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A Microchip Technology Company
©2012 Silicon Storage Technology, Inc.
DS-75003C
08/12
Data Sheet
www.microchip.com
Features
• High gain:
– Typically 25 dB gain across 2.4~2.5 GHz
• High linear output power:
– >26 dBm P1dB
- Single-tone measurement
- Please refer to “Absolute Maximum Stress Ratings” on
page 5
– Meets 802.11g OFDM ACPR requirement up to 21.5
dBm
– Meets 802.11b ACPR requirement up to 22.5 dBm
– ~3% added EVM up to 18 dBm for 54 Mbps 802.11g
signal
– 17 dBm at 1.8% EVM, 802.11ac, 256 QAM, 2.4 GHz
• High power-added efficiency/Low operating cur-
rent for 802.11b/g/n applications
– ~32%/135 mA @ P
OUT
= 21.5 dBm for 802.11g
– ~36%/150 mA @ P
OUT
= 22.5 dBm for 802.11b
• Single-pin low I
REF
power-up/down control
– I
REF
<2 mA
• Low idle current for high-efficiency operation
– ~50 mA I
CQ
• High-speed power-up/down control
– Turn on/off time (10%- 90%) <100 ns
– Typical power-up/down delay with driver delay included
<200 ns
• Low shut-down current (~2 µA)
• Limited variation over temperature
– ~1 dB gain/power variation between -20°C to +85°C
• Excellent on-chip power detection
– >15 dB dynamic range on-chip power detection
– Temperature and VSWR insensitive
• Simple output matching
• Packages available
– 8-contact XSON – 2mm x 2mm
• All non-Pb (lead-free) devices are RoHS compliant
Applications
• WLAN (IEEE 802.11b/g/n/ac)
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
2.4 GHz High-Efficiency, High-Gain Power Amplifier
SST12LP18E
The SST12LP18E is a versatile power amplifier based on the highly-reliable
InGaP/GaAs HBT technology. The SST12LP18E is a 2.4 GHz high-efficiency
Power Amplifier designed in compliance with IEEE 802.11b/g/n/ac applications.
It typically provides 25 dB gain with 32% power-added efficiency, while meeting
802.11g spectrum mask at 21.5 dBm. The SST12LP18E can be configured for
high-linearity for 802.11ac operation or for high-power, high-efficiency operation.
This power amplifier also features easy board-level usage along with high-
speed power-up/down control through a single reference voltage pin and is
offered in a 8-contact XSON package.
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©2012 Silicon Storage Technology, Inc.
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2.4 GHz High-Efficiency, High-Gain Power Amplifier
SST12LP18E
Data Sheet
A Microchip Technology Company
Product Description
The SST12LP18E is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT tech-
nology.
The SST12LP18E is a 2.4 GHz high-efficiency Power Amplifier designed in compliance with IEEE
802.11b/g/n/ac applications. It typically provides 25 dB gain with 32% power-added efficiency (PAE) @
POUT = 21.5 dBm for 802.11g and 36% PAE @ POUT = 22.5 dBm for 802.11b.
The SST12LP18E has excellent linearity, typically ~3% added EVM at 18 dBm output power which is
essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 21.5 dBm.
SST12LP18E can also be configured for high-linearity with EVM <1.8% at typically 17 dBm for
802.11ac operation.
The SST12LP18E also features easy board-level usage along with high-speed power-up/down control
through a single combined reference voltage pin. Ultra-low reference current (total I
REF
~2 mA) makes
the SST12LP18E controllable by an on/off switching signal directly from the baseband chip. These fea-
tures, coupled with low operating current, make the SST12LP18E ideal for the final stage power ampli-
fication in battery-powered 802.11b/g/n/ac WLAN transmitter applications.
The SST12LP18E has an excellent on-chip, single-ended power detector, which features wide-range
(>15 dB) with dB-wise linear operation. The excellent on-chip power detector is both temperature and
VSWR insensitive; therefore, it provides a reliable solution to board-level power control.
The SST12LP18E is offered in 8-contact XSON package. See Figure 2 for pin assignments and Table 1
for pin descriptions.
PR
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©2012 Silicon Storage Technology, Inc.
DS-75003C
08/12
3
2.4 GHz High-Efficiency, High-Gain Power Amplifier
SST12LP18E
Data Sheet
A Microchip Technology Company
Functional Blocks
Figure 1: Functional Block Diagram
4
3
2
1
5
6
7
8
Bias Circuit
VCC1
VCCb
VREF
RFIN
RFOUT
RFOUT
VCC2
F1.0
DET
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AR
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©2012 Silicon Storage Technology, Inc.
DS-75003C
08/12
4
2.4 GHz High-Efficiency, High-Gain Power Amplifier
SST12LP18E
Data Sheet
A Microchip Technology Company
Pin Assignments
Figure 2: Pin Assignments for 8-contact XSON
Pin Descriptions
Table 1: Pin Description
Symbol
Pin No.
Pin Name
Type
1
1. I=Input, O=Output
Function
GND
0
Ground
Low inductance GND pad
V
CC1
1
Power Supply
PWR
Power supply, 1
st
stage
RF
IN
2
I
RF input, DC decoupled
V
CCb
3
Power Supply
PWR
Supply voltage for bias circuit
VREF
4
PWR
1
st
and 2
nd
stage idle current control
Det
5
O
On-chip power detector
RFOUT
6
O
RF output
RFOUT
7
O
RF output
V
CC2
8
Power Supply
PWR
Power supply, 2
nd
stage
T1.0 75003
4
3
2
1
5
6
7
8
VCC1
VCCb
VREF
RFIN
RFOUT
RFOUT
VCC2
Top View
RF & DC
Ground
0
(Contacts
facing down)
DET
F2.0
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©2012 Silicon Storage Technology, Inc.
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2.4 GHz High-Efficiency, High-Gain Power Amplifier
SST12LP18E
Data Sheet
A Microchip Technology Company
Electrical Specifications
The DC and RF specifications for the power amplifier are specified below. Refer to Table 3 for the DC voltage
and current specifications. Refer to Figures 3 through 13 for the RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Input power to pin 2 (P
IN
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm
Average output power (P
OUT
)
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +26 dBm
1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the max-
imum rating of average output power could cause permanent damage to the device.
Supply Voltage at pins 1, 3, and 8(V
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.2V
Reference voltage to pin 4 (V
REF
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.3V
DC supply current (I
CC
)
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mA
2. Measured with 100% duty cycle 54 Mbps 802.11g OFDM Signal
Operating Temperature (T
A
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC
Storage Temperature (T
STG
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (T
J
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Table 2: Operating Range
Range
Ambient Temp
V
CC
Industrial
-40°C to +85°C
3.3V
T2.1 75003
Table 3: DC Electrical Characteristics at 25°C for High-Linearity Configurations
1
1. See Figure 8
Symbol
Parameter
Min. Typ Max. Unit
V
CC
Supply Voltage at pins 1,3,and 8
3.0
3.3
3.6
V
I
CQ
Idle current to meet EVM ~1.8% @ 17 dBm Output Power with 802.11g OFDM
54 Mbps signal
110
mA
I
CC
Current Consumption @ 18 dBm Output Power with 802.11g OFDM 54 Mbps
signal
140
Current Consumption to meet 802.11g OFDM 6 Mbps Spectrum mask @
21.5 dBm Output Power
170
mA
Current Consumption to meet 802.11b DSSS 1 Mbps Spectrum mask @
22.5 dBm Output Power
180
mA
V
REG
Reference Voltage with 0
resistor
2.7
2.8
2.9
V
T3.1 75003
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©2012 Silicon Storage Technology, Inc.
DS-75003C
08/12
6
2.4 GHz High-Efficiency, High-Gain Power Amplifier
SST12LP18E
Data Sheet
A Microchip Technology Company
Table 4: DC Electrical Characteristics at 25°C for High-Efficiency Configurations
1
Symbol
Parameter
Min. Typ Max. Unit
V
CC
Supply Voltage at pins 1,3,and 8
3.0
3.3
3.6
V
I
CQ
Idle current to meet EVM ~3% @ 18 dBm Output Power with 802.11g OFDM
54 Mbps signal
50
mA
I
CC
Current Consumption @ 18 dBm Output Power with 802.11g OFDM 54 Mbps
signal
95
Current Consumption to meet 802.11g OFDM 6 Mbps Spectrum mask @
21.5 dBm Output Power
135
mA
Current Consumption to meet 802.11b DSSS 1 Mbps Spectrum mask @
22.5 dBm Output Power
150
mA
V
REG
Reference Voltage with 360
resistor
2.7
2.8
2.9
V
T4.1 75003
1. See Figure 14
Table 5: RF Electrical Characteristics at 25°C
Symbol
Parameter
Min.
Typ
Max.
Unit
F
L-U
Frequency range
2412
2484
MHz
G
Small signal gain
24
25
dB
G
VAR1
Gain variation over band (2412–2484 MHz)
±0.5
dB
G
VAR2
Gain ripple over channel (20 MHz)
0.2
dB
EVM
EVM@ 18 dBm Output Power with 802.11g OFDM 54 Mbps signal
1
1. See Figure 14
3.0
%
EVM@ 17 dBm Output Power with 802.11ac 20 MHz BW
2
2. See Figure 8
1.8
%
P
OUT
Output Power to meet 802.11g OFDM 6 Mbps Spectrum mask
20.5
21.5
dBm
Output Power to meet 802.11b DSSS 1 Mbps Spectrum mask
21.5
22.5
dBm
2f, 3f, 4f, 5f
Harmonics at 23 dBm, without external filters
-30
dBc
T5.2 75003
Table 6: Typical Performance with Different Bias Options for High-Efficiency Configuration
V
REG
(V) R1
1
(
)
1. See Figure 14
I
CQ
2
(mA)
2. At room temperature
I
CC
@ P
OUT
=
18 dBm
2
(mA)
Typical Performance with Each Biased Option
2.85
500
45
95
Meet added EVM < 3% up to 18 dBm output power at -40ºC
2.80
360
50
95
Meet added EVM < 3% up to 18 dBm output power at -40ºC
2.70
180
50
95
Meet added EVM < 3% up to 18 dBm output power at -20ºC
2.70
33
72
110
Meet added EVM < 3% up to 18 dBm output power at -40ºC
2.70
0
82
120
Meet added EVM < 3% up to 18 dBm output power at -40ºC
T6.1 75003
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2.4 GHz High-Efficiency, High-Gain Power Amplifier
SST12LP18E
Data Sheet
A Microchip Technology Company
Typical Performance Characteristics
Test Conditions: V
CC
= 3.3V, T
A
= 25°C, unless otherwise specified
Figure 3: S-Parameters
S11 versus Frequency
Frequency (GHz)
S11
(dB)
Frequency (GHz)
S21
(dB)
S22
(dB)
Frequency (GHz)
S12
(dB)
Frequency (GHz)
S-Parms.1.1
S12 versus Frequency
S21 versus Frequency
S22 versus Frequency
-
30
-
25
-
20
-
15
-
10
-5
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
-
80
-
70
-
60
-
50
-
40
-
30
-
20
-
10
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
-40
-30
-20
-10
0
10
20
30
40
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
-30
-25
-20
-15
-10
-5
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
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©2012 Silicon Storage Technology, Inc.
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2.4 GHz High-Efficiency, High-Gain Power Amplifier
SST12LP18E
Data Sheet
A Microchip Technology Company
High-Linearity Configuration for 802.11b/g/n/ac
Typical Performance Characteristics
Test Conditions: V
CC
= 3.3V, V
REF
= 2.8V, T
A
= 25°C, 54 Mbps 802.11g OFDM
Signal; Equalizer Training Setting using Channel Estimation Sequence Only
Figure 4: EVM versus Output Power
Figure 5: Power Gain versus Output Power
75003 F13.0
0
1
2
3
4
5
6
7
8
9
10
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
EVM (%)
Output Power (dBm)
EVM versus Output Power
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.472 GHz
75003 F14.0
10
12
14
16
18
20
22
24
26
28
30
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Power Gain (dB)
Output Power (dBm)
Power Gain versus Output Power
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.472 GHz
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2.4 GHz High-Efficiency, High-Gain Power Amplifier
SST12LP18E
Data Sheet
A Microchip Technology Company
High-Linearity Configuration (continued)
Figure 6: Total Current Consumption for 802.11g operation versus Output Power
Figure 7: Detector Characteristics versus Output Power
75003 F15.0
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
190
200
210
220
230
240
250
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Supply Current (mA)
Output Power (dBm)
Supply Current versus Output Power
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.472 GHz
75003 F16.0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Detector Voltage (V)
Output Power (dBm)
Detector Voltage versus Output Power
Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.472 GHz
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2.4 GHz High-Efficiency, High-Gain Power Amplifier
SST12LP18E
Data Sheet
A Microchip Technology Company
High-Linearity Configuration (continued)
Figure 8: Typical Schematic for High-Linearity 802.11b/g/n/ac Applications
75003 F17.0
10
µ
F
VCC
F
6.8 nH / 0603
0.1 F
0.1
µ
0.1
µ
50
Ω
RFIN
F
µ
RFOUT
100 pF
1.8 pF
50
Ω
1.0 nH
0.1
Vdet
100 pF
VREG
R1 = 0
Ω
Test conditions:
VCC = 3.3 V
VREG = 2.80 V
12LP18E
2X2 8L XSON
Top View
4
3
2
1
5
6
7
8
100 pF