2015-2017 Microchip Technology Inc.
DS20005470B-page 1
MCP14A0153/4/5
Features
• High Peak Output Current: 1.5A (typical)
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• High Capacitive Load Drive Capability:
- 1000 pF in 11.5 ns (typical)
• Short Delay Times: 25 ns (t
D1
), 24 ns (t
D2
) (typical)
• Low Supply Current: 750 µA (typical)
• Low-Voltage Threshold Input and Enable with
Hysteresis
• Latch-up Protected: Withstands 500 mA Reverse
Current
• Space-Saving Packages:
- 8-Lead MSOP
- 8-Lead SOIC
- 8-Lead 2x3 TDFN
Applications
• Switch-Mode Power Supplies (SMPS)
• Pulse Transformer Drive
• Line Drivers
• Level Translator
• Motor and Solenoid Drive
General Description
The MCP14A0153/4/5 devices are high-speed dual
MOSFET drivers that are capable of providing up to
1.5A of peak current while operating from a single 4.5V
to 18V supply. There are three output configurations
available: dual inverting (MCP14A0153), dual
non-inverting (MCP14A0154) and complementary
(MCP14A0155). These devices feature low
shoot-through current, matched rise and fall times and
short propagation delays, which make them ideal for
high switching frequency applications.
The MCP14A0153/4/5 family of devices offers
enhanced control with enable functionality. The
active-high enable pins can be driven low to drive the
corresponding outputs of the MCP14A0153/4/5 low,
regardless of the status of the input pin. An integrated
pull-up resistor allows the user to leave the enable pins
floating for standard operation.
These devices are highly latch-up resistant under any
condition within their power and voltage ratings. They
can accept up to 500 mA of reverse current being
forced back into their outputs without damage or logic
upset. All terminals are fully protected against
Electrostatic Discharge (ESD), up to 2 kV (HBM) and
200 V (MM).
Package Types
GND
IN A
IN B
1
2
3
4
8
7
6
5
EN A
EN B
OUT A
V
DD
OUT B
MSOP/SOIC
2×3 TDFN*
GND
IN A
IN B
OUT A
V
DD
1
2
3
4
8
7
6
5 OUT B
EN B
EN A
EP
9
* Includes Exposed Thermal Pad (EP); see
Table 3-1
.
MCP14A0153
MCP14A0154
MCP14A0155
MCP14A0153
MCP14A0154
MCP14A0155
OUT A
OUT B
OUT A
OUT B
OUT A
OUT B
OUT A
OUT B
1.5A Dual MOSFET Driver
with Low Threshold Input and Enable
MCP14A0153/4/5
DS20005470B-page 2
2015-2017 Microchip Technology Inc.
Functional Block Diagram
MCP14A0153
Dual Inverting
MCP14A0154
Dual Non-Inverting
MCP14A0155
One Inverting, One Non-Inverting
Non-Inverting
Enable
Input
V
DD
Output
Inverting
V
REF
V
REF
V
DD
GND
Internal
Pull-up
GND
2015-2017 Microchip Technology Inc.
DS20005470B-page 3
MCP14A0153/4/5
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
V
DD
, Supply Voltage.............................................+20V
V
IN
, Input Voltage.......... (V
DD
+ 0.3V) to (GND – 0.3V)
V
EN
, Enable Voltage...... (V
DD
+ 0.3V) to (GND – 0.3V)
Package Power Dissipation (T
A
= +50°C)
8L MSOP ...................................................... 0.63W
8L SOIC ........................................................ 1.00W
8L 2 x 3 TDFN............................................... 1.86W
ESD Protection on all Pins .........................2 kV (HBM)
ESD Protection on all Pins
..........................200V (MM)
† Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this specifica-
tion is not intended. Exposure to maximum rating
conditions for extended periods may affect device
reliability.
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, T
A
= +25°C, with 4.5V
V
DD
18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Input
Input Voltage Range
V
IN
GND – 0.3
—
V
DD
+ 0.3
V
Logic ‘1’ High Input Voltage
V
IH
2.0
1.6
—
V
Logic ‘0’ Low Input Voltage
V
IL
—
1.2
0.8
V
Input Voltage Hysteresis
V
HYST(IN)
—
0.4
—
V
Input Current
I
IN
-1
—
+1
µA
0V
V
IN
V
DD
Enable
Enable Voltage Range
V
EN
GND – 0.3V
—
V
DD
+ 0.3
V
Logic ‘1’ High Enable Voltage
V
EH
2
1.6
—
V
Logic ‘0’ Low Enable Voltage
V
EL
—
1.2
0.8
V
Enable Voltage Hysteresis
V
HYST(EN)
—
0.4
—
V
Enable Pin Pull-up Resistance
R
ENBL
—
1.8
—
MΩ
V
DD
= 18V, EN = GND
Enable Input Current
I
EN
—
10
—
µA
V
DD
= 18V, EN = GND
Propagation Delay
t
D3
—
25
32
ns
V
DD
= 18V, V
EN
= 5V,
see
Figure 4-3
(
Note 1
)
Propagation Delay
t
D4
—
24
31
ns
V
DD
= 18V, V
EN
= 5V,
see
Figure 4-3
(
Note 1
)
Output
High Output Voltage
V
OH
V
DD
– 0.025
—
—
V
I
OUT
= 0A
Low Output Voltage
V
OL
—
—
0.025
V
I
OUT
= 0A
Output Resistance, High
R
OH
—
4.5
6.5
Ω
I
OUT
= 10 mA, V
DD
= 18V
Output Resistance, Low
R
OL
—
3.0
4.5
Ω
I
OUT
= 10 mA, V
DD
= 18V
Peak Output Current
I
PK
—
1.5
—
A
V
DD
= 18V (
Note 1
)
Latch-up Protection Withstand
Reverse Current
I
REV
0.5
—
—
A
Duty cycle
2%, t 300 µs
(
Note 1
)
Note 1:
Tested during characterization, not production tested.
MCP14A0153/4/5
DS20005470B-page 4
2015-2017 Microchip Technology Inc.
Switching Time
(
1
)
Rise Time
t
R
—
11.5
18.5
ns
V
DD
= 18V, C
L
= 1000 pF,
see
Figure 4-1
and
Figure 4-2
(
Note 1
)
Fall Time
t
F
—
10
17
ns
V
DD
= 18V, C
L
= 1000 pF,
see
Figure 4-1
and
Figure 4-2
(
Note 1
)
Delay Time
t
D1
—
25
32
ns
V
DD
= 18V, V
IN
= 5V,
see
Figure 4-1
and
Figure 4-2
(
Note 1
)
t
D2
—
24
31
ns
V
DD
= 18V, V
IN
= 5V,
see
Figure 4-1
and
Figure 4-2
(
Note 1
)
Power Supply
Supply Voltage
V
DD
4.5
—
18
V
Power Supply Current
I
DD
—
675
1120
µA
V
INA/B
= 3V, V
ENA/B
= 3V
I
DD
—
715
1160
µA
V
INA/B
= 0V, V
ENA/B
= 3V
I
DD
—
715
1160
µA
V
INA/B
= 3V, V
ENA/B
= 0V
I
DD
—
750
1200
µA
V
INA/B
= 0V, V
ENA/B
= 0V
DC CHARACTERISTICS
(OVER OPERATING TEMPERATURE RANGE)
(
1
)
Electrical Specifications:
Unless otherwise indicated, over the operating range with 4.5V
V
DD
18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Input
Input Voltage Range
V
IN
GND – 0.3V
—
V
DD
+ 0.3
V
Logic ‘1’ High Input Voltage
V
IH
2.0
1.6
—
V
Logic ‘0’ Low Input Voltage
V
IL
—
1.2
1.8
V
Input Voltage Hysteresis
V
HYST(IN)
—
0.4
—
V
Input Current
I
IN
-10
—
+10
µA
0V
V
IN
V
DD
Enable
Enable Voltage Range
V
EN
GND – 0.3V
—
V
DD
+ 0.3
V
Logic ‘1’ High Enable Voltage
V
EH
2.0
1.6
—
V
Logic ‘0’ Low Enable Voltage
V
EL
—
1.2
1.8
V
Enable Voltage Hysteresis
V
HYST(EN)
—
0.4
—
V
Enable Input Current
I
EN
—
12
—
µA
V
DD
= 18V, EN = GND
Propagation Delay
t
D3
—
28
35
ns
V
DD
= 18V, V
EN
= 5V, T
A
= +125°C,
see
Figure 4-3
Propagation Delay
t
D4
—
27
34
ns
V
DD
= 18V, V
EN
= 5V, T
A
= +125°C,
see
Figure 4-3
Note 1:
Tested during characterization, not production tested.
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise noted, T
A
= +25°C, with 4.5V
V
DD
18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Note 1:
Tested during characterization, not production tested.
2015-2017 Microchip Technology Inc.
DS20005470B-page 5
MCP14A0153/4/5
Output
High Output Voltage
V
OH
V
DD
– 0.025
—
—
V
DC Test
Low Output Voltage
V
OL
—
—
0.025
V
DC Test
Output Resistance, High
R
OH
—
—
9
Ω
I
OUT
= 10 mA, V
DD
= 18V
Output Resistance, Low
R
OL
—
—
6.5
Ω
I
OUT
= 10 mA, V
DD
= 18V
Switching Time (
Note 1
)
Rise Time
t
R
—
14
21
ns
V
DD
= 18V, C
L
= 1000 pF,
T
A
= +125°C, see
Figure 4-1
and
Figure 4-2
Fall Time
t
F
—
13
20
ns
V
DD
= 18V, C
L
= 1000 pF,
T
A
= +125°C, see
Figure 4-1
and
Figure 4-2
Delay Time
t
D1
—
28
35
ns
V
DD
= 18V, V
IN
= 5V, T
A
= +125°C,
see
Figure 4-1
and
Figure 4-2
t
D2
—
27
34
ns
V
DD
= 18V, V
IN
= 5V, T
A
= +125°C,
see
Figure 4-1
and
Figure 4-2
Power Supply
Supply Voltage
V
DD
4.5
—
18
V
Power Supply Current
I
DD
—
—
1520
µA
V
IN
= 3V, V
EN
= 3V
I
DD
—
—
1560
µA
V
IN
= 0V, V
EN
= 3V
I
DD
—
—
1560
µA
V
IN
= 3V, V
EN
= 0V
I
DD
—
—
1600
µA
V
IN
= 0V, V
EN
= 0V
DC CHARACTERISTICS
(OVER OPERATING TEMPERATURE RANGE)
(
1
)
(CONTINUED)
Electrical Specifications:
Unless otherwise indicated, over the operating range with 4.5V
V
DD
18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Note 1:
Tested during characterization, not production tested.
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, all parameters apply with 4.5V
V
DD
18V.
Parameter
Sym.
Min.
Typ.
Max. Units
Comments
Temperature Ranges
Specified Temperature Range
T
A
-40
—
+125
°C
Maximum Junction Temperature
T
J
—
—
+150
°C
Storage Temperature Range
T
A
-65
—
+150
°C
Package Thermal Information
Junction-to-Ambient Thermal Resistance, 8LD MSOP
JA
—
158
—
°C/W (
Note 1
)
Junction-to-Ambient Thermal Resistance, 8LD SOIC
JA
—
99.8
—
°C/W (
Note 1
)
Junction-to-Ambient Thermal Resistance, 8LD TDFN
JA
—
53.7
—
°C/W (
Note 1
)
Junction-to-Top Characterization Parameter, 8LD MSOP
JT
—
2.4
—
°C/W (
Note 1
)
Junction-to-Top Characterization Parameter, 8LD SOIC
JT
—
5.9
—
°C/W (
Note 1
)
Junction-to-Top Characterization Parameter, 8LD TDFN
JT
—
0.5
—
°C/W (
Note 1
)
Junction-to-Board Characterization Parameter, 8LD MSOP
JB
—
115.2
—
°C/W (
Note 1
)
Junction-to-Board Characterization Parameter, 8LD SOIC
JB
—
64.8
—
°C/W (
Note 1
)
Junction-to-Board Characterization Parameter, 8L TDFN
JB
—
24.4
—
°C/W (
Note 1
)
Note 1:
Parameter is determined using a High K 2S2P 4-layer board, as described in JESD 51-7, as well as
JESD 51-5 for packages with exposed pads.
MCP14A0153/4/5
DS20005470B-page 6
2015-2017 Microchip Technology Inc.
2.0
TYPICAL PERFORMANCE CURVES
Note:
Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
18V.
FIGURE 2-1:
Rise Time vs. Supply
Voltage.
FIGURE 2-2:
Rise Time vs. Capacitive
Load.
FIGURE 2-3:
Fall Time vs. Supply
Voltage.
FIGURE 2-4:
Fall Time vs. Capacitive
Load.
FIGURE 2-5:
Rise and Fall Time vs.
Temperature.
FIGURE 2-6:
Crossover Current vs.
Supply Voltage.
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0
20
40
60
80
100
120
140
160
180
200
4
6
8
10
12
14
16
18
Rise T
ime (ns)
Supply Voltage (V)
470 pF
1000 pF
3300 pF
6800 pF
10000 pF
0
20
40
60
80
100
120
140
160
180
200
100
1000
10000
Rise T
ime (ns)
Capacitive Load (pF)
18V
12V
5V
0
20
40
60
80
100
120
140
160
4
6
8
10
12
14
16
18
Fall T
ime (ns)
Supply Voltage (V)
470 pF
1000 pF
3300 pF
6800 pF
10000 pF
0
20
40
60
80
100
120
140
160
100
1000
10000
Fall T
ime (ns)
Capacitive Load (pF)
18V
12V
5V
4
6
8
10
12
14
16
-40 -25 -10
5
20
35
50
65
80
95 110 125
T
ime (ns)
Temperature (°C)
V
DD
= 18V
t
F
, 1000 pF
t
R
, 1000 pF
t
R
, 470 pF
t
F
, 470 pF
1
10
100
1000
10000
4
6
8
10
12
14
16
18
Crossover Current
(µA)
Supply Voltage (V)
500 kHz
200 kHz
100 kHz
50k Hz
2015-2017 Microchip Technology Inc.
DS20005470B-page 7
MCP14A0153/4/5
Note:
Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
18V.
FIGURE 2-7:
Input Propagation Delay vs.
Supply Voltage.
FIGURE 2-8:
Input Propagation Delay
Time vs. Input Amplitude.
FIGURE 2-9:
Input Propagation Delay vs.
Temperature.
FIGURE 2-10:
Enable Propagation Delay
vs. Supply Voltage.
FIGURE 2-11:
Enable Propagation Delay
Time vs. Enable Voltage Amplitude.
FIGURE 2-12:
Enable Propagation Delay
vs. Temperature.
20
25
30
35
40
45
4
6
8
10
12
14
16
18
Input Propagation Delay (ns)
Supply Voltage (V)
V
IN
= 5V
t
D1
t
D2
20
25
30
35
40
45
50
2
4
6
8
10
12
14
16
18
Input Propogation
Del
ay
(ns)
Input Voltage Amplitude (V)
t
D2
t
D1
V
DD
= 18V
20
25
30
-40 -25 -10
5
20
35
50
65
80
95 110 125
Input Propagation Delay (ns)
Temperature (°C)
V
DD
= 18V
V
IN
= 5V
t
D2
t
D1
20
25
30
35
40
45
4
6
8
10
12
14
16
18
Enable Propagation Delay (ns)
Supply Voltage (V)
V
EN
= 5V
t
D3
t
D4
20
25
30
35
40
45
50
2
4
6
8
10
12
14
16
18
Enable Propagation Delay (ns)
Enable Voltage Amplitude (V)
t
D4
t
D3
V
DD
= 18V
20
25
30
-40 -25 -10
5
20
35
50
65
80
95 110 125
Enable Propagation Delay (ns)
Temperature (°C)
t
D4
t
D3
V
DD
= 18V
V
EN
= 5V
MCP14A0153/4/5
DS20005470B-page 8
2015-2017 Microchip Technology Inc.
Note:
Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
18V.
FIGURE 2-13:
Quiescent Supply Current
vs. Supply Voltage.
FIGURE 2-14:
Quiescent Supply Current
vs. Temperature.
FIGURE 2-15:
Input Threshold vs.
Temperature.
FIGURE 2-16:
Input Threshold vs. Supply
Voltage.
FIGURE 2-17:
Enable Threshold vs.
Temperature.
FIGURE 2-18:
Enable Threshold vs.
Supply Voltage.
640
660
680
700
720
740
760
4
6
8
10
12
14
16
18
Quiescent Current
(µA)
Supply Voltage (V)
V
IN
= 3V,V
EN
= 3V
V
IN
= 0V,V
EN
= 0V
V
IN
= 3V,V
EN
= 0V or V
IN
= 0V,V
EN
= 3V
600
650
700
750
800
850
900
950
1000
-40 -25 -10
5
20 35 50 65 80 95 110 125
Quiescent Current
(µA)
Temperature (°C)
V
DD
= 18V
V
IN
= 5V,V
EN
= 5V
V
IN
= 0V,V
EN
= 0V
V
IN
= 5V,V
EN
= 0V or V
IN
= 0V,V
EN
= 5V
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
-40 -25 -10
5
20
35
50
65
80
95 110 125
Input Threshold (V)
Temperature (°C)
V
DD
= 18V
V
IL
V
IH
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
4
6
8
10
12
14
16
18
Input Threshold (V)
Supply Voltage (V)
V
IL
V
IH
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
-40 -25 -10
5
20
35
50
65
80
95 110 125
Enable Threshold (V)
Temperature (°C)
V
DD
= 18V
V
EL
V
EH
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
4
6
8
10
12
14
16
18
Enable Threshold (V)
Supply Voltage (V)
V
EL
V
EH
2015-2017 Microchip Technology Inc.
DS20005470B-page 9
MCP14A0153/4/5
Note:
Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
18V.
FIGURE 2-19:
Output Resistance (Output
High) vs. Supply Voltage.
FIGURE 2-20:
Output Resistance (Output
Low) vs. Supply Voltage.
FIGURE 2-21:
Supply Current vs.
Capacitive Load (V
DD
= 18V).
FIGURE 2-22:
Supply Current vs.
Capacitive Load (V
DD
= 12V).
FIGURE 2-23:
Supply Current vs.
Capacitive Load (V
DD
= 6V).
FIGURE 2-24:
Supply Current vs.
Frequency (V
DD
= 18V).
4
5
6
7
8
9
10
11
12
13
14
4
6
8
10
12
14
16
18
R
OH
-
Output Resistance (
)
Supply Voltage (V)
T
A
= +25°C
T
A
= +125°C
V
IN
= 0V (MCP14A0154)
V
IN
= 5V (MCP14A0154)
0
2
4
6
8
10
4
6
8
10
12
14
16
18
R
OL
-
Output Resistance (
)
Supply Voltage (V)
T
A
= +25°C
T
A
= +125°C
V
IN
= 5V (MCP14A0153)
V
IN
= 0V (MCP14A0154)
0
10
20
30
40
50
60
70
80
90
100
100
1000
10000
Supply Current (mA)
Capacitive Load (pF)
1 MHz
500 kHz
200 kHz
100 kHz
50 kHz
10 kHz
V
DD
= 18V
0
5
10
15
20
25
30
35
40
45
50
100
1000
10000
Supply Current (mA)
Capacitive Load (pF)
1 MHz
500 kHz
200 kHz
100 kHz
50 kHz
10 kHz
V
DD
= 12V
0
5
10
15
20
25
30
100
1000
10000
Supply Current (mA)
Capacitive Load (pF)
1 MHz
500kHz
200kHz
100kHz
50kHz
10kHz
V
DD
= 6V
0
10
20
30
40
50
60
70
80
90
100
10
100
1000
Supply Current (mA)
Switching Frequency (kHz)
10000 pF
6800 pF
3300 pF
1000 pF
470 pF
100 pF
V
DD
= 18V
MCP14A0153/4/5
DS20005470B-page 10
2015-2017 Microchip Technology Inc.
Note:
Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
18V.
FIGURE 2-25:
Supply Current vs.
Frequency (V
DD
= 12V).
FIGURE 2-26:
Supply Current vs.
Frequency (V
DD
= 6V).
FIGURE 2-27:
Enable Current vs. Supply
Voltage.
0
5
10
15
20
25
30
35
40
45
50
10
100
1000
Supply Current (mA)
Switching Frequency (kHz)
10000 pF
6800 pF
3300 pF
1000 pF
470 pF
100 pF
V
DD
= 12V
0
5
10
15
20
25
30
10
100
1000
Supply Current (mA)
Switching Frequency (kHz)
10000 pF
6800 pF
3300 pF
1000 pF
470 pF
100 pF
V
DD
= 6V
8
9
10
11
12
13
14
4
6
8
10
12
14
16
18
Enable Current (µA)
Supply Voltage (V)
T
A
= +25°C
T
A
= +125°C