MCP6481/MCP6482/MCP6484 Data Sheet

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 2012-2013 Microchip Technology Inc.

DS20002322C-page 1

MCP6481/2/4

Features

• Low-Input Bias Current 

- 150 pA (typical, T

A

= +125°C)

• Low Quiescent Current 

- 240 µA/amplifier (typical)

• Low-Input Offset Voltage 

- ±1.5 mV (maximum)

• Supply Voltage Range: 2.2V to 5.5V

• Rail-to-Rail Input/Output

• Gain Bandwidth Product: 4 MHz (typical)

• Slew Rate: 2.7 V/µs (typical)

• Unity Gain Stable

• No Phase Reversal

• Small Packages

- Singles in SC70-5, SOT-23-5

• Extended Temperature Range

- -40°C to +125°C

Applications

• Photodiode Amplifier

• pH Electrode Amplifier

• Low Leakage Amplifier

• Piezoelectric Transducer Amplifier

• Active Analog Filter

• Battery-Powered Signal Conditioning

Design Aids

• SPICE Macro Models 

• FilterLab

®

 Software

• MAPS (Microchip Advanced Part Selector)

• Analog Demonstration and Evaluation Boards

• Application Notes

Description

The Microchip MCP6481/2/4 family of operational
amplifiers (op amps) has low-input bias current
(150 pA, typical at 125°C) and rail-to-rail input and
output operation. This family is unity gain stable and
has a gain bandwidth product of 4 MHz (typical). These
devices operate with a single-supply voltage as low as
2.2V, while only drawing 240 µA/amplifier (typical) of
quiescent current. These features make the family of
op amps well suited for photodiode amplifier, pH
electrode amplifier, low leakage amplifier, and battery-
powered signal conditioning applications, etc.

The MCP6481/2/4 family is offered in single
(MCP6481), dual (MCP6482), quad (MCP6484)
packages. All devices are designed using an advanced
CMOS process and fully specified in extended
temperature range from -40°C to +125°C.

Related Parts

• MCP6471/2/4: 2 MHz, Low-Input Bias Current Op 

Amps

• MCP6491/2/4: 7.5 MHz, Low-Input Bias Current 

Op Amps

Package Types

5

4

1

2

3

V

DD

V

IN

+

V

SS

V

OUT

1

2

3

4

5

6

7

8

MCP6482

2x3 TDFN*

1

2

3

4

8

7

6

5

* Includes Exposed Thermal Pad (EP); see 

Table 3-1

.

EP

9

1

2

3

4

11

12

13

14

5

4

1

2

3

MCP6481

SC70, SOT-23

MCP6484

SOIC, TSSOP

MCP6482

SOIC, MSOP

V

IN

V

OUTA

V

INA

V

INA

+

V

SS

V

INB

+

V

INB

V

OUTB

V

DD

V

OUTA

V

INA

V

INA

+

V

SS

V

INB

+

V

INB

V

OUTB

V

DD

5

6

7

8

9

10

V

OUTA

V

INA

–       

V

INA

+

V

DD

V

INB

+

V

INB

V

OUTB

V

OUTC

V

OUTD

V

IND

V

INC

V

INC

+

V

IND

+

V

SS

4 MHz, Low-Input Bias Current Op Amps

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MCP6481/2/4

DS20002322C-page 2

 2012-2013 Microchip Technology Inc.

Typical Application

Photodiode Amplifier

D

1

Light

V

OUT

V

DD

R

2

C

2

I

D1

+

MCP648X

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DS20002322C-page 3

MCP6481/2/4

1.0

ELECTRICAL CHARACTERISTICS

1.1

Absolute Maximum Ratings †

V

DD

– V

SS

.................................................................................................................................... .....................................................6.5V

Current at Input Pins ................................................................................................................ ......................................................±2 mA

Analog Inputs (V

IN

+, V

IN

-)†† ............................................................................................................... .............V

SS

– 1.0V to V

DD

+ 1.0V

All Other Inputs and Outputs ...........................................................................................................................V

SS

– 0.3V to V

DD

+ 0.3V

Difference Input Voltage...........................................................................................................................................................V

DD

– V

SS

Output Short-Circuit Current ................................................................................................................ ...................................continuous

Current at Output and Supply Pins  ............................................................................................................... ..............................±55 mA

Storage Temperature ................................................................................................................ .....................................-65°C to +150°C

Maximum Junction Temperature (T

J

) ................................................................................................................ ...........................+150°C

ESD protection on all pins (HBM)

 4 kV

Note 1: See 

Section 4.1.2, Input Voltage Limits

.

† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.

1.2

Specifications

TABLE 1-1:

DC ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Unless otherwise indicated, V

DD

= +2.2V to +5.5V, V

SS

= GND, T

A

= +25°C, 

V

CM

= V

DD

/2, V

OUT

 V

DD

/2, V

L

= V

DD

/2 and R

L

= 10 k

to V

L

. (Refer to 

Figure 1-1

).

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Input Offset

Input Offset Voltage

V

OS

-1.5

+1.5

mV

V

DD

= 3.0V, V

CM

= V

DD

/4

Input Offset Drift with Temperature

V

OS

/

T

A

±2.5

µV/°C T

A

= -40°C to +125°C

Power Supply Rejection Ratio

PSRR

75

91

dB

V

CM

= V

DD

/4

Input Bias Current and Impedance

Input Bias Current

I

B

±1

pA

8

pA

T

A

= +85°C

150

350

pA

T

A

= +125°C

Input Offset Current

I

OS

±0.1

pA

Common Mode Input Impedance

Z

CM

10

13

||6

||pF

Differential Input Impedance

Z

DIFF

10

13

||6

||pF

Common Mode

Common Mode Input Voltage Range

V

CMR

V

SS

- 0.3

V

DD

+ 0.3

V

Common Mode Rejection Ratio 

CMRR

65

87

dB

V

CM

= -0.3V to 2.5V, 

V

DD

= 2.2V

70

89

dB

V

CM

= -0.3V to 5.8V, 

V

DD

= 5.5V

Open-Loop Gain

DC Open-Loop Gain (Large Signal)

A

OL

95

115

dB

0.2V < V

OUT

<(V

DD

– 0.2V)

V

DD

= 5.5V, V

CM

= V

SS

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MCP6481/2/4

DS20002322C-page 4

 2012-2013 Microchip Technology Inc.

 

Output

High-Level Output Voltage 

V

OH

2.180

2.196

V

V

DD

= 2.2V

0.5V input overdrive

5.480

5.493

V

V

DD

= 5.5V 

0.5V input overdrive

Low-Level Output Voltage 

V

OL

0.004

0.020

V

V

DD

= 2.2V 

0.5 V input overdrive

0.007

0.020

V

V

DD

= 5.5V 

0.5 V input overdrive

Output Short-Circuit Current

I

SC

±12

mA

V

DD

= 2.2V

±36

mA

V

DD

= 5.5V

Power Supply

Supply Voltage

V

DD

2.2

5.5

V

Quiescent Current per Amplifier

I

Q

100

240

400

µA

I

O

= 0,  V

CM

= V

DD

/4

TABLE 1-2:

AC ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Unless otherwise indicated, T

A

= +25°C, V

DD

= +2.2V to +5.5V, V

SS

= GND, 

V

CM

= V

DD

/2, V

OUT

 V

DD

/2, V

L

= V

DD

/2, R

L

= 10 k

to V

L

 and C

L

= 20 pF. (Refer to 

Figure 1-1

).

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

AC Response

Gain Bandwidth Product

GBWP

4

MHz

Phase Margin

PM

60

°

G = +1V/V

Slew Rate

SR

2.7

V/µs

Noise

Input Noise Voltage

E

ni

7

µVp-p

f = 0.1 Hz to 10 Hz

Input Noise Voltage Density

e

ni

23

nV/

Hz f = 1 kHz

18

nV/

Hz f = 10 kHz

Input Noise Current Density

i

ni

0.6

fA/

Hz

f = 1 kHz

TABLE 1-1:

DC ELECTRICAL SPECIFICATIONS (CONTINUED)

Electrical Characteristics: Unless otherwise indicated, V

DD

= +2.2V to +5.5V, V

SS

= GND, T

A

= +25°C, 

V

CM

= V

DD

/2, V

OUT

 V

DD

/2, V

L

= V

DD

/2 and R

L

= 10 k

to V

L

. (Refer to 

Figure 1-1

).

