MCP87090 Data Sheet

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 2013 Microchip Technology Inc.

DS20002332B-page 1

MCP87090

Features:

• Low Drain-to-Source On Resistance (R

DS(ON)

)

• Low Total Gate Charge (Q

G

) and Gate-to-Drain 

Charge (Q

GD

)

• Low Series Gate Resistance (R

G

)

• Capable of Short Dead-Time Operation
• RoHS Compliant

Applications:

• Point-of-Load DC-DC Converters
• High Efficiency Power Management in Servers, 

Networking, and Automotive Applications

Description:

The MCP87090 is an N-Channel power MOSFET in a
popular PDFN 5 mm x 6 mm package, as well as a
PDFN 3.3 mm x 3.3 mm package. Advanced
packaging and silicon processing technologies allow
the MCP87090 to achieve a low Q

G

 for a given R

DS(ON)

value, resulting in a low Figure of Merit (FOM).
Combined with low R

G

, the low FOM of the MCP87090

device allows high efficiency power conversion with
reduced switching and conduction losses.

Package Type

Product Summary Table: 

Unless otherwise indicated, T

A

 = +25˚C

Parameters

Sym.

Min.

Typ.

Max.

Units Conditions

Operating Characteristics

Drain-to-Source Breakdown Voltage

BV

DSS

25

V

V

GS 

= 0V, I

= 250 µA

Gate-to-Source Threshold Voltage

V

GS(TH)

1.1

1.35

1.7

V

V

DS

 = V

GS

, I

= 250 µA

Drain-to-Source On Resistance

R

DS(ON)

10

12

mΩ

V

GS 

= 4.5V, I

D

 = 17A

8.5

10.5

mΩ

V

GS 

= 10V, I

= 17A

Total Gate Charge

Q

G

7.5

10

nC

V

DS

 = 12.5V, I

D

 = 17A, V

GS 

= 4.5V

Gate-to-Drain Charge

Q

GD

2.8

nC

V

DS

 = 12.5V, I

D

 = 17A

Series Gate Resistance

R

G

1.8

Thermal Characteristics

Thermal Resistance Junction-to-X, 8L 3.3x3.3-PDFN

R

θJX

70

°C/W

Note 1

Thermal Resistance Junction-to-Case, 8L 3.3x3.3-PDFN

R

θJC

3.3

°C/W

Note 2

Thermal Resistance Junction-to-X, 8L 5x6-PDFN

R

θJX

55

°C/W

Note 1

Thermal Resistance Junction-to-Case, 8L 5x6-PDFN

R

θJC

3.2

°C/W

Note 2

Note

1:

R

θJX 

is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of 2 oz. copper.  

This characteristic is dependent on user’s board design. 

2:

R

θJC

 is determined using JEDEC 51-14 Method. This characteristic is determined by design.

PDFN 5 x 6

PDFN 3.3 x 3.3

S

D

S

S

G

D

D

D

1

2

3

4

5

6

7

8

High-Speed N-Channel Power MOSFET

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MCP87090

DS20002332B-page 2

 2013 Microchip Technology Inc.

1.0

ELECTRICAL 
CHARACTERISTICS

Absolute Maximum Ratings †

V

DS

.......................................................................+25V

V

GS

........................................................... +10.0V / -8V

I

D, 

Continuous ..............................................................

8L 5x6-PDFN ............................. 51A, T

C

 = +25°C

8L 3.3x3.3-PDFN ....................... 50A, T

C

 = +25°C

P

D

.................................................................................

8L 5x6-PDFN ........................... 2.2W, T

A

 = +25°C

8L 3.3x3.3-PDFN ..................... 1.8W, T

A

 = +25°C

T

J

, T

STG

..............................................-55°C to +150°C

E

AS

 Avalanche Energy .................................... 84.5 mJ

I

D

= 13A,  L = 1 mH,  R

G

= 25Ω

† Notice:

 Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended.  Exposure to maximum
rating conditions for extended periods may affect
device reliability.

DC ELECTRICAL CHARACTERISTICS

Electrical Characteristics:

 Unless otherwise indicated, T

A

 = +25°C.

Parameters

Sym.

Min.

Typ.

Max.

Units Conditions

Static Characteristics
Drain-to-Source 
Breakdown Voltage

BV

DSS

25

V

V

GS

 = 0V, I

D

 = 250 µA

Drain-to-Source Leakage Current 

I

DSS

1

µA

V

GS

 = 0V, V

DS

 = 20V

Gate-to-Source Leakage Current

I

GSS

100

nA

V

DS

 = 0V, V

GS

 = 10V/-8V

Gate-to-Source Threshold Voltage

V

GS(TH)

1.1

1.35

1.7

V

V

DS

 = V

GS

, I

D

 = 250 µA

Drain-to-Source On Resistance

R

DS(ON)

10

12

m

V

GS

 = 4.5V, I

D

 = 17A

8.5

10.5

m

V

GS

 = 10V, I

D

 = 17A

Transconductance

g

fs

62

S

V

DS

 = 12.5V, I

D

 = 17A

Dynamic Characteristics
Input Capacitance

C

ISS

580

pF

V

GS

 = 0V, V

DS

 = 12.5V, f = 1 MHz

Output Capacitance

C

OSS

265

pF

V

GS

 = 0V, V

DS

 = 12.5V, f = 1 MHz

Reverse Transfer Capacitance

C

RSS

70

pF

V

GS

 = 0V, V

DS

 = 12.5V, f = 1 MHz

Total Gate Charge

Q

G

7.5

10

nC

V

DS

 = 12.5V, I

D

 = 17A, V

GS 

= 4.5V

Gate-to-Drain Charge

Q

GD

2.8

nC

V

DS

 = 12.5V, I

D

 = 17A

Gate-to-Source Charge

Q

GS

1.2

nC

V

DS

 = 12.5V, I

D

 = 17A

Gate Charge at V

GS(TH)

Q

G(TH)

0.8

nC

V

DS

 = 12.5V, I

D

 = 17A

Output Charge

Q

OSS

5

nC

V

DS

 = 12.5V, V

GS

 = 0

Turn-On Delay Time

t

d(on)

2.5

ns

V

DS

 = 12.5V, V

GS

 = 4.5V, 

I

D

 = 17A, R

G

 = 2

Rise Time

t

r

9.3

ns

V

DS

 = 12.5V, V

GS

 = 4.5V, 

I

D

 = 17A, R

G

 = 2

Turn-Off Delay Time

t

d(off)

5.3

ns

V

DS

 = 12.5V, V

GS

 = 4.5V, 

I

D

 = 17A, R

G

 = 2

Fall Time

t

f

2.9

ns

V

DS

 = 12.5V, V

GS

 = 4.5V, 

I

D

 = 17A, R

G

 = 2

Series Gate Resistance

R

G

1.8

Diode Characteristics
Diode Forward Voltage

V

FD

0.8

1

V

I

S

 = 17A, V

GS

 = 0V

Reverse Recovery Charge

Q

RR

11

nC

I

S

 = 17A, di/dt = 300 A/µs

Reverse Recovery Time

t

rr

11.5

nS

I

S

 = 17A, di/dt = 300 A/µs

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DS20002332B-page 3

MCP87090

Avalanche Characteristics
Avalanche Energy

E

AS

18

mJ

I

D

 = 6A, L = 1 mH, R

G

 = 25

TEMPERATURE CHARACTERISTICS

Electrical Characteristics: Unless otherwise indicated, T

A

 = +25°C

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Temperature Ranges
Operating Junction Temperature Range

T

J

-55

+150

°C

Storage Temperature Range

T

A

-55

+150

°C

Package Thermal Resistances
Thermal Resistance Junction-to-X, 8L 3.3x3.3-PDFN

R

θJX

70

°C/W

Note 1

Thermal Resistance Junction-to-Case, 
8L 3.3x3.3-PDFN

R

θJC

3.3

°C/W

Note 2

Thermal Resistance Junction-to-X, 8L 5x6-PDFN

R

θJX

55

°C/W

Note 1

Thermal Resistance Junction-to-Case, 8L 5x6-PDFN

R

θJC

3.2

°C/W

Note 2

Note 1:

R

θJX 

is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of 

2 oz. copper. This characteristic is dependent on user’s board design. 

2:

R

θJC

 is determined using JEDEC 51-14 Method. This characteristic is determined by design.

DC ELECTRICAL CHARACTERISTICS (CONTINUED)

Electrical Characteristics:

 Unless otherwise indicated, T

A

 = +25°C.

Parameters

Sym.

Min.

Typ.

Max.

Units Conditions

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MCP87090

DS20002332B-page 4

 2013 Microchip Technology Inc.

2.0

TYPICAL PERFORMANCE CURVES

Note:

 Unless otherwise indicated, T

A

 = +25°C.

FIGURE 2-1:

Typical Output 

Characteristics.

FIGURE 2-2:

Typical Transfer 

Characteristics.

FIGURE 2-3:

On Resistance vs. 

Gate-to-Source Voltage.

FIGURE 2-4:

Normalized On Resistance 

vs. Temperature.

FIGURE 2-5:

Gate-to-Source Voltage vs. 

Gate Charge.

FIGURE 2-6:

Capacitance vs. 

Drain-to-Source Voltage.

Note:

The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

20

30

40

50

60

Drain Current (A)

V

GS

= 3V

V

GS

= 10V

V

GS

= 4.5V

0

10

20

0.0

1.0

2.0

3.0

I

D

-

V

DS

– Drain-to-Source Voltage (V)

V

GS

= 2.5V

20

30

40

50

60

D

rain Current (A)

T

C

= +25°C

V

DS

= 5V

0

10

20

1.25

1.5

1.75

2

2.25

2.5

2.75

3

3.25

I

D

-

D

V

GS

- Gate-to-Source Voltage (V)

T

C

= +125°C

T

C

= -55°C

12

14

16

18

20

-

On-State Resistance 

(m

Ÿ

)

T

C

= +125°C

I

D

= 17A

6

8

10

0

2

4

6

8

10

R

DS(ON)

-

V

GS

- Gate-to-Source Voltage (V)

T

C

= +25°C

1

1.2

1.4

1.6

1.8

m

alized On-State 

R

esistance

I

D

= 17A

V

GS

= 4.5V

0.4

0.6

0.8

-60 -40 -20

0

20

40

60

80 100 120 140 160

Nor

m

R

T

- Case Temperature (°C)

4

5

6

7

8

9

10

-to-Source V

o

ltage (V)

I

D

= 17A

V

DS

= 5V

V

DS

= 12.5V

0

1

2

3

0

2

4

6

8

10

12

14

16

18

V

GS

 

-G

a

te

-

Q

- Gate Charge (nC)

0.4

0.5

0.6

0.7

0.8

0.9

1

C

apacitance (nF)

C

ISS

f =  1  MHz
V

GS

= 0V

0

0.1

0.2

0.3

0

5

10

15

20

C -

C

V

DS 

- Drain-to-Source Voltage (V)

C

OSS

C

RSS

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DS20002332B-page 5

MCP87090

Note:

 Unless otherwise indicated, T

A

 = +25°C.

FIGURE 2-7:

Gate-to-Source Threshold 

Voltage vs. Temperature.

FIGURE 2-8:

Source-to-Drain Current vs. 

Source-to-Drain Voltage.

FIGURE 2-9:

 Maximum Safe Operating 

Area 5x6-PDFN (MCP87090T-U/MF).

FIGURE 2-10:

Maximum Drain Current vs. 

Temperature 5x6-PDFN (MCP87090T-U/MF).

FIGURE 2-11:

Transient Thermal 

Impedance 5x6-PDFN (MCP87090T-U/MF).

FIGURE 2-12:

Maximum Safe Operating 

Area 3.3x3.3-PDFN (MCP87090T-U/LC).

1.3

1.5

1.7

-

G

ate-to-Source 

s

hold V

o

ltage 

(V)

I

D

= 250 μA

0.9

1.1

-75 -50 -25

0

25

50

75 100 125 150 175

V

GS(TH

)

Thre

s

T

- Case Temperature (°C)

0.1

1

10

100

o

urce-to-Drain Current 

(A)

T

C

= +25°C

T

C

= +125°C

0.001

0.01

0.0

0.2

0.4

0.6

0.8

1.0

I

SD

-S

o

V

SD

- Source-to-Drain Voltage (V)

0.01

0.1

1

10

100

1000

0.01

0.1

1

10

100

I

D

-

D

rain Current (A)

V

DS

- Drain-to-Source Voltage (V)

DC

1s

100 ms

10 ms

1 ms

Operation in this range is 
limited by R

DS(on)

R

șJA

= 55°C/W

Single Pulse

0

10

20

30

40

50

60

70

80

0

25

50

75

100

125

150

I

D

-

D

rain Current (A)

T

C

- Case Temperature (

Û&

V

GS

= 4.5V

V

GS

= 10V

0.001

0.01

0.1

1

0.001

0.1

10

1000

Z

ș

JA

-

N

ormalized Thermal 

Impedance

t

1

- Pulse Duration (s)

 

 

 

 

DC = 0.5
DC = 0.3
DC = 0.1
DC = 0.05
DC = 0.02
DC = 0.01
Single Pulse

0.01

0.1

1

10

100

1000

0.01

0.1

1

10

100

I

D

-

D

rain Current (A)

V

DS

- Drain-to-Source Voltage (V)

DC

1s

100 ms

10 ms

1 ms

Operation in this range is 
limited by R

DS(on)

R

șJA

= 70°C/W

Single Pulse

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MCP87090

DS20002332B-page 6

 2013 Microchip Technology Inc.

FIGURE 2-13:

Maximum Drain Current vs. 

Temperature 3.3x3.3-PDFN (MCP87090T-U/LC).

FIGURE 2-14:

Transient Thermal 

Impedance 3.3x3.3-PDFN (MCP87090T-U/LC).

FIGURE 2-15:

Single-Pulse Unclamped 

Inductive Switching.

FIGURE 2-16:

Drain-to-Source Breakdown 

Voltage vs. Temperature.

0

10

20

30

40

50

60

70

80

0

25

50

75

100

125

150

I

D

-

D

rain Current (A)

T

C

- Case Temperature (

Û&

V

GS

= 4.5V

V

GS

= 10V

0.001

0.01

0.1

1

0.001

0.1

10

1000

Z

ș

JA

-

N

ormalized Thermal 

Impedance

t

1

- Pulse Duration (s)

 

 

 

 

DC = 0.5
DC = 0.3
DC = 0.1
DC = 0.05
DC = 0.02
DC = 0.01
Single Pulse

10

100

a

lanche Current (A)

T

C

= +25°C

1

0.01

0.1

1

10

100

I

AS

-A

v

a

t

AV

- Avalanche Time (ms)

T

C

= +150°C

27

28

29

30

31

B

reakdow

n V

o

ltage (V)

I

D

= 250 μA

25

26

-60 -40 -20

0

20

40

60

80 100 120 140 160

V

BR(DSS) 

-

B

T

- Case Temperature(°C)

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 2013 Microchip Technology Inc.

DS20002332B-page 7

MCP87090

3.0

PIN DESCRIPTIONS

The descriptions of the pins are listed in 

Table 3-1

TABLE 3-1:

PINOUT DESCRIPTION FOR THE MCP87090

   

 

MCP87090

Pin Type

Function

5x6 PDFN, 

3.3 x 3.3 PDFN

1, 2, 3

S

Source pin

4

G

Gate pin

5, 6, 7, 8

D

Drain pin, including exposed thermal pad

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MCP87090

DS20002332B-page 8

 2013 Microchip Technology Inc.

4.0

PACKAGING INFORMATION

4.1

Package Marking Information*

PIN 1

NNN

PIN 1

8-Lead PDFN (5x6x1.0 mm)

Example

Note

:

In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.

*RoHS compliant using EU-RoHS exemption: 7(a) - Lead in high-melting-temperature-type sol

ders

(i.e. lead-based alloys containing 85% by weight or more lead) can be found on the outer

packaging for this package.

Legend:

XX...X

Customer-specific information

Y

Year code (last digit of calendar year)

YY

Year code (last 2 digits of calendar year)

WW

Week code (week of January 1 is week ‘01’)

NNN

Alphanumeric traceability code

  

Pb-free JEDEC designator for Matte Tin (Sn)

*

This package is Pb-free. The Pb-free JEDEC designator (     )
can be found on the outer packaging for this package.

3

e

87090

U/MF ^^

1232

256

3

e

3

e

090

U

1232

256

8-Lead PDFN (3.3x3.3x1.0 mm)

Example

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DS20002332B-page 9

MCP87090

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MCP87090

DS20002332B-page 10

 2013 Microchip Technology Inc.

Maker
Microchip Technology Inc.
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