A Microchip Technology Company
©2011 Silicon Storage Technology, Inc.
DS75033A
10/11
Data Sheet
www.microchip.com
Features
• High Gain:
– Typically 29 dB gain across 2.4–2.5 GHz over tempera-
ture 0°C to +85°C
• High linear output power:
– >26 dBm P1dB
- Please refer to “Absolute Maximum Stress Ratings” on
page 5
– Meets 802.11g OFDM ACPR requirement up to 22 dBm
– ~2.5% added EVM up to 19 dBm for 54 Mbps 802.11g
signal
– Meets 802.11b ACPR requirement up to 22 dBm
• High power-added efficiency/Low operating cur-
rent for both 802.11g/b applications
– ~22%/220 mA @ P
OUT
= 22 dBm for 802.11g
– ~21%/230 mA @ P
OUT
= 22 dBm for 802.11b
• Single-pin low I
REF
power-up/down control
– I
REF
<2 mA
• Low idle current
– ~70 mA I
CQ
• High-speed power-up/down
– Turn on/off time (10%- 90%) <100 ns
– Typical power-up/down delay with driver delay included
<200 ns
• High temperature stability
– ~1 dB gain/power variation between 0°C to +85°C
• Low shut-down current (< 0.1 µA)
• Excellent On-chip power detection
– <+/- 0.3dB variation between 0°C to +85°C
– <+/- 0.4dB variation with 2:1 VSWR mismatch
– <+/- 0.3dB variation Ch1 through Ch14
• 20 dB dynamic range on-chip power detection
• Simple input/output matching
• Packages available
– 16-contact VQFN – 3mm x 3mm
• All non-Pb (lead-free) devices are RoHS compliant
Applications
• WLAN (IEEE 802.11g/b)
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07
The SST12LP07 is a versatile power amplifier based on the highly-reliable InGaP/
GaAs HBT technology. Easily configured for high-power applications with good
power-added efficiency while operating over the 2.4- 2.5 GHz frequency band, the
SST12LP07 has excellent linearity, typically ~2.5% added EVM at 19 dBm output
power, while meeting 802.11g spectrum mask at 22 dBm. The SST12LP07 fea-
tures easy board-level usage along with high-speed power-up/down control
through a single combined reference voltage pin, and is offered in a 16-contact
VQFN package.
©2011 Silicon Storage Technology, Inc.
DS75033A
10/11
2
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07
Data Sheet
A Microchip Technology Company
Product Description
The SST12LP07 is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT tech-
nology.
The SST12LP07 can be easily configured for high-power applications with good power-added effi-
ciency while operating over the 2.4- 2.5 GHz frequency band. This device typically provides 29 dB
gain with 22% power-added efficiency @ P
OUT
= 22 dBm for 802.11g and 21% power-added effi-
ciency @ P
OUT
= 22 dBm for 802.11b.
The SST12LP07 has excellent linearity, typically ~2.5% added EVM at 19 dBm output power which
is essential for 54 Mbps 802.11g/n operation while meeting 802.11g spectrum mask at 22 dBm.
The SST12LP07 can also be configured for high-efficiency operation, typically 17 dBm linear 54
Mbps 802.11g output power at 85 mA total power consumption. High-efficiency operation is desir-
able in embedded applications such as in hand-held units.
The SST12LP07 also features easy board-level usage along with high-speed power-up/down con-
trol through a single combined reference voltage pin. Ultra-low reference current (total I
REF
~2 mA)
makes the SST12LP07 controllable by an on/off switching signal directly from the baseband chip.
These features coupled with low operating current make the SST12LP07 ideal for the final stage
power amplification in battery-powered 802.11g/b WLAN transmitter applications.
The SST12LP07 has an excellent on-chip, single-ended power detector, which features wide-range
(~20 dB) with dB-wise linearization and high stability over temperature (< +/-0.3 dB 0°C to +85°C), fre-
quency (<+/-0.3 dB across Channels 1 through 14), and output load (<+/-0.4 dB with 2:1 output VSWR
all phases). The excellent on-chip power detector provides a reliable solution to board-level power con-
trol.
