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A Microchip Technology Company
©2012 Silicon Storage Technology, Inc.
DS75037B
06/12
Data Sheet
www.microchip.com
Features
• Excellent RF Stability with Moderate Gain:
– Typically 23.5 dB gain across 2.4 – 2.5 GHz
• High Linear Output Power:
– >24 dBm P1dB
- Please refer to “Absolute Maximum Stress Ratings” on
page 6
– Meets 802.11g OFDM ACPR requirement up to 22 dBm
– ~2.5% added EVM up to 18 dBm for
54 Mbps 802.11g signal
– Meets 802.11b ACPR requirement up to 22 dBm
• High Power-added Efficiency/Low Operating Cur-
rent for 802.11b/g/n Applications
– ~33%/145 mA @ P
OUT
= 22 dBm for 802.11g
• Single-pin Low I
REF
Power-up/-down Control
– I
REF
<2 mA
• Low Idle Current
– ~45 mA I
CQ
• High-speed Power-up/-down
– Turn on/off time (10%- 90%) <100 ns
– Typical power-up/down delay <200 ns
• High Temperature Stability
– 2 dB gain variation between -40°C to +85°C
– 1 dB power variation between 0°C to +85°C
• Low Shut-down Current: <2.5 µA (typical)
• Excellent On-chip Power Detection
– <+/- 0.3dB variation between 0°C to +85°C
– <+/- 0.4dB variation with 2:1 VSWR mismatch
– <+/- 0.3dB variation Ch1 through Ch14
• Greater than 15 dB Dynamic Range On-chip Power
Detection
• Simple input/output matching
• Packages Available
– 6-contact XSON – 1.5mm x 1.5mm
– 8-contact XSON – 2mm x 2mm
• All Non-Pb (lead-free) Devices are RoHS Compliant
Applications
• WLAN (IEEE 802.11b/g/n)
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
2.4 GHz High-Efficiency Amplifier
SST12LP14E
SST12LP14E is a high-efficiency, ultra-compact power amplifier (PA) based on
the highly-reliable InGaP/GaAs HBT technology. Designed to operate over the 2.4
- 2.5 GHz frequency band, SST12LP14E typically provides 23.5 dB gain with 32%
power-added efficiency.This power amplifier has excellent linearity while meeting
802.11g spectrum mask requirements up to 22 dBm. The device typically con-
sumes only 95 mA total current at 18 dBm output power, with linear 54 Mbps
802.11g modulation. This efficiency is desirable in embedded applications such as
in hand-held units. The SST12LP14E also features easy, board-level usage along
with high-speed power-up/-down control through a single combined reference
voltage pin and is offered in both 6- and 8-contact XSON packages.
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2
2.4 GHz High-Efficiency Power Amplifier
SST12LP14E
Data Sheet
A Microchip Technology Company
Product Description
SST12LP14E is a high-efficiency, ultra-compact power amplifier (PA) based on the highly-reliable
InGaP/GaAs HBT technology.
Designed to operate over the 2.4 – 2.5 GHz frequency band, SST12LP14E typically provides 23.5 dB
gain with 33% power-added efficiency (PAE) @ P
OUT
= 22 dBm for 802.11g.
This power amplifier has excellent linearity, typically ~2.5% added EVM at 18 dBm output power, which
is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask requirements up to
22 dBm. Due to its high efficiency, the device typically consumes only 95 mA total current at 18 dBm
output power, with linear 54 Mbps 802.11g modulation. This efficiency is desirable in embedded appli-
cations such as in hand-held units.
The SST12LP14E also features easy, board-level usage along with high-speed power-up/-down control
through a single combined reference voltage pin. Ultra-low reference current (total I
REF
~2 mA) makes
the SST12LP14E controllable by an on/off switching signal directly from the baseband chip. These fea-
tures, coupled with low operating current, make the SST12LP14E ideal for the final stage power ampli-
fication in battery-powered 802.11b/g/n WLAN transmitter applications.
The SST12LP14E has an excellent on-chip, single-ended power detector, which features a >15 dB
range good linearity and high stability over temperature (< +/-0.3 dB 0°C to +85°C), frequency (<+/-0.3
dB across Channels 1 through 14), and output load (<+/-0.4 dB with 2:1 output VSWR all phases). The
excellent on-chip power detector provides a reliable solution to board-level power control.
The SST12LP14E is offered in both 6- and 8-contact XSON packages. See Figure 3 for pin assign-
ments and Tables 1 and 2 for pin descriptions.
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DS75037B
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2.4 GHz High-Efficiency Power Amplifier
SST12LP14E
Data Sheet
A Microchip Technology Company
Functional Blocks
Figure 1: Functional Block Diagram, 6-contact XSON (QX6)
Figure 2: Functional Block Diagram, 8-contact XSON (QX8)
1369 F13.0
VCC1
VCCb
VREF
RFIN
VCC2/RFOUT
DET
3
2
1
4
5
6
Bias Circuit
4
3
2
1
5
6
7
8
Bias Circuit
VCC1
VCCb
VREF
RFIN
RFOUT
RFOUT
VCC2
1369 F1.0
DET
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©2012 Silicon Storage Technology, Inc.
DS75037B
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2.4 GHz High-Efficiency Power Amplifier
SST12LP14E
Data Sheet
A Microchip Technology Company
Pin Assignments
Figure 3: Pin Assignments
4
3
2
1
5
6
7
8
VCC1
VCCb
VREF
RFIN
RFOUT
RFOUT
VCC2
Top View
RF & DC
Ground
0
(Contacts
facing down)
DET
1369 F2.1
1369 F14.1
VCC1
VCCb
VREF
RFIN
VCC2/RFOUT
DET
3
2
1
4
5
6
Top View
RF & DC
Ground
0
(Contacts facing
down)
8-Contact XSON
6-Contact XSON
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2.4 GHz High-Efficiency Power Amplifier
SST12LP14E
Data Sheet
A Microchip Technology Company
Pin Descriptions
Table 1: Pin Description, 6-contact XSON (QX6)
Symbol
Pin No.
Pin Name
Type
1
1. I=Input, O=Output
Function
GND
0
Ground
Low inductance GND pad
V
CC1
1
Power Supply
PWR
Power supply, 1
st
stage
RF
IN
2
I
RF input, DC decoupled
V
CCb
3
Power Supply
PWR
Supply voltage for bias circuit
VREF
4
PWR
1
st
and 2
nd
stage idle current control
Det
5
O
On-chip power detector
V
CC2
/ RFOUT
6
Power Supply
PWR/O
Power supply, 2
nd
stage/ RF Output
T1.0 75037
Table 2: Pin Description, 8-contact XSON (QX8)
Symbol
Pin No.
Pin Name
Type
1
1. I=Input, O=Output
Function
GND
0
Ground
Low inductance GND pad
V
CC1
1
Power Supply
PWR
Power supply, 1
st
stage
RF
IN
2
I
RF input, DC decoupled
V
CCb
3
Power Supply
PWR
Supply voltage for bias circuit
VREF
4
PWR
1
st
and 2
nd
stage idle current control
Det
5
O
On-chip power detector
RFOUT
6
O
RF output
RFOUT
7
O
RF output
V
CC2
8
Power Supply
PWR
Power supply, 2
nd
stage
T2.0 75037
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©2012 Silicon Storage Technology, Inc.
DS75037B
06/12
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2.4 GHz High-Efficiency Power Amplifier
SST12LP14E
Data Sheet
A Microchip Technology Company
Electrical Specifications
The AC and DC specifications for the power amplifier are specified for the conditions shown. Refer to Table 4 for
the DC voltage and current specifications. Refer to Figures 4 through 19 for the RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Input power to pins 2 (P
IN
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm
Average output power (P
OUT
)
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +26 dBm
1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the max-
imum rating of average output power could cause permanent damage to the device.
Supply Voltage at pins 1, 3, and 6 (V
CC
) for 6-contact XSON . . . . . . . . . . . . . . . . . . . . -0.3V to +5.0V
Supply Voltage at pins 1, 3, and 8 (V
CC
) for 8-contact XSON . . . . . . . . . . . . . . . . . . . . -0.3V to +5.0V
Reference voltage to pin 4 (V
REF
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.3V
DC supply current (I
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mA
Operating Temperature (T
A
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC
Storage Temperature (T
STG
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (T
J
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Table 3: Operating Range
Range
Ambient Temp
V
DD
Industrial
-40°C to +85°C
3.3V
T3.1 75037
Table 4: DC Electrical Characteristics @ 25ºC
Symbol
Parameter
Min. Typ Max. Unit
Test
Conditions
V
CC
Supply Voltage at pins 1,3, and 6 for 6-contact XSON
(QX6)
3.0
3.3
4.2
V
V
CC
Supply Voltage at pins 1,3, and 8 for 8-contact XSON
(QX8)
3.0
3.3
4.2
V
I
CC
Supply Current for 802.11g, 22 dBm
145
mA
I
CQ
Idle current for 802.11g to meet added EVM < 2.5% @
dBm
45
mA
I
OFF
Shut down current
2.0
µA
V
REG
Reference Voltage for, with 360
resistor
2.75
2.8
5
2.95
V
T4.3 75037
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©2012 Silicon Storage Technology, Inc.
DS75037B
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2.4 GHz High-Efficiency Power Amplifier
SST12LP14E
Data Sheet
A Microchip Technology Company
Table 5: AC Electrical Characteristics for Configuration (@25°C)
Symbol
Parameter
Min.
Typ
Max.
Unit
F
L-U
Frequency range
2400
2500
MHz
G
Small signal gain
22.5
23.5
dB
G
VAR1
Gain variation over band (2400~2485 MHz)
±0.5
dB
G
VAR2
Gain ripple over channel (20 MHz)
0.2
dB
ACPR
Meet 11b spectrum mask
21
22
dBm
Meet 11g OFDM 54 Mbps spectrum mask
21
22
dBm
Added EVM < 18 dBm output with 11g OFDM 54 Mbps signal
2.5
%
2f, 3f, 4f, 5f
Harmonics at 22 dBm, without external filters
-30
dBc
T5.2 75037
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2.4 GHz High-Efficiency Power Amplifier
SST12LP14E
Data Sheet
A Microchip Technology Company
Typical Performance Characteristics
Test Conditions: V
CC
= 3.3V, T
A
= 25°C, unless otherwise specified
Figure 4: S-Parameters
1369 S-Parms.0.0
S11 versus Frequency
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
Frequency (GHz)
S11
(dB)
-30
-25
-20
-15
-10
-5
0
S12 versus Frequency
-80
-70
-60
-50
-40
-30
-20
-10
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
Frequency (GHz)
S12
(dB)
S21 versus Frequency
-40
-30
-20
-10
0
10
20
30
40
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
Frequency (GHz)
S21
(dB)
S22 versus Frequency
-30
-25
-20
-15
-10
-5
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
Frequency (GHz)
S22
(dB)
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2.4 GHz High-Efficiency Power Amplifier
SST12LP14E
Data Sheet
A Microchip Technology Company
Typical Performance Characteristics
Test Conditions: V
CC
= 3.3V, T
A
= 25°C, 54 Mbps 802.11g OFDM signal
Figure 5: EVM versus Output Power measured using equalizer training with sequence only
Figure 6: Power Gain versus Output Power
1369 F7.2
0
1
2
3
4
5
6
7
8
9
10
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
EVM (%)
Output Power (dBm)
EVM versus Output Power
2412
2442
2484
1369 F8.0
10
12
14
16
18
20
22
24
26
28
30
9
10
11
12
13
14
15
16
17
18
19
20
21
Output Power (dBm)
Power Gain (dB)
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.484 GHz
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2.4 GHz High-Efficiency Power Amplifier
SST12LP14E
Data Sheet
A Microchip Technology Company
Figure 7: Total Current Consumption for 802.11g operation versus Output Power
Figure 8: PAE versus Output Power
1369 F9.0
40
50
60
70
80
90
100
110
120
130
140
9
10
11
12
13
14
15
16
17
18
19
20
21
Output Power (dBm)
Supply Current (mA)
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.484 GHz
1369 F10.0
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
9
10
11
12
13
14
15
16
17
18
19
20
21
Output Power (dBm)
PAE (%)
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.484 GHz