Low-Voltage 1.2V/1.8V CML 1:2 Fanout Buffer, 3.2 Gbps, 3.2 GHz

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DS20005525A-page 1

SY54011R

Features

• 1.2V/1.8V CML 1:2 Fanout Buffer
• Guaranteed AC Performance over Temperature

and Voltage:
- DC-to->3.2 Gbps Throughput
- <300 ps Propagation Delay (IN-to-Q)
- <15 ps Within-Device Skew
- <95 ps Rise/Fall Times

• Ultra-Low Jitter Design

- 50 fs

RMS

 Typical Additive Phase Jitter

• High Speed CML Outputs
• 2.5V ±5%, 1.2V/1.8V ±5% Power Supply

Operation

• Industrial Temperature Range: –40°C to +85°C
• Available in 16-pin (3 mm x 3 mm) QFN Package

Applications

• Data Distribution: OC-48, OC-48+FEC
• SONET Clock and Data Distribution
• Fibre Channel Clock and Data Distribution
• Gigabit Ethernet Clock and Data Distribution

Markets

• Storage
• ATE
• Test and Measurement
• Enterprise Networking Equipment
• High-End Servers
• Access
• Metro Area Network Equipment

General Description

The SY54011R is a fully differential, low-voltage
1.2V/1.8V CML 1:2 fanout buffer. It is optimized to
provide two identical output copies with less than 15 ps
of skew and 50 fs

RMS

 of typical additive phase jitter.

The SY54011R can process clock signals as fast as
3.2 GHz or data patterns up to 3.2 Gbps.
The differential input includes a unique, 3-pin input
termination architecture that interfaces to LVPECL,
LVDS or CML differential signals, (AC- or DC-coupled
from a 2.5V driver) as small as 100 mV (200 mV

PP

)

without any level-shifting or termination resistor
networks in the signal path. For AC-coupled input
interface applications, an integrated voltage reference
(V

REF-AC

) is provided to bias the V

T

 pin. The outputs

are CML, with extremely fast rise/fall times less than
95 ps.
The SY54011R operates from a 2.5V ±5% core supply
and a 1.2V or 1.8V ±5% output supply and is
guaranteed over the full industrial temperature range (–
40°C to +85°C). The SY54011R is part of the high
speed, Precision Edge

®

 product line.

Package Type

SY54011R

3x3 QFN

(Top View)

IN

VT

VREF-AC

/IN

Q0
/Q0
/Q1
Q1

VCCO

GND

GND

VCC

VCCO

GND

GND

VCC

1
2
3
4

5 6

7 8

12

11

10

9

16 15 14 13

Low-Voltage 1.2V/1.8V CML 1:2 Fanout Buffer, 3.2 Gbps, 3.2 GHz

United States Patent No. RE44,134

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SY54011R

DS20005525A-page 2

 2018 Microchip Technology Inc.

Functional Block Diagram

SY54011R

3

3 QFN

IN

V

T

/IN

V

REF-AC

50Ÿ

50Ÿ

Q0

/Q0

Q1

/Q1

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DS20005525A-page 3

SY54011R

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings †

Supply Voltage (V

CC

) ................................................................................................................................ –0.5V to +3.0V

Supply Voltage (V

CCO

).............................................................................................................................. –0.5V to +2.7V

V

CC

 - V

CCO

...............................................................................................................................................................<1.8V

V

CCO

 - V

CC

...............................................................................................................................................................<0.5V

Input Voltage (V

IN

) ....................................................................................................................................... –0.5V to V

CC

CML Output Voltage (V

OUT

) ................................................................................................................0.6V to V

CCO

+0.5V

Current (V

T

)

Source or sink current on V

T

 pin...........................................................................................................±100 mA

Input Current 

Source or sink current on (IN, /IN) ..........................................................................................................±50 mA

Current (V

REF-AC

)

Source or sink current on V

REF-AC 

(

Note 1

)...........................................................................................±0.5 mA

Operating Ratings ††

Supply Voltage (V

CC

) ............................................................................................................................ 2.375V to 2.625V

                         (V

CCO

)................................................................................................................................ 1.14V to 1.9V

 Notice: Permanent device damage may occur if absolute maximum ratings are exceeded. This is a stress rating only

and functional operation is not implied at conditions other than those detailed in the operational sections of this data
sheet. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.
††

 Notice: The data sheet limits are not guaranteed if the device is operated beyond the operating ratings.

Note 1:

Due to the limited drive capability, use for input of the same package only.

TABLE 1-1:

ELECTRICAL CHARACTERISTICS (

Note 1

)

Electrical Characteristics:

 Unless otherwise indicated, T

A

 = –40°C to +85°C.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Power Supply Voltage 
Range

V

CC

2.375

2.500

2.625

V

V

CC

1.140

1.200

1.260

V

V

CCO

1.700

1.800

1.900

V

V

CCO

Power Supply Current

I

CC

15

22

mA

Max.  V

CC

Power Supply Current

I

CCO

32

42

mA

No Load. V

CCO

Input Resistance
(IN-to-V

T

, /IN-to-V

T

)

R

IN

45

50

55

Differential Input 
Resistance
(IN-to-/IN)

R

DIFF_IN

90

100

110

Input HIGH Voltage (IN, 
/IN)

V

IH

1.2

V

CC

V

IN, /IN

Input LOW Voltage (IN, 
/IN)

V

IL

0.2

V

IH

 – 0.1

V

V

IL

 with V

IH

 of 

1.2V

Input HIGH Voltage (IN, 
/IN)

V

IH

1.140

V

CC

V

IN, /IN

Input LOW Voltage (IN, 
/IN)

V

IL

0.66

V

IH

 – 0.10

V

V

IL

 with V

IH

 of 

1.140V, (1.2V-5%)

Note 1:

The circuit is designed to meet the DC specifications shown in the above table after thermal equilibrium 
has been established.

2:

Due to the limited drive capability, use for input of the same package only.

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SY54011R

DS20005525A-page 4

 2018 Microchip Technology Inc.

TABLE 1-3:

AC ELECTRICAL CHARACTERISTICS

Input Voltage Swing (IN, 
/IN)

V

IN

0.1

1.0

V

See 

Figure 6-3

Differential Input Voltage 
Swing (|IN, /IN|)

V

DIFF_IN

0.2

2.0

V

See 

Figure 6-5

Output Reference Voltage

V

REF-AC

V

CC 

– 1.3

V

CC 

– 1.15

V

CC 

– 1.0

V

Note 2

Voltage from Input to V

T

V

T_IN

1.28

V

TABLE 1-1:

ELECTRICAL CHARACTERISTICS (

Note 1

) (CONTINUED)

Electrical Characteristics:

 Unless otherwise indicated, T

A

 = –40°C to +85°C.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Note 1:

The circuit is designed to meet the DC specifications shown in the above table after thermal equilibrium 
has been established.

2:

Due to the limited drive capability, use for input of the same package only.

TABLE 1-2:

CML OUTPUTS DC ELECTRICAL CHARACTERISTICS (

Note 1

V

CCO

 = 1.14V to 1.26V, R

L

 = 50Ω to V

CCO

V

CCO

 = 1.7V to 1.9V, R

L

 = 50Ω to V

CCO 

or 100Ω across the outputs,   

V

CC

 = 2.375V to 2.625V. T

A

 = –40°C to +85°C, unless otherwise stated.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Output HIGH Voltage

V

OH

V

CCO 

– 0.020

V

CCO 

– 0.010

V

CCO

V

R

L

 = 50Ω to V

CCO

Output Voltage Swing

V

OUT

300

390

475

mV

See 

Figure 6-3

Differential Output 
Voltage Swing

V

DIFF_OUT

600

780

950

mV

See 

Figure 6-5

Output Source 
Impedance

R

OUT

45

50

55

Note 1:

The circuit is designed to meet the DC specifications shown in the above table after thermal equilibrium 
has been established.

V

CCO

 = 1.14V to 1.26V, R

L

 = 50Ω to V

CCO

V

CCO

 = 1.7V to 1.9V, R

L

 = 50Ω to V

CCO 

or 100Ω across the outputs,   

V

CC

 = 2.375V to 2.625V. T

A

 = –40°C to +85°C, unless otherwise stated.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Maximum Frequency

f

MAX

3.2

Gbps

NRZ Data

3.2

GHz

V

OUT

 > 200 mV 

Propagation Delay IN-to-Q

t

PD

150

205

300

ps

Figure 6-1

Within Device Skew

t

SKEW

3

15

ps

Note 1

Part-to-Part Skew

75

ps

Note 2

Additive Phase Jitter

t

JITTER

42

fs

RMS

Carrier = 622 MHz
Integration Range: 
12 kHz – 20 MHz

250

Carrier = 
156.25 MHz.
Integration Range: 
12 kHz – 20 MHz

Output Rise/Fall Times
(20% to 80%)

t

R

, t

F

30

60

95

ps

At full output 
swing.

Duty Cycle

47

53

%

Differential I/O

Note 1:

Within device skew is measured between two different outputs under identical input transitions.

2:

Part-to-part skew is defined for two parts with identical power supply voltages at the same temperature
and no skew at the edges at the respective inputs.

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DS20005525A-page 5

SY54011R

TEMPERATURE SPECIFICATIONS (

Note 1

)

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Temperature Ranges
Operating Ambient Temperature Range

T

A

–40

+85

°C

Junction Operating Temperature 

T

J

+125

°C

Storage Temperature Range

T

S

–65

+150

°C

Lead Temperature

+260

°C

Soldering, 20 sec.

Package Thermal Resistance (

Note 2

)

Thermal Resistance, 3 x 3 QFN-16LD

JA

75

°C/W

Still-Air

JB

33

°C/W

Junction-to-board

Note 1:

The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction to air (i.e., T

A

, T

J

JA

). Exceeding the max-

imum allowable power dissipation will cause the device operating junction temperature to exceed the max-
imum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability.

2:

Package thermal resistance assumes exposed pad is soldered (or equivalent) to the device's most nega-
tive potential on the PCB. θ

JA

 and Ψ

Jb

 values are determined for a 4-layer board in still-air number, unless

otherwise stated.

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SY54011R

DS20005525A-page 6

 2018 Microchip Technology Inc.

2.0

TYPICAL OPERATING CHARACTERISTICS

For 

Figure 2-1

 through 

Figure 2-3

, V

CC

 = 2.5V, V

CCO

 = 1.2V, GND = 0V, V

IN

 = 100 mV; R

L

 = 50Ω to 1.2V; T

A

 = +25°C,

unless otherwise stated.

FIGURE 2-1:

Amplitude vs. Frequency.

FIGURE 2-2:

Propagation Delay vs. 

Temperature.

FIGURE 2-3:

Within-Device Skew vs. 

Temperature.

Note:

The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

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DS20005525A-page 7

SY54011R

For 

Figure 2-4

 through 

Figure 2-7

, V

CC

 = 2.5V, V

CCO

 = 1.2V, GND = 0V, V

IN

 = 100 mV; R

L

 = 50Ω to 1.2V, 

Data Pattern: 2

23

-1; T

A

 = +25°C, unless otherwise stated.

FIGURE 2-4:

1.0 Gbps Data.

FIGURE 2-5:

1.0 GHz Clock.

FIGURE 2-6:

3.2 Gbps Data.

FIGURE 2-7:

3.2 GHz Clock.

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SY54011R

DS20005525A-page 8

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3.0

PIN DESCRIPTIONS

The descriptions of the pins are listed in 

Table 3-1

.

TABLE 3-1:

PIN FUNCTION TABLE

Pin Number

Symbol

Description

1, 4

IN, /IN

Differential Input: This input pair is the differential signal input to the device. Input 
accepts differential signals as small as 100 mV (200 mV

PP

). Each input pin 

internally terminates with 50Ω to the V

T

 pin.

2

V

T

Input Termination Center-Tap: Each side of the differential input pair terminates to 
V

T

 pin. This pin provides a center-tap to a termination network for maximum 

interface flexibility. See the 

Input Interface Applications

 section. 

3

V

REF-AC

Reference Voltage: This output biases to V

CC 

– 1.150V. It is used for AC-coupling 

inputs IN and /IN. Connect V

REF-AC

 directly to the V

T

 pin. Bypass with 0.1 µF low 

ESR capacitor to V

CC

. Maximum sink/source current is ±0.5 mA. See the 

Input 

Interface Applications

 section. 

5, 16

V

CC

Positive Power Supply: Bypass with 0.1 µF/0.01 µF low ESR capacitors as close to 
the V

CC

 pins as possible. Supplies input and core circuitry.

8, 13

V

CCO

Output Supply: Bypass with 0.1 µF//0.01 µF low ESR capacitors as close to the 
V

CCO

 pins as possible. Supplies the output buffers.

6, 7, 14, 15

GND, EP Ground: Exposed pad must be connected to a ground plane that is the same 

potential as the ground pins.

10, 9

11, 12

/Q1, Q1
/Q0, Q0

CML Differential Output Pairs: Differential buffered copies of the input signal. The 
output swing is typically 390 mV. See the 

Input Interface Applications

 section for 

termination information.

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DS20005525A-page 9

SY54011R

4.0

INTERFACE APPLICATIONS

For Input Interface Applications see 

Figure 7-1

 through

Figure 7-7

 and for CML Output Termination see

Figure 8-1

 through 

Figure 8-4

.

4.1

CML Output Termination with 
V

CCO

 1.2V

For V

CCO

 of 1.2V (see 

Figure 8-1

), terminate the output

with 50Ω-to-1.2V, DC-coupled, not 100Ω differentially
across the outputs. 
If AC-coupling is used (see 

Figure 8-4

), terminate into

50Ω-to-1.2V before the coupling capacitor and then
connect to a high value resistor to a reference voltage.
Do not AC couple with internally terminated receiver.
For example, 50Ω ANY-IN input. AC-coupling will offset
the output voltage by 200 mV and this offset voltage will
be too low for proper driver operation.
Any unused output pair needs to be terminated when
V

CCO

 is 1.2V, do not leave floating.

4.2

CML Output Termination with 
V

CCO

 1.8V

For V

CCO

 of 1.8V, 

Figure 8-1

 and 

Figure 8-2

, terminate

with either 50Ω-to-V

CCO

 or 100Ω differentially across

the outputs. AC- or DC-coupling is fine.

4.3

Input AC Coupling

The SY54011R input can accept AC coupling from any
driver. Tie V

T

 to V

REF-AC

 and bypass with a 0.1 µF

capacitor as shown in 

Figure 7-3

 and 

Figure 7-4

.

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SY54011R

DS20005525A-page 10

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5.0

ADDITIVE PHASE NOISE PLOTS

V

CC

 = +2.5V, GND = 0V, T

A

 = +25°C.

FIGURE 5-1:

Typical Additive Phase Jitter: 622 MHz Carrier, 12 kHz to 20 MHz Range, 42 fs

RMS

.

Maker
Microchip Technology Inc.
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