MCP14A0601/2 - 6.0A MOSFET Driver with Low Threshold Input and Enable Data Sheet

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 2016 Microchip Technology Inc.

DS20005593A-page  1

MCP14A0601/2

Features

• High Peak Output Current: 6.0A (typical)
• Wide Input Supply Voltage Operating Range:

- 4.5V to 18V

• Low Shoot-Through/Cross-Conduction Current in 

Output Stage

• High Capacitive Load Drive Capability:

- 2500 pF in 10 ns (typical)

• Short Delay Times: 22 ns (t

D1

), 22 ns (t

D2

) (typical)

• Low Supply Current: 375 µA (typical)
• Low-Voltage Threshold Input and Enable with 

Hysteresis

• Latch-Up Protected: Withstands 500 mA Reverse 

Current

• Space-Saving Packages:

- 8-Lead MSOP
- 8-Lead SOIC
- 8-Lead 2 x 3 TDFN

Applications

• Switch Mode Power Supplies
• Pulse Transformer Drive
• Line Drivers
• Level Translator
• Motor and Solenoid Drive

General Description

The MCP14A0601/2 devices are high-speed MOSFET 
drivers that are capable of providing up to 6.0A of peak 
current while operating from a single 4.5V to 18V 
supply. There are two output configurations available; 
inverting (MCP14A0601) and noninverting 
(MCP14A0602). These devices feature low shoot-
through current, fast rise and fall times, and matched 
propagation delays which make them ideal for high
switching frequency applications. 
The MCP14A0601/2 family of devices offers enhanced 
control with Enable functionality. The active-high 
Enable pin can be driven low to drive the output of the 
MCP14A0601/2 low, regardless of the status of the 
Input pin. An integrated pull-up resistor allows the user 
to leave the Enable pin floating for standard operation.
These devices are highly latch-up resistant under any 
condition within their power and voltage ratings. They 
can accept up to 500 mA of reverse current being 
forced back into their outputs without damage or logic 
upset. All terminals are fully protected against 
electrostatic discharge (ESD) up to 2 kV (HBM) and 
200V (MM).

Package Types

* Includes Exposed Thermal Pad (EP); see 

Table 3-1

.

MCP14A0601/MCP14A0602

2 x 3 TDFN*

EN

IN

GND

OUT/OUT
OUT/OUT

1

2
3
4

8

7
6
5 GND

V

DD

V

DD

EP

9

MCP14A0601/MCP14A0602

MSOP/SOIC

EN

IN

GND

OUT/OUT
OUT/OUT

1

2
3
4

8

7
6
5 GND

V

DD

V

DD

6.0A MOSFET Driver with Low Threshold Input and Enable

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MCP14A0601/2

DS20005593A-page  2

 2016 Microchip Technology Inc.

Functional Block Diagram

MCP14A0601

: Inverting

MCP14A0602

: Noninverting

Non-Inverting

Enable

Input

V

DD

Output

Inverting

V

REF

V

REF

V

DD

GND

Internal 

Pull-Up

GND

Noninverting

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 2016 Microchip Technology Inc.

DS20005593A-page  3

MCP14A0601/2

1.0

ELECTRICAL 
CHARACTERISTICS

Absolute Maximum Ratings †

V

DD

, Supply Voltage.............................................+20V

V

IN

, Input Voltage........... (V

DD

 + 0.3V) to (GND - 0.3V)

V

EN

, Enable Voltage....... (V

DD

 + 0.3V) to (GND - 0.3V)

Package Power Dissipation (T

A

 = +50°C)

     8L MSOP ..................................................... 0.63 W
     8L SOIC ....................................................... 1.00 W
     8L 2 x 3 TDFN.............................................. 1.86 W
ESD Protection on all pins .........................2 kV (HBM)

....................................................................200V (MM)

† Notice:

 Stresses above those listed under “Maximum 

Ratings” may cause permanent damage to the device. 
This is a stress rating only and functional operation of 
the device at those or any other conditions above those 
indicated in the operational sections of this 
specification is not intended. Exposure to maximum 
rating conditions for extended periods may affect 
device reliability.

