2011-2015 Microchip Technology Inc.
DS20005004D-page 1
MCP16301/H
Features
• Up to 96% Typical Efficiency
• Input Voltage Range:
- 4.0V to 30V (MCP16301)
- 4.7V to 36V (MCP16301H)
• Output Voltage Range: 2.0V to 15V
• 2% Output Voltage Accuracy
• Qualification: AEC-Q100 Rev G, Grade 1
(-40°C to +125°C)
• Integrated N-Channel Buck Switch: 460 m
• Minimum 600 mA Output Current Over All Input
Voltage Range (See
Figure 2-6
for Maximum
Output Current vs. V
IN
):
- up to 1A output current at 3.3V, 5V and 12V
V
OUT
, SOT-23 package at +25°C ambient
temperature
• 500 kHz Fixed Frequency
• Adjustable Output Voltage
• Low Device Shutdown Current
• Peak Current Mode Control
• Internal Compensation
• Stable with Ceramic Capacitors
• Internal Soft-Start
• Cycle-by-Cycle Peak Current Limit
• Undervoltage Lockout (UVLO): 3.5V
• Overtemperature Protection
• Available Package: SOT-23-6
Applications
• PIC
®
Microcontroller and dsPIC
®
Digital Signal
Controller Bias Supply
• 24V Industrial Input DC-DC Conversion
• Set-Top Boxes
• DSL Cable Modems
• Automotive
• Wall Cube Regulation
• SLA Battery-Powered Devices
• AC-DC Digital Control Power Source
• Power Meters
• D
2
Package Linear Regulator Replacement
- See
Figure 5-2
• Consumer
• Medical and Health Care
• Distributed Power Supplies
General Description
The MCP16301/H devices are highly integrated,
high-efficiency, fixed-frequency, step-down DC-DC
converters in a popular 6-pin SOT-23 package that
operates from input voltage sources up to 36V.
Integrated features include a high-side switch,
fixed-frequency peak current mode control, internal
compensation, peak current limit and overtemperature
protection. Minimal external components are
necessary to develop a complete step-down DC-DC
converter power supply.
High converter efficiency is achieved by integrating the
current-limited, low-resistance, high-speed N-Channel
MOSFET and associated drive circuitry. High
switching frequency minimizes the size of external
filtering components, resulting in a small solution size.
The MCP16301/H devices can supply 600 mA of
continuous current while regulating the output voltage
from 2.0V to 15V. An integrated, high-performance
peak current mode architecture keeps the output
voltage tightly regulated, even during input voltage
steps and output current transient conditions that are
common in power systems.
The EN input is used to turn the device on and off.
While turned off, only a few micro amps of current are
consumed from the input for power shedding and load
distribution applications.
Output voltage is set with an external resistor divider.
The MCP16301/H devices are offered in a
space-saving SOT-23-6 surface mount package.
Package Type
MCP16301/H
6-Lead SOT-23
1
2
3
4
5
6 SW
V
IN
EN
BOOST
GND
V
FB
High-Voltage Input Integrated Switch Step-Down Regulator
MCP16301/H
DS20005004D-page 2
2011-2015 Microchip Technology Inc.
Typical Applications
V
IN
GND
V
FB
SW
V
IN
6.0V to 36V
V
OUT
5.0V @ 600 mA
C
OUT
2 x 10 µF
C
IN
10 µF
L
1
22 µH
Boost
52.3 k
10 k
EN
1N4148
40V
Schottky
Diode
C
BOOST
100 nF
V
IN
GND
V
FB
SW
V
IN
4.7V to 36V
V
OUT
3.3V @ 600 mA
C
OUT
2 x 10 µF
C
IN
10 µF
L
1
15 µH
Boost
31.6 k
10 k
EN
1N4148
40V
Schottky
Diode
C
BOOST
100 nF
0
10
20
30
40
50
60
70
80
90
100
10
100
1000
I
OUT
(mA)
E
ffi
ci
en
cy
(%
)
V
OUT
= 5.0V
V
OUT
= 3.3V
V
IN
= 12V
2011-2015 Microchip Technology Inc.
DS20005004D-page 3
MCP16301/H
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
IN,
SW ............................................................... -0.5V to 40V
BOOST – GND ................................................... -0.5V to 46V
BOOST – SW Voltage........................................ -0.5V to 6.0V
V
FB
Voltage ........................................................ -0.5V to 6.0V
EN Voltage ............................................. -0.5V to (V
IN
+ 0.3V)
Output Short-Circuit Current ................................. Continuous
Power Dissipation ....................................... Internally Limited
Storage Temperature ................................... -65
°
C to +150
°
C
Ambient Temperature with Power Applied ... -40
°
C to +125
°
C
Operating Junction Temperature.................. -40
°
C to +150
°
C
ESD Protection On All Pins:
HBM ................................................................. 3 kV
MM ..................................................................200V
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C, V
IN
= V
EN
= 12V, V
BOOST
– V
SW
= 3.3V,
V
OUT
= 3.3V, I
OUT
= 100 mA, L = 15 µH, C
OUT
= C
IN
= 2 x 10 µF X7R ceramic capacitors.
Boldface specifications apply over the T
A
range of -40
o
C to +125
o
C.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Input Voltage
V
IN
4
—
30
V
Note 1
(MCP16301)
4.7
—
36
V
Note 1
(MCP16301H)
Feedback Voltage
V
FB
0.784
0.800
0.816
V
Output Voltage Adjust Range
V
OUT
2.0
—
15.0
V
Note 2
Feedback Voltage
Line Regulation
V
FB
/V
FB
)/
V
IN
—
0.01
0.1
%/V
V
IN
= 12V to 30V
Feedback Input Bias Current
I
FB
-250
±10
+250
nA
Undervoltage Lockout Start
UVLO
START
—
3.5
4.0
V
V
IN
Rising (MCP16301)
—
3.5
4.7
V
V
IN
Rising (MCP16301H)
Undervoltage Lockout Stop
UVLO
STOP
2.4
3.0
—
V
V
IN
Falling
Undervoltage Lockout
Hysteresis
UVLO
HYS
—
0.5
—
V
Switching Frequency
f
SW
425
500
550
kHz
I
OUT
= 200 mA
Maximum Duty Cycle
DC
MAX
90
95
—
%
V
IN
= 5V; V
FB
= 0.7V;
I
OUT
= 100 mA
Minimum Duty Cycle
DC
MIN
—
1
—
%
NMOS Switch On Resistance
R
DS(ON)
—
0.46
—
V
BOOST
– V
SW
= 3.3V
NMOS Switch Current Limit
I
N(MAX)
—
1.3
—
A
V
BOOST
– V
SW
= 3.3V
Quiescent Current
I
Q
—
2
7.5
mA
V
BOOST
= 3.3V;
Note 3
Quiescent Current - Shutdown
I
Q
—
7
10
µA
V
OUT
= EN = 0V
Maximum Output Current
I
OUT
600
—
—
mA
Note 1
EN Input Logic High
V
IH
1.4
—
—
V
EN Input Logic Low
V
IL
—
—
0.4
V
EN Input Leakage Current
I
ENLK
—
0.05
1.0
µA
V
EN
= 12V
Note 1:
The input voltage should be > output voltage + headroom voltage; higher load currents increase the input
voltage necessary for regulation. See characterization graphs for typical input to output operating voltage
range and UVLO
START
and UVLO
STOP
limits.
2:
For V
IN
< V
OUT
, V
OUT
will not remain in regulation.
3:
V
BOOST
supply is derived from V
OUT
.
MCP16301/H
DS20005004D-page 4
2011-2015 Microchip Technology Inc.