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

TABLE 1-3:

TEMPERATURE SPECIFICATIONS

Electrical Characteristics: Unless otherwise indicated, V

DD

= +2.2V to +5.5V and V

SS

= GND.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Temperature Ranges

Operating Temperature Range

T

A

-40

+125

°C

Note 1

Storage Temperature Range

T

A

-65

+150

°C

Thermal Package Resistances

Thermal Resistance, 5L-SC-70

JA

331

°C/W

Thermal Resistance, 5L-SOT-23

JA

256

°C/W

Thermal Resistance, 8L-2x3 TDFN

JA

52.5

°C/W

Thermal Resistance, 8L-MSOP

JA

211

°C/W

Thermal Resistance, 8L-SOIC

JA

149.5

°C/W

Thermal Resistance, 14L-SOIC

JA

95.3

°C/W

Thermal Resistance, 14L-TSSOP

JA

100

°C/W

Note 1: The internal junction temperature (T

J

) must not exceed the absolute maximum specification of +150°C.

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DS20002322C-page 5

MCP6481/2/4

1.3

Test Circuits

The circuit used for most DC and AC tests is shown in

Figure 1-1

. This circuit can independently set V

CM

 and

V

OUT

 (refer to 

Equation 1-1

). Note that V

CM

 is not the

circuit’s common mode voltage ((V

P

+ V

M

)/2), and that

V

OST

 includes V

OS

 plus the effects (on the input offset

error, V

OST

) of temperature, CMRR, PSRR and A

OL

.

EQUATION 1-1:

 

FIGURE 1-1:

AC and DC Test Circuit for 

Most Specifications.

G

DM

R

F

R

G

=

V

CM

V

P

V

DD

2

+

 2

=

V

OUT

V

DD

2

V

P

V

M

 V

OST

1

G

DM

+

+

+

=

Where:

G

DM

= Differential Mode Gain

(V/V)

V

CM

= Op Amp’s Common Mode

Input Voltage

(V)

V

OST

= Op Amp’s Total Input Offset

Voltage

(mV)

V

OST

V

IN +

V

IN

=

V

DD

R

G

R

F

V

OUT

V

M

C

B2

C

L

R

L

V

L

C

B1

100 k

100 k

R

G

R

F

V

DD

/2

V

P

100 k

100 k

20 pF

10 k

1 µF

100 nF

V

IN–

V

IN+

C

F

6.8 pF

C

F

6.8 pF

MCP648X

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MCP6481/2/4

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NOTES:

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DS20002322C-page 7

MCP6481/2/4

2.0

TYPICAL PERFORMANCE CURVES

Note: Unless otherwise indicated, T

A

= +25°C,  V

DD

= +2.2V to +5.5V, V

SS

= GND, V

CM

= V

DD

/2, V

OUT

 V

DD

/2,

V

L

= V

DD

/2, R

L

= 10 k

to V

L

 and C

L

= 20 pF.

FIGURE 2-1:

Input Offset Voltage.

FIGURE 2-2:

Input Offset Voltage Drift.

FIGURE 2-3:

Input Offset Voltage vs. 

Common Mode Input Voltage.

FIGURE 2-4:

 Input Offset Voltage vs. 

Common Mode Input Voltage.

FIGURE 2-5:

Input Offset Voltage vs. 

Output Voltage.

FIGURE 2-6:

Input Offset Voltage vs. 

Power Supply Voltage.

Note:

The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

0% 

2% 

4% 

6% 

8% 

10% 

12% 

14% 

16% 

18% 

-1200 

-1000 

-800 

-600 

-400 

-200 

200 

400 

600 

800 

1000 

1200 

Percentage of Occurrences 

 

Input Offset Voltage (µV) 

270 Samples 
V

DD

 = 3.0V 

V

CM

 = V

DD

/4 

0% 

3% 

6% 

9% 

12% 

15% 

18% 

-12 

-10 

-8 

-6 

-4 

-2 

10 

12 

Percentage of Occurrences 

 

Input Offset Voltage Drift (µV/°C) 

270 Samples 
V

DD

 = 3.0V 

V

CM

 = V

DD

/4 

T

A

 = -40

°C to +125°C 

400

-200

0

200

400

600

800

1000

u

t Offset V

o

ltage 

(µV)

+125°C
+85°C
+25°C
-40°C

-1000

-800

-600

-400

-0.5

-0.3

-0.1

0.1

0.3

0.5

0.7

0.9

1.1

1.3

1.5

1.7

1.9

2.1

2.3

2.5

2.7

Inp

u

Common Mode Input Voltage (V)

V

DD

= 2.2V

Representative Part

-400

-200

0

200

400

600

800

1000

u

t Offset V

o

ltage 

(µV)

