2009-2011 Microchip Technology Inc.
DS22140B-page 1
MCP6L01/1R/1U/2/4
Features:
• Available in SC-70-5 and SOT-23-5 Packages
• Gain Bandwidth Product: 1 MHz (typical)
• Rail-to-Rail Input/Output
• Supply Voltage: 1.8V to 6.0V
• Supply Current: I
Q
= 85 µA/Amplifier (typical)
• Extended Temperature Range: -40°C to +125°C
• Available in Single, Dual and Quad Packages
Typical Applications:
• Portable Equipment
• Photodiode Amplifier
• Analog Filters
• Notebooks and PDAs
• Battery-Powered Systems
Design Aids:
• SPICE Macro Model
• FilterLab
®
Software
• Microchip Advanced Part Selector (MAPS)
• Analog Demonstration and Evaluation Boards
• Application Notes
Typical Application
Description:
The Microchip Technology Inc. MCP6L01/1R/1U/2/4
family of operational amplifiers (op amps) supports
general purpose applications. The combination of rail-
to-rail input and output, low quiescent current and
bandwidth fit into many applications.
This family has a 1 MHz Gain Bandwidth Product
(GBWP) and a low 85 µA per amplifier quiescent
current. These op amps operate on supply voltages
between 1.8V and 6.0V, with rail-to-rail input and output
swing. They are available in the extended temperature
range.
Package Types
Inverting Amplifier
MCP6L01
R
1
R
2
V
REF
V
IN
V
OUT
R
3
MCP6L01
SC-70-5, SOT-23-5
MCP6L02
SOIC, MSOP
V
IN
+
V
SS
V
IN
–
1
2
3
5
4
V
DD
V
OUT
V
INA
+
V
INA
–
V
SS
1
2
3
4
8
7
6
5
V
OUTA
V
DD
V
OUTB
V
INB
–
V
INB
+
MCP6L04
SOIC, TSSOP
V
INA
+
V
INA
–
V
DD
1
2
3
4
14
13
12
11
V
OUTA
V
OUTD
V
IND
–
V
IND
+
V
SS
V
INB
+ 5
10 V
INC
+
MCP6L01R
SOT-23-5
V
IN
+
V
DD
V
IN
–
1
2
3
5
4
V
SS
V
OUT
MCP6L01U
SOT-23-5
V
IN
–
V
SS
V
OUT
1
2
3
5
4
V
DD
V
IN
+
V
INB
– 6
9 V
INC
–
V
OUTB
7
8 V
OUTC
1 MHz, 85 µA Op Amps
MCP6L01/1R/1U/2/4
DS22140B-page 2
2009-2011 Microchip Technology Inc.
NOTES:
2009-2011 Microchip Technology Inc.
DS22140B-page 3
MCP6L01/1R/1U/2/4
1.0
ELECTRICAL CHARACTERISTICS
1.1
Absolute Maximum Ratings †
V
DD
– V
SS
.......................................................................7.0V
Current at Input Pins ....................................................±2 mA
Analog Inputs (V
IN
+, V
IN
–) †† ....... V
SS
– 1.0V to V
DD
+ 1.0V
All Inputs and Outputs ................... V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input Voltage ...................................... |V
DD
– V
SS
|
Output Short Circuit Current ................................ Continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature ...................................-65°C to +150°C
Max. Junction Temperature ........................................ +150°C
ESD protection on all pins (HBM, MM)
4 kV, 200V
†
Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
†† See
Section 4.1.2 “Input Voltage and Current Limits”
.
1.2
Specifications
TABLE 1-1:
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C, V
DD
= 5.0V, V
SS
= GND, V
CM
= V
SS
, V
OUT
V
DD
/2,
V
L
= V
DD
/2, and R
L
= 10 k
to V
L
(refer to
Figure 1-1
).
Parameters
Sym
Min
(
Note 1
)
Typ
Max
(
Note 1
)
Units
Conditions
Input Offset
Input Offset Voltage
V
OS
-5
±1
+5
mV
Input Offset Voltage Drift
V
OS
/
T
A
—
±2
—
µV/°C T
A
= -40°C to+125°C
Power Supply Rejection Ratio
PSRR
—
83
—
dB
Input Current and Impedance
Input Bias Current
I
B
—
2
—
pA
Across Temperature
I
B
—
80
—
pA
T
A
= +85°C
Across Temperature
I
B
—
2,000
—
pA
T
A
= +125°C
Input Offset Current
I
OS
—
±1
—
pA
Common Mode Input Impedance
Z
CM
—
10
13
||5
—
||pF
Differential Input Impedance
Z
DIFF
—
10
13
||2
—
||pF
Common Mode
Common-Mode Input Voltage Range
V
CMR
-0.3
—
5.3
V
Common-Mode Rejection Ratio
CMRR
—
78
—
dB
V
CM
= -0.3V to 5.3V
Open Loop Gain
DC Open Loop Gain (large signal)
A
OL
—
105
—
dB
V
OUT
= 0.2V to 4.8V
Output
Maximum Output Voltage Swing
V
OL
—
—
0.035
V
G = +2, 0.5V Input Overdrive
V
OH
4.965
—
—
V
G = +2, 0.5V Input Overdrive
Output Short Circuit Current
I
SC
—
±20
—
mA
Power Supply
Supply Voltage
V
DD
1.8
—
6.0
V
Quiescent Current per Amplifier
I
Q
30
85
170
µA
I
O
= 0
Note 1:
For design guidance only; not tested.
MCP6L01/1R/1U/2/4
DS22140B-page 4
2009-2011 Microchip Technology Inc.
1.3
Test Circuit
The circuit used for most DC and AC tests is shown in
Figure 1-1
. This circuit can independently set V
CM
and
V
OUT
; see
Equation 1-1
. Note that V
CM
is not the
circuit’s common mode voltage ((V
P
+ V
M
)/2), and that
V
OST
includes V
OS
plus the effects (on the input offset
error, V
OST
) of temperature, CMRR, PSRR and A
OL
.
EQUATION 1-1:
FIGURE 1-1:
AC and DC Test Circuit for
Most Specifications.
TABLE 1-2:
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, T
A
= 25°C, V
DD
= +5.0V, V
SS
= GND, V
CM
= V
SS
, V
OUT
V
DD
/2,
V
L
= V
DD
/2, R
L
= 10 k
to V
L
and C
L
= 60 pF (refer to
Figure 1-1
).
Parameters
Sym
Min
Typ
Max
Units
Conditions
AC Response
Gain Bandwidth Product
GBWP
—
1.0
—
MHz
Phase Margin
PM
—
90
—
°
G = +1
Slew Rate
SR
—
0.6
—
V/µs
Noise
Input Noise Voltage
E
ni
—
6
—
µV
P-P
f = 0.1 Hz to 10 Hz
Input Noise Voltage Density
e
ni
—
24
—
nV/
Hz f = 10 kHz
Input Noise Current Density
i
ni
—
4
—
fA/
Hz f = 1 kHz
TABLE 1-3:
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, all limits are specified for: V
DD
= +1.8V to +6.0V, V
SS
= GND.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
T
A
-40
—
+125
°C
Operating Temperature Range
T
A
-40
—
+125
°C
(
Note 1
)
Storage Temperature Range
T
A
-65
—
+150
°C
Thermal Package Resistances
Thermal Resistance, 5L-SC70
JA
—
331
—
°C/W
Thermal Resistance, 5L-SOT-23
JA
—
256
—
°C/W
Thermal Resistance, 8L-SOIC (150 mil)
JA
—
163
—
°C/W
Thermal Resistance, 8L-MSOP
JA
—
206
—
°C/W
Thermal Resistance, 14L-SOIC
JA
—
120
—
°C/W
Thermal Resistance, 14L-TSSOP
JA
—
100
—
°C/W
Note 1:
Operation must not cause T
J
to exceed Maximum Junction Temperature specification (150°C).
G
DM
R
F
R
G
=
V
CM
V
P
V
DD
2
+
2
=
V
OUT
V
DD
2
V
P
V
M
–
V
OST
1 G
DM
+
+
+
=
Where:
G
DM
= Differential Mode Gain
(V/V)
V
CM
= Op Amp’s Common Mode
Input Voltage
(V)
V
OST
= Op Amp’s Total Input Offset
Voltage
(mV)
V
OST
V
IN–
V
IN+
–
=
V
DD
MCP6L0X
R
G
R
F
V
OUT
V
M
C
B2
C
L
R
L
V
L
C
B1
100 k
100 k
R
G
R
F
V
DD
/2
V
P
100 k
100 k
60 pF
10 k
1 µF
100 nF
V
IN–
V
IN+
C
F
6.8 pF
C
F
6.8 pF
2009-2011 Microchip Technology Inc.
DS22140B-page 5
MCP6L01/1R/1U/2/4
2.0
TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, T
A
= +25°C, V
DD
= 5.0V, V
SS
= GND, V
CM
= V
SS
, V
OUT
= V
DD
/2, V
L
= V
DD
/2,
R
L
= 10 k
to V
L
and C
L
= 60 pF.
FIGURE 2-1:
Input Offset Voltage vs.
Common Mode Input Voltage at V
DD
= 1.8V.
FIGURE 2-2:
Input Offset Voltage vs.
Common Mode Input Voltage at V
DD
= 5.5V.
FIGURE 2-3:
Input Offset Voltage vs.
Output Voltage.
