A Microchip Technology Company
©2011 Silicon Storage Technology, Inc.
DS75031A
10/11
Data Sheet
www.microchip.com
Features
• High Gain:
– Typically 30 dB gain across 2.4~2.5 GHz over tempera-
ture 0°C to +80°C
• High linear output power:
– >26.5 dBm P1dB
– Meets 802.11g OFDM ACPR requirement up to 23 dBm
– Added EVM ~4% up to 20 dBm for
54 Mbps 802.11g signal
– Meets 802.11b ACPR requirement up to 24 dBm
• High power-added efficiency/Low operating cur-
rent for both 802.11g/b applications
– ~22% @ P
OUT
= 22 dBm for 802.11g
– ~26% @ P
OUT
= 23.5 dBm for 802.11b
• Built-in Ultra-low I
REF
power-up/down control
– I
REF
<4 mA
• Low idle current
– ~60 mA I
CQ
• High-speed power-up/down
– Turn on/off time (10%~90%) <100 ns
– Typical power-up/down delay with driver delay included
<200 ns
• High temperature stability
– ~1 dB gain/power variation between 0°C to +80°C
– ~1 dB detector variation over 0°C to +80°C
• Low shut-down current (< 0.1 µA)
• On-chip power detection
• 25 dB dynamic range on-chip power detection
• Simple input/output matching
• Packages available
– 16-contact VQFN (3mm x 3mm)
– Non-Pb (lead-free) packages available
Applications
• WLAN (IEEE 802.11g/b)
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
2.4 GHz Power Amplifier
SST12LP14
The SST12LP14 is a high-performance power amplifier IC based on the highly-
reliable InGaP/GaAs HBT technology. Easily configured for high-power, high-effi-
ciency applications with superb power-added efficiency, it typically provides 30 dB
gain with 22% power added efficiency. The SST12LP14 has excellent linearity
while meeting 802.11g spectrum mask at 23 dBm.It is ideal for the final stage
power amplification in battery-powered 802.11g/b WLAN transmitter applications,
and is offered in 16-contact VQFN package.
©2011 Silicon Storage Technology, Inc.
DS75031A
10/11
2
2.4 GHz Power Amplifier
SST12LP14
Data Sheet
A Microchip Technology Company
Product Description
The SST12LP14 is a high-performance power amplifier IC based on the highly-reliable InGaP/
GaAs HBT technology.
The SST12LP14 can be easily configured for high-power, high-efficiency applications with superb
power-added efficiency while operating over the 2.4~2.5 GHz frequency band. It typically provides
30 dB gain with 22% power-added efficiency @ P
OUT
= 22 dBm for 802.11g and 27% power-
added efficiency @ P
OUT
= 24 dBm for 802.11b.
The SST12LP14 has excellent linearity, typically <4% added EVM up to 20 dBm output power
which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 23
dBm. The SST12LP14 also has wide-range (>25 dB), temperature-stable (~1 dB over 80°C), sin-
gle-ended/differential power detectors which lower users’ cost on power control.
The power amplifier IC also features easy board-level usage along with high-speed power-up/
down control. Ultra-low reference current (total I
REF
<4 mA) makes the SST12LP14 controllable by
an on/off switching signal directly from the baseband chip. These features coupled with low operat-
ing current make the SST12LP14 ideal for the final stage power amplification in battery-powered
802.11g/b WLAN transmitter applications.
The SST12LP14 is offered in 16-contact VQFN package. See Figure 2 for pin assignments and Table 1
for pin descriptions.
©2011 Silicon Storage Technology, Inc.
DS75031A
10/11
3
2.4 GHz Power Amplifier
SST12LP14
Data Sheet
A Microchip Technology Company
Functional Blocks
Figure 1: Functional Block Diagram
2
5
6
8
16
VCC1
15
1
14
NC
NC
4
9
11
12
10
13
NC
VCCb
VREF1
VREF2
Det_ref
VCC2
RFOUT
RFOUT
Det
NC
3
RFIN
RFIN
NC
Bias Circuit
7
1279 B1.1
©2011 Silicon Storage Technology, Inc.
DS75031A
10/11
4
2.4 GHz Power Amplifier
SST12LP14
Data Sheet
A Microchip Technology Company
Pin Assignments
Figure 2: Pin Assignments for 16-contact VQFN
Pin Descriptions
Table 1: Pin Description
Symbol Pin No. Pin Name
Type
1
1. I=Input, O=Output
Function
GND
0
Ground
The center pad should be connected to RF ground with several low
inductance, low resistance vias.
NC
1
No Connection
Unconnected pins.
RFIN
2
I
RF input, DC decoupled
RFIN
3
I
RF input, DC decoupled
NC
4
No Connection
Unconnected pins.
VCCb
5
Power Supply
PWR
Supply voltage for bias circuit
VREF1
6
PWR
1st stage idle current control
VREF2
7
PWR
2nd stage idle current control
Det_ref
8
O
On-chip power detector reference
Det
9
O
On-chip power detector
RFOUT
10
O
RF output
RFOUT
11
O
RF output
VCC2
12
Power Supply
PWR
Power supply, 2nd stage
NC
13
No Connection
Unconnected pins.
NC
14
No Connection
Unconnected pins.
NC
15
No Connection
Unconnected pins.
VCC1
16
Power Supply
PWR
Power supply, 1st stage
T1.0 75031
5
6
8
16
VCC1
15
14
NC
NC
9
11
12
10
13
NC
VCCb
VREF1
VREF2
Det_ref
VCC2
RFOUT
RFOUT
Det
2
1
4
3
NC
RFIN
RFIN
NC
7
1279 16-vqfn P1.1
Top View
(contacts facing down)
RF and DC GND
0
©2011 Silicon Storage Technology, Inc.
DS75031A
10/11
5
2.4 GHz Power Amplifier
SST12LP14
Data Sheet
A Microchip Technology Company
Electrical Specifications
The AC and DC specifications for the power amplifier interface signals. Refer to Table 3 for the DC voltage and
current specifications. Refer to Figures 3 through 13 for the RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Supply Voltage at pins 5, 12, and 16 (V
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.6V
Reference voltage to pin 6 (V
REF1
) and pin 7 (V
REF2
) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.6V
DC supply current (I
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA
Operating Temperature (T
A
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC
Storage Temperature (T
STG
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (T
J
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC
Surface Mount Solder Reflow Temperature: . . . . . . . . . . . . . . “with-Pb” units
1
: 240°C for 3 seconds
1. Certain “with-Pb” package types are capable of 260°C for 3 seconds; please consult the factory for the latest informa-
tion.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . “non-Pb” units: 260°C for 3 seconds
Table 2: Operating Range
Range
Ambient Temp
V
DD
Industrial
-40°C to +85°C
3.3V
T2.1 75031
Table 3: DC Electrical Characteristics
Symbol
Parameter
Min. Typ Max. Unit Test Conditions
V
CC
Supply Voltage at pins 5, 12, 16
3.0
3.3
4.2
V
I
CC
Supply Current
for 802.11g, 24 dBm
290
mA
for 802.11g, 25 dBm
340
mA
I
CQ
Idle current for 802.11g to meet EVM @ 20.5 dBm
55
mA
I
OFF
Shut down current
0.1
µA
V
REG1
Reference Voltage for 1st Stage, with 120
resistor
2.7
2.9
3.1
V
V
REG2
Reference Voltage for 2nd Stage, with 360
resistor
2.7
2.9
3.1
V
V
REG1
Reference Voltage for 1st Stage, with 220
resistor
2.9
3.1
3.3
V
V
REG2
Reference Voltage for 2nd Stage, with 590
resistor
2.9
3.1
3.3
V
T3.0 75031
©2011 Silicon Storage Technology, Inc.
DS75031A
10/11
6
2.4 GHz Power Amplifier
SST12LP14
Data Sheet
A Microchip Technology Company
Table 4: AC Electrical Characteristics for Configuration
Symbol
Parameter
Min.
Typ
Max.
Unit
F
L-U
Frequency range
2400
2485
MHz
P
OUT
Output power
@ PIN = -7 dBm 11b signals
23
dBm
@ PIN = -10 dBm 11g signals
20
dBm
G
Small signal gain
30
31
33
dB
G
VAR1
Gain variation over band (2400~2485 MHz)
±0.5
dB
G
VAR2
Gain ripple over channel (20 MHz)
0.2
dB
ACPR
Meet 11b spectrum mask
23
dBm
Meet 11g OFDM 54 MBPS spectrum mask
22
dBm
Added EVM
@ 20 dBm output with 11g OFDM 54 MBPS signal
3
%
2f, 3f, 4f, 5f
Harmonics at 22 dBm, without trapping capacitors
-40
dBc
T4.0 75031
©2011 Silicon Storage Technology, Inc.
DS75031A
10/11
7
2.4 GHz Power Amplifier
SST12LP14
Data Sheet
A Microchip Technology Company
Typical Performance Characteristics
Test Conditions: V
CC
= 3.3V, T
A
= 25°C
Figure 3: S-Parameters
Figure 4: Input Return Loss
©2011 Silicon Storage Technology, Inc.
DS75031A
10/11
8
2.4 GHz Power Amplifier
SST12LP14
Data Sheet
A Microchip Technology Company
Figure 5: In-band Gain Flatness
©2011 Silicon Storage Technology, Inc.
DS75031A
10/11
9
2.4 GHz Power Amplifier
SST12LP14
Data Sheet
A Microchip Technology Company
Typical Performance Characteristics
Test Conditions: F1 = 2.45 GHz, F2 = 2.451 GHz
Figure 6: P
OUT
vs P
IN
Figure 7: IM3 vs P
OUT
©2011 Silicon Storage Technology, Inc.
DS75031A
10/11
10
2.4 GHz Power Amplifier
SST12LP14
Data Sheet
A Microchip Technology Company
Figure 8: Detectors vs P
OUT
Figure 9: Gain vs P
OUT
Figure 10:PAE for Two Tone