93AA66A/B/C Data Sheet

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/21795E-html.html
background image

 2003-2011 Microchip Technology Inc.

DS21795E-page 1

93AA66A/B/C, 93LC66A/B/C,

93C66A/B/C

Device Selection Table

Features:

• Low-Power CMOS Technology
• ORG Pin to Select Word Size for ‘66C’ Version
• 512 x 8-bit Organization ‘A’ Devices (no ORG)
• 256 x 16-bit organization ‘B’ Devices (no ORG)
• Self-tImed Erase/Write Cycles (including 

Auto-Erase)

• Automatic Erase All (ERAL) Before Write All 

(WRAL)

• Power-On/Off Data Protection Circuitry
• Industry Standard 3-Wire Serial I/O
• Device Status Signal (Ready/

Busy

)

• Sequential Read Function
• 1,000,000 Erase/Write Cycles
• Data Retention > 200 Years
• Pb-free and RoHS Compliant
• Temperature Ranges Supported:

Pin Function Table

Description:

The Microchip Technology Inc. 93XX66A/B/C devices
are 4Kbit low-voltage serial Electrically Erasable
PROMs (EEPROM). Word-selectable devices such as
the 93AA66C, 93LC66C or 93C66C are dependent
upon external logic levels driving the ORG pin to set
word size. For dedicated 8-bit communication, the
93XX66A devices are available, while the 93XX66B
devices provide dedicated 16-bit communication.
Advanced CMOS technology makes these devices
ideal for low-power, nonvolatile memory applications.
The entire 93XX Series is available in standard
packages including 8-lead PDIP and SOIC, and
advanced packaging including 8-lead MSOP, 6-lead
SOT-23, 8-lead 2x3 DFN/TDFN and 8-lead TSSOP. All
packages are Pb-free (Matte Tin) finish.

Part Number

V

CC

 Range

ORG Pin

Word Size

Temp Ranges

Packages

93AA66A

1.8-5.5

No

8-bit

I

P, SN, ST, MS, OT, MC, MN

93AA66B

1.8-5-5

No

16-bit

I

P, SN, ST, MS, OT, MC, MN

93LC66A

2.5-5.5

No

8-bit

I, E

P, SN, ST, MS, OT, MC, MN

93LC66B

2.5-5.5

No

16-bit

I, E

P, SN, ST, MS, OT, MC, MN

93C66A

4.5-5.5

No

8-bit

I, E

P, SN, ST, MS, OT, MC, MN

93C66B

4.5-5.5

No

16-bit

I, E

P, SN, ST, MS, OT, MC, MN

93AA66C

1.8-5.5

Yes

8- or 16-bit

I

P, SN, ST, MS, MC, MN

93LC66C

2.5-5.5

Yes

8- or 16-bit

I, E

P, SN, ST, MS, MC, MN

93C66C

4.5-5.5

Yes

8- or 16-bit

I, E

P, SN, ST, MS, MC, MN

- Industrial (I)

-40°C to +85°C

- Automotive (E)  -40°C to +125°C

Name

Function

CS

Chip Select

CLK

Serial Data Clock

DI

Serial Data Input

DO

Serial Data Output

V

SS

Ground

NC

No internal connection

ORG

Memory Configuration

V

CC

Power Supply

4K Microwire Compatible Serial EEPROM

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/21795E-html.html
background image

93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C

DS21795E-page 2

 2003-2011 Microchip Technology Inc.

Package Types (not to scale)

CS

CLK

DI

DO

1
2
3
4

8
7
6
5

V

CC

NC
ORG

*

V

SS

PDIP/SOIC

(P, SN)

CS

CLK

DI

DO

1
2
3
4

8
7
6
5

V

CC

NC

ORG*

V

SS

ROTATED SOIC
(ex: 93LC46BX)

TSSOP/MSOP

CS

CLK

DI

DO

1

2

3

4

8

7

6

5

V

CC

NC

ORG*

V

SS

(ST, MS)

SOT-23

DO

V

SS

DI

1
2
3

6
5
4

V

CC

CS

CLK

(OT)

*ORG pin is NC on A/B devices.

DFN/TDFN

CS

CLK

DI

DO

NC
ORG*
V

SS

V

CC

8
7
6
5

1

2

3

4

(MC, MN)

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/21795E-html.html
background image

 2003-2011 Microchip Technology Inc.

DS21795E-page 3

93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

(†)

V

CC

.............................................................................................................................................................................7.0V

All inputs and outputs w.r.t. V

SS

..........................................................................................................-0.6V to V

CC

 +1.0V

Storage temperature ...............................................................................................................................-65°C to +150°C
Ambient temperature with power applied................................................................................................-40°C to +125°C
ESD protection on all pins

  4 kV

TABLE 1-1:

DC CHARACTERISTICS

 

NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.

All parameters apply over the specified 
ranges unless otherwise noted.

Industrial (I): 

T

A

 = -40°C to +85°C, V

CC

 = +1.8V to +5.5V

Automotive (E):  T

A

 = -40°C to +125°C, V

CC

 = +2.5V to +5.5V

Param. 

No.

Symbol

Parameter

Min

Typ

Max

Units

Conditions

D1

V

IH

1

V

IH

2

High-level input voltage

2.0

0.7 V

CC


V

CC

 +1

V

CC

 +1

V
V

V

CC

 

2.7V

V

CC

 < 2.7V

D2

V

IL

1

V

IL

2

Low-level input voltage

-0.3
-0.3


0.8

0.2 V

CC

V
V

V

CC

 

2.7V

V

CC

 < 2.7V

D3

V

OL

1

V

OL

2

Low-level output voltage



0.4
0.2

V
V

I

OL

 = 2.1 mA, V

CC

 = 4.5V

I

OL

 = 100 

A, V

CC

 = 2.5V

D4

V

OH

1

V

OH

2

High-level output voltage

2.4

V

CC

 - 0.2



V
V

I

OH

 = -400 

A, V

CC

 = 4.5V

I

OH

 = -100 

A, V

CC

 = 2.5V

D5

I

LI

Input leakage current

±1

A

V

IN

 = V

SS

 or V

CC

D6

I

LO

Output leakage current

±1

A

V

OUT

 = V

SS

 or V

CC

D7

C

IN

C

OUT

Pin capacitance (all inputs/
outputs)

7

pF

V

IN

/V

OUT

 = 0V (Note 1)

T

A

 = 25°C, F

CLK

 = 1 MHz

D8

I

CC

 write Write current


500

2

mA

A

F

CLK

 = 3 MHz, Vcc = 5.5V

F

CLK

 = 2 MHz, Vcc = 2.5V

D9

I

CC

 read Read current




100

1

500

mA

A
A

F

CLK

 = 3 MHz, V

CC

 = 5.5V

F

CLK

 = 2 MHz, V

CC

 = 3.0V

F

CLK

 = 2 MHz, V

CC

 = 2.5V

D10

I

CCS

Standby current



1
5

A

A

I – Temp
E – Temp
CLK = Cs = 0V
ORG = DI = V

SS

 or V

CC

(Note 2) (Note 3)

D11

V

POR

V

CC

 voltage detect

93AA66A/B/C, 93LC66A/B/C 
93C66A/B/C


1.5V
3.8V


V
V

(Note 1)

Note 1:

This parameter is periodically sampled and not 100% tested.

2:

ORG pin not available on ‘A’ or ‘B’ versions.

3:

Ready/

Busy

 status must be cleared from DO; see Section 3.4 "Data Out (DO)".

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/21795E-html.html
background image

93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C

DS21795E-page 4

 2003-2011 Microchip Technology Inc.

TABLE 1-2:

AC CHARACTERISTICS

All parameters apply over the specified 
ranges unless otherwise noted.

Industrial (I): 

T

A

 = -40°C to +85°C, V

CC

 = +1.8V to +5.5V

Automotive (E):  T

A

 = -40°C to +125°C, V

CC

 = +2.5V to +5.5V

Param. 

No.

Symbol

Parameter

Min

Max

Units

Conditions

A1

F

CLK

Clock frequency

3
2
1

MHz
MHz
MHz

4.5V 

V

CC

 < 5.5V, 93XX66C only

2.5V 

V

CC

 < 5.5V

1.8V 

V

CC

 < 2.5V

A2

T

CKH

Clock high time

200
250
450

ns
ns
ns

4.5V 

V

CC

 < 5.5V, 93XX66C only

2.5V 

V

CC

 < 5.5V

1.8V 

V

CC

 < 2.5V

A3

T

CKL

Clock low time

100
200
450

ns
ns
ns

4.5V 

V

CC

 < 5.5V, 93XX66C only

2.5V 

V

CC

 < 5.5V

1.8V 

V

CC

 < 2.5V

A4

T

CSS

Chip Select setup time

50

100
250

ns
ns
ns

4.5V 

V

CC

 < 5.5V

2.5V 

V

CC

 < 4.5V

1.8V 

V

CC

 < 2.5V

A5

T

CSH

Chip Select hold time

0

ns

1.8V 

V

CC

 < 5.5V

A6

T

CSL

Chip Select low time

250

ns

1.8V 

V

CC

 < 5.5V

A7

T

DIS

Data input setup time

50

100
250

ns
ns
ns

4.5V 

V

CC

 < 5.5V, 93XX66C only

2.5V 

V

CC

 < 5.5V

1.8V 

V

CC

 < 2.5V

A8

T

DIH

Data input hold time

50

100
250

ns
ns
ns

4.5V 

V

CC

 < 5.5V, 93XX66C only

2.5V 

V

CC

 < 5.5V

1.8V 

V

CC

 < 2.5V

A9

T

PD

Data output delay time

200
250
400

ns
ns
ns

4.5V 

V

CC

 < 5.5V, CL = 100 pF

2.5V 

V

CC

 < 4.5V, CL = 100 pF

1.8V 

V

CC

 < 2.5V, CL = 100 pF

A10

T

CZ

Data output disable time

100
200

ns
ns

4.5V 

V

CC

 < 5.5V, (Note 1)

1.8V 

V

CC

 < 4.5V, (Note 1)

A11

T

SV

Status valid time

200
300
500

ns
ns
ns

4.5V 

V

CC

 < 5.5V, CL = 100 pF

2.5V 

V

CC

 < 4.5V, CL = 100 pF

1.8V 

V

CC

 < 2.5V, CL = 100 pF

A12

T

WC

Program cycle time

6

ms

Erase/Write mode (AA and LC 
versions)

A13

T

WC

2

ms

Erase/Write mode 
(93C versions)

A14

T

EC

6

ms

ERAL mode, 4.5V 

V

CC

 

5.5V

A15

T

WL

15

ms

WRAL mode, 4.5V 

V

CC

 

5.5V

A16

Endurance

1M

cycles 25°C, V

CC

 = 5.0V, (Note 2)

Note 1:

This parameter is periodically sampled and not 100% tested.

2:

This application is not tested but ensured by characterization. For endurance estimates in a specific 
application, please consult the Total Endurance™ Model, which may be obtained from Microchip’s web 
site at www.microchip.com.

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/21795E-html.html
background image

 2003-2011 Microchip Technology Inc.

DS21795E-page 5

93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C

FIGURE 1-1:

SYNCHRONOUS DATA TIMING

TABLE 1-3: INSTRUCTION SET FOR X16 ORGANIZATION (93XX66B OR 93XX66C WITH ORG = 1)

TABLE 1-4: INSTRUCTION SET FOR X8 ORGANIZATION (93XX66A OR 93XX66C WITH ORG = 0)

Instruction

SB

Opcode

Address

Data In

Data Out

Req. CLK Cycles

ERASE

1

11

A7 A6 A5 A4 A3 A2 A1 A0

(RDY/

BSY

)

11

ERAL

1

00

1

0

X

X

X

X

X

X

(RDY/

BSY

)

11

EWDS

1

00

0

0

X

X

X

X

X

X

High-Z

11

EWEN

1

00

1

1

X

X

X

X

X

X

High-Z

11

READ

1

10

A7 A6 A5 A4 A3 A2 A1 A0

D15 – D0

27

WRITE

1

01

A7 A6 A5 A4 A3 A2 A1 A0

D15 – D0

(RDY/

BSY

)

27

WRAL

1

00

0

1

X

X

X

X

X

X

D15 – D0

(RDY/

BSY

)

27

Instruction

SB

Opcode

Address

Data In

Data Out

Req. CLK 

Cycles

ERASE

1

11

A8 A7 A6 A5 A4 A3 A2 A1 A0

(RDY/

BSY

)

12

ERAL

1

00

1

0

X

X

X

X

X

X

X

(RDY/

BSY

)

12

EWDS

1

00

0

0

X

X

X

X

X

X

X

High-Z

12

EWEN

1

00

1

1

X

X

X

X

X

X

X

High-Z

12

READ

1

10

A8 A7 A6 A5 A4 A3 A2 A1 A0

D7 – D0

20

WRITE

1

01

A8 A7 A6 A5 A4 A3 A2 A1 A0

D7 – D0

(RDY/

BSY

)

20

WRAL

1

00

0

1

X

X

X

X

X

X

X

D7 – D0

(RDY/

BSY

)

20

CS

V

IH

V

IL

V

IH

V

IL

V

IH

V

IL

V

OH

V

OL

V

OH

V

OL

CLK

DI

DO

(Read)

DO

(Program)

T

CSS

T

DIS

T

CKH

T

CKL

T

DIH

T

PD

T

CSH

T

PD

T

CZ

Status Valid

T

SV

T

CZ

Note: T

SV

 is relative to CS.

