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PR
OPRIET
AR
Y AND
CONFIDENTIAL
A Microchip Technology Company
©2012 Silicon Storage Technology, Inc.
DS75055A
07/12
Data Sheet
www.microchip.com
Features
• High Gain:
– Typically 29 dB gain across 2.4~2.5 GHz over tempera-
ture -40°C to +85°C
• High linear output power:
– >28 dBm P1dB
- Please refer to “Absolute Maximum Stress Ratings” on
page 5
– Meets 802.11g OFDM ACPR requirement up to 24 dBm
– ~3% added EVM up to 20 dBm for
54 Mbps 802.11g signal
– Meets 802.11b ACPR requirement up to 23.5 dBm
• High power-added efficiency/Low operating cur-
rent for both 802.11g/b applications
– ~34%/220 mA @ P
OUT
= 24 dBm for 802.11g
– ~31%/215 mA @ P
OUT
= 23.5 dBm for 802.11b
• Single-pin low I
REF
power-up/down control
– I
REF
<2 mA
• Low idle current
– ~78 mA I
CQ
• High-speed power-up/down
– Turn on/off time (10%- 90%) <100 ns
– Typical power-up/down delay with driver delay included
<200 ns
• Low Shut-down Current (~2 µA)
• High temperature stability
– ~1 dB gain/power variation between -40°C to +85°C
• Excellent On-chip power detection
• 20 dB dynamic range on-chip power detection
• Simple input/output matching
• Packages available
– 8-contact XSON – 2mm x 2mm
• All non-Pb (lead-free) devices are RoHS compliant
Applications
• WLAN (IEEE 802.11b/g/n)
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP08A
The SST12LP08A is a versatile power amplifier based on the highly-reliable
InGaP/GaAs HBT technology. Easily configured for high-power applications with
good power-added efficiency while operating over the 2.4- 2.5 GHz frequency
band, it typically provides 29 dB gain with 34% power-added efficiency. The
SST12LP08A has excellent linearity while meeting 802.11g spectrum mask at 24
dBm. The SST12LP08A also features easy board-level usage along with high-
speed power-up/down control through a single combined reference voltage pin
and is offered in an 8-contact XSON package.
![background image](/sites/default/files/pdfhtml_microchip/75055A002.png)
PR
OPRIET
AR
Y AND
CONFIDENTIAL
©2012 Silicon Storage Technology, Inc.
DS75055A
07/12
2
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP08A
Data Sheet
A Microchip Technology Company
Product Description
The SST12LP08A is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT tech-
nology.
The SST12LP08A can be easily configured for high-power applications with good power-added effi-
ciency while operating over the 2.4- 2.5 GHz frequency band. It typically provides 29 dB gain with 34%
power-added efficiency (PAE) @ POUT = 24 dBm for 802.11g and 31% PAE @ POUT = 23.5 dBm for
802.11b
The SST12LP08A has excellent linearity, typically ~3% added EVM at 20 dBm output power which is
essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 24 dBm.
The SST12LP08A also features easy board-level usage along with high-speed power-up/down control
through a single combined reference voltage pin. Ultra-low reference current (total I
REF
~2 mA) makes
the SST12LP08A controllable by an on/off switching signal directly from the baseband chip. These fea-
tures, coupled with low operating current, make the SST12LP08A ideal for the final stage power ampli-
fication in battery-powered 802.11b/g/n WLAN transmitter applications.
The SST12LP08A has an excellent on-chip, single-ended power detector, which features wide-range
(>15 dB) with dB-wise linearization. The excellent on-chip power detector provides a reliable solution
to board-level power control.
The SST12LP08A is offered in 8-contact XSON package. See Figure 2 for pin assignments and Table 1
for pin descriptions.
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PR
OPRIET
AR
Y AND
CONFIDENTIAL
©2012 Silicon Storage Technology, Inc.
DS75055A
07/12
3
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP08A
Data Sheet
A Microchip Technology Company
Functional Blocks
Figure 1: Functional Block Diagram
4
3
2
1
5
6
7
8
Bias Circuit
VCC1
VCCb
VREF
RFIN
RFOUT
RFOUT
VCC2
1369 F1.0
DET
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PR
OPRIET
AR
Y AND
CONFIDENTIAL
©2012 Silicon Storage Technology, Inc.
DS75055A
07/12
4
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP08A
Data Sheet
A Microchip Technology Company
Pin Assignments
Figure 2: Pin Assignments for 8-contact XSON
Pin Descriptions
Table 1: Pin Description
Symbol
Pin No.
Pin Name
Type
1
1. I=Input, O=Output
Function
GND
0
Ground
Low inductance GND pad
V
CC1
1
Power Supply
PWR
Power supply, 1
st
stage
RF
IN
2
I
RF input, DC decoupled
V
CCb
3
Power Supply
PWR
Supply voltage for bias circuit
VREF
4
PWR
1
st
and 2
nd
stage idle current control
Det
5
O
On-chip power detector
RFOUT
6
O
RF output
RFOUT
7
O
RF output
V
CC2
8
Power Supply
PWR
Power supply, 2
nd
stage
T1.0 75055
4
3
2
1
5
6
7
8
VCC1
VCCb
VREF
RFIN
RFOUT
RFOUT
VCC2
Top View
RF & DC
Ground
0
(Contacts
facing down)
DET
1404 F2.0
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PR
OPRIET
AR
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©2012 Silicon Storage Technology, Inc.
DS75055A
07/12
5
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP08A
Data Sheet
A Microchip Technology Company
Electrical Specifications
The AC and DC specifications for the power amplifier interface signals. Refer to Table 3 for the DC voltage and
current specifications. Refer to Figures 3 through 10 for the RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Input power to pin 2 (P
IN
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm
Average output power (P
OUT
)
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +26 dBm
1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the max-
imum rating of average output power could cause permanent damage to the device.
Supply Voltage at pins 1, 3, and 8(V
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.6V
Reference voltage to pin 4 (V
REF
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.3V
DC supply current (I
CC
)
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mA
2. Measured with 100% duty cycle 54 Mbps 802.11g OFDM Signal
Operating Temperature (T
A
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC
Storage Temperature (T
STG
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (T
J
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Table 2: Operating Range
Range
Ambient Temp
V
CC
Industrial
-40°C to +85°C
3.3V
T2.1 75055
Table 3: DC Electrical Characteristics at 25°C
Symbol
Parameter
Min.
Typ
Max.
Unit
Test
Conditions
V
CC
Supply Voltage at pins 1,3,and 8
3.0
3.3
4.2
V
I
CC
Supply Current
for 802.11g, 24 dBm
220
mA
for 802.11b, 23.5 dBm
215
mA
I
CQ
Idle current for 802.11g to meet EVM ~3% @ 20 dBm
78
mA
V
REG
Reference Voltage with 130
resistor
2.75
2.85
2.95
V
T3.1 75055
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PR
OPRIET
AR
Y AND
CONFIDENTIAL
©2012 Silicon Storage Technology, Inc.
DS75055A
07/12
6
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP08A
Data Sheet
A Microchip Technology Company
Table 4: AC Electrical Characteristics for Configuration at 25°C
Symbol
Parameter
Min.
Typ
Max.
Unit
F
L-U
Frequency range
2412
2484
MHz
G
Small signal gain
28
29
dB
G
VAR1
Gain variation over band (2412–2484 MHz)
±0.5
dB
G
VAR2
Gain ripple over channel (20 MHz)
0.2
dB
ACPR
Meet 11b spectrum mask
23
dBm
Meet 11g OFDM 54 Mbps spectrum mask
23.5
dBm
Added EVM @ 20 dBm output with 11g OFDM 54 Mbps signal
2.5
3
%
2f, 3f, 4f, 5f
Harmonics at 22 dBm, without external filters
-40
dBc
T4.2 75055
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PR
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AR
Y AND
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©2012 Silicon Storage Technology, Inc.
DS75055A
07/12
7
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP08A
Data Sheet
A Microchip Technology Company
Typical Performance Characteristics
Test Conditions: V
CC
= 3.3V, T
A
= 25°C, unless otherwise specified
Figure 3: S-Parameters
S11 versus Frequency
-30
-25
-20
-15
-10
-5
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
Frequency (GHz)
S11
(dB)
Frequency (GHz)
S21
(dB)
S22
(dB)
Frequency (GHz)
S12
(dB)
Frequency (GHz)
1404 S-Parms.1.1
S12 versus Frequency
-80
-70
-60
-50
-40
-30
-20
-10
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
S21 versus Frequency
-40
-30
-20
-10
0
10
20
30
40
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
S22 versus Frequency
-30
-25
-20
-15
-10
-5
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
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PR
OPRIET
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Y AND
CONFIDENTIAL
©2012 Silicon Storage Technology, Inc.
DS75055A
07/12
8
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP08A
Data Sheet
A Microchip Technology Company
Typical Performance Characteristics
Test Conditions: V
CC
= 3.3V, T
A
= 25°C, 54 Mbps 802.11g OFDM signal
Figure 4: EVM versus Output Power measured with Data plus Sequence equalizer training
Figure 5: Power Gain versus Output Power
1404 F4.0
EVM versus Output Power
0
1
2
3
4
5
6
7
8
9
10
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Output Power (dBm)
EVM (%)
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.472 GHz
1404 F5.0
Power Gain versus Output Power
20
22
24
26
28
30
32
34
36
38
40
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Output Power (dBm)
Power Gain (dB)
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.472 GHz
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PR
OPRIET
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©2012 Silicon Storage Technology, Inc.
DS75055A
07/12
9
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP08A
Data Sheet
A Microchip Technology Company
Figure 6: Total Current Consumption for 802.11g operation versus Output Power
Figure 7: PAE versus Output Power
1404 F6.0
Supply Current versus Output Power
70
80
90
100
110
120
130
140
150
160
170
180
190
200
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Output Power (dBm)
Supply Current (mA)
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.472 GHz
1404 F7.0
PAE versus Output Power
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Output Power (dBm)
PAE (%)
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.472 GHz
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PR
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AR
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©2012 Silicon Storage Technology, Inc.
DS75055A
07/12
10
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP08A
Data Sheet
A Microchip Technology Company
Figure 8: Detector Characteristics versus Output Power
Figure 9: 802.11g Spectrum Mask at 24 dBm, Total Current 220 mA
1404 F8.1
Detector Voltage versus Output Power
Detector Voltage (V)
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power (dBm)
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.472 GHz
-70
-60
-50
-40
-30
-20
-10
0
10
2.3 5
2.4 0
2.45
2.50
2.55
Freq = 2.412 GHZ
Freq = 2.442 GHz
Freq = 2.472 GHz
Frequency (GHz)
1404 F9.0
Amplitude
(dB)