DC CHARACTERISTICS 

Electrical Specifications:

 Unless otherwise noted, T

A

 = +25°C, with 4.5V 

 V

DD

 

 18V.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Input
Input Voltage Range

V

IN

GND - 0.3V

V

DD 

+ 0.3

V

Logic ‘1’ High Input Voltage

V

IH

2.0

1.6

V

Logic ‘0’ Low Input Voltage

V

IL

1.2

0.8

V

Input Voltage Hysteresis

V

HYST(IN)

0.4

V

Input Current

I

IN

-1

+1

µA

0V 

 V

IN

 

 V

DD  

Enable
Enable Voltage Range

V

EN

GND - 0.3V

V

DD 

+ 0.3

V

Logic ‘1’ High Enable Voltage

V

EH

2.0

1.6

V

Logic ‘0’ Low Enable Voltage

V

EL

1.2

0.8

V

Enable Voltage Hysteresis

V

HYST(EN)

0.4

V

Enable Pin Pull-Up Resistance

R

ENBL

1.8

MΩ

V

DD

 = 18V, ENB = GND

Enable Input Current

I

EN

10

µA

V

DD

 = 18V, ENB = GND

Propagation Delay

t

D3

22

29

ns

V

DD

 = 18V, V

EN

 = 5V, see 

Figure 4-3

, (

Note 1

)

Propagation Delay

t

D4

22

29

ns

V

DD

 = 18V, V

EN

 = 5V, see 

Figure 4-3

, (

Note 1

)

Output
High Output Voltage

V

OH

V

DD

 - 0.025

V

I

OUT

 = 0A

Low Output Voltage

V

OL

0.025

V

I

OUT

 = 0A

Output Resistance, High

R

OH

1.2

2.3

I

OUT

 = 10 mA, V

DD

 = 18V 

Output Resistance, Low

R

OL

0.9

2

I

OUT

 = 10 mA, V

DD

 = 18V 

Peak Output Current 

I

PK

6.0

A

V

DD

 = 18V (

Note 1

)

Latch-Up Protection Withstand 
Reverse Current

I

REV

0.5

A

Duty cycle 

 2%, t  300 µs 

(

Note 1

)

Switching Time (

Note 1

)

Rise Time

t

R

10

15

ns

V

DD

 = 18V, C

L

 = 2500 pF, see 

Figure 4-1

Figure 4-2

 

Fall Time

t

F

10

15

ns

V

DD

 = 18V, C

L

 = 2500 pF, see 

Figure 4-1

Figure 4-2

 

Note 1:

Tested during characterization, not production tested.

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Delay Time

t

D1

22

29

ns

V

DD

 = 18V, V

IN

 = 5V, see 

Figure 4-1

 and 

Figure 4-2

 

t

D2

22

29

ns

V

DD

 = 18V, V

IN

 = 5V, see 

Figure 4-1

 and 

Figure 4-2

 

Power Supply
Supply Voltage

V

DD

4.5

18

V

Power Supply Current

I

DD

330

560

µA

V

IN

 = 3V, V

EN

 = 3V

I

DD

360

580

µA

V

IN

 = 0V, V

EN

 = 3V

I

DD

360

580

µA

V

IN

 = 3V, V

EN

 = 0V 

I

DD

375

600

µA

V

IN

 = 0V, V

EN

 = 0V

DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE) 

Electrical Specifications:

 Unless otherwise indicated, over the operating range with 4.5V 

 V

DD

 

 18V.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Input
Input Voltage Range

V

IN

GND - 0.3V

V

DD 

+ 0.3

V

Logic ‘1’ High Input Voltage

V

IH

2.0

1.6

V

Logic ‘0’ Low Input Voltage

V

IL

1.2

0.8

V

Input Voltage Hysteresis

V

HYST(IN)

0.4

V

Input Current

I

IN

-10

+10

µA

0V 

 V

IN

 

 V

DD

Enable
Enable Voltage Range

V

EN

GND - 0.3V

V

DD 

+ 0.3

V

Logic ‘1’ High Enable Voltage

V

EH

2.0

1.6

V

Logic ‘0’ Low Enable Voltage

V

EL

1.2

0.8

V

Enable Voltage Hysteresis

V

HYST(EN)

0.4

V

Enable Input Current

I

EN

12

µA

V

DD

 = 18V, ENB = GND

Propagation Delay

t

D3

26

33

ns

V

DD

 = 18V, V

EN

 = 5V, T

A

 = +125°C, 

see 

Figure 4-3

Propagation Delay

t

D4

26

33

ns

V

DD

 = 18V, V

EN

 = 5V, T

A

 = +125°C, 

see 

Figure 4-3

Output
High Output Voltage

V

OH

V

DD

 - 0.025

V

DC Test

Low Output Voltage

V

OL

0.025

V

DC Test

Output Resistance, High

R

OH

2.9

I

OUT

 = 10 mA, V

DD

 = 18V

Output Resistance, Low

R

OL

2.6

I

OUT

 = 10 mA, V

DD

 = 18V

Note 1:

Tested during characterization, not production tested.

