©
2007 Microchip Technology Inc.
DS21293C-page 1
MCP3001
Features
• 10-bit resolution
• ±1 LSB max DNL
• ±1 LSB max INL
• On-chip sample and hold
• SPI™ serial interface (modes 0,0 and 1,1)
• Single supply operation: 2.7V - 5.5V
• 200 ksps sampling rate at 5V
• 75 ksps sampling rate at 2.7V
• Low power CMOS technology
- 5 nA typical standby current, 2 µA max
- 500 µA max active current at 5V
• Industrial temp range: -40°C to +85°C
• 8-pin PDIP, SOIC, MSOP and TSSOP packages
Applications
• Sensor Interface
• Process Control
• Data Acquisition
• Battery Operated Systems
Description
The Microchip Technology Inc. MCP3001 is a succes-
sive approximation 10-bit A/D converter (ADC) with on-
board sample and hold circuitry. The device provides a
single pseudo-differential input. Differential Nonlinear-
ity (DNL) and Integral Nonlinearity (INL) are both spec-
ified at ±1 LSB max. Communication with the device is
done using a simple serial interface compatible with the
SPI protocol. The device is capable of sample rates up
to 200 ksps at a clock rate of 2.8 MHz. The MCP3001
operates over a broad voltage range (2.7V - 5.5V).
Low current design permits operation with a typical
standby current of only 5 nA and a typical active current
of 400 µA. The device is offered in 8-pin PDIP, MSOP,
TSSOP and 150 mil SOIC packages.
Package Types
Functional Block Diagram
V
REF
IN+
IN–
V
SS
V
DD
CLK
D
OUT
CS/SHDN
1
2
3
4
8
7
6
5
PDIP, MSOP, SOIC, TSSOP
MC
P3
001
Illustration not to scale
Comparator
Sample
and
Hold
10-Bit SAR
DAC
Control Logic
CS/SHDN
V
REF
IN+
IN-
V
SS
V
DD
CLK
D
OUT
Shift
Register
2.7V 10-Bit A/D Converter with SPI™ Serial Interface
SPI™ is a trademark of Motorola Inc.
MCP3001
DS21293C-page 2
©
2007 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
1.1
Maximum Ratings*
V
DD
.........................................................................7.0V
All inputs and outputs w.r.t. V
SS
...... -0.6V to V
DD
+0.6V
Storage temperature ..........................-65°C to +150°C
Ambient temp. with power applied .....-65°C to +125°C
ESD protection on all pins (HBM)........................ > 4kV
*Notice: Stresses above those listed under “Maximum ratings”
may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at those or
any other conditions above those indicated in the operational
listings of this specification is not implied. Exposure to maxi-
mum rating conditions for extended periods may affect device
reliability.
PIN FUNCTION TABLE
ELECTRICAL CHARACTERISTICS
Name
Function
V
DD
+2.7V to 5.5V Power Supply
V
SS
Ground
IN+
Positive Analog Input
IN-
Negative Analog Input
CLK
Serial Clock
D
OUT
Serial Data Out
CS/SHDN
Chip Select/Shutdown Input
V
REF
Reference Voltage Input
All parameters apply at V
DD
= 5V, V
SS
= 0V, V
REF
= 5V, T
AMB
= -40°C to +85°C, f
SAMPLE
= 200 ksps and f
CLK
= 14*f
SAMPLE
,
unless otherwise noted. Typical values apply for V
DD
= 5V, T
AMB
=25°C, unless otherwise noted.
Parameter
Sym
Min
Typ
Max
Units
Conditions
Conversion Rate:
Conversion Time
t
CONV
—
—
10
clock
cycles
Analog Input Sample Time
t
SAMPLE
1.5
clock
cycles
Throughput Rate
f
SAMPLE
—
—
200
75
ksps
ksps
V
DD
= V
REF
= 5V
V
DD
= V
REF
= 2.7V
DC Accuracy:
Resolution
10
bits
Integral Nonlinearity
INL
—
±0.5
±1
LSB
Differential Nonlinearity
DNL
—
±0.25
±1
LSB
No missing codes over tem-
perature
Offset Error
—
—
±1.5
LSB
Gain Error
—
—
±1
LSB
Dynamic Performance:
Total Harmonic Distortion
THD
—
-76
—
dB
V
IN
= 0.1V to 4.9V@1 kHz
Signal to Noise and Distortion
(SINAD)
SINAD
—
61
—
dB
V
IN
= 0.1V to 4.9V@1 kHz
Spurious Free Dynamic Range
SFDR
—
80
—
dB
V
IN
= 0.1V to 4.9V@1 kHz
Reference Input:
Voltage Range
V
REF
0.25
—
V
DD
V
Note 2
Current Drain
I
REF
—
90
0.001
150
3
µA
µA
CS = V
DD
= 5V
Note 1: This parameter is guaranteed by characterization and not 100% tested.
2: See graph that relates linearity performance to V
REF
level.
3: Because the sample cap will eventually lose charge, clock rates below 10 kHz can affect linearity perfor-
mance, especially at elevated temperatures.
©
2007 Microchip Technology Inc.
DS21293C-page 3
MCP3001
Temperature Ranges:
Specified Temperature Range
T
A
-40
—
+85
°C
Operating Temperature Range
T
A
-40
—
+85
°C
Storage Temperature Range
T
A
-65
—
+150
°C
Thermal Package Resistance:
Thermal Resistance, 8L-PDIP
θ
JA
—
85
—
°C/W
Thermal Resistance, 8L-SOIC
θ
JA
—
163
—
°C/W
Thermal Resistance, 8L-MSOP
θ
JA
—
206
—
°C/W
Thermal Resistance, 8L-TSSOP
θ
JA
—
—
°C/W
Analog Inputs:
Input Voltage Range (IN+)
IN+
IN-
—
V
REF
+IN-
V
Input Voltage Range (IN-)
IN-
V
SS
-100
—
V
SS
+100
mV
Leakage Current
—
0.001
±1
µA
Switch Resistance
R
SS
—
1K
—
Ω
See Figure 4-1
Sample Capacitor
C
SAMPLE
—
20
—
pF
See Figure 4-1
Digital Input/Output:
Data Coding Format
Straight Binary
High Level Input Voltage
V
IH
0.7 V
DD
—
—
V
Low Level Input Voltage
V
IL
—
—
0.3 V
DD
V
High Level Output Voltage
V
OH
4.1
—
—
V
I
OH
= -1 mA, V
DD
= 4.5V
Low Level Output Voltage
V
OL
—
—
0.4
V
I
OL
= 1 mA, V
DD
= 4.5V
Input Leakage Current
I
LI
-10
—
10
µA
V
IN
= V
SS
or V
DD
Output Leakage Current
I
LO
-10
—
10
µA
V
OUT
= V
SS
or V
DD
Pin Capacitance
(all inputs/outputs)
C
IN
, C
OUT
—
—
10
pF
V
DD
= 5.0V (Note 1)
T
AMB
= 25°C, f = 1 MHz
Timing Parameters:
Clock Frequency
f
CLK
—
—
2.8
1.05
MHz
MHz
V
DD
= 5V (Note 3)
V
DD
= 2.7V (Note 3)
Clock High Time
t
HI
160
—
—
ns
Clock Low Time
t
LO
160
—
—
ns
CS Fall To First Rising CLK Edge
t
SUCS
100
—
—
ns
CLK Fall To Output Data Valid
t
DO
—
—
125
200
ns
ns
V
DD
= 5V, See Figure 1-2
V
DD
= 2.7, See Figure 1-2
CLK Fall To Output Enable
t
EN
—
—
125
200
ns
ns
V
DD
= 5V, See Figure 1-2
V
DD
= 2.7, See Figure 1-2
CS Rise To Output Disable
t
DIS
—
—
100
ns
See test circuits, Figure 1-2
(Note 1)
CS Disable Time
t
CSH
350
—
—
ns
D
OUT
Rise Time
t
R
—
—
100
ns
See test circuits, Figure 1-2
(Note 1)
D
OUT
Fall Time
t
F
—
—
100
ns
See test circuits, Figure 1-2
(Note 1)
All parameters apply at V
DD
= 5V, V
SS
= 0V, V
REF
= 5V, T
AMB
= -40°C to +85°C, f
SAMPLE
= 200 ksps and f
CLK
= 14*f
SAMPLE
,
unless otherwise noted. Typical values apply for V
DD
= 5V, T
AMB
=25°C, unless otherwise noted.
Parameter
Sym
Min
Typ
Max
Units
Conditions
Note 1: This parameter is guaranteed by characterization and not 100% tested.
2: See graph that relates linearity performance to V
REF
level.
3: Because the sample cap will eventually lose charge, clock rates below 10 kHz can affect linearity perfor-
mance, especially at elevated temperatures.
MCP3001
DS21293C-page 4
©
2007 Microchip Technology Inc.
FIGURE 1-1:
Serial Timing.
Power Requirements:
Operating Voltage
V
DD
2.7
—
5.5
V
Operating Current
I
DD
—
400
210
500
µA
µA
V
DD
= 5.0V, D
OUT
unloaded
V
DD
= 2.7V, D
OUT
unloaded
Standby Current
I
DDS
—
0.005
2
µA
CS = V
DD
= 5.0V
All parameters apply at V
DD
= 5V, V
SS
= 0V, V
REF
= 5V, T
AMB
= -40°C to +85°C, f
SAMPLE
= 200 ksps and f
CLK
= 14*f
SAMPLE
,
unless otherwise noted. Typical values apply for V
DD
= 5V, T
AMB
=25°C, unless otherwise noted.
Parameter
Sym
Min
Typ
Max
Units
Conditions
Note 1: This parameter is guaranteed by characterization and not 100% tested.
2: See graph that relates linearity performance to V
REF
level.
3: Because the sample cap will eventually lose charge, clock rates below 10 kHz can affect linearity perfor-
mance, especially at elevated temperatures.
CS
CLK
t
SUCS
t
CSH
t
HI
t
LO
D
OUT
t
EN
t
DO
t
R
t
F
LSB
MSB OUT
t
DIS
Null BIT
HI-Z
HI-Z
©
2007 Microchip Technology Inc.
DS21293C-page 5
MCP3001
FIGURE 1-2:
Test Circuits.
V
IH
t
DIS
CS
D
OUT
Waveform 1*
D
OUT
Waveform 2†
90%
10%
* Waveform 1 is for an output with internal condi-
tions such that the output is high, unless disabled
by the output control.
† Waveform 2 is for an output with internal condi-
tions such that the output is low, unless disabled
by the output control.
Voltage Waveforms for t
DIS
Test Point
1.4V
D
OUT
Load circuit for t
R
, t
F
, t
DO
3 k
Ω
C
L
= 30 pF
Test Point
D
OUT
Load circuit for t
DIS
and t
EN
3 k
Ω
30 pF
t
DIS
Waveform 2
t
DIS
Waveform 1
CS
CLK
D
OUT
t
EN
1
2
B9
Voltage Waveforms for t
EN
t
EN
Waveform
V
DD
V
DD
/2
V
SS
3
4
D
OUT
t
R
Voltage Waveforms for t
R
, t
F
CLK
D
OUT
t
DO
Voltage Waveforms for t
DO
t
F
V
OH
V
OL
MCP3001
DS21293C-page 6
©
2007 Microchip Technology Inc.
2.0
TYPICAL PERFORMANCE CHARACTERISTICS
Note: Unless otherwise indicated, V
DD
= V
REF
= 5V, f
SAMPLE
= 200 ksps, f
CLK
= 14*Sample Rate, T
A
= 25°C
FIGURE 2-1:
Integral Nonlinearity (INL) vs. Sample
Rate.
FIGURE 2-2:
Integral Nonlinearity (INL) vs. V
REF
.
FIGURE 2-3:
Integral Nonlinearity (INL) vs. Code
(Representative Part).
FIGURE 2-4:
Integral Nonlinearity (INL) vs. Sample
Rate (V
DD
= 2.7V).
FIGURE 2-5:
Integral Nonlinearity (INL) vs. V
REF
(V
DD
= 2.7V).
FIGURE 2-6:
Integral Nonlinearity (INL) vs. Code
(Representative Part, V
DD
= 2.7V).
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0
25
50
75 100 125 150 175 200 225 250
Sample Rate (ksps)
IN
L
(L
S
B
)
Positive INL
Negative INL
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
6
V
REF
(V)
IN
L (
L
S
B
)
Positive INL
Negative INL
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0.5
0
128
256
384
512
640
768
896
1024
Digital Code
INL (
L
S
B
)
V
DD
= V
REF
= 5V
f
SAMPLE
= 200 ksps
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0
25
50
75
100
Sample Rate (ksps)
IN
L
(L
S
B
)
Positive INL
Negative INL
V
DD
= V
REF
= 2.7V
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
REF
(V)
IN
L (
L
S
B
)
Positive INL
Negative INL
V
DD
= V
REF
= 2.7V
f
SAMPLE
= 75 ksps
-0.50
-0.40
-0.30
-0.20
-0.10
0.00
0.10
0.20
0.30
0.40
0.50
0
128
256
384
512
640
768
896
1024
Digital Code
INL (
L
S
B
)
V
DD
= V
REF
= 2.7V
f
SAMPLE
= 75 ksps
©
2007 Microchip Technology Inc.
DS21293C-page 7
MCP3001
Note: Unless otherwise indicated, V
DD
= V
REF
= 5V, f
SAMPLE
= 200 ksps, f
CLK
= 14*Sample Rate,T
A
= 25°C
FIGURE 2-7:
Integral Nonlinearity (INL) vs.
Temperature.
FIGURE 2-8:
Differential Nonlinearity (DNL) vs.
Sample Rate.
FIGURE 2-9:
Differential Nonlinearity (DNL) vs.
V
REF
.
FIGURE 2-10: Integral Nonlinearity (INL) vs.
Temperature (V
DD
= 2.7V).
FIGURE 2-11: Differential Nonlinearity (DNL) vs.
Sample Rate (V
DD
= 2.7V).
FIGURE 2-12: Differential Nonlinearity (DNL) vs. V
REF
(V
DD
= 2.7V).
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
-50
-25
0
25
50
75
100
Temperature (°C)
IN
L
(
L
SB
)
Positive INL
Negative INL
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0
25
50
75
100
125
150
175
200
225
250
Sample Rate (ksps)
DNL (
L
S
B
)
Positive DNL
Negative DNL
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
V
REF
(V)
DNL (LS
B
)
Negative DNL
Positive DNL
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
-50
-25
0
25
50
75
100
Temperature (°C)
INL (
L
S
B
)
Positive INL
V
DD
= V
REF
= 2.7V
f
SAMPLE
= 75 ksps
Negative INL
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0
25
50
75
100
Sample Rate (ksps)
DNL
(L
S
B
)
Positive DNL
Negative DNL
V
DD
= V
REF
= 2.7V
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
REF
(V)
DNL (LS
B
)
Positive DNL
Negative DNL
V
DD
= V
REF
= 2.7V
f
SAMPLE
= 75 ksps
MCP3001
DS21293C-page 8
©
2007 Microchip Technology Inc.
Note: Unless otherwise indicated, V
DD
= V
REF
= 5V, f
SAMPLE
= 200 ksps, f
CLK
= 14*Sample Rate,T
A
= 25°C
FIGURE 2-13: Differential Nonlinearity (DNL) vs.
Code (Representative Part).
FIGURE 2-14: Differential Nonlinearity (DNL) vs.
Temperature.
FIGURE 2-15: Gain Error vs. V
REF
.
FIGURE 2-16: Differential Nonlinearity (DNL) vs.
Code (Representative Part, V
DD
= 2.7V).
FIGURE 2-17: Differential Nonlinearity (DNL) vs.
Temperature (V
DD
= 2.7V).
FIGURE 2-18: Offset Error vs. V
REF
.
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0.5
0
128
256
384
512
640
768
896
1024
Digital Code
DNL (LS
B
)
V
DD
= V
REF
= 5V
f
SAMPLE
= 200 ksps
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
-50
-25
0
25
50
75
100
Temperature (°C)
DNL
(
L
S
B
)
Positive DNL
Negative DNL
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
V
REF
(V)
Ga
in Error (
L
SB
)
V
DD
= 2.7V
f
SAMPLE
= 75 ksps
V
DD
= 5V
f
SAMPLE
= 200 ksps
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0.5
0
128
256
384
512
640
768
896
1024
Digital Code
DNL (LS
B
)
V
DD
= V
REF
= 2.7V
f
SAMPLE
= 75 ksps
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
-50
-25
0
25
50
75
100
Temperature (°C)
DNL (LS
B
)
Positive DNL
V
DD
= V
REF
= 2.7V
f
SAMPLE
= 75 ksps
Negative DNL
0
1
2
3
4
5
6
7
8
0.0
1.0
2.0
3.0
4.0
5.0
V
REF
(V)
Of
fs
e
t Error (
L
SB
)
V
DD
= 5V
f
SAMPLE
= 200 ksps
V
DD
= 2.7V
f
SAMPLE
= 75 ksps
©
2007 Microchip Technology Inc.
DS21293C-page 9
MCP3001
Note: Unless otherwise indicated, V
DD
= V
REF
= 5V, f
SAMPLE
= 200 ksps, f
CLK
= 14*Sample Rate,T
A
= 25°C
FIGURE 2-19: Gain Error vs. Temperature.
FIGURE 2-20: Signal to Noise Ratio (SNR) vs. Input
Frequency.
FIGURE 2-21: Total Harmonic Distortion (THD) vs.
Input Frequency.
FIGURE 2-22: Offset Error vs. Temperature.
FIGURE 2-23: Signal to Noise Ratio and Distortion
(SINAD) vs. Input Frequency.
FIGURE 2-24: Signal to Noise and Distortion
(SINAD) vs. Input Signal Level.
-0.4
-0.3
-0.2
-0.1
0.0
0.1
-50
-25
0
25
50
75
100
Temperature (°C)
Ga
in Error (
L
SB
)
V
DD
= V
REF
= 5V
f
SAMPLE
= 200 ksps
V
DD
= V
REF
= 2.7V
f
SAMPLE
= 75 ksps
0
10
20
30
40
50
60
70
1
10
100
Input Frequency (kHz)
SNR (d
B)
V
DD
= V
REF
= 2.7V
f
SAMPLE
= 75 ksps
V
DD
= V
REF
= 5V
f
SAMPLE
= 200 ksps
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
1
10
100
Input Frequency (kHz)
T
HD (
d
B)
V
DD
= V
REF
= 5V
f
SAMPLE
= 200 ksps
V
DD
= V
REF
= 2.7V
f
SAMPLE
= 75 ksps
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-50
-25
0
25
50
75
100
Temperature (°C)
Of
fset
Erro
r (
L
SB
)
V
DD
= V
REF
= 5V
f
SAMPLE
= 200 ksps
V
DD
= V
REF
= 2.7V
f
SAMPLE
= 75 ksps
0
10
20
30
40
50
60
70
1
10
100
Input Frequency (kHz)
S
INAD (
d
B
)
V
DD
= V
REF
= 2.7V
f
SAMPLE
= 75 ksps
V
DD
= V
REF
= 5V
f
SAMPLE
= 200 ksps
0
10
20
30
40
50
60
70
80
-40
-35
-30
-25
-20
-15
-10
-5
0
Input Signal Level (dB)
S
INAD (
d
B)
V
DD
= V
REF
= 2.7V
f
SAMPLE
= 75 ksps
V
DD
= V
REF
= 5V
f
SAMPLE
= 200 ksps
MCP3001
DS21293C-page 10
©
2007 Microchip Technology Inc.
Note: Unless otherwise indicated, V
DD
= V
REF
= 5V, f
SAMPLE
= 200 ksps, f
CLK
= 14*Sample Rate,T
A
= 25°C
FIGURE 2-25: Effective Number of Bits (ENOB) vs.
V
REF
.
FIGURE 2-26: Spurious Free Dynamic Range
(SFDR) vs. Input Frequency.
FIGURE 2-27: Frequency Spectrum of 10 kHz Input
(Representative Part).
FIGURE 2-28: Effective Number of Bits (ENOB) vs.
Input Frequency.
FIGURE 2-29: Power Supply Rejection (PSR) vs.
Ripple Frequency.
FIGURE 2-30: Frequency Spectrum of 1 kHz Input
(Representative Part, V
DD
= 2.7V).
9.0
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
10.0
0.0
1.0
2.0
3.0
4.0
5.0
V
REF
(V)
ENO
B
(r
ms
)
V
DD
= V
REF
= 2.7V
f
SAMPLE
= 75 ksps
V
DD
= V
REF
= 5V
f
SAMPLE
= 200 ksps
0
10
20
30
40
50
60
70
80
90
100
1
10
100
Input Frequency (kHz)
SF
DR (d
B)
V
DD
= V
REF
= 5V
f
SAMPLE
= 200 ksps
V
DD
= V
REF
= 2.7V
f
SAMPLE
= 75 ksps
-130
-120
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0
20000
40000
60000
80000
100000
Frequency (Hz)
Am
plit
ude
(
d
B)
V
DD
= V
REF
= 5V
f
SAMPLE
= 200 ksps
f
INPUT
= 10.0097 kHz
4096 points
8.0
8.2
8.4
8.6
8.8
9.0
9.2
9.4
9.6
9.8
10.0
1
10
100
Input Frequency (kHz)
ENOB (rm
s
)
V
DD
= V
REF
= 2.7V
f
SAMPLE
= 75 ksps
V
DD
= V
REF
= 5V
f
SAMPLE
= 200 ksps
-80
-70
-60
-50
-40
-30
-20
-10
0
1
10
100
1000
10000
Ripple Frequency (kHz)
P
o
we
r S
uppl
y
Re
je
c
ti
on (dB)
V
DD
= V
REF
= 5V
f
SAMPLE
= 200 ksps
-130
-120
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0
5000
10000 15000 20000 25000 30000 35000
Frequency (Hz)
Am
plit
ude
(
d
B)
V
DD
= V
REF
= 2.7V
f
SAMPLE
= 75 ksps
f
INPUT
= 1.00708 kHz
4096 points