2001-2017 Microchip Technology Inc.
DS20001685E-page 1
MCP6021/1R/2/3/4
Features
• Rail-to-Rail Input/Output
• Wide Bandwidth: 10 MHz (typical)
• Low Noise: 8.7 nV/
Hz at 10 kHz (typical)
• Low Offset Voltage:
- Industrial Temperature: ±500 µV (max.)
- Extended Temperature: ±250 µV (max.)
• Mid-Supply V
REF
: MCP6021 and MCP6023
• Low Supply Current: 1 mA (typical)
• Total Harmonic Distortion:
- 0.00053% (typical, G = 1 V/V)
• Unity Gain Stable
• Power Supply Range: 2.5V to 5.5V
• Temperature Range:
- Industrial: -40°C to +85°C
- Extended: -40°C to +125°C
Applications
• Automotive
• Multi-Pole Active Filters
• Audio Processing
• DAC Buffer
• Test Equipment
• Medical Instrumentation
Design Aids
• SPICE Macro Models
• FilterLab
®
Software
• MPLAB
®
Mindi™ Analog Simulator
• Microchip Advanced Part Selector (MAPS)
• Analog Demonstration and Evaluation Boards
• Application Notes
Typical Application
Description
The MCP6021, MCP6021R, MCP6022, MCP6023 and
MCP6024 from Microchip Technology Inc. are rail-to-
rail input and output operational amplifiers with high
performance. Key specifications include: wide band-
width (10 MHz), low noise (8.7 nV/
Hz), low input offset
voltage and low distortion (0.00053% THD+N). The
MCP6023 also offers a Chip Select pin (CS) that gives
power savings when the part is not in use.
The single MCP6021 and MCP6021R are available in
SOT-23-5 packages. The single MCP6021, single
MCP6023 and dual MCP6022 are available in 8-lead
PDIP, SOIC and TSSOP packages. The Extended
Temperature single MCP6021 is available in 8-lead
MSOP. The quad MCP6024 is offered in 14-lead PDIP,
SOIC and TSSOP packages.
The MCP6021/1R/2/3/4 family is available in Industrial
and Extended temperature ranges. It has a power
supply range of 2.5V to 5.5V.
Package Types
Photo
Detector
100 pF
5.6 pF
100 k
V
DD
/2
MCP6021
Transimpedance Amplifier
MCP6021
SOT-23-5
1
2
3
5
4
V
DD
V
IN
-
V
OUT
V
SS
V
IN
+
MCP6022
PDIP, SOIC, TSSOP
1
2
3
4
8
7
6
5
CS
V
DD
V
OUT
V
REF
NC
V
IN
-
V
IN
+
V
SS
MCP6023
PDIP, SOIC, TSSOP
1
2
3
4
8
7
6
5
V
DD
V
OUTB
V
INB
-
V
INB
+
V
OUTA
V
INA
-
V
INA
+
V
SS
MCP6024
PDIP, SOIC, TSSOP
1
2
3
4
V
OUTD
V
IND
-
V
IND
+
V
SS
V
OUTA
V
INA
-
V
INA
+
V
DD
V
INC
+
V
INC
-
V
OUTC
5
6
7
V
INB
+
V
INB
-
V
OUTB
14
13
12
11
10
9
8
MCP6021
PDIP, SOIC,
MSOP, TSSOP
1
2
3
4
8
7
6
5
NC
V
DD
V
OUT
V
REF
NC
V
IN
-
V
IN
+
V
SS
MCP6021R
SOT-23-5
1
2
3
5
4
V
SS
V
IN
-
V
OUT
V
DD
V
IN
+
Rail-to-Rail Input/Output, 10 MHz Op Amps
MCP6021/1R/2/3/4
DS20001685E-page 2
2001-2017 Microchip Technology Inc.
NOTES:
2001-2017 Microchip Technology Inc.
DS20001685E-page 3
MCP6021/1R/2/3/4
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
V
DD
– V
SS
........................................................................7.0V
Current Analog Input Pins (V
IN
+, V
IN
-)..........................±2 mA
Analog Inputs (V
IN
+, V
IN
-) ††......... V
SS
– 1.0V to V
DD
+ 1.0V
All Other Inputs and Outputs.......... V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input Voltage ...................................... |V
DD
– V
SS
|
Output Short-Circuit Current ................................ Continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature ....................................-65°C to +150°C
Maximum Junction Temperature................................. +150°C
ESD Protection on All Pins (HBM; MM)
2 kV; 200V
† Notice:
Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
††
See
Section 4.1.2, Input Voltage Limits
.
DC ELECTRICAL CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
V
DD
/2
and R
L
= 10 k
to V
DD
/2.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Input Offset
Input Offset Voltage:
Industrial Temperature Parts
V
OS
-500
—
+500
µV
V
CM
= 0V
Extended Temperature Parts
V
OS
-250
—
+250
µV
V
CM
= 0V, V
DD
= 5.0V
Extended Temperature Parts
V
OS
-2.5
—
+2.5
mV
V
CM
= 0V, V
DD
= 5.0V,
T
A
= -40°C to +125°C
Input Offset Voltage Temperature Drift
V
OS
/
T
A
—
±3.5
—
µV/°C T
A
= -40°C to +125°C
Power Supply Rejection Ratio
PSRR
74
90
—
dB
V
CM
= 0V
Input Current and Impedance
Input Bias Current:
I
B
—
1
—
pA
Industrial Temperature Parts
I
B
—
30
150
pA
T
A
= +85°C
Extended Temperature Parts
I
B
—
640
5,000
pA
T
A
= +125°C
Input Offset Current
I
OS
—
±1
—
pA
Common-Mode Input Impedance
Z
CM
—
10
13
||6
—
||pF
Differential Input Impedance
Z
DIFF
—
10
13
||3
—
||pF
Common-Mode
Common-Mode Input Range
V
CMR
V
SS
– 0.3
—
V
DD
+ 0.3
V
Common-Mode Rejection Ratio
CMRR
74
90
—
dB
V
DD
= 5V, V
CM
= -0.3V to 5.3V
CMRR
70
85
—
dB
V
DD
= 5V, V
CM
= 3.0V to 5.3V
CMRR
74
90
—
dB
V
DD
= 5V, V
CM
= -0.3V to 3.0V
Voltage Reference (MCP6021 and MCP6023 only)
V
REF
Accuracy (V
REF
– V
DD
/2)
V
REF_ACC
-50
—
+50
mV
V
REF
Temperature Drift
V
REF
/
T
A
—
±100
—
µV/°C T
A
= -40°C to +125°C
Open-Loop Gain
DC Open-Loop Gain (Large Signal)
A
OL
90
110
—
dB
V
CM
= 0V,
V
OUT
= V
SS
+ 0.3V to V
DD
– 0.3V
Output
Maximum Output Voltage Swing
V
OL
, V
OH
V
SS
+ 15
—
V
DD
– 20
mV
0.5V input overdrive
Output Short Circuit Current
I
SC
—
±30
—
mA
V
DD
= 2.5V
I
SC
—
±22
—
mA
V
DD
= 5.5V
Power Supply
Supply Voltage
V
DD
2.5
—
5.5
V
Quiescent Current per Amplifier
I
Q
0.5
1.0
1.35
mA
I
O
= 0
MCP6021/1R/2/3/4
DS20001685E-page 4
2001-2017 Microchip Technology Inc.
AC ELECTRICAL CHARACTERISTICS
MCP6023 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
V
DD
/2,
R
L
= 10 k
to V
DD
/2 and C
L
= 60 pF.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
AC Response
Gain Bandwidth Product
GBWP
—
10
—
MHz
Phase Margin
PM
—
65
—
°
G = +1 V/V
Settling Time, 0.2%
t
SETTLE
—
250
—
ns
G = +1 V/V, V
OUT
= 100 mV
p-p
Slew Rate
SR
—
7.0
—
V/µs
Total Harmonic Distortion Plus Noise
f = 1 kHz, G = +1 V/V
THD + N
—
0.00053
—
%
V
OUT
= 0.25V to 3.25V (1.75V ± 1.50V
PK
),
V
DD
= 5.0V, BW = 22 kHz
f = 1 kHz, G = +1 V/V, R
L
= 600
THD + N
—
0.00064
—
%
V
OUT
= 0.25V to 3.25V (1.75V ± 1.50V
PK
),
V
DD
= 5.0V, BW = 22 kHz
f = 1 kHz, G = +1 V/V
THD + N
—
0.0014
—
%
V
OUT
= 4V
P-P
, V
DD
= 5.0V, BW = 22 kHz
f = 1 kHz, G = +10 V/V
THD + N
—
0.0009
—
%
V
OUT
= 4V
P-P
, V
DD
= 5.0V, BW = 22 kHz
f = 1 kHz, G = +100 V/V
THD + N
—
0.005
—
%
V
OUT
= 4V
P-P
, V
DD
= 5.0V, BW = 22 kHz
Noise
Input Noise Voltage
E
ni
—
2.9
—
µVp-p
f = 0.1 Hz to 10 Hz
Input Noise Voltage Density
e
ni
—
8.7
—
nV/
Hz f = 10 kHz
Input Noise Current Density
i
ni
—
3
—
fA/
Hz f = 1 kHz
Electrical Specifications:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
V
DD
/2, R
L
= 10 k
to V
DD
/2 and C
L
= 60 pF.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
CS Low Specifications
CS Logic Threshold, Low
V
IL
V
SS
—
0.2 V
DD
V
CS Input Current, Low
I
CSL
-1.0
0.01
—
µA
CS = V
SS
CS High Specifications
CS Logic Threshold, High
V
IH
0.8 V
DD
—
V
DD
V
CS Input Current, High
I
CSH
—
0.01
2.0
µA
CS = V
DD
GND Current
I
SS
-2
-0.05
—
µA
CS = V
DD
Amplifier Output Leakage
I
O(LEAK)
—
0.01
—
µA
CS = V
DD
CS Dynamic Specifications
CS Low to Amplifier Output Turn-on Time
t
ON
—
2
10
µs
G = +1, V
IN
= V
SS
,
CS = 0.2 V
DD
to V
OUT
= 0.45 V
DD
time
CS High to Amplifier Output High-Z Time
t
OFF
—
0.01
—
µs
G = +1, V
IN
= V
SS
,
CS = 0.8 V
DD
to V
OUT
= 0.05 V
DD
time
Hysteresis
V
HYST
—
0.6
—
V
V
DD
= 5.0V, internal switch
2001-2017 Microchip Technology Inc.
DS20001685E-page 5
MCP6021/1R/2/3/4
TEMPERATURE CHARACTERISTICS
FIGURE 1-1:
Timing Diagram for the CS
Pin on the MCP6023.
1.1
Test Circuits
The test circuits used for the DC and AC tests are
shown in
Figure 1-2
and
Figure 1-3
. The bypass
capacitors are laid out according to the rules discussed
in
Section 4.7 “Supply Bypass”
.
FIGURE 1-2:
AC and DC Test Circuit for
Most Non-Inverting Gain Conditions.
FIGURE 1-3:
AC and DC Test Circuit for
Most Inverting Gain Conditions.
Electrical Specifications:
Unless otherwise indicated, V
DD
= +2.5V to +5.5V and V
SS
= GND.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Temperature Ranges
Industrial Temperature Range
T
A
-40
—
+85
°C
Extended Temperature Range
T
A
-40
—
+125
°C
Operating Temperature Range
T
A
-40
—
+125
°C
(
Note 1
)
Storage Temperature Range
T
A
-65
—
+150
°C
Thermal Package Resistances
Thermal Resistance, 5L-SOT-23
JA
—
256
—
°C/W
Thermal Resistance, 8L-PDIP
JA
—
85
—
°C/W
Thermal Resistance, 8L-SOIC
JA
—
163
—
°C/W
Thermal Resistance, 8L-MSOP
JA
—
206
—
°C/W
Thermal Resistance, 8L-TSSOP
JA
—
124
—
°C/W
Thermal Resistance, 14L-PDIP
JA
—
70
—
°C/W
Thermal Resistance, 14L-SOIC
JA
—
120
—
°C/W
Thermal Resistance, 14L-TSSOP
JA
—
100
—
°C/W
Note 1:
The industrial temperature devices operate over this Extended temperature range, but with reduced performance. In any
case, the internal Junction Temperature (T
J
) must not exceed the absolute maximum specification of +150°C.
High-Z
t
ON
CS
t
OFF
V
OUT
-50 nA
High-Z
I
SS
I
CS
10 nA
10 nA
10 nA
-50 nA
Amplifier On
(typical)
(typical)
(typical)
(typical)
(typical)
-1 mA
(typical)
V
DD
MCP6021
2 k
:
2 k
:
1 k
:
V
OUT
V
IN
V
DD
/2
1 µF
C
L
R
L
V
L
0.1 µF
C
B1
R
N
R
G
R
F
60 pF
10 k
:
C
B2
V
DD
MCP6021
2 k
:
1 k
:
V
OUT
V
DD
/2
V
IN
1 µF
V
L
0.1 µF
2 k
:
C
L
R
L
C
B1
R
N
R
G
R
F
60 pF
10 k
:
C
B2
MCP6021/1R/2/3/4
DS20001685E-page 6
2001-2017 Microchip Technology Inc.
NOTES:
2001-2017 Microchip Technology Inc.
DS20001685E-page 7
MCP6021/1R/2/3/4
2.0
TYPICAL PERFORMANCE CURVES
Note:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
V
DD
/2,
R
L
= 10 k
to V
DD
/2 and C
L
= 60 pF.
FIGURE 2-1:
Input Offset Voltage
(Industrial Temperature Parts).
FIGURE 2-2:
Input Offset Voltage
(Extended Temperature Parts).
FIGURE 2-3:
Input Offset Voltage vs.
Common-Mode Input Voltage with V
DD
= 2.5V.
FIGURE 2-4:
Input Offset Voltage Drift
(Industrial Temperature Parts).
FIGURE 2-5:
Input Offset Voltage Drift
(Extended Temperature Parts).
FIGURE 2-6:
Input Offset Voltage vs.
Common-Mode Input Voltage with V
DD
= 5.5V.
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0%
2%
4%
6%
8%
10%
12%
14%
16%
-500
-400
-300
-200
-100
0
100
200
300
400
500
Percentage of
Occurances
Input Offset Voltage (µV)
1192 Samples
V
CM
= 0V
T
A
= +25°C
I-Temp
Parts
0%
2%
4%
6%
8%
10%
12%
14%
16%
18%
20%
22%
24%
-240
-200
-160
-120
-80
-40
0
40
80
120
160
200
240
Percentage of
Occurances
Input Offset Voltage (µV)
438 Samples
V
DD
= 5.0V
V
CM
= 0V
T
A
= +25°C
E-Temp
Parts
-500
-400
-300
-200
-100
0
100
200
300
400
500
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Input Offset V
oltage (µV)
Common Mode Input Voltage (V)
V
DD
= 2.5V
-40
°C
+25
°C
+85
°C
+125
°C
0%
2%
4%
6%
8%
10%
12%
14%
16%
18%
20%
22%
24%
-20
-16
-12
-8
-4
0
4
8
12
16
20
Percentage of
Occurances
Input Offset Voltage Drift (µV/
°C)
1192 Samples
V
CM
= 0V
T
A
= -40
°C to +85°C
I-Temp
Parts
0%
2%
4%
6%
8%
10%
12%
14%
16%
18%
20%
22%
24%
-20
-16
-12
-8
-4
0
4
8
12
16
20
Percentage of
Occurances
Input Offset Voltage Drift (µV/°C)
438 Samples
V
CM
= 0V
T
A
= -40°C to +125°C
E-Temp
Parts
-500
-400
-300
-200
-100
0
100
200
300
400
500
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Input Offset V
o
ltage
(µV)
Common Mode Input Voltage (V)
V
DD
= 5.5V
-40°C
+25°C
+85°C
+125°C
MCP6021/1R/2/3/4
DS20001685E-page 8
2001-2017 Microchip Technology Inc.
Note:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
V
DD
/2,
R
L
= 10 k
to V
DD
/2 and C
L
= 60 pF.
FIGURE 2-7:
Input Offset Voltage vs.
Temperature.
FIGURE 2-8:
Input Noise Voltage Density
vs. Frequency.
FIGURE 2-9:
CMRR, PSRR vs.
Frequency.
FIGURE 2-10:
Input Offset Voltage vs.
Output Voltage.
FIGURE 2-11:
Input Noise Voltage Density
vs. Common-Mode Input Voltage.
FIGURE 2-12:
CMRR, PSRR vs.
Temperature.
-300
-250
-200
-150
-100
-50
0
50
100
-50
-25
0
25
50
75
100
125
Input Offset V
o
ltage
(µV)
Ambient Temperature (°C)
V
DD
= 5.0V
V
CM
= 0V
1
10
100
1,000
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
1.E+06
Input Noise
V
o
ltage Density
(nV/
√
Hz)
Frequency (Hz)
0.1
1 10
100
1k
10k
1M
100k
20
30
40
50
60
70
80
90
100
1.E+02
1.E+03
1.E+04
1.E+05
1.E+06
CMRR, PSRR (dB)
Frequency (Hz)
CMRR
100
1k
10k
100k
1M
PSRR+
PSRR-
-200
-150
-100
-50
0
50
100
150
200
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Input Offset V
o
ltage
(µV)
Output Voltage (V)
V
DD
= 5.5V
V
CM
= V
DD
/2
V
DD
= 2.5V
0
2
4
6
8
10
12
14
16
18
20
22
24
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Input Noise
V
o
ltage Density
(nV/
√
Hz)
Common Mode Input Voltage (V)
V
DD
= 5.0V
f = 1 kHz
f = 10 kHz
70
75
80
85
90
95
100
105
110
-50
-25
0
25
50
75
100
125
PSRR, CMRR (dB)
Ambient Temperature (°C)
PSRR (V
CM
= 0V)
CMRR
2001-2017 Microchip Technology Inc.
DS20001685E-page 9
MCP6021/1R/2/3/4
Note:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
V
DD
/2,
R
L
= 10 k
to V
DD
/2 and C
L
= 60 pF.
FIGURE 2-13:
Input Bias, Offset Currents
vs. Common-Mode Input Voltage.
FIGURE 2-14:
Quiescent Current vs.
Supply Voltage.
FIGURE 2-15:
Output Short-Circuit Current
vs. Supply Voltage.
FIGURE 2-16:
Input Bias, Offset Currents
vs. Temperature.
FIGURE 2-17:
Quiescent Current vs.
Temperature.
FIGURE 2-18:
Open-Loop Gain, Phase vs.
Frequency.
1
10
100
1,000
10,000
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Input Bias, Offset
Currents
(pA)
Common Mode Input Voltage (V)
I
B
, T
A
= +125°C
V
DD
= 5.5V
I
OS
, T
A
= +85°C
I
OS
, T
A
= +125°C
I
B
, T
A
= +85°C
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Quiescent Current
(mA/amplifier)
Power Supply Voltage (V)
+125°C
+85°C
+25°C
-40°C
0
5
10
15
20
25
30
35
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Output Short
Circuit Current
(mA)
Supply Voltage (V)
+125°C
+85°C
+25°C
-40°C
1
10
100
1,000
10,000
25
35
45
55
65
75
85
95 105 115 125
Input Bias, Offset
Currents (pA)
Ambient Temperature (°C)
I
B
V
CM
= V
DD
V
DD
= 5.5V
I
OS
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50
-25
0
25
50
75
100
125
Quiescent Current
(mA/amplifier)
Ambient Temperature (°C)
V
DD
= 5.5V
V
DD
= 2.5V
V
CM
= V
DD
- 0.5V
-210
-195
-180
-165
-150
-135
-120
-105
-90
-75
-60
-45
-30
-15
0
-20
-10
0
10
20
30
40
50
60
70
80
90
100
110
120
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
1.E+06
1.E+07
1.E+08
Open-Loop Phase (°)
Open-Loop Gain (dB)
Frequency (Hz)
Gain
Phase
1 100
10
1k
100k
10k
1M
100M
10M
MCP6021/1R/2/3/4
DS20001685E-page 10
2001-2017 Microchip Technology Inc.
Note:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
V
DD
/2,
R
L
= 10 k
to V
DD
/2 and C
L
= 60 pF.
FIGURE 2-19:
DC Open-Loop Gain vs.
Load Resistance.
FIGURE 2-20:
Small Signal DC Open-Loop
Gain vs. Output Voltage Headroom.
FIGURE 2-21:
Gain Bandwidth Product,
Phase Margin vs. Temperature.
FIGURE 2-22:
DC Open-Loop Gain vs.
Temperature.
FIGURE 2-23:
Gain Bandwidth Product,
Phase Margin vs. Common-Mode Input Voltage.
FIGURE 2-24:
Gain Bandwidth Product,
Phase Margin vs. Output Voltage.
80
90
100
110
120
130
1.E+02
1.E+03
1.E+04
1.E+05
DC Open-Loop Gain (dB)
Load Resistance (
Ω
Ω)
V
DD
= 5.5V
V
DD
= 2.5V
100
1k
10k
100k
70
80
90
100
110
120
0.00
0.05
0.10
0.15
0.20
0.25
0.30
DC Open-Loop Gain (dB)
Output Voltage Headroom (V);
V
DD
- V
OH
or V
OL
- V
SS
V
CM
= V
DD
/2
V
DD
= 2.5V
V
DD
= 5.5V
0
10
20
30
40
50
60
70
80
90
100
0
1
2
3
4
5
6
7
8
9
10
-50
-25
0
25
50
75
100
125
Phase
Margin, G = +1 (°)
Gain Bandw
idth Product (MHz)
Ambient Temperature (°C)
PM, V
DD
= 5.5V
GBWP, V
DD
= 2.5V
PM, V
DD
= 2.5V
GBWP, V
DD
= 5.5V
90
95
100
105
110
115
120
-50
-25
0
25
50
75
100
125
DC Open-Loop Gain (dB)
Ambient Temperature (°C)
V
DD
= 5.5V
V
DD
= 2.5V
0
15
30
45
60
75
90
105
0
2
4
6
8
10
12
14
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Phase
Margin, G = +1 (°)
Gain Bandw
idth Product (MHz)
Common Mode Input Voltage (V)
Gain Bandwidth Product
Phase Margin, G = +1
V
DD
= 5.0V
0
15
30
45
60
75
90
105
0
2
4
6
8
10
12
14
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Phase
Margin, G = +1 (°)
Gain Bandw
idth Product (MHz)
Output Voltage (V)
Gain Bandwidth Product
Phase Margin, G = +1
V
DD
= 5.0V
V
CM
= V
DD
/2