FIGURE 2-4:
Input Common Mode Range
Voltage vs. Ambient Temperature.
FIGURE 2-5:
CMRR, PSRR vs. Ambient
Temperature.
FIGURE 2-6:
CMRR, PSRR vs.
Frequency.
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-0
.4
-0.
2
0.
0
0.
2
0.
4
0.
6
0.
8
1.
0
1.
2
1.
4
1.
6
1.
8
2.
0
2.
2
Common Mode Input Voltage (V)
Input
O
ff
s
e
t
V
o
lt
ag
e
(mV
)
V
DD
= 1.8V
Representative Part
-40°C
+25°C
+85°C
+125°C
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-0
.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Common Mode Input Voltage (V)
Inpu
t O
ff
set
V
o
ltag
e (
m
V
)
V
DD
= 5.5V
Representative Part
-40°C
+25°C
+85°C
+125°C
-1.30
-1.20
-1.10
-1.00
-0.90
-0.80
-0.70
-0.60
-0.50
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Output Voltage (V)
Inpu
t Of
fse
t V
o
lt
age
(m
V
)
V
DD
= 1.8V
V
DD
= 5.5V
Representative Part
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
-50
-25
0
25
50
75
100
125
Ambient Temperature (°C)
Co
m
m
o
n
M
o
d
e
R
a
n
g
e
(
V
)
V
CMRH
– V
DD
V
CMRL
– V
SS
One Wafer Lot
70
75
80
85
90
95
100
-50
-25
0
25
50
75
100
125
Ambient Temperature (°C)
CM
RR,
P
S
RR
(d
B)
PSRR (V
CM
= V
SS
)
CMRR (V
CMRL
to V
CMRH
)
20
30
40
50
60
70
80
90
100
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
Frequency (Hz)
CM
RR, PS
RR (
d
B
)
PSRR+
CMRR
PSRR–
10
100
1k
10k
100k
MCP6L01/1R/1U/2/4
DS22140B-page 6
2009-2011 Microchip Technology Inc.
Note: Unless otherwise indicated, T
A
= +25°C, V
DD
= +5.0V, V
SS
= GND, V
CM
= V
SS
, V
OUT
= V
DD
/2, V
L
= V
DD
/2,
R
L
= 10 k
to V
L
and C
L
= 60 pF.
FIGURE 2-7:
Measured Input Current vs.
Input Voltage (below V
SS
).
FIGURE 2-8:
Open-Loop Gain, Phase vs.
Frequency.
FIGURE 2-9:
Input Noise Voltage Density
vs. Frequency.
FIGURE 2-10:
The MCP6L01/1R/1U/2/4
Show No Phase Reversal.
FIGURE 2-11:
Quiescent Current vs.
Power Supply Voltage.
FIGURE 2-12:
Output Short Circuit Current
vs. Power Supply Voltage.
1.E-12
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0
Input Voltage (V)
Inpu
t C
u
rr
ent
Mag
n
it
ude
(A
)
+125°C
+85°C
+25°C
-40°C
10m
1m
100µ
10µ
1µ
100n
10n
1n
100p
10p
1p
-20
0
20
40
60
80
100
120
1.E-
01
1.E+
00
1.E+
01
1.E+
02
1.E+
03
1.E+
04
1.E+
05
1.E+
06
1.E+
07
Frequency (Hz)
Op
en
-L
o
o
p
Ga
in
(
d
B
)
-210
-180
-150
-120
-90
-60
-30
0
Op
en-
Loo
p P
h
ase
(°)
0.1
1
10 100
10k 100k 1M 10M
Phase
Gain
1k
10
100
1,000
1.E-01 1.E+0
0
1.E+0
1
1.E+0
2
1.E+0
3
1.E+0
4
1.E+0
5
Frequency (Hz)
Input Noise Voltage Density
(nV/Hz)
0.1
10
1
100
10k
1k
100k
-1
0
1
2
3
4
5
6
0.E+00
1.E-05
2.E-05
3.E-05
4.E-05
5.E-05
6.E-05
7.E-05
8.E-05
9.E-05
1.E-04
Time (10 µs/div)
In
p
u
t,
Ou
tp
u
t V
o
lt
ag
e
s (V
)
G = +2 V/V
V
IN
V
OUT
0
20
40
60
80
100
120
140
160
180
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power Supply Voltage (V)
Q
u
iesce
n
t C
u
rr
en
t
pe
r a
m
pl
if
ie
r
(µ
A
)
+125°
C
+85°C
+25°C
40°C
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power Supply Voltage (V)
S
hor
t C
ircu
it C
u
rr
ent
(m
A
)
-40°C
+25°C
+85°C
+125°C
2009-2011 Microchip Technology Inc.
