![background image](/sites/default/files/pdfhtml_microchip/21668d001.png)
© 2009 Microchip Technology Inc.
DS21668D-page 1
MCP6141/2/3/4
Features:
• Low Quiescent Current: 600 nA/amplifier (typical)
• Gain Bandwidth Product: 100 kHz (typical)
• Stable for gains of 10 V/V or higher
• Rail-to-Rail Input/Output
• Wide Supply Voltage Range: 1.4V to 6.0V
• Available in Single, Dual, and Quad
• Chip Select (CS) with MCP6143
• Available in 5-lead and 6-lead SOT-23 Packages
• Temperature Ranges:
- Industrial: -40°C to +85°C
- Extended: -40°C to +125°C
Applications:
• Toll Booth Tags
• Wearable Products
• Temperature Measurement
• Battery Powered
Design Aids:
• SPICE Macro Models
• FilterLab
®
Software
• Mindi™ Simulation Tool
• Microchip Advanced Part Selector (MAPS)
• Analog Demonstration and Evaluation Boards
• Application Notes
Related Devices:
• MCP6041/2/3/4: Unity Gain Stable Op Amps
Typical Application
Description:
The MCP6141/2/3/4 family of non-unity gain stable
operational amplifiers (op amps) from Microchip
Technology Inc. operate with a single supply voltage as
low as 1.4V, while drawing less than 1 µA (maximum)
of quiescent current per amplifier. These devices are
also designed to support rail-to-rail input and output
operation. This combination of features supports
battery-powered and portable applications.
The MCP6141/2/3/4 amplifiers have a gain bandwidth
product of 100 kHz (typical) and are stable for gains of
10 V/V or higher. These specifications make these op
amps appropriate for battery powered applications
where a higher frequency response from the amplifier
is required.
The MCP6141/2/3/4 family operational amplifiers are
offered in single (MCP6141), single with Chip Select
(CS) (MCP6143), dual (MCP6142) and quad
(MCP6144) configurations. The MCP6141 device is
available in the 5-lead SOT-23 package, and the
MCP6143 device is available in the 6-lead SOT-23
package.
Package Types
MCP614X
V
OUT
R
F
R
3
V
3
R
2
V
2
R
1
V
1
V
REF
Inverting, Summing Amplifier
V
IN
+
V
IN
–
V
SS
V
DD
V
OUT
1
2
3
4
8
7
6
5 NC
NC
NC
MCP6141
PDIP, SOIC, MSOP
MCP6142
PDIP, SOIC, MSOP
MCP6143
PDIP, SOIC, MSOP
MCP6144
PDIP, SOIC, TSSOP
V
INA
+
V
INA
–
V
SS
V
OUTB
V
INB
–
1
2
3
4
8
7
6
5 V
INB
+
V
DD
V
OUTA
V
IN
+
V
IN
–
V
SS
V
DD
V
OUT
1
2
3
4
8
7
6
5 NC
CS
NC
V
INA
+
V
INA
–
V
DD
V
IND
–
V
IND
+
1
2
3
4
14
13
12
11 V
SS
V
OUTD
V
OUTA
V
INB
–
V
INB
+
V
OUTB
V
INC
+
V
INC
–
5
6
7
10
9
8 V
OUTC
V
IN
+
V
SS
V
IN
–
1
2
3
5
4
V
DD
V
OUT
MCP6141
SOT-23-5
V
IN
+
V
SS
V
IN
–
1
2
3
6
4
V
DD
V
OUT
MCP6143
SOT-23-6
5 CS
600 nA, Non-Unity Gain Rail-to-Rail Input/Output Op Amps
![background image](/sites/default/files/pdfhtml_microchip/21668d002.png)
MCP6141/2/3/4
DS21668D-page 2
© 2009 Microchip Technology Inc.
NOTES:
![background image](/sites/default/files/pdfhtml_microchip/21668d003.png)
© 2009 Microchip Technology Inc.
DS21668D-page 3
MCP6141/2/3/4
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
DD
– V
SS
........................................................................7.0V
Current at Analog Input Pins.........................................±2 mA
Analog Inputs (V
IN
+, V
IN
–) †† ........ V
SS
– 1.0V to V
DD
+ 1.0V
All Other Inputs and Outputs ......... V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input Voltage ...................................... |V
DD
– V
SS
|
Output Short Circuit Current ................................ Continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature ................................... –65°C to +150°C
Maximum Junction Temperature (T
J
)......................... .+150°C
ESD Protection On All Pins (HBM; MM)
.............. ≥ 4 kV; 400V
† Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
†† See Section 4.1.2 “Input Voltage and Current Limits”.
DC ELECTRICAL CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, V
DD
= +1.4V to +5.5V, V
SS
= GND, T
A
= +25°C, V
CM
= V
DD
/2,
V
OUT
≈ V
DD
/2, V
L
= V
DD
/2, R
L
= 1 M
Ω to V
L
and CS is tied low (refer to
Figure 1-2
and
Figure 1-3
).
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Offset
Input Offset Voltage
V
OS
-3
—
+3
mV
V
CM
= V
SS
Drift with Temperature
ΔV
OS
/
ΔT
A
—
±1.8
—
µV/°C
V
CM
= V
SS
, T
A
= -40°C to +85°C
ΔV
OS
/
ΔT
A
—
±10
—
µV/°C
V
CM
= V
SS
,
T
A
= +85°C to +125°C
Power Supply Rejection
PSRR
70
85
—
dB
V
CM
= V
SS
Input Bias Current and Impedance
Input Bias Current
I
B
—
1
—
pA
Industrial Temperature
I
B
—
20
100
pA
T
A
= +85°
Extended Temperature
I
B
—
1200
5000
pA
T
A
= +125°
Input Offset Current
I
OS
—
1
—
pA
Common Mode Input Impedance
Z
CM
—
10
13
||6
—
Ω||pF
Differential Input Impedance
Z
DIFF
—
10
13
||6
—
Ω||pF
Common Mode
Common-Mode Input Range
V
CMR
V
SS
−0.3
—
V
DD
+0.3
V
Common-Mode Rejection Ratio
CMRR
62
80
—
dB
V
DD
= 5V, V
CM
= -0.3V to 5.3V
CMRR
60
75
—
dB
V
DD
= 5V, V
CM
= 2.5V to 5.3V
CMRR
60
80
—
dB
V
DD
= 5V, V
CM
= -0.3V to 2.5V
Open-Loop Gain
DC Open-Loop Gain (large signal)
A
OL
95
115
—
dB
R
L
= 50 k
Ω to V
L
,
V
OUT
= 0.1V to V
DD
−0.1V
Output
Maximum Output Voltage Swing
V
OL
, V
OH
V
SS
+ 10
—
V
DD
− 10
mV
R
L
= 50 k
Ω to V
L
,
0.5V input overdrive
Linear Region Output Voltage Swing
V
OVR
V
SS
+ 100
—
V
DD
− 100
mV
R
L
= 50 k
Ω to V
L
,
A
OL
≥ 95 dB
Output Short Circuit Current
I
SC
—
2
—
mA
V
DD
= 1.4V
I
SC
—
20
—
mA
V
DD
= 5.5V
Power Supply
Supply Voltage
V
DD
1.4
—
6.0
V
Note 1
Quiescent Current per Amplifier
I
Q
0.3
0.6
1.0
µA
I
O
= 0
Note 1:
All parts with date codes February 2008 and later have been screened to ensure operation at V
DD
= 6.0V. However, the
other minimum and maximum specifications are measured at 1.8V and 5.5V
![background image](/sites/default/files/pdfhtml_microchip/21668d004.png)
MCP6141/2/3/4
DS21668D-page 4
© 2009 Microchip Technology Inc.
AC ELECTRICAL CHARACTERISTICS
MCP6143 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS
FIGURE 1-1:
Chip Select (CS) Timing
Diagram (MCP6143 only).
Electrical Characteristics: Unless otherwise indicated, V
DD
= +1.4V to +5.5V, V
SS
= GND, T
A
= +25°C, V
CM
= V
DD
/2,
V
OUT
≈ V
DD
/2, V
L
= V
DD
/2, R
L
= 1 M
Ω to V
L
, C
L
= 60 pF and CS is tied low (refer to
Figure 1-2
and
Figure 1-3
).
Parameters
Sym
Min
Typ
Max
Units
Conditions
AC Response
Gain Bandwidth Product
GBWP
—
100
—
kHz
Slew Rate
SR
—
24
—
V/ms
Phase Margin
PM
—
60
—
°
G = +10 V/V
Noise
Input Voltage Noise
E
ni
—
5.0
—
µV
P-P
f = 0.1 Hz to 10 Hz
Input Voltage Noise Density
e
ni
—
170
—
nV/
√Hz f = 1 kHz
Input Current Noise Density
i
ni
—
0.6
—
fA/
√Hz f = 1 kHz
Electrical Characteristics: Unless otherwise indicated, V
DD
= +1.4V to +5.5V, V
SS
= GND, T
A
= +25°C, V
CM
= V
DD
/2,
V
OUT
≈ V
DD
/2, V
L
= V
DD
/2, R
L
= 1 M
Ω to V
L
, and C
L
= 60 pF (refer to
Figure 1-2
and
Figure 1-3
).
Parameters
Sym
Min
Typ
Max
Units
Conditions
CS Low Specifications
CS Logic Threshold, Low
V
IL
V
SS
—
V
SS
+0.3
V
CS Input Current, Low
I
CSL
—
5
—
pA
CS = V
SS
CS High Specifications
CS Logic Threshold, High
V
IH
V
DD
–0.3
—
V
DD
V
CS Input Current, High
I
CSH
—
5
—
pA
CS = V
DD
CS Input High, GND Current
I
SS
—
-20
—
pA
CS = V
DD
Amplifier Output Leakage, CS High
I
OLEAK
—
20
—
pA
CS = V
DD
Dynamic Specifications
CS Low to Amplifier Output Turn-on Time
t
ON
—
2
50
ms
G = +1 V/V, CS = 0.3V to
V
OUT
= 0.9V
DD
/2
CS High to Amplifier Output High-Z
t
OFF
—
10
—
µs
G = +1 V/V, CS = V
DD
–0.3V to
V
OUT
= 0.1V
DD
/2
Hysteresis
V
HYST
—
0.6
—
V
V
DD
= 5.0V
V
IL
High-Z
t
ON
V
IH
CS
t
OFF
V
OUT
-20 pA
High-Z
I
SS
I
CS
5 pA (typical)
5 pA (typical)
-20 pA
-0.6 µA
(typical)
(typical)
(typical)
![background image](/sites/default/files/pdfhtml_microchip/21668d005.png)
© 2009 Microchip Technology Inc.
DS21668D-page 5
MCP6141/2/3/4
TEMPERATURE CHARACTERISTICS
1.1
Test Circuits
The test circuits used for the DC and AC tests are
shown in
Figure 1-2
and
Figure 1-2
. The bypass
capacitors are laid out according to the rules discussed
in Section 4.6 “Supply Bypass”.
FIGURE 1-2:
AC and DC Test Circuit for
Most Non-Inverting Gain Conditions.
FIGURE 1-3:
AC and DC Test Circuit for
Most Inverting Gain Conditions.
Electrical Characteristics: Unless otherwise indicated, V
DD
= +1.4V to +5.5V, V
SS
= GND.
Parameters
Sym. Min.
Typ. Max. Units
Conditions
Temperature Ranges
Specified Temperature Range
T
A
-40
—
+85
°C
Industrial Temperature parts
T
A
-40
—
+125
°C
Extended Temperature parts
Operating Temperature Range
T
A
-40
—
+125
°C
(Note 1)
Storage Temperature Range
T
A
-65
—
+150
°C
Thermal Package Resistances
Thermal Resistance, 5L-SOT-23
θ
JA
—
256
—
°C/W
Thermal Resistance, 6L-SOT-23
θ
JA
—
230
—
°C/W
Thermal Resistance, 8L-MSOP
θ
JA
—
206
—
°C/W
Thermal Resistance, 8L-PDIP
θ
JA
—
85
—
°C/W
Thermal Resistance, 8L-SOIC
θ
JA
—
163
—
°C/W
Thermal Resistance, 14L-PDIP
θ
JA
—
70
—
°C/W
Thermal Resistance, 14L-SOIC
θ
JA
—
120
—
°C/W
Thermal Resistance, 14L-TSSOP
θ
JA
—
100
—
°C/W
Note 1: The MCP6141/2/3/4 family of Industrial Temperature op amps operates over this extended range, but with
reduced performance. In any case, the internal Junction Temperature (T
J
) must not exceed the Absolute
Maximum specification of +150°C.
V
DD
MCP614X
R
G
R
F
R
N
V
OUT
V
IN
V
DD
/2
1 µF
C
L
R
L
V
L
0.1 µF
V
DD
MCP614X
R
G
R
F
R
N
V
OUT
V
DD
/2
V
IN
1 µF
C
L
R
L
V
L
0.1 µF
![background image](/sites/default/files/pdfhtml_microchip/21668d006.png)
MCP6141/2/3/4
DS21668D-page 6
© 2009 Microchip Technology Inc.
NOTES:
![background image](/sites/default/files/pdfhtml_microchip/21668d007.png)
© 2009 Microchip Technology Inc.
DS21668D-page 7
MCP6141/2/3/4
2.0
TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.4V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
≈ V
DD
/2,
V
L
= V
DD
/2, R
L
= 1 M
Ω to V
L
, C
L
= 60 pF, and CS is tied low.
FIGURE 2-1:
Input Offset Voltage.
FIGURE 2-2:
Input Offset Voltage Drift
with T
A
= -40°C to +85°C.
FIGURE 2-3:
Input Offset Voltage vs.
Common Mode Input Voltage with V
DD
= 1.4V.
FIGURE 2-4:
Input Offset Voltage Drift
with T
A
= +85°C to +125°C and V
DD
= 1.4V.
FIGURE 2-5:
Input Offset Voltage Drift
with T
A
= +85°C to +125°C and V
DD
= 5.5V.
FIGURE 2-6:
Input Offset Voltage vs.
Common Mode Input Voltage with V
DD
= 5.5V.
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0%
1%
2%
3%
4%
5%
6%
7%
8%
9%
10%
-3
-2
-1
0
1
2
3
Input Offset Voltage (mV)
Perc
en
ta
ge
o
f O
ccu
rre
nc
es
2396 Samples
V
CM
= V
SS
0%
1%
2%
3%
4%
5%
6%
7%
8%
9%
10%
11%
12%
-10 -8
-6
-4
-2
0
2
4
6
8
10
Input Offset Voltage Drift (µV/°C)
Per
cen
ta
g
e of
Occ
u
rr
en
ces
2267 Samples
T
A
= -40°C to +85°C
V
CM
= V
SS
-1000
-800
-600
-400
-200
0
200
400
600
800
1000
-0
.4
-0
.2
0.
0
0.
2
0.
4
0.
6
0.
8
1.
0
1.
2
1.
4
1.
6
1.
8
Common Mode Input Voltage (V)
Input
Offs
et Voltag
e (µV)
V
DD
= 1.4V
T
A
= +25°C
T
A
= -40°C
T
A
= +125°C
T
A
= +85°C
0%
1%
2%
3%
4%
5%
6%
7%
8%
9%
10%
11%
12%
-10 -8
-6
-4
-2
0
2
4
6
8
10
Input Offset Voltage Drift (µV/°C)
P
e
rc
entag
e
of Occ
u
rre
nce
s
234 Samples
Representative Lot
V
DD
= 1.4V
V
CM
= V
SS
T
A
= +85°C to +125°C
0%
2%
4%
6%
8%
10%
12%
14%
16%
-10 -8
-6
-4
-2
0
2
4
6
8
10
Input Offset Voltage Drift (µV/°C)
P
erce
n
ta
ge o
f Oc
curre
nc
es
234 Samples
Representative Lot
V
DD
= 5.5V
V
CM
= V
SS
T
A
= +85°C to +125°C
-1000
-800
-600
-400
-200
0
200
400
600
800
1000
-0
.5
0.
0
0.
5
1.
0
1.
5
2.
0
2.
5
3.
0
3.
5
4.
0
4.
5
5.
0
5.
5
6.
0
Common Mode Input Voltage (V)
Input
Offs
et
Volta
g
e (
µ
V)
V
DD
= 5.5V
T
A
= +25°C
T
A
= -40°C
T
A
= +125°C
T
A
= +85°C
![background image](/sites/default/files/pdfhtml_microchip/21668d008.png)
MCP6141/2/3/4
DS21668D-page 8
© 2009 Microchip Technology Inc.
Note: Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.4V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
≈ V
DD
/2,
V
L
= V
DD
/2, R
L
= 1 M
Ω to V
L
, C
L
= 60 pF, and CS is tied low.
FIGURE 2-7:
Input Offset Voltage vs.
Output Voltage.
FIGURE 2-8:
Input Noise Voltage Density
vs. Frequency.
FIGURE 2-9:
CMRR, PSRR vs.
Frequency.
FIGURE 2-10:
The MCP6141/2/3/4 Family
Shows No Phase Reversal.
FIGURE 2-11:
Input Noise Voltage Density
vs. Common Mode Input Voltage.
FIGURE 2-12:
CMRR, PSRR vs. Ambient
Temperature.
250
300
350
400
450
500
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Output Voltage (V)
In
put Offs
et V
o
lt
ag
e
(µ
V
)
V
DD
= 5.5V
V
DD
= 1.4V
100
1,000
0.1
1
10
100
1000
Frequency (Hz)
Input Noise Vo
lt
age Density
(nV
/√
Hz
)
20
30
40
50
60
70
80
90
100
1
10
100
1,000
10,000
Frequency (Hz)
CM
RR, P
S
RR
(dB
)
PSRR–
PSRR+
CMRR
Referred to Input
1
10
100
1k
10k
-1
0
1
2
3
4
5
6
0
5
10
15
20
25
Time (5 ms/div)
Inpu
t, Outp
ut Volta
g
es
(V)
V
IN
V
DD
= 5.0V
G = +11 V/V
V
OUT
0
50
100
150
200
250
300
-0
.5
0.
0
0.
5
1.
0
1.
5
2.
0
2.
5
3.
0
3.
5
4.
0
4.
5
5.
0
5.
5
Common Mode Input Voltage (V)
Input
Noise V
o
lt
age D
e
nsit
y
(n
V
/√
Hz)
f = 1 kHz
V
DD
= 5.0V
70
75
80
85
90
95
100
-50
-25
0
25
50
75
100
125
Ambient Temperature (°C)
P
S
R
R
, CM
RR (d
B)
PSRR (V
CM
= V
SS
)
CMRR (V
DD
= 5.0V,
V
CM
= -0.3V to +5.3V)
![background image](/sites/default/files/pdfhtml_microchip/21668d009.png)
© 2009 Microchip Technology Inc.
DS21668D-page 9
MCP6141/2/3/4
Note: Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.4V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
≈ V
DD
/2,
V
L
= V
DD
/2, R
L
= 1 M
Ω to V
L
, C
L
= 60 pF, and CS is tied low.
FIGURE 2-13:
Input Bias, Offset Currents
vs. Ambient Temperature.
FIGURE 2-14:
Open-Loop Gain, Phase vs.
Frequency.
FIGURE 2-15:
DC Open-Loop Gain vs.
Power Supply Voltage.
FIGURE 2-16:
Input Bias, Offset Currents
vs. Common Mode Input Voltage.
FIGURE 2-17:
DC Open-Loop Gain vs.
Load Resistance.
FIGURE 2-18:
DC Open-Loop Gain vs.
Output Voltage Headroom.
0.1
1
10
100
1000
10000
45
55
65
75
85
95
105 115 125
Ambient Temperature (°C)
Input
Bias
a
nd Off
set
C
u
rren
ts
(p
A)
| I
OS
|
I
B
V
DD
= 5.5V
V
CM
= V
DD
0.1
1
10
100
1k
10k
-40
-20
0
20
40
60
80
100
120
1.E-
02
1.E-
01
1.E+
00
1.E+
01
1.E+
02
1.E+
03
1.E+
04
1.E+
05
Frequency (Hz)
Ope
n
-Loo
p Gain (
d
B)
-240
-210
-180
-150
-120
-90
-60
-30
0
Ope
n
-L
oop Pha
se
(
°)
0.01
0.1
1
10
100
1k
10k 100k
Gain
Phase
80
90
100
110
120
130
140
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Power Supply Voltage (V)
DC Open-Loop Gain (dB)
R
L
= 50 kΩ
V
OUT
= 0.1V to V
DD
– 0.1V
0.1
1
10
100
1000
10000
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Common Mode Input Voltage (V)
In
p
u
t B
ias
, Of
fs
et
Cu
rre
n
ts
(p
A)
T
A
= +85°C
V
DD
= 5.5V
I
B
| I
OS
|
T
A
= +125°C
0.1
1
10
100
1k
10k
60
70
80
90
100
110
120
130
1.E+02
1.E+03
1.E+04
1.E+05
Load Resistance (Ω)
D
C
Open-Loop Gain (dB)
V
DD
= 1.4V
100
1k
10k
100k
V
OUT
= 0.1V to V
DD
– 0.1V
V
DD
= 5.5V
70
80
90
100
110
120
130
140
0.00
0.05
0.10
0.15
0.20
0.25
Output Voltage Headroom;
V
DD
– V
OH
or V
OL
– V
SS
(V)
DC Open-
Loop Gain (
d
B)
R
L
= 50 kΩ
V
DD
= 5.5V
V
DD
= 1.4V
![background image](/sites/default/files/pdfhtml_microchip/21668d010.png)
MCP6141/2/3/4
DS21668D-page 10
© 2009 Microchip Technology Inc.
Note: Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.4V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
≈ V
DD
/2,
V
L
= V
DD
/2, R
L
= 1 M
Ω to V
L
, C
L
= 60 pF, and CS is tied low.
FIGURE 2-19:
Channel to Channel
Separation vs. Frequency (MCP6142 and
MCP6144 only).
FIGURE 2-20:
Gain Bandwidth Product,
Phase Margin vs. Ambient Temperature with
V
DD
= 1.4V.
FIGURE 2-21:
Quiescent Current vs.
Power Supply Voltage.
FIGURE 2-22:
Gain Bandwidth Product,
Phase Margin vs. Common Mode Input Voltage.
FIGURE 2-23:
Gain Bandwidth Product,
Phase Margin vs. Ambient Temperature with
V
DD
= 5.5V.
FIGURE 2-24:
Output Short Circuit Current
vs. Power Supply Voltage.
80
90
100
110
120
130
140
1.E+03
1.E+04
Frequency (Hz)
C
h
anne
l-to-C
ha
nne
l
Se
para
tion (dB
)
1k
10k
Input Referred
0
10
20
30
40
50
60
70
80
90
-50
-25
0
25
50
75
100
125
Ambient Temperature (°C)
Gain Ba
nd
w
idth
Prod
uc
t
(k
Hz)
0
10
20
30
40
50
60
70
80
90
Ph
ase
M
arg
in
(
°)
PM
(G = +10)
GBWP
V
DD
= 1.4V
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power Supply Voltage (V)
Q
u
ies
cen
t C
u
rr
en
t
(µ
A/Amplifie
r)
T
A
= +125°C
T
A
= +85°C
T
A
= +25°C
T
A
= -40°C
0
10
20
30
40
50
60
70
80
90
100
110
120
-0
.5
0.
0
0.
5
1.
0
1.
5
2.
0
2.
5
3.
0
3.
5
4.
0
4.
5
5.
0
5.
5
Common Mode Input Voltage
Ga
in Bandwidt
h
Produ
c
t
(k
Hz
)
0
10
20
30
40
50
60
70
80
90
100
110
120
Ph
as
e
M
arg
in
(
°)
PM
(G = +10)
GBWP
V
DD
= 5.0V
0
10
20
30
40
50
60
70
80
90
-50
-25
0
25
50
75
100
125
Ambient Temperature (°C)
Ga
in Bandwidt
h
Produ
c
t
(k
Hz
)
0
10
20
30
40
50
60
70
80
90
Ph
as
e Ma
rg
in
(
°)
PM
(G = +10)
GBWP
V
DD
= 5.5V
0
5
10
15
20
25
30
35
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Ambient Temperature (°C)
O
u
tput
Sho
rt
C
irc
ui
t C
u
rren
t
Ma
gnitu
de (mA
)
T
A
= -40°C
T
A
= +25°C
T
A
= +85°C
T
A
= +125°C