode: NO RIPPLE Light Load Mode
- 75 µV
RMS
Output Noise in LOWQ Mode
- 2 MHz PWM Mode Operation
- > 90% Efficiency
• LDO1 Input Voltage Directly Connected to DC/DC
Converter Output Voltage for Maximum Efficiency
- Ideal for 1.8V to 1.5V Conversion
- 300 mA Output Current from 1.8V Input
- Output Voltage Down to 0.8V
• LDO2 – 300 mA Output Current Capable
• Thermal Shutdown Protection
• Current Limit Protection
• Simple, Leakage-Free Interfacing to Host MPU in
Applications with Backup Power
• Tiny 16-Pin 3mm x 3mm QFN Package
Applications
• Embedded MPU and MCU Power
• Portable and Wearable Applications
• Low-Power RF Systems
• Backup Power Systems
General Description
The MIC2800 is a high-performance power
management IC, featuring three output voltages with
maximum efficiency. Integrating a 2 MHz DC/DC
converter with an LDO post-regulator, the MIC2800
gives two high-efficiency outputs with a second,
300 mA LDO for maximum flexibility. The MIC2800
features a LOWQ mode, reducing the total current
draw while in this mode to less than 30 µA. In LOWQ
mode, the output noise of the DC/DC converter is
reduced to 75 µV
RMS
, significantly lower than other
converters that use a PFM light load mode that can
interfere with sensitive RF circuitry.
The DC/DC converter uses small values of L and C to
reduce board space but still retains efficiencies over
90% at load currents up to 600 mA.
The MIC2800 operates with very small ceramic output
capacitors and inductors for stability, reducing required
board space and component cost and it is available in
various output voltage options in the 16-pin
3mm x 3mm QFN leadless package.
Package Type
MIC2800
16-PIN 3mm
X
3mm QFN
EN
2
Pin 16
Pin 15
P
in 14
P
in 13
EN1
C
BYP
C
SET
LOWQ
BIAS
SGND
PGND
POR
LDO1
LDO
FB
Pin 1
Pin 2
Pin 3
Pin 4
Pin 12
Pin 11
Pin 10
Pin 9
SW
V
IN
V
IN
LD
O
2
Pin 5
Pin 6
Pi
n 7
Pi
n 8
Digital Power Management IC 2 MHz, 600 mA DC/DC with Dual
300 mA/300 mA Low V
IN
LDOs
MIC2800
DS20005839A-page 2
2017 Microchip Technology Inc.
Typical Application Circuit (simplified)
Functional Diagram
V
IN
=
5V typ
SW
LDO
MIC2800-G1JS
C1
4.7 µF
VIN
EN2
Enable
VIN
L1
2.2 µH
PGND
POR
2.2 µF
VDDIO_DDR
nRST
GPIO
SGND
/LOWQ
C
BIAS
100 nF
10 µF
LDO1
10 µF
VDD_CORE
BIAS
LDO2
10 µF
VDD_IO
C
BYP
100 nF
C
BYP
C
SET
10 nF
C
SET
EN1
RC
delay
SAMA5D2
MPU
DDR2
2017 Microchip Technology Inc.
DS20005839A-page 3
MIC2800
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage (V
IN
) ....................................................................................................................................–0.3 to +6.0V
Enable Input Voltage (V
EN1, EN2
) .....................................................................................................–0.3V to +(V
IN
+0.3V)
LOWQ, POR ............................................................................................................................................. –0.3V to +6.0V
Power Dissipation (
Note 1
) .................................................................................................................... Internally Limited
Lead Temperature (soldering, 10 sec.) ................................................................................................................. +260°C
Storage Temperature (T
S
) ...................................................................................................................... –65°C to +150°C
ESD Rating (
Note 2
) .................................................................................................................................................. 2 kV
Operating Ratings ‡
Supply Voltage (V
IN
) ................................................................................................................................. +2.7V to +5.5V
Enable Input Voltage (V
EN1, EN2
) ..................................................................................................................... 0V to +V
IN
LOWQ, POR .................................................................................................................................................. 0V to +5.5V
Junction Temperature (T
J
) ..................................................................................................................... –40°C to +125°C
Junction Thermal Resistance QFN-16 (θ
JA
) .......................................................................................................+45°C/W
†
Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability.
‡ Notice:
The device is not guaranteed to function outside its operating ratings.
1:
The maximum allowable power dissipation of any T
A
(ambient temperature) is P
D(max)
= (T
J(max)
– T
A
) / θ
JA
.
Exceeding the maximum allowable power dissipation will result in excessive die temperature, and the
regulator will go into thermal shutdown.
2:
Devices are ESD sensitive. Handling precautions recommended. Human body model, 1.5 kΩ in series with
100 pF.
MIC2800
DS20005839A-page 4
2017 Microchip Technology Inc.
TABLE 1-1:
ELECTRICAL CHARACTERISTICS (
Note 1
)
Electrical Characteristics:
V
IN
= EN1 = EN2 = LOWQ = VOUT (
Note 2
) + 1V; C
OUTDC/DC
= 2.2 µF, C
OUT1
= C
OUT2
= 2.2 µF; I
OUTDC/DC
= 100 mA;
I
OUTLDO1
= I
OUTLDO2
= 100 µA; T
J
= 25°C, bold values indicate –40°C ≤ TJ ≤ +125°C; unless noted.
Parameter
Symbol
Min.
Typ.
Max.
Units
Conditions
UVLO Threshold
UVLO
TH
2.45
2.55
2.65
V
Rising input voltage during turn on
UVLO Hysteresis
UVLO
HYS
—
100
—
mV
Ground Pin Current
I
GND
—
800
55
1100
85
95
µA
V
FB
= GND (not switching);
LDO2 Only (EN1 = LOW)
Ground Pin Current in
Shutdown
I
GND_SHDN
—
0.2
5
µA
All EN = 0V
Ground Pin Current
(LOWQ mode)
I
GND_LOWQ
—
30
20
60
80
70
µA
µA
µA
All channels ON, I
DC/DC
= I
LDO1
=
I
LDO2
= 0 mA
DC/DC and LDO1 OFF; IL
DO2
=
0 mA
Overtemperature
Shutdown
T
SD
—
160
—
°C
Overtemperature
Shutdown Hysteresis
T
SDHYS
—
23
—
°C
Enable Inputs (EN1; EN2; /LOWQ)
Enable Input Voltage
Logic Low
V
IH
—
—
0.2
V
Enable Input Voltage
Logic High
V
IL
1.0
—
—
V
Enable Input Current
I
ENLK
—
0.1
1
µA
V
IL
≤ 0.2V
—
0.1
1
µA
V
IH
≥1.0V
Turn-on Time
Turn-on Time
(LDO1 and LDO2)
t
TURN-ON
—
240
120
500
350
µs
EN2 = V
IN
EN1 = V
IN
Turn-on Time (DC/DC)
t
TURN-ON
—
83
350
µs
EN2 = V
IN
; I
LOAD
= 300 mA; C
BYP
=
0.1 µF
POR Output
POR Threshold Voltage,
Failing
V
THLOW_POR
90
91
—
%
Low Threshold, % of nominal
(V
DC/DC
or V
LDO1
or V
LDO2
) (Flag
ON)
POR Threshold Voltage,
Rising
V
THIGH_POR
—
96
99
%
High Threshold, % of nominal
(V
DC/DC
AND V
LDO1
AND V
LDO2
)
(Flag OFF)
VOL
VOL
POR
—
10
100
mV
POR Output Logic Low Voltage; IL =
250 µA
IPOR ILEAK
POR
—
0.01
1
µA
Flag Leakage Current, Flag OFF
CSET INPUT
CSET Pin Current
Source
I
CSET
0.75
1.25
1.75
µA
V
CSET
= 0V
CSET Pin Threshold
Voltage
VTH
CSET
—
1.25
—
V
POR = High
Note 1:
Specification for packaged product only.
2:
V
OUT
denotes the highest of the three output voltage.
2017 Microchip Technology Inc.
DS20005839A-page 5
MIC2800
TABLE 1-2:
ELECTRICAL CHARACTERISTICS - DC/DC CONVERTER
Electrical Characteristics:
V
IN
= V
OUTDC/DC
+ 1V; EN1 = V
IN
; EN2 = GND; I
OUTDC/DC
= 100 mA; L = 2.2 µH;
C
OUTDC/DC
= 2.2 µF; T
J
= 25°C, bold values indicate –40°C to + 125°C; unless noted.
Parameter
Symbol
Min.
Typ.
Max.
