2009-2012 Microchip Technology Inc.
DS22135C-page 1
MCP6L1/1R/2/4
Features
• Supply Voltage: 2.7V to 6.0V
• Rail-to-Rail Output
• Input Range Includes Ground
• Available in SOT-23-5 Package
• Gain Bandwidth Product: 2.8 MHz (typical)
• Supply Current: I
Q
= 200 µA/Amplifier (typical)
• Extended Temperature Range: -40°C to +125°C
Typical Applications
• Portable Equipment
• Photodiode Amplifier
• Analog Filters
• Data Acquisition
• Notebooks and PDAs
• Battery-Powered Systems
Design Aids
• SPICE Macro Model
• FilterLab
®
Software
• Microchip Advanced Part Selector (MAPS)
• Analog Demonstration and Evaluation Boards
• Application Notes
Typical Application
Description
The Microchip Technology Inc. MCP6L1/1R/2/4 family
of operational amplifiers (op amps) supports general-
purpose applications. Battery powered circuits benefit
from their low quiescent current, A/D converters from
their wide bandwidth and anti-aliasing filters from their
low input bias current.
This family has a 2.8 MHz Gain Bandwidth Product
(GBWP) with a low 200 µA per amplifier quiescent
current. These op amps operate on supply voltages
between 2.7V and 6.0V, with rail-to-rail output swing.
They are available in the extended temperature range.
Package Types
Low-Pass Filter
R
1
V
IN
V
OUT
R
2
18.2 k
29.4 k
MCP6L1
C
2
470 nF
C
1
1.0 µF
MCP6L1
SOT-23-5
MCP6L2
SOIC, MSOP
V
IN
+
V
SS
V
IN
-
1
2
3
5
4
V
DD
V
OUT
V
INA
+
V
INA
-
V
SS
1
2
3
4
8
7
6
5
V
OUTA
V
DD
V
OUTB
V
INB
-
V
INB
+
MCP6L4
SOIC, TSSOP
V
INA
+
V
INA
-
V
DD
1
2
3
4
14
13
12
11
V
OUTA
V
OUTD
V
IND
-
V
IND
+
V
SS
V
INB
+ 5
10 V
INC
+
MCP6L1R
SOT-23-5
V
IN
+
V
DD
V
IN
-
1
2
3
5
4
V
SS
V
OUT
V
INB
- 6
9 V
INC
-
V
OUTB
7
8 V
OUTC
MCP6L1
SOIC, MSOP
V
IN
+
V
IN
-
V
SS
1
2
3
4
8
7
6
5
NC
NC
V
DD
V
OUT
NC
2.8 MHz, 200 µA Op Amps
MCP6L1/1R/2/4
DS22135C-page 2
2009-2012 Microchip Technology Inc.
NOTES:
2009-2012 Microchip Technology Inc.
DS22135C-page 3
MCP6L1/1R/2/4
1.0
ELECTRICAL
CHARACTERISTICS
1.1
Absolute Maximum Ratings †
V
DD
– V
SS
.......................................................................7.0V
Current at Input Pins ....................................................±2 mA
Analog Inputs (V
IN
+, V
IN
-) †† ........ V
SS
– 1.0V to V
DD
+ 1.0V
All Inputs and Outputs ................... V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input voltage ...................................... |V
DD
– V
SS
|
Output Short Circuit Current ................................ Continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature ...................................-65°C to +150°C
Max. Junction Temperature ........................................ +150°C
ESD Protection on All Pins (HBM, MM)
3 kV, 200V
†
Notice: Stresses above those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at those, or any other conditions above those indi-
cated in the operational listings of this specification, is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
†† See Section 4.1.2 “Input Voltage and Current Limits”.
1.2
Specifications
TABLE 1-1:
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C, V
DD
= 5.0V, V
SS
= GND, V
CM
= V
SS
, V
OUT
V
DD
/2,
V
L
= V
DD
/2, and R
L
= 10 k
to V
L
(refer to
Figure 1-1
).
Parameters
Sym
Min
(
Note 1
)
Typ
Max
(
Note 1
)
Units
Conditions
Input Offset
Input Offset Voltage
V
OS
-3
±1
+3
mV
Input Offset Voltage Drift
V
OS
/
T
A
—
±2.5
—
µV/°C T
A
= -40°C to+125°C
Power Supply Rejection Ratio
PSRR
—
90
—
dB
Input Current and Impedance
Input Bias Current
I
B
—
1
—
pA
Across Temperature
I
B
—
20
—
pA
T
A
= +85°C
Across Temperature
I
B
—
500
—
pA
T
A
= +125°C
Input Offset Current
I
OS
—
±1
—
pA
Common-Mode Input Impedance
Z
CM
—
10
13
||5
—
||pF
Differential Input Impedance
Z
DIFF
—
10
13
||2
—
||pF
Common-Mode
Common-Mode Input Voltage Range
V
CMR
-0.3
—
3.7
V
Common-Mode Rejection Ratio
CMRR
—
90
—
dB
V
CM
= -0.3V to 3.7V
Open-Loop Gain
DC Open-Loop Gain (large signal)
A
OL
—
105
—
dB
V
OUT
= 0.2V to 4.8V
Output
Maximum Output Voltage Swing
V
OL
—
—
0.030
V
G = +2, 0.5V Input Overdrive
V
OH
4.960
—
—
V
G = +2, 0.5V Input Overdrive
Output Short Circuit Current
I
SC
—
±20
—
mA
Power Supply
Supply Voltage
V
DD
2.7
—
6.0
V
Quiescent Current per Amplifier
I
Q
70
200
330
µA
I
O
= 0
Note 1:
For design guidance only; not tested.
MCP6L1/1R/2/4
DS22135C-page 4
2009-2012 Microchip Technology Inc.
1.3
Test Circuit
The circuit used for most DC and AC tests is shown in
Figure 1-1
. This circuit can independently set V
CM
and
V
OUT
; see
Equation 1-1
. Note that V
CM
is not the cir-
cuit’s common-mode voltage ((V
P
+ V
M
)/2) and that
V
OST
includes V
OS,
plus the effects (on the input offset
error, V
OST
) of temperature, CMRR, PSRR and A
OL
.
EQUATION 1-1:
FIGURE 1-1:
AC and DC Test Circuit for
Most Specifications.
TABLE 1-2:
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, T
A
= 25°C, V
DD
= +5.0V, V
SS
= GND, V
CM
= V
SS
, V
OUT
V
DD
/2,
V
L
= V
DD
/2, R
L
= 10 k
to V
L
and C
L
= 60 pF (refer to
Figure 1-1
).
Parameters
Sym
Min
Typ
Max
Units
Conditions
AC Response
Gain Bandwidth Product
GBWP
—
2.8
—
MHz
Phase Margin
PM
—
50
—
°
(degree)
G = +1
Slew Rate
SR
—
2.3
—
V/µs
Noise
Input Noise Voltage
E
ni
—
7
—
µV
P-P
f = 0.1 Hz to 10 Hz
Input Noise Voltage Density
e
ni
—
21
—
nV/
Hz f = 10 kHz
Input Noise Current Density
i
ni
—
0.6
—
fA/
Hz f = 1 kHz
TABLE 1-3:
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, all limits are specified for: V
DD
= +2.7V to +6.0V, V
SS
= GND.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
T
A
-40
—
+125
°C
Operating Temperature Range
T
A
-40
—
+125
°C
(
Note 1
)
Storage Temperature Range
T
A
-65
—
+150
°C
Thermal Package Resistances
Thermal Resistance, 5L-SOT-23
JA
—
220.7
—
°C/W
Thermal Resistance, 8L-MSOP
JA
—
211
—
°C/W
Thermal Resistance, 8L-SOIC (150 mil)
JA
—
149.5
—
°C/W
Thermal Resistance, 14L-SOIC
JA
—
95.3
—
°C/W
Thermal Resistance, 14L-TSSOP
JA
—
100
—
°C/W
Note 1:
Operation must not cause T
J
to exceed Maximum Junction Temperature specification (150°C).
G
DM
R
F
R
G
=
V
CM
V
P
V
DD
2
+
2
=
V
OUT
V
DD
2
V
P
V
M
–
V
OST
1 G
DM
+
+
+
=
Where:
G
DM
= Differential-Mode Gain
(V/V)
V
CM
= Op Amp’s Common-Mode
Input Voltage
(V)
V
OST
= Op Amp’s Total Input Offset
Voltage
(mV)
V
OST
V
IN–
V
IN+
–
=
V
DD
MCP6LX
R
G
R
F
V
OUT
V
M
C
B2
C
L
R
L
V
L
C
B1
100 k
100 k
R
G
R
F
V
DD
/2
V
P
100 k
100 k
60 pF
10 k
1 µF
100 nF
V
IN-
V
IN+
C
F
6.8 pF
C
F
6.8 pF
2009-2012 Microchip Technology Inc.
DS22135C-page 5
MCP6L1/1R/2/4
2.0
TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, T
A
= +25°C, V
DD
= 5.0V, V
SS
= GND, V
CM
= V
SS
, V
OUT
= V
DD
/2, V
L
= V
DD
/2,
R
L
= 10 k
to V
L
and C
L
= 60 pF.
FIGURE 2-1:
Input Offset Voltage vs.
Common-Mode Input Voltage at V
DD
= 2.7V.
FIGURE 2-2:
Input Offset Voltage vs.
Common-Mode Input Voltage at V
DD
= 5.5V.
FIGURE 2-3:
Input Offset Voltage vs.
Ambient Temperature.
FIGURE 2-4:
Input Common-Mode Range
Voltage vs. Ambient Temperature.
FIGURE 2-5:
CMRR, PSRR vs. Ambient
Temperature.
FIGURE 2-6:
CMRR, PSRR vs.
Frequency.
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Common Mode Input Voltage (V)
Input
O
ffs
e
t V
o
lt
a
g
e
(mV
)
Representative Part
V
DD
= 2.7V
-40°C
+25°C
+85°C
+125°
C
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-0
.5
0.
0
0.
5
1.
0
1.
5
2.
0
2.
5
3.
0
3.
5
4.
0
4.
5
5.
0
5.
5
Common Mode Input Voltage (V)
Input
O
ffs
e
t
V
o
lt
ag
e
(
µ
V
)
Representative Part
V
DD
= 5.5V
-40°C
+25°C
+85°C
+125°
C
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50
-25
0
25
50
75
100
125
Ambient Temperature (°C)
Inpu
t O
ffs
et V
o
lt
age
(m
V
)
Representative Part
V
DD
= 5.5V
V
DD
= 2.7V
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
-50 -25
0
25
50
75 100 125
Ambient Temperature (°C)
C
o
mm
on Mod
e
R
ang
e;
V
CM
RL
–
V
SS
(V
)
1.0
1.1
1.2
1.3
1.4
1.5
1.6
C
o
mm
on Mod
e
R
ang
e;
V
DD
– V
CM
RH
(V
)
V
DD
– V
CMRH
V
CMRL
– V
SS
One Wafer Lot
70
75
80
85
90
95
100
-50
-25
0
25
50
75
100
125
Ambient Temperature (°C)
CM
RR,
P
S
RR
(d
B)
PSRR (V
CM
= V
SS
)
CMRR (V
CMRL
to V
CMRH
)
20
30
40
50
60
70
80
90
100
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
Frequency (Hz)
CM
RR, PS
RR (
d
B
)
PSRR+
CMRR
PSRR–
1
100
1k
10k
100k
10
MCP6L1/1R/2/4
DS22135C-page 6
2009-2012 Microchip Technology Inc.
Note: Unless otherwise indicated, T
A
= +25°C, V
DD
= +5.0V, V
SS
= GND, V
CM
= V
SS
, V
OUT
= V
DD
/2, V
L
= V
DD
/2,
R
L
= 10 k
to V
L
and C
L
= 60 pF.
FIGURE 2-7:
Measured Input Current vs.
Input Voltage (below V
SS
).
FIGURE 2-8:
Open-Loop Gain, Phase vs.
Frequency.
FIGURE 2-9:
Input Noise Voltage Density
vs. Frequency.
FIGURE 2-10:
The MCP6L1/1R/2/4 Show
No Phase Reversal.
FIGURE 2-11:
Quiescent Current vs.
Power Supply Voltage.
FIGURE 2-12:
Output Short Circuit Current
vs. Power Supply Voltage.
1.E-12
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0
Input Voltage (V)
In
p
u
t C
u
rr
en
t M
a
g
n
itu
d
e
(
A
)
+125°C
+85°C
+25°C
-40°C
10m
1m
100µ
10µ
1µ
100n
10n
1n
100p
10p
1p
-20
0
20
40
60
80
100
120
1.E-
01
1.E+
00
1.E+
01
1.E+
02
1.E+
03
1.E+
04
1.E+
05
1.E+
06
1.E+
07
Frequency (Hz)
Op
en
-L
o
o
p
Gain
(
d
B)
-210
-180
-150
-120
-90
-60
-30
0
Op
en-L
oop
P
h
ase
(°)
0.1
1
10
1k 10k 100k
10M
Phase
Gain
100
1M
10
100
1,000
1.E-01 1.E+0
0
1.E+0
1
1.E+0
2
1.E+0
3
1.E+0
4
1.E+0
5
Frequency (Hz)
Input Noise Voltage Density
(nV/Hz)
0.1
10
1
100
10k
1k
100k
-1
0
1
2
3
4
5
6
0.E+00
5.E-06
1.E-05
2.E-05
2.E-05
3.E-05
Time (5 µs/div)
In
p
u
t,
Ou
tp
u
t V
o
lt
ag
e
s (V
)
G = +2 V/V
V
IN
V
OUT
0
50
100
150
200
250
300
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power Supply Voltage (V)
Q
u
iesce
n
t C
u
rr
en
t
pe
r a
m
pl
if
ie
r
(µ
A
)
-40°C
+25°C
+85°C
+125°C
-40
-30
-20
-10
0
10
20
30
40
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power Supply Voltage (V)
S
hor
t C
ir
cu
it C
u
rr
e
n
t (
m
A
)
-40°C
+25°C
+85°C
+125°C
2009-2012 Microchip Technology Inc.
DS22135C-page 7
MCP6L1/1R/2/4
Note: Unless otherwise indicated, T
A
= +25°C, V
DD
= +5.0V, V
SS
= GND, V
CM
= V
SS
, V
OUT
= V
DD
/2, V
L
= V
DD
/2,
R
L
= 10 k
to V
L
and C
L
= 60 pF.
FIGURE 2-13:
Ratio of Output Voltage
Headroom to Output Current vs. Output Current.
FIGURE 2-14:
Small Signal, Non-Inverting
Pulse Response.
FIGURE 2-15:
Large Signal, Non-Inverting
Pulse Response.
FIGURE 2-16:
Slew Rate vs. Ambient
Temperature.
FIGURE 2-17:
Output Voltage Swing vs.
Frequency.
0
10
20
30
40
50
60
70
1.E-04
1.E-03
1.E-02
Output Current Magnitude (A)
R
at
io o
f O
u
tp
ut
H
e
adr
oom
to
Out
p
ut
C
u
rr
en
t (
m
V
/m
A
)
100µ
10m
1m
V
DD
– V
OH
I
OUT
V
OL
– V
SS
-I
OUT
2.42
2.44
2.46
2.48
2.50
2.52
2.54
2.56
2.58
0.E+00
1.E-06
2.E-06
3.E-06
4.E-06
5.E-06
6.E-06
7.E-06
8.E-06
9.E-06
1.E-05
Time (1 µs/div)
Ou
tp
u
t V
o
lt
ag
e
(20
m
V
/d
iv)
G = +1 V/V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.E+00
1.E-06
2. E-06
3.E-06
4.E-06
5. E-06
6.E-06
7. E-06
8.E -06
9.E-06
1. E-05
Time (1 µs/div)
O
u
tput V
o
lt
ag
e
(V
)
G = +1 V/V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50
-25
0
25
50
75
100
125
Ambient Temperature (°C)
S
lew Rat
e (V
/µs
)
Rising Edge
Falling Edge
0.1
1
10
1.E+04
1.E+05
1.E+06
Frequency (Hz)
Ou
tpu
t
V
o
lt
age S
w
in
g (V
P-
P
)
V
DD
= 5.5V
10k
100k
1M
V
DD
= 2.7V
MCP6L1/1R/2/4
DS22135C-page 8
2009-2012 Microchip Technology Inc.
NOTES:
2009-2012 Microchip Technology Inc.
DS22135C-page 9
MCP6L1/1R/2/4
3.0
PIN DESCRIPTIONS
Descriptions of the pins are listed in
Table 3-1
.
TABLE 3-1:
PIN FUNCTION TABLE
3.1
Analog Outputs
The analog output pins (V
OUT
) are low-impedance
voltage sources.
3.2
Analog Inputs
The non-inverting and inverting inputs (V
IN
+, V
IN
-, …)
are high-impedance CMOS inputs with low bias
currents.
3.3
Power Supply Pins
The positive power supply (V
DD
) is 2.7V to 6.0V higher
than the negative power supply (V
SS
). For normal
operation, the other pins are between V
SS
and V
DD
.
Typically, these parts are used in a single (positive)
supply configuration. In this case, V
SS
is connected to
ground and V
DD
is connected to the supply. V
DD
will
need bypass capacitors.
MCP6L1
MCP6L1R
MCP6L2
MCP6L4
Symbol
Description
SOT-23-5
SOIC-8,
MSOP-8
SOT-23-5
SOIC-8,
MSOP-8
SOIC-14,
TSSOP-14
1
6
1
1
1
V
OUT
, V
OUTA
Output (op amp A)
4
2
4
2
2
V
IN
-, V
INA
-
Inverting Input (op amp A)
3
3
3
3
3
V
IN
+, V
INA
+
Non-Inverting Input (op amp A)
5
7
2
8
4
V
DD
Positive Power Supply
—
—
—
5
5
V
INB
+
Non-Inverting Input (op amp B)
—
—
—
6
6
V
INB
-
Inverting Input (op amp B)
—
—
—
7
7
V
OUTB
Output (op amp B)
—
—
—
—
8
V
OUTC
Output (op amp C)
—
—
—
—
9
V
INC
-
Inverting Input (op amp C)
—
—
—
—
10
V
INC
+
Non-Inverting Input (op amp C)
2
4
5
4
11
V
SS
Negative Power Supply
—
—
—
—
12
V
IND
+
Non-Inverting Input (op amp D)
—
—
—
—
13
V
IND
-
Inverting Input (op amp D)
—
—
—
—
14
V
OUTD
Output (op amp D)
—
1, 5, 8
—
—
—
NC
No Internal Connection
MCP6L1/1R/2/4
DS22135C-page 10
2009-2012 Microchip Technology Inc.
NOTES: