2014 Microchip Technology Inc.
DS20005369A-page 1
MCP14A0051/2
Features
• High Peak Output Current: 0.5A (typical)
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• High Capacitive Load Drive Capability:
- 1000 pF in 40 ns (typical)
• Short Delay Times: 33 ns (t
D1
), 24 ns (t
D2
) (typical)
• Low Supply Current: 375 µA (typical)
• Low Voltage Threshold Input and Enable with
Hysteresis
• Latch-Up Protected: Withstands 500 mA Reverse
Current
• Space-Saving Packages:
- 6L SOT-23
- 6L 2 x 2 DFN
Applications
• Switch Mode Power Supplies
• Pulse Transformer Drive
• Line Drivers
• Level Translator
• Motor and Solenoid Drive
General Description
The MCP14A0051/2 devices are high-speed MOSFET
drivers that are capable of providing up to 0.5A of peak
current while operating from a single 4.5V to 18V
supply. The inverting (MCP14A0051) or non-inverting
(MCP14A0052) single-channel output is directly
controlled from either TTL or CMOS (2V to 18V) logic.
These devices also feature low shoot-through current,
matched rise and fall times, and short propagation
delays which make them ideal for high switching
frequency applications.
The MCP14A0051/2 family of devices offer enhanced
control with Enable functionality. The active-high
Enable pin can be driven low to drive the output of the
MCP14A0051/2 low regardless of the status of the
Input pin. An integrated pull-up resistor allows the user
to leave the Enable pin floating for standard operation.
Additionally, the MCP14A0051/2 devices feature sepa-
rate ground pins (A
GND
and GND), allowing greater
noise isolation between the level-sensitive Input/
Enable pins and the fast, high-current transitions of the
push-pull output stage.
These devices are highly latch-up resistant under any
condition within their power and voltage ratings. They
can accept up to 500 mA of reverse current being
forced back into their outputs without damage or logic
upset. All terminals are fully protected against
electrostatic discharge (ESD) up to 1.75 kV (HBM) and
100V (MM).
Package Types
4
1
2
3
6
OUT
EN
V
DD
A
GND
IN
5
GND
6-Lead SOT-23
2x2 DFN-6*
GND
EN
IN
1
2
3
6
5
4
V
DD
EP
7
A
GND
OUT
OUT
MCP14A0051
MCP14A0052
OUT
MCP14A0052
MCP14A0051
* Includes Exposed Thermal Pad (EP); see
Table 3-1
.
0.5A MOSFET Driver
With Low Threshold Input And Enable
MCP14A0051/2
DS20005369A-page 2
2014 Microchip Technology Inc.
Functional Block Diagram
Non-Inverting
Enable
Input
GND
V
DD
Output
Inverting
V
REF
V
REF
V
DD
AGND
AGND
Internal
Pull-Up
MCP14A0051 Inverting
MCP14A0052 Non-Inverting
2014 Microchip Technology Inc.
DS20005369A-page 3
MCP14A0051/2
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
DD
, Supply Voltage.............................................+20V
V
IN
, Input Voltage........... (V
DD
+ 0.3V) to (GND - 0.3V)
V
EN
, Enable Voltage....... (V
DD
+ 0.3V) to (GND - 0.3V)
Package Power Dissipation (T
A
= +50°C)
6L SOT-23.................................................... 0.52 W
6L 2 x 2 DFN................................................ 1.09 W
ESD Protection on all Pins ....................1.75 kV (HBM)
....................................................................100V (MM)
† Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, T
A
= +25°C, with 4.5V
V
DD
18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Input
Input Voltage Range
V
IN
GND - 0.3V
—
V
DD
+ 0.3
V
Logic ‘1’ High Input Voltage
V
IH
2.0
1.6
—
V
Logic ‘0’ Low Input Voltage
V
IL
—
1.2
0.8
V
Input Voltage Hysteresis
V
HYST(IN)
—
0.4
—
V
Input Current
I
IN
-1
—
+1
µA
0V
V
IN
V
DD
Enable
Enable Voltage Range
V
EN
GND - 0.3V
—
V
DD
+ 0.3
V
Logic ‘1’ High Enable Voltage
V
EH
2.0
1.6
—
V
Logic ‘0’ Low Enable Voltage
V
EL
—
1.2
0.8
V
Enable Voltage Hysteresis
V
HYST(EN)
—
0.4
—
V
Enable Pin Pull-Up Resistance
R
ENBL
—
1.8
—
MΩ
V
DD
= 18V, ENB = A
GND
Enable Input Current
I
EN
—
10
—
µA
V
DD
= 18V, ENB = A
GND
Propagation Delay
t
D3
—
35
43
ns
V
DD
= 18V, V
EN
= 5V, see
Figure 4-3
, (
Note 1
)
Propagation Delay
t
D4
—
23
31
ns
V
DD
= 18V, V
EN
= 5V, see
Figure 4-3
, (
Note 1
)
Output
High Output Voltage
V
OH
V
DD
- 0.025
—
—
V
I
OUT
= 0A
Low Output Voltage
V
OL
—
—
0.025
V
I
OUT
= 0A
Output Resistance, High
R
OH
—
12.5
17
Ω
I
OUT
= 10 mA, V
DD
= 18V
Output Resistance, Low
R
OL
—
7.5
10
Ω
I
OUT
= 10 mA, V
DD
= 18V
Peak Output Current
I
PK
—
0.5
—
A
V
DD
= 18V (
Note 1
)
Latch-Up Protection Withstand
Reverse Current
I
REV
0.5
—
—
A
Duty cycle
2%, t 300 µs
(
Note 1
)
Switching Time
(
Note 1
)
Rise Time
t
R
—
40
51
ns
V
DD
= 18V, C
L
= 1000 pF, see
Figure 4-1
,
Figure 4-2
(
Note 1
)
Fall Time
t
F
—
28
39
ns
V
DD
= 18V, C
L
= 1000 pF, see
Figure 4-1
,
Figure 4-2
(
Note 1
)
Note 1:
Tested during characterization, not production tested.
MCP14A0051/2
DS20005369A-page 4
2014 Microchip Technology Inc.
Delay Time
t
D1
—
33
41
ns
V
DD
= 18V, V
IN
= 5V, see
Figure 4-1
,
Figure 4-2
,
(
Note 1
)
Delay Time
t
D2
—
24
32
ns
V
DD
= 18V, V
IN
= 5V, see
Figure 4-1
,
Figure 4-2
,
(
Note 1
)
Power Supply
Supply Voltage
V
DD
4.5
—
18
V
Power Supply Current
I
DD
—
330
560
µA
V
IN
= 3V, V
EN
= 3V
I
DD
—
360
580
µA
V
IN
= 0V, V
EN
= 3V
I
DD
—
360
580
µA
V
IN
= 3V, V
EN
= 0V
I
DD
—
375
600
µA
V
IN
= 0V, V
EN
= 0V
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise noted, T
A
= +25°C, with 4.5V
V
DD
18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Note 1:
Tested during characterization, not production tested.
DC CHARACTERISTICS (OVER OPERATING TEMP. RANGE) (
Note 1
)
Electrical Specifications:
Unless otherwise indicated, over the operating range with 4.5V
V
DD
18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Input
Input Voltage Range
V
IN
GND - 0.3V
—
V
DD
+ 0.3
V
Logic ‘1’ High Input Voltage
V
IH
2.0
1.6
—
V
Logic ‘0’ Low Input Voltage
V
IL
—
1.2
0.8
V
Input Voltage Hysteresis
V
HYST(IN)
—
0.4
—
V
Input Current
I
IN
-10
—
+10
µA
0V
V
IN
V
DD
Enable
Enable Voltage Range
V
EN
GND - 0.3V
—
V
DD
+ 0.3
V
Logic ‘1’ High Enable Voltage
V
EH
2.0
1.6
—
V
Logic ‘0’ Low Enable Voltage
V
EL
—
1.2
0.8
V
Enable Voltage Hysteresis
V
HYST(EN)
—
0.4
—
V
Enable Input Current
I
EN
—
12
—
µA
V
DD
= 18V, ENB = A
GND
Propagation Delay
t
D3
—
33
41
ns
V
DD
= 18V, V
EN
= 5V, T
A
= +125°C,
see
Figure 4-3
Propagation Delay
t
D4
—
25
33
ns
V
DD
= 18V, V
EN
= 5V, T
A
= +125°C,
see
Figure 4-3
Output
High Output Voltage
V
OH
V
DD
- 0.025
—
—
V
DC Test
Low Output Voltage
V
OL
—
—
0.025
V
DC Test
Output Resistance, High
R
OH
—
—
24
I
OUT
= 10 mA, V
DD
= 18V
Output Resistance, Low
R
OL
—
—
15
I
OUT
= 10 mA, V
DD
= 18V
Note 1:
Tested during characterization, not production tested.
2014 Microchip Technology Inc.
DS20005369A-page 5
MCP14A0051/2
Switching Time (
Note 1
)
Rise Time
t
R
—
45
56
ns
V
DD
= 18V, C
L
= 1000 pF,
T
A
= +125°C, see
Figure 4-1
,
Figure 4-2
Fall Time
t
F
—
34
45
ns
V
DD
= 18V, C
L
= 1000 pF,
T
A
= +125°C, see
Figure 4-1
,
Figure 4-2
Delay Time
t
D1
—
32
40
ns
V
DD
= 18V, V
IN
= 5V, T
A
= +125°C,
see
Figure 4-1
,
Figure 4-2
Delay Time
t
D2
—
27
35
V
DD
= 18V, V
IN
= 5V, T
A
= +125°C,
see
Figure 4-1
,
Figure 4-2
Power Supply
Supply Voltage
V
DD
4.5
—
18
V
Power Supply Current
I
DD
—
—
760
uA
V
IN
= 3V, V
EN
= 3V
I
DD
—
—
780
uA
V
IN
= 0V, V
EN
= 3V
I
DD
—
—
780
uA
V
IN
= 3V, V
EN
= 0V
I
DD
—
—
800
uA
V
IN
= 0V, V
EN
= 0V
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, all parameters apply with 4.5V
V
DD
18V
Parameter
Sym.
Min.
Typ.
Max.
Units
Comments
Temperature Ranges
Specified Temperature Range
T
A
-40
—
+125
°C
Maximum Junction Temperature
T
J
—
—
+150
°C
Storage Temperature Range
T
A
-65
—
+150
°C
Package Thermal Resistances
Thermal Resistance, 6LD 2x2 DFN
JA
—
91
—
°C/W
Thermal Resistance, 6LD SOT-23
JA
—
192
—
°C/W
DC CHARACTERISTICS (OVER OPERATING TEMP. RANGE) (
Note 1
) (CONTINUED)
Electrical Specifications:
Unless otherwise indicated, over the operating range with 4.5V
V
DD
18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Note 1:
Tested during characterization, not production tested.
MCP14A0051/2
DS20005369A-page 6
2014 Microchip Technology Inc.
2.0
TYPICAL PERFORMANCE CURVES
Note:
Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
18V.
FIGURE 2-1:
Rise Time vs. Supply
Voltage.
FIGURE 2-2:
Rise Time vs. Capacitive
Load.
FIGURE 2-3:
Fall Time vs. Supply
Voltage.
FIGURE 2-4:
Fall Time vs. Capacitive
Load.
FIGURE 2-5:
Rise and Fall Time vs.
Temperature.
FIGURE 2-6:
Crossover Current vs.
Supply Voltage.
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0
50
100
150
200
250
300
4
6
8
10
12
14
16
18
Rise T
ime (ns)
Supply Voltage (V)
470 pF
1000 pF
3300 pF
6800 pF
100 pF
0
20
40
60
80
100
120
140
160
180
200
100
1000
10000
Rise T
ime (ns)
Capacitive Load (pF)
18V
12V
5V
0
50
100
150
200
250
4
6
8
10
12
14
16
18
Fall T
ime (ns)
Supply Voltage (V)
470 pF
1000 pF
3300 pF
6800 pF
100 pF
0
20
40
60
80
100
120
140
160
100
1000
10000
Fall T
ime (ns)
Capacitive Load (pF)
18V
12V
5V
5
10
15
20
25
30
35
40
45
50
55
-40 -25 -10
5
20
35
50
65
80
95 110 125
T
ime (ns)
Temperature (°C)
V
DD
= 18V
t
R
, 470 pF
t
F
, 470 pF
t
F
, 1000 pF
t
R
, 1000 pF
1
10
100
1000
10000
4
6
8
10
12
14
16
18
Crossover Current (µA)
Supply Voltage (V)
500 kHz
200 kHz
100 kHz
50 kHz
2014 Microchip Technology Inc.
DS20005369A-page 7
MCP14A0051/2
Note:
Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
18V.
FIGURE 2-7:
Input Propagation Delay vs.
Supply Voltage.
FIGURE 2-8:
Input Propagation Delay
Time vs. Input Amplitude.
FIGURE 2-9:
Input Propagation Delay vs.
Temperature.
FIGURE 2-10:
Enable Propagation Delay
vs. Supply Voltage.
FIGURE 2-11:
Enable Propagation Delay
Time vs. Enable Voltage Amplitude.
FIGURE 2-12:
Enable Propagation Delay
vs. Temperature.
20
25
30
35
40
45
50
4
6
8
10
12
14
16
18
Input Propagation
Delay
(ns)
Supply Voltage (V)
V
IN
= 5V
t
D1
t
D2
20
25
30
35
40
4
6
8
10
12
14
16
18
Input Propogation
Delay
(ns)
Input Voltage Amplitude (V)
t
D2
t
D1
V
DD
= 18V
20
25
30
35
40
-40 -25 -10
5
20
35
50
65
80
95 110 125
Input Propagation
Delay
(ns)
Temperature (°C)
V
DD
= 18V
V
IN
= 5V
t
D2
t
D1
20
25
30
35
40
45
50
4
6
8
10
12
14
16
18
Enable Propagation Delay
(ns)
Supply Voltage (V)
V
EN
= 5V
t
D3
t
D4
20
25
30
35
40
4
6
8
10
12
14
16
18
Enable Propagation Delay
(ns)
Enable Voltage Amplitude (V)
t
D4
t
D3
V
DD
= 18V
20
25
30
35
40
-40 -25 -10
5
20
35
50
65
80
95 110 125
Enable Propagation Delay
(ns)
Temperature (°C)
t
D4
t
D3
V
DD
= 18V
V
EN
= 5V
MCP14A0051/2
DS20005369A-page 8
2014 Microchip Technology Inc.
Note:
Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
18V.
FIGURE 2-13:
Quiescent Supply Current
vs. Supply Voltage.
FIGURE 2-14:
Quiescent Supply Current
vs. Temperature.
FIGURE 2-15:
Input Threshold vs.
Temperature.
FIGURE 2-16:
Input Threshold vs Supply
Voltage.
FIGURE 2-17:
Enable Threshold vs.
Temperature.
FIGURE 2-18:
Enable Threshold vs Supply
Voltage.
250
300
350
400
4
6
8
10
12
14
16
18
Quiescent Current (µA)
Supply Voltage (V)
V
IN
= 3V,V
EN
= 3V
V
IN
= 0V,V
EN
= 0V
V
IN
= 3V,V
EN
= 0V or V
IN
= 0V,V
EN
= 3V
200
250
300
350
400
450
500
550
-40 -25 -10
5
20 35 50 65 80 95 110 125
Quiescent Current (µA)
Temperature (°C)
V
DD
= 18V
V
IN
= 5V,V
EN
= 5V
V
IN
= 0V,V
EN
= 0V
V
IN
= 5V,V
EN
= 0V or V
IN
= 0V,V
EN
= 5V
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
-40 -25 -10
5
20
35
50
65
80
95 110 125
Input Threshold
(V)
Temperature (°C)
V
DD
= 18V
V
IL
V
IH
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
4
6
8
10
12
14
16
18
Input Threshold
(V)
Supply Voltage (V)
V
IL
V
IH
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
-40 -25 -10
5
20
35
50
65
80
95 110 125
Enable Threshold (V)
Temperature (°C)
V
DD
= 18V
V
EL
V
EH
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
4
6
8
10
12
14
16
18
Enable Threshold (V)
Supply Voltage (V)
V
EL
V
EH
2014 Microchip Technology Inc.
DS20005369A-page 9
MCP14A0051/2
Note:
Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
18V.
FIGURE 2-19:
Output Resistance (Output
High) vs. Supply Voltage.
FIGURE 2-20:
Output Resistance (Output
Low) vs. Supply Voltage.
FIGURE 2-21:
Supply Current vs.
Capacitive Load (V
DD
= 18V).
FIGURE 2-22:
Supply Current vs.
Capacitive Load (V
DD
= 12V).
FIGURE 2-23:
Supply Current vs.
Capacitive Load (V
DD
= 6V).
FIGURE 2-24:
Supply Current vs.
Frequency (V
DD
= 18V).
10
15
20
25
30
35
40
45
4
6
8
10
12
14
16
18
R
OH
- Output Resistance
(Ω
)
Supply Voltage (V)
T
A
= +25
°C
T
A
= +125
°C
V
IN
= 0V (MCP14A0051)
V
IN
= 5V (MCP14A0052)
5
10
15
20
25
4
6
8
10
12
14
16
18
R
OL
- Output Resistance
(Ω
)
Supply Voltage (V)
T
A
= +25
°C
T
A
= +125
°C
V
IN
= 5V (MCP14A0051)
V
IN
= 0V (MCP14A0052)
0
10
20
30
40
50
60
70
80
90
100
100
1000
10000
Supply
Current
(mA)
Capacitive Load (pF)
1 MHz
500 kHz
200 kHz
100 kHz
50 kHz
10 kHz
V
DD
= 18V
0
5
10
15
20
25
30
35
40
45
50
100
1000
10000
Supply
Current
(mA)
Capacitive Load (pF)
1 MHz
500 kHz
200 kHz
100 kHz
50 kHz
10 kHz
V
DD
= 12V
0
5
10
15
20
25
30
100
1000
10000
Supply
Current
(mA)
Capacitive Load (pF)
1 MHz
500 kHz
200 kHz
100 kHz
50 kHz
10 kHz
V
DD
= 6V
0
10
20
30
40
50
60
70
80
90
100
10
100
1000
Supply
Current
(mA)
Switching Frequency (kHz)
10000 pF
6800 pF
3300 pF
1000 pF
470 pF
100 pF
V
DD
= 18V
MCP14A0051/2
DS20005369A-page 10
2014 Microchip Technology Inc.
Note:
Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
18V.
FIGURE 2-25:
Supply Current vs.
Frequency (V
DD
= 12V).
FIGURE 2-26:
Supply Current vs.
Frequency (V
DD
= 6V).
FIGURE 2-27:
Enable Current vs. Supply
Voltage.
0
5
10
15
20
25
30
35
40
45
50
10
100
1000
Supply
Current
(mA)
Switching Frequency (kHz)
10000 pF
6800 pF
3300 pF
1000 pF
470 pF
100 pF
V
DD
= 12V
0
5
10
15
20
25
30
10
100
1000
Supply
Current
(mA)
Switching Frequency (kHz)
10000 pF
6800 pF
3300 pF
1000 pF
470 pF
100 pF
V
DD
= 6V
8
9
10
11
12
13
14
4
6
8
10
12
14
16
18
Enable Current (uA)
Supply Voltage (V)
T
A
= +25
°C
T
A
= +125
°C