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications:

 Unless otherwise noted, T

A

 = +25°C, with 4.5V 

 V

DD

 

 18V.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Note 1:

Tested during characterization, not production tested.

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DS20005593A-page  5

MCP14A0601/2

Switching Time (

Note 1

)

Rise Time

t

R

12

17

ns

V

DD

 = 18V, C

L

 = 2500 pF, 

T

A

 = +125°C, see 

Figure 4-1

Figure 4-2

Fall Time

t

F

12

17

ns

V

DD

 = 18V, C

L

 = 2500 pF, 

T

A

 = +125°C, see 

Figure 4-1

Figure 4-2

Delay Time

t

D1

26

33

ns

V

DD

 = 18V, V

IN

 = 5V, T

A

 = +125°C, 

see 

Figure 4-1

Figure 4-2

t

D2

26

33

V

DD

 = 18V, V

IN

 = 5V, T

A

 = +125°C, 

see 

Figure 4-1

Figure 4-2

Power Supply
Supply Voltage

V

DD

4.5

18

V

Power Supply Current

I

DD

760

uA

V

IN

 = 3V, V

EN

 = 3V

I

DD

780

uA

V

IN

 = 0V, V

EN

 = 3V

I

DD

780

uA

V

IN

 = 3V, V

EN

 = 0V

I

DD

800

uA

V

IN

 = 0V, V

EN

 = 0V

TEMPERATURE CHARACTERISTICS 

 

 

Electrical Specifications: 

Unless otherwise noted, all parameters apply with 4.5V 

 V

DD

 

 18V

Parameter

Sym.

Min.

Typ.

Max.

Units

Comments

Temperature Ranges
Specified Temperature Range

T

A

-40

+125

°C

Maximum Junction Temperature

T

J

+150

°C

Storage Temperature Range

T

A

-65

+150

°C

Package Thermal Resistances
Junction-to-Ambient Thermal Resistance, 8LD MSOP

JA

158

°C/W

Note 1

Junction-to-Ambient Thermal Resistance, 8LD SOIC

JA

99.8

°C/W

Note 1

Junction-to-Ambient Thermal Resistance, 8LD TDFN

JA

53.7

°C/W

Note 1

Junction-to-Top Characterization Parameter, 8LD MSOP

JT

2.4

°C/W

Note 1

Junction-to-Top Characterization Parameter, 8LD SOIC

JT

5.9

°C/W

Note 1

Junction-to-Top Characterization Parameter, 8LD TDFN

JT

0.5

°C/W

Note 1

Junction-to-Board Characterization Parameter, 8LD MSOP

JB

115.2

°C/W

Note 1

Junction-to-Board Characterization Parameter, 8LD SOIC

JB

64.8

°C/W

Note 1

Junction-to-Board Characterization Parameter, 8LD TDFN

JB

24.4

°C/W

Note 1

Note 1:

Parameter is determined using High K 2S2P 4-Layer board as described in JESD 51-7, as well as JESD 
51-5 for packages with exposed pads.

DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE) (CONTINUED)

Electrical Specifications:

 Unless otherwise indicated, over the operating range with 4.5V 

 V

DD

 

 18V.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Note 1:

Tested during characterization, not production tested.

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MCP14A0601/2

DS20005593A-page  6

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2.0

TYPICAL PERFORMANCE CURVES

Note:

The graphs and tables provided following this note are a statistical summary based on a limited number of 
samples and are provided for informational purposes only. The performance characteristics listed herein 
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified 
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note:

 Unless otherwise indicated, T

A

 = +25°C with 4.5V 

 V

DD

 18V.

FIGURE 2-1:

Rise Time vs. Supply 

Voltage.

FIGURE 2-2:

Rise Time vs. Capacitive 

Load.

FIGURE 2-3:

Fall Time vs. Supply 

Voltage.

FIGURE 2-4:

Fall Time vs. Capacitive 

Load.

FIGURE 2-5:

Rise and Fall Time vs. 

Temperature.

FIGURE 2-6:

Crossover Current vs. 

Supply Voltage.

0

10

20

30

40

50

60

70

80

4

6

8

10

12

14

16

18

Rise T

ime (ns)

Supply Voltage (V)

10000pF
6800pF
4700pF
2500pF
1000pF

10000pF
6800pF
4700pF
2500pF
1000pF

10000pF
6800pF
4700pF
2500pF
1000pF

0

10

20

30

40

50

60

70

80

1000

10000

Rise T

ime (ns)

Capacitive Load (pF)

18V

12V

5V

0

10

20

30

40

50

60

4

6

8

10

12

14

16

18

Fall T

ime (ns)

Supply Voltage (V)

10000pF
6800pF
4700pF
2500pF
1000pF

0

10

20

30

40

50

60

1000

10000

Fall T

ime (ns)

Capacitive Load (pF)

18V

12V

5V

8

10

12

14

16

18

-40 -25 -10

5

20

35

50

65

80

95 110 125

T

ime (ns)

Temperature (°C)

V

DD

= 18V

t

F

, 4700pF

t

R

, 4700pF

t

R

, 2500pF

t

F

, 2500pF

10

100

1000

10000

4

6

8

10

12

14

16

18

Crossover Current (uA)

Supply Voltage (V)

1MHz
500kHz
200kHz
100kHz
50kHz

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DS20005593A-page  7

MCP14A0601/2

Note:

 Unless otherwise indicated, T

A

 = +25°C with 4.5V 

 V

DD

 18V.

FIGURE 2-7:

Input Propagation Delay vs. 

Supply Voltage.

FIGURE 2-8:

Input Propagation Delay 

Time vs. Input Amplitude.

FIGURE 2-9:

Input Propagation Delay vs. 

Temperature.

FIGURE 2-10:

Enable Propagation Delay 

vs. Supply Voltage.

FIGURE 2-11:

Enable Propagation Delay 

Time vs. Enable Voltage Amplitude.

FIGURE 2-12:

Enable Propagation Delay 

vs. Temperature.

15

20

25

30

35

40

45

50

4

6

8

10

12

14

16

18

Input Propagation 

Delay

 (ns)

Supply Voltage (V)

V

IN

= 5V

t

D1

t

D2

15

20

25

30

35

40

2

4

6

8

10

12

14

16

18

Input Propogation 

Delay

 (ns)

Input Voltage Amplitude (V)

t

D2

t

D1

V

DD

= 18V

18

20

22

24

26

-40 -25 -10

5

20

35

50

65

80

95 110 125

Input Propagation 

Delay

 (ns)

Temperature (°C)

V

DD

= 18V

V

IN

= 5V

t

D2

t

D1

15

20

25

30

35

40

45

50

4

6

8

10

12

14

16

18

Enable Propagation Delay

 (ns)

Supply Voltage (V)

V

EN

= 5V

t

D3

t

D4

15

20

25

30

35

40

2

4

6

8

10

12

14

16

18

Enable Propagation Delay

 (ns)

Enable Voltage Amplitude (V)

t

D4

t

D3

V

DD

= 18V

18

20

22

24

26

-40 -25 -10

5

20

35

50

65

80

95 110 125

Enable Propagation Delay

 (ns)

Temperature (°C)

t

D4

t

D3

V

DD

= 18V

V

EN

= 5V

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Note:

 Unless otherwise indicated, T

A

 = +25°C with 4.5V 

 V

DD

 18V.

FIGURE 2-13:

Quiescent Supply Current 

vs. Supply Voltage.

FIGURE 2-14:

Quiescent Supply Current 

vs. Temperature.

FIGURE 2-15:

Input Threshold vs. 

Temperature.

FIGURE 2-16:

Input Threshold vs. Supply 

Voltage.

FIGURE 2-17:

Enable Threshold vs. 

Temperature.

FIGURE 2-18:

Enable Threshold vs. 

Supply Voltage.

250

300

350

400

4

6

8

10

12

14

16

18

Quiescent Current (uA)

Supply Voltage (V)

V

IN

= 3V,V

EN

= 3V  

V

IN

= 0V,V

EN

= 0V  

V

IN

= 3V,V

EN

= 0V  or V

IN

= 0V,V

EN

= 3V   

200

250

300

350

400

450

500

-40 -25 -10

5

20

35

50

65

80

95 110 125

Quiescent Current (uA)

Temperature (°C)

V

DD

= 18V

V

IN

= 3V,V

EN

= 3V  

V

IN

= 0V,V

EN

= 0V  

V

IN

= 3V,V

EN

= 0V  or V

IN

= 0V,V

EN

= 3V   

1

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

-40 -25 -10

5

20

35

50

65

80

95 110 125

Input Threshold (V)

Temperature (°C)

V

DD

= 18V

V

IL

V

IH

1

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

4

6

8

10

12

14

16

18

Input Threshold (V)

Supply Voltage (V)

V

IL

V

IH

1

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

-40 -25 -10

5

20

35

50

65

80

95 110 125

Enable Threshold (V)

Temperature (°C)

V

DD

= 18V

V

EL

V

EH

1

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

4

6

8

10

12

14

16

18

Enable Threshold (V)

Supply Voltage (V)

V

EL

V

EH

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 2016 Microchip Technology Inc.

DS20005593A-page  9

MCP14A0601/2

Note:

 Unless otherwise indicated, T

A

 = +25°C with 4.5V 

 V

DD

 18V.

FIGURE 2-19:

Output Resistance (Output 

High) vs. Supply Voltage.

FIGURE 2-20:

Output Resistance (Output 

Low) vs. Supply Voltage.

FIGURE 2-21:

Supply Current vs. 

Capacitive Load (V

DD

 = 18V).

FIGURE 2-22:

Supply Current vs. 

Capacitive Load (V

DD

 = 12V).

FIGURE 2-23:

Supply Current vs. 

Capacitive Load (V

DD

 = 6V).

FIGURE 2-24:

Supply Current vs. 

Frequency (V

DD

 = 18V).

1

1.5

2

2.5

3

4

6

8

10

12

14

16

18

R

OH

-

O

utput Resistance (

Ÿ

)

Supply Voltage (V)

T

A

= +25°C

T

A

= +125°C

V

IN

= 0V (MCP14A0601)

V

IN

= 5V (MCP14A0602)

0.5

1

1.5

2

4

6

8

10

12

14

16

18

R

OL

-

O

utput Resistance 

)

Supply Voltage (V)

T

A

= +25°C 

T

A

= +125°C 

V

IN

= 5V (MCP14A0601)

V

IN

= 0V (MCP14A0602)

0

10

20

30

40

50

60

70

80

90

100

100

1000

10000

Supply

 Current 

(mA)

Capacitive Load (pF)

1 MHz
500kHz
200kHz
100kHz
50kHz
10kHz

V

DD

= 18V

0

5

10

15

20

25

30

35

40

45

50

100

1000

10000

Supply

 Current 

(mA)

Capacitive Load (pF)

1 MHz
500kHz
200kHz
100kHz
50kHz
10kHz

V

DD

= 12V

0

5

10

15

20

25

30

100

1000

10000

Supply

 Current 

(mA)

Capacitive Load (pF)

1 MHz
500kHz
200kHz
100kHz
50kHz
10kHz

V

DD

= 6V

0

10

20

30

40

50

60

70

80

90

100

10

100

1000

Supply

 Current 

(mA)

Switching Frequency (kHz)

10000pF
6800pF
3300pF
1000pF
470pF
100pF

V

DD

= 18V

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/20005593A-html.html
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MCP14A0601/2

DS20005593A-page  10

 2016 Microchip Technology Inc.

Note:

 Unless otherwise indicated, T

A

 = +25°C with 4.5V 

 V

DD

 18V.

FIGURE 2-25:

Supply Current vs. 

Frequency (V

DD

 = 12V).

FIGURE 2-26:

Supply Current vs. 

Frequency (V

DD

 = 6V).

FIGURE 2-27:

Enable Current vs. Supply 

Voltage.

0

5

10

15

20

25

30

35

40

45

50

10

100

1000

Supply

 Current 

(mA)

Switching Frequency (kHz)

10000pF
6800pF
3300pF
1000pF
470pF
100pF

V

DD

= 12V

0

5

10

15

20

25

30

10

100

1000

Supply

 Current 

(mA)

Switching Frequency (kHz)

10000pF
6800pF
3300pF
1000pF
470pF
100pF

V

DD

= 6V

8

9

10

11

12

13

14

4

6

8

10

12

14

16

18

Enable Current (uA)

Supply Voltage (V)

T

A

= +25°C 

T

A

= +125°C 

Maker
Microchip Technology Inc.