MCP65R41 - 3 µA Comparator with Integrated Reference Voltage Data Sheet

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 2010-2011 Microchip Technology Inc.

DS22269B-page 1

MCP65R41/6

Features:

• Factory Set Reference Voltage

- Available Voltage: 1.21V and 2.4V
- Tolerance: ±1% (typical)

• Low Quiescent Current: 2.5 µA (typical)
• Propagation Delay: 4 µs with 100 mV Overdrive
• Input Offset Voltage: ±3mV (typical)
• Rail-to-Rail Input: V

SS

 - 0.3V to V

DD

 + 0.3V

• Output Options:

- MCP65R41 

 Push-Pull

- MCP65R46 

Open-Drain

• Wide Supply Voltage Range: 1.8V to 5.5V
• Packages: SOT23-6

Typical Applications:

• Laptop Computers
• Mobile Phones
• Hand-held Metering Systems
• Hand-held Electronics
• RC Timers
• Alarm and Monitoring Circuits
• Window Comparators

Design Aids:

• Microchip Advanced Part Selector (MAPS)
• Analog Demonstration and Evaluation Boards

Typical Application

Description:

The Microchip Technology Inc. MCP65R41/6 family of
push-pull and open-drain output comparators are
offered with integrated reference voltages of 1.21V and
2.4V. This family provides ±1% (typical) tolerance while
consuming 2.5 µA (typical) current. These comparators
operate with a single-supply voltage as low as 1.8V to
5.5V, which makes them ideal for low cost and/or
battery powered applications.
These comparators are optimized for low-power,
single-supply applications with greater than rail-to-rail
input operation. The output limits supply current surges
and dynamic power consumption while switching. The
internal input hysteresis eliminates output switching
due to internal noise voltage, reducing current draw.
The MCP65R41 output interfaces to CMOS/TTL logic.
The open-drain output device MCP65R46 can be used
as a level-shifter from 1.6V to 10V using a pull-up
resistor. It can also be used as a wired-OR logic. 
This family of devices is available in the 6-lead SOT-23
package.

Package Types

V

OUT

V

DD

R

2

R

F

R

3

V

REF

V

PU

R

PU

*

* Pull-up resistor required for the MCP65R46 only.

R

4

Thermistor

V

REF

Over-Temperature Alert

6

4

SOT23-6

MCP65R41/6

1

2

3

-

+

5

OUT

V

SS

+IN

V

DD

V

REF

-IN

3 µA Comparator with Integrated Reference Voltage

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MCP65R41/6

DS22269B-page 2

 2010-2011 Microchip Technology Inc.

NOTES:

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 2010-2011 Microchip Technology Inc.

DS22269B-page 3

MCP65R41/6

1.0

ELECTRICAL 
CHARACTERISTICS

1.1

Absolute Maximum Ratings†

V

DD

 - V

SS

....................................................................... 7.0V

All other inputs and outputs...........V

SS

 – 0.3V to V

DD

 + 0.3V

Difference Input voltage  ......................................|V

DD

 - V

SS

|

Output Short Circuit Current  .................................... ±25 mA
Current at Input Pins  .................................................. ±2 mA
Current at Output and Supply Pins  .......................... ±50 mA
Storage temperature ................................... -65°C to +150°C
Ambient temperature with power applied.... -40°C to +125°C
Junction temperature ................................................ +150°C
ESD protection on all pins (HBM/MM)

4 kV/200V

ESD protection on MCP65R46 OUT pin (HBM/MM).............

4 kV/175V

†Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification
is not implied. Exposure to maximum rating conditions
for extended periods may affect device reliability.

DC CHARACTERISTICS

Unless otherwise indicated, all limits are specified for: V

DD

 = +1.8V to +5.5V, V

SS

 = GND, T

A

 = +25°C, V

IN+

 = 

V

DD

/2, V

IN-

 = V

SS

, R

L

= 100 k

 to V

DD

/2 (MCP65R41 only), and R

Pull-Up

 = 2.74 k

 to V

DD

 (MCP65R46 only).

Parameters

Sym

Min

Typ

Max

Units

Conditions

Power Supply
Supply Voltage

V

DD

1.8

5.5

V

Quiescent Current per Comparator

I

Q

2.5

4

µA

I

OUT

 = 0

Input
Input Voltage Range

V

CMR

V

SS

0.3

V

DD

+0.3

V

Common-Mode Rejection Ratio

V

DD

 = 5V

CMRR

55

70

dB

V

CM

 = -0.3V to 5.3V

50

65

dB

V

CM

 = 2.5V to 5.3V

55

70

dB

MCP65R41
V

CM

 = -0.3V to 2.5V

50

70

dB

MCP65R46
V

CM

 = -0.3V to 2.5V

Power Supply Rejection Ratio

PSRR

63

80

dB

V

CM

 = V

SS

Input Offset Voltage

V

OS

-10

±3

+10

mV

V

CM

 = V

SS 

(

Note 1

)

Drift with Temperature

V

OS

/

T

 ±10

µV/°C V

CM

 = V

SS

Input Hysteresis Voltage

V

HYST

1

3.3

5

mV

V

CM

 = V

SS 

(

Note 1

)

Drift with Temperature

V

HYST

/

T

 6

µV/°C V

CM

 = V

SS

Drift with Temperature

V

HYST

/

T

2

 

5

µV/°C

2

V

CM

 = V

SS

Input Bias Current

I

B

1

pA

V

CM 

=

 

V

SS

T

A

 = +85°C

I

B

50

pA

V

CM

 = V

SS

T

A

 = +125°C

I

B

5000

pA

V

CM

 = V

SS

Input Offset Current

I

OS

 

±1

pA

V

CM

=

 

V

SS

Common Mode/
Differential Input Impedance

Z

CM

/Z

DIFF

10

13

||4

||pF

Note 1:

The input offset voltage is the center (average) of the input-referred trip points. The input hysteresis is the 
difference between the input-referred trip points.

2:

Limit the output current to Absolute Maximum Rating of 30 mA.

3:

Do not short the output of the MCP65R46 comparators above V

SS

 + 10V.

4:

The low-power reference voltage pin is designed to drive small capacitive loads. See 

Section 4.5.2

.

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MCP65R41/6

DS22269B-page 4

 2010-2011 Microchip Technology Inc.

Push Pull Output
High Level Output Voltage

V

OH

V

DD

0.2

V

I

OUT

 = -2 mA, V

DD

 = 5V

Low Level Output Voltage

V

OL

V

SS

+0.2

V

I

OUT

 = 2 mA, V

DD

 = 5V

Short Circuit Current

 I

SC

±50

mA

(

Note 2

MCP65R41

 I

SC

±1.5

mA

(

Note 2

MCP65R46

Open Drain Output (MCP65R46)
Low Level Output Voltage

V

OL

V

SS

+0.2

V

I

OUT

 = 2 mA

Short Circuit Current

 I

SC

±50

mA

High-Level Output Current

I

OH

-100

nA

V

PU

= 10V

Pull-up Voltage

V

PU

1.6

10

V

Note 3

Output Pin Capacitance

 C

OUT

8

pF

Reference Voltage Output
Initial Reference Tolerance

V

TOL

-2

 ±1

+2

%

I

REF

 = 0A, 

V

REF

 = 1.21V and 2.4V

V

REF

1.185

 1.21

1.234

V

I

REF

 = 0A

2.352

 2.4

2.448

V

Reference Output Current

I

REF

±500

µA

V

TOL

 = ±2% (maximum)

Drift with Temperature (character-
ized but not production tested)

V

REF

/

T

27

100

ppm

V

REF

 = 1.21V, V

DD

 = 1.8V

22

100

ppm

V

REF

 = 1.21V, V

DD

 = 5.5V

23

100

ppm

V

REF

 = 2.4V, V

DD

 = 5.5V

Capacitive Load

C

L

200

pF

Note 4

DC CHARACTERISTICS (CONTINUED)

Unless otherwise indicated, all limits are specified for: V

DD

 = +1.8V to +5.5V, V

SS

 = GND, T

A

 = +25°C, V

IN+

 = 

V

DD

/2, V

IN-

 = V

SS

, R

L

= 100 k

 to V

DD

/2 (MCP65R41 only), and R

Pull-Up

 = 2.74 k

 to V

DD

 (MCP65R46 only).

Parameters

Sym

Min

Typ

Max

Units

Conditions

Note 1:

The input offset voltage is the center (average) of the input-referred trip points. The input hysteresis is the 
difference between the input-referred trip points.

2:

Limit the output current to Absolute Maximum Rating of 30 mA.

3:

Do not short the output of the MCP65R46 comparators above V

SS

 + 10V.

4:

The low-power reference voltage pin is designed to drive small capacitive loads. See 

Section 4.5.2

.

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DS22269B-page 5

MCP65R41/6

1.2

Test Circuit Configuration

FIGURE 1-1:

Test Circuit for the Push-Pull 

Output Comparators.

FIGURE 1-2:

Test Circuit for the Open-

Drain Comparators.

AC CHARACTERISTICS

Unless otherwise indicated, all limits are specified for: V

DD

 = +1.8V to +5.5V, V

SS

 = GND, T

A

 = +25°C, 

V

IN+

 = V

DD

/2, Step = 200 mV, Overdrive = 100 mV, R

L

= 100 k

 to V

DD

/2 (MCP65R41 only), 

R

Pull-Up

 = 2.74 k

 to V

DD

 (MCP65R46 only), and C

= 50 pF.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Rise Time

t

R

0.85

µs

 

Fall Time

t

F

0.85

µs

Propagation Delay (High-to-Low)

t

PHL

4

8.0

µs

Propagation Delay (Low-to-High)

t

PLH

4

8.0

µs

Propagation Delay Skew

t

PDS

±0.2

µs

Note 1

Maximum Toggle Frequency

f

MAX

160

kHz

V

DD

 = 1.8V

f

MAX

120

kHz

V

DD

 = 5.5V

Input Noise Voltage

E

N

200

µV

P-P

10 Hz to 100 kHz

Note 1:

Propagation Delay Skew is defined as: t

PDS

 = t

PLH

 - t

PHL

.

TEMPERATURE SPECIFICATIONS

Unless otherwise indicated, all limits are specified for: V

DD

 = +1.8V to +5.5V and V

SS

 = GND.

Parameters

Symbol

Min

Typ

Max

Units

Conditions

Temperature Ranges
Specified Temperature Range

T

A

-40

+125

°C

Operating Temperature Range

T

A

-40

+125

°C

Storage Temperature Range

T

A

-65

+150

°C

Thermal Package Resistances
Thermal Resistance, SOT23-6

JA

190.5

°C/W

V

OUT

V

DD

MCP65R41

V

IN

= V

SS

200k

200k

200k

200k

50p

V

SS

=   0V

V

OUT

V

DD

MCP65R46

V

IN

= V

SS

200k

200k

2.74k

100k

50p

V

SS

=   0V

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MCP65R41/6

DS22269B-page 6

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NOTES:

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DS22269B-page 7

MCP65R41/6

2.0

TYPICAL PERFORMANCE CURVES

Note: Unless otherwise indicated, V

DD

 = +1.8V to +5.5V, V

SS

 = GND, T

A

 = +25°C, V

IN

+ = V

DD

/2, V

IN

 = GND,

R

L

 = 100 k

 to V

DD

/2 (MCP65R41 only), R

Pull-Up

 = 2.74 k

 to V

DD

/2 (MCP65R46 only) and C

= 50 pF.

FIGURE 2-1:

Input Offset Voltage.

FIGURE 2-2:

Input Offset Voltage 

vs. Temperature.

FIGURE 2-3:

Input Offset Voltage 

vs. Common-Mode Input Voltage.

FIGURE 2-4:

Input Offset Voltage Drift.

FIGURE 2-5:

Input Offset Voltage vs. 

Supply Voltage vs. Temperature.

FIGURE 2-6:

Input Offset Voltage vs. 

Common-Mode Input Voltage.

Note:

The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

0%

10%

20%

30%

40%

50%

-10 -8

-6

-4

-2

0

2

4

6

8

10

V

OS

 (mV)

Oc

cu

rr

en

ce

s (%)

V

DD

 = 1.8V

V

CM

 = V

SS

Avg. = 1.09 mV
StDev = 1.59 mV
850 units

V

DD

 = 5.5V

V

CM

 = V

SS

Avg. = 0.61 mV
StDev = 1.48 mV
850 units

-10.0

-8.0

-6.0

-4.0

-2.0

0.0

2.0

4.0

6.0

8.0

10.0

-50

-25

0

25

50

75

100

125

Temperature (°C)

V

DD

= 1.8V

V

DD

= 5.5V

V

CM 

= V

SS

V

OS

 (mV)

-10.0

-8.0

-6.0

-4.0

-2.0

0.0

2.0

4.0

6.0

8.0

10.0

-0.3

0.0

0.3

0.6

0.9

1.2

1.5

1.8

2.1

V

CM

 (V)

V

OS

 (m

V

)

 V

DD 

= 1.8V

T

A

= +25°C

T

A

= +125°C

T

A

= +85°C

T

A

= -40°C

0%

10%

20%

30%

40%

50%

60%

-60 -48 -36 -24 -12

0

12 24 36 48 60

V

OS

 Drift (µV/°C)

Oc

cu

rr

en

ce

s (%

)

V

CM

 = V

SS

Avg. = 9.86 µV/°C
StDev = 4.97 µV/°C
850 Units
T

A

 = -40°C to +125°C

-3.0

-2.0

-1.0

0.0

1.0

2.0

3.0

1.5

2.5

3.5

4.5

5.5

V

DD

 (V)

V

OS

 (m

V

)

T

A

= -40°C to +125°C

-10.0

-7.5

-5.0

-2.5

0.0

2.5

5.0

7.5

10.0

-1.0

0.0

1.0

2.0

3.0

4.0

5.0

6.0

V

CM

 (V)

V

OS

 (m

V

)

T

= -40°C to +125°C

V

DD

 = 5.5V

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MCP65R41/6

DS22269B-page 8

 2010-2011 Microchip Technology Inc.

Note: Unless otherwise indicated, V

DD

 = +1.8V to +5.5V, V

SS

 = GND, T

A

 = +25°C, V

IN

+ = V

DD

/2, V

IN

 = GND,

R

L

 = 100 k

 to V

DD

/2 (MCP65R41 only), R

Pull-Up

 = 2.74 k

 to V

DD

/2 (MCP65R46 only) and C

= 50 pF.

FIGURE 2-7:

Input Hysteresis Voltage 

at -40°C.

FIGURE 2-8:

Input Hysteresis Voltage

at +25°C.

FIGURE 2-9:

Input Hysteresis Voltage

at +125°C.

FIGURE 2-10:

Input Hysteresis Voltage 

Drift – Linear Temperature Compensation (TC1).

FIGURE 2-11:

Input Hysteresis Voltage 

Drift – Quadratic Temperature Compensation 
(TC2).

FIGURE 2-12:

Input Hysteresis Voltage 

vs. Temperature.

0%

5%

10%

15%

20%

25%

30%

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

V

HYST

 (mV)

Oc

c

u

rr

en

ce

s (

%

)

V

DD 

= 1.8V

Avg. = 2.4 mV
StDev = 0.17 mV
850 units

V

DD 

= 5.5V

Avg. = 2.3 mV
StDev = 0.17 mV
850 units

T

= -40°C

0%

5%

10%

15%

20%

25%

30%

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

V

HYST

 (mV)

O

ccu

rr

en

ces

 (

%

)

V

DD 

= 1.8V

Avg. = 3.0 mV
StDev = 0.17 mV
850 units

V

DD 

= 5.5V

Avg. = 2.8 mV
StDev = 0.17 mV
850 units

T

= +25°C

0%

5%

10%

15%

20%

25%

30%

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

V

HYST

 (mV)

