MCP48FEBXX Data Sheet

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 2015 Microchip Technology Inc.

DS20005429B-page 1

MCP48FEBXX

Features

• Operating Voltage Range:

- 2.7V to 5.5V - full specifications
- 1.8V to 2.7V - reduced device specifications

• Output Voltage Resolutions:

-  8-bit: MCP48FEB0X (256 Steps)
- 10-bit: MCP48FEB1X (1024 Steps)
- 12-bit: MCP48FEB2X (4096 Steps)

• Rail-to-Rail Output
• Fast Settling Time of 7.8 µs (typical)
• DAC Voltage Reference Source Options:

- Device V

DD

 

- External  V

REF

 pin (buffered or unbuffered)

- Internal Band Gap (1.22V typical)

• Output Gain Options:

- Unity (1x)
- 2x

• Nonvolatile Memory (EEPROM):

- User-programmed Power-on Reset 

(POR)/Brown-out Reset (BOR) output 
setting, recall and device configuration bits

- Auto Recall of Saved DAC register setting
- Auto Recall of Saved Device Configuration 

(Voltage Reference, Gain, Power-Down)

• Power-on/Brown-out Reset Protection
• Power-Down Modes:

- Disconnects output buffer (High Impedance)
- Selection of V

OUT

 pull-down resistors 

(100 k

 or 1 k)

• Low Power Consumption:

- Normal operation: <180 µA (Single), 

380 µA (Dual)

- Power-down operation: 650 nA typical
- EEPROM write cycle (1.9 mA maximum)

• SPI Interface:

- Supports ‘00’ and ‘11’ modes
- Up to 20 MHz writes and 10 MHz reads
- Input buffers support interfacing to 

low-voltage digital devices

• Package Types: 10-lead MSOP
• Extended Temperature Range: -40°C to +125°C

Package Types  

 

General Description

The MCP48FEBXX are Single- and Dual-channel 8-bit,
10-bit, and 12-bit buffered voltage output
Digital-to-Analog Converters (DAC) with nonvolatile
memory and an SPI serial interface. 
The V

REF

 pin, the device V

DD

 or the internal band gap

voltage can be selected as the DAC’s reference
voltage. When V

DD

 is selected, V

DD

 is connected

internally to the DAC reference circuit. When the V

REF

pin is used, the user can select the output buffer’s gain
to be 1 or 2. When the gain is 2, the V

REF

 pin voltage

should be limited to a maximum of V

DD

/2.

These devices have an SPI-compatible serial interface.
Write commands are supported up to 20 MHz while
read commands are supported up to 10 MHz.

Applications

• Set Point or Offset Trimming
• Sensor Calibration
• Low-Power Portable Instrumentation
• PC Peripherals
• Data Acquisition Systems
• Motor Control

Note 1:

 Associated with both DAC0 and DAC1 

Dual 

Single

MCP48FEBx2 

MSOP

MCP48FEBx1 

1
2

3

4

7

8

9

10

V

SS

 

V

OUT0

V

REF0

CS

V

DD

 

SCK

SDI

SDO

5

6

LAT0/HVC

NC

MSOP

1

2

3

4

7

8

9

10

V

SS

 

V

OUT0

V

REF

(1)

CS

V

DD

 

SCK

SDI

SDO

5

6

LAT0/HVC 

(1)

V

OUT1

8-/10-/12-Bit Single/Dual Voltage Output Nonvolatile 

Digital-to-Analog Converters with SPI Interface

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MCP48FEBXX

DS20005429B-page 2

 2015 Microchip Technology Inc.

MCP48FEBX1 Device Block Diagram (Single-Channel Output)   

 

Power-up/
Brown-out Control

V

DD

 

V

SS

 

SPI Serial Interface Module

Memory (32x16)

DAC0 (Vol and NV)

V

REF0

Op
Amp

Gain

 

V

OUT0

LAT0/HVC

Re

si

st

o

La

dde

r

V

SS

 

PD1:PD0 and 

VREF1:VREF0

VREF1:VREF0

+

-

V

DD

 

SDI 

SDO 

Band Gap 
(1.22V)

PD1:PD0 

VREF1:VREF0

V

DD

 

V

BG

PD1:PD0 

1k

100

k

VREF (Vol and NV)
Power-down (Vol and NV)
Gain (Vol and NV)
Status (Vol)

(

1

)

and PD1:PD0

Note 1:

If Internal Band Gap is selected, this buffer has a 2x gain. If the G bit = ‘1’, this is a total gain of 4.

SCK 

CS 

and
Control Logic

 

(WiperLock™ Technology)

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 2015 Microchip Technology Inc.

DS20005429B-page 3

MCP48FEBXX

MCP48FEBX2 Device Block Diagram (Dual-Channel Output)   

 

Power-up/

Brown-out Control

V

DD

 

V

SS

 

SPI Serial Interface Module

V

REF

LAT/HVC

Re

si

st

o

La

dde

r

Op
Amp

Gain 

V

OUT1

Re

si

sto

Lad

der

intVR1

PD1:PD0 and 

VREF1:VREF0

VREF1:VREF0

+

-

V

DD

 

PD1:PD0 and 

VREF1:VREF0

VREF1:VREF0

+

-

V

DD

 

SDI 

SDO 

Band Gap 
(1.22V)

Band Gap 

(1.22V)

PD1:PD0 

V

DD

 

V

BG

V

DD

 

V

SS

 

V

SS

 

PD1:PD0 

Op
Amp

Gain 

V

OUT0

1k

10

0

k

1k

10

0

k

Memory (32x16)

DAC0 and 1 (Vol & NV)
VREF (Vol and NV)

Power-down (Vol and NV)
Gain (Vol and NV)
Status (Vol)

VREF1:VREF0

and PD1:PD0

VREF1:VREF0
and PD1:PD0

PD1:PD0 

PD1:PD0 

(

1

)

(

1

)

Note 1:

If Internal Band Gap is selected, this buffer has a 2x gain, if the G bit = ‘1’, this is a total gain of 4.

SCK 

CS 

and
Control Logic

(WiperLock™ Technology) 

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MCP48FEBXX

DS20005429B-page 4

 2015 Microchip Technology Inc.

Device Features  

Device

# o

Cha

n

ne

ls

Re

s

o

lutio

n

 

(bit

s

)

Con

trol 

In

terfac

e

DAC Outp

ut 

POR/BOR

 

Se

tting 

(

1

)

 

# of 

VREF 

Inputs

Internal 

band 

gap ?

# of 

LAT 

Inputs

Memory

Specified 

Operating Range 

(V

DD

(

2

)

 

MCP48FEB01

1

8

SPI

7Fh

1

Yes

1

EEPROM

1.8V to 5.5V

MCP48FEB11

1

10

SPI

1FFh

1

Yes

1

EEPROM

1.8V to 5.5V

MCP48FEB21

1

12

SPI

7FFh

1

Yes

1

EEPROM

1.8V to 5.5V

MCP48FEB02

2

8

SPI

7Fh

1

Yes

1

EEPROM

1.8V to 5.5V

MCP48FEB12

2

10

SPI

1FFh

1

Yes

1

EEPROM

1.8V to 5.5V

MCP48FEB22

2

12

SPI

7FFh

1

Yes

1

EEPROM

1.8V to 5.5V

MCP47FVB01

1

8

I

2

C™

7Fh

1

Yes

1

RAM

1.8V to 5.5V

MCP47FVB11

1

10

I

2

C

1FFh

1

Yes

1

RAM

1.8V to 5.5V

MCP47FVB21

1

12

I

2

C

7FFh

1

Yes

1

RAM

1.8V to 5.5V

MCP47FVB02

2

8

I

2

C

7Fh

1

Yes

1

RAM

1.8V to 5.5V

MCP47FVB12

2

10

I

2

C

1FFh

1

Yes

1

RAM

1.8V to 5.5V

MCP47FVB22

2

12

I

2

C

7FFh

1

Yes

1

RAM

1.8V to 5.5V

MCP47FEB01

1

8

I

2

C

7Fh

1

Yes

1

EEPROM

1.8V to 5.5V

MCP47FEB11

1

10

I

2

C

1FFh

1

Yes

1

EEPROM

1.8V to 5.5V

MCP47FEB21

1

12

I

2

C

7FFh

1

Yes

1

EEPROM

1.8V to 5.5V

MCP47FEB02

2

8

I

2

C

7Fh

1

Yes

1

EEPROM

1.8V to 5.5V

MCP47FEB12

2

10

I

2

C

1FFh

1

Yes

1

EEPROM

1.8V to 5.5V

MCP47FEB22

2

12

I

2

C

7FFh

1

Yes

1

EEPROM

1.8V to 5.5V

Note 1:

Factory Default value. The DAC output POR/BOR value can be modified via the nonvolatile DAC output 
register(s) (available only on nonvolatile devices (MCP4XFEBXX)).

2:

Analog output performance specified from 2.7V to 5.5V. 

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 2015 Microchip Technology Inc.

DS20005429B-page 5

MCP48FEBXX

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings 

(†)

 

Voltage on V

DD

 with respect to V

SS

  .........................................................................................................  -0.6V to +6.5V

Voltage on all pins with respect to V

SS

 ............................................................................................... -0.6V to V

DD

+0.3V

Input clamp current, I

IK

 (V

I

 < 0, V

I

 > V

DD

, V

I

 > V

PP

 on HV pins) ..........................................................................±20 mA

Output clamp current, I

OK

 (V

O

 < 0 or V

O

 > V

DD

)...................................................................................................±20 mA

Maximum current out of V

SS

 pin 

(Single) ..........................................................................................................50 mA
(Dual)...........................................................................................................100 mA

Maximum current into V

DD

 pin

(Single) ..........................................................................................................50 mA
(Dual)...........................................................................................................100 mA

Maximum current sourced by the V

OUT

 pin ............................................................................................................20 mA

Maximum current sunk by the V

OUT

 pin..................................................................................................................20 mA

Maximum current sunk by the V

REF

 pin .................................................................................................................125 µA

Maximum input current source/sunk by SDI, SCK, and CS pins  .............................................................................2 mA
Maximum output current sunk by SDO Output pin .................................................................................................25 mA
Total power dissipation 

(

1

)

....................................................................................................................................400 mW

Package power dissipation (T

A

 = +50°C, T

J

 = +150°C) 

MSOP-10 ..................................................................................................................................................490 mW

ESD protection on all pins

±4 kV (HBM)

±400V (MM)
 ±1.5 kV (CDM)

Latch-Up (per JEDEC JESD78A) @ +125°C .....................................................................................................±100 mA
Storage temperature ...............................................................................................................................-65°C to +150°C
Ambient temperature with power applied ...............................................................................................-55°C to +125°C
Soldering temperature of leads (10 seconds) ....................................................................................................... +300°C
Maximum Junction Temperature (T

J

).................................................................................................................... +150°C

   

Note 1:

Power dissipation is calculated as follows: 
P

DIS

 = V

DD

 x {I

DD

 - 

 I

OH

} + 

 {(V

DD

– V

OH

) x I

OH

} + 

(V

OL

 x I

OL

† Notice:

 Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is 

a stress rating only and functional operation of the device at those or any other conditions above those indicated in the 
operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods 
may affect device reliability.

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MCP48FEBXX

DS20005429B-page 6

 2015 Microchip Technology Inc.

  

DC CHARACTERISTICS

DC Characteristics

Standard Operating Conditions (unless otherwise specified):
Operating Temperature: -40°C 

 T

A

 

 +125°C (Extended) 

Unless otherwise noted, all parameters apply across these specified operating ranges:
V

DD

 = +2.7V to 5.5V, V

REF

 = +2.048V to V

DD

, V

SS

 = 0V

Gx = ‘0’, R

L

 = 5 k

 from V

OUT

 to V

SS

, C

L

 = 100 pF

Typical specifications represent values for V

DD

 = 5.5V, T

A

 = +25°C.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Supply Voltage 

V

DD

 2.7

5.5

V

1.8

2.7

V

DAC operation (reduced analog 
specifications) and Serial Interface

V

DD

 Voltage 

(rising) to ensure device 
Power-on Reset

V

POR/BOR

 

1.7

V

RAM retention voltage (V

RAM

) < V

POR

 

V

DD

 voltages greater than V

POR/BOR

 

limit Ensure that device is out of reset.

V

DD

 Rise Rate to ensure 

Power-on Reset

V

DDRR

 

(

Note 3

)

V/ms

High-Voltage Commands 
Voltage Range (HVC pin) 

V

HV

 

V

SS

 

12.5 

V

The HVC pin will be at one of three input 
levels (V

IL

, V

IH

 or V

IHH

(

1

)

High-Voltage 
Input Entry Voltage

V

IHHEN

 

9.0

V

Threshold for Entry into 
WiperLock Technology 

High-Voltage 
Input Exit Voltage

V

IHHEX

 

V

DD

+ 0.8V

V

(

Note 2

)

Power-on Reset to Out-
put-Driven Delay 

T

PORD

25

50

µs

V

DD

 rising, V

DD

 > V

POR

 

Note 1

This parameter is ensured by design.

Note 2

This parameter is ensured by characterization.

Note 3

POR/BOR voltage trip point is not slope dependent. Hysteresis implemented with time delay.

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 2015 Microchip Technology Inc.

DS20005429B-page 7

MCP48FEBXX

DC CHARACTERISTICS (CONTINUED)

DC Characteristics

Standard Operating Conditions (unless otherwise specified):
Operating Temperature: -40°C 

 T

A

 

 +125°C (Extended) 

Unless otherwise noted, all parameters apply across these specified operating ranges:
V

DD

 = +2.7V to 5.5V, V

REF

 = +2.048V to V

DD

, V

SS

 = 0V

Gx = ‘0’, R

L

 = 5 k

 from V

OUT

 to V

SS

, C

L

 = 100 pF

Typical specifications represent values for V

DD

 = 5.5V, T

A

 = +25°C.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Supply Current 

I

DD

 —

320

µA

Single 1MHz 

(

2

)

  Serial Interface Active 

(Not High-Voltage Command)
VRxB:VRxA = ‘01’ 

(

6

)

 

V

OUT

 is unloaded, V

DD

 = 5.5V

Volatile DAC Register = 000h 

910

µA

10MHz 

(

2

)

 

1.7

mA

20MHz

510

µA

Dual

1MHz 

(

2

)

 

1.1

mA

10MHz 

(

2

)

 

1.85

mA

20MHz

250

µA

Single 1MHz 

(

2

)

  Serial Interface Active

(Not High-Voltage Command) 
VRxB:VRxA = ‘10’ 

(

4

)

V

OUT

 is unloaded.

V

REF

 = V

DD

 = 5.5V

Volatile DAC Register = 000h 

840

µA

10MHz 

(

2

)

 

1.65

mA

20MHz 

(

2

)

380

µA

Dual

1MHz 

(

2

)

 

970

µA

10MHz 

(

2

)

 

1.75

mA

20MHz 

(

2

)

180

µA

Single Serial Interface Inactive 

(

2

)

 

(Not High-Voltage Command)
VRxB:VRxA = ‘00’
SCK = SDI = V

SS

V

OUT

 is unloaded.

Volatile DAC Register = 000h 

380

µA

Dual

180

µA

Single Serial Interface Inactive 

(

2

(Not High-Voltage Command)
VRxB:VRxA = ‘11’, V

REF

 = V

DD

SCK = SDI = V

SS

 

V

OUT

 is unloaded.

Volatile DAC Register = 000h 

380

µA

Dual

1.9

mA

EE Write Current 
V

REF

 = V

DD

 = 5.5V 

(After write, Serial Interface is Inactive.) 
Write all 0’s to non-volatile DAC 0 (address 10h). 
V

OUT

 pins are unloaded. 

145

180

µA

Single HVC = 12.5V (High-Voltage Command)

Serial Interface Inactive 
V

REF

 = V

DD

 = 5.5V, LAT/HVC = V

IHH

 

DAC registers = 000h
V

OUT

 pins are unloaded. 

260

400

µA

Dual

Power-Down 
Current

I

DDP

0.65

3.8

µA

PDxB:PDxA = ‘01’ 

(

5

)

V

OUT

 not connected

Note 2

This parameter is ensured by characterization.

Note 4

Supply current is independent of current through the resistor ladder in mode VRxB:VRxA = ‘10’.

Note 5

The PDxB:PDxA = ‘01’, ‘10’, and ‘11’ configurations should have the same current.

Note 6

By design, this is the worst-case current mode.

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background image

MCP48FEBXX

DS20005429B-page 8

 2015 Microchip Technology Inc.

DC CHARACTERISTICS (CONTINUED)    

DC Characteristics

Standard Operating Conditions (unless otherwise specified):
Operating Temperature: -40°C 

 T

A

 

 +125°C (Extended) 

Unless otherwise noted, all parameters apply across these specified operating ranges:
V

DD

 = +2.7V to 5.5V, V

REF

 = +2.048V to V

DD

, V

SS

 = 0V

Gx = ‘0’, R

L

 = 5 k

 from V

OUT

 to V

SS

, C

L

 = 100 pF

Typical specifications represent values for V

DD

 = 5.5V, T

A

 = +25°C.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Resistor Ladder 
Resistance 

R

L

100

140

180

k

 1.8V 

 V

DD

 

 5.5V

V

REF

 

 1.0V 

(

7

)

Resolution 
(# of Resistors 
and # of Taps) (see 

B.1 “Resolution”

N

256

Taps

8-bit No Missing Codes

1024

Taps

10-bit No Missing Codes

4096

Taps

12-bit No Missing Codes

Nominal V

OUT

 Match 

(

11

)

|V

OUT

 - V

OUTMEAN

|

/V

OUTMEAN

 

0.5

1.0

%

2.7V 

 V

DD

 

 5.5V 

(

2

)

1.2

%

1.8V 

(

2

)

V

OUT

 Tempco (see 

B.19 “V

OUT

 

Temperature 
Coefficient”

) 

V

OUT

/

T

15

ppm/°C Code = Mid-scale 

(7Fh, 1FFh or 7FFh)

V

REF

 pin Input Voltage 

Range 

V

REF

V

SS

V

DD

V

1.8V 

 V

DD

 

 5.5V 

(

1

)

Note 1

This parameter is ensured by design.

Note 2

This parameter is ensured by characterization.

Note 7

Resistance is defined as the resistance between the V

REF

 pin (mode VRxB:VRxA = ‘10’) to V

SS

 pin. For 

dual-channel devices (MCP48FEBX2), this is the effective resistance of the each resistor ladder. The 
resistance measurement is of the two resistor ladders measured in parallel.

Note 11

Variation of one output voltage to mean output voltage.

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 2015 Microchip Technology Inc.

DS20005429B-page 9

MCP48FEBXX

DC CHARACTERISTICS (CONTINUED)        

DC 
Characteristics

Standard Operating Conditions (unless otherwise specified):
Operating Temperature: -40°C 

 T

A

 

 +125°C (Extended) 

Unless otherwise noted, all parameters apply across these specified operating ranges:
V

DD

 = +2.7V to 5.5V, V

REF

 = +2.048V to V

DD

, V

SS

 = 0V

Gx = ‘0’, R

L

 = 5 k

 from V

OUT

 to V

SS

, C

L

 = 100 pF

Typical specifications represent values for V

DD

 = 5.5V, T

A

 = +25°C.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Zero-Scale Error   
(see 

B.5 

“Zero-Scale 
Error (EZS)”

(Code = 000h)

E

ZS

0.75

LSb

8-bit 

VRxB:VRxA = ‘11’, Gx = ‘0’ 
V

REF

 = V

DD

, No Load

See 

Section 2.0 “Typical 

Performance Curves”

 

(

2

  

LSb

VRxB:VRxA = ‘00’, Gx = ‘0’ 
V

DD

 = 5.5V, No Load

See 

Section 2.0 “Typical 

Performance Curves”

 

(

2

  

LSb

V

DD

 = 1.8V, V

REF

 = 1.0V 

VRxB:VRxA = ‘10’, Gx = ‘0’, No Load

See 

Section 2.0 “Typical 

Performance Curves”

 

(

2

)  

 

LSb

V

DD

 = 1.8V, V

REF

 = 1.0V 

VRxB:VRxA = ‘11’, Gx = ‘0’, No Load 

See 

Section 2.0 “Typical 

Performance Curves”

 

(

2

  

LSb

VRxB:VRxA = ‘01’, Gx = ‘0’, No Load 

3

LSb

10-bit  VRxB:VRxA = ‘11’, Gx = ‘0’ 

V

REF

 = V

DD

, No Load

See 

Section 2.0 “Typical 

Performance Curves”

 

(

2

)  

 

LSb

VRxB:VRxA = ‘00’, Gx = ‘0’ 
V

DD

 = 5.5V, No Load

See 

Section 2.0 “Typical 

Performance Curves”

 

(

2

)   

LSb

V

DD

 = 1.8V, V

REF

 = 1.0V 

VRxB:VRxA = ‘10’, Gx = ‘0’, No Load

See 

Section 2.0 “Typical 

Performance Curves”

 

(

2

  

LSb

V

DD

 = 1.8V, V

REF

 = 1.0V 

VRxB:VRxA = ‘11’, Gx = ‘0’, No Load 

See 

Section 2.0 “Typical 

Performance Curves”

 

(

2

  

LSb

VRxB:VRxA = ‘01’, Gx = ‘0’
No Load 

12

LSb

12-bit  VRxB:VRxA = ‘11’, Gx = ‘0’ 

V

REF

 = V

DD

, No Load

See 

Section 2.0 “Typical 

Performance Curves”

 (

2

  

LSb

VRxB:VRxA = ‘00’, Gx = ‘0’ 
V

DD

 = 5.5V, No Load

See 

Section 2.0 “Typical 

Performance Curves”

 

(

2

)   

LSb

V

DD

 = 1.8V, V

REF

 = 1.0V 

VRxB:VRxA = ‘10’, Gx = ‘0’, No Load

See 

Section 2.0 “Typical 

Performance Curves”

 

(

2

)  

 

LSb

V

DD

 = 1.8V, V

REF

 = 1.0V 

VRxB:VRxA = ‘11’, Gx = ‘0’, No Load 

See 

Section 2.0 “Typical 

Performance Curves”

 

(

2

)  

 

LSb

VRxB:VRxA = ‘01’, Gx = ‘0’
No Load 

Offset Error 
(see 

B.7 “Offset 

Error (EOS)”

)

E

OS

 -15

±1.5

+15

mV

VRxB:VRxA 

‘00’

Gx = ‘0’
No Load 

Offset Voltage 
Temperature 
Coefficient

V

OSTC

 

±10

µV/°C

Note 2

This parameter is ensured by characterization.

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MCP48FEBXX

DS20005429B-page 10

 2015 Microchip Technology Inc.

DC CHARACTERISTICS (CONTINUED)         

DC Characteristics

Standard Operating Conditions (unless otherwise specified):
Operating Temperature: -40°C 

 T

A

 

 +125°C (Extended) 

Unless otherwise noted, all parameters apply across these specified operating ranges:
V

DD

 = +2.7V to 5.5V, V

REF

 = +2.048V to V

DD

, V

SS

 = 0V

Gx = ‘0’, R

L

 = 5 k

 from V

OUT

 to GND, C

L

 = 100 pF

Typical specifications represent values for V

DD

 = 5.5V, T

A

 = +25°C.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Full-Scale Error 
(see 

B.4 

“Full-Scale 
Error (EFS)”

E

FS

4.5

LSb

8-bit 

Code = FFh, VRxB:VRxA = ‘11’ 
Gx = ‘0’, V

REF

 = 2.048V, No Load 

See 

Section 2.0 “Typical 

Performance Curves”

(

2

)  

 

LSb

Code = FFh, VRxB:VRxA = ‘10’ 
Gx = ‘0’, V

REF

 = 2.048V, No Load 

See 

Section 2.0 “Typical 

Performance Curves”

(

2

  

LSb

Code = FFh, VRxB:VRxA = ‘01’ 
Gx = ‘0’, V

REF

 = 2.048V, No Load 

See 

Section 2.0 “Typical 

Performance Curves”

(

2

  

LSb

Code = FFh, VRxB:VRxA = ‘00’ 
No Load 

18

LSb

10-bit  Code = 3FFh, VRxB:VRxA = ‘11’ 

Gx = ‘0’, V

REF

 = 2.048V, No Load 

See 

Section 2.0 “Typical 

Performance Curves”

(

2

)  

 

LSb

Code = 3FFh, VRxB:VRxA = ‘10’ 
Gx = ‘0’, V

REF

 = 2.048V, No Load 

See 

Section 2.0 “Typical 

Performance Curves”

(

2

  

LSb

Code = 3FFh, VRxB:VRxA = ‘01’ 
Gx = ‘0’, V

REF

 = 2.048V, No Load 

See 

Section 2.0 “Typical 

Performance Curves”

(

2

  

LSb

Code = 3FFh, VRxB:VRxA = ‘00’ 
No Load 

70

LSb

12-bit  Code = FFFh, VRxB:VRxA = ‘11’ 

Gx = ‘0’, V

REF

 = 2.048V, No Load 

See 

Section 2.0 “Typical 

Performance Curves”

(

2

)  

 

LSb

Code = FFFh, VRxB:VRxA = ‘10’ 
Gx = ‘0’, V

REF

 = 2.048V, No Load 

See 

Section 2.0 “Typical 

Performance Curves”

(

2

  

LSb

Code = FFFh, VRxB:VRxA = ‘01’
Gx = ‘0’, V

REF

 = 2.048V, No Load 

See 

Section 2.0 “Typical 

Performance Curves”

(

2

  

LSb

Code = FFFh, VRxB:VRxA = ‘00’ 
No Load 

Note 2

This parameter is ensured by characterization.

Maker
Microchip Technology Inc.
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