MCP87050 Data Sheet

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 2012 Microchip Technology Inc.

DS22308B-page 1

MCP87050

Features:

• Low Drain-to-Source On Resistance (R

DS(ON)

)

• Low Total Gate Charge (Q

G

) and Gate-to-Drain 

Charge (Q

GD

)

• Low Series Gate Resistance (R

G

)

• Fast  Switching
• Capable of Short Dead-Time Operation
• RoHS Compliant

Applications

• Point-of-Load DC-DC Converters
• High Efficiency Power Management in Servers, 

Networking, and Automotive Applications

Description

The MCP87050 is an N-Channel power MOSFET in a
popular PDFN 5 mm x 6 mm package. Advanced
packaging and silicon processing technologies allow
the MCP87050 to achieve a low Q

G

 for a given R

DS(ON)

value, resulting in a low Figure of Merit (FOM).
Combined with low R

G

, the low Figure of Merit of the

MCP87050 allows high efficiency power conversion
with reduced switching and conduction losses.

Package Type

Product Summary Table: 

Unless otherwise indicated, T

A

 = +25˚C

Parameters

Sym

Min

Typ

Max

Units Conditions

Operating Characteristics

Drain-to-Source Breakdown Voltage

BV

DSS

25

V

V

GS 

= 0V, I

= 250 µA

Gate-to-Source Threshold Voltage

V

GS(TH)

1

1.3

1.6

V

V

DS

 = V

GS

, I

= 250 µA

Drain-to-Source On Resistance

R

DS(ON)

5.0

6.0

mΩ

V

GS 

= 4.5V, I

D

 = 20A

4.2

5.0

mΩ

V

GS 

= 10V, I

= 20A

Total Gate Charge

Q

G

12.5

15

nC

V

DS

 = 12.5V, I

D

 = 20A, V

GS 

= 4.5V

Gate-to-Drain Charge

Q

GD

4.7

nC

V

DS

 = 12.5V, I

D

 = 20A

Series Gate Resistance

R

G

1.1

Thermal Characteristics

Thermal Resistance Junction-to-X

R

θJX

56

˚C/W

Note 1

Thermal Resistance Junction-to-Case

R

θJC

1.9

˚C/W

Note 2

Note 1:

R

θJX 

is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of 

2 oz. copper.  This characteristic is dependent on user’s board design. 

2:

R

θJC

 is determined using JEDEC 51-14 Method.  This characteristic is determined by design.

        

S

G

S

S

D

D

D

D

1

2

3

4

5

6

7

8

PDFN 5 x 6

High-Speed N-Channel Power MOSFET

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MCP87050

DS22308B-page 2

 2012 Microchip Technology Inc.

1.0

ELECTRICAL 
CHARACTERISTICS

Absolute Maximum Ratings †

V

DS

.......................................................................+25V

V

GS

........................................................... +10.0V / -8V

I

D, 

Continuous ................................. 100A, T

C

 = +25˚C

P

D

..................................................... 2.2W, T

A

 = +25˚C

T

J

, T

STG

.............................................. -55˚C to +150˚C

E

AS

 Avalanche Energy ..................................... 162 mJ

I

D

= 18A,  L = 1 mH,  R

G

= 25Ω

† Notice:

  Stresses above those listed under

“Maximum Ratings” may cause permanent damage to
the device.  This is a stress rating only and functional
operation of the device at those or any other conditions
above those indicated in the operational sections of this
specification is not intended.  Exposure to maximum
rating conditions for extended periods may affect
device reliability.

DC ELECTRICAL CHARACTERISTICS

Electrical Characteristics:

 Unless otherwise indicated, T

A

 = +25°C

Parameters

Sym

Min

Typ

Max

Units Conditions

Static Characteristics
Drain-to-Source 
Breakdown Voltage

B

VDSS

25

V

V

GS

 = 0V, I

D

 = 250 µA

Drain-to-Source Leakage Current 

I

DSS

1

µA

V

GS

 = 0V, V

DS

 = 20V

Gate-to-Source Leakage Current

I

GSS

100

nA

V

DS

 = 0V, V

GS

 = 10V/-8V

Gate-to-Source Threshold Voltage

V

GS(TH)

1

1.3

1.6

V

V

DS

 = V

GS

, I

D

 = 250 µA

Drain-to-Source On Resistance

R

DS(ON)

5

6.0

m

V

GS

 = 4.5V, I

D

 = 20A

4.2

5

m

V

GS

 = 10V, I

D

 = 20A

Transconductance

g

fs

101

S

V

DS

 = 12.5V, I

D

 = 20A

Dynamic Characteristics
Input Capacitance

C

ISS

1040

pF

V

GS

 = 0V, V

DS

 = 12.5V, f = 1 MHz

Output Capacitance

C

OSS

490

pF

V

GS

 = 0V, V

DS

 = 12.5V, f = 1 MHz

Reverse Transfer Capacitance

C

RSS

140

pF

V

GS

 = 0V, V

DS

 = 12.5V, f = 1 MHz

Total Gate Charge

Q

G

12.5

15

nC

V

DS

 = 12.5V, I

D

 = 20A, V

GS 

= 4.5V

Gate-to-Drain Charge

Q

GD

4.7

nC

V

DS

 = 12.5V, I

D

 = 20A

Gate-to-Source Charge

Q

GS

1.9

nC

V

DS

 = 12.5V, I

D

 = 20A

Gate Charge at V

GS(TH)

Q

G(TH)

1.4

nC

V

DS

 = 12.5V, I

D

 = 20A

Output Charge

Q

OSS

9.5

nC

V

DS

 = 12.5V, V

GS

 = 0

Turn-On Delay Time

t

d(on)

5

ns

V

DS

 = 12.5V, V

GS

 = 4.5V, 

I

D

 = 20A, R

G

 = 2

Rise Time

t

r

18

ns

V

DS

 = 12.5V, V

GS

 = 4.5V, 

I

D

 = 20A, R

G

 = 2

Turn-Off Delay Time

t

d(off)

11

ns

V

DS

 = 12.5V, V

GS

 = 4.5V, 

I

D

 = 20A, R

G

 = 2

Fall Time

t

f

5

ns

V

DS

 = 12.5V, V

GS

 = 4.5V, 

I

D

 = 20A, R

G

 = 2

Series Gate Resistance

R

G

1.1

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 2012 Microchip Technology Inc.

DS22308B-page 3

MCP87050

Diode Characteristics
Diode Forward Voltage

V

FD

0.8

1

V

I

S

 = 20A, V

GS

 = 0V

Reverse Recovery Charge

Q

RR

20

nC

I

S

 = 20A, di/dt = 300 A/µs

Reverse Recovery Time

t

rr

16

ns

I

S

 = 20A, di/dt = 300 A/µs

Avalanche Characteristics
Avalanche Energy

E

AS

50

mJ

I

D

 = 10A, L = 1 mH, 

R

G

 = 25

TEMPERATURE CHARACTERISTICS

Electrical Characteristics: Unless otherwise indicated, T

A

 = +25°C

Parameters

Sym

Min

Typ

Max

Units

Conditions

Temperature Ranges
Operating Junction Temperature Range

T

J

-55

150

°C

Storage Temperature Range

T

A

-55

150

°C

Package Thermal Resistances
Thermal Resistance Junction-to-X, 8L 5x6-PDFN

R

θJX

56

°C/W

Note 1

Thermal Resistance Junction-to-Case, 8L 5x6-PDFN

R

θJC

1.9

°C/W

Note 2

Note 1:

R

θJX 

is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of 

2 oz. copper.  This characteristic is dependent on user’s board design. 

2:

R

θJC

 is determined using JEDEC 51-14 Method.  This characteristic is determined by design.

DC ELECTRICAL CHARACTERISTICS (CONTINUED)

Electrical Characteristics:

 Unless otherwise indicated, T

A

 = +25°C

Parameters

Sym

Min

Typ

Max

Units Conditions

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MCP87050

DS22308B-page 4

 2012 Microchip Technology Inc.

2.0

TYPICAL PERFORMANCE CURVES

Note:

 Unless otherwise indicated, T

A

 = +25°C.

