2012 Microchip Technology Inc.
DS22304A-page 1
MCP2035
Device Features:
• Single Analog Input Pin for Signal Detection
• High Input Detection Sensitivity (3 mV
PP
, typical)
• High Modulation Depth Sensitivity (as low as 8%)
• Three Output Type Selections:
- Demodulated Data
- Carrier Clock
- Received Signal Strength Indicator (RSSI)
• Input Carrier Frequency: 125 kHz, typical
• Input Data Rate: 10 Kbps, maximum
• 8 Internal Configuration Registers
• Bidirectional Transponder Communication via the
same input pin (LF talk-back)
• Programmable Antenna Tuning Capacitance
(up to 63 pF, 1 pF/step)
• Programmable Output Enable Filter
• Low Standby Current: 2 µA, typical
• Low Operating Current: 10 µA, typical
• Serial Peripheral Interface (SPI) with external
devices
• Industrial and Extended Temperature Range:
-40°C to +85°C (Industrial)
Typical Applications:
• BodyCom Applications
• Security Industry Applications
• Automotive Industry Applications
Description:
The MCP2035 is a single-channel, stand-alone Analog
Front-End (AFE) device for low-frequency (LF) signal
detection and low-power short range transponder
applications, such as BodyCom communications.
The device can detect an input signal with amplitude as
low as ~1 mV
PP
, and can demodulate an amplitude-
modulated input signal with as low as 8% modulation
depth. The device can also transmit data (LF talk-back)
by clamping and unclamping the input LC antenna
voltage.
The device can output demodulated data, carrier clock
or RSSI current, depending on the output-type
selection configuration register bit settings. The
demodulated data and carrier clock outputs are
available on the LFDATA pin, while the RSSI output is
available on the RSSI pin. The RSSI current output is
linearly proportional to the input signal strength.
The device has programmable internal tuning
capacitors for the input channel. The user can program
the input tuning capacitors up to 63 pF, 1 pF per step.
The internal tuning capacitors can be used effectively
for fine-tuning of the external LC resonant circuit.
The device has eight volatile internal configuration
registers for dynamic configurations of the device
operation on-the-fly. All registers are readable and
programmable using the serial SPI commands, except
the read-only STATUS register.
The device is optimized for very low current
consumption and has various battery-saving low-
power modes (Sleep, Standby, Active).
This device is available in a 14-pin TSSOP package.
Package Type:
1
2
3
4
5
6
7
14
13
12
9
11
10
8
NC
LCCOM
LCX
V
SS
LFDATA/
V
DD
NC
NC
V
SS
CS
SCLK/ALERT
RSSI
NC
V
DD
CCLK/SDIO
MCP2035
TSSOP
Analog Front-End Device for BodyCom Applications
MCP2035
DS22304A-page 2
2012 Microchip Technology Inc.
NOTES:
2012 Microchip Technology Inc.
DS22304A-page 3
MCP2035
1.0
ELECTRICAL SPECIFICATIONS
Absolute Maximum Ratings
(†)
Ambient temperature under bias.............................................................................................................-40°C to +125°C
Storage temperature .............................................................................................................................. -65°C to +150°C
Voltage on V
DD
with respect to V
SS
.......................................................................................................... -0.3V to +6.5V
Voltage on all other pins with respect to V
SS
................................................................................. -0.3V to (V
DD
+ 0.3V)
Maximum current out of V
SS
pin ...........................................................................................................................300 mA
Maximum current into V
DD
pin ..............................................................................................................................250 mA
Maximum LC Input Voltage (LCX) loaded, with device ....................................................................................... 10.0 V
PP
Maximum LC Input Voltage (LCX) unloaded, without device ............................................................................ 700.0 V
PP
Maximum Input Current (rms) into device (LCX Input Channel) .............................................................................10 mA
Human Body ESD rating......................................................................................................................2000 (minimum) V
Machine Model ESD rating ....................................................................................................................200 (minimum) V
†
Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at those or any other conditions above those indicated in the
operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may
affect device reliability.
DC CHARACTERISTICS
Electrical Specifications:
Standard Operating Conditions (unless otherwise stated),
Operating temperature: -40
C T
A
+85C, LCX Input Signal: Sinusoidal 300 mV
PP,
Carrier Frequency = 125 kHz,
LCCOM connected to V
SS,
Bits <3:1>
of Configuration Register 0: LCXEN = 0, LCZEN = LCYEN = 1.
Parameters
Sym.
Min.
Typ.
(
2
)
Max.
Units
Conditions
Supply Voltage
V
DD
2.0
3.0
3.6
V
V
DD
Start Voltage to ensure
internal
Power-on Reset signal
V
POR
—
—
1.8
V
Modulation Transistor-on
Resistance
R
M
—
50
100
V
DD
= 3.0V
Active Current (detecting signal)
1 LC Input Channel (LCX) is
Receiving Signal
I
ACT
—
10
—
µA
CS = V
DD
Input = Continuous Wave (CW)
Amplitude = 300 mV
PP
LCX input channel is enabled.
Standby Current
(wait to detect signal)
I
STDBY
—
2
5
µA
CS = V
DD
; ALERT = V
DD
LCX input channel is enabled.
Sleep Current
I
SLEEP
—
0.2
1
µA
CS = V
DD
; ALERT = V
DD
Analog Input Leakage
Current on LCX and LCCOM
pins
I
AIL
—
—
1
µA
V
DD
= 3.6V, V
SS
V
IN
1V with
respect to ground. Internal
tuning capacitors are switched
off, tested in Sleep mode
Digital Input Low Voltage
V
IL
V
SS
—
0.3 V
DD
V
SCLK, SDI, CS
Digital Input High Voltage
V
IH
0.8 V
DD
—
V
DD
V
SCLK, SDI, CS
Note 1:
These parameters are characterized but not tested.
2:
Data in “Typ.” column is at 3.0V, +25
C unless otherwise stated. These parameters are for design
guidance only and are not tested.
3:
Negative current is defined as current sourced by the pin.
MCP2035
DS22304A-page 4
2012 Microchip Technology Inc.
Digital Input Leakage Current
SDI, SCLK, CS (
Note 3
)
I
IL
—
—
1
µA
V
DD
= 3.6V
V
SS
V
PIN
V
DD
V
PIN
V
DD
Digital Output Low Voltage
ALERT, LFDATA/SDIO
V
OL
—
—
V
SS
+
0.4
V
Analog Front-End section
I
OL
= 1.0 mA, V
DD
= 2.0V
Digital Output High Voltage
ALERT, LFDATA/SDIO
V
OH
V
DD
- 0.5
—
—
V
I
OH
= -400
A, V
DD
= 2.0V
Digital Input Pull-Up Resistor
CS, SCLK
R
PU
50
200
350
k
V
DD
= 3.6V
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Standard Operating Conditions (unless otherwise stated),
Operating temperature: -40
C T
A
+85C, LCX Input Signal: Sinusoidal 300 mV
PP,
Carrier Frequency = 125 kHz,
LCCOM connected to V
SS,
Bits <3:1>
of Configuration Register 0: LCXEN = 0, LCZEN = LCYEN = 1.
Parameters
Sym.
Min.
Typ.
(
2
)
Max.
Units
Conditions
Note 1:
These parameters are characterized but not tested.
2:
Data in “Typ.” column is at 3.0V, +25
C unless otherwise stated. These parameters are for design
guidance only and are not tested.
3:
Negative current is defined as current sourced by the pin.
2012
Micr
ochip T
e
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I
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c.
DS
22304A
-page 5
MCP2
035
AC CHARACTERISTICS
Electrical Specifications:
Standard Operating Conditions (unless otherwise stated), Supply Voltage: 2.0V
V
DD
3.6V, Operating temperature: -40°C T
A
+85°C,
LCCOM connected to V
SS
, LCX Input Signal: Sinusoidal 300 mV
PP
, Carrier Frequency = 125 kHz, Bits <3:1> of Configuration Register 0: LCXEN = 0, LCZEN =
LCYEN = 1.
Parameters
Sym.
Min.
Typ
(
2
)
Max.
Units
Conditions
Input Sensitivity
V
SENSE
1
3.0
6
mV
PP
V
DD
= 3.0V
Output enable filter disabled
AGCSIG = 0;
MODMIN = 00
(33% modulation depth setting)
Input = Continuous Wave (CW)
Output = Logic level transition from low-to-high at
sensitivity level for CW input.
Coil de-Q’ing Voltage - RF Limiter (R
FLM
)
must be active
V
DE_Q
3
—
5
V
V
DD
= 3.0V, Force I
IN
= 5
A
(worst case)
RF Limiter Turn-on Resistance at LCX pin
R
FLM
—
300
700
Ω
V
DD
= 2.0V, V
IN
= 8 V
DC
Sensitivity Reduction
S
ADJ
—
0
—
dB
V
DD
= 3.0V
No sensitivity reduction selected
Maximum reduction selected
Monotonic increment in attenuation value from setting
= 0000 to 1111 by design
—
-30
—
dB
Minimum Modulation Depth
60% setting
V
IN_MOD
—
60
84
%
V
DD
= 3.0V
See
Section 5.20 “Minimum Modulation Depth
Requirement for Input Signal”
.
See Modulation Depth Definition in
Figure 5-5
.
33% setting
—
33
49
%
14% setting
—
14
26
%
8%
8
%
Carrier frequency
F
CARRIER
—
125
—
kHz
Input modulation frequency
F
MOD
—
—
10
kHz
Input data rate with NRZ data format.
V
DD
= 3.0V
Minimum modulation depth setting = 33%
Input conditions:
Amplitude = 300 mV
PP
Modulation depth = 100%
Note 1:
Parameter is characterized but not tested.
2:
Data in “Typ.” column is at 3.0V, +25°C unless otherwise stated. These parameters are for design guidance only and are not tested.
3:
Required output enable filter high time must account for input path analog delays (= T
OEH
- T
DR
+ T
DF
).
4:
Required output enable filter low time must account for input path analog delays (= T
OEL
+ T
DR
- T
DF
).
MCP2035
DS2
2304A-page
6
20
12 M
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T
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In
c.
LCX Tuning Capacitor
C
TUNX
—
0
—
pF
V
DD
= 3.0V,
Config. Reg. 1,
bits <6:1> Setting = 000000
44
59
82
pF
63 pF ±30%
Config. Reg. 1, bits <6:1> Setting = 111111
63 steps, approx. 1 pF/step
Monotonic increment in capacitor value from setting =
000000
to 111111 by design
Q of Internal Input Tuning
Capacitors
Q_C
50
(
1
)
—
—
Demodulator Charge Time
(delay time of demodulated
output to rise)
T
DR
—
50
—
µs
V
DD
= 3.0V
Minimum modulation depth setting = 33%
Input conditions:
Amplitude = 300 mV
PP
Modulation depth = 100%
Demodulator Discharge Time (delay time of
demodulated
output to fall)
T
DF
—
50
—
µs
V
DD
= 3.0V
MOD depth setting = 33%
Input conditions:
Amplitude = 300 mV
PP
Modulation depth = 100%
Rise time of LFDATA
TR
LFDATA
—
0.5
—
µs
V
DD
3.0V. Time is measured from 10% to 90% of
amplitude
Fall time of LFDATA
TF
LFDATA
—
0.5
—
µs
V
DD
3.0V
Time is measured from 10% to 90% of amplitude
Automatic Gain Control (AGC) stabilization
time (T
AGC +
T
PAGC
)
T
STAB
4
—
—
ms
AGC initialization time
T
AGC
—
3.5
—
ms
High time after AGC initialization time
T
PAGC
—
62.5
—
µs
AC CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Standard Operating Conditions (unless otherwise stated), Supply Voltage: 2.0V
V
DD
3.6V, Operating temperature: -40°C T
A
+85°C,
LCCOM connected to V
SS
, LCX Input Signal: Sinusoidal 300 mV
PP
, Carrier Frequency = 125 kHz, Bits <3:1> of Configuration Register 0: LCXEN = 0, LCZEN =
LCYEN = 1.
Parameters
Sym.
Min.
Typ
(
2
)
Max.
Units
Conditions
Note 1:
Parameter is characterized but not tested.
2:
Data in “Typ.” column is at 3.0V, +25°C unless otherwise stated. These parameters are for design guidance only and are not tested.
3:
Required output enable filter high time must account for input path analog delays (= T
OEH
- T
DR
+ T
DF
).
4:
Required output enable filter low time must account for input path analog delays (= T
OEL
+ T
DR
- T
DF
).
2012
Micr
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DS
22304A
-page 7
MCP2
035
Gap time after AGC stabilization time
T
GAP
200
—
—
µs
Time element of pulse
T
E
100
—
—
µs
Minimum pulse width
Time from exiting Sleep or POR to being
ready to receive signal
T
RDY
—
—
50
(
1
)
ms
Minimum time AGC level must be held after
receiving AGC Preserve command
T
PRES
5
(
1
)
—
—
ms
AGC level must not change more than 10% during
T
PRES
Internal RC oscillator frequency
F
OSC
27
32
35.5
kHz
Internal clock trimmed at 32 kHz during test
Inactivity Timer time-out
T
INACT
13.5
16
17.75
ms
512 cycles of RC oscillator @ F
OSC
Alarm Timer time-out
T
ALARM
27
32
35.5
ms
1024 cycles of RC oscillator @ F
OSC
Input Resistance
(LCX)
R
IN
—
800
(
1
)
—
k
LCCOM grounded, V
DD
= 3V, F
CARRIER
= 125 kHz
Input Parasitic Capacitance
(LCX)
C
IN
—
24
(
1
)
—
pF
LCCOM grounded, V
DD
= 3V, F
CARRIER
= 125 kHz
Minimum output enable filter high time
OEH (Bits Config0<8:7>
)
01
= 1 ms
T
OEH
32 (~1 ms)
—
—
clock
count
RC oscillator = F
OSC
(see F
OSC
specification
for variations).
Viewed from the pin input:
(Note 3)
10
= 2 ms
64 (~2 ms)
—
—
11
= 4 ms
128 (~4 ms)
—
—
00
= Filter Disabled
—
—
—
Minimum output enable filter low time
OEL (Bits Config0<6:5>
)
00
= 1 ms
T
OEL
32 (~1 ms)
—
—
clock
count
RC oscillator = F
OSC
Viewed from the pin input:
(Note 4)
01
= 1 ms
32 (~1 ms)
—
—
10
= 2 ms
64 (~2 ms)
—
—
11
= 4 ms
128 (~4 ms)
—
—
AC CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Standard Operating Conditions (unless otherwise stated), Supply Voltage: 2.0V
V
DD
3.6V, Operating temperature: -40°C T
A
+85°C,
LCCOM connected to V
SS
, LCX Input Signal: Sinusoidal 300 mV
PP
, Carrier Frequency = 125 kHz, Bits <3:1> of Configuration Register 0: LCXEN = 0, LCZEN =
LCYEN = 1.
Parameters
Sym.
Min.
Typ
(
2
)
Max.
Units
Conditions
Note 1:
Parameter is characterized but not tested.
2:
Data in “Typ.” column is at 3.0V, +25°C unless otherwise stated. These parameters are for design guidance only and are not tested.
3:
Required output enable filter high time must account for input path analog delays (= T
OEH
- T
DR
+ T
DF
).
4:
Required output enable filter low time must account for input path analog delays (= T
OEL
+ T
DR
- T
DF
).
MCP2035
DS2
2304A-page
8
20
12 M
ic
rochip
T
e
chnology
In
c.
Maximum output enable filter period
OEH OEL
T
OEH
T
OEL
01
00
= 1 ms 1 ms (Filter 1)
T
OET
—
—
96 (~3 ms)
clock
count
RC oscillator = F
OSC
01
01
= 1 ms 1 ms (Filter 1)
—
—
96 (~3 ms)
01
10
= 1 ms 2 ms (Filter 2)
—
—
128 (~4 ms)
01
11
= 1 ms 4 ms (Filter 3
—
—
192 (~6 ms)
10
00
= 2 ms 1 ms (Filter 4)
—
—
128 (~4 ms)
10
01
= 2 ms 1 ms (Filter 4)
—
—
128 (~4 ms)
10
10
= 2 ms 2 ms (Filter 5)
—
—
160 (~5 ms)
10
11
= 2 ms 4 ms (Filter 6)
—
—
250 (~8 ms)
11
00
= 4 ms 1 ms (Filter 7)
—
—
192 (~6 ms)
11
01
= 4 ms 1 ms (Filter 7)
—
—
192 (~6 ms)
11
10
= 4 ms 2 ms (Filter 8)
—
—
256 (~8 ms)
11
11
= 4 ms 4 ms (Filter 9)
—
—
320 (~10 ms)
00
XX
= Filter Disabled
—
—
—
LFDATA output appears as long as input signal level is
greater than V
SENSE
.
RSSI current output
I
RSSI
—
0.65
2
µA
V
IN
= 37 mV
PP
6
12
20.3
µA
V
IN
= 370 mV
PP
—
100
—
µA
V
DD
= 3.0V, V
IN
= 0 to 4 V
PP
Linearly increases with input signal amplitude.
Tested at V
IN
= 37 mV
PP
, 100 mV
PP
, and 370 mV
PP
at +25ºC.
RSSI current linearity
ILR
RSSI
-15
—
15
%
Tested at room temperature only (see
Equation 5-1
and
Figure 5-7
for test method).
AC CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Standard Operating Conditions (unless otherwise stated), Supply Voltage: 2.0V
V
DD
3.6V, Operating temperature: -40°C T
A
+85°C,
LCCOM connected to V
SS
, LCX Input Signal: Sinusoidal 300 mV
PP
, Carrier Frequency = 125 kHz, Bits <3:1> of Configuration Register 0: LCXEN = 0, LCZEN =
LCYEN = 1.
Parameters
Sym.
Min.
Typ
(
2
)
Max.
Units
Conditions
Note 1:
Parameter is characterized but not tested.
2:
Data in “Typ.” column is at 3.0V, +25°C unless otherwise stated. These parameters are for design guidance only and are not tested.
3:
Required output enable filter high time must account for input path analog delays (= T
OEH
- T
DR
+ T
DF
).
4:
Required output enable filter low time must account for input path analog delays (= T
OEL
+ T
DR
- T
DF
).
2012 Microchip Technology Inc.
DS22304A-page 9
MCP2035
SPI TIMING
Electrical Specifications:
Standard Operating Conditions (unless otherwise stated),
Supply Voltage: 2.0V
V
DD
3.6V, Operating temperature: -40°C T
A
+85°C,
LCX Input Signal: Sinusoidal 300 mV
PP
, Carrier Frequency: 125 kHz, LCCOM connected to V
SS
Parameters
Sym
Min
Typ
(
1
)
Max
Units
Conditions
SCLK Frequency
F
SCLK
—
—
3
MHz
CS fall to first SCLK edge
setup time
T
CSSC
100
—
—
ns
SDI setup time
T
SU
30
—
—
ns
SDI hold time
T
HD
50
—
—
ns
SCLK high time
T
HI
150
—
—
ns
SCLK low time
T
LO
150
—
—
ns
SDO setup time
T
DO
—
—
150
ns
SCLK last edge to CS rise
setup time
T
SCCS
100
—
—
ns
CS high time
T
CSH
500
—
—
ns
CS rise to SCLK edge setup time
T
CS1
50
—
—
ns
SCLK edge to CS fall setup time
T
CS0
50
—
—
ns
SCLK edge when CS is high
Rise time of SPI data
(SPI Read command)
TR
SPI
—
10
—
ns
V
DD
3.0V; time is measured
from 10% to 90% of amplitude
Fall time of SPI data
(SPI Read command)
TF
SPI
—
10
—
ns
V
DD
3.0V; time is measured
from 90% to 10% of amplitude
Note 1:
Data in “Typ.” column is at 3.0V, +25°C unless otherwise stated. These parameters are for design
guidance only and are not tested.
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, V
DD
= 2.0V to 3.6V, V
SS
= GND.
Parameters
Symbol
Min
Typical
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
T
A
-40
—
+85
°C
Operating Temperature Range
T
A
-40
—
+125
°C
Storage Temperature Range
T
A
-65
—
+150
°C
Thermal Package Resistances
Thermal Resistance, 14L-TSSOP
JA
—
100
—
°C/W
MCP2035
DS22304A-page 10
2012 Microchip Technology Inc.
NOTES: