1998-2011 Microchip Technology Inc.
DS21290F-page 1
MCP3201
Features
• 12-Bit Resolution
• ±1 LSB max DNL
• ±1 LSB max INL (MCP3201-B)
• ±2 LSB max INL (MCP3201-C)
• On-chip Sample and Hold
• SPI Serial Interface (modes 0,0 and 1,1)
• Single Supply Operation: 2.7V - 5.5V
• 100 ksps Maximum Sampling Rate at V
DD
= 5V
• 50 ksps Maximum Sampling Rate at V
DD
= 2.7V
• Low-Power CMOS Technology
• 500 nA Typical Standby Current, 2 µA Maximum
• 400 µA Maximum Active Current at 5V
• Industrial Temp Range: -40°C to +85°C
• 8-pin MSOP, PDIP, SOIC and TSSOP Packages
Applications
• Sensor Interface
• Process Control
• Data Acquisition
• Battery Operated Systems
Functional Block Diagram
Description
The Microchip Technology Inc. MCP3201 device is a
successive approximation 12-bit Analog-to-Digital
(A/D) Converter with on-board sample and hold
circuitry. The device provides a single pseudo-differen-
tial input. Differential Nonlinearity (DNL) is specified at
±1 LSB, and Integral Nonlinearity (INL) is offered in
±1 LSB (MCP3201-B) and ±2 LSB (MCP3201-C)
versions. Communication with the device is done using
a simple serial interface compatible with the SPI
protocol. The device is capable of sample rates of up to
100 ksps at a clock rate of 1.6 MHz. The MCP3201
device operates over a broad voltage range (2.7V-
5.5V). Low-current design permits operation with
typical standby and active currents of only 500 nA and
300 µA, respectively. The device is offered in 8-pin
MSOP, PDIP, TSSOP and 150 mil SOIC packages.
Package Types
Comparator
Sample
and
Hold
12-Bit SAR
DAC
Control Logic
CS/SHDN
V
REF
IN+
IN-
V
SS
V
DD
CLK
D
OUT
Shift
Register
V
REF
IN+
IN–
V
SS
V
DD
CLK
D
OUT
CS/SHDN
1
2
3
4
8
7
6
5
MSOP, PDIP, SOIC, TSSOP
MCP
3
20
1
2.7V 12-Bit A/D Converter with SPI Serial Interface
MCP3201
DS21290F-page 2
1998-2011 Microchip Technology Inc.
NOTES:
1998-2011 Microchip Technology Inc.
DS21290F-page 3
MCP3201
1.0
ELECTRICAL
CHARACTERISTICS
1.1
Maximum Ratings†
V
DD
...................................................................................7.0V
All inputs and outputs w.r.t. V
SS
................ -0.6V to V
DD
+0.6V
Storage temperature .....................................-65°C to +150°C
Ambient temp. with power applied ................-65°C to +125°C
ESD protection on all pins (HBM) .................................> 4 kV
†Notice:
Stresses above those listed under “Maximum
ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
ELECTRICAL CHARACTERISTICS
Electrical Specifications:
All parameters apply at V
DD
= 5V, V
SS
= 0V, V
REF
= 5V, T
A
= -40°C to +85°C, f
SAMPLE
= 100 ksps, and
fCLK = 16*f
SAMPLE
, unless otherwise noted.
Parameter
Sym
Min
Typ
Max
Units
Conditions
Conversion Rate:
Conversion Time
t
CONV
—
—
12
clock
cycles
Analog Input Sample Time
t
SAMPLE
1.5
clock
cycles
Throughput Rate
f
SAMPLE
—
—
100
50
ksps
ksps
V
DD
= V
REF
= 5V
V
DD
= V
REF
= 2.7V
DC Accuracy:
Resolution
12
bits
Integral Nonlinearity
INL
—
—
±0.75
±1
±1
±2
LSB
LSB
MCP3201-B
MCP3201-C
Differential Nonlinearity
DNL
—
±0.5
±1
LSB
No missing codes over
temperature
Offset Error
—
±1.25
±3
LSB
Gain Error
—
±1.25
±5
LSB
Dynamic Performance:
Total Harmonic Distortion
THD
—
-82
—
dB
V
IN
= 0.1V to 4.9V@1 kHz
Signal to Noise and Distortion
(SINAD)
SINAD
—
72
—
dB
V
IN
= 0.1V to 4.9V@1 kHz
Spurious Free Dynamic Range
SFDR
—
86
—
dB
V
IN
= 0.1V to 4.9V@1 kHz
Reference Input:
Voltage Range
0.25
—
V
DD
V
Note 2
Current Drain
—
—
100
.001
150
3
µA
µA
CS = V
DD
= 5V
Analog Inputs:
Input Voltage Range (IN+)
IN+
IN-
—
V
REF
+IN-
V
Input Voltage Range (IN-)
IN-
V
SS
-100
V
SS
+100
mV
Leakage Current
—
0.001
±1
µA
Switch Resistance
R
SS
—
1K
—
W
See
Figure 4-1
Sample Capacitor
C
SAMPLE
—
20
—
pF
See
Figure 4-1
Digital Input/Output:
Data Coding Format
Straight Binary
High Level Input Voltage
V
IH
0.7 V
DD
—
—
V
Low Level Input Voltage
V
IL
—
—
0.3 V
DD
V
Note 1:
This parameter is established by characterization and not 100% tested.
2:
See graph that relates linearity performance to V
REF
level.
3:
Because the sample cap will eventually lose charge, effective clock rates below 10 kHz can affect linearity performance,
especially at elevated temperatures. See
Section 6.2 “Maintaining Minimum Clock Speed”
for more information.
MCP3201
DS21290F-page 4
1998-2011 Microchip Technology Inc.
TEMPERATURE CHARACTERISTICS
High Level Output Voltage
V
OH
4.1
—
—
V
I
OH
= -1 mA, V
DD
= 4.5V
Low Level Output Voltage
V
OL
—
—
0.4
V
I
OL
= 1 mA, V
DD
= 4.5V
Input Leakage Current
I
LI
-10
—
10
µA
V
IN
= V
SS
or V
DD
Output Leakage Current
I
LO
-10
—
10
µA
V
OUT
= V
SS
or V
DD
Pin Capacitance
(all inputs/outputs)
C
IN
, C
OUT
—
—
10
pF
V
DD
= 5.0V (
Note 1
)
T
A
= +25°C, f = 1 MHz
Timing Parameters:
Clock Frequency
f
CLK
—
—
—
—
1.6
0.8
MHz
MHz
V
DD
= 5V (
Note 3
)
V
DD
= 2.7V (
Note 3
)
Clock High Time
t
HI
312
—
—
ns
Clock Low Time
t
LO
312
—
—
ns
CS Fall To First Rising CLK Edge
t
SUCS
100
—
—
ns
CLK Fall To Output Data Valid
t
DO
—
—
200
ns
See Test Circuits,
Figure 1-2
CLK Fall To Output Enable
t
EN
—
—
200
ns
See Test Circuits,
Figure 1-2
CS Rise To Output Disable
t
DIS
—
—
100
ns
See Test Circuits,
Figure 1-2
(
Note 1
)
CS Disable Time
t
CSH
625
—
—
ns
D
OUT
Rise Time
t
R
—
—
100
ns
See Test Circuits,
Figure 1-2
(
Note 1
)
D
OUT
Fall Time
t
F
—
—
100
ns
See Test Circuits,
Figure 1-2
(
Note 1
)
Power Requirements:
Operating Voltage
V
DD
2.7
—
5.5
V
Operating Current
I
DD
—
—
300
210
400
—
µA
µA
V
DD
= 5.0V, D
OUT
unloaded
V
DD
= 2.7V, D
OUT
unloaded
Standby Current
I
DDS
—
0.5
2
µA
CS = V
DD
= 5.0V
Electrical Specifications:
Unless otherwise indicated, V
DD
= +2.7V to +5.5V, V
SS
= GND.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
T
A
-40
—
+85
°C
Operating Temperature Range
T
A
-40
—
+85
°C
Storage Temperature Range
T
A
-65
—
+150
°C
Thermal Package Resistances
Thermal Resistance, 8L-MSOP
JA
—
211
—
°C/W
Thermal Resistance, 8L-PDIP
JA
—
89.5
—
°C/W
Thermal Resistance, 8L-SOIC
JA
—
149.5
—
°C/W
Thermal Resistance, 8L-TSSOP
JA
—
139
—
°C/W
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications:
All parameters apply at V
DD
= 5V, V
SS
= 0V, V
REF
= 5V, T
A
= -40°C to +85°C, f
SAMPLE
= 100 ksps, and
fCLK = 16*f
SAMPLE
, unless otherwise noted.
Parameter
Sym
Min
Typ
Max
Units
Conditions
Note 1:
This parameter is established by characterization and not 100% tested.
2:
See graph that relates linearity performance to V
REF
level.
3:
Because the sample cap will eventually lose charge, effective clock rates below 10 kHz can affect linearity performance,
especially at elevated temperatures. See
Section 6.2 “Maintaining Minimum Clock Speed”
for more information.
1998-2011 Microchip Technology Inc.
DS21290F-page 5
MCP3201
FIGURE 1-1:
Serial Timing.
FIGURE 1-2:
Test Circuits.
CS
CLK
t
SUCS
t
CSH
t
HI
t
LO
D
OUT
t
EN
t
DO
t
R
t
F
LSB
MSB OUT
t
DIS
NULL BIT
HI-Z
HI-Z
V
IH
t
DIS
CS
D
OUT
Waveform 1*
D
OUT
Waveform 2†
90%
10%
* Waveform 1 is for an output with internal condi-
tions such that the output is high, unless disabled
by the output control.
† Waveform 2 is for an output with internal condi-
tions such that the output is low, unless disabled
by the output control.
Voltage Waveforms for t
DIS
Test Point
1.4V
D
OUT
Load circuit for t
R
, t
F
, t
DO
3 kΩ
C
L
= 30 pF
Test Point
D
OUT
Load circuit for t
DIS
and t
EN
3 kΩ
30 pF
t
DIS
Waveform 2
t
DIS
Waveform 1
CS
CLK
D
OUT
t
EN
1
2
B9
Voltage Waveforms for t
EN
t
EN
Waveform
V
DD
V
DD
/2
V
SS
3
4
D
OUT
t
R
Voltage Waveforms for t
R
, t
F
CLK
D
OUT
t
DO
Voltage Waveforms for t
DO
t
F
V
OH
V
OL
MCP3201
DS21290F-page 6
1998-2011 Microchip Technology Inc.
NOTES:
1998-2011 Microchip Technology Inc.
DS21290F-page 7
MCP3201
2.0
TYPICAL PERFORMANCE CHARACTERISTICS
Note:
Unless otherwise indicated, V
DD
= V
REF
= 5V, V
SS
= 0V, f
SAMPLE
= 100 ksps, f
CLK
= 16*f
SAMPLE
, T
A
= +25°C.
FIGURE 2-1:
Integral Nonlinearity (INL)
vs. Sample Rate.
FIGURE 2-2:
Integral Nonlinearity (INL)
vs. V
REF
.
FIGURE 2-3:
Integral Nonlinearity (INL)
vs. Code (Representative Part).
FIGURE 2-4:
Integral Nonlinearity (INL)
vs. Sample Rate (V
DD
= 2.7V).
FIGURE 2-5:
Integral Nonlinearity (INL)
vs. V
REF
(V
DD
= 2.7V).
FIGURE 2-6:
Integral Nonlinearity (INL)
vs. Code (Representative Part, V
DD
= 2.7V).
Note:
The graphs provided following this note are a statistical summary based on a limited number of samples
and are provided for informational purposes only. The performance characteristics listed herein are not
tested or guaranteed. In some graphs, the data presented may be outside the specified operating range
(e.g., outside specified power supply range) and therefore outside the warranted range.
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
0
25
50
75
100
125
150
Sample Rate (ksps)
IN
L
(
L
S
B
)
Positive INL
Negative INL
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
0
1
2
3
4
5
V
REF
(V)
IN
L
(L
S
B
)
Positive INL
Negative INL
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
0
512
1024 1536 2048 2560 3072 3584 4096
Digital Code
INL (
L
S
B
)
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
0
20
40
60
80
100
Sample Rate (ksps)
INL
(
L
S
B
)
V
DD
= V
REF
= 2.7V
Positive INL
Negative INL
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
REF
(V)
IN
L
(
L
S
B
)
Positive INL
Negative INL
V
DD
= 2.7V
F
SAMPLE
= 50 ksps
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
0
512 1024 1536 2048 2560 3072 3584 4096
Digital Code
IN
L
(
L
S
B
)
V
DD
= V
REF
= 2.7V
F
SAMPLE
= 50 ksps
MCP3201
DS21290F-page 8
1998-2011 Microchip Technology Inc.
Note:
Unless otherwise indicated, V
DD
= V
REF
= 5V, V
SS
= 0V, f
SAMPLE
= 100 ksps, f
CLK
= 16*f
SAMPLE
, T
A
= +25°C.
FIGURE 2-7:
Integral Nonlinearity (INL)
vs. Temperature.
FIGURE 2-8:
Differential Nonlinearity
(DNL) vs. Sample Rate.
FIGURE 2-9:
Differential Nonlinearity
(DNL) vs. V
REF
.
FIGURE 2-10:
Integral Nonlinearity (INL)
vs. Temperature (V
DD
= 2.7V).
FIGURE 2-11:
Differential Nonlinearity
(DNL) vs. Sample Rate (V
DD
= 2.7V).
FIGURE 2-12:
Differential Nonlinearity
(DNL) vs. V
REF
(V
DD
= 2.7V).
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
-50
-25
0
25
50
75
100
Temperature (°C)
IN
L
(
L
S
B
)
Positive INL
Negative INL
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
0
25
50
75
100
125
150
Sample Rate (ksps)
DNL
(
L
S
B
)
Positive DNL
Negative DNL
-2.0
-1.0
0.0
1.0
2.0
3.0
0
1
2
3
4
5
V
REF
(V)
DN
L (LS
B
)
Negative DNL
Positive DNL
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
-50
-25
0
25
50
75
100
Temperature (°C)
IN
L
(
L
S
B
)
Positive INL
V
DD
= V
REF
= 2.7V
F
SAMPLE
= 50 ksps
Negative INL
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
0
20
40
60
80
100
Sample Rate (ksps)
DNL
(
L
S
B
)
V
DD
= V
REF
= 2.7V
Positive DNL
Negative DNL
-3.0
-2.0
-1.0
0.0
1.0
2.0
3.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
REF
(V)
DNL (
L
S
B
)
Positive DNL
Negative DNL
V
DD
= 2.7V
F
SAMPLE
= 50 ksps
1998-2011 Microchip Technology Inc.
DS21290F-page 9
MCP3201
Note:
Unless otherwise indicated, V
DD
= V
REF
= 5V, V
SS
= 0V, f
SAMPLE
= 100 ksps, f
CLK
= 16*f
SAMPLE
, T
A
= +25°C.
FIGURE 2-13:
Differential Nonlinearity
(DNL) vs. Code (Representative Part).
FIGURE 2-14:
Differential Nonlinearity
(DNL) vs. Temperature.
FIGURE 2-15:
Gain Error vs. V
REF
.
FIGURE 2-16:
Differential Nonlinearity
(DNL) vs. Code (Representative Part,
V
DD
= 2.7V).
FIGURE 2-17:
Differential Nonlinearity
(DNL) vs. Temperature (V
DD
= 2.7V).
FIGURE 2-18:
Offset Error vs. V
REF
.
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
0
512
1024 1536 2048 2560 3072 3584 4096
Digital Code
DN
L
(
L
S
B
)
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
-50
-25
0
25
50
75
100
Temperature (°C)
DNL
(
L
S
B
)
Positive DNL
Negative DNL
-2
-1
0
1
2
3
4
5
0
1
2
3
4
5
V
REF
(V)
Ga
in
Erro
r (L
SB)
V
DD
= 2.7V
F
SAMPLE
= 50 ksps
V
DD
= 5V
F
SAMPLE
= 100 ksps
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
0
512 1024 1536 2048 2560 3072 3584 4096
Digital Code
DN
L
(
L
S
B
)
V
DD
= V
REF
= 2.7V
F
SAMPLE
= 50 ksps
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
-50
-25
0
25
50
75
100
Temperature (°C)
DNL
(
L
S
B
)
Positive DNL
V
DD
= 2.7V
F
SAMPLE
= 50ksps
Negative DNL
0
2
4
6
8
10
12
14
16
18
20
0
1
2
3
4
5
V
REF
(V)
Of
fs
e
t Error (
L
SB
)
V
DD
= 5V
F
SAMPLE
= 100 ksps
V
DD
= 2.7V
F
SAMPLE
= 50ksps
MCP3201
DS21290F-page 10
1998-2011 Microchip Technology Inc.
Note:
Unless otherwise indicated, V
DD
= V
REF
= 5V, V
SS
= 0V, f
SAMPLE
= 100 ksps, f
CLK
= 16*f
SAMPLE
, T
A
= +25°C.
FIGURE 2-19:
Gain Error vs. Temperature.
FIGURE 2-20:
Signal-to-Noise Ratio (SNR)
vs. Input Frequency.
FIGURE 2-21:
Total Harmonic Distortion
(THD) vs. Input Frequency.
FIGURE 2-22:
Offset Error vs.
Temperature.
FIGURE 2-23:
Signal-to-Noise and
Distortion (SINAD) vs. Input Frequency.
FIGURE 2-24:
Signal-to-Noise and
Distortion (SINAD) vs. Input Signal Level.
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
-50
-25
0
25
50
75
100
Temperature (°C)
Ga
in
E
rr
o
r (
L
S
B
)
V
DD
= V
REF
= 5V
F
SAMPLE
= 100 ksps
V
DD
= V
REF
= 2.7V
F
SAMPLE
= 50 ksps
0
10
20
30
40
50
60
70
80
90
100
1
10
100
Input Frequency (kHz)
S
NR (
d
B
)
V
DD
= V
REF
= 2.7V
F
SAMPLE
= 50 ksps
V
DD
= V
REF
= 5V
F
SAMPLE
= 100 ksps
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
1
10
100
Input Frequency (kHz)
TH
D
(
d
B
)
V
DD
= V
REF
= 2.7V
F
SAMPLE
= 50 ksps
V
DD
= V
REF
= 5V, F
SAMPLE
= 100 ksps
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50
-25
0
25
50
75
100
Temperature (°C)
O
ff
s
e
t Er
ro
r
(L
SB)
V
DD
= V
REF
= 5V
F
SAMPLE
= 100 ksps
V
DD
= V
REF
= 2.7V
F
SAMPLE
= 50 ksps
0
10
20
30
40
50
60
70
80
90
100
1
10
100
Input Frequency (kHz)
S
INA
D (
d
B)
V
DD
= V
REF
= 2.7V
F
SAMPLE
= 50 ksps
V
DD
= V
REF
= 5V
F
SAMPLE
= 100 ksps
0
10
20
30
40
50
60
70
80
-40
-35
-30
-25
-20
-15
-10
-5
0
Input Signal Level (dB)
S
INAD
(
d
B)
V
DD
= V
REF
= 2.7V
F
SAMPLE
= 50 ksps
V
DD
= V
REF
= 5V
F
SAMPLE
= 100 ksps