Soft-Start Time
t
SS
—
300
—
µS
EN Low to High,
90% of V
OUT
Thermal Shutdown Die
Temperature
T
SD
—
150
—
C
Die Temperature Hysteresis
T
SDHYS
—
30
—
C
TEMPERATURE SPECIFICATIONS
Electrical Specifications: Unless otherwise indicated, T
A
= +25°C, V
IN
= V
EN
= 12V, V
BOOST
– V
SW
= 3.3V,
V
OUT
= 3.3V
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Temperature Ranges
Operating Junction Temperature Range
T
J
-40
—
+125
°C
Steady State
Storage Temperature Range
T
A
-65
—
+150
°C
Maximum Junction Temperature
T
J
—
—
+150
°C
Transient
Package Thermal Resistances
Thermal Resistance, 6L-SOT-23
JA
—
190.5
—
°C/W
EIA/JESD51-3 Standard
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C, V
IN
= V
EN
= 12V, V
BOOST
– V
SW
= 3.3V,
V
OUT
= 3.3V, I
OUT
= 100 mA, L = 15 µH, C
OUT
= C
IN
= 2 x 10 µF X7R ceramic capacitors.
Boldface specifications apply over the T
A
range of -40
o
C to +125
o
C.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Note 1:
The input voltage should be > output voltage + headroom voltage; higher load currents increase the input
voltage necessary for regulation. See characterization graphs for typical input to output operating voltage
range and UVLO
START
and UVLO
STOP
limits.
2:
For V
IN
< V
OUT
, V
OUT
will not remain in regulation.
3:
V
BOOST
supply is derived from V
OUT
.
2011-2015 Microchip Technology Inc.
DS20005004D-page 5
MCP16301/H
2.0
TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, V
IN
= EN = 12V, C
OUT
= C
IN
= 2 X 10 µF, L = 15 µH, V
OUT
= 3.3V, I
LOAD
= 200 mA,
T
A
= +25°C
.
FIGURE 2-1:
2.0V V
OUT
Efficiency vs.
I
OUT
.
FIGURE 2-2:
3.3V V
OUT
Efficiency vs.
I
OUT
.
FIGURE 2-3:
5.0V V
OUT
Efficiency vs.
I
OUT
.
FIGURE 2-4:
12V V
OUT
Efficiency vs.
I
OUT
.
FIGURE 2-5:
15V V
OUT
Efficiency vs.
I
OUT
.
FIGURE 2-6:
Maximum Output Current
vs. V
IN
.
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
30
40
50
60
70
80
90
0
100
200
300
400
500
600
Efficiency
(%
)
I
OUT
(mA)
V
IN
=
30V
V
IN
=
12V
V
IN
= 6V
V
OUT
= 2.0V
30
40
50
60
70
80
90
100
0
100
200
300
400
500
600
Efficiency
(%
)
I
OUT
(mA)
V
IN
= 30V
V
IN
= 12V
V
IN
= 6V
V
OUT
= 3.3V
30
40
50
60
70
80
90
100
0
100
200
300
400
500
600
Efficiency
(%
)
I
OUT
(mA)
V
IN
= 30V
V
IN
= 12V
V
IN
= 6V
V
OUT
= 5.0V
30
40
50
60
70
80
90
100
0
100
200
300
400
500
600
Efficiency
(%
)
I
OUT
(mA)
V
IN
= 30V
V
IN
= 24V
V
IN
= 16V
V
OUT
= 12.0V
30
40
50
60
70
80
90
100
0
100
200
300
400
500
600
Efficiency
(%
)
I
OUT
(mA)
V
IN
= 30V
V
IN
= 24V
V
IN
= 16V
V
OUT
= 15.0V
0
200
400
600
800
1000
1200
1400
6
12
18
24
30
36
I
OUT
(mA)
V
IN
(V)
V
OUT
= 3.3V
V
OUT
= 5V
V
OUT
= 12V
MCP16301/H
DS20005004D-page 6
2011-2015 Microchip Technology Inc.
Note: Unless otherwise indicated, V
IN
= EN = 12V, C
OUT
= C
IN
= 2 X 10 µF, L = 15 µH, V
OUT
= 3.3V, I
LOAD
= 200 mA,
T
A
= +25°C
.
FIGURE 2-7:
Input Quiescent Current vs.
Temperature.