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/21795E-html.html
background image

93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C

DS21795E-page 6

 2003-2011 Microchip Technology Inc.

2.0

FUNCTIONAL DESCRIPTION

When the ORG pin is connected to V

CC

, the (x16) orga-

nization is selected. When it is connected to ground,
the (x8) organization is selected. Instructions,
addresses and write data are clocked into the DI pin on
the rising edge of the clock (CLK). The DO pin is
normally held in a High-Z state except when reading
data from the device, or when checking the Ready/

Busy

 status during a programming operation. The

Ready/

Busy

 status can be verified during an Erase/

Write operation by polling the DO pin; DO low indicates
that programming is still in progress, while DO high
indicates the device is ready. DO will enter the High-Z
state on the falling edge of CS.

2.1

Start Condition

The Start bit is detected by the device if CS and DI are
both high with respect to the positive edge of CLK for
the first time.
Before a Start condition is detected, CS, CLK and DI
may change in any combination (except to that of a
Start condition), without resulting in any device
operation (Read, Write, Erase, EWEN, EWDS, ERAL
or WRAL). As soon as CS is high, the device is no
longer in Standby mode.
An instruction following a Start condition will only be
executed if the required opcode, address and data bits
for any particular instruction are clocked in.

2.2

Data In/Data Out (DI/DO)

It is possible to connect the Data In and Data Out pins
together. However, with this configuration it is possible
for a “bus conflict” to occur during the “dummy zero”
that precedes the read operation, if A0 is a logic high
level. Under such a condition the voltage level seen at
Data Out is undefined and will depend upon the relative
impedances of Data Out and the signal source driving
A0. The higher the current sourcing capability of A0,
the higher the voltage at the Data Out pin. In order to
limit this current, a resistor should be connected
between DI and DO.

2.3

Data Protection

All modes of operation are inhibited when V

CC

 is below

a typical voltage of 1.5V for ‘93AA’ and ‘93LC’ devices
or 3.8V for ‘93C’ devices.
The  EWEN and EWDS commands give additional
protection against accidentally programming during
normal operation.

Note:

For added protection, an EWDS command
should be performed after every write
operation.

After power-up, the device is automatically in the
EWDS mode. Therefore, an EWEN instruction must be
performed before the initial ERASE or WRITE instruction
can be executed.

Block Diagram

Note:

When preparing to transmit an instruction,
either the CLK or DI signal levels must be
at a logic low as CS is toggled active high.

Memory

Array

Data Register

Mode

Decode

Logic

Clock

Register

Address
Decoder

Address

Counter

Output

Buffer

DO

DI

ORG*

CS

CLK

V

CC

V

SS

*ORG input is not available on A/B devices

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/21795E-html.html
background image

 2003-2011 Microchip Technology Inc.

DS21795E-page 7

93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C

2.4

Erase

The ERASE instruction forces all data bits of the speci-
fied address to the logical ‘1’ state. CS is brought low
following the loading of the last address bit. This falling
edge of the CS pin initiates the self-timed program-
ming cycle, except on ‘93C’ devices where the rising
edge of CLK before the last address bit initiates the
write cycle.

The DO pin indicates the Ready/

Busy

 status of the

device if CS is brought high after a minimum of 250 ns
low (T

CSL

). DO at logical ‘0’ indicates that programming

is still in progress. DO at logical ‘1’ indicates that the
register at the specified address has been erased and
the device is ready for another instruction.

Note:

Issuing a Start bit and then taking CS low
will clear the Ready/

Busy

 status from DO.

FIGURE 2-1:

ERASE TIMING FOR 93AA AND 93LC DEVICES

FIGURE 2-2:

ERASE TIMING FOR 93C DEVICES

CS

CLK

DI

DO

T

CSL

Check Status

1

1

1

A

N

A

N

-1 A

N

-2

•••

A0

T

SV

T

CZ

Busy

Ready

High-Z

T

WC

High-Z

CS

CLK

DI

DO

T

CSL

Check Status

1

1

1

A

N

A

N

-1 A

N

-2

•••

A0

T

SV

T

CZ

Busy

Ready

High-Z

T

WC

High-Z

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/21795E-html.html
background image

93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C

DS21795E-page 8

 2003-2011 Microchip Technology Inc.

2.5

Erase All (ERAL)

The Erase All (ERAL) instruction will erase the entire
memory array to the logical ‘1’ state. The ERAL cycle
is identical to the erase cycle, except for the different
opcode. The ERAL cycle is completely self-timed and
commences at the falling edge of the CS, except on
‘93C’ devices where the rising edge of CLK before the
last data bit initiates the write cycle. Clocking of the
CLK pin is not necessary after the device has entered
the ERAL cycle. 

The DO pin indicates the Ready/

Busy

 status of the

device, if CS is brought high after a minimum of 250 ns
low (T

CSL

).

Note:

Issuing a Start bit and then taking CS low
will clear the Ready/

Busy

 status from DO.

V

CC

 must be 

 4.5V for proper operation of ERAL.

FIGURE 2-3:

ERAL TIMING FOR 93AA AND 93LC DEVICES

FIGURE 2-4:

ERAL TIMING FOR 93C DEVICES

CS

CLK

DI

DO

T

CSL

Check Status

1

0

0

1

0

x

•••

x

T

SV

T

CZ

Busy

Ready

High-Z

T

EC

High-Z

V

CC

 must be  

4.5V for proper operation of ERAL.

CS

CLK

DI

DO

T

CSL

Check Status

1

0

0

1

0

x

•••

x

T

SV

T

CZ

Busy

Ready

High-Z

T

EC

High-Z

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/21795E-html.html
background image

 2003-2011 Microchip Technology Inc.

DS21795E-page 9

93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C

2.6

Erase/Write Disable and Enable 
(EWDS/EWEN)

The 93XX66A/B/C powers up in the Erase/Write
Disable (EWDS) state. All Programming modes must be
preceded by an Erase/Write Enable (EWEN) instruction.
Once the EWEN instruction is executed, programming
remains enabled until an EWDS instruction is executed
or Vcc is removed from the device. 

To protect against accidental data disturbance, the
EWDS

 instruction can be used to disable all erase/write

functions and should follow all programming opera-
tions. Execution of a READ instruction is independent of
both the EWEN and EWDS instructions.

FIGURE 2-5:

EWDS TIMING

FIGURE 2-6:

EWEN TIMING

2.7

Read

The  READ instruction outputs the serial data of the
addressed memory location on the DO pin. A dummy
zero bit precedes the 8-bit (If ORG pin is low or A-Version
devices) or 16-bit (If ORG pin is high or B-version
devices) output string. The output data bits will toggle on

the rising edge of the CLK and are stable after the
specified time delay (T

PD

). Sequential read is possible

when CS is held high. The memory data will
automatically cycle to the next register and output
sequentially.

FIGURE 2-7:

READ TIMING

CS

CLK

DI

1

0

0

0

0

x

•••

x

T

CSL

1

x

CS

CLK

DI

0

0

1

1

x

T

CSL

•••

CS

CLK

DI

DO

1

1

0

An

•••

A0

High-Z

0

Dx

•••

D0

Dx

•••

D0

•••

Dx

D0

/var/www/html/datasheet/sites/default/files/pdfhtml_dummy/21795E-html.html
background image

93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C

DS21795E-page 10

 2003-2011 Microchip Technology Inc.

2.8

Write

The WRITE instruction is followed by 8 bits (If ORG is
low or A-version devices) or 16 bits (If ORG pin is high
or B-version devices) of data which are written into the
specified address. For 93AA66A/B/C and 93LC66A/B/C
devices, after the last data bit is clocked into DI, the
falling edge of CS initiates the self-timed auto-erase and
programming cycle. For 93C66A/B/C devices, the self-
timed auto-erase and programming cycle is initiated by
the rising edge of CLK on the last data bit.

The DO pin indicates the Ready/

Busy

 status of the

device, if CS is brought high after a minimum of 250 ns
low (T

CSL

). DO at logical ‘0’ indicates that programming

is still in progress. DO at logical ‘1’ indicates that the
register at the specified address has been written with
the data specified and the device is ready for another
instruction.

Note:

Issuing a Start bit and then taking CS low
will clear the Ready/

Busy

 status from DO.

FIGURE 2-8:

WRITE TIMING FOR 93AA AND 93LC DEVICES

FIGURE 2-9:

WRITE TIMING FOR 93C DEVICES

CS

CLK

DI

DO

1

0

1

A

N

•••

A0

Dx

•••

D0

Busy

Ready

High-Z

High-Z

T

WC

T

CSL

T

CZ

T

SV

CS

CLK

DI

DO

1

0

1

A

N

•••

A0

Dx

•••

D0

Busy

Ready

High-Z

High-Z

T

WC

T

CSL

T

CZ

T

SV

Maker
Microchip Technology Inc.
Datasheet PDF Download