MCP87018 Data Sheet

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 2013 Microchip Technology Inc.

DS20002329B-page 1

MCP87018

Features:

• Low Drain-to-Source On Resistance (R

DS(ON)

)

• Low Total Gate Charge (Q

G

) and Gate-to-Drain 

Charge (Q

GD

)

• Low Series Gate Resistance (R

G

)

• Fast  Switching
• Capable of Short Dead-Time Operation
• RoHS Compliant

Applications:

• Point-of-Load DC-DC Converters
• High-Efficiency Power Management in Servers, 

Networking and Automotive Applications

Description:

The MCP87018 is an N-Channel power MOSFET in a
popular PDFN 5 mm x 6 mm package. Advanced
packaging and silicon processing technologies allow
the MCP87018 to achieve a low Q

G

 for a given R

DS(on)

value, resulting in a low Figure of Merit (FOM).
Combined with low R

G

, the low FOM of the MCP87018

allows high-efficiency power conversion with reduced
switching and conduction losses.

Package Type

Product Summary Table: 

Unless otherwise indicated, T

A

= +25°C.

Parameters

Sym.

Min.

Typ.

Max.

Units Conditions

Operating Characteristics

Drain-to-Source Breakdown Voltage

BV

DSS

25

V

V

GS

= 0V,  I

D

= 250 µA

Gate-to-Source Threshold Voltage

V

GS(TH)

1

1.3

1.6

V

V

DS

= V

GS

, I

D

= 250 µA

Drain-to-Source On Resistance

R

DS(ON)

1.8

2.2

mΩ

V

GS

= 4.5V,  I

D

= 25A

1.5

1.9

mΩ

V

GS

= 10V, I

D

= 25A

Total Gate Charge

Q

G

32.5

37

nC

V

DS

= 12.5V, I

D

= 25A, V

GS

= 4.5V

Gate-to-Drain Charge

Q

GD

13

nC

V

DS

= 12.5V, I

D

= 25A

Series Gate Resistance

R

G

1.5

Thermal Characteristics

Thermal Resistance Junction-to-X

R

θJX

55

°C/W

Note 1

Thermal Resistance Junction-to-Case

R

θJC

1.0

°C/W

Note 2

Note

1:

R

θJX 

is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1" x 1" mounting pad of 2 oz. 

copper. This characteristic is dependent on user’s board design. 

2:

R

θJC

 is determined using JEDEC 51-14 Method. This characteristic is determined by design.

        

S

G

S

S

D

D

D

D

1

2

3

4

5

6

7

8

PDFN 5 x 6

High-Speed N-Channel Power MOSFET

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MCP87018

DS20002329B-page 2

 2013 Microchip Technology Inc.

1.0

ELECTRICAL 
CHARACTERISTICS

Absolute Maximum Ratings †

V

DS

.......................................................................+25V

V

GS

........................................................... +10.0V / -8V

I

D, 

Continuous ................................. 100A, T

C

= +25°C

P

D

.....................................................2.2W, T

A

= +25°C

T

J

, T

STG

..............................................-55°C to +150°C

E

AS

 Avalanche Energy .................................. 612.5 mJ

I

D

= 35A,  L = 1 mH,  R

G

= 25Ω

† Notice:

  Stresses above those listed under

“Maximum Ratings” may cause permanent damage to
the device.  This is a stress rating only and functional
operation of the device at those or any other conditions
above those indicated in the operational sections of this
specification is not intended.  Exposure to maximum
rating conditions for extended periods may affect
device reliability.

DC ELECTRICAL CHARACTERISTICS

Electrical Characteristics:

 Unless otherwise indicated, T

A

= +25°C.

Parameters

Sym.

Min.

Typ.

Max.

Units Conditions

Static Characteristics
Drain-to-Source 
Breakdown Voltage

BV

DSS

25

V

V

GS

= 0V,  I

D

= 250 µA

Drain-to-Source Leakage Current 

I

DSS

1

µA

V

GS

= 0V,  V

DS

= 20V

Gate-to-Source Leakage Current

I

GSS

100

nA

V

DS

= 0V,  V

GS

= 10V/-8V

Gate-to-Source Threshold Voltage

V

GS(TH)

1

1.3

1.6

V

V

DS

= V

GS

, I

D

= 250 µA

Drain-to-Source On Resistance

R

DS(ON)