O

ccu

rr

en

ces

 (

%

)

V

DD 

= 1.8V

Avg. = 3.4 mV
StDev = 0.14 mV
850 units

V

DD 

= 5.5V

Avg. = 3.2 mV
StDev = 0.13 mV
850 units

T

= +125°C

0%

10%

20%

30%

40%

50%

60%

70%

80%

0

2

4

6

8

10 12 14 16 18 20

V

HYST

 Drift, TC1 (µV/°C)

O

ccu

rr

en

ce

s (

%

)

850 Units
T

A

 = -40°C to +125°C

V

CM

 = V

SS

V

DD

 = 5.5V

Avg. = 5.7 µV/°C
StDev = 0.50 µV/°C

V

DD

 = 1.8V

Avg. = 6.1 µV/°C
StDev = 0.55 µV/°C

0%

10%

20%

30%

-0.50

-0.25

0.00

0.25

0.50

0.75

1.00

V

HYST

 Drift, TC2 (µV/°C

2

)

Oc

cu

rr

en

ce

s (%

)

V

DD

 = 5.5V

V

CM

 = V

SS

Avg. = 10.4 µV/°C
StDev = 0.6 µV/°C

V

DD

 = 5.5V

Avg. = 0.25 µV/°C

2

StDev = 0.1 µV/°C

2

V

DD

 = 1.8V

Avg. = 0.3 µV/°C

2

StDev = 0.2 µV/°C

2

1380 Units
T

A

 = -40°C to +125°C

V

CM

 = V

SS

1.0

2.0

3.0

4.0

5.0

-50

-25

0

25

50

75

100

125

Temperature

 

(°C)

V

HY

S

T

 (m

V

)

V

DD

= 5.5V

V

DD 

= 1.8V

V

CM 

= V

SS

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/22269B-html.html
background image

 2010-2011 Microchip Technology Inc.

DS22269B-page 9

MCP65R41/6

Note: Unless otherwise indicated, V

DD

 = +1.8V to +5.5V, V

SS

 = GND, T

A

 = +25°C, V

IN

+ = V

DD

/2, V

IN

 = GND,

R

L

 = 100 k

 to V

DD

/2 (MCP65R41 only), R

Pull-Up

 = 2.74 k

 to V

DD

/2 (MCP65R46 only) and C

= 50 pF.

FIGURE 2-13:

Input Hysteresis Voltage vs. 

Common-Mode Input Voltage.

FIGURE 2-14:

Input Hysteresis Voltage vs. 

Common-Mode Input Voltage.

FIGURE 2-15:

Input Hysteresis Voltage vs. 

Supply Voltage vs. Temperature.

FIGURE 2-16:

Quiescent Current.

FIGURE 2-17:

Quiescent Current vs. 

Common-Mode Input Voltage.

FIGURE 2-18:

Quiescent Current vs. 

Common-Mode Input Voltage.

1.0

2.0

3.0

4.0

5.0

-0.3

0.0

0.3

0.6

0.9

1.2

1.5

1.8

2.1

V

CM

 (V)

V

HY

S

T

 (m

V)

 V

DD 

= 1.8V

T

= +125°C

T

= +85°C

T

= +25°C

T

= -40°C

1.0

2.0

3.0

4.0

5.0

-0.5

0.5

1.5

2.5

3.5

4.5

5.5

V

CM

 (V)

V

HY

S

T

 (m

V

)

 V

DD 

= 5.5V

T

= -40°C

T

= +25°C

T

= +85°C

T

= +125°C

1.0

2.0

3.0

4.0

5.0

1.5

2.5

3.5

4.5

5.5

V

DD

 (V)

V

H

YST

 (m

V

)

T

= -40°C

T

= +25°C

T

= +85°C

T

= +125°C

0%

10%

20%

30%

40%

50%

60%

70%

80%

90%

100%

0.0

1.0

2.0

3.0

4.0

5.0

I

Q

 (µV/V)

Oc

c

u

rr

en

ce

s (

%

)