The SST12LP07 is offered in a 16-contact VQFN package. See Figure 2 for pin assignments and Table
1 for pin descriptions.
©2011 Silicon Storage Technology, Inc.
DS75033A
10/11
3
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07
Data Sheet
A Microchip Technology Company
Functional Blocks
Figure 1: Functional Block Diagram
2
5
6
8
16
VCC1
15
1
14
VCCb
NC
4
9
11
12
10
13
VCC2
NC
NC
NC
Det
NC
RFOUT
NC
NC
NC
3
RFIN
NC
VREF
Bias Circuit
7
1321 B1.0
©2011 Silicon Storage Technology, Inc.
DS75033A
10/11
4
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07
Data Sheet
A Microchip Technology Company
Pin Assignments
Figure 2: Pin Assignments for 16-contact VQFN
Pin Descriptions
Table 1: Pin Description
Symbol
Pin No.
Pin Name
Type
1
1. I=Input, O=Output
Function
GND
0
Ground
The center pad should be connected to RF ground with sev-
eral low inductance, low resistance vias
NC
1
No Connection
Unconnected pin
RFIN
2
I
RF input, DC decoupled
NC
3
No Connection
Unconnected pin
VREF
4
I
1
st
and 2
nd
stage idle current control
NC
5
No Connection
Unconnected pin
NC
6
No Connection
Unconnected pin
NC
7
No Connection
Unconnected pin
Det
8
O
On-chip power detector
NC
9
No Connection
Unconnected pin
NC
10
No Connection
Unconnected pin
RFOUT
11
O
RF output
NC
12
No Connection
Unconnected pin
VCC2
13
Power Supply
PWR
Power supply, 2
nd
stage
VCCb
14
Power Supply
PWR
Power supply, bias circuit
NC
15
No Connection
Unconnected pin
VCC1
16
Power Supply
PWR
Power supply, 1
st
stage
T1.0 75033
5
6
8
16
VCC1
15
14
VCCb
NC
9
11
12
10
13
VCC2
NC
NC
NC
Det
NC
RFOUT
NC
NC
2
1
4
3
NC
RFIN
NC
VREF
7
1321 P1.0
Top View
(contacts facing down)
RF and DC GND
0
©2011 Silicon Storage Technology, Inc.
DS75033A
10/11
5
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07
Data Sheet
A Microchip Technology Company
Electrical Specifications
The AC and DC specifications for the power amplifier interface signals. Refer to Table 3 for the DC voltage and
current specifications. Refer to Figures 3 through 11 for the RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Input power to pin 2 (P
IN
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm
Average output power (P
OUT
)
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +26 dBm
1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the max-
imum rating of average output power could cause permanent damage to the device.
Supply Voltage at pins 13, 14, and 16 (V
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.0V
Reference voltage to pin 4 (V
REF
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.3V
DC supply current (I
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mA
Operating Temperature (T
A
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC
Storage Temperature (T
STG
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (T
J
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Table 2: Operating Range
Range
Ambient Temp
V
DD
Industrial
-40°C to +85°C
3.3V
T2.1 75033
Table 3: DC Electrical Characteristics
Symbol
Parameter
Min. Typ Max. Unit Test Conditions
V
CC
Supply Voltage at pins 13, 14, 16
3.0
3.3
3.6
V
I
CC
Supply Current
for 802.11g, 22 dBm
220
mA
for 802.11b, 22 dBm
230
mA
I
CQ
Idle current for 802.11g to meet EVM <2.5% @ 19
dBm
70
mA
I
OFF
Shut down current
0.1
µA
V
REG
Reference Voltage for, with 110
resistor
2.7
5
2.8
5
2.95
V
T3.0 75033
©2011 Silicon Storage Technology, Inc.
DS75033A
10/11
6
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07
Data Sheet
A Microchip Technology Company
Table 4: AC Electrical Characteristics for Configuration
Symbol
Parameter
Min.
Typ
Max.
Unit
F
L-U
Frequency range
2400
2485
MHz
P
OUT
Output power
@ PIN = -6 dBm 11b signals
22
dBm
@ PIN = -7 dBm 11g signals
21
dBm
G
Small signal gain
28
29
dB
G
VAR1
Gain variation over band (2400~2485 MHz)
±0.5
dB
G
VAR2
Gain ripple over channel (20 MHz)
0.2
dB
ACPR
Meet 11b spectrum mask
22
dBm
Meet 11g OFDM 54 Mbps spectrum mask
22
dBm
Added EVM @ 19 dBm output with 11g OFDM 54 Mbps signal
2.5
%
2f, 3f, 4f, 5f
Harmonics at 22 dBm, without external filters
-40
dBc
T4.2 75033
©2011 Silicon Storage Technology, Inc.
DS75033A
10/11
7
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07
Data Sheet
A Microchip Technology Company
Typical Performance Characteristics
Test Conditions: V
CC
= 3.3V, T
A
= 25°C, unless otherwise specified
Figure 3: S-Parameters
1321 F3.0
S11 versus Frequency
-30
-25
-20
-15
-10
-5
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
Frequency (GHz)
S11
(dB)
S12 versus Frequency
-80
-70
-60
-50
-40
-30
-20
-10
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
Frequency (GHz)
S12
(dB)
S21 versus Frequency
-40
-30
-20
-10
0
10
20
30
40
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
Frequency (GHz)
S21
(dB)
S22 versus Frequency
-30
-25
-20
-15
-10
-5
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
Frequency (GHz)
S22
(dB)
©2011 Silicon Storage Technology, Inc.
DS75033A
10/11
8
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07
Data Sheet
A Microchip Technology Company
Typical Performance Characteristics
Test Conditions: V
CC
= 3.3V, T
A
= 25°C, 54 Mbps 802.11g OFDM signal
Figure 4: EMV versus Output Power
Figure 5: Power Gain versus Output Power
EVM versus Output Power
0
1
2
3
4
5
6
7
8
9
10
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Output Power (dBm)
EVM (%)
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.484 GHz
1321 F4.0
Power Gain versus Output Power
20
22
24
26
28
30
32
34
36
38
40
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Output Power (dBm)
Power Gain (dB)
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.484 GHz
1321 F5 0
©2011 Silicon Storage Technology, Inc.
DS75033A
10/11
9
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07
Data Sheet
A Microchip Technology Company
Figure 6: Total Current Consumption for 802.11g operation versus Output Power
Figure 7: PAE versus Output Power
Supply Current versus Output Power
80
100
120
140
160
180
200
220
240
260
280
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Output Power (dBm)
Supply Current (mA)
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.484 GHz
1321 F6.0
PAE versus Output Power
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Output Power (dBm)
PAE (%)
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.484 GHz
1321 F7.0
©2011 Silicon Storage Technology, Inc.
DS75033A
10/11
10
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07
Data Sheet
A Microchip Technology Company
Figure 8: 802.11g Spectrum Mask at 22 dBm
Figure 9: Detector Characteristics Over Temperature and Over Frequency
-70
-60
-50
-40
-30
-20
-10
0
10
2.3 5
2.4 0
2 .45
2 .50
2 .5 5
Freq = 2.412 GHZ
Freq = 2.442 GHz
Freq = 2.484 GHz
Frequency (GHz)
1321 F8.0
Amplitude
(dB)
Detector Voltage versus Output Power
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Output Power (dBm)
Detector Voltage (V)
Freq = 2.412 GHz (25°C)
Freq = 2.442 GHz (25°C)
Freq = 2.484 GHz (25°C)
Freq = 2.412 GHz (0°C)
Freq = 2.442 GHz (0°C)
Freq = 2.484 GHz (0°C)
Freq = 2.412 GHz (85°C)
Freq = 2.442 GHz (85°C)
Freq = 2.484 GHz (85°C)
1321 F9.1