2016 Microchip Technology Inc.
DS20005593A-page 1
MCP14A0601/2
Features
• High Peak Output Current: 6.0A (typical)
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• High Capacitive Load Drive Capability:
- 2500 pF in 10 ns (typical)
• Short Delay Times: 22 ns (t
D1
), 22 ns (t
D2
) (typical)
• Low Supply Current: 375 µA (typical)
• Low-Voltage Threshold Input and Enable with
Hysteresis
• Latch-Up Protected: Withstands 500 mA Reverse
Current
• Space-Saving Packages:
- 8-Lead MSOP
- 8-Lead SOIC
- 8-Lead 2 x 3 TDFN
Applications
• Switch Mode Power Supplies
• Pulse Transformer Drive
• Line Drivers
• Level Translator
• Motor and Solenoid Drive
General Description
The MCP14A0601/2 devices are high-speed MOSFET
drivers that are capable of providing up to 6.0A of peak
current while operating from a single 4.5V to 18V
supply. There are two output configurations available;
inverting (MCP14A0601) and noninverting
(MCP14A0602). These devices feature low shoot-
through current, fast rise and fall times, and matched
propagation delays which make them ideal for high
switching frequency applications.
The MCP14A0601/2 family of devices offers enhanced
control with Enable functionality. The active-high
Enable pin can be driven low to drive the output of the
MCP14A0601/2 low, regardless of the status of the
Input pin. An integrated pull-up resistor allows the user
to leave the Enable pin floating for standard operation.
These devices are highly latch-up resistant under any
condition within their power and voltage ratings. They
can accept up to 500 mA of reverse current being
forced back into their outputs without damage or logic
upset. All terminals are fully protected against
electrostatic discharge (ESD) up to 2 kV (HBM) and
200V (MM).
Package Types
* Includes Exposed Thermal Pad (EP); see
Table 3-1
.
MCP14A0601/MCP14A0602
2 x 3 TDFN*
EN
IN
GND
OUT/OUT
OUT/OUT
1
2
3
4
8
7
6
5 GND
V
DD
V
DD
EP
9
MCP14A0601/MCP14A0602
MSOP/SOIC
EN
IN
GND
OUT/OUT
OUT/OUT
1
2
3
4
8
7
6
5 GND
V
DD
V
DD
6.0A MOSFET Driver with Low Threshold Input and Enable
MCP14A0601/2
DS20005593A-page 2
2016 Microchip Technology Inc.
Functional Block Diagram
MCP14A0601
: Inverting
MCP14A0602
: Noninverting
Non-Inverting
Enable
Input
V
DD
Output
Inverting
V
REF
V
REF
V
DD
GND
Internal
Pull-Up
GND
Noninverting
2016 Microchip Technology Inc.
DS20005593A-page 3
MCP14A0601/2
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
DD
, Supply Voltage.............................................+20V
V
IN
, Input Voltage........... (V
DD
+ 0.3V) to (GND - 0.3V)
V
EN
, Enable Voltage....... (V
DD
+ 0.3V) to (GND - 0.3V)
Package Power Dissipation (T
A
= +50°C)
8L MSOP ..................................................... 0.63 W
8L SOIC ....................................................... 1.00 W
8L 2 x 3 TDFN.............................................. 1.86 W
ESD Protection on all pins .........................2 kV (HBM)
....................................................................200V (MM)
† Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, T
