MCP14A0451/2 Data Sheet

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 2016 Microchip Technology Inc.

DS20005673A-page 1

MCP14A0451/2

Features

• High Peak Output Current: 4.5A (typical)
• Wide Input Supply Voltage Operating Range:

- 4.5V to 18V

• Low Shoot-Through/Cross-Conduction Current in 

Output Stage

• High Capacitive Load Drive Capability:

- 2200 pF in 9.5 ns (typical)

• Short Delay Times: 16 ns (t

D1

), 19.5 ns (t

D2

(typical)

• Low Supply Current: 355 µA (typical)
• Low-Voltage Threshold Input and Enable with 

Hysteresis

• Latch-Up Protected: Withstands 500 mA Reverse 

Current

• Space-Saving Packages:

- 8-Lead MSOP
- 8-Lead SOIC
- 8-Lead 2 x 2 WDFN

Applications

• Switch Mode Power Supplies
• Pulse Transformer Drive
• Line Drivers
• Level Translator
• Motor and Solenoid Drive

General Description

The MCP14A0451/2 devices are high-speed MOSFET
drivers that are capable of providing up to 4.5A of peak
current while operating from a single 4.5V to 18V
supply. There are two output configurations available;
inverting (MCP14A0451) and noninverting
(MCP14A0452). These devices feature low shoot-
through current, fast rise and fall times, and short
propagation delays which make them ideal for high
switching frequency applications.
The MCP14A0451/2 family of devices offer enhanced
control with Enable functionality. The active-high
Enable pin can be driven low to drive the output of the
MCP14A0451/2 low, regardless of the status of the
Input pin. An integrated pull-up resistor allows the user
to leave the Enable pin floating for standard operation.
These devices are highly latch-up resistant under any
condition within their power and voltage ratings. They
can accept up to 500 mA of reverse current being
forced back into their outputs without damage or logic
upset. All terminals are fully protected against
electrostatic discharge (ESD) up to 2 kV (HBM) and
200V (MM).

Package Types

* Includes Exposed Thermal Pad (EP); see 

Table 3-1

.

MCP14A0451

MSOP/SOIC

EN

IN

GND

OUT

OUT

1

2

3
4

8

7

6
5 GND

V

DD

V

DD

MCP14A0452

MSOP/SOIC

EN

IN

GND

OUT

OUT

1

2

3
4

8

7

6
5 GND

V

DD

V

DD

EN

IN

GND

OUT

OUT

GND

V

DD

V

DD

MCP14A0451

2 x 2  WDFN*

1

2
3
4

8

7
6
5

EP*

9

EN

IN

GND

OUT

OUT

GND

V

DD

V

DD

MCP14A0452

2 x 2  WDFN*

1

2
3
4

8

7
6
5

EP*

9

4.5A MOSFET Driver 

with Low Threshold Input and Enable

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MCP14A0451/2

DS20005673A-page 2

 2016 Microchip Technology Inc.

Functional Block Diagram

Noninverting

Enable

Input

V

DD

Output

Inverting

V

REF

V

REF

V

DD

GND

Internal 

Pull-Up

MCP14A0451 Inverting

MCP14A0452 Noninverting

GND

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 2016 Microchip Technology Inc.

DS20005673A-page 3

MCP14A0451/2

1.0

ELECTRICAL 
CHARACTERISTICS

1.1

Electrical Specifications

Absolute Maximum Ratings †

V

DD

, Supply Voltage..................................................................................................................................................+20V

V

IN

, Input Voltage................................................................................................................(V

DD

+ 0.3V) to (GND - 0.3V)

V

EN

, Enable Voltage............................................................................................................(V

DD

+ 0.3V) to (GND - 0.3V)

Package Power Dissipation (T

A

= +50°C)

               8L MSOP .................................................................................................................................................0.58W
               8L SOIC ...................................................................................................................................................0.90W
               8L 2 X 2 WDFN ........................................................................................................................................1.63W
ESD protection on all pins ..............................................................................................................................2 kV (HBM)
ESD protection on all pins .............................................................................................................................. 200V (MM)

† Notice:

 Stresses above those listed under “Maximum ratings” may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at those or any other conditions above those indicated in
the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.