+125°C
+85°C
+25°C
-40°C

-1000

-800

-600

400

-0.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

Inp

u

Common Mode Input Voltage (V)

V

DD

= 5.5V

Representative Part

-400

-200

0

200

400

600

800

1000

t Offset V

o

ltage 

(µV)

V

DD

= 5.5V

V

DD

= 2.2V

Representative Part

-1000

-800

-600

400

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

Inpu

t

Output Voltage (V)

-400

-200

0

200

400

600

800

1000

t Offset V

o

ltage 

(µV)

+125°C
+85°C
+25°C
-40°C

-1000

-800

-600

-400

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

Inpu

t

Power Supply Voltage (V)

Representative Part

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MCP6481/2/4

DS20002322C-page 8

 2012-2013 Microchip Technology Inc.

Note: Unless otherwise indicated, T

A

= +25°C,  V

DD

= +2.2V to +5.5V, V

SS

= GND, V

CM

= V

DD

/2, V

OUT

 V

DD

/2,

V

L

= V

DD

/2, R

L

= 10 k

to V

L

 and C

L

= 20 pF.

FIGURE 2-7:

Input Noise Voltage Density 

vs. Frequency.

FIGURE 2-8:

Input Noise Voltage Density 

vs. Common Mode Input Voltage.

FIGURE 2-9:

CMRR, PSRR vs. 

Frequency.

FIGURE 2-10:

CMRR, PSRR vs. Ambient 

Temperature.

FIGURE 2-11:

Input Bias, Offset Currents 

vs. Ambient Temperature.

FIGURE 2-12:

Input Bias Current vs. 

Common Mode Input Voltage.

100

1,000

N

oise V

o

ltage Density

 

(nV/

¥

Hz)

10

1.E-1 1.E+0 1.E+1 1.E+2 1.E+3 1.E+4 1.E+5 1.E+6

Input 

N

Frequency (Hz)

0.1        1        10     100  

1k

10k    100k     1M

10

15

20

25

30

V

o

ltage Noise Density

 

(nV/

¥

Hz)

f = 10 kHz

0

5

-0.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

Input 

Common Mode Input Voltage (V)

f   10 kHz
V

DD

= 5.5 V

20 

30 

40 

50 

60 

70 

80 

90 

100 

1.00E+01 1.00E+02 1.00E+03 1.00E+04 1.00E+05 1.00E+06 

CMRR, PSRR (dB) 

Frequency (Hz) 

Representative Part 

 10           100            1k            10k          100k          1M 

CMRR 

PSRR+ 

PSRR- 

80

85

90

95

100

105

MRR, PSRR 

(dB)

PSRR

CMRR @ V

DD

= 5.5V

@ V

= 2 2V

65

70

75

-50

-25

0

25

50

75

100

125

C

Temperature (°C)

@ V

DD

= 2.2V

1

10

100

1000

s and Offset 

Currents

(A)

Input Bias Current

V

DD

= 5.5 V

1n

100p

10p

1p

0.01

0.1

25

35

45

55

65

75

85

95

105

11

5

125

Input Bia

Ambient Temperature (°C)

Input Offset Current

0.1p

0.01p

50

100

150

200

250

u

Bias Current (pA)

T

A

= +125°C

T

A

= +85°C

V

DD

= 5.5 V

-50

0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

Inp

u

Common Mode Input Voltage (V)

A

T

A

= +25°C

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/20002322C-html.html
background image

 2012-2013 Microchip Technology Inc.

DS20002322C-page 9

MCP6481/2/4

Note: Unless otherwise indicated, T

A

= +25°C,  V

DD

= +2.2V to +5.5V, V

SS

= GND, V

CM

= V

DD

/2, V

OUT

 V

DD

/2,

V

L

= V

DD

/2, R

L

= 10 k

to V

L

 and C

L

= 20 pF.

FIGURE 2-13:

Quiescent Current vs. 

Ambient Temperature.

FIGURE 2-14:

Quiescent Current vs. 

Common Mode Input Voltage.

FIGURE 2-15:

Quiescent Current vs. 

Common Mode Input Voltage.

FIGURE 2-16:

Quiescent Current vs. 

Power Supply Voltage.

FIGURE 2-17:

Open-Loop Gain, Phase vs. 

Frequency.

FIGURE 2-18:

DC Open-Loop Gain vs. 

Ambient Temperature.