A
= +25°C, with 4.5V
V
DD
18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Input
Input Voltage Range
V
IN
GND - 0.3V
—
V
DD
+ 0.3
V
Logic ‘1’ High Input Voltage
V
IH
2.0
1.6
—
V
Logic ‘0’ Low Input Voltage
V
IL
—
1.2
0.8
V
Input Voltage Hysteresis
V
HYST(IN)
—
0.4
—
V
Input Current
I
IN
-1
—
+1
µA
0V
V
IN
V
DD
Enable
Enable Voltage Range
V
EN
GND - 0.3V
—
V
DD
+ 0.3
V
Logic ‘1’ High Enable Voltage
V
EH
2.0
1.6
—
V
Logic ‘0’ Low Enable Voltage
V
EL
—
1.2
0.8
V
Enable Voltage Hysteresis
V
HYST(EN)
—
0.4
—
V
Enable Pin Pull-Up Resistance
R
ENBL
—
1.8
—
MΩ
V
DD
= 18V, ENB = GND
Enable Input Current
I
EN
—
10
—
µA
V
DD
= 18V, ENB = GND
Propagation Delay
t
D3
—
22
29
ns
V
DD
= 18V, V
EN
= 5V, see
Figure 4-3
, (
Note 1
)
Propagation Delay
t
D4
—
22
29
ns
V
DD
= 18V, V
EN
= 5V, see
Figure 4-3
, (
Note 1
)
Output
High Output Voltage
V
OH
V
DD
- 0.025
—
—
V
I
OUT
= 0A
Low Output Voltage
V
OL
—
—
0.025
V
I
OUT
= 0A
Output Resistance, High
R
OH
—
1.2
2.3
Ω
I
OUT
= 10 mA, V
DD
= 18V
Output Resistance, Low
R
OL
—
0.9
2
Ω
I
OUT
= 10 mA, V
DD
= 18V
Peak Output Current
I
PK
—
6.0
—
A
V
DD
= 18V (
Note 1
)
Latch-Up Protection Withstand
Reverse Current
I
REV
0.5
—
—
A
Duty cycle
2%, t 300 µs
(
Note 1
)
Switching Time (
Note 1
)
Rise Time
t
R
—
10
15
ns
V
DD
= 18V, C
L
= 2500 pF, see
Figure 4-1
,
Figure 4-2
Fall Time
t
F
—
10
15
ns
V
DD
= 18V, C
L
= 2500 pF, see
Figure 4-1
,
Figure 4-2
Note 1:
Tested during characterization, not production tested.
MCP14A0601/2
DS20005593A-page 4
2016 Microchip Technology Inc.
Delay Time
t
D1
—
22
29
ns
V
DD
= 18V, V
IN
= 5V, see
Figure 4-1
and
Figure 4-2
t
D2
—
22
29
ns
V
DD
= 18V, V
IN
= 5V, see
Figure 4-1
and
Figure 4-2
Power Supply
Supply Voltage
V
DD
4.5
—
18
V
Power Supply Current
I
DD
—
330
560
µA
V
IN
= 3V, V
EN
= 3V
I
DD
—
360
580
µA
V
IN
= 0V, V
EN
= 3V
I
DD
—
360
580
µA
V
IN
= 3V, V
EN
= 0V
I
DD
—
375
600
µA
V
IN
= 0V, V
EN
= 0V
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications:
Unless otherwise indicated, over the operating range with 4.5V
V
DD
18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Input
Input Voltage Range
V
IN
GND - 0.3V
—
V
DD
+ 0.3
V
Logic ‘1’ High Input Voltage
V
IH
2.0
1.6
—
V
Logic ‘0’ Low Input Voltage
V
IL
—
1.2
0.8
V
Input Voltage Hysteresis
V
HYST(IN)
—
0.4
—
V
Input Current
I
IN
-10
—
+10
µA
0V
V
IN
V
DD
Enable
Enable Voltage Range
V
EN
GND - 0.3V
—
V
DD
+ 0.3
V
Logic ‘1’ High Enable Voltage
V
EH
2.0
1.6
—
V
Logic ‘0’ Low Enable Voltage
V
EL
—
1.2
0.8
V
Enable Voltage Hysteresis
V
HYST(EN)
—
0.4
—
V
Enable Input Current
I
EN
—
12
—
µA
V
DD
= 18V, ENB = GND
Propagation Delay
t
D3
—
26
33
ns
V
DD
= 18V, V
EN
= 5V, T
A
= +125°C,
see
Figure 4-3
Propagation Delay
t
D4
—
26
33
ns
V
DD
= 18V, V
EN
= 5V, T
A
= +125°C,
see
Figure 4-3
Output
High Output Voltage
V
OH
V
DD
- 0.025
—
—
V
DC Test
Low Output Voltage
V
OL
—
—
0.025
V
DC Test
Output Resistance, High
R
OH
—
—
2.9
Ω
I
OUT
= 10 mA, V
DD
= 18V
Output Resistance, Low
R
OL
—
—
2.6
Ω
I
OUT
= 10 mA, V
DD
= 18V
Note 1:
Tested during characterization, not production tested.
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise noted, T
A
= +25°C, with 4.5V
V
DD
18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Note 1:
Tested during characterization, not production tested.
2016 Microchip Technology Inc.
DS20005593A-page 5
MCP14A0601/2
Switching Time (
Note 1
)
Rise Time
t
R
—
12
17
ns
V
DD
= 18V, C
L
= 2500 pF,
T
A
= +125°C, see
Figure 4-1
,
Figure 4-2
Fall Time
t
F
—
12
17
ns
V
DD
= 18V, C
L
= 2500 pF,
T
A
= +125°C, see
Figure 4-1
,
Figure 4-2
Delay Time
t
D1
—
26
33
ns
V
DD
= 18V, V
IN
= 5V, T
A
= +125°C,
see
Figure 4-1
,
Figure 4-2
t
D2
—
26
33
V
DD
= 18V, V
IN
= 5V, T
A
= +125°C,
see
Figure 4-1
,
Figure 4-2
Power Supply
Supply Voltage
V
DD
4.5
—
18
V
Power Supply Current
I
DD
—
—
760
uA
V
IN
= 3V, V
EN
= 3V
I
DD
—
—
780
uA
V
IN
= 0V, V
EN
= 3V
I
DD
—
—
780
uA
V
IN
= 3V, V
EN
= 0V
I
DD
—
—
800
uA
V
IN
= 0V, V
EN
= 0V
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, all parameters apply with 4.5V
V
DD
18V
Parameter
Sym.
Min.
Typ.
Max.
Units
Comments
Temperature Ranges
Specified Temperature Range
T
A
-40
—
+125
°C
Maximum Junction Temperature
T
J
—
—
+150
°C
Storage Temperature Range
T
A
-65
—
+150
°C
Package Thermal Resistances
Junction-to-Ambient Thermal Resistance, 8LD MSOP
JA
—
158
—
°C/W
Note 1
Junction-to-Ambient Thermal Resistance, 8LD SOIC
JA
—
99.8
—
°C/W
Note 1
Junction-to-Ambient Thermal Resistance, 8LD TDFN
JA
—
53.7
—
°C/W
Note 1
Junction-to-Top Characterization Parameter, 8LD MSOP
JT
—
2.4
—
°C/W
Note 1
Junction-to-Top Characterization Parameter, 8LD SOIC
JT
—
5.9
—
°C/W
Note 1
Junction-to-Top Characterization Parameter, 8LD TDFN
JT
—
0.5
—
°C/W
Note 1
Junction-to-Board Characterization Parameter, 8LD MSOP
JB
—
115.2
—
°C/W
Note 1
Junction-to-Board Characterization Parameter, 8LD SOIC
JB
—
64.8
—
°C/W
Note 1
Junction-to-Board Characterization Parameter, 8LD TDFN
JB
—
24.4
—
°C/W
Note 1
Note 1:
Parameter is determined using High K 2S2P 4-Layer board as described in JESD 51-7, as well as JESD
51-5 for packages with exposed pads.
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE) (CONTINUED)
Electrical Specifications:
Unless otherwise indicated, over the operating range with 4.5V
V
DD
18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Note 1:
Tested during characterization, not production tested.
MCP14A0601/2
DS20005593A-page 6
2016 Microchip Technology Inc.
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
18V.
FIGURE 2-1:
Rise Time vs. Supply
Voltage.
FIGURE 2-2:
Rise Time vs. Capacitive
Load.
FIGURE 2-3:
Fall Time vs. Supply
Voltage.
FIGURE 2-4:
Fall Time vs. Capacitive
Load.
FIGURE 2-5:
Rise and Fall Time vs.
Temperature.
FIGURE 2-6:
Crossover Current vs.
Supply Voltage.
0
10
20
30
40
50
60
70
80
4
6
8
10
12
14
16
18
Rise T
ime (ns)
Supply Voltage (V)
10000pF
6800pF
4700pF
2500pF
1000pF
10000pF
6800pF
4700pF
2500pF
1000pF
10000pF
6800pF
4700pF
2500pF
1000pF
0
10
20
30
40
50
60
70
80
1000
10000
Rise T
ime (ns)
Capacitive Load (pF)
18V
12V
5V
0
10
20
30
40
50
60
4
6
8
10
12
14
16
18
Fall T
ime (ns)
Supply Voltage (V)
10000pF
6800pF
4700pF
2500pF
1000pF
0
10
20
30
40
50
60
1000
10000
Fall T
ime (ns)
Capacitive Load (pF)
18V
12V
5V
8
10
12
14
16
18
-40 -25 -10
5
20
35
50
65
80
95 110 125
T
ime (ns)
Temperature (°C)
V
DD
= 18V
t
F
, 4700pF
t
R
, 4700pF
t
R
, 2500pF
t
F
, 2500pF
10
100
1000
10000
4
6
8
10
12
14
16
18
Crossover Current (uA)
Supply Voltage (V)
1MHz
500kHz
200kHz
100kHz
50kHz
2016 Microchip Technology Inc.
DS20005593A-page 7
MCP14A0601/2
Note:
Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
18V.
FIGURE 2-7:
Input Propagation Delay vs.
Supply Voltage.
FIGURE 2-8:
Input Propagation Delay
Time vs. Input Amplitude.
FIGURE 2-9:
Input Propagation Delay vs.
Temperature.
FIGURE 2-10:
Enable Propagation Delay
vs. Supply Voltage.
FIGURE 2-11:
Enable Propagation Delay
Time vs. Enable Voltage Amplitude.
FIGURE 2-12:
Enable Propagation Delay
vs. Temperature.
15
20
25
30
35
40
45
50
4
6
8
10
12
14
16
18
Input Propagation
Delay
(ns)
Supply Voltage (V)
V
IN
= 5V
t
D1
t
D2
15
20
25
30
35
40
2
4
6
8
10
12
14
16
18
Input Propogation
Delay
(ns)
Input Voltage Amplitude (V)
t
D2
t
D1
V
DD
= 18V
18
20
22
24
26
-40 -25 -10
5
20
35
50
65
80
95 110 125
Input Propagation
Delay
(ns)
Temperature (°C)
V
DD
= 18V
V
IN
= 5V
t
D2
t
D1
15
20
25
30
35
40
45
50
4
6
8
10
12
14
16
18
Enable Propagation Delay
(ns)
Supply Voltage (V)
V
EN
= 5V
t
D3
t
D4
15
20
25
30
35
40
2
4
6
8
10
12
14
16
18
Enable Propagation Delay
(ns)
Enable Voltage Amplitude (V)
t
D4
t
D3
V
DD
= 18V
18
20
22
24
26
-40 -25 -10
5
20
35
50
65
80
95 110 125
Enable Propagation Delay
(ns)
Temperature (°C)
t
D4
t
D3
V
DD
= 18V
V
EN
= 5V
MCP14A0601/2
DS20005593A-page 8
2016 Microchip Technology Inc.
Note:
Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
18V.
FIGURE 2-13:
Quiescent Supply Current
vs. Supply Voltage.
FIGURE 2-14:
Quiescent Supply Current
vs. Temperature.
FIGURE 2-15:
Input Threshold vs.
Temperature.
FIGURE 2-16:
Input Threshold vs. Supply
Voltage.
FIGURE 2-17:
Enable Threshold vs.
Temperature.
FIGURE 2-18:
Enable Threshold vs.
Supply Voltage.
250
300
350
400
4
6
8
10
12
14
16
18
Quiescent Current (uA)
Supply Voltage (V)
V
IN
= 3V,V
EN
= 3V
V
IN
= 0V,V
EN
= 0V
V
IN
= 3V,V
EN
= 0V or V
IN
= 0V,V
EN
= 3V
200
250
300
350
400
450
500
-40 -25 -10
5
20
35
50
65
80
95 110 125
Quiescent Current (uA)
Temperature (°C)
V
DD
= 18V
V
IN
= 3V,V
EN
= 3V
V
IN
= 0V,V
EN
= 0V
V
IN
= 3V,V
EN
= 0V or V
IN
= 0V,V
EN
= 3V
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
-40 -25 -10
5
20
35
50
65
80
95 110 125
Input Threshold (V)
Temperature (°C)
V
DD
= 18V
V
IL
V
IH
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
4
6
8
10
12
14
16
18
Input Threshold (V)
Supply Voltage (V)
V
IL
V
IH
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
-40 -25 -10
5
20
35
50
65
80
95 110 125
Enable Threshold (V)
Temperature (°C)
V
DD
= 18V
V
EL
V
EH
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
4
6
8
10
12
14
16
18
Enable Threshold (V)
Supply Voltage (V)
V
EL
V
EH
2016 Microchip Technology Inc.
DS20005593A-page 9
MCP14A0601/2
Note:
Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
18V.
FIGURE 2-19:
Output Resistance (Output
High) vs. Supply Voltage.
FIGURE 2-20:
Output Resistance (Output
Low) vs. Supply Voltage.
FIGURE 2-21:
Supply Current vs.
Capacitive Load (V
DD
= 18V).
FIGURE 2-22:
Supply Current vs.
Capacitive Load (V
DD
= 12V).
FIGURE 2-23:
Supply Current vs.
Capacitive Load (V
DD
= 6V).
FIGURE 2-24:
Supply Current vs.
Frequency (V
DD
= 18V).
1
1.5
2
2.5
3
4
6
8
10
12
14
16
18
R
OH
-
O
utput Resistance (
)
Supply Voltage (V)
T
A
= +25°C
T
A
= +125°C
V
IN
= 0V (MCP14A0601)
V
IN
= 5V (MCP14A0602)
0.5
1
1.5
2
4
6
8
10
12
14
16
18
R
OL
-
O
utput Resistance
(
)
Supply Voltage (V)
T
A
= +25°C
T
A
= +125°C
V
IN
= 5V (MCP14A0601)
V
IN
= 0V (MCP14A0602)
0
10
20
30
40
50
60
70
80
90
100
100
1000
10000
Supply
Current
(mA)
Capacitive Load (pF)
1 MHz
500kHz
200kHz
100kHz
50kHz
10kHz
V
DD
= 18V
0
5
10
15
20
25
30
35
40
45
50
100
1000
10000
Supply
Current
(mA)
Capacitive Load (pF)
1 MHz
500kHz
200kHz
100kHz
50kHz
10kHz
V
DD
= 12V
0
5
10
15
20
25
30
100
1000
10000
Supply
Current
(mA)
Capacitive Load (pF)
1 MHz
500kHz
200kHz
100kHz
50kHz
10kHz
V
DD
= 6V
0
10
20
30
40
50
60
70
80
90
100
10
100
1000
Supply
Current
(mA)
Switching Frequency (kHz)
10000pF
6800pF
3300pF
1000pF
470pF
100pF
V
DD
= 18V
MCP14A0601/2
DS20005593A-page 10
2016 Microchip Technology Inc.
Note:
Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
18V.
FIGURE 2-25:
Supply Current vs.
Frequency (V
DD
= 12V).
FIGURE 2-26:
Supply Current vs.
Frequency (V
DD
= 6V).
FIGURE 2-27:
Enable Current vs. Supply
Voltage.
0
5
10
15
20
25
30
35
40
45
50
10
100
1000
Supply
Current
(mA)
Switching Frequency (kHz)
10000pF
6800pF
3300pF
1000pF
470pF
100pF
V
DD
= 12V
0
5
10
15
20
25
30
10
100
1000
Supply
Current
(mA)
Switching Frequency (kHz)
10000pF
6800pF
3300pF
1000pF
470pF
100pF
V
DD
= 6V
8
9
10
11
12
13
14
4
6
8
10
12
14
16
18
Enable Current (uA)
Supply Voltage (V)
T
A
= +25°C
T
A
= +125°C