500mA Low-Noise LDO Regulator

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 2017 Microchip Technology Inc.

DS20005720A-page 1

MIC5209

Features

• Output Voltage Range: 1.8V – 15V
• Meets Intel

®

 Slot 1 and Slot 2 Requirements

• Guaranteed 500 mA Output Over the Full 

Operating Temperature Range

• Low 500 mV Maximum Dropout Voltage at Full 

Load

• Extremely Tight Load and Line Regulation
• Thermally Efficient Surface-Mount Package
• Low Temperature Coefficient
• Current and Thermal Limiting
• Reversed-Battery Protection
• No-Load Stability
• 1% Output Accuracy
• Ultra-Low-Noise Capability in SOIC-8 and DDPAK
• Ultra-Small 3 mm × 3 mm DFN Package

Applications

• Pentium II Slot 1 and Slot 2 Support Circuits
• Laptop, Notebook, and Palmtop Computers
• Cellular Telephones
• Consumer and Personal Electronics
• SMPS Post-Regulator and DC/DC Modules
• High-Efficiency Linear Power Supplies

General Description

The MIC5209 is an efficient linear voltage regulator
with very low dropout voltage, typically 10 mV at light
loads and less than 500 mV at full load, with better than
1% output voltage accuracy.
Designed especially for hand-held, battery-powered
devices, the MIC5209 features low ground current to
help prolong battery life. An enable/shutdown pin on
the SOIC-8 and DDPAK versions can further improve
battery life with near-zero shutdown current.
Key features include reversed-battery protection,
current limiting, overtemperature shutdown,
ultra-low-noise capability (SOIC-8 and DDPAK
versions), and is available in thermally efficient
packaging. The MIC5209 is available in adjustable or
fixed output voltages.

Typical Application Circuits

3.3V N

OMINAL

 I

NPUT

 S

LOT

 1 

P

OWER

 S

UPPLY

U

LTRA

-L

OW

 N

OISE

5V R

EGULATOR

MIC5209-2.5YS

V

IN

• 3.0V

0.1μF

V

OUT

2.5V ±1%

22μF
TANTALUM

1

2

3

MIC5209-5.0YM

V

IN

6.0V

V

OUT

5.0V

22μF

TANTALUM

1

2

3

4

5

6

7

8

ENABLE

SHUTDOWN

470pF
(OPTIONAL)

500 mA Low-Noise LDO Regulator

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MIC5209

DS20005720A-page 2

 2017 Microchip Technology Inc.

Package Types

MIC5209-

X

.

X

YS

SOT-223 (S)

F

IXED

 V

OLTAGES

 (T

OP

 V

IEW

)

MIC5209YML

8-P

IN

 3

X

3 DFN (ML)

A

DJUSTABLE

 V

OLTAGES

 (T

OP

 V

IEW

)

1

IN

IN

OUT

OUT

8

EN

GND

ADJ

NC

7

6

5

2

3

4

5209

YWW

Y

PART
IDENTIFICATION

EP

IN

OUT

GND

1

3

2

TAB

GND

MIC5209-

X

.

X

YM

SOIC-8 (M)

F

IXED

 V

OLTAGES

 (T

OP

 V

IEW

)

1

2

3

4

8

7

6

5

GND

GND

GND

GND

EN

IN

OUT

BYP

MIC5209-

X

.

X

YU

DDPAK (U)

F

IXED

 V

OLTAGES

 (T

OP

 V

IEW

)

5 BYP
4 OUT
3 GND
2 IN
1 EN

D

N

G

B

A

T

MIC5209YM

SOIC-8 (M)

A

DJUSTABLE

 V

OLTAGES

 (T

OP

 V

IEW

)

MIC5209YU

DDPAK (U)

A

DJUSTABLE

 V

OLTAGES

 (T

OP

 V

IEW

)

1

2

3

4

8

7

6

5

GND

GND

GND

GND

EN

N

IN

OUT

OUT

J

ADJ

5 ADJ
4 OUT
3 GND
2 IN
1 EN

D

N

G

B

A

T

AA

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 2017 Microchip Technology Inc.

DS20005720A-page 3

MIC5209

Functional Diagrams

L

OW

-N

OISE

F

IXED

 R

EGULATOR

(SOT-223 V

ERSION

 O

NLY

)

U

LTRA

-L

OW

-N

OISE

F

IXED

 R

EGULATOR

V

IN

IN

MIC5209-x.xYS

OUT

V

OUT

C

OUT

GND

~2.0V – 2.1V

–40ºC

BANDGAP

REFERENCE

EN

CURRENT-LIMIT

THERMAL SHUTDOWN

V

IN

IN

MIC5209-x.xYM/U

OUT

V

OUT

C

OUT

GND

BANDGAP

REFERENCE

EN

CURRENT-LIMIT

THERMAL SHUTDOWN

C

BYP

(OPTIONAL)

BYP

U

LTRA

-L

OW

-N

OISE

A

DJUSTABLE

 R

EGULATOR

V

IN

IN

MIC5209YM/U (ADJUSTABLE)

OUT

V

OUT

C

OUT

GND

BANDGAP

REFERENCE

EN

CURRENT-LIMIT

THERMAL SHUTDOWN

C

BYP

(OPTIONAL)

ADJ

R1

R2

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MIC5209

DS20005720A-page 4

 2017 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings †

Supply Voltage (V

IN

).................................................................................................................................... –20V to +20V

Power Dissipation (P

D

) (

Note 1

).............................................................................................................Internally Limited

ESD Rating (SOT-223)..................................................................................................................... 2 kV HBM/300V MM
ESD Rating (DFN, SOIC-8).............................................................................................................. 5 kV HBM/100V MM

Operating Ratings ‡

Supply Voltage (V

IN

)................................................................................................................................... +2.5V to +16V

Adjustable Output Voltage Range (V

OUT

) .................................................................................................. +1.8V to +15V

 Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability.
‡ Notice: The device is not guaranteed to function outside its operating ratings.

Note 1: The maximum allowable power dissipation at any T

A

 (ambient temperature) is P

D(max)

 = (T

J(max)

 – T

A

) x θ

JA

.

Exceeding the maximum allowable power dissipation will cause excessive die temperature, and the regula-
tor will go into thermal shutdown. See 

Table 4-1

 and the 

Thermal Considerations

 sub-section in 

Applications

Information

 for details.

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DS20005720A-page 5

MIC5209

TABLE 1-1:

ELECTRICAL CHARACTERISTICS (

Note 1

)

Electrical Characteristics: V

IN

 = V

OUT

 + 1V; I

L

 = 100 μA; T

J

 = +25°C, bold values indicate –40°C ≤ T

J

 ≤ +125°C 

except 0°C ≤ T

J

 ≤ +125°C for 1.8V ≤ V

OUT

 ≤ 2.5V, unless noted.

Parameter

Symbol

Min.

Typ.

Max.

Units

Conditions

Output Voltage Accuracy

V

OUT

–1

1

%

Variation from nominal V

OUT

–2

2

Output Voltage 
Temperature Coefficient

∆V

OUT

/

∆T

40

ppm/°C

Note 2

Line Regulation

∆V

OUT

/

V

OUT

0.009

0.05

%

V

IN

 = V

OUT

 + 1V to 16V

0.10

Load Regulation

∆V

OUT

/

V

OUT

0.05

0.5

%

I

L

 = 100 µA to 500 mA, 

Note 3

0.7

Dropout Voltage, (

Note 4

)

V

IN 

– 

V

OUT

10

60

mV

I

L

 = 100 µA

80

115

175

I

L

 = 50 mA

250

165

300

I

L

 = 150 mA

400

350

500

I

L

 = 500 mA

600

Ground Pin Current 
(

Note 5

Note 6

)

I

GND

80

130

µA

V

EN

 ≥ 3.0V, I

OUT

 = 100 µA

170

350

650

V

EN

 ≥ 3.0V, I

OUT

 = 50 mA

900

1.8

2.5

mA

V

EN

 ≥ 3.0V, I

OUT

 = 150 mA

3.0

8

20

V

EN

 ≥ 3.0V, I

OUT

 = 500 mA

25

Ground Pin Quiescent 
Current, (

Note 6

)

I

GND

0.05

3

µA

V

EN

 ≤ 0.4V (shutdown)

0.10

8

V

EN

 ≤ 0.18V (shutdown)

Ripple Rejection

PSRR

75

dB

f = 120 Hz

Current Limit

I

LIMIT

700

900

mA

V

OUT

 = 0V

1000

Thermal Regulation

∆V

OUT

/

∆P

D

0.05

%/W

Note 7

Output Noise, (

Note 8

)

e

n

500

nV √Hz

V

OUT

 = 2.5V, I

OUT

 = 50 mA

C

OUT

 = 2.2 µF, C

BYP

 = 0

300

I

OUT

 = 50 mA, C

OUT

 = 2.2 µF

C

BYP

 = 470 pF

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MIC5209

DS20005720A-page 6

 2017 Microchip Technology Inc.

Enable Input

Enable Input Logic-Low 
Voltage

V

ENL

0.4

V

V

EN

 = Logic-low (Regulator shutdown)

0.18

2.0

V

V

EN

 = Logic-high (Regulator enabled)

Enable Input Current

I

ENL

0.01

–1

µA

V

ENL

 ≤ 0.4V

0.01

–2

V

ENL

 ≤ 0.18V

I

ENH

5

20

µA

V

ENH

 ≥ 2.0V

25

30

V

ENH

 ≥ 16V

50

Note 1: Specification for packaged product only.

2: Output voltage temperature coefficient is defined as the worst-case voltage change divided by the total 

temperature range.

3: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are 

tested for load regulation in the load range from 100 µA to 500 mA. Changes in output voltage due to heat-
ing effects are covered by the thermal regulation specification.

4: Dropout Voltage is defined as the input to output differential at which the output voltage drops 2% below its 

nominal value measured at 1V differential.

5: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current 

drawn from the supply is the sum of the load current plus the ground pin current.

6: V

EN

 is the voltage externally applied to devices with the EN (enable) input pin. SOIC-8 (M) and DDPAK (U) 

packages only.

7: Thermal regulation is the change in output voltage at a time “t” after a change in power dissipation is 

applied, excluding load or line regulation effects. Specifications are for a 500 mA load pulse at V

IN

 = 16V 

for t = 10 ms.

8: C

BYP

 is an optional, external bypass capacitor connected to devices with a BYP (bypass) or ADJ (adjust) 

pin. SOIC-8 (M) and DDPAK (U) packages only.

TABLE 1-1:

ELECTRICAL CHARACTERISTICS (

Note 1

) (CONTINUED)

Electrical Characteristics: V

IN

 = V

OUT

 + 1V; I

L

 = 100 μA; T

J

 = +25°C, bold values indicate –40°C ≤ T

J

 ≤ +125°C 

except 0°C ≤ T

J

 ≤ +125°C for 1.8V ≤ V

OUT

 ≤ 2.5V, unless noted.

Parameter

Symbol

Min.

Typ.

Max.

Units

Conditions

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DS20005720A-page 7

MIC5209

TEMPERATURE SPECIFICATIONS (

Note 1

)

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Temperature Ranges
Storage Temperature Range

T

S

–65

+150

°C

Lead Temperature

+260

°C

Soldering, 5 sec.

Junction Temperature 

T

J

–40

+125

°C

2.5V ≤ V

OUT

 ≤ 15V

Junction Temperature

T

J

0

+125

°C

1.8V ≤ V

OUT

 < 2.5V

Package Thermal Resistance

Thermal Resistance SOT-223

θ

JA

62

°C/W

EIA/JEDEC 
JES51-751-7,
4 Layer Board

θ

JC

15

°C/W

Thermal Resistance SOIC-8

θ

JA

50

°C/W

See 

Thermal 

Considerations

 for more 

information.

θ

JC

25

°C/W

Thermal Resistance DDPAK

θ

JA

31.4

°C/W

EIA/JEDEC 
JES51-751-7,
4 Layer Board

θ

JC

3

°C/W

Thermal Resistance 3 mm x 3 mm 
DFN

θ

JA

64

°C/W

EIA/JEDEC 
JES51-751-7,
4 Layer Board

θ

JC

12

°C/W

Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable 

junction temperature and the thermal resistance from junction to air (i.e., T

A

, T

J

JA

). Exceeding the 

maximum allowable power dissipation will cause the device operating junction temperature to exceed the 
maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability.

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MIC5209

DS20005720A-page 8

 2017 Microchip Technology Inc.

2.0

TYPICAL PERFORMANCE CURVES

FIGURE 2-1:

Power Supply Rejection 

Ratio.

FIGURE 2-2:

Power Supply Rejection 

Ratio.

FIGURE 2-3:

Power Supply Rejection 

Ratio.

FIGURE 2-4:

Power Supply Rejection 

Ratio.

FIGURE 2-5:

Power Supply Rejection 

Ratio.

FIGURE 2-6:

Power Supply Rejection 

Ratio.

Note:

The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

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DS20005720A-page 9

MIC5209

FIGURE 2-7:

Power Supply Ripple 

Rejection vs. Voltage Drop.

FIGURE 2-8:

Power Supply Ripple 

Rejection vs. Voltage Drop.

FIGURE 2-9:

Noise Performance.

FIGURE 2-10:

Noise Performance.

FIGURE 2-11:

Noise Performance.

FIGURE 2-12:

Dropout Voltage vs. Output 

Current.

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MIC5209

DS20005720A-page 10

 2017 Microchip Technology Inc.

FIGURE 2-13:

Ground Current vs. Output 

Current.

FIGURE 2-14:

Ground Current vs. Supply 

Voltage.

FIGURE 2-15:

Ground Current vs. Supply 

Voltage.

Maker
Microchip Technology Inc.
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