A Microchip Technology Company
©2012 Silicon Storage Technology, Inc.
DS75047A
01/12
Data Sheet
www.microchip.com
Features
• High gain
• High linear output power:
– Meets 802.11a OFDM Spectrum Mask requirements up
to 24 dBm over the entire band
– Added EVM <3% up to 20 dBm for 54 Mbps 802.11a
signal
– Meets 802.11n HT40 Spectrum Mask requirements typ-
ically up to 20 dBm
• High power-added efficiency/Low operating cur-
rent for 6 Mbps 802.11a applications
– ~17% @ P
OUT
= 23 dBm for 6 Mbps
• Built-in Ultra-low I
REF
power-up/down control
– I
REF
<3 mA
• Low idle current
– ~150 mA I
CQ
• High speed power up/down
– Turn on/off time (10%~90%) <100 ns
– Typical power-up/down delay with driver delay included
<200 ns
• High temperature stability
• Low shut-down current (~2 µA)
• On-chip power detection
• 20 dB dynamic range on-chip power detection
• Simple input/output matching
• Packages available
– 16-contact WQFN (3mm x 3mm)
– Non-Pb (lead-free) packages available
Applications
• WLAN (IEEE 802.11a/n)
• Japan WLAN
• HyperLAN2
• Multimedia
4.9-5.9 GHz High-Linearity Power Amplifier
SST11LP12
SST11LP12 is a high-power, high-gain power amplifier based on the highly-reli-
able InGaP/GaAs HBT technology. It is configured for high-power, high-efficiency
applications with high power-added efficiency while operating over the entire
802.11a frequency band for U.S., European, and Japanese markets (4.9-5.9
GHz). The power amplifier IC features easy board-level usage along with high-
speed power-up/down control and is offered in a 16-contact WQFN package
©2012 Silicon Storage Technology, Inc.
DS75047A
01/12
2
4.9-5.9 GHz High-Linearity Power Amplifier
SST11LP12
Data Sheet
A Microchip Technology Company
Product Description
SST11LP12 is a high-power, high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT
technology.
The SST11LP12 can be easily configured for high-power, high-efficiency applications with superb
power-added efficiency while operating over the entire 802.11a frequency band for U.S., European,
and Japanese markets (4.9-5.9 GHz).
The SST11LP12 has excellent linearity, typically <3% added EVM at 20 dBm output power which is essential for
54 Mbps 802.11a operation while meeting 802.11a spectrum mask at 24 dBm. SST11LP12 also has wide-
range (>20 dB), temperature-stable (~1 dB over 85°C), single-ended/differential power detectors which lower
users’ cost on power control.
The power amplifier IC also features easy board-level usage along with high-speed power-up/down control.
Ultra-low reference current (total I
REF
<3 mA) makes the SST11LP12 controllable by an on/off switching signal
directly from the baseband chip. These features coupled with low operating current make the SST11LP12 ideal
for the final stage power amplification in battery-powered 802.11a WLAN transmitter and access point applica-
tions.
The SST11LP12 is offered in 16-contact WQFN package. See Figure 2 for pin assignments and Table 1 for pin
descriptions.
©2012 Silicon Storage Technology, Inc.
DS75047A
01/12
3
4.9-5.9 GHz High-Linearity Power Amplifier
SST11LP12
Data Sheet
A Microchip Technology Company
Functional Blocks
Figure 1: Functional Block Diagram
2
5
6
8
16
VCC1
15
1
14
VCC3
VCC2
4
9
11
12
10
13
NC
NC
VREF
VREF
Det_ref
NC
RFOUT
RFOUT
Det
NC
3
RFIN
RFIN
VCCb
Bias Circuit
7
1278 B1.1
©2012 Silicon Storage Technology, Inc.
DS75047A
01/12
4
4.9-5.9 GHz High-Linearity Power Amplifier
SST11LP12
Data Sheet
A Microchip Technology Company
Pin Assignments
Figure 2: Pin Assignments for 16-contact WQFN
Pin Descriptions
Table 1: Pin Description
Symbol Pin No. Pin Name
Type
1
1. I=Input, O=Output
Function
GND
0
Ground
The center pad should be connected to RF ground with several low
inductance, low resistance vias.
NC
1
No Connection
Unconnected pin
RFIN
2
I
RF input, DC decoupled
RFIN
3
I
RF input, DC decoupled
VCCb
4
Power Supply
PWR
Supply voltage for bias circuit
NC
5
No Connection
Unconnected pin
VREF
6
PWR
Current Control
VREF
7
PWR
Current Control
Det_ref
8
O
On-chip power detector reference
Det
9
O
On-chip power detector
RFOUT
10
O
RF output
RFOUT
11
O
RF output
NC
12
No Connection
Unconnected pin
NC
13
No Connection
Unconnected pin
VCC3
14
Power Supply
PWR
Power supply, 3rd stage
VCC2
15
Power Supply
PWR
Power supply, 2nd stage
VCC1
16
Power Supply
PWR
Power supply, 1st stage
T1.1 75047
5
6
8
16
VCC1
15
14
VCC3
VCC2
9
11
12
10
13
NC
NC
RFOUT
RFOUT
Det
2
1
4
3
NC
RFIN
RFIN
VCCb
7
1278 16-wqfn P1.0
Top View
(contacts facing down)
RF and DC GND
0
NC
VREF
VREF
Det_ref
©2012 Silicon Storage Technology, Inc.
DS75047A
01/12
5
4.9-5.9 GHz High-Linearity Power Amplifier
SST11LP12
Data Sheet
A Microchip Technology Company
Electrical Specifications
The AC and DC specifications for the power amplifier interface signals. Refer to Table 3 for the DC voltage and
current specifications. Refer to Figures 3 through 8 for the RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Supply Voltage at pins 4, 14, 15, 16 (V
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.8V
DC supply current (I
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA
Operating Temperature (T
A
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC
Storage Temperature (T
STG
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (T
J
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Table 2: Operating Range
Range
Ambient Temp
V
CC
Industrial
-40°C to +85°C
2.7V to 4.2V
T2.1 75047
Table 3: DC Electrical Characteristics
Symbol
Parameter
Min.
Typ
Max.
Unit
Test Conditions
V
CC
Supply Voltage at pins 4, 14, 15, 16
2.7
3.3
4.2
V
I
CC
Supply Current @ P
OUT
= 23 dBm at V
CC
= 3.3V
400
mA
I
CQ
V
CC
quiescent current
150
mA
I
OFF
Shut down current
<1.
0
µA
V
REG
Reference Voltage for recommended application
2.95
3.1
V
T3.0 75047
©2012 Silicon Storage Technology, Inc.
DS75047A
01/12
6
4.9-5.9 GHz High-Linearity Power Amplifier
SST11LP12
Data Sheet
A Microchip Technology Company
Table 4: AC Electrical Characteristics for Configuration
1,2
Symbol
Parameter
Min
Typ
Max
Unit
F
L-U
Frequency range
4.9
5.9
GHz
Linearity
Output power with <3% EVM at
54 Mbps OFDM signal when operating at 3.3V V
CC
20
dBm
Output power level with 802.11a mask compliance
across 4.9-5.8 GHz
23
dBm
Output power level with 802.11n, HT40 mask com-
pliance across 4.9-5.8 GHz
20
dBm
G
Gain over band (4.9-5.1 MHz)
33
dB
Gain over band (5.3-5.5 MHz)
31
dB
Gain over band (5.7-5.8 MHz)
27
dB
Det
Power detector output voltage range
0.5
2.0
V
Det_ref
Power detector output reference
0.5
0.6
V
2f, 3f, 4f, 5f
Harmonics at 22 dBm, without trapping capacitors
-50
dBc
T4.1 75047
1. Performance is only valid using the recommended schematic. V
CC
= 3.3V, V
REG
= 2.95, Temperature = 25ºC
2. EVM is measured with Equalizer Channel Estimation set to “sequence only.”
©2012 Silicon Storage Technology, Inc.
DS75047A
01/12
7
4.9-5.9 GHz High-Linearity Power Amplifier
SST11LP12
Data Sheet
A Microchip Technology Company
Typical Performance Characteristics
Test Conditions: V
CC
= 3.3V, T
A
= 25°C, V
REG1,2
= 2.95V unless otherwise noted
Figure 3: S-Parameters
1278 S-Parms.0.1
-
40
-
35
-
30
-
25
-
20
-
15
-
10
-5
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0
S11
(dB)
Frequency (GHz)
S11 versus Frequency
-80
-70
-60
-50
-40
-30
-20
-10
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0
S12
(dB)
Frequency (GHz)
S12 versus Frequency
-40
-30
-20
-10
0
10
20
30
40
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0
S21
(dB)
Frequency (GHz)
S21 versus Frequency
-40
-35
-30
-25
-20
-15
-10
-5
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0
S22
(dB)
Frequency (GHz)
S22 versus Frequency
©2012 Silicon Storage Technology, Inc.
DS75047A
01/12
8
4.9-5.9 GHz High-Linearity Power Amplifier
SST11LP12
Data Sheet
A Microchip Technology Company
Typical Performance Characteristics
Test Conditions: V
CC
= 3.3V, T
A
= 25°C, V
REG
= 2.95V unless otherwise specified
EVM for 54 Mbps operation
Figure 4: EVM versus Output Power, measured with Equalizer Channel Estimation set to
“sequence only”
Figure 5: Power Supply Current versus Output Power
1278 F4.2
0
1
2
3
4
5
6
7
8
9
10
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
EVM
(
)
Output Power (dBm)
EVM versus Output Power
4.920 GHz
5.180 GHz
5.500 GHz
5.850 GHz
1278 F5.3
150
160
170
180
190
200
210
220
230
240
250
260
270
280
290
300
310
320
330
340
350
360
370
380
390
400
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Supply
Current
(mA)
Output Power (dBm)
Supply Current versus Output Power
4.920 GHz
5.180 GHz
5.500 GHz
5.850 GHz
©2012 Silicon Storage Technology, Inc.
DS75047A
01/12
9
4.9-5.9 GHz High-Linearity Power Amplifier
SST11LP12
Data Sheet
A Microchip Technology Company
Figure 6: Detector Voltage versus Output Power
Figure 7: Power Gain versus Output Power
1278 F6.3
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Detector
Voltage
(V)
Output Power (dBm)
Detector Voltage versus Output Power
4.920 GHz
5.500 GHz
5.500 GHz
5.850 GHz
1278 F7.3
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Power
Gain
(dB)
Output Power (dBm)
Power Gain versus Output Power
4.920 GHz
5.180 GHz
5.500 GHz
5.850 GHz
©2012 Silicon Storage Technology, Inc.
DS75047A
01/12
10
4.9-5.9 GHz High-Linearity Power Amplifier
SST11LP12
Data Sheet
A Microchip Technology Company
Figure 8: PAE versus Output Power
Table 5: 802.11a 6Mbps OFDM Mask Compliance Power
Frequency (GHz)
802.11a 6Mbps OFDM Mask Compliance Power (dBm)
4.920
24
5.180
23.8
5.500
23.5
5.805
23
T5.0 75047
1278 F9.1
0
1
2
3
4
5
6
7
8
9
10
11
12
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
PAE
(
)
Output Power (dBm)
PAE versus Output Power
4.920 GHz
5.180 GHz
5.500 GHz
5.500 GHz