DS22140B-page 7
MCP6L01/1R/1U/2/4
Note: Unless otherwise indicated, T
A
= +25°C, V
DD
= +5.0V, V
SS
= GND, V
CM
= V
SS
, V
OUT
= V
DD
/2, V
L
= V
DD
/2,
R
L
= 10 k
to V
L
and C
L
= 60 pF.
FIGURE 2-13:
Ratio of Output Voltage
Headroom to Output Current vs. Output Current.
FIGURE 2-14:
Small Signal, Noninverting
Pulse Response.
FIGURE 2-15:
Large Signal, Noninverting
Pulse Response.
FIGURE 2-16:
Slew Rate vs. Ambient
Temperature.
FIGURE 2-17:
Output Voltage Swing vs.
Frequency.
0
5
10
15
20
25
30
35
40
45
50
1.E-04
1.E-03
1.E-02
Output Current Magnitude (A)
R
at
io o
f O
u
tp
ut
H
e
adr
oom
to
Out
put
C
u
rr
en
t (
m
V
/m
A
)
100µ
10m
1m
V
DD
– V
OH
I
OUT
V
OL
– V
SS
-I
OUT
-0.08
-0.06
-0.04
-0.02
0.00
0.02
0.04
0.06
0.08
0.E+00
1.E-06
2.E-06
3.E-06
4.E-06
5.E-06
6.E-06
7.E-06
8.E-06
9.E-06
1.E-05
Time (1 µs/div)
Out
p
u
t
V
o
lt
age (20 m
V
/div
)
G = +1 V/V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.E+00
1.E-05
2.E-05
3.E-05
4.E-05
5.E-05
6.E-05
7.E-05
8.E-05
9.E-05
1.E-04
Time (10 µs/div)
Out
p
u
t V
o
lt
age
(V
)
G = +1 V/V
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-50
-25
0
25
50
75
100
125
Ambient Temperature (°C)
S
lew Rat
e (V
/µs
)
V
DD
= 5.5V
V
DD
= 1.8V
Rising Edge
Falling Edge
0.1
1
10
1.E+03
1.E+04
1.E+05
1.E+06
Frequency (Hz)
O
u
tp
ut
V
o
ltag
e S
w
ing
(V
P-P
)
V
DD
= 5.5V
1k
10k
100k
1M
V
DD
= 1.8V
MCP6L01/1R/1U/2/4
DS22140B-page 8
2009-2011 Microchip Technology Inc.
NOTES:
2009-2011 Microchip Technology Inc.
DS22140B-page 9
MCP6L01/1R/1U/2/4
3.0
PIN DESCRIPTIONS
Descriptions of the pins are listed in
Table 3-1
.
TABLE 3-1:
PIN FUNCTION TABLE
3.1
Analog Outputs
The analog output pins (V
OUT
) are low-impedance
voltage sources.
3.2
Analog Inputs
The noninverting and inverting inputs (V
IN
+, V
IN
–, …)
are high-impedance CMOS inputs with low bias
currents.
3.3
Power Supply Pins
The positive power supply (V
DD
) is 1.8V to 6.0V higher
than the negative power supply (V
SS
). For normal
operation, the other pins are between V
SS
and V
DD
.
Typically, these parts are used in a single (positive)
supply configuration. In this case, V
SS
is connected to
ground and V
DD
is connected to the supply. V
DD
will
need bypass capacitors.
MCP6L01 MCP6L01R MCP6L01U MCP6L02 MCP6L04
Symbol
Description
SC-70-5,
SOT-23-5
SOT-23-5
SOT-23-5
SOIC-8,
MSOP-8
SOIC-14,
TSSOP-14
1
1
4
1
1
V
OUT
, V
OUTA
Output (op amp A)
4
4
3
2
2
V
IN
–, V
INA
–
Inverting Input (op amp A)
3
3
1
3
3
V
IN
+, V
INA
+
Noninverting Input (op amp A)
5
2
5
8
4
V
DD
Positive Power Supply
—
—
—
5
5
V
INB
+
Noninverting Input (op amp B)
—
—
—
6
6
V
INB
–
Inverting Input (op amp B)
—
—
—
7
7
V
OUTB
Output (op amp B)
—
—
—
—
8
V
OUTC
Output (op amp C)
—
—
—
—
9
V
INC
–
Inverting Input (op amp C)
—
—
—
—
10
V
INC
+
Noninverting Input (op amp C)
2
5
2
4
11
V
SS
Negative Power Supply
—
—
—
—
12
V
IND
+
Noninverting Input (op amp D)
—
—
—
—
13
V
IND
–
Inverting Input (op amp D)
—
—
—
—
14
V
OUTD
Output (op amp D)
—
—
—
—
—
NC
No Internal Connection
MCP6L01/1R/1U/2/4
DS22140B-page 10
2009-2011 Microchip Technology Inc.
NOTES: