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PR
OPRIET
AR
Y AND
CONFIDENTIAL
A Microchip Technology Company
©2012 Silicon Storage Technology, Inc.
DS75073B
06/12
Data Sheet
www.microchip.com
Features
• High Gain:
– Typically 30 dB gain across 2.4~2.5 GHz over tempera-
ture 0°C to +85°C
• High linear output power:
– >28 dBm P1dB
- Please refer to “Absolute Maximum Stress Ratings” on
page 6
– Meets 802.11g OFDM ACPR requirement up to 23.5
dBm
– ~3% added EVM up to 20 dBm for
54 Mbps 802.11g signal
– Meets 802.11b ACPR requirement up to 23.5 dBm
• High power-added efficiency/Low operating cur-
rent for both 802.11g/b applications
– ~34%/200 mA @ P
OUT
= 23.5 dBm for 802.11b/g
• Single-pin low I
REF
power-up/down control
– I
REF
<2 mA
• Low idle current
– ~85 mA I
CQ
for 12-contact XQFN
– ~65 mA I
CQ
for 6-contact XSON
• High-speed power-up/down
– Turn on/off time (10%- 90%) <100 ns
– Typical power-up/down delay with driver delay included
<200 ns
• Low Shut-down Current (~2 µA)
• High temperature stability
– ~1 dB gain/power variation between 0°C to +85°C
• Excellent On-chip power detection
• 20 dB dynamic range on-chip power detection
• Simple input/output matching
• Packages available
– 12-contact XQFN – 2mm x 2mm
– 6-contact XSON – 1.5mm x 1.5mm
• All non-Pb (lead-free) devices are RoHS compliant
Applications
• WLAN (IEEE 802.11b/g/n)
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP08
The SST12LP08 is a versatile power amplifier based on the highly-reliable InGaP/
GaAs HBT technology. Easily configured for linear high-power applications with
excellent power-added efficiency while operating over the 2.4- 2.5 GHz frequency
band, it typically provides 30 dB gain with 34% power-added efficiency, while
meeting 802.11b/g spectrum mask at 23.5 dBm. The SST12LP08 also features
easy board-level usage along with high-speed power-up/down control through a
single combined reference voltage pin and is offered in both 12-contact XQFN
and 6-contact XSON packages.
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PR
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AR
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©2012 Silicon Storage Technology, Inc.
DS75073B
06/12
2
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP08
Data Sheet
A Microchip Technology Company
Product Description
The SST12LP08 is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology.
The SST12LP08 can be easily configured for high-power applications with good power-added effi-
ciency while operating over the 2.4- 2.5 GHz frequency band. It typically provides 30 dB gain with 34%
power-added efficiency (PAE) @ POUT = 23.5 dBm for 802.11b/g.
The SST12LP08 has excellent linearity, typically ~3% added EVM at 20 dBm output power which is
essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 23.5 dBm.
The SST12LP08 can also be easily configured for high-efficiency operation, typically ~3% added EVM
at 18 dBm output power and 95 mA total power consumption for 54 Mbps 802.11g applications. High-
efficiency operation is desirable in embedded applications, such as in hand-held units, where
SST12LP08 can provide 30 dB gain and meet 802.11b/g spectrum mask at 22 dBm output power with
34% PAE.
The SST12LP08 also features easy board-level usage along with high-speed power-up/down control
through a single combined reference voltage pin. Ultra-low reference current (total I
REF
~2 mA) makes
the SST12LP08 controllable by an on/off switching signal directly from the baseband chip. These fea-
tures coupled with low operating current make the SST12LP08 ideal for the final stage power amplifi-
cation in battery-powered 802.11b/g/n WLAN transmitter applications.
The SST12LP08 has an excellent on-chip, single-ended power detector, which features wide-range
(>15 dB) with dB-wise linearization. The excellent on-chip power detector provides a reliable solution
to board-level power control.
The SST12LP08 is offered in both 12-contact XQFN and 6-contact XSON packages. See Figure 3 for
pin assignments and Tables 1 and 2 for pin descriptions.
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PR
OPRIET
AR
Y AND
CONFIDENTIAL
©2012 Silicon Storage Technology, Inc.
DS75073B
06/12
3
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP08
Data Sheet
A Microchip Technology Company
Functional Blocks
Figure 1: Functional Block Diagram 12-Contact XQFN (QXB)
Figure 2: Functional Block Diagram 6-Contact XSON (QX6)
12
NC
11
10
NC
VCC1
7
9
8
VCCb
VREF
DET
NC
RFOUT/VCC2
NC
NC
2
1
3
RFIN
NC
4
5
6
1399 B1.0
Bias Circuit
1399F13.0
VCC1
VCCb
VREF
RFIN
VCC2/RFOUT
DET
3
2
1
4
5
6
Bias Circuit
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©2012 Silicon Storage Technology, Inc.
DS75073B
06/12
4
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP08
Data Sheet
A Microchip Technology Company
Pin Assignments
Figure 3: Pin Assignments
12
NC
11
10
NC
VCC1
7
9
8
VCCb
VREF
DET
NC
RFOUT/VCC2
NC
NC
2
1
3
RFIN
NC
4
5
6
1399 P1.0
Top View
(Contacts
facing down)
1399 F14.1
VCC1
VCCb
VREF
RFIN
VCC2/RFOUT
DET
3
2
1
4
5
6
Top View
RF & DC
Ground
0
(Contacts facing
down)
12-Contact XQFN
6-Contact XSON
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©2012 Silicon Storage Technology, Inc.
DS75073B
06/12
5
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP08
Data Sheet
A Microchip Technology Company
Pin Descriptions
Table 1: Pin Description for12-Contact XQFN (QXB)
Symbol
Pin No.
Pin Name
Type
1
1. I=Input, O=Output
Function
GND
0
Ground
Low-inductance GND pad
NC
1
No Connection
Unconnected pin
RFIN
2
I
RF input, DC decoupled
NC
3
No Connection
Unconnected pin
VCCb
4
Power Supply
PWR
Supply voltage for bias circuit
VREF
5
PWR
1
st
and 2
nd
stage idle current control
DET
6
O
On-chip power detector
NC
7
No Connection
Unconnected pin
VCC2/
RFOUT
8
Power Supply
PWR/O
Power Supply, 2
nd
stage / RF output
NC
9
No Connection
Unconnected pin
NC
10
No Connection
Unconnected pin
VCC1
11
Power Supply
PWR
Power supply, 1
st
stage
NC
12
No Connection
Unconnected pin
T1.0 75073
Table 2: Pin Description, 6-contact XSON (QX6)
Symbol
Pin No.
Pin Name
Type
1
1. I=Input, O=Output
Function
GND
0
Ground
Low inductance GND pad
V
CC1
1
Power Supply
PWR
Power supply, 1
st
stage
RF
IN
2
I
RF input, DC decoupled
V
CCb
3
Power Supply
PWR
Supply voltage for bias circuit
VREF
4
PWR
1
st
and 2
nd
stage idle current control
Det
5
O
On-chip power detector
V
CC2
/ RFOUT
6
Power Supply
PWR/O
Power supply, 2
nd
stage/ RF Output
T2.0 75073
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PR
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©2012 Silicon Storage Technology, Inc.
DS75073B
06/12
6
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP08
Data Sheet
A Microchip Technology Company
Electrical Specifications
The AC and DC specifications for the power amplifier interface signals. Refer to Table 4 for the DC voltage and
current specifications. Refer to Figures 4 through 11 for the RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Input power to pin 2 (P
IN
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm
Average output power (P
OUT
)
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +26 dBm
1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the max-
imum rating of average output power could cause permanent damage to the device.
Supply Voltage at pins 4, 8, and 11 (V
CC
) for 12-contact XQFN . . . . . . . . . . . . . . . . . . -0.3V to +5.0V
Supply Voltage at pins 1, 3, and 6 (V
CC
) for 6-contact XSON . . . . . . . . . . . . . . . . . . . . -0.3V to +5.0V
Reference voltage to pin 5 (V
REF
) or 12-contact XQFN. . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.3V
Reference voltage to pin 4 (V
REF
) for 6-contact XSON . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.3V
DC supply current (I
CC
)
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mA
2. Measured with 100% duty cycle 54 Mbps 802.11g OFDM Signal
Operating Temperature (T
A
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC
Storage Temperature (T
STG
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (T
J
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Table 3: Operating Range
Range
Ambient Temp
V
CC
Industrial
-40°C to +85°C
3.3V
T3.0 75073
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PR
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©2012 Silicon Storage Technology, Inc.
DS75073B
06/12
7
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP08
Data Sheet
A Microchip Technology Company
Table 4: DC Electrical Characteristics at 25°C
Symbol
Parameter
Min.
Typ
Max.
Unit
Test Conditions
V
CC
Supply Voltage at pins 4, 8, 11 for 12-contact XQFN
2.75
3.3
4.2
V
Figure 12
Supply Voltage at pins 1, 3, 6 for 6-contact XSON
2.75
3.3
4.2
V
Figures13and14
I
CQ
Idle current for 802.11g to meet EVM ~3% @ 20 dBm for
12-contact XQFN
85
mA
Figure 12
Idle current for 802.11g to meet EVM ~3% @ 20 dBm for
6-contact XSON
65
mA
Figure 13
Idle current for 802.11g to meet EVM ~3% @ 18 dBm for
6-contact XSON
48
mA
Figure 14
I
CC
(802.11g)
Current consumption for 802.11g to meet EVM ~3% @
20 dBm for 12-contact XQFN
148
mA
Figure 12
Current consumption for 802.11g to meet EVM ~3% @
20 dBm for 6-contact XSON
140
mA
Figure 13
Current Consumption for 802.11g to meet EVM ~3% @
18 dBm for 6-contact XSON
95
mA
Figure 14
I
CC
(802.11b/g)
Current consumption for 802.11b/g, 23.5 dBm for
12-contact XQFN
200
mA
Figure 12
Current consumption for 802.11b/g, 23.5 dBm for
6-contact XSON
200
mA
Figure 13
Current Consumption for 802.11b/g, 22 dBm for
6-contact XSON
140
mA
Figure 14
V
REG
Reference Voltage for 12-contact XQFN with 75
resistor 2.75
2.85
2.95
V
Figure 12
Reference Voltage for 6-contact XSON with 180
resistor
2.75
2.85
2.95
V
Figure 13
Reference Voltage for 6-contact XSON with 390
resistor
2.75
2.85
2.95
V
Figure 14
T4.2 75073
Table 5: AC Electrical Characteristics for Configuration at 25°C
Symbol
Parameter
Min.
Typ
Max.
Unit
F
L-U
Frequency range
2412
2484
MHz
G
Small signal gain
29
30
dB
G
VAR1
Gain variation over band (2412–2484 MHz)
±0.5
dB
G
VAR2
Gain ripple over channel (20 MHz)
0.2
dB
ACPR
Meet 11b spectrum mask
23
dBm
Meet 11g OFDM 54 Mbps spectrum mask
23
dBm
Added EVM @ 20 dBm output with 11g OFDM 54 Mbps signal
3
%
2f, 3f, 4f, 5f
Harmonics at 22 dBm, without external filters
-40
dBc
T5.2 75073
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©2012 Silicon Storage Technology, Inc.
DS75073B
06/12
8
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP08
Data Sheet
A Microchip Technology Company
Typical Performance Characteristics
Test Conditions: V
CC
= 3.3V, T
A
= 25°C, unless otherwise noted
Figure 4: S-Parameters
S11 versus Frequency
-30
-25
-20
-15
-10
-5
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
Frequency (GHz)
S11
(dB)
Frequency (GHz)
S21
(dB)
S22
(dB)
Frequency (GHz)
S12
(dB)
Frequency (GHz)
1399 S-Parms.1.1
S12 versus Frequency
-80
-70
-60
-50
-40
-30
-20
-10
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
S21 versus Frequency
-40
-30
-20
-10
0
10
20
30
40
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
S22 versus Frequency
-30
-25
-20
-15
-10
-5
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
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©2012 Silicon Storage Technology, Inc.
DS75073B
06/12
9
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP08
Data Sheet
A Microchip Technology Company
Typical Performance Characteristics
Test Conditions: V
CC
= 3.3V, T
A
= 25°C, 54 Mbps 802.11g OFDM Signal, equalizer
training using sequence plus data
Figure 5: EVM versus Output Power measured with “sequence plus data” channel estimation
Figure 6: Power Gain versus Output Power
1391 F4.1
EVM versus Output Power
0
1
2
3
4
5
6
7
8
9
10
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Output Power (dBm)
EVM (%)
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.472 GHz
1391 F5.1
Power Gain versus Output Power
20
22
24
26
28
30
32
34
36
38
40
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Output Power (dBm)
Power Gain (dB)
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.472 GHz
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©2012 Silicon Storage Technology, Inc.
DS75073B
06/12
10
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP08
Data Sheet
A Microchip Technology Company
Figure 7: Total Current Consumption for 802.11g operation versus Output Power
Figure 8: PAE versus Output Power
1391 F6.1
Supply Current versus Output Power
Output Power (dBm)
Supply Current (mA)
80
90
100
110
120
130
140
150
160
170
180
190
200
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.472 GHz
1391 F7.1
PAE versus Output Power
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Output Power (dBm)
PAE (%)
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.472 GHz