2.2

V

GS

= 3.3V, I

D

= 25A

1.8

2.2

m

V

GS

= 4.5V, I

D

= 25A

1.5

1.9

m

V

GS

= 10V,  I

D

= 25A

Transconductance

g

fs

162

S

V

DS

= 12.5V, I

D

= 25A

Dynamic Characteristics
Input Capacitance

C

ISS

2925

pF

V

GS

= 0V,  V

DS

= 12.5V,  f = 1 MHz

Output Capacitance

C

OSS

1305

pF

V

GS

= 0V,  V

DS

= 12.5V,  f = 1 MHz

Reverse Transfer Capacitance

C

RSS

330

pF

V

GS

= 0V,  V

DS

= 12.5V,  f = 1 MHz

Total Gate Charge

Q

G

32.5

37

nC

V

DS

= 12.5V, I

D

= 25A, 

V

GS

= 4.5V

Gate-to-Drain Charge

Q

GD

13

nC

V

DS

= 12.5V, I

D

= 25A

Gate-to-Source Charge

Q

GS

5.3

nC

V

DS

= 12.5V, I

D

= 25A

Gate Charge at V

GS(TH)

Q

G(TH)

3.8

nC

V

DS

= 12.5V, I

D

= 25A

Output Charge

Q

OSS

26

nC

V

DS

= 12.5V, V

GS

= 0

Turn-On Delay Time

t

d(on)

6.53

ns

V

DS

= 12.5V, V

GS

= 4.5V, 

I

D

= 25A, R

G

= 2

Rise Time

t

r

28.3

ns

V

DS

= 12.5V, V

GS

= 4.5V, 

I

D

= 25A, R

G

= 2

Turn-Off Delay Time

t

d(off)

26.35

ns

V

DS

= 12.5V, V

GS

= 4.5V, 

I

D

= 25A, R

G

= 2

Fall Time

t

f

28.05

ns

V

DS

= 12.5V, V

GS

= 4.5V, 

I

D

= 25A, R

G

= 2

Series Gate Resistance

R

G

1.5

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DS20002329B-page 3

MCP87018

Diode Characteristics
Diode Forward Voltage

V

FD

0.8

1

V

I

S

= 25A, V

GS

= 0V

Reverse Recovery Charge

Q

RR

47

nC

I

S

= 25A, di/dt = 300 A/µs

Reverse Recovery Time

t

rr

28

ns

I

S

= 25A, di/dt = 300 A/µs

Avalanche Characteristics
Avalanche Energy

E

AS

200

mJ

I

D

= 20A, L = 1 mH, R

G

= 25

TEMPERATURE CHARACTERISTICS

Electrical Characteristics:

 Unless otherwise indicated, T

A

= +25°C.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Temperature Ranges
Operating Junction Temperature Range

T

J

-55

150

°C

Storage Temperature Range

T

A

-55

150

°C

Package Thermal Resistances
Thermal Resistance Junction-to-X, 8L 5x6-PDFN

R

θJX

55

°C/W

Note 1

Thermal Resistance Junction-to-Case, 8L 5x6-PDFN

R

θJC

1.0

°C/W

Note 2

Note 1:

R

θJX 

is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1" x 1" mounting pad of 

2 oz. copper. This characteristic is dependent on user’s board design. 

2:

R

θJC

 is determined using JEDEC 51-14 Method. This characteristic is determined by design.

DC ELECTRICAL CHARACTERISTICS (CONTINUED)

Electrical Characteristics:

 Unless otherwise indicated, T

A

= +25°C.

Parameters

Sym.

Min.

Typ.

Max.

Units Conditions

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MCP87018

DS20002329B-page 4

 2013 Microchip Technology Inc.

2.0

TYPICAL PERFORMANCE CURVES

Note:

 Unless otherwise indicated, T

A

= +25°C.

FIGURE 2-1:

Typical Output 

Characteristics.

FIGURE 2-2:

Typical Transfer 

Characteristics.

FIGURE 2-3:

On-State Resistance vs. 

Gate-to-Source Voltage.

FIGURE 2-4:

Normalized On-State 

Resistance vs. Temperature.

FIGURE 2-5:

Gate-to-Source Voltage vs. 

Gate Charge.

FIGURE 2-6:

Capacitance vs. Drain-to-

Source Voltage.

Note:

The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

30

40

50

60

70

80

D

rain Current (A)

V

= 2 5V

V

GS

= 3V

V

GS

= 10V

V

GS

= 4.5V

0

10

20

0.0

0.2

0.4

0.6

I

D

D

V

DS

– Drain-to-Source Voltage (V)

V

GS

= 2.5V

30

40

50

60

70

80

rain Current (A)

T

C

= +25°C

T = +125°C

V

DS

= 5V

0

10

20

1

1.25

1.5

1.75

2

2.25

2.5

2.75

3

I

D

–D

V

GS

– Gate-to-Source Voltage (V)

T

C

= +125°C

T

C

= -55°C

3

4

5

6

7

8

9

10

O

n-State Resistance 

(m

Ÿ

)

I

D

= 25A

0

1

2

3

0

2

4

6

8

10

R

DS(ON)

O

V

GS

– Gate-to-Source Voltage (V)

T

C

= +25°C

T

C

= +125°C

1

1.2

1.4

1.6

1.8

m

alized On-State 

R

esistance

I

D

= 25A

V

GS

= 4.5V

0.4

0.6

0.8

-60 -40 -20

0

20

40

60

80 100 120 140 160

Nor

m

R

T

C

– Case Temperature (°C)