V

DD

 = 1.8V

850 units

Temp +125°C
Avg. = 3.51 µA
StDev= 0.07 µA

Temp +85°C
Avg. = 3 µA
StDev= 0.07 µA

Temp +25°C
Avg. = 2.52 µA
StDev= 0.08 µA

Temp -40°C
Avg. = 1.93 µA
StDev= 0.08 µA

2.0

2.1

2.2

2.3

2.4

2.5

2.6

2.7

2.8

2.9

3.0

-0.5

0.0

0.5

1.0

1.5

2.0

2.5

V

CM

 (V)

I

Q

 (µ

A)

V

DD 

= 1.8V

Sweep V

IN

- ,V

IN+

 = 

Sweep V

IN+ 

,V

IN

- = V

DD

/2

Sweep V

IN

- ,V

IN+

 = V

DD

/2

2.0

2.1

2.2

2.3

2.4

2.5

2.6

2.7

2.8

2.9

3.0

-1.0

0.0

1.0

2.0

3.0

4.0

5.0

6.0

V

CM

 (V)

I

Q

 (µ

A)

V

DD 

= 5.5V

Sweep V

IN

- ,V

IN+

 = V

DD

/2

Sweep V

IN+

 ,V

IN-

 = V

DD

/2

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/22269B-html.html
background image

MCP65R41/6

DS22269B-page 10

 2010-2011 Microchip Technology Inc.

Note: Unless otherwise indicated, V

DD

 = +1.8V to +5.5V, V

SS

 = GND, T

A

 = +25°C, V

IN

+ = V

DD

/2, V

IN

 = GND,

R

L

 = 100 k

 to V

DD

/2 (MCP65R41 only), R

Pull-Up

 = 2.74 k

 to V

DD

/2 (MCP65R46 only) and C

= 50 pF.

FIGURE 2-19:

Quiescent Current vs. 

Supply Voltage vs. Temperature.

FIGURE 2-20:

Quiescent Current vs. 

Toggle Frequency.

FIGURE 2-21:

Short Circuit Current vs. 

Supply Voltage vs. Temperature.

FIGURE 2-22:

Quiescent Current vs. 

Common-Mode Input Voltage.

FIGURE 2-23:

 Quiescent Current vs. Pull- 

Up Voltage.

FIGURE 2-24:

 No Phase Reversal.

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

0.0

1.0

2.0

3.0

4.0

5.0

6.0

V

DD

 (V)

I

Q

 (µ

A)

T

= -40°C

T

= +25°C

T

= +85°C

T

= +125°C

0

2

4

6

8

10

12

14

16

18

10

100

1000

10000

100000

Toggle Frequency (Hz)

I

Q

 (µ

A)

V

DD 

= 5.5V

V

DD

 = 1.8V

10

100

1k

10k

100k

100 mV Over-Drive
V

CM

 = V

DD

/2

R

L

 = Open

0 dB Output Attenuation

-120

-80

-40

0

40

80

120

0.0

1.0

2.0

3.0

4.0

5.0

6.0

V

DD 

(V)

I

SC

 (m

A

)

T

= -40°C

T

= +85°C

T

= +25°C

T

= +125°C

T

= -40°C

T

= +85°C

T

= +25°C

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

-1.0

0.0

1.0

2.0

3.0

4.0

5.0

6.0

V

CM

 (V)

I

Q

 (m

A)

 V

DD 

= 5.5V

Sweep V

IN+ 

,V

IN

- = V

DD

/2

Sweep V

IN

- ,V

IN+

 = V

DD

/2

 MCP65R46

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10.0

0

1

2

3

4

5

6

7

8

9

10

V

PU

 (V)

I

Q

 (µA

)

V

DD

 = 2.5V

V

DD

 = 1.8V

V

DD 

= 5.5V

V

DD

 = 4.5V

V

DD

 = 3.5V

 MCP65R46

-1.0

0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

Time (3 µs/div)

V

OU

T

 (V

)

V

IN

-

V

OUT

 V

DD 

= 5.5V

V

IN

+ = V

DD

/2

Maker
Microchip Technology Inc.
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