MCP39F501 Data Sheet

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 2013 Microchip Technology Inc.

DS20005256A-page 1

MCP39F501

Features:

• Power Monitoring Accuracy capable of 0.1% error 

across 4000:1 dynamic range

• Fast Calibration Routines

• Programmable Event Notifications such as over-

current and voltage sag, surge protection

• 512 bytes User-accessible EEPROM through 

page read/write commands

• Non-volatile On-chip Memory, no external 

memory required

• Built-in calculations on fast 16-bit processing core

- Active, Reactive and Apparent Power

- True RMS Current, RMS Voltage

- Line Frequency, Power Factor

• Two-Wire Serial Protocol using a 2-wire Universal 

Asynchronous Receiver/Transmitter (UART) inter-
face supporting multiple devices on a single bus

• Low-Drift Internal Voltage Reference, 10 ppm/°C 

typical

• 28-lead 5x5 QFN package

• Extended Temperature Range -40°C to +125°C

Applications:

• Real-time Measurement of Input Power for 

AC/DC supplies

• Intelligent Power Distribution Units

Description:

The MCP39F501 is a highly integrated, single-phase
power-monitoring IC designed for real-time
measurement of input power for AC/DC power
supplies, power distribution units and industrial
applications. It includes dual-channel delta sigma
ADCs, a 16-bit calculation engine, EEPROM and a
flexible 2-wire interface. An integrated low-drift voltage
reference with 10 ppm/°C in addition to 94.5 dB of
SINAD performance on each measurement channel
allows for better than 0.1% accurate designs across a
4000:1 dynamic range.

Package Type 

Functional Block Diagram   

1

25

2

3

4

5

8

9

10 11 12

21

20

19

18

17

28 27 26

24

MODE/DIR

NC

UART_RX

COMMON

A

NC

NC

NC

AV

DD

UAR

T

_

T

X

RESET

DV

DD

D

GN

D

MC

L

R

EP
29

6

7

OSCI

OSCO

13 14

CO

M

M

ON

B

A

0

/D

IO0

16

15

23 22

REF

IN+/O

UT

DIO3

I1+

I1-

V1-

V1+

AN_IN/DIO2

A

GND

D

GN

D

A1/DIO1

DR

MCP39F501

5x5 QFN*

* Includes Exposed 
Thermal Pad (EP); see 

Table 3-1

.

24-bit Delta Sigma 

Multi-level

+

-

SI

N

C

3

Di

gi

ta

l Fi

lt

e

r

Modulator ADC 

PGA 

I1+

I1-

24-bit Delta Sigma 

Multi-level

+

-

SI

NC

3

D

igi

ta

l F

ilt

er

Modulator ADC 

PGA 

V1+

V1-

16-BIT

CORE

Calculation

Engine 

(CE)

Configurable

Digital Outputs

UART

Serial

Interface

UART_TX

UART_RX

A0/DIO0

FLASH

 10-bit SAR

ADC

AN_IN/DIO2

OSCI

OSCO

Timing 

Generation

Internal

Oscillator

Generation

AV

DD

A

GND

DV

DD

D

GND

A1/DIO1

MODE/DIR

DIO3

AN_IN/DIO2

Single-Phase, Power-Monitoring IC with Calculation and Event Detection

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MCP39F501

DS20005256A-page 2

 2013 Microchip Technology Inc.

MCP39F501 Typical Application – Single Phase, Two-Wire Application Schematic 

D

GND

OSCO

OSCI

DV

DD

RESET

AV

DD

I1+

I1-

V1-

V1+

NC
NC
NC

REFIN/OUT+

A

GND

COMMON

A,B

NC

LOAD

+3.3V

N

L

MCP1754

+3.3V

A

GND

D

GND

+

-

33 nF

33 nF

33 nF

1 k

1 k

1 k

720 k

1 k

4 MHz

22 pF

22 pF

33 nF

0.01 µF

0.47 µ F 470

470 µF

10

1 µF

0.1 µF

0.1 µF

0.1 µF

0.5 m

1 m

TEMPIN/DIO2

2 m

Leave Floating

N.C. 

MCP9700A

(OPTIONAL)

+3.3V

to MCU UART

to MCU UART

UART_RX

UART_TX

DR

(OPTIONAL)

Connect on PCB

A0/DIO0

DIO3

A1/DIO1

MODE/DIR

DIO2

Address setting for multiple devices

or

Alarm with Event Functions

MCP39F501

4 m

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 2013 Microchip Technology Inc.

DS20005256A-page 3

MCP39F501

1.0

ELECTRICAL 
CHARACTERISTICS

Absolute Maximum Ratings †

DV

DD

.....................................................................-0.3 to 4.5V

AV

DD

.....................................................................-0.3 to 4.0V

Digital inputs and outputs w.r.t. A

GND

................. -0.3V to 4.0V

Analog Inputs (I+,I-,V+,V-) w.r.t. A

GND

............... ....-2V to +2V

V

REF

 input w.r.t. A

GND

.............................-0.6V to AV

DD 

+0.6V

Maximum Current out of D

GND

 pin..............................300 mA

Maximum Current into DV

DD

 pin.................................250 mA

Maximum Output Current Sunk by Digital IO ................25 mA
Maximum Current Sourced by Digital IO.......................25 mA
Storage temperature .....................................-65°C to +150°C
Ambient temperature with power applied......-40°C to +125°C
Soldering temperature of leads (10 seconds) ............. +300°C
ESD on the analog inputs (HBM,MM) ................. 4.0 kV, 200V
ESD on all other pins (HBM,MM) ........................ 4.0 kV, 200V

† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operation listings of this specification is
not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.

1.1

Specifications 

TABLE 1-1:

ELECTRICAL CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, all parameters apply at AV

DD, 

DV

DD

 = 2.7 to 3.6 V, T

A

 = -40°C to +125°C, 

MCLK = 4 MHz, PGA GAIN = 1.

Characteristic

Sym.

Min.

Typ.

Max.

Units

Test Conditions

Power Measurement

Active Power (

Note 2

)

P

±0.1

%

4000:1 Dynamic Range on 
Current Channel (

Note 1

)

Reactive Power (

Note 2

)

Q

±0.1

%

4000:1 Dynamic Range on 
Current Channel (

Note 1

)

Apparent Power (

Note 2

)

S

±0.1

%

4000:1 Dynamic Range on 
Current Channel (

Note 1

)

Current RMS (

Note 2

)

I

RMS

±0.1

%

4000:1 Dynamic Range on 
Current Channel (

Note 1

)

Voltage RMS (

Note 2

)

V

RMS

±0.1

%

4000:1 Dynamic Range on 
Voltage Channel (

Note 1

)

Power Factor (

Note 2

)

±0.1

%

Line Frequency (

Note 2

)

V

RMS

±0.1

%

Calibration, Calculation and Event Detection Times

Auto-Calibration Time

t

CAL

2

N

x (1/f

LINE

)

ms

Note 7

Minimum Calculation
and Event Detection Time

t

CALC_EVENT

2

N

x (1/f

LINE

)

ms

Minimum Time 
for Voltage Sag Detection

t

AC_DROP

see

 

Section 7.7

ms

Note 4

Note 1:

Specification by design and characterization; not production tested.

2:

Calculated from reading the register values.

3:

V

IN

= 1V

PP

= 353 mV

RMS

@ 50/60 Hz.

4:

Applies to Voltage Sag and Voltage Surge Events Only.

5:

Variation applies to internal clock and UART only. All calculated output quantities are temperature compensated to the 
performance listed in the respective specification.

6:

Applies to all gains. Offset and gain errors depend on the PGA gain setting. See 

Section 2.0 “Typical Performance 

Curves”

 for typical performance.

7:

N = Value in the AccumulationInternalParameter register (0x005A). The default value of this register is 2 or T

CAL

= 80 ms 

for 50 Hz line.

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MCP39F501

DS20005256A-page 4

 2013 Microchip Technology Inc.

24-Bit Delta Sigma ADC Performance

Analog Input 
Absolute Voltage 

V

IN

-1

+1

V

Analog Input 
Leakage Current

A

IN

1

nA

Differential Input 
Voltage Range

(I1+ – I1-),

(V1+ – V1-)

-600/GAIN

+600/GAIN

mV

V

REF

 = 1.2V, 

proportional to V

REF

Offset Error 

V

OS

-1

+1

mV

Offset Error Drift 

0.5

µV/°C

Gain Error

GE

-4

+4

%

Note 6

Gain Error Drift 

1

ppm/°C

Differential Input 
Impedance

Z

IN

232

k

G = 1

142

k

G = 2

72

k

G = 4

38

k

G = 8

36

k

G = 16

33

k

G = 32

Signal-to-Noise 
and Distortion Ratio

SINAD

92

94.5

dB

Note 3

Total Harmonic Distortion

THD

-106.5

-103

dBc

Note 3

Signal-to-Noise Ratio

SNR

92

95

dB

Note 3

Spurious Free 
Dynamic Range

SFDR

111

dB

Note 3

Crosstalk

CTALK

-122

dB

AC Power 
Supply Rejection Ratio

AC PSRR

-73

dB

AV

DD

 and 

DV

DD

= 3.3V + 0.6V

PP

100 Hz, 120 Hz, 1 kHz

DC Power 
Supply Rejection Ratio

DC PSRR

-73

dB

AV

DD

 and DV

DD

= 3.0 to 

3.6V

DC Common 
Mode Rejection Ratio

DC CMRR

-105

dB

V

CM

 varies 

from -1V to +1V

10-Bit SAR ADC Performance for Temperature Measurement

Resolution

N

R

10

bits

Absolute Input Voltage

V

IN

D

GND

- 0.3

D

GND

+ 0.3

V

Recommended 
Impedance of 
Analog Voltage Source

R

IN

2.5

k

Integral Non-Linearity

I

NL

±1

±2

LSb

TABLE 1-1:

ELECTRICAL CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise indicated, all parameters apply at AV

DD, 

DV

DD

 = 2.7 to 3.6 V, T

A

 = -40°C to +125°C, 

MCLK = 4 MHz, PGA GAIN = 1.

Characteristic

Sym.

Min.

Typ.

Max.

Units

Test Conditions

Note 1:

Specification by design and characterization; not production tested.

2:

Calculated from reading the register values.

3:

V

IN

= 1V

PP

= 353 mV

RMS

@ 50/60 Hz.

4:

Applies to Voltage Sag and Voltage Surge Events Only.

5:

Variation applies to internal clock and UART only. All calculated output quantities are temperature compensated to the 
performance listed in the respective specification.

6:

Applies to all gains. Offset and gain errors depend on the PGA gain setting. See 

Section 2.0 “Typical Performance 

Curves”

 for typical performance.

7:

N = Value in the AccumulationInternalParameter register (0x005A). The default value of this register is 2 or T

CAL

= 80 ms 

for 50 Hz line.

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DS20005256A-page 5

MCP39F501

Differential Non-Linearity

D

NL

±1

±1.5

LSb

Gain Error

G

ERR

±1

±3

LSb

Offset Error

E

OFF

±1

±2

LSb

Temperature 
Measurement Rate

f

LINE

/2

N

sps

Note 7

Clock and Timings

UART Baud Rate

UDB

4.8

kbps

See 

Section 3.2

 for 

protocol details

Master Clock 
and Crystal Frequency

f

MCLK

-2%

4

+2%

MHz

Capacitive Loading 
on OSCO pin

COSC2

15

pF

When an external clock is 
used to drive the device

Internal Oscillator 
Tolerance

f

INT_OSC

2

%

-40 to +85°C only (

Note 5

)

Internal Voltage Reference

Internal Voltage 
Reference Tolerance

V

REF

-2%

1.2

+2%

V

Temperature Coefficient

TCV

REF

10

ppm/°C T

A

 = -40°C to +85°C, 

VREFEXT = 0

Output Impedance

ZOUTV

REF

2

k

Current, V

REF

AI

DD

V

REF

40

µA

Voltage Reference Input

Input Capacitance

10

pF

Absolute Voltage on 
V

REF+ 

Pin

V

REF+

A

GND

+  1.1V

A

GND

+ 1.1V

V

Power Specifications

Operating Voltage

AV

DD

, DV

DD

2.7

3.6

V

DV

DD

 Start Voltage 

to Ensure Internal 
Power-On Reset Signal

V

POR

D

GND

0.7

V

DV

DD

 Rise Rate to 

Ensure Internal 
Power-On Reset Signal

SDV

DD

0.05

V/ms

0 – 3.3V in 0.1s, 0 – 2.5V 
in 60 ms

AV

DD

 Start Voltage to 

Ensure Internal 
Power-On Reset Signal

V

POR

A

GND

2.1

V

AV

DD

 Rise Rate to 

Ensure Internal Power On 
Reset Signal

SAV

DD

0.042

V/ms

0 – 2.4V in 50 ms

TABLE 1-1:

ELECTRICAL CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise indicated, all parameters apply at AV

DD, 

DV

DD

 = 2.7 to 3.6 V, T

A

 = -40°C to +125°C, 

MCLK = 4 MHz, PGA GAIN = 1.

Characteristic

Sym.

Min.

Typ.

Max.

Units

Test Conditions

Note 1:

Specification by design and characterization; not production tested.

2:

Calculated from reading the register values.

3:

V

IN

= 1V

PP

= 353 mV

RMS

@ 50/60 Hz.

4:

Applies to Voltage Sag and Voltage Surge Events Only.

5:

Variation applies to internal clock and UART only. All calculated output quantities are temperature compensated to the 
performance listed in the respective specification.

6:

Applies to all gains. Offset and gain errors depend on the PGA gain setting. See 

Section 2.0 “Typical Performance 

Curves”

 for typical performance.

7:

N = Value in the AccumulationInternalParameter register (0x005A). The default value of this register is 2 or T

CAL

= 80 ms 

for 50 Hz line.

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MCP39F501

DS20005256A-page 6

 2013 Microchip Technology Inc.

  

Operating Current

I

DD

13

mA

Data EEPROM Memory

Cell Endurance

EPS

100,000

E/W

Self-Timed 
Write Cycle Time

T

IWD

4

ms

Number of Total 
Write/Erase Cycles 
Before Refresh

R

REF

10,000,000

E/W

Characteristic Retention

T

RETDD

40

Years

Provided no other 
specifications are violated

Supply Current during 
Programming

I

DDPD

7

mA

TABLE 1-2:

SERIAL DC CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, all parameters apply at AV

DD, 

DV

DD

 = 2.7 to 3.6 V, 

T

A

 = -40°C to +125°C, MCLK = 4 MHz

Characteristic

Sym.

Min.

Typ.

Max.

Units

Test Conditions

High-Level Input Voltage

V

IH

0.8 DV

DD

DV

DD

V

Low-Level Input Voltage

V

IL

V

SS

0.2 V

SSD

V

High-Level Output Voltage

V

OH

3

V

I

OH

= -3.0 mA,  V

DD

= 3.6V

Low-Level Output Voltage

V

OL

0.4

V

I

OL

= 4.0 mA, V

DD

= 3.6V

Input Leakage Current

I

LI

1

µA

0.050

0.100

µA

DIO pins only

TABLE 1-3:

TEMPERATURE SPECIFICATIONS

Electrical Specifications: Unless otherwise indicated, all parameters apply at AV

DD, 

DV

DD

 = 2.7 to 3.6V.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Temperature Ranges

Operating Temperature Range

T

A

-40

+125

°C

Storage Temperature Range

T

A

-65

+150

°C

Thermal Package Resistances

Thermal Resistance, 28LD 5x5 QFN

JA

35.3

°C/W

TABLE 1-1:

ELECTRICAL CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise indicated, all parameters apply at AV

DD, 

DV

DD

 = 2.7 to 3.6 V, T

A

 = -40°C to +125°C, 

MCLK = 4 MHz, PGA GAIN = 1.

Characteristic

Sym.

Min.

Typ.

Max.

Units

Test Conditions

Note 1:

Specification by design and characterization; not production tested.

2:

Calculated from reading the register values.

3:

V

IN

= 1V

PP

= 353 mV

RMS

@ 50/60 Hz.

4:

Applies to Voltage Sag and Voltage Surge Events Only.

5:

Variation applies to internal clock and UART only. All calculated output quantities are temperature compensated to the 
performance listed in the respective specification.

6:

Applies to all gains. Offset and gain errors depend on the PGA gain setting. See 

Section 2.0 “Typical Performance 

Curves”

 for typical performance.

7:

N = Value in the AccumulationInternalParameter register (0x005A). The default value of this register is 2 or T

CAL

= 80 ms 

for 50 Hz line.

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DS20005256A-page 7

MCP39F501

2.0

TYPICAL PERFORMANCE CURVES

Note: Unless otherwise indicated, AV

DD

= 3.3V, DV

DD

= 3.3V,  T

A

= +25°C, GAIN = 1, V

IN

= -0.5 dBFS at 60 Hz

.

FIGURE 2-1:

Active Power, Gain = 1.

FIGURE 2-2:

RMS Current, Gain = 1.

FIGURE 2-3:

Spectral Response.

FIGURE 2-4:

THD Histogram.

FIGURE 2-5:

THD vs. Temperature.

FIGURE 2-6:

SNR Histogram.

Note:

The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

-0.50%

-0.40%

-0.30%

-0.20%

-0.10%

0.00%

0.10%

0.20%

0.30%

0.40%

0.50%

0.01

0.1

1

10

100

1000

Measurement Error (%

)

Current Channel Input Amplitude (mV

PEAK

)

-0.100%

-0.050%

0.000%

0.050%

0.100%

0.1

1

10

100

1000

RMS Current Error (%

)

Input Voltage RMS (mV

PP

)

-200

-180

-160

-140

-120

-100

-80

-60

-40

-20

0

0

200 400 600 800 1000 1200 1400 1600 1800 2000

Amplitude (dB)

Frequency (Hz) 

f

IN

= -0.5 dBFS @ 60 Hz

f

D

= 3.9 ksps

16384 pt FFT
OSR = 256
Dithering = Maximum

-107.3 -107.1 -107.0 -106.8 -106.7 -106.5 -106.4 -106.2 -106.1 -105.9 -105.8

Frequency

 of 

Occurrence

Total Harmonic Distortion (-dBc)

-120

-110

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

-50

-25

0

25

50

75

100

125

150

T

o

tal Harominc 

Distortion (dBc)

Temperature (°C)

G = 1
G = 2
G = 4
G = 8
G = 16
G = 32

94.2 94.3 94.5 94.6 94.8 94.9 95.1 95.2 95.4 95.5

Frequency

 of 

Occurrence

Signal-to-Noise and Distortion Ratio (dB)

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MCP39F501

DS20005256A-page 8

 2013 Microchip Technology Inc.

Note: Unless otherwise indicated, AV

DD

= 3.3V, DV

DD

= 3.3V,  T

A

= +25°C, GAIN = 1, V

IN

= -0.5 dBFS at 60 Hz

.

FIGURE 2-7:

SINAD vs. Temperature.

FIGURE 2-8:

Gain Error vs. Temperature.

FIGURE 2-9:

Internal Voltage Reference 

vs. Temperature.

0

10

20

30

40

50

60

70

80

90

100

-50

-25

0

25

50

75

100

125

150

Signal-to-Noise and 

Distortion 

Ration (dB)

Temperature (°C)

G = 1
G = 2
G = 4
G = 8
G = 16
G = 32

-5

-4

-3

-2

-1

0

1

2

3

4

5

-50

-25

0

25

50

75

100

125

150

Gain Error 

(%

)

Temperature (°C)

G = 32

G = 16

G = 8

G = 4

G = 2

G = 1

1.1999

1.2000

1.2001

1.2002

1.2003

1.2004

1.2005

1.2006

1.2007

1.2008

-50

0

50

100

150

Internal V

o

ltage 

Reference 

(V)

Temperature (°C) 

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 2013 Microchip Technology Inc.

DS20005256A-page 9

MCP39F501

3.0

PIN DESCRIPTION

The description of the pins are listed in 

Table 3-1

.

 

TABLE 3-1:

PIN FUNCTION TABLE

MCP39F501

5x5 QFN

Symbol

Function

1

MODE/DIR

Single or Multiple Device mode with direction control for RS-485 drivers

2

NC

No Connect (must be left floating)

3

NC

No Connect (must be left floating)

4

UART_RX

UART Communication RX Pin

5

COMMON

A

Common pin A, to be connected to COMMON

B

6

OSCI

Oscillator Crystal Connection Pin or External Clock Input Pin 

7

OSCO

Oscillator Crystal Connection Pin

8

NC

No Connect (must be left floating)

9

NC

No Connect (must be left floating)

10

RESET

Reset Pin for Delta Sigma ADCs

11

AV

DD

Analog Power Supply Pin

12

UART_TX

UART Communication TX Pin

13

COMMON

B

Common pin B, to be connected to COMMON

A

14

A0/DIO0

Address Select Pin 0 / Configurable digital I/O 0

15

A1/DIO1

Address Select Pin 1 / Configurable digital I/O 1

16

I1+

Non-Inverting Current Channel Input for 24-bit 

 ADC

17

I1-

Inverting Current Channel Input for 24-bit 

 ADC 

18

V1-

Inverting Voltage Channel Input for 24-bit 

 ADC

19

V1+

Non-Inverting Voltage Channel Input for 24-bit 

 ADC

20

AN_IN/DIO2

Analog Input for SAR ADC / Configurable Digital Input/Output 2 Pin

21

A

GND

Analog Ground Pin, Return Path for internal analog circuitry

22

DIO3

Configurable Digital Input/Output 3

23

REFIN+/OUT

Non-Inverting Voltage Reference Input and Internal Reference Output Pin

24

D

GND

Digital Ground Pin, Return Path for internal digital circuitry

25

DV

DD

Power Supply Pin

26

MCLR

Master Clear for Device 

27

D

GND

Digital Ground Pin, Return Path for internal digital circuitry

28

DR

Data Ready (must be left floating)

29

EP

Exposed Thermal Pad (to be connected to D

GND

)

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MCP39F501

DS20005256A-page 10

 2013 Microchip Technology Inc.

3.1

Single/Multiple Device Mode and 
Direction Pin (MODE/DIR)

When using multiple devices on a single bus, this pin
should be tied to the DIR pin of the transceiver for
direction control. This will cause the A0/DIO0 and
A1/DIO1 pins to act as address pins A0,A1. If additional
devices are required, the Device Address register can
be programmed to allow for more than four devices.
For this operation, a 4.7 k

 pull-down resistor should

be connected to this pin.

If only a single device is being used, the MODE pin
should be driven high at power-on reset (POR), making
the A0/DIO0 and A1/DIO1 pins additional configurable
digital I/O (DIO).

3.2

UART Communication Pins 
(UART_TX, UART_RX)

The MCP39F501 device contains an asynchronous
full-duplex UART. The UART communication is 8 bits
with Start and Stop bit. See 

Section 4.2 “UART

Settings”

 for more information.

3.3

Common Pins (COMMON A and B)

The COMMON

and COMMON

pins are internal

connections for the MCP39F501. These two pins
should be connected together in the application.

3.4

Data Ready Pin (DR)

The data ready pin indicates if a new delta-sigma A/D
conversion result is ready to be processed. This pin is
for indication only and should be left floating. After each
conversion is finished, a low pulse will take place on the
Data Ready pin to indicate the conversion result is
ready and an interrupt is generated in the calculation
engine (CE). This pulse is synchronous with line
frequency and has a predefined and constant width.

3.5

Oscillator Pins (OSCO/OSCI)

OSCO and OSCI provide the master clock for the
device. Appropriate load capacitance should be
connected to these pins for proper operation. An
optional 4 MHz crystal can be connected to these pins.
If a crystal of external clock source is not detected, the
device will clock from the internal 4 MHz oscillator.

3.6

Reset Pin (RESET)

This pin is active-low and places the delta-sigma
ADCs, PGA, internal V

REF

 and other blocks associated

with the analog front-end in a reset state when pulled
low. This input is Schmitt-triggered.

3.7

Analog Power Supply Pin (AV

DD

)

AV

DD

 is the power supply pin for the analog circuitry

within the MCP39F501.

This pin requires appropriate bypass capacitors and
should be maintained to 2.7V and 3.6V for specified
operation. It is recommended to use 0.1 µF ceramic
capacitors.

3.8

Digital Power Supply Pin (DV

DD

)

DV

DD

 is the power supply pin for the digital circuitry

within the MCP39F501. This pin requires appropriate
bypass capacitors and should be maintained between
2.7V and 3.6V for specified operation. It is
recommended to use 0.1 µF ceramic capacitors.

3.9

Configurable Digital Input/Output 
Pins (DIOn)

These digital I/O pins can be configured to act as input
or as output events, such as alarm events or interrupt
flags, based on the device configuration. For more
information, see 

Section 8.0 “Configurable Digital

I/O Pins (DIO Configuration – 0x0046)”

.

3.10

24-Bit Delta Sigma ADC 
Differential Current Channel 
Input Pins (I1+/I1-)

I1- and I1+ are the two fully-differential current channel
inputs for the Delta-Sigma ADCs.

The linear and specified region of the channels are
dependent on the PGA gain. This region corresponds
to a differential voltage range of ±600 mV

PEAK

/GAIN

with V

REF

= 1.2V.

The maximum absolute voltage, with respect to A

GND

,

for each In+/- input pin is ±1V with no distortion and
±6V with no breaking after continuous voltage.

3.11

24-Bit Delta Sigma ADC 
Differential Voltage Channel 
Inputs (V1+/V1-)

V1- and V1+ are the two fully-differential voltage
channel inputs for the Delta-Sigma ADCs.

The linear and specified region of the channels are
dependent on the PGA gain. This region corresponds
to a differential voltage range of ±600 mV

PEAK

/GAIN

with V

REF

= 1.2V.

The maximum absolute voltage, with respect to A

GND

,

for each V

N

+/- input pin is ±1V with no distortion and

±6V, with no breaking after continuous voltage.

Note:

This pin is internally connected to the IRQ
of the calculation engine and should be
left floating.

Maker
Microchip Technology Inc.
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