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MCP14A0451/2

DS20005673A-page 4

 2016 Microchip Technology Inc.

TABLE 1-1:

DC CHARACTERISTICS

Electrical Specifications:

 Unless otherwise noted, T

A

= +25°C, with 4.5V

 V

DD

 18V.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Input
Input Voltage Range

V

IN

GND - 0.3V

V

DD

+ 0.3

V

Logic ‘1’ High Input Voltage

V

IH

2.0

1.6

V

Logic ‘0’ Low Input Voltage

V

IL

1.3

0.8

V

Input Voltage Hysteresis

V

HYST(IN)

0.3

V

Input Current

I

IN

-1

+1

µA

0V

 V

IN

 V

DD  

Enable
Enable Voltage Range

V

EN

GND - 0.3V

V

DD

+ 0.3

V

Logic ‘1’ High Enable Voltage

V

EH

2.0

1.6

V

Logic ‘0’ Low Enable Voltage

V

EL

1.3

0.8

V

Enable Voltage Hysteresis

V

HYST(EN)

0.3

V

Enable Pin Pull-Up Resistance

R

ENBL

1.5

MΩ

V

DD

= 18V,  ENB = A

GND

Enable Input Current

I

EN

12

µA

V

DD

= 18V,  ENB = A

GND

Propagation Delay

t

D3

15

22

ns

V

DD

= 18V,  V

EN

= 5V,  see 

Figure 4-3

, (

Note 1

)

Propagation Delay

t

D4

20

27

ns

V

DD

= 18V,  V

EN

= 5V,  see 

Figure 4-3

, (

Note 1

)

Output
High Output Voltage

V

OH

V

DD

- 0.025

V

I

OUT

= 0A

Low Output Voltage

V

OL

0.025

V

I

OUT

= 0A

Output Resistance, High

R

OH

1.6

2.6

I

OUT

= 10 mA,  V

DD

= 18V 

Output Resistance, Low

R

OL

1.2

2.2

I

OUT

= 10 mA,  V

DD

= 18V 

Peak Output Current 

I

PK

4.5

A

V

DD

= 18V (

Note 1

)

Latch-Up Protection Withstand 
Reverse Current

I

REV

0.5

A

Duty cycle

 2%, t   300 µs 

(

Note 1

)

Switching Time (

Note 1

)

Rise Time

t

R

9.5

14

ns

V

DD

= 18V,  C

L

= 2200 pF, see 

Figure 4-1

Figure 4-2

 

Fall Time

t

F

9

14

ns

V

DD

= 18V,  C

L

= 2200 pF, see 

Figure 4-1

Figure 4-2

 

Delay Time

t

D1

16

23

ns

V

DD

= 18V,  V

IN

= 5V,  see 

Figure 4-1

Figure 4-2

 

t

D2

19.5

26.5

ns

V

DD

= 18V,  V

IN

= 5V,  see 

Figure 4-1

Figure 4-2

 

Power Supply
Supply Voltage

V

DD

4.5

18

V

Power Supply Current

I

DD

355

580

µA

V

IN

= 3V,  V

EN

 = 3V

I

DD

355

580

µA

V

IN

= 0V,  V

EN

 = 3V

I

DD

355

580

µA

V

IN

= 3V,  V

EN

 = 0V 

I

DD

355

580

µA

V

IN

= 0V,  V

EN

 = 0V

Note 1:

Tested during characterization, not production tested.

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 2016 Microchip Technology Inc.

DS20005673A-page 5

MCP14A0451/2

TABLE 1-2:

DC CHARACTERISTICS (OVER OPERATING TEMP. RANGE) 

Electrical Specifications:

 Unless otherwise indicated, over the operating range with 4.5V

 V

DD

 18V.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Input
Input Voltage Range

V

IN

GND - 0.3V

V

DD

+ 0.3

V

Logic ‘1’ High Input Voltage

V

IH

2.0

1.6

V

Logic ‘0’ Low Input Voltage

V

IL

1.3

0.8

V

Input Voltage Hysteresis

V

HYST(IN)

0.3

V

Input Current

I

IN

-10

+10

µA

0V

 V

IN

 V

DD

Enable
Enable Voltage Range

V

EN

GND - 0.3V

V

DD

+ 0.3

V

Logic ‘1’ High Enable Voltage

V

EH

2.0

1.6

V

Logic ‘0’ Low Enable Voltage

V

EL

1.3

0.8

V

Enable Voltage Hysteresis

V

HYST(EN)

0.3

V

Enable Input Current

I

EN

12

µA

V

DD

= 18V, ENB = A

GND

Propagation Delay

t

D3

19

26

ns

V

DD

= 18V,  V

EN

= 5V,  T

A

= +125°C, 

see 

Figure 4-3

Propagation Delay

t

D4

24

31

ns

V

DD

= 18V,  V

EN

= 5V,  T

A

= +125°C, 

see 

Figure 4-3

Output
High Output Voltage

V

OH

V

DD

- 0.025

V

DC  Test

Low Output Voltage

V

OL

0.025

V

DC Test

Output Resistance, High

R

OH

3.5

I

OUT

= 10 mA,  V

DD

= 18V

Output Resistance, Low

R

OL

3

I

OUT

= 10 mA,  V

DD

= 18V

Note 1:

Tested during characterization, not production tested.

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MCP14A0451/2

DS20005673A-page 6

 2016 Microchip Technology Inc.

Switching Time (

Note 1

)

Rise Time

t

R

11.5

16.5

ns

V

DD

= 18V,  C

L

= 2200 pF, 

T

A

= +125°C, see 

Figure 4-1

Figure 4-2

Fall Time

t

F

11.5

16.5

ns

V

DD

= 18V,  C

L

= 2200 pF, 

T

A

= +125°C, see 

Figure 4-1

Figure 4-2

Delay Time

t

D1

20

27

ns

V

DD

= 18V,  V

IN

= 5V,  T

A

= +125°C, 

see 

Figure 4-1

Figure 4-2

t

D2

24.5

31.5

V

DD

= 18V,  V

IN

= 5V,  T

A

= +125°C, 

see 

Figure 4-1

Figure 4-2

Power Supply
Supply Voltage

V

DD

4.5

18

V

Power Supply Current

I

DD

700

uA

V

IN

= 3V,  V

EN

 = 3V

I

DD

700

uA

V

IN

= 0V,  V

EN

 = 3V

I

DD

700

uA

V

IN

= 3V,  V

EN

 = 0V

I

DD

700

uA

V

IN

= 0V,  V

EN

 = 0V

1.2

Temperature Characteristics

Electrical Specifications: 

Unless otherwise noted, all parameters apply with 4.5V

 V

DD

 18V

Parameter

Sym.

Min.

Typ.

Max.

Units

Comments

Temperature Ranges
Specified Temperature Range

T

A

-40

+125

°C

Maximum Junction Temperature

T

J

+150

°C

Storage Temperature Range

T

A

-65

+150

°C

Package Thermal Resistances
Junction-to-Ambient Thermal Resistance, 8LD MSOP

JA

172

°C/W

Note 1

Junction-to-Ambient Thermal Resistance, 8LD SOIC

JA

111

°C/W

Note 1

Junction-to-Ambient Thermal Resistance, 8LD WDFN

JA

61

°C/W

Note 1

Junction-to-Top Characterization Parameter, 8LD MSOP

JT

7

°C/W

Note 1

Junction-to-Top Characterization Parameter, 8LD SOIC

JT

12

°C/W

Note 1

Junction-to-Top Characterization Parameter, 8LD WDFN

JT

1.6

°C/W

Note 1

Junction-to-Board Characterization Parameter, 8LD MSOP

JB

130

°C/W

Note 1

Junction-to-Board Characterization Parameter, 8LD SOIC

JB

76

°C/W

Note 1

Junction-to-Board Characterization Parameter, 8LD WDFN

JB

29

°C/W

Note 1

Note 1:

Parameter is determined using High K 2S2P 4-Layer board as described in JESD 51-7, as well as JESD 
51-5 for packages with exposed pads

TABLE 1-2:

DC CHARACTERISTICS (OVER OPERATING TEMP. RANGE)  (CONTINUED)

Electrical Specifications:

 Unless otherwise indicated, over the operating range with 4.5V

 V

DD

 18V.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Note 1:

Tested during characterization, not production tested.