FIGURE 2-1:

Typical Output 

Characteristics.

FIGURE 2-2:

Typical Transfer 

Characteristics.

FIGURE 2-3:

On Resistance vs. Gate-to-

Source Voltage.

FIGURE 2-4:

Normalized On Resistance 

vs. Temperature.

FIGURE 2-5:

Gate-to-Source Voltage vs. 

Gate Charge.

FIGURE 2-6:

Capacitance vs. Drain-to-

Source Voltage.

Note:

The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

0

10

20

30

40

50

60

70

80

0.0

0.5

1.0

1.5

2.0

V

DS

- Drain to Source Voltage (V)

V

GS

= 2.5V

V

GS

= 3V

V

GS

= 10V

V

GS

= 4.5V

I

D

 - D

rai

n C

u

rr

e

n

t (A

)

V

DS

 - Drain-to-Source Voltage (V)

10 

20 

30 

40 

50 

60 

70 

80 

1.25 1.5 1.75  2  2.25 2.5 2.75  3 

I

D

 - 

Drain Current 

(A) 

V

GS

 - Gate to Source Voltage (V) 

T

C

 = 25

°C 

T

C

 = 125

°C 

V

DS

 = 5V 

T

C

 = -55

°C 

V

GS

 - Gate-to-Source Voltage (V)

I

D

 -

 Dr

a

in

 Cu

rr

e

n

(A

)

10 

11 

12 

0 2 4 6 8 10 

R

DS(ON)

 - 

On-State 

Resistance  

V

GS

- Gate to Source Voltage (V)

T

C

 = +25

°C 

T

C

 = +125

°C 

I

D

 = 20A 

R

DS

(O

N

)

 - 

On

-S

ta

te

 R

e

s

ist

an

ce

 (m

)

V

GS

 - Gate-to-Source Voltage (V)

0.4 

0.6 

0.8 

1.2 

1.4 

1.6 

1.8 

-60  -40  -20  0  20  40  60  80  100 120 140 160 

Normalized On-State Resistance 

T

C

- Case Temperature (

°C) 

I

D

 = 20A 

V

GS

 = 4.5V 

No

rm

a

lize

d

 On

-S

ta

te

 Res

ist

an

ce

 

0

1

2

3

4

5

6

7

8

9

10

0

5

10

15

20

25

Q

- Gate Charge (nC)

I

D

= 20A

V

DS

= 5V

V

DS

= 12.5V

V

GS

 - 

Gat

e

-t

o

-S

o

u

rc

e

 V

o

lt

a

g

e

 (V

)

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

0

5

10

15

20

V

DS 

- Drain to Source Voltage (V)

C

OSS

C

ISS

C

RSS

f =  1Mhz
V

GS

= 0V

C -

 Ca

p

a

c

it

a

n

c

e

 (

n

F

)

V

DS

 - Drain-to-Source Voltage (V)

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DS22308B-page 5

MCP87050

Note:

 Unless otherwise indicated, T

A

 = +25°C.

FIGURE 2-7:

Gate-to-Source Threshold 

Voltage vs. Temperature.

FIGURE 2-8:

Source-to-Drain Current vs. 

Source-to-Drain Voltage.

FIGURE 2-9:

Maximum Safe Operating 

Area.

FIGURE 2-10:

Maximum Drain Current vs. 

Temperature.

FIGURE 2-11:

Transient Thermal 

Impedance.

FIGURE 2-12:

Single-Pulse Unclamped 

Inductive Switching.

0.7 

0.9 

1.1 

1.3 

1.5 

1.7 

-75 -50 -25  0  25 50 75 100 

125 

150 

175 

T

- Case Temperature (

°C) 

I

D

 = 250uA 

V

o

lt

ag

e (V

)

V

GS(

T

H

)

 - G

a

te

-t

o-

S

o

urc

e

 T

h

re

s

h

o

ld

0.001 

0.01 

0.1 

10 

100 

0.0 0.2 0.4 0.6 0.8 1.0 

V

SD

 - Source to Drain Voltage (V) 

T

C

 = 25

°C 

T

C

 = 125

°C 

I

SD

 - S

o

ur

ce

-to

-D

ra

in

 C

u

rr

e

n

t (A

)

V

SD

 - Source-to-Drain Voltage (V)

0.01 

0.1 

10 

100 

1000 

0.01 0.1  1  10  100 

I

D

 - 

Drain Current 

(A)

 

V

DS

 - Drain to Source Voltage (V) 

DC 

1s 

100ms 

10ms 

1ms 

Operation in this range is 
limited by RDS(on) 

R

θJA

 = 56 

°C/W 

Single Pulse 

 

20 

40 

60 

80 

100 

120 

0 25 50 75 

100 

125 

150 

I

D

 - 

Drain Current 

(A) 

T

C

 - Case Temperature (

˚C) 

V

GS

 = 4.5V 

V

GS

 = 10V 

0.001

0.01

0.1

1

0.001

0.1

10

1000

t

1

- Pulse Duration (s)

DC = 0.5
DC = 0.3
DC = 0.1
DC = 0.05
DC = 0.02
DC = 0.01
Single Pulse

Z

JA

 -

 N

o

rm

al

ized

 T

h

e

rm

a

l

Im

pe

da

nc

e

10 

100 

0.01 0.1  1  10  100 

IAS - 

A

valanche 

Current (A)

 

tAv - Avalanche Time (ms) 

TC = 25

°C 

TC = 150

°C 

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MCP87050

DS22308B-page 6

 2012 Microchip Technology Inc.

Note:

 Unless otherwise indicated, T

A

 = +25°C.

FIGURE 2-13:

Drain-to-Source Breakdown 

Voltage vs. Temperature.

26 

27 

28 

29 

30 

31 

-60 -40 -20  0  20 40 60 80 100 

120 

140 

160 

V

BR(DSS) 

- Breakdow

n

 V

oltage (V)

 

T

- Case Temperature (

°C) 

I

D

 = 250 µA 

V

BR

(D

S

S

)

 - B

re

a

k

dow

n

 V

o

lt

ag

e (

V

)

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DS22308B-page 7

MCP87050

3.0

PIN DESCRIPTIONS

The descriptions of the pins are listed in 

Table 3-1

TABLE 3-1:

PINOUT DESCRIPTION FOR THE MCP87050

   

 

MCP87050

Pin Type

Function

5x6 PDFN

1, 2, 3

S

Source pin

4

G

Gate pin

5, 6, 7, 8

D

Drain pin, including exposed thermal pad

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MCP87050

DS22308B-page 8

 2012 Microchip Technology Inc.

4.0

PACKAGING INFORMATION

4.1

Package Marking Information*

PIN 1

NNN

PIN 1

8-Lead PDFN (5x6x1.0 mm)

Example

*RoHS compliant using EU-RoHS exemption: 7(a) - Lead in high-melting-temperature-type sol

ders

(i.e. lead-based alloys containing 85% by weight or more lead) can be found on the outer

packaging for this package.

87050

U/MF ^^

1219

256

3

e

Legend:

XX...X

Customer-specific information

Y

Year code (last digit of calendar year)

YY

Year code (last 2 digits of calendar year)

WW

Week code (week of January 1 is week ‘01’)

NNN

Alphanumeric traceability code

  

Pb-free JEDEC designator for Matte Tin (Sn)

*

This package is Pb-free. The Pb-free JEDEC designator (     )
can be found on the outer packaging for this package.

Note

:

In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.

3

e

PIN 1

NNN

PIN 1

8-Lead PDFN (5x6x1.0 mm)

Example

87050

U/MF ^^

1219

256

3

e

3

e

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DS22308B-page 9

MCP87050

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MCP87050

DS22308B-page 10

 2012 Microchip Technology Inc.

Maker
Microchip Technology Inc.
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