Units
Conditions
LOWQ = High (Full Power Mode)
Output Voltage Accuracy
V
OUT
–2
–3
—
+2
+3
%
Fixed Output Voltages
Current Limit in PWM
Mode
I
LIM
0.75
1
1.6
A
V
OUT
= 0.9*V
NOM
FB pin voltage (ADJ only)
V
FB
—
800
—
mV
FB pin input current (ADJ
only)
I
FB
—
1
5
nA
Output Voltage Line
Regulation
(∆V
OUT
/V
OUT
)
/∆V
IN
—
0.2
—
%/V
V
OUT
> 2.4V; V
IN
= V
OUT
+ 300 mV
to 5.5V, I
LOAD
= 100 mA
V
OUT
< 2.4V; V
IN
= 2.7V to 5.5V,
I
LOAD
= 100 mA
Output Voltage Load
Regulation
∆V
OUT
/V
OUT
—
0.2
1.5
%
20 mA < I
LOAD
< 300 mA
Maximum Duty Cycle
DC
MAX
100
—
—
%
V
FB
≤ 0.4V
High-Side Switch
ON-Resistance
—
0.6
—
Ω
I
SW
= 150 mA V
FB
= 0.7
VFB_NOM
Low-Side Switch
ON-Resistance
0.8
I
SW
= -150 mA V
FB
= 1.1
VFB_NOM
Oscillator Frequency
f
osc
1.8
2
2.2
MHz
Output Voltage Noise
V
N
—
60
—
µV
RMS
C
OUT
= 2.2 µF; C
BYP
= 0.1 µF;
10 Hz to 100 KHz
LOWQ = Low (Light Load Mode)
Output Voltage Accuracy
V
OUT
–2.0
—
+2.0
%
Variation from nominal V
OUT
–3.0
+3.0
Variation from nominal V
OUT
;
–40°C to +125°C
Output Voltage Temp.
Coefficient
TC
VOUT
—
40
—
ppm/C
Line Regulation
(∆V
OUT
/V
OUT
)
/∆V
IN
—
0.02
0.3
0.6
%/V
V
IN
= V
OUT
+ 1V to 5.5V;
I
OUT
= 100 µA
Load Regulation
∆V
OUT
/V
OUT
—
0.2
1.5
%
I
OUT
= 100 µA to 50 mA
Ripple Rejection
PSRR
—
50
30
—
dB
f = up to 1 kHz; C
OUT
= 2.2 µF;
C
BYP
= 0.1 µF
f = 20 kHz; C
OUT
= 2.2 µF;
C
BYP
= 0.1 µF
Current Limit
I
LIM_LOWQ
80
120
190
mA
V
OUT
= 0V
MIC2800
DS20005839A-page 6
2017 Microchip Technology Inc.
TABLE 1-3:
ELECTRICAL CHARACTERISTICS - LDO 1
Electrical Characteristics:
V
IN
= V
OUTDC/DC
; EN1 = V
IN
; EN2 = GND; C
OUT1
= 2.2 µF, I
OUT1
= 100 µA; T
J
= 25°C,
bold
values indicate –40°C≤ T
J
≤ +125°C; unless noted.
Parameter
Symbol
Min.
Typ.
Max.
Units
Conditions
LOWQ = High (Full Power Mode)
Output Voltage Accuracy
V
OUT
–2.0
—
+2.0
%
Variation from nominal V
OUT
–3.0
+3.0
Variation from nominal V
OUT
;
–40°C to +125°C
Output Current Capability
I
OUT
300
120
—
—
mA
V
IN
≥ 1.8V
V
IN
≥ 1.5V
Load Regulation
∆V
OUT
/V
OUT
—
0.17
0.3
1.5
%
I
OUT
= 100 µA to 150 mA
I
OUT
= 100 µA to 300 mA
Current Limit
I
LIM
350
500
700
mA
V
OUT
= 0V
Ripple Rejection
PSRR
70
44
—
dB
f = up to 1 kHz; C
OUT
= 2.2 µF;
C
BYP
= 0.1 µF
f = 20 kHz; C
OUT
= 2.2 µF;
C
BYP
= 0.1 µF
Output Voltage Noise
V
N
—
30
—
µV
RMS
C
OUT
= 2.2 µF; C
BYP
= 0.1 µF;
10 Hz to 100 KHz
LOWQ = Low (Light Load Mode)
Output Voltage Accuracy
V
OUT
–3.0
—
+3.0
%
Variation from nominal V
OUT
–4.0
+4.0
Variation from nominal V
OUT
;
–40°C to +125°C
Load Regulation
∆V
OUT
/V
OUT
—
0.2
0.5
1.0
%
I
OUT
= 100 µA to 10 mA
Current Limit
I
LIM
50
85
125
mA
V
OUT
= 0V
Ripple Rejection
PSRR
—
70
42
—
dB
f = up to 1 kHz; C
OUT
= 2.2 µF;
C
BYP
= 0.1 µF
f = 20 kHz; C
OUT
= 2.2 µF;