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 2016 Microchip Technology Inc.

DS20005673A-page 7

MCP14A0451/2

2.0

TYPICAL PERFORMANCE CURVES

Note:

 Unless otherwise indicated, T

A

= +25°C  with  4.5V

 V

DD

 18V.

FIGURE 2-1:

Rise Time vs. Supply 

Voltage.

FIGURE 2-2:

Rise Time vs. Capacitive 

Load.

FIGURE 2-3:

Fall Time vs. Supply 

Voltage.

FIGURE 2-4:

Fall Time vs. Capacitive 

Load.

FIGURE 2-5:

Rise and Fall Time vs. 

Temperature.

FIGURE 2-6:

Crossover Current vs. 

Supply Voltage.

Note:

The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

0

10

20

30

40

50

60

70

80

90

100

110

120

4

6

8

10

12

14

16

18

Rise T

ime (ns)

Supply Voltage (V)

10000 pF

6800 pF
4700 pF
3300 pF
2200 pF
1000 pF

0

10

20

30

40

50

60

70

80

90

100

110

120

1000

10000

Rise T

ime (ns)

Capacitive Load (pF)

18V

12V

5V

0

10

20

30

40

50

60

70

80

4

6

8

10

12

14

16

18

Fall T

ime (ns)

Supply Voltage (V)

10000 pF

6800 pF
4700 pF
3300 pF
2200 pF
1000 pF

0

10

20

30

40

50

60

70

80

1000

10000

F

a

ll T

ime (n

s)

Capacitive Load (pF)

18V

12V

5V

4

6

8

10

12

14

16

18

20

22

24

26

-40 -25 -10

5

20

35

50

65

80

95 110 125

T

ime (n

s)

Temperature (°C)

V

DD

= 18V

t

F

, 4700 pF

t

R

, 4700 pF

t

R

, 2200 pF

t

F

, 2200 pF

10

100

1000

10000

4

6

8

10

12

14

16

18

Crossover Current (μA)

Supply Voltage (V)

1 MHz

500 kHz
200 kHz
100 kHz

50 kHz

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MCP14A0451/2

DS20005673A-page 8

 2016 Microchip Technology Inc.

Note:

 Unless otherwise indicated, T

A

= +25°C with 4.5V

 V

DD

 18V.

FIGURE 2-7:

Input Propagation Delay vs. 

Supply Voltage.

FIGURE 2-8:

Input Propagation Delay 

Time vs. Input Amplitude.

FIGURE 2-9:

Input Propagation Delay vs. 

Temperature.

FIGURE 2-10:

Enable Propagation Delay 

vs. Supply Voltage.

FIGURE 2-11:

Enable Propagation Delay 

Time vs. Enable Voltage Amplitude.

FIGURE 2-12:

Enable Propagation Delay 

vs. Temperature.

15

20

25

30

35

40

45

50

55

4

6

8

10

12

14

16

18

Input 

Propagation Del

ay

 (ns)

Supply Voltage (V)

V

IN

= 5V

t

D1

t

D2

10

15

20

25

2

4

6

8

10

12

14

16

18

In

put Propogati

on Delay

 (ns)

Input Voltage Amplitude (V)

t

D2

t

D1

V

DD

= 18V

12

14

16

18

20

22

24

26

-40 -25 -10

5

20

35

50

65

80

95 110 125

Input Propagation 

Del

ay

 (ns)

Temperature (°C)

V

DD

= 18V

V

IN

= 5V

t

D2

t

D1

15

20

25

30

35

40

45

50

55

4

6

8

10

12

14

16

18

Enable 

Propaga

tion Delay

 (n

s)

Supply Voltage (V)

V

EN

= 5V

t

D3

t

D4

10

15

20

25

2

4

6

8

10

12

14

16

18

Enable Propagation Delay

 (ns)

Enable Voltage Amplitude (V)

t

D4

t

D3

V

DD

= 18V

12

14

16

18

20

22

24

26

-40 -25 -10

5

20

35

50

65

80

95 110 125

Enable Propagation Delay

 (ns)

Temperature (°C)

t

D4

t

D3

V

DD

= 18V

V

EN

= 5V

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DS20005673A-page 9

MCP14A0451/2

Note:

 Unless otherwise indicated, T

A

= +25°C  with  4.5V

 V

DD

 18V.

FIGURE 2-13:

Quiescent Supply Current 

vs. Supply Voltage.

FIGURE 2-14:

Quiescent Supply Current 

vs. Temperature.

FIGURE 2-15:

Input Threshold vs. 

Temperature.

FIGURE 2-16:

Input Threshold vs Supply 

Voltage.

FIGURE 2-17:

Enable Threshold vs. 

Temperature.

FIGURE 2-18:

Enable Threshold vs Supply 

Voltage.

250

300

350

400

4

6

8

10

12

14

16

18

Quiescent Current

 (μA)

Supply Voltage (V)

250

300

350

400

450

500

-40 -25 -10

5

20

35

50

65

80

95 110 125

Qu

ie

sc

e

n

t C

u

rr

ent (μ

A)

Temperature (°C)

V

DD

= 18V

1.00

1.10

1.20

1.30

1.40

1.50

1.60

1.70

1.80

-40 -25 -10

5

20 35 50 65 80 95 110 125

Input Threshold 

(V)

Temperature (°C)

V

DD

= 18V

V

IL

V

IH

1

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

4

6

8

10

12

14

16

18

Input Threshold 

(V)

Supply Voltage (V)

V

IL

V

IH

1

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

-40 -25 -10

5

20

35

50

65

80

95 110 125

Enable Threshold (V)

Temperature (°C)

V

DD

= 18V

V

EL

V

EH

1

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

4

6

8

10

12

14

16

18

Enable Threshold (V)

Supply Voltage (V)

V

EL

V

EH

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background image

MCP14A0451/2

DS20005673A-page 10

 2016 Microchip Technology Inc.

Note:

 Unless otherwise indicated, T

A

= +25°C with 4.5V

 V

DD

 18V.

FIGURE 2-19:

Output Resistance (Output 

High) vs. Supply Voltage.

FIGURE 2-20:

Output Resistance (Output 

Low) vs. Supply Voltage.

FIGURE 2-21:

Supply Current vs. 

Capacitive Load (V

DD

 = 18V).

FIGURE 2-22:

Supply Current vs. 

Capacitive Load (V

DD

 = 12V).

FIGURE 2-23:

Supply Current vs. 

Capacitive Load (V

DD

 = 6V).

FIGURE 2-24:

Supply Current vs. 

Frequency (V

DD

 = 18V).

1

1.5

2

2.5

3

3.5

4

4.5

5

4

6

8

10

12

14

16

18

R

OH

-

O

utp

ut Resistan

ce 

)

Supply Voltage (V)

T

A

= +25°C 

T

A

= +125°C 

V

IN

= 0V (MCP14A0451)

V

IN

= 5V (MCP14A0452)

1

1.5

2

2.5

3

4

6

8

10

12

14

16

18

R

OL

-

O

u

tpu

t Resistance 

)

Supply Voltage (V)

T

A

= +25°C 

T

A

= +125°C 

V

IN

= 5V (MCP14A0451)

V

IN

= 0V (MCP14A0452)

0

10

20

30

40

50

60

70

80

90

100

100

1000

10000

Suppl

y

 Current 

(mA)

Capacitive Load (pF)

1 MHz

500 kHz
200 kHz
100 kHz

50 kHz
10 kHz

V

DD

= 18V

0

5

10

15

20

25

30

35

40

45

50

100

1000

10000

Supply

 Current 

(mA)

Capacitive Load (pF)

1 MHz

500 kHz
200 kHz
100 kHz

50 kHz
10 kHz

V

DD

= 12V

0

5

10

15

20

25

30

100

1000

10000

Suppl

y

 Current 

(mA)

Capacitive Load (pF)

1 MHz

500 kHz
200 kHz
100 kHz

50 kHz
10 kHz

V

DD

= 6V

0

10

20

30

40

50

60

70

80

90

100

10

100

1000

Supply

 Current 

(mA)

Switching Frequency (kHz)

10000 pF

6800 pF
3300 pF
1000 pF

470 pF
100 pF

V

DD

= 18V

Maker
Microchip Technology Inc.
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