4

5

6

7

8

9

10

te-to-Source V

o

ltage 

(V)

I

D

= 25A

V

DS

= 5V

V

DS

= 12.5V

0

1

2

3

0

5 10 15 20 25 30 35 40 45 50 55 60 65 70

V

GS

 

–G

a

t

Q

G

– Gate Charge (nC)

2

3

4

5

6

p

acitance (nF)

C

ISS

f =  1  MHz
V

GS

= 0V

0

1

2

0

5

10

15

20

C –

C

a

p

V

DS

– Drain-to-Source Voltage (V)

C

OSS

C

RSS

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DS20002329B-page 5

MCP87018

Note:

 Unless otherwise indicated, T

A

= +25°C.

FIGURE 2-7:

Gate-to-Source Threshold 

Voltage vs. Temperature.

FIGURE 2-8:

Source-to-Drain Current vs. 

Source-to-Drain Voltage.

FIGURE 2-9:

Maximum Safe Operating 

Area.

FIGURE 2-10:

Maximum Drain Current vs. 

Temperature.

FIGURE 2-11:

Transient Thermal 

Impedance.

FIGURE 2-12:

Single-Pulse Unclamped 

Inductive Switching.

1.1

1.3

1.5

1.7

Gate-to-Source

h

old V

o

ltage 

(V)

I

D

= 250 µA

0.7

0.9

-75 -50 -25

0

25

50

75 100 125 150 175

V

GS(TH) 

Thres

h

T

C

– Case Temperature (°C)

0.1

1

10

100

c

e-to-Drain Current 

(A)

T

C

= +25°C

T

C

= +125°C

0.001

0.01

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

I

SD

S

our

c

V

SD

– Source-to-Drain Voltage (V)

1

10

100

1000

D

rain Current (A)

1s

100 ms

10 ms

1 ms

Operation in this range is 
limited by R

DS(ON)

0.01

0.1

0.01

0.1

1

10

100

I

D

D

V

DS

– Drain-to-Source Voltage (V)

DC

1s

R

șJA

= 55 °C/W

Single Pulse

40

60

80

100

120

D

rain Current (A)

V

GS

= 4.5V

V

GS

= 10V

0

20

40

0

25

50

75

100

125

150

I

D

D

T

C

– Case Temperature (˚C)

0.1

1

o

rmalized Thermal 

mpedance

DC = 0.5
DC = 0.3
DC = 0.1
DC = 0.05
DC = 0 02

0.001

0.01

0.001

0.1

10

1000

Z

ș

JA

–N

o

I

t

1

– Pulse Duration (s)

DC = 0.02
DC = 0.01
Single Pulse

10

100

anche Current 

(A)

T

C

= +25°C

T

C

= +150°C

1

0.01

0.1

1

10

100

I

AS

A

val

t

AV

– Avalanche Time (ms)

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MCP87018

DS20002329B-page 6

 2013 Microchip Technology Inc.

FIGURE 2-13:

Drain-to-Source Breakdown 

Voltage vs. Temperature.

27

28

29

30

Breakdow

n V

o

ltage 

(V)

I

D

= 250 µA

25

26

-60 -40 -20

0

20

40

60

80 100 120 140 160

V

BR(DSS)

T

C

– Case Temperature(°C)

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DS20002329B-page 7

MCP87018

3.0

PIN DESCRIPTIONS

The descriptions of the pins are listed in 

Table 3-1

.

TABLE 3-1:

PIN FUNCTION TABLE

MCP87018

5x6 PDFN

Symbol

Description

1, 2, 3

S

Source pin

4

G

Gate  pin

5, 6, 7, 8

D

Drain pin, including exposed thermal pad

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MCP87018

DS20002329B-page 8

 2013 Microchip Technology Inc.

4.0

PACKAGING INFORMATION

4.1

Package Marking Information*

PIN 1

NNN

PIN 1

8-Lead PDFN (5x6x1.0 mm)

Example

Note

:

In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.

*RoHS compliant using EU-RoHS exemption: 7(a) – Lead in high-melting-temperature-type solders
(i.e., lead-based alloys containing 85% by weight or more lead) can be found on the outer

packaging for this package.

Legend:

XX...X

Customer-specific information

Y

Year code (last digit of calendar year)

YY

Year code (last 2 digits of calendar year)

WW

Week code (week of January 1 is week ‘01’)

NNN

Alphanumeric traceability code

  

Pb-free JEDEC designator for Matte Tin (Sn)

*

This package is Pb-free. The Pb-free JEDEC designator (     )
can be found on the outer packaging for this package.

3

e

87018

U/MF ^^

1324

256

3

e

3

e

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DS20002329B-page 9

MCP87018

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MCP87018

DS20002329B-page 10

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Maker
Microchip Technology Inc.
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