200

225

250

275

300

Q

uiescent Current

(µA/Amplifier)

V

DD

= 5.5V

V

DD

= 2.2V

150

175

200

-50

-25

0

25

50

75

100

125

Q

Ambient Temperature (°C)

V

CM

= V

DD

/4

200

225

250

275

300

325

Q

uiescent Current 

(µA/Amplifier)

150

175

200

-0.5

-0.3

-0.1

0.1

0.3

0.5

0.7

0.9

1.1

1.3

1.5

1.7

1.9

2.1

2.3

2.5

2.7

Q

Common Mode Input Voltage (V)

V

DD

= 2.2V

200

225

250

275

300

325

Q

uiescent Current 

(µA/Amplifier)

150

175

200

-0.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

Q

Common Mode Input Voltage (V)

V

DD

= 5.5V

100

150

200

250

300

350

Q

uiescent Current

(µA/Amplifier)

+125°C
+85°C
+25°C
-40°C

0

50

100

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

Q

Power Supply Voltage (V)

V

CM

= V

DD

/4

-150

-120

-90

-60

-30

0

20

40

60

80

100

120

e

n-Loop Phase 

(°)

e

n-Loop Gain (dB)

Open-Loop Gain

Open-Loop Phase

-210

-180

150

-20

0

20

1.0E+00

1.0E+01

1.0E+02

1.0E+03

1.0E+04

1.0E+05

1.0E+06

1.0E+07

Op

e

Op

e

Frequency (Hz)

1       10      100

1k     10k

100k   1M   10M

110

120

130

140

150

p

en-Loop Gain (dB)

V

DD

= 2.2V

V

DD

= 5.5V

90

100

110

-50

-25

0

25

50

75

100

125

DC O

p

Temperature (°C)

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/20002322C-html.html
background image

MCP6481/2/4

DS20002322C-page 10

 2012-2013 Microchip Technology Inc.

Note: Unless otherwise indicated, T

A

= +25°C,  V

DD

= +2.2V to +5.5V, V

SS

= GND, V

CM

= V

DD

/2, V

OUT

 V

DD

/2,

V

L

= V

DD

/2, R

L

= 10 k

to V

L

 and C

L

= 20 pF.

FIGURE 2-19:

Gain Bandwidth Product, 

Phase Margin vs. Ambient Temperature.

FIGURE 2-20:

Gain Bandwidth Product, 

Phase Margin vs. Ambient Temperature.

FIGURE 2-21:

Output Short Circuit Current 

vs. Power Supply Voltage.

FIGURE 2-22:

Output Voltage Swing vs. 

Frequency.

FIGURE 2-23:

Output Voltage Headroom 

vs. Output Current.

FIGURE 2-24:

Output Voltage Headroom 

vs. Output Current.

30

40

50

60

70

3

4

5

6

7

P

hase Margin (°)

n

 Bandw

idth Product

(MHz)

Gain Bandwidth Product

Phase Margin

0

10

20

0

1

2

-50

-25

0

25

50

75

100

125

P

Gai

n

Ambient Temperature (°C)

V

DD

= 2.2V

30

40

50

60

70

3

4

5

6

7

P

hase Margin (°)

n

 Bandw

idth Product

(MHz)

Gain Bandwidth Product

Phase Margin

0

10

20

0

1

2

-50

-25

0

25

50

75

100

125

P

Gai

n

Ambient Temperature (°C)

V

DD

= 5.5V

-20

-10

0

10

20

30

40

50

60

Short Circuit Current 

(mA)

12 °C

-40°C

+25°C
+85°C

+125°C

-60

-50

-40

-30

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

Output

Power Supply Voltage (V)

+125°C

+85°C
+25°C

-40°C

1

10

t V

o

ltage 

Sw

ing (V

P-P

)

V

DD

= 2.2V

V

DD

= 5.5V

0.1

100

1000

10000

100000

1000000

10000000

Outpu

t

Frequency (Hz)

100          1k

    10k

100k          1M          10M

1

10

100

1000

o

ltage Headroom (mV)

V

DD

- V

OH

V

OL

- V

SS

V

DD

= 2.2V 

0.1

1

0.01

0.1

1

10

Output V

o

Output Current (mA)

1

10

100

1000

o

ltage Headroom (mV)

V

DD

- V

OH

V

OL

- V

SS

V

DD

= 5.5V 

0.1

1

0.01

0.1

1

10

100

Output V

o

Output Current (mA)

Maker
Microchip Technology Inc.
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