2017 Microchip Technology Inc.
DS20005696A-page 1
LND01
Features
• Bi-directional
• Low On-resistance
• Low Input Capacitance
• Fast Switching Speeds
• High Input Impedance and High Gain
• Low Power Drive Requirement
• Ease of Paralleling
Applications
• Normally-on Switches
• Solid-state Relays
• Converters
• Constant Current Sources
• Analog Switches
General Description
The LND01 is a low-threshold, Depletion-mode
(normally-on) transistor that uses an advanced lateral
DMOS structure and a well-proven silicon gate
manufacturing process. This combination produces a
device with the power handling capabilities of bipolar
transistors as well as the high input impedance and
positive temperature coefficient inherent in
MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally
induced secondary breakdown.
The body of the transistor is connected to the gate pin.
The channel is therefore being pinched off by both the
gate and body. The gate pin has a diode connected to
the drain terminal and another diode connected to the
source terminal.
Package Type
5-lead SOT-23
See
Table 2-1
for pin information.
DRAIN
SOURCE
GATE
N/C
N/C
Lateral N-Channel Depletion-Mode MOSFET
LND01
DS20005696A-page 2
2017 Microchip Technology Inc.
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings†
Drain-to-source Voltage ....................................................................................................................................... BV
DSX
Source-to-drain Voltage........................................................................................................................................ BV
SDX
Gate-to-source Voltage ............................................................................................................................ –12V to +0.6V
Gate-to-drain Voltage ............................................................................................................................... –12V to +0.6V
Operating Ambient Temperature, T
A
................................................................................................... –25°C to +125°C
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at those or any other conditions above those
indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
Electrical Specifications: T
A
= 25°C unless otherwise specified. (
Note 1
)
Parameter
Sym.
Min.
Typ.
Max.
Unit
Conditions
Drain-to-source Breakdown Voltage
BV
DSX
9
—
—
V
V
GS
= –3V, I
DS
= 10 µA
Source-to-drain Breakdown Voltage
BV
SDX
9
—
—
V
V
GD
= –3V, I
SD
= 10 µA
Gate-to-source Off Voltage
V
GS(OFF)
–0.8
—
–3
V
V
DS
= 9V, I
DS
= 1 µA
Source-to-gate Off Voltage
V
SG(OFF)
–0.8
—
–3
V
V
SD
= 9V, I
SD
= 1 µA
Gate-to-source Diode
V
GS
–12
—
0.6
V
I
GS
= ±1 µA
Gate-to-drain Diode
V
GD
–12
—
0.6
V
I
GD
= ±1 µA
Drain-to-source Leakage Current
I
DS(OFF)
—
—
1
µA
V
GS
= –3V, V
DS
= 9V
Source-to-drain Leakage Current
I
SD(OFF)
—
—
1
µA
V
GD
= –3V, V
SD
= 9V
Saturated Drain-to-source Current
I
DSS
300
—
—
mA
V
GS
= 0V, V
DS
= 9V
Saturated Source-to-drain Current
I
SDD
300
—
—
mA
V
GD
= 0V, V
SD
= 9V
Static Drain-to-source On-state
Resistance
R
DS(ON)
—
0.9
1.4
Ω
V
GS
= 0V, I
DS
= 100 mA
Static Source-to-drain On-state
Resistance
R
SD(ON)
—
0.9
1.4
Ω
V
GD
= 0V, I
SD
= 100 mA
Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated.
(Pulse test: 300 µs pulse, 2% duty cycle)
2: Specification is obtained by characterization and is not 100% tested.
AC ELECTRICAL CHARACTERISTICS
Electrical Specifications: T
A
= 25°C unless otherwise specified. (
Note 2
)
Parameter
Sym.
Min.
Typ.
Max.
Unit
Conditions
Forward Transconductance
G
FS
200
—
—
mmho V
DS
= 9V, I
DS
= 50 mA
Input Capacitance
C
ISS
—
46
—
pF
V
GS
= –3V, V
DS
= 5V,
f = 1 MHz
Common Source Output Capacitance
C
OSS
—
32
—
pF
Reverse Transfer Capacitance
C
RSS
—
23
—
pF
Turn-on Delay Time
t
d(ON)
—
3.8
—
ns
V
DD
= 9V, I
DS
= 100 mA,
R
GEN
= 25Ω
Rise Time
t
r
—
11
—
ns
Turn-off Delay Time
t
d(OFF)
—
1
—
ns
Fall Time
t
f
—
6.4
—
ns
Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated.
(Pulse test: 300 µs pulse, 2% duty cycle)
2: Specification is obtained by characterization and is not 100% tested.
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise specified, for all specifications T
A
=T
J
= +25°C.
Parameter
Sym.
Min.
Typ.
Max.
Unit
Conditions
TEMPERATURE RANGE
Operating Ambient Temperature
T
A
–25
—
+125
°C
PACKAGE THERMAL RESISTANCE
5-lead SOT-23
JA
—
253
—
°C/W
THERMAL CHARACTERISTICS
Package
I
D
(
1
)
(Continuous)
(mA)
I
D
(Pulsed)
(mA)
Power Dissipation at T
C
= 25°C
(W)
5-lead SOT-23
330
600
0.36
Note 1: I
D
(continuous) is limited by maximum T
J
.
2017 Microchip Technology Inc.
DS20005696A-page 3
LND01
LND01
DS20005696A-page 4
2017 Microchip Technology Inc.
2.0
PIN DESCRIPTION
Table 2-1
shows the description of pins in LND01.
Refer to
Package Type
for the location of pins.
TABLE 2-1:
PIN FUNCTION TABLE
Pin Number
Pin Name
Description
1
N/C
Not connected
2
Gate
Gate
3
N/C
Not connected
4
Drain
Drain
5
Source
Source
2017 Microchip Technology Inc.
DS20005696A-page 5
LND01
3.0
FUNCTIONAL DESCRIPTION
Figure 3-1
illustrates the switching waveforms and test
circuit for LND01.
90%
10%
90%
90%
10%
10%
Pulse
Generator
VDD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
r
INPUT
0V
INPUT
-3.0V
VDD
OUTPUT
0V
R
GEN
t
f
SOURCE
GATE
DRAIN
FIGURE 3-1:
Switching Waveforms and Test Circuit.
TABLE 3-1:
PRODUCT SUMMARY
BV
DSX
/BV
SDX
(V)
R
DS(ON)
/R
SD(ON)
(Maximum)
(Ω)
I
DSS
/I
SSD
(Maximum)
(mA)
9
1.4
300
LND01
DS20005696A-page 6
2017 Microchip Technology Inc.
4.0
PACKAGING INFORMATION
4.1
Package Marking Information
Legend: XX...X
Product Code or Customer-specific information
Y
Year code (last digit of calendar year)
YY
Year code (last 2 digits of calendar year)
WW
Week code (week of January 1 is week ‘01’)
NNN
Alphanumeric traceability code
Pb-free
JEDEC
®
designator for Matte Tin (Sn)
*
This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Pre-plated
Note:
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for product code or customer-specific information. Package may or
not include the corporate logo.
3
e
3
e
WWNNN
XXXXY
15241
NDU7
5-lead SOT-23
Example
5-Lead SOT-23 Package Outline (K1)
2.90x1.60mm body, 1.45mm height (max), 0.95mm pitch
Symbol
A
A1
A2
b
D
E
E1
e
e1
L
L1
L2
ș
ș
Dimension
(mm)
MIN
0.90*
0.00
0.90
0.30
2.75*
2.60*
1.45*
0.95
BSC
1.90
BSC
0.30
0.60
REF
0.25
BSC
0
O
5
O
NOM
-
-
1.15
-
2.90
2.80
1.60
0.45
4
O
10
O
MAX
1.45
0.15
1.30
0.50
3.05*
3.00*
1.75*
0.60
8
O
15
O
JEDEC Registration MO-178, Variation AA, Issue C, Feb. 2000.
7KLVGLPHQVLRQLVQRWVSHFL¿HGLQWKH-('(&GUDZLQJ
Drawings not to scale.
1
5
D
Seating
Plane
Gauge
Plane
L
L1
L2
Top View
Side View
View A - A
View B
View B
θ1
θ
E1 E
A
A2
A1
A
A
Seating
Plane
e
b
Note 1
(Index Area
D/2 x E1/2)
e1
Note:
1.
$3LQLGHQWL¿HUPXVWEHORFDWHGLQWKHLQGH[DUHDLQGLFDWHG7KH3LQLGHQWL¿HUFDQEHDPROGHGPDUNLGHQWL¿HUDQHPEHGGHGPHWDOPDUNHURU
a printed indicator.
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
2017 Microchip Technology Inc.
DS20005696A-page 7
LND01
LND01
DS20005696A-page 8
2017 Microchip Technology Inc.
NOTES:
2017 Microchip Technology Inc.
DS20005696A-page 9
LND01
APPENDIX A: REVISION HISTORY
Revision A (June 2017)
• Converted Supertex Doc# DSFP-LND01
to Microchip DS20005696A
• Changed the package marking format
• Changed the quantity of the 5-lead SOT-23 K1
package from 2500/Reel to 3000/Reel
• Made minor text changes throughout the docu-
ment
LND01
DS20005696A-page 10
2017 Microchip Technology Inc.
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office
.
Example:
a) LND01K1-G
: Lateral N‐Channel Depletion‐Mode
MOSFET, 5‐lead SOT‐23,
3000/Reel
PART NO.
Device
Device:
LND01
=
Lateral N-Channel Depletion-Mode MOSFET
Package:
K1
=
5-lead SOT-23
Environmental:
G
=
Lead (Pb)-free/RoHS-compliant Package
Media Type:
(blank)
=
3000/Reel for a K1 Package
XX
Package
-
X - X
Environmental Media Type
Options