C
BYP
= 0.1 µF
2017 Microchip Technology Inc.
DS20005839A-page 7
MIC2800
TABLE 1-4:
ELECTRICAL CHARACTERISTICS - LDO2
Electrical Characteristics:
V
IN
= V
OUTLDO2
+ 1.0V; EN1 = GND; EN2 = V
IN
; C
OUT2
= 2.2 µF; I
OUTLDO2
= 100 µA; T
J
= 25°C, bold values indicate–40°C≤ T
J
≤ +125°C; unless noted.
Parameter
Symbol
Min.
Typ.
Max.
Units
Conditions
LOWQ = High (Full Power Mode)
Output Voltage Accuracy
V
OUT
–2.0
—
+2.0
%
Variation from nominal V
OUT
–3.0
+3.0
Variation from nominal V
OUT
;
–40°C to +125°C
Line Regulation
(∆V
OUT
/V
OUT
)
/∆V
IN
—
0.02
0.3
0.6
%/V
V
IN
= V
OUT
+1V to 5.5V;
I
OUT
= 100 µA
Load Regulation
∆V
OUT
/V
OUT
—
0.20
0.25
0.40
1.5
%
I
OUT
= 100 µA to 150 mA
I
OUT
= 100 µA to 200 mA
I
OUT
= 100 µA to 300 mA
Dropout Voltage
V
DO
—
70
94
142
300
mV
I
OUT
= 150 mA; V
OUTLDO2
>= 2.7V
I
OUT
= 200 mA; V
OUTLDO2
>= 2.7V
I
OUT
= 300 mA; V
OUTLDO2
>= 2.7V
Ripple Rejection
PSRR
—
75
—
dB
f = up to 1 kHz; C
OUT
= 2.2 µF;
C
BYP
= 0.1 µF
40
f = 20 kHz; C
OUT
= 2.2 µF;
C
BYP
= 0.1 µF
Current Limit
I
LIM
400
550
850
mA
V
OUT
= 0V
Output Voltage Noise
V
N
—
25
—
µV
RMS
C
OUT
= 2.2 µF; C
BYP
= 0.1 µF;
10 Hz to 100 KHz
LOWQ = Low (Light Load Mode)
Output Voltage Accuracy
V
OUT
–3.0
—
+3.0
%
Variation from nominal V
OUT
–4.0
+4.0
Variation from nominal V
OUT
;
–40°C to +125°C
Line Regulation
(∆V
OUT
/V
OUT
)
/∆V
IN
—
0.02
0.3
0.6
%/V
V
IN
= V
OUT
+1V to 5.5V
Load Regulation
∆V
OUT
/V
OUT
—
0.2
1.0
%
I
OUT
= 100 µA to 10 mA
Dropout Voltage
V
DO
—
22
35
50
mV
I
OUT
= 10 mA; V
OUTLDO2
>= 2.7V
Ripple Rejection
PSRR
—
75
55
—
dB
f = up to 1 kHz; C
OUT
= 2.2 µF;
C
BYP
= 0.1 µF
f = 20 kHz; C
OUT
= 2.2 µF;
C
BYP
= 0.1 µF
Current Limit
I
LIM
50
85
125
mA
V
IN
= 2.7V; V
OUT
= 0V
MIC2800
DS20005839A-page 8
2017 Microchip Technology Inc.
TABLE 1-5:
TEMPERATURE SPECIFICATIONS (
Note 1
)
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Temperature Ranges
Storage Temperature Range
T
S
–65
—
+150
°C
Lead Temperature
—
—
—
+260
°C
Soldering, 10 sec.
Junction Temperature
T
J
–40
—
+125
°C
Package Thermal Resistance
16-Ld QFN
θ
JA
—
45
—
°C/W
Note 1:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
,
JA
). Exceeding the
maximum allowable power dissipation will cause the device operating junction temperature to exceed the
maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability.
2017 Microchip Technology Inc.
DS20005839A-page 9
MIC2800
2.0
TYPICAL PERFORMANCE CURVES
FIGURE 2-1:
DC/DC 1.87V
OUT
Efficiency.
FIGURE 2-2:
DC/DC 1.8V
OUT
Efficiency.
FIGURE 2-3:
DC/DC Current Limit vs.
Temperature.
FIGURE 2-4:
DC/DC Enable Threshold
vs. Supply Voltage.
FIGURE 2-5:
DC/DC Turn-on Delay vs.
Supply Voltage.
FIGURE 2-6:
DC/DC LowQ Mode Power
Supply Rejection Ratio vs. Input Voltage.
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
50%
55%
60%
65%
70%
75%
80%
85%
90%
95%
100%
0
100
200
300
400
500
600
Efficiency (%)
Output Current (mA)
4.2V
3.6V
3V
L=2.2 µH
C
OUT
=2.2 µF
/LowQ=V
IN
50%
55%
60%
65%
70%
75%
80%
85%
90%
95%
100%
0
200
400
600
Efficiency (%)
Output Current (mA)
4.2V
3.6V
3V
L=2.2 µH
C
OUT
=2.2 µF
/LowQ=V
IN
0
200
400
600
800
1000
1200
1400
-40
-20
0
20
40
60
80
100 120
Current Limit (mA)
Temperature (ºC)
EN1=EN2=V
IN
/LowQ=V
IN
C
OUT
=2.2 µF
C
BYP
=0.01 µF
500
550
600
650
700
750
800
850
900
950
1000
2.7
3.4
4.1
4.8
5.5
Enabel Threshold (mV)
Supply Voltage (V)
ON
OFF
/LowQ=V
IN
C
OUT
=2.2 µF
50.0
55.0
60.0
65.0
70.0
75.0
80.0
85.0
90.0
95.0
100.0
2.7
3.2
3.7
4.2
4.7
5.2
T
u
rn-On Delay (µSec)
Supply Voltage (V)
C
OUT
=2.2 µF
/LowQ=V
IN
-60
-50
-40
-30
-20
-10
0
10
100
1,000
10,000
100,000 1,000,000
dB
Frequency (Hz)
3.6V
4.2V
I
OUT
=50 mA
V
OUT
=1.8V
C
OUT
=2.2 µF
MIC2800
DS20005839A-page 10
2017 Microchip Technology Inc.
FIGURE 2-7:
DC/DC LowQ Mode Power
Supply Rejection Ratio vs. Output Current.
FIGURE 2-8:
DC/DC LowQ Mode LDO
Current Limit vs. Supply Voltage.
FIGURE 2-9:
DC/DC LowQ Mode LDO
Output Voltage vs. Output Current.
FIGURE 2-10:
DC/DC LowQ Mode LDO
Output Noise Spectral Density.
FIGURE 2-11:
Power Supply Rejection
Ratio (LDO1 LowQ Mode).
FIGURE 2-12:
Power Supply Rejection
Ratio (LDO1 Normal Mode).
-80
-70
-60
-50
-40
-30
-20
-10
0
10
100
1,000
10,000 100,000 1,000,000
dB
Frequency (Hz)
0 µA
100 µA
50 mA
V
IN
=3.6V
V
OUT
=1.8V
0
50
100
150
200
250
2.7
3.7
4.7
V
OUT
=1.8V
C
OUT
=2.2 µF
Supply Voltage (V)
Current Limit (mA)
1.84
1.85
1.86
1.87
1.88
1.89
1.90
0
10 20 30 40 50 60 70 80 90 100
Output V
o
tage (V)
Output Current (mA)
V
IN
=3.6V
V
OUT
=1.87V
C
OUT
=2.2 µF
/LowQ=GND
0.001
0.01
0.1
1
10
10
1,000
100,000
10,000,000
Noise µV/
¥
Hz
Frequency (Hz)
V
IN
=4.2V
C
OUT
=2.2 µF
V
OUT
=1.87V
-80
-70
-60
-50
-40
-30
-20
-10
0
10
100
1,000
10,000
100,000 1,000,000
dB
Frequency (Hz)
100 µA
50 mA
V
IN
=4.2V
V
OUT
=1.2V
C
OUT
=2.2 µF
C
BYP
=0.1µF
-80
-70
-60
-50
-40
-30
-20
-10
0
10
100
1,000
10,000
100,000 1,000,000
dB
Frequency (Hz)
100 µA
50 mA
150 mA
V
IN
=4.2V
V
OUT
=1.2V
C
OUT
=2.2 µF
C
BYP
=0.1 µF
/LowQ=V
IN