© 2009 Microchip Technology Inc.
DS21948E-page 1
MCP3905/06
Features
• Supplies active (real) power measurement for
single-phase, residential energy-metering
• Supports the IEC 62053 International Energy
Metering Specification and legacy IEC 1036/
61036/687 Specifications
• Two multi-bit, Digital-to-Analog Converters
(DACs), second-order, 16-bit, Delta-Sigma
Analog-to-Digital Converters (ADCs)
• 0.1% typical measurement error over 500:1
dynamic range (MCP3905)
• 0.1% typical measurement error over 1000:1
dynamic range (MCP3906)
• Programmable Gain Amplifier (PGA) for small-
signal inputs supports low-value shunt current
sensor
- 16:1 PGA - MCP3905
- 32:1 PGA - MCP3906
• Ultra-low drift on-chip reference: 15 ppm/°C
(typical)
• Direct drive for electromagnetic mechanical
counter and two-phase stepper motors
• Low I
DD
of 4 mA (typical)
• Tamper output pin for negative power indication
• Industrial Temperature Range: -40°C to +85°C
• Supplies instantaneous active (real) power on
HF
OUT
for meter calibration
US Patents Pending
Description
The MCP3905/06 devices are energy-metering ICs
designed to support the IEC 62053 International
Metering Standard Specification. They supply a
frequency output proportional to the average active
(real) power, as well as a higher-frequency output
proportional to the instantaneous power for meter
calibration. They include two 16-bit, delta-sigma ADCs
for a wide range of I
B
and I
MAX
currents and/or small
shunt (< 200 µOhms) meter designs. It includes an
ultra-low drift voltage reference with < 15 ppm/°C
through a specially designed band gap temperature
curve for the minimum gradient across the industrial
temperature range. A fixed-function DSP block is
on-chip for active (real) power calculation. Strong
output drive for mechanical counters are on-chip to
reduce field failures and mechanical counter sticking. A
no-load threshold block prevents any current creep
measurements. A Power-On Reset (POR) block
restricts meter performance during low-voltage
situations. These accurate energy-metering ICs with
high field reliability are available in the industry-
standard pinout.
Package Type
Functional Block Diagram
F
OUT0
D
GND
NEG
1
2
3
4
24
23
22
21
20
19
18
17
5
6
7
8
F
OUT1
NC
OSC2
OSC1
DV
DD
HPF
AV
DD
NC
CH0+
CH0-
CH1-
CH1+
HF
OUT
16
9
G0
MCLR
15
14
10
11
G1
F0
REFIN/OUT
A
GND
13
12
F1
F2
24-Pin SSOP
16-bit
ΔΣ ADC
MCLR
+
–
CH0+
CH0-
Reference
2.4V
+
–
CH1+
CH1-
HPF1
LPF1
E-to-F
conversion
REFIN/
F
OUT1
HF
OUT
G0 G1
F2
F1
F
OUT0
OSC1
OSC2
OUT
NEG
HPF
F0
Multi-level
16-bit
ΔΣ ADC
Multi-level
X
HPF1
PGA
POR
Energy-Metering ICs with Active (Real) Power Pulse Output
Obsolete Device
Replacement Device:
MCP3905A/MCP3906A
MCP3905/06
DS21948E-page 2
© 2009 Microchip Technology Inc.
NOTES:
© 2009 Microchip Technology Inc.
DS21948E-page 3
MCP3905/06
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
DD
...................................................................................7.0V
Digital inputs and outputs w.r.t. A
GND
........ -0.6V to V
DD
+0.6V
Analog input w.r.t. A
GND
..................................... ....-6V to +6V
V
REF
input w.r.t. A
GND
.............................. -0.6V to V
DD
+0.6V
Storage temperature .....................................-65°C to +150°C
Ambient temp. with power applied ................-65°C to +125°C
Soldering temperature of leads (10 seconds) ............. +300°C
ESD on the analog inputs (HBM,MM) ................. 5.0 kV, 500V
ESD on all other pins (HBM,MM) ........................ 5.0 kV, 500V
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operation listings of this specification is not implied. Exposure
to maximum rating conditions for extended periods may affect
device reliability.
ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all parameters apply at AV
DD
= DV
DD
= 4.5V – 5.5V,
Internal V
REF
, HPF turned on (AC mode), A
GND
, D
GND
= 0V, MCLK = 3.58 MHz; T
A
= -40°C to +85°C.
Parameter
Sym
Min
Typ.
Max
Units
Comment
Overall Measurement Accuracy
Energy Measurement Error
E
—
0.1
—
% F
OUT
Channel 0 swings 1:500 range,
MCP3905 only (Note 1, Note 4)
—
0.1
—
% F
OUT
Channel 0 swings 1:1000 range,
MCP3906 only (Note 1, Note 4)
No-Load Threshold/
Minimum Load
NLT
—
0.0015
—
% F
OUT
Max.
Disabled when F2, F1, F0 = 0, 1, 1
(Note 5, Note 6)
Phase Delay Between
Channels
—
—
1/MCLK
s
HPF = 0 and 1, < 1 MCLK
(Note 4, Note 6, Note 7)
AC Power Supply
Rejection Ratio
(Output Frequency Variation)
AC PSRR
—
0.01
—
% F
OUT
F2, F1, F0 = 0, 1, 1 (Note 3)
DC Power Supply
Rejection Ratio
(Output Frequency Variation)
DC PSRR
—
0.01
—
% F
OUT
HPF = 1, Gain = 1 (Note 3)
System Gain Error
—
3
10
% F
OUT
Note 2, Note 5
ADC/PGA Specifications
Offset Error
V
OS
—
2
5
mV
Referred to Input
Gain Error Match
—
0.5
—
% F
OUT
Note 8
Internal Voltage Reference
Voltage
—
2.4
—
V
Tolerance
—
±2
—
%
Tempco
—
15
—
ppm/°C
Note 1:
Measurement error = (Energy Measured By Device - True Energy)/True Energy * 100%. Accuracy is
measured with signal (±660 mV) on Channel 1. F
OUT0
, F
OUT1
pulse outputs. Valid from 45 Hz to 65 Hz.
See Section 2.0 “Typical Performance Curves” for higher frequencies and increased dynamic range.
2:
Does not include internal V
REF
. Gain = 1, CH0 = 470 mVDC, CH1 = 660 mVDC, difference between
measured output frequency and expected transfer function.
3:
Percent of HF
OUT
output frequency variation; Includes external V
REF
= 2.5V, CH1 = 100 mVRMS @
50 Hz, CH2 = 100 mVRMS @ 50 Hz, AV
DD
= 5V + 1V
pp
@ 100 Hz. DC PSRR: 5V ±500 mV.
4:
Error applies down to 60° lead (PF = 0.5 capacitive) and 60° lag (PF = 0.5 inductive).
5:
Refer to Section 4.0 “Device Overview” for complete description.
6:
Specified by characterization, not production tested.
7:
1 MCLK period at 3.58 MHz is equivalent to less than <0.005 degrees at 50 or 60 Hz.
8:
Gain error match is measured from CH0 G = 1 to any other gain setting.
MCP3905/06
DS21948E-page 4
© 2009 Microchip Technology Inc.
TEMPERATURE CHARACTERISTICS
Reference Input
Input Range
2.2
—
2.6
V
Input Impedance
3.2
—
—
k
Ω
Input Capacitance
—
—
10
pF
Analog Inputs
Maximum Signal Level
—
—
±1
V
CH0+,CH0-,CH1+,CH1- to A
GND
Differential Input Voltage
Range Channel 0
—
—
±470/G
mV
G = PGA Gain on Channel 0
Differential Input Voltage
Range Channel 1
—
—
±660
mV
Input Impedance
390
—
—
k
Ω
Proportional to 1/MCLK frequency
Bandwidth
(Notch Frequency)
—
14
—
kHz
Proportional to MCLK frequency,
MCLK/256
Oscillator Input
Frequency Range
MCLK
1
—
4
MHz
Power Specifications
Operating Voltage
4.5
—
5.5
V
AV
DD,
DV
DD
I
DD,A
I
DD,A
—
2.7
3.0
mA
AV
DD
pin only
I
DD,D
I
DD,D
—
1.2
2.0
mA
DV
DD
pin only
Electrical Specifications: Unless otherwise indicated, V
DD
= 4.5V – 5.5V, A
GND
, D
GND
= 0V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
T
A
-40
—
+85
°C
Operating Temperature Range
T
A
-40
—
+125
°C
Note
Storage Temperature Range
T
A
-65
—
+150
°C
Thermal Package Resistances
Thermal Resistance, 24L-SSOP
θ
JA
—
73
—
°C/W
Note:
The MCP3905/06 operate over this extended temperature range, but with reduced performance. In any
case, the Junction Temperature (T
J
) must not exceed the Absolute Maximum specification of +150°C.
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, all parameters apply at AV
DD
= DV
DD
= 4.5V – 5.5V,
Internal V
REF
, HPF turned on (AC mode), A
GND
, D
GND
= 0V, MCLK = 3.58 MHz; T
A
= -40°C to +85°C.
Parameter
Sym
Min
Typ.
Max
Units
Comment
Note 1:
Measurement error = (Energy Measured By Device - True Energy)/True Energy * 100%. Accuracy is
measured with signal (±660 mV) on Channel 1. F
OUT0
, F
OUT1
pulse outputs. Valid from 45 Hz to 65 Hz.
See Section 2.0 “Typical Performance Curves” for higher frequencies and increased dynamic range.
2:
Does not include internal V
REF
. Gain = 1, CH0 = 470 mVDC, CH1 = 660 mVDC, difference between
measured output frequency and expected transfer function.
3:
Percent of HF
OUT
output frequency variation; Includes external V
REF
= 2.5V, CH1 = 100 mVRMS @
50 Hz, CH2 = 100 mVRMS @ 50 Hz, AV
DD
= 5V + 1V
pp
@ 100 Hz. DC PSRR: 5V ±500 mV.
4:
Error applies down to 60° lead (PF = 0.5 capacitive) and 60° lag (PF = 0.5 inductive).
5:
Refer to Section 4.0 “Device Overview” for complete description.
6:
Specified by characterization, not production tested.
7:
1 MCLK period at 3.58 MHz is equivalent to less than <0.005 degrees at 50 or 60 Hz.
8:
Gain error match is measured from CH0 G = 1 to any other gain setting.
© 2009 Microchip Technology Inc.
DS21948E-page 5
MCP3905/06
FIGURE 1-1:
Output Timings for Pulse Outputs and Negative Power Pin.
TIMING CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all parameters apply at AV
DD
= DV
DD
= 4.5V – 5.5V,
A
GND
, D
GND
= 0V, MCLK = 3.58 MHz; T
A
= -40°C to +85°C.
Parameter
Sym
Min
Typ
Max
Units
Comment
Frequency Output
F
OUT0
and F
OUT1
Pulse Width
(Logic-Low)
t
FW
—
275
—
ms
984376 MCLK periods
(Note 1)
HF
OUT
Pulse Width
t
HW
—
90
—
ms
322160 MCLK periods
(Note 2)
F
OUT0
and F
OUT1
Pulse Period
t
FP
Refer to
Equation 4-1
s
HF
OUT
Pulse Period
t
HP
Refer to
Equation 4-2
s
F
OUT0
to F
OUT1
Falling-Edge Time
t
FS2
—
0.5 t
FP
—
F
OUT0
to F
OUT1
Min Separation
t
FS
—
4/MCLK
—
F
OUT0
and F
OUT1
Output High Voltage
V
OH
4.5
—
—
V
I
OH
= 10 mA, DV
DD
= 5.0V
F
OUT0
and F
OUT1
Output Low Voltage
V
OL
—
—
0.5
V
I
OL
= 10 mA, DV
DD
= 5.0V
HF
OUT
Output High Voltage
V
OH
4.0
—
—
V
I
OH
= 5 mA, DV
DD
= 5.0V
HF
OUT
Output Low Voltage
V
OL
—
—
0.5
V
I
OL
= 5 mA, DV
DD
= 5.0V
High-Level Input Voltage
(All Digital Input Pins)
V
IH
2.4
—
—
V
DV
DD
= 5.0V
Low-Level Input Voltage
(All Digital Input Pins)
V
IL
—
—
0.85
V
DV
DD
= 5.0V
Input Leakage Current
—
—
±3
µA
V
IN
= 0, V
IN
= DV
DD
Pin Capacitance
—
—
10
pF
Note 3
Note 1:
If output pulse period (t
FP
) falls below 984376*2 MCLK periods, then t
FW
= 1/2 t
FP
.
2:
If output pulse period (t
HP
) falls below 322160*2 MCLK periods, then t
HW
= 1/2 t
HP
.
3:
Specified by characterization, not production tested.
F
OUT0
t
FP
F
OUT1
HF
OUT
t
FW
t
HP
t
HW
t
FS
t
FS2
NEG
MCP3905/06
DS21948E-page 6
© 2009 Microchip Technology Inc.
NOTES:
© 2009 Microchip Technology Inc.
DS21948E-page 7
MCP3905/06
2.0
TYPICAL PERFORMANCE CURVES
Note: Unless otherwise specified, DV
DD
, AV
DD
= 5V; A
GND
, D
GND
= 0V; V
REF
= Internal, HPF = 1 (AC mode),
MCLK = 3.58 MHz.
FIGURE 2-1:
Measurement Error,
Gain = 8, PF = 1.
FIGURE 2-2:
Measurement Error,
Gain = 16, PF = 1.
FIGURE 2-3:
Measurement Error,
Gain = 32, PF = 1.
FIGURE 2-4:
Measurement Error,
Gain = 8, PF = 0.5.
FIGURE 2-5:
Measurement Error,
Gain = 16, PF = 0.5.
FIGURE 2-6:
Measurement Error,
Gain = 32, PF = 0.5.
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
-0.5
-0.4
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
0.0000
0.0001
0.0010
0.0100
0.1000
CH1 Vp-p Amplitude (V)
M
e
asu
re
ment
E
rr
o
r
+85°C
+25°C
-40°C
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
0.0000
0.0001
0.0010
0.0100
0.1000
CH1 Vp-p Amplitude (V)
M
e
a
s
ur
emen
t E
rro
r
+85°C
+25°C
- 40°C
-0.8
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
0.8
0.0000
0.0001
0.0010
0.0100
0.1000
CH1 Vp-p Amplitude (V)
M
e
a
s
ur
emen
t E
rro
r
+85°C
+25°C
- 40°C
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.0000
0.0001
0.0010
0.0100
0.1000
CH1 Vp-p Amplitude (V)
M
e
asu
re
m
e
nt
E
rr
o
r
+85°C
+25°C
-40°C
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.0000
0.0001
0.0010
0.0100
0.1000
CH1 Vp-p Amplitude (V)
M
e
asu
re
ment
E
rr
o
r
+85°C
+25°C
-40°C
-1
-0.8
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
0.8
1
0.0000
0.0001
0.0010
0.0100
0.1000
CH1 Vp-p Amplitude (V)
M
eas
ur
e
m
en
t E
rr
o
r
+85°C
+25°C
-40°C
MCP3905/06
DS21948E-page 8
© 2009 Microchip Technology Inc.
Note: Unless otherwise specified, DV
DD
, AV
DD
= 5V; A
GND
, D
GND
= 0V; V
REF
= Internal, HPF = 1 (AC mode),
MCLK = 3.58 MHz.
FIGURE 2-7:
Measurement Error,
Gain = 1, PF = 1.
FIGURE 2-8:
Measurement Error,
Gain = 2, PF = 1.
FIGURE 2-9:
Measurement Error,
Gain = 1, PF = + 0.5.
FIGURE 2-10:
Measurement Error,
Gain = 2, PF = + 0.5.
-0.5
-0.4
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
0.0001
0.0010
0.0100
0.1000
1.0000
CH0 Vp-p Amplitude (V)
M
easu
re
m
e
n
t E
rr
o
r
+85°C
+25°C
- 40°C
-0.5
-0.4
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
0.0001
0.0010
0.0100
0.1000
1.0000
CH0 Vp-p Amplitude (V)
M
easu
re
m
e
n
t E
rr
o
r
+85°C
+25°C
- 40°C
-0.5
-0.4
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
0.0001
0.0010
0.0100
0.1000
1.0000
CH1 Vp-p Amplitude (V)
M
easu
re
m
e
n
t E
rr
o
r
+85°C
+25°C
-40°C
-0.5
-0.4
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
0.0001
0.0010
0.0100
0.1000
1.0000
CH1 Vp-p Amplitude (V)
Me
a
s
u
re
m
e
n
t E
rro
r
+85°C
+25°C
-40°C
© 2009 Microchip Technology Inc.
DS21948E-page 9
MCP3905/06
Note: Unless otherwise specified, DV
DD
, AV
DD
= 5V; A
GND
, D
GND
= 0V; V
REF
= Internal, HPF = 1 (AC mode),
MCLK = 3.58 MHz.
FIGURE 2-11:
Measurement Error vs.
Input Frequency.
FIGURE 2-12:
Channel 0 Offset Error
(DC Mode, HPF off), G = 1.
FIGURE 2-13:
Channel 0 Offset Error
(DC Mode, HPF off), G = 8.
FIGURE 2-14:
Channel 0 Offset Error
(DC Mode, HPF Off), G = 16.
FIGURE 2-15:
Measurement Error vs. V
DD
(G = 16).
FIGURE 2-16:
Measurement Error vs. V
DD
,
G = 16, External V
REF
.
-0.5
-0.4
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
45
50
55
60
65
70
75
Frequency (Hz)
% E
rr
o
r
PF = 1.0
PF = 0.5
0
500
1000
1500
2000
2500
3000
-1
.7
5
-1
.7
0
-1
.6
5
-1
.6
1
-1
.5
6
-1
.5
2
-1
.4
7
-1
.4
3
-1
.3
8
Channel 0 Offset (mV)
Oc
c
u
ra
n
c
e
16384 Samples
Mean = -1.57 mV
Std. Dev = 52.5 µV
0
200
400
600
800
1000
1200
-1
.7
1
-1
.6
9
-1
.6
8
-1
.6
7
-1
.6
6
-1
.6
5
-1
.6
4
-1
.6
3
-1
.6
2
-1
.6
0
-1
.5
9
Channel 0 Offset (mV)
O
ccur
a
n
c
e
16384 Samples
Mean = -1.64 mV
Std. Dev = 17.4 µV
0
500
1000
1500
2000
2500
3000
3500
4000
-1
.3
8
E
-0
3
-1
.3
7
E
-0
3
-1
.3
6
E
-0
3
-1
.3
5
E
-0
3
-1
.3
4
E
-0
3
-1
.33E
-0
3
-1
.3
2
E
-0
3
-1
.31E
-0
3
-1
.30E
-0
3
-1
.29E
-0
3
-1
.28E
-0
3
-1
.27E
-0
3
-1
.26E
-0
3
-1
.25E
-03
-1
.24E
-0
3
-1
.23E
-03
-1
.22E
-03
Bin (mV)
Oc
c
u
ra
n
c
e
16384 Samples
Mean = - 1.28 mV
Std. dev = - 18.1 µV
-0.5
-0.4
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.0001
0.0010
0.0100
0.1000
1.0000
CH0 Vp-p Amplitude (V)
M
e
asu
re
ment
E
rr
o
r
V
DD
=4.75V
V
DD
=5.0V
V
DD
=4.5V
V
DD
=5.25V
V
DD
=5.5V
-0.15
-0.1
-0.05
0
0.05
0.1
0.15
0.2
0.25
0.3
0.0001
0.0010
0.0100
0.1000
1.0000
CH0 Vp-p Amplitude (V)
M
eas
u
re
m
ent E
rror
V
DD
=4.5V
V
DD
=4.75V
V
DD
=5.0V
V
DD
=5.25V
V
DD
=5.5V
MCP3905/06
DS21948E-page 10
© 2009 Microchip Technology Inc.
Note: Unless otherwise specified, DV
DD
, AV
DD
= 5V; A
GND
, D
GND
= 0V; V
REF
= Internal, HPF = 1 (AC mode),
MCLK = 3.58 MHz.
FIGURE 2-17:
Measurement Error
with External V
REF
, (G = 1).
FIGURE 2-18:
Measurement Error
with External V
REF
, (G = 8).
FIGURE 2-19:
Measurement Error
with External V
REF
(G = 16).
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.0001
0.0010
0.0100
0.1000
1.0000
CH0 Vp-p Amplitude (V)
M
e
asu
re
ment
E
rr
o
r
+85°C
+25°C
- 40°C
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.0000
0.0001
0.0010
0.0100
0.1000
CH1 Vp-p Amplitude (V)
Me
as
u
rem
e
n
t E
rr
o
r
+85°C
+25°C
-40°C
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.0000
0.0001
0.0010
0.0100
0.1000
CH1 Vp-p Amplitude (V)
M
easu
re
m
e
n
t E
rr
o
r
+85°C
+25°C
- 40°C