A Microchip Technology Company
©2011 Silicon Storage Technology, Inc.
DS75034A
12/11
Data Sheet
www.microchip.com
Features
• High Gain:
– Typically 32 dB gain across 2.4~2.5 GHz over tempera-
ture 0°C to +85°C
• High linear output power:
– >26 dBm P1dB
- Please refer to “Absolute Maximum Stress Ratings” on
page 5
– Meets 802.11g OFDM ACPR requirement up to 23 dBm
– ~4% added EVM up to 20 dBm for 54 Mbps 802.11g
signal
– Meets 802.11b ACPR requirement up to 23.5 dBm
• High power-added efficiency/Low operating cur-
rent for both 802.11b/g applications
– ~29%/205 mA @ P
OUT
= 23 dBm for 802.11g
– ~29%/230 mA @ P
OUT
= 23.5 dBm for 802.11b
• Single-pin low I
REF
power-up/-down control
– I
REF
<2 mA
• Low idle current
– ~100 mA I
CQ
• High-speed power-up/-down
– Turn on/off time (10%- 90%) <100 ns
– Typical power-up/-down delay with driver delay included
<200 ns
• High temperature stability
– ~1 dB power variation between 0°C to +85°C
• Low shut-down current (< 0.1 µA)
• Excellent On-chip power detection
– <+/- 0.5dB variation between 0°C to +85°C
– <+/- 0.3dB variation Ch1 through Ch14
• 20 dB dynamic range on-chip power detection
• Simple input/output matching
• Packages available
– 16-contact VQFN – 3mm x 3mm
• All non-Pb (lead-free) devices are RoHS compliant
Applications
• WLAN (IEEE 802.11b/g)
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14C
The SST12LP14C is a versatile power amplifier based on the highly-reliable
InGaP/GaAs HBT technology.Easily configured for high-power applications with
good power-added efficiency, it typically provides 32 dB gain with 29% PAE @
POUT = 23 dBm for 802.11g and 29% PAE @ POUT = 23.5 dBm for 802.11b.
This power amplifier has excellent linearity while meeting 802.11g spectrum mask
up to 23 dBm. The SST12LP14C also features easy board-level usage along with
high-speed power-up/-down control through a single combined reference voltage
pin. The SST12LP14C has an excellent on-chip and single ended power detector,
and is offered in 16-contact VQFN package.
©2011 Silicon Storage Technology, Inc.
DS75034A
12/11
2
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14C
Data Sheet
A Microchip Technology Company
Product Description
The SST12LP14C is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT tech-
nology.
The SST12LP14C can be easily configured for high-power applications with good power-added effi-
ciency (PAE) while operating over the 2.4- 2.5 GHz frequency band. It typically provides 32 dB gain
with 29% PAE @ P
OUT
= 23 dBm for 802.11g and 29% PAE @ P
OUT
= 23.5 dBm for 802.11b.
This power amplifier has excellent linearity, typically ~4% added EVM at 20 dBm output power. This is
essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask up to 23 dBm. The
SST12LP14C can be configured for applications with an added EVM of ~3%, up to 21 dBm with 19%
PAE over the 960-1060 MHz frequency bands. This configuration meets the 802.11g spectrum mask
up to 24 dBm with 28% PAE and the 802.11b spectrum mask up to 25 dBm with 31% PAE.
1
The SST12LP14C also features easy board-level usage along with high-speed power-up/-down control
through a single combined reference voltage pin. Ultra-low reference current (total I
REF
~2 mA) makes
the SST12LP14C controllable by an on/off switching signal directly from the baseband chip. These fea-
tures coupled with low operating current make this device ideal for the final stage power amplification
in battery-powered 802.11b/g WLAN transmitter applications.
This power amplifier has an excellent on-chip and single-ended power detector, which features a wide
range (>15 dB) with dB-wise linearization and high stability over temperature (+/-0.5 dB 0°C to +85°C),
and over frequency (<+/-0.3 dB across Channels 1 through 14). The on-chip power detector provides a
reliable solution to board-level power control.
The SST12LP14C is offered in 16-contact VQFN package. See Figure 2 for pin assignments and Table
1 for pin descriptions.
1. For more information on performance and reference design, see the SST12LP14C application note.
©2011 Silicon Storage Technology, Inc.
DS75034A
12/11
3
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14C
Data Sheet
A Microchip Technology Company
Functional Blocks
Figure 1: Functional Block Diagram
2
5
6
8
16
VCC1
15
1
14
NC
NC
4
9
11
12
10
13
NC
VCCb
VREF
VREF
NC
VCC2
RFOUT
RFOUT
Det
NC
3
RFIN
RFIN
NC
Bias Circuit
7
1353 B1.1
©2011 Silicon Storage Technology, Inc.
DS75034A
12/11
4
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14C
Data Sheet
A Microchip Technology Company
Pin Assignments
Figure 2: Pin Assignments for 16-contact VQFN
Pin Descriptions
Table 1: Pin Description
Symbol
Pin No.
Pin Name
Type
1
1. I=Input, O=Output
Function
GND
0
Ground
The center pad should be connected to RF ground
with several low inductance, low resistance vias
NC
1
No Connection
Unconnected pin
RFIN
2
I
RF input
RFIN
3
I
RF input
NC
4
No Connection
Unconnected pin
VCCb
5
Power Supply
PWR
Supply voltage for bias circuit
VREF
6
PWR
1
st
and 2
nd
stage idle current control
VREF
7
PWR
1
st
and 2
nd
stage idle current control
NC
8
No Connection
Unconnected pin
Det
9
O
On-chip power detector
RFOUT
10
O
RF output
RFOUT
11
O
RF output
VCC2
12
Power Supply
PWR
Power supply, 2
nd
stage
NC
13
No Connection
Unconnected pin
NC
14
No Connection
Unconnected pin
NC
15
No Connection
Unconnected pin
VCC1
16
Power Supply
PWR
Power supply, 1
st
stage
T1.0 75034
5
6
8
16
VCC1
15
14
NC
NC
9
11
12
10
13
NC
VCCb
VREF
VREF
NC
VCC2
RFOUT
RFOUT
Det
2
1
4
3
NC
RFIN
RFIN
NC
7
1353 16-vqfn P1.0
Top View
(contacts facing down)
RF and DC GND
0
©2011 Silicon Storage Technology, Inc.
DS75034A
12/11
5
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14C
Data Sheet
A Microchip Technology Company
Electrical Specifications
The AC and DC specifications for the power amplifier interface signals. Refer to Table 3 for the DC voltage and
current specifications. Refer to Figures 3 through Figure 12 for the RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Input power to pins 2 and 3 (P
IN
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm
Average output power (P
OUT
)
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +26 dBm
1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the max-
imum rating of average output power could cause permanent damage to the device.
Supply Voltage at pins 5, 12, and 16 (V
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.6V
Reference voltage to pins 6 and 7 (V
REF
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.3V
DC supply current (I
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mA
Operating Temperature (T
A
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC
Storage Temperature (T
STG
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (T
J
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Table 2: Operating Range
Range
Ambient Temp
V
CC
Industrial
-40°C to +85°C
3.3V
T2.1 75034
Table 3: DC Electrical Characteristics
Symbol
Parameter
Min.
Typ
Max.
Unit
Test Conditions
V
CC
Supply Voltage at pins 5, 12, 16
3.0
3.3
4.2
V
I
CC
Supply Current
for 802.11g, 23 dBm
205
mA
for 802.11b, 23.5 dBm
230
mA
I
CQ
Idle current for 802.11g to meet EVM<4% @ 20
dBm
100
mA
I
OFF
Shut down current
0.1
µA
V
REG
Reference Voltage for, with 30
resistor
2.85
2.95
V
T3.2 75034
©2011 Silicon Storage Technology, Inc.
DS75034A
12/11
6
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14C
Data Sheet
A Microchip Technology Company
Table 4: AC Electrical Characteristics for Configuration
Symbol
Parameter
Min.
Typ
Max.
Unit
F
L-U
Frequency range
2400
2485
MHz
P
OUT
Output power
@ PIN = -9 dBm 11b signals
22
dBm
@ PIN = -11 dBm 11g signals
20
dBm
G
Small signal gain
31
32
dB
G
VAR1
Gain variation over band (2400~2485 MHz)
±0.5
dB
G
VAR2
Gain ripple over channel (20 MHz)
0.2
dB
ACPR
Meet 11b spectrum mask
23
23.5
dBm
Meet 11g OFDM 54 Mbps spectrum mask
22
23
dBm
Added EVM @ 20 dBm output with 11g OFDM 54 Mbps signal
4
%
2f, 3f, 4f, 5f
Harmonics at 22 dBm, without external filters
-48
dBc
T4.3 75034
©2011 Silicon Storage Technology, Inc.
DS75034A
12/11
7
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14C
Data Sheet
A Microchip Technology Company
Typical Performance Characteristics
Test Conditions: V
CC
= 3.3V, T
A
= 25°C, unless otherwise specified
Figure 3: S-Parameters
1353 SParm0.0
S11 versus Frequency
-30
-25
-20
-15
-10
-5
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
Frequency (GHz)
S11
(dB)
S12 versus Frequency
-80
-70
-60
-50
-40
-30
-20
-10
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
Frequency (GHz)
S12
(dB)
S21 versus Frequency
-40
-30
-20
-10
0
10
20
30
40
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
Frequency (GHz)
S21
(dB)
S22 versus Frequency
-30
-25
-20
-15
-10
-5
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
Frequency (GHz)
S22
(dB)
©2011 Silicon Storage Technology, Inc.
DS75034A
12/11
8
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14C
Data Sheet
A Microchip Technology Company
Typical Performance Characteristics
Test Conditions: V
CC
= 3.3V, T
A
= 25°C, 54 Mbps 802.11g OFDM signal
Figure 4: EVM versus Output Power, measured with Equalizer Channel Estimation set to
“sequence plus data”
Figure 5: Power Gain versus Output Power
EVM versus Output Power
0
1
2
3
4
5
6
7
8
9
10
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Output Power (dBm)
EVM (%)
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.484 GHz
1353 F4.0
Power Gain versus Output Power
20
22
24
26
28
30
32
34
36
38
40
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Output Power (dBm)
Power Gain (dB)
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.484 GHz
1353 F5.0
©2011 Silicon Storage Technology, Inc.
DS75034A
12/11
9
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14C
Data Sheet
A Microchip Technology Company
Figure 6: Total Current Consumption for 802.11g Operation versus Output Power
Figure 7: PAE versus Output Power
Supply Current versus Output Power
80
90
100
110
120
130
140
150
160
170
180
190
200
210
220
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Output Power (dBm)
Supply Current (mA)
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.484 GHz
1353 F6.0
PAE versus Output Power
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Output Power (dBm)
PAE (%)
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.484 GHz
1353 F7.0
©2011 Silicon Storage Technology, Inc.
DS75034A
12/11
10
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14C
Data Sheet
A Microchip Technology Company
Figure 8: 802.11g Spectrum Mask at 23 dBm
Figure 9: Detector Characteristics over Temperature and over Frequency
-70
-60
-50
-40
-30
-20
-10
0
10
2.3 5
2.4 0
2.45
2.50
2.55
Freq = 2.412 GHZ
Freq = 2.442 GHz
Freq = 2.484 GHz
Frequency (GHz)
1353 F8.0
Amplitude
(dB)
Detector Voltage versus Output Power
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Output Power (dBm)
Detector Voltage (V)
Freq=2.412 GHz @ 25 C°
Freq=2.442 GHz @ 25 C°
Freq=2.484 GHz @ 25 C°
Freq=2.412 GHz @ 0 C°
Freq=2.442 GHz @ 0 C°
Freq=2.484 GHz @ 0 C°
Freq=2.412 GHz @ 85 C°
Freq=2.442 GHz @ 85 C°
Freq=2.484 GHz @ 85 C°
1353 F9.0