FIGURE 2-8:
Switching Frequency vs.
Temperature; V
OUT
= 3.3V.
FIGURE 2-9:
Maximum Duty Cycle vs.
Ambient Temperature; V
OUT
= 5.0V.
FIGURE 2-10:
Peak Current Limit vs.
Temperature; V
OUT
= 3.3V.
FIGURE 2-11:
Switch R
DSON
vs. V
BOOST.
FIGURE 2-12:
V
FB
vs. Temperature;
V
OUT
= 3.3V.
0
1
2
3
4
5
-40 -25 -10
5
20
35
50
65
80
95 110 125
I
Q
(mA)
Ambient Temperature (°C)
V
OUT
= 3.3V
I
OUT
= 0 mA
V
IN
= 12V
V
IN
= 6V
V
IN
= 30V
455
460
465
470
475
480
485
490
495
500
505
-40
-20
0
20
40
60
80
100
120
Sw
itching Frequency
(kHz)
Ambient Temperature (°C)
V
IN
= 12V
V
OUT
= 3.3V
I
OUT
= 200 mA
94.7
94.8
94.9
95
95.1
95.2
95.3
95.4
95.5
-40 -25 -10
5
20 35 50 65 80 95 110 125
Maximum
Duty
Cy
cle (%
)
Ambient Temperature (°C)
V
IN
= 5V
I
OUT
= 200 mA
600
800
1000
1200
1400
1600
1800
-40 -25 -10
5
20
35
50
65
80
95 110 125
Peak Current Limit
(mA)
Ambient Temperature (°C)
V
IN
= 12V
V
IN
= 30V
V
IN
= 6V
V
OUT
= 3.3V
420
430
440
450
460
470
480
490
500
510
3
3.5
4
4.5
5
RDSON (m
:
)
Boost Voltage (V)
T
A
= 25°C
V
DS
= 100 mV
0.796
0.797
0.798
0.799
0.800
0.801
0.802
-40
-20
0
20
40
60
80
100
120
V
FB
V
o
ltage (V)
Ambient Temperature (°C)
V
IN
= 12V
V
OUT
= 3.3V
I
OUT
= 100 mA
2011-2015 Microchip Technology Inc.
DS20005004D-page 7
MCP16301/H
Note: Unless otherwise indicated, V
IN
= EN = 12V, C
OUT
= C
IN
= 2 X 10 µF, L = 15 µH, V
OUT
= 3.3V, I
LOAD
= 200 mA,
T
A
= +25°C
.
FIGURE 2-13:
Undervoltage Lockout vs.
Temperature.
FIGURE 2-14:
EN Threshold Voltage vs.
Temperature.
FIGURE 2-15:
Light Load Switching
Waveforms.
FIGURE 2-16:
Heavy Load Switching
Waveforms.
FIGURE 2-17:
Typical Minimum Input
Voltage vs. Output Current.
FIGURE 2-18:
Start-Up From Enable.
2.50
2.60
2.70
2.80
2.90
3.00
3.10
3.20
3.30
3.40
3.50
3.60
3.70
3.80
-40 -25 -10
5
20
35
50
65
80
95 110 125
V
o
ltage (V)
Ambient Temperature (°C)
UVLO Start
UVLO Stop
0.40
0.45
0.50
0.55
0.60
0.65
0.70
-40 -25 -10
5
20
35
50
65
80
95 110 125
Enable Threshold
V
o
ltage (V)
Ambient Temperature (°C)
V
IN
= 12V
V
OUT
= 3.3V
I
OUT
= 100 mA
V
OUT
= 3.3V
I
OUT
= 50 mA
V
IN
= 12V
V
OUT
20 mV/DIV
AC coupled
V
SW
5V/DIV
I
L
100 mA/DIV
1 µs/DIV
V
OUT
= 3.3V
I
OUT
= 600 mA
V
IN
= 12V
1 µs/DIV
V
OUT
=
20 mV/DIV
AC coupled
V
SW
=
5V/DIV
I
L
=
20 mA/DIV
3.20
3.50
3.80
4.10
4.40
4.70
5.00
1
10
100
1000
Minimum
Input V
o
ltage (V)
I
OUT
(mA)
To Start
To Run
V
OUT
= 3.3V
I
OUT
= 100 mA
V
IN
= 12V
V
OUT
2V/DIV
100 µs/
V
OUT
2V/DIV
100 µs/DIV
V
EN
2V/DIV
MCP16301/H
DS20005004D-page 8
2011-2015 Microchip Technology Inc.
Note: Unless otherwise indicated, V
IN
= EN = 12V, C
OUT
= C
IN
= 2 X 10 µF, L = 15 µH, V
OUT
= 3.3V, I
LOAD
= 200 mA,
T
A
= +25°C
.
FIGURE 2-19:
Start-Up from V
IN.
FIGURE 2-20:
Load Transient Response.
FIGURE 2-21:
Line Transient Response.
V
OUT
= 3.3V
I
OUT
= 100 mA
V
IN
= 12V
V
OUT
1V/DIV
V
IN
5V/DIV
100 µs/DIV
V
OUT
= 3.3V
I
OUT
= 100 mA to 600
mA
V
OUT
AC coupled
100 mV/DIV
I
OUT
200 mA/DIV
100 µs/DIV
V
OUT
= 3.3V
I
OUT
= 100 mA
V
IN
= 8V to 12V Step
V
OUT
AC coupled
100 mV/DIV
V
IN
2V/DIV
10 µs/DIV
2011-2015 Microchip Technology Inc.
DS20005004D-page 9
MCP16301/H
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in
Table 3-1
.
3.1
Boost Pin (BOOST)
The high side of the floating supply used to turn the
integrated N-Channel MOSFET on and off is
connected to the boost pin.
3.2
Ground Pin (GND)
The ground or return pin is used for circuit ground
connection. The length of the trace from the input cap
return, output cap return and GND pin should be made as
short as possible to minimize the noise on the GND pin.
3.3
Feedback Voltage Pin (V
FB
)
The V
FB
pin is used to provide output voltage regulation
by using a resistor divider. The V
FB
voltage will be
0.800V typical with the output voltage in regulation.
3.4
Enable Pin (EN)
The EN pin is a logic-level input used to enable or
disable device switching and to lower the quiescent
current while disabled. A logic high (> 1.4V) will enable
the regulator output. A logic low (< 0.4V) will ensure
that the regulator is disabled.
3.5
Power Supply Input Voltage Pin
(V
IN
)
Connect the input voltage source to V
IN
. The input
source should be decoupled to GND with a
4.7 µF-20 µF capacitor, depending on the impedance
of the source and output current. The input capacitor
provides AC current for the power switch and a stable
voltage source for the internal device power. This
capacitor should be connected as close as possible to
the V
IN
and GND pins. For lighter load applications, a
1 µF X7R (or X5R, for limited temperature range, -40 to
+85°C) ceramic capacitor can be used.
3.6
Switch Pin (SW)
The Switch Node pin is connected internally to the
N-Channel switch and externally to the SW node
consisting of the inductor and Schottky diode. The SW
node can rise very fast as a result of the internal switch
turning on. The external Schottky diode should be
connected close to the SW node and GND.
TABLE 3-1:
PIN FUNCTION TABLE
MCP16301/H
SOT-23
Symbol
Description
1
BOOST
Boost voltage that drives the internal NMOS control switch. A bootstrap capacitor is
connected between the BOOST and SW pins.
2
GND
Ground pin.
3
V
FB
Output voltage feedback pin. Connect V
FB
to an external resistor divider to set the
output voltage.
4
EN
Enable pin. Logic high enables the operation. Do not allow this pin to float.
5
V
IN
Input supply voltage pin for power and internal biasing.
6
SW
Output switch node. This pin connects to the inductor, the freewheeling diode and the
bootstrap capacitor.
MCP16301/H
DS20005004D-page 10
2011-2015 Microchip Technology Inc.
NOTES: