© 2008 Microchip Technology Inc.
DS21882D-page 1
MCP6241/1R/1U/2/4
Features
• Gain Bandwidth Product: 550 kHz (typical)
• Supply Current: I
Q
= 50 µA (typical)
• Supply Voltage: 1.8V to 5.5V
• Rail-to-Rail Input/Output
• Extended Temperature Range: -40°C to +125°C
• Available in 5-pin SC-70 and SOT-23 packages
Applications
• Automotive
• Portable Equipment
• Photodiode (Transimpedance) Amplifier
• Analog Filters
• Notebooks and PDAs
• Battery-Powered Systems
Design Aids
• SPICE Macro Models
• Mindi™ Circuit Designer & Simulator
• Microchip Advanced Part Selector (MAPS)
• Analog Demonstration and Evaluation Boards
• Application Notes
Typical Application
Description
The Microchip Technology Inc. MCP6241/1R/1U/2/4
operational amplifiers (op amps) provide wide
bandwidth for the quiescent current. The MCP6241/1R/
1U/2/4 has a 550 kHz gain bandwidth product and 68°
(typical) phase margin. This family operates from a
single supply voltage as low as 1.8V, while drawing
50 µA (typical) quiescent current. In addition, the
MCP6241/1R/1U/2/4 family supports rail-to-rail input
and output swing, with a common mode input voltage
range of V
DD
+ 300 mV to V
SS
– 300 mV. These op
amps are designed in one of Microchip’s advanced
CMOS processes.
Package Types
MCP6241
V
OUT
V
IN2
–
+
V
IN1
R
G2
R
G1
R
F
R
Z
V
DD
R
X
R
Y
Summing Amplifier Circuit
4
MCP6241
1
2
3
–
+
5 V
DD
V
IN
–
V
OUT
V
SS
V
IN
+
SOT-23-5
4
1
2
3
+
5 V
DD
V
OUT
V
SS
MCP6241R
SOT-23-5
4
1
2
3
–
+
5 V
SS
V
IN
–
V
OUT
V
DD
V
IN
+
MCP6241U
SC-70-5, SOT-23-5
4
1
2
3
–
+
5 V
DD
V
OUT
V
IN
+
V
SS
V
IN
–
V
IN
+
V
IN
–
MCP6241
V
SS
V
DD
V
OUT
1
2
3
4
8
7
6
5
–
+
NC
NC
NC
PDIP, SOIC, MSOP
MCP6242
PDIP, SOIC, MSOP
1
2
3
4
8
7
6
5
-
+ -
+
V
INA
_
V
INA
+
V
SS
V
OUTA
V
OUTB
V
DD
V
INB
_
V
INB
+
MCP6244
V
INA
+
V
INA
–
V
SS
1
2
3
4
14
13
12
11
-
V
OUTA
+ -
+
V
DD
V
OUTD
V
IND
–
V
IND
+
10
9
8
5
6
7
V
OUTB
V
INB
–
V
INB
+
V
INC
+
V
INC
–
V
OUTC
+
-
-
+
PDIP, SOIC, TSSOP
MCP6241
2x3 DFN*
V
IN
+
V
IN
–
V
SS
V
DD
V
OUT
1
2
3
4
8
7
6
5 NC
NC
NC
EP
9
* Includes Exposed Thermal Pad (EP); see
Table 3-1
.
50 µA, 550 kHz Rail-to-Rail Op Amp
MCP6241/1R/1U/2/4
DS21882D-page 2
© 2008 Microchip Technology Inc.
NOTES:
© 2008 Microchip Technology Inc.
DS21882D-page 3
MCP6241/1R/1U/2/4
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
DD
– V
SS
........................................................................7.0V
Current at Analog Input Pins (V
IN
+, V
IN
–) .....................±2 mA
Analog Inputs (V
IN
+, V
IN
–) †† ........ V
SS
– 1.0V to V
DD
+ 1.0V
All Other Inputs and Outputs ......... V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input Voltage ...................................... |V
DD
– V
SS
|
Output Short Circuit Current ................................ Continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature .................................. –65° C to +150°C
Maximum Junction Temperature (T
J
) ......................... .+150°C
ESD Protection On All Pins (HBM; MM)
.............. ≥ 4 kV; 300V
† Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
†† See Section 4.1.2 “Input Voltage and Current Limits”.
DC ELECTRICAL CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND,
V
CM
= V
DD
/2, R
L
= 100 k
Ω to V
DD
/2 and V
OUT
≈
V
DD
/2.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Offset
Input Offset Voltage
V
OS
-5.0
—
+5.0
mV
V
CM
= V
SS
Extended Temperature
V
OS
-7.0
—
+7.0
mV
T
A
= -40°C to +125°C,
V
CM
= V
SS
(Note 1)
Input Offset Drift with
Temperature
ΔV
OS
/
ΔT
A
—
±3.0
—
µV/°C T
A
= -40°C to +125°C,
V
CM
= V
SS
Power Supply Rejection
PSRR
—
83
—
dB
V
CM
= V
SS
Input Bias Current and Impedance
Input Bias Current:
I
B
—
±1.0
—
pA
At Temperature
I
B
—
20
—
pA
T
A
= +85°C
At Temperature
I
B
—
1100
—
pA
T
A
= +125°C
Input Offset Current
I
OS
—
±1.0
—
pA
Common Mode Input Impedance
Z
CM
—
10
13
||6
—
Ω||pF
Differential Input Impedance
Z
DIFF
—
10
13
||3
—
Ω||pF
Common Mode
Common Mode Input Range
V
CMR
V
SS
– 0.3
—
V
DD
+ 0.3
V
Common Mode Rejection Ratio
CMRR
60
75
—
dB
V
CM
= -0.3V to 5.3V, V
DD
= 5V
Open-Loop Gain
DC Open-Loop Gain
(large signal)
A
OL
90
110
—
dB
V
OUT
= 0.3V to V
DD
– 0.3V,
V
CM
= V
SS
Output
Maximum Output Voltage Swing
V
OL
, V
OH
V
SS
+
35
—
V
DD
– 35
mV
R
L
= 10 k
Ω, 0.5V Input
Overdrive
Output Short-Circuit Current
I
SC
—
±6
—
mA
V
DD
= 1.8V
I
SC
—
±23
—
mA
V
DD
= 5.5V
Power Supply
Supply Voltage
V
DD
1.8
—
5.5
V
Quiescent Current per Amplifier
I
Q
30
50
70
µA
I
O
= 0, V
CM
= V
DD
– 0.5V
Note 1: The SC-70 package is only tested at +25°C.
MCP6241/1R/1U/2/4
DS21882D-page 4
© 2008 Microchip Technology Inc.
AC ELECTRICAL CHARACTERISTICS
TEMPERATURE CHARACTERISTICS
1.1
Test Circuits
The test circuits used for the DC and AC tests are
shown in
Figure 1-1
and
Figure 1-2
. The bypass
capacitors are laid out according to the rules discussed
in
Section 4.6 “PCB Surface Leakage”.
FIGURE 1-1:
AC and DC Test Circuit for
Most Non-Inverting Gain Conditions.
FIGURE 1-2:
AC and DC Test Circuit for
Most Inverting Gain Conditions.
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8 to 5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
≈ V
DD
/2, R
L
= 10 k
Ω to V
DD
/2 and C
L
= 60 pF.
Parameters
Sym
Min
Typ
Max
Units
Conditions
AC Response
Gain Bandwidth Product
GBWP
—
550
—
kHz
Phase Margin
PM
—
68
—
°
G = +1 V/V
Slew Rate
SR
—
0.30
—
V/µs
Noise
Input Noise Voltage
E
ni
—
10
—
µV
P-P
f = 0.1 Hz to 10 Hz
Input Noise Voltage Density
e
ni
—
45
—
nV/
√Hz f = 1 kHz
Input Noise Current Density
i
ni
—
0.6
—
fA/
√Hz f = 1 kHz
Electrical Characteristics: Unless otherwise indicated, V
DD
= +1.8V to +5.5V and V
SS
= GND.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Extended Temperature Range
T
A
-40
—
+125
°C
Operating Temperature Range
T
A
-40
—
+125
°C
(Note)
Storage Temperature Range
T
A
-65
—
+150
°C
Thermal Package Resistances
Thermal Resistance, 5L-SC70
θ
JA
—
331
—
°C/W
Thermal Resistance, 5L-SOT-23
θ
JA
—
256
—
°C/W
Thermal Resistance, 8L-DFN (2x3)
θ
JA
—
84.5
—
°C/W
Thermal Resistance, 8L-MSOP
θ
JA
—
206
—
°C/W
Thermal Resistance, 8L-PDIP
θ
JA
—
85
—
°C/W
Thermal Resistance, 8L-SOIC
θ
JA
—
163
—
°C/W
Thermal Resistance, 14L-PDIP
θ
JA
—
70
—
°C/W
Thermal Resistance, 14L-SOIC
θ
JA
—
120
—
°C/W
Thermal Resistance, 14L-TSSOP
θ
JA
—
100
—
°C/W
Note:
The internal Junction Temperature (T
J
) must not exceed the Absolute Maximum specification of +150°C.
V
DD
MCP624X
R
G
R
F
R
N
V
OUT
V
IN
V
DD
/2
1 µF
C
L
R
L
V
L
0.1 µF
V
DD
MCP624X
R
G
R
F
R
N
V
OUT
V
DD
/2
V
IN
1 µF
C
L
R
L
V
L
0.1 µF
© 2008 Microchip Technology Inc.
DS21882D-page 5
MCP6241/1R/1U/2/4
2.0
TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
≈ V
DD
/2,
R
L
= 100 k
Ω to V
DD
/2 and C
L
= 60 pF.
FIGURE 2-1:
Input Offset Voltage.
FIGURE 2-2:
PSRR, CMRR vs.
Frequency.
FIGURE 2-3:
Input Bias Current at +85°C.
FIGURE 2-4:
CMRR, PSRR vs. Ambient
Temperature.
FIGURE 2-5:
Open-Loop Gain, Phase vs.
Frequency.
FIGURE 2-6:
Input Bias Current at
+125°C.
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0%
2%
4%
6%
8%
10%
12%
14%
16%
18%
20%
-5
-4
-3
-2
-1
0
1
2
3
4
5
Input Offset Voltage (mV)
P
e
rc
e
n
ta
ge
of
O
c
c
u
rr
e
nc
e
s
630 Samples
V
CM
= V
SS
20
30
40
50
60
70
80
90
100
110
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
Frequency (Hz)
P
S
RR
, C
M
RR
(
d
B)
10
1k
10k
100k
100
PSRR+
PSRR-
CMRR
0%
5%
10%
15%
20%
25%
0
6
12
18
24
30
36
42
Input Bias Current (pA)
P
e
rc
e
n
ta
ge
of
O
c
c
u
rr
e
nc
e
s
180 Samples
V
CM
= V
DD
/2
T
A
= +85°C
70
75
80
85
90
-50
-25
0
25
50
75
100
125
Ambient Temperature (°C)
CM
R
R
, P
S
R
R
(d
B
)
PSRR (V
CM
= V
SS
)
CMRR (V
CM
= -0.3V to +5.3V,
V
DD
= 5.0V)
-20
0
20
40
60
80
100
120
1.E-
01
1.E+
00
1.E+
01
1.E+
02
1.E+
03
1.E+
04
1.E+
05
1.E+
06
1.E+
07
Frequency (Hz)
O
p
e
n
-Loop
G
a
in
(
d
B)
-210
-180
-150
-120
-90
-60
-30
0
O
p
en
-L
o
o
p
P
h
as
e
(
°)
R
L
= 10.0 kΩ
V
CM
= V
DD
/2
0.1
1
10 100 1k 10k 100k 1M 10M
Gain
Phase
0%
5%
10%
15%
20%
25%
30%
0.
0
0.
2
0.
4
0.
6
0.
8
1.
0
1.
2
1.
4
1.
6
1.
8
2.
0
Input Bias Current (nA)
P
e
rc
e
n
ta
ge
of
O
c
c
u
rr
e
nc
e
s
180 Samples
V
CM
= V
DD
/2
T
A
= +125°C
MCP6241/1R/1U/2/4
DS21882D-page 6
© 2008 Microchip Technology Inc.
Note: Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
≈ V
DD
/2,
R
L
= 100 k
Ω to V
DD
/2 and C
L
= 60 pF.
FIGURE 2-7:
Input Noise Voltage Density
vs. Frequency.
FIGURE 2-8:
Input Offset Voltage vs.
Common Mode Input Voltage at V
DD
= 1.8V.
FIGURE 2-9:
Input Offset Voltage vs.
Common Mode Input Voltage at V
DD
= 5.5V.
FIGURE 2-10:
Input Offset Voltage Drift.
FIGURE 2-11:
Input Offset Voltage vs.
Output Voltage.
FIGURE 2-12:
Output Short-Circuit Current
vs. Ambient Temperature.
10
100
1,000
10,000
1.E-01 1.E+0
0
1.E+0
1
1.E+0
2
1.E+0
3
1.E+0
4
1.E+0
5
Frequency (Hz)
Input
N
o
is
e
V
o
lt
a
g
e
D
e
ns
it
y
(n
V
/√
Hz
)
0.1
100
1k
10k
100k
10
1
-300
-200
-100
0
100
200
300
-0
.4
-0.
2
0.
0
0.
2
0.
4
0.
6
0.
8
1.
0
1.
2
1.
4
1.
6
1.
8
2.
0
2.
2
Common Mode Input Voltage (V)
Input
Offs
e
t
V
o
lt
a
g
e
(
µ
V
)
V
DD
= 1.8V
T
A
= -40°C
T
A
= +25°C
T
A
= +85°C
T
A
= +125°C
-200
-100
0
100
200
300
400
-0
.5
0.0
0.
5
1.0
1.5
2.
0
2.5
3.
0
3.5
4.0
4.
5
5.0
5.5
6.
0
Common Mode Input Voltage (V)
Input
O
ffs
e
t V
o
lt
a
g
e
(µ
V
)
V
DD
= 5.5V
T
A
= -40°C
T
A
= +25°C
T
A
= +85°C
T
A
= +125°C
0%
2%
4%
6%
8%
10%
12%
14%
16%
18%
20%
-1
2
-1
0
-8
-6
-4
-2
0
2
4
6
8
10
12
Input Offset Voltage Drift (µV/°C)
P
e
rc
e
n
ta
ge
of O
c
c
u
rr
e
nc
e
s
628 Samples
V
CM
= V
SS
T
A
= -40°C to +125°C
300
350
400
450
500
550
600
650
700
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Output Voltage (V)
Input
O
ff
s
e
t V
o
lt
a
g
e
(
µ
V
)
V
DD
= 1.8V
V
CM
= V
SS
V
DD
= 5.5V
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
35
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power Supply Voltage (V)
S
hor
t
Ci
rc
u
it
C
u
rr
e
n
t (m
A
)
T
A
= +125°C
T
A
= +85°C
T
A
= +25°C
T
A
= -40°C
+I
SC
-I
SC
© 2008 Microchip Technology Inc.
DS21882D-page 7
MCP6241/1R/1U/2/4
Note: Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
≈ V
DD
/2,
R
L
= 100 k
Ω to V
DD
/2 and C
L
= 60 pF.
FIGURE 2-13:
Slew Rate vs. Ambient
Temperature.
FIGURE 2-14:
Output Voltage Headroom
vs. Output Current Magnitude.
FIGURE 2-15:
Maximum Output Voltage
Swing vs. Frequency.
FIGURE 2-16:
Small-Signal, Non-Inverting
Pulse Response.
FIGURE 2-17:
Large-Signal, Non-Inverting
Pulse Response.
FIGURE 2-18:
Quiescent Current vs.
Power Supply Voltage.
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
-50
-25
0
25
50
75
100
125
Ambient Temperature (°C)
S
lew
R
a
te
(V
/µ
s)
Falling Edge
Rising Edge
V
DD
= 1.8V
V
DD
= 5.5V
1
10
100
1,000
1.E-02
1.E-01
1.E+00
1.E+01
Output Current Magnitude (A)
O
u
tput V
o
lt
a
g
e
H
e
a
d
room
(m
V)
V
DD
– V
OH
10m
1m
V
OL
– V
SS
100µ
10µ
0.1
1
10
1.E+03
1.E+04
1.E+05
1.E+06
Frequency (Hz)
Out
put
V
o
lt
a
g
e
S
w
ing (V
P-
P
)
V
DD
= 5.5V
V
DD
= 1.8V
1k
10k
100k
1M
Time (1 µs/div)
O
u
tp
u
t
Vo
lt
ag
e
(
1
0
m
V
/d
iv
)
G = +1 V/V
R
L
= 10 kΩ
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Time (10 µs/div)
O
u
tput
V
o
lt
a
g
e
(V
)
V
DD
= 5.0V
G = +1 V/V
0
10
20
30
40
50
60
70
80
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power Supply Voltage (V)
Q
u
iesc
en
t C
u
rr
en
t
pe
r Ampl
if
ie
r (µA
)
V
CM
= 0.9V
DD
T
A
= +125°C
T
A
= +85°C
T
A
= +25°C
T
A
= -40°C
MCP6241/1R/1U/2/4
DS21882D-page 8
© 2008 Microchip Technology Inc.
Note: Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
≈ V
DD
/2,
R
L
= 100 k
Ω to V
DD
/2 and C
L
= 60 pF.
FIGURE 2-19:
Measured Input Current vs.
Input Voltage (below V
SS
).
1.E-12
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0
Input Voltage (V)
Inpu
t Cu
rrent
M
ag
n
it
ud
e (A
)
+125°C
+85°C
+25°C
-40°C
10m
1m
100µ
10µ
1µ
100n
10n
1n
100p
10p
1p
© 2008 Microchip Technology Inc.
DS21882D-page 9
MCP6241/1R/1U/2/4
3.0
PIN DESCRIPTIONS
Descriptions of the pins are listed in
Table 3-1
(single op amps) and
Table 3-2
(dual and quad op amps).
TABLE 3-1:
PIN FUNCTION TABLE FOR SINGLE OP AMPS
TABLE 3-2:
PIN FUNCTION TABLE FOR DUAL AND QUAD OP AMPS
3.1
Analog Outputs
The output pins are low-impedance voltage sources.
3.2
Analog Inputs
The non-inverting and inverting inputs are high-
impedance CMOS inputs with low bias currents.
3.3
Power Supply (V
SS
and V
DD
)
The positive power supply (V
DD
) is 1.8V to 5.5V higher
than the negative power supply (V
SS
). For normal
operation, the other pins are between V
SS
and V
DD
.
Typically, these parts are used in a single (positive)
supply configuration. In this case, V
SS
is connected to
ground and V
DD
is connected to the supply. V
DD
will
need bypass capacitors.
3.4
Exposed Thermal Pad (EP)
There is an internal electrical connection between the
Exposed Thermal Pad (EP) and the V
SS
pin; they must
be connected to the same potential on the Printed
Circuit Board (PCB).
MCP6241
MCP6241R
MCP6241U
Symbol
Description
DFN
MSOP, PDIP,
SOIC
SOT-23-5
SOT-23-5
SOT-23-5,
SC-70
6
6
1
1
4
V
OUT
Analog Output
2
2
4
4
3
V
IN
–
Inverting Input
3
3
3
3
1
V
IN
+
Non-inverting Input
7
7
5
2
5
V
DD
Positive Power Supply
4
4
2
5
2
V
SS
Negative Power Supply
1, 5, 8
1, 5, 8
—
—
—
NC
No Internal Connection
9
—
—
—
—
EP
Exposed Thermal Pad (EP);
must be connected to V
SS
.
MCP6242
MCP6244
Symbol
Description
MSOP, PDIP, SOIC
PDIP, SOIC, TSSOP
1
1
V
OUTA
Analog Output (op amp A)
2
2
V
INA
–
Inverting Input (op amp A)
3
3
V
INA
+
Non-inverting Input (op amp A)
8
4
V
DD
Positive Power Supply
5
5
V
INB
+
Non-inverting Input (op amp B)
6
6
V
INB
–
Inverting Input (op amp B)
7
7
V
OUTB
Analog Output (op amp B)
—
8
V
OUTC
Analog Output (op amp C)
—
9
V
INC
–
Inverting Input (op amp C)
—
10
V
INC
+
Non-inverting Input (op amp C)
4
11
V
SS
Negative Power Supply
—
12
V
IND
+
Non-inverting Input (op amp D)
—
13
V
IND
–
Inverting Input (op amp D)
—
14
V
OUTD
Analog Output (op amp D)
MCP6241/1R/1U/2/4
DS21882D-page 10
© 2008 Microchip Technology Inc.
NOTES: