© 2007 Microchip Technology Inc.
DS21335E-page 1
TC1014/TC1015/TC1185
Features:
• Low Supply Current (50 µA, typical)
• Low Dropout Voltage
• Choice of 50 mA (TC1014), 100 mA (TC1015)
and 150 mA (TC1185) Output
• High Output Voltage Accuracy
• Standard or Custom Output Voltages
• Power-Saving Shutdown Mode
• Reference Bypass Input for Ultra Low-Noise
Operation
• Overcurrent and Overtemperature Protection
• Space-Saving 5-Pin SOT-23 Package
• Pin-Compatible Upgrades for Bipolar Regulators
• Standard Output Voltage Options:
- 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V,
3.3V, 3.6V, 4.0V, 5.0V
Applications:
• Battery-Operated Systems
• Portable Computers
• Medical Instruments
• Instrumentation
• Cellular/GSM/PHS Phones
• Linear Post-Regulator for SMPS
• Pagers
Typical Application
General Description
The TC1014/TC1015/TC1185 are high accuracy
(typically ±0.5%) CMOS upgrades for older (bipolar)
Low Dropout Regulators (LDOs) such as the LP2980.
Designed specifically for battery-operated systems, the
devices’ CMOS construction eliminates wasted ground
current, significantly extending battery life. Total supply
current is typically 50 µA at full load (20 to 60 times
lower than in bipolar regulators).
The devices’ key features include ultra low-noise
operation (plus optional Bypass input), fast response to
step changes in load, and very low dropout voltage,
typically 85 mV (TC1014), 180 mV (TC1015), and
270 mV (TC1185) at full-load. Supply current is
reduced to 0.5 µA (max) and V
OUT
falls to zero when
the shutdown input is low. The devices incorporate both
overtemperature and overcurrent protection.
The TC1014/TC1015/TC1185 are stable with an output
capacitor of only 1 µF and have a maximum output
current of 50 mA, 100 mA and 150 mA, respectively.
For higher output current regulators, please see the
TC1107 (DS21356), TC1108 (DS21357), TC1173
(DS21362) (I
OUT
= 300 mA) data sheets.
Package Type
TC1014
TC1015
TC1185
V
OUT
SHDN
GND
Bypass
470 pF
Reference
Bypass Cap
(Optional)
1 µF
+
V
IN
V
IN
V
OUT
1
5
2
4
3
Shutdown Control
(from Power Control Logic)
Bypass
SHDN
5
5-Pin SOT-23
TC1014
TC1015
TC1185
1
3
4
2
V
IN
V
OUT
GND
50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown
and Reference Bypass
TC1014/TC1015/TC1185
DS21335E-page 2
© 2007 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Input Voltage .........................................................6.5V
Output Voltage........................... (-0.3V) to (V
IN
+ 0.3V)
Power Dissipation................Internally Limited (Note 7)
Maximum Voltage on Any Pin ........V
IN
+0.3V to -0.3V
Operating Temperature Range...... -40°C < T
J
< 125°C
Storage Temperature..........................-65°C to +150°C
† Notice: Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS
Electrical Specifications: V
IN
= V
R
+ 1V, I
L
= 100 µA, C
L
= 1.0 µF, SHDN > V
IH
, T
A
= +25°C, unless otherwise noted.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameter
Symbol
Min
Typ
Max
Units
Device
Test Conditions
Input Operating Voltage
V
IN
2.7
—
6.0
V
—
Note 1
Maximum Output Current
I
OUT
MAX
50
100
150
—
—
—
—
—
—
mA
TC1014
TC1015
TC1185
Output Voltage
V
OUT
V
R
– 2.5%
V
R
±0.5% V
R
+ 2.5%
V
—
Note 2
V
OUT
Temperature Coefficient
TCV
OUT
—
—
20
40
—
—
ppm/°C
—
Note 3
Line Regulation
ΔV
OUT
/
ΔV
IN
—
0.05
0c.35
%
—
(V
R
+ 1V)
≤ V
IN
≤ 6V
Load Regulation
ΔV
OUT
/
V
OUT
—
—
0.5
0.5
2
3
%
TC1014; TC1015
TC1185
I
L
= 0.1 mA to I
OUT
MAX
I
L
= 0.1 mA to I
OUT
MAX
(Note 4)
Dropout Voltage
V
IN
-V
OUT
—
—
—
—
—
2
65
85
180
270
—
—
120
250
400
mV
—
—
—
TC1015; TC1185
TC1185
I
L
= 100 µA
I
L
= 20 mA
I
L
= 50 mA
I
L
= 100 mA
I
L
= 150 mA (Note 5)
Supply Current (Note 8)
I
IN
—
50
80
µA
—
SHDN = V
IH
, I
L
= 0
Shutdown Supply Current
I
INSD
—
0.05
0.5
µA
—
SHDN = 0V
Power Supply Rejection
Ratio
PSRR
—
64
—
dB
—
F
RE
≤ 1 kHz
Output Short Circuit Current
I
OUT
SC
—
300
450
mA
—
V
OUT
= 0V
Thermal Regulation
ΔV
OUT
/
ΔP
D
—
0.04
—
V/W
—
Notes 6, 7
Thermal Shutdown Die
Temperature
T
SD
—
160
—
°C
—
Thermal Shutdown
Hysteresis
ΔT
SD
—
10
—
°C
—
Note
1:
The minimum V
IN
has to meet two conditions: V
IN
≥ 2.7V and V
IN
≥ V
R
+ V
DROPOUT
.
2:
V
R
is the regulator output voltage setting. For example: V
R
= 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
3:
4:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
5:
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
6:
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load
or line regulation effects. Specifications are for a current pulse equal to I
L
MAX
at V
IN
= 6V for T = 10 ms.
7:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power dissipation causes the device to
initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
8:
Apply for Junction Temperatures of -40°C to +85°C.
TC V
OUT
= (V
OUT
MAX
– V
OUT
MIN
)x 10
6
V
OUT
x
ΔT
© 2007 Microchip Technology Inc.
DS21335E-page 3
TC1014/TC1015/TC1185
TEMPERATURE CHARACTERISTICS
Output Noise
eN
—
600
—
nV/
√Hz
—
I
L
= I
OUT
MAX
,
F = 10 kHz
470 pF from Bypass
to GND
SHDN Input High Threshold
V
IH
45
—
—
%V
IN
—
V
IN
= 2.5V to 6.5V
SHDN Input Low Threshold
V
IL
—
—
15
%V
IN
—
V
IN
= 2.5V to 6.5V
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Specifications: V
IN
= V
R
+ 1V, I
L
= 100 µA, C
L
= 1.0 µF, SHDN > V
IH
, T
A
= +25°C, unless otherwise noted.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameter
Symbol
Min
Typ
Max
Units
Device
Test Conditions
Note
1:
The minimum V
IN
has to meet two conditions: V
IN
≥ 2.7V and V
IN
≥ V
R
+ V
DROPOUT
.
2:
V
R
is the regulator output voltage setting. For example: V
R
= 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
3:
4:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
5:
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
6:
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load
or line regulation effects. Specifications are for a current pulse equal to I
L
MAX
at V
IN
= 6V for T = 10 ms.
7:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power dissipation causes the device to
initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
8:
Apply for Junction Temperatures of -40°C to +85°C.
TC V
OUT
= (V
OUT
MAX
– V
OUT
MIN
)x 10
6
V
OUT
x
ΔT
Electrical Specifications: V
IN
= V
R
+ 1V, I
L
= 100 µA, C
L
= 1.0 µF, SHDN > V
IH
, T
A
= +25°C, unless otherwise noted.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges:
Extended Temperature Range
T
A
-40
—
+125
°C
Operating Temperature Range
T
A
-40
—
+125
°C
Storage Temperature Range
T
A
-65
—
+150
°C
Thermal Package Resistances:
Thermal Resistance, 5L-SOT-23
θ
JA
—
256
—
°C/W
TC1014/TC1015/TC1185
DS21335E-page 4
© 2007 Microchip Technology Inc.
2.0
TYPICAL PERFORMANCE CURVES
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
FIGURE 2-1:
Dropout Voltage vs.
Temperature.
FIGURE 2-2:
Dropout Voltage vs.
Temperature.
FIGURE 2-3:
Ground Current vs. Input
Voltage (V
IN
).
FIGURE 2-4:
Dropout Voltage vs.
Temperature.
FIGURE 2-5:
Dropout Voltage vs.
Temperature.
FIGURE 2-6:
Ground Current vs. Input
Voltage (V
IN
).
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Dropout Voltage vs. Temperature
0.000
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
0.018
0.020
-40
-20
0
20
50
70
125
TEMPERATURE (
°C)
DROPOUT VOLTAGE (V)
C
IN
= 1
µF
C
OUT
= 1
µF
V
OUT
= 3.3V
I
LOAD
= 10mA
0.000
0.020
0.040
0.060
0.080
0.100
0.120
0.140
0.160
0.180
0.200
-40
-20
0
20
50
70
125
DROPOUT VOLTAGE (V)
TEMPERATURE (
°C)
C
IN
= 1
µF
C
OUT
= 1
µF
Dropout Voltage vs. Temperature
V
OUT
= 3.3V
I
LOAD
= 100mA
0
10
20
30
40
50
60
70
80
90
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
GND CURRENT (
µ
A)
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
V
IN
(V)
C
IN
= 1
µF
C
OUT
= 1
µF
Ground Current vs. V
IN
V
OUT
= 3.3V
I
LOAD
= 10mA
Dropout Voltage vs. Temperature
0.000
0.010
0.020
0.030
0.040
0.050
0.060
0.070
0.080
0.090
0.100
-40
-20
0
20
50
70
125
DROPOUT VOLTAGE (V)
TEMPERATURE (
°C)
C
IN
= 1
µF
C
OUT
= 1
µF
V
OUT
= 3.3V
I
LOAD
= 50mA
0.000
0.050
0.100
0.150
0.200
0.250
0.300
-40
-20
0
20
50
70
125
DROPOUT VOLTAGE (V)
TEMPERATURE (
°C)
C
IN
= 1
µF
C
OUT
= 1
µF
Dropout Voltage vs. Temperature
V
OUT
= 3.3V
I
LOAD
= 150mA
0
10
20
30
40
50
60
70
80
90
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
GND CURRENT (
µ
A)
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
V
IN
(V)
C
IN
= 1
µF
C
OUT
= 1
µF
Ground Current vs. V
IN
V
OUT
= 3.3V
I
LOAD
= 100mA
© 2007 Microchip Technology Inc.
DS21335E-page 5
TC1014/TC1015/TC1185
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
FIGURE 2-7:
Ground Current vs. Input
Voltage (V
IN
).
FIGURE 2-8:
Output Voltage (V
OUT
) vs.
Input Voltage (V
IN
).
FIGURE 2-9:
Output Voltage (V
OUT
) vs.
Temperature.
FIGURE 2-10:
Output Voltage (V
OUT
) vs.
Input Voltage (V
IN
).
FIGURE 2-11:
Output Voltage (V
OUT
) vs.
Temperature.
0
10
20
30
40
50
60
70
80
1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
GND CURRENT (
µ
A)
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
V
IN
(V)
C
IN
= 1
µF
C
OUT
= 1
µF
Ground Current vs. V
IN
V
OUT
= 3.3V
I
LOAD
= 150mA
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
V
IN
(V)
C
IN
= 1
µF
C
OUT
= 1
µF
I
LOAD
= 100mA
V
OUT
(V)
V
OUT
vs. V
IN
V
OUT
= 3.3V
I
LOAD
= 100mA
Output Voltage vs. Temperature
3.274
3.276
3.278
3.280
3.282
3.284
3.286
3.288
3.290
-40
-20
-10
0
20
40
85
125
V
OUT
(V)
TEMPERATURE (
°C)
V
OUT
= 3.3V
I
LOAD
= 150mA
C
IN
= 1
µF
C
OUT
= 1
µF
V
IN
= 4.3V
0
0.5
1
1.5
2
2.5
3
3.5
0
0.5 1
1.5 2 2.5 3
3.5 4
4.5 5
5.5 6
6.5 7
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
V
IN
(V)
C
IN
= 1
µF
C
OUT
= 1
µF
V
OUT
(V)
V
OUT
vs. V
IN
V
OUT
= 3.3V
I
LOAD
= 0
3.275
3.280
3.285
3.290
3.295
3.300
3.305
3.310
3.315
3.320
-40
-20
-10
0
20
40
85
125
TEMPERATURE (
°
C)
Output Voltage vs. Temperature
V
OUT
(V)
V
OUT
= 3.3V
I
LOAD
= 10mA
C
IN
= 1
µF
C
OUT
= 1
µF
V
IN
= 4.3V
TC1014/TC1015/TC1185
DS21335E-page 6
© 2007 Microchip Technology Inc.
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
FIGURE 2-12:
Output Voltage (V
OUT
) vs.
Temperature.
FIGURE 2-13:
I
GND
vs. Temperature.
FIGURE 2-14:
Output Voltage (V
OUT
) vs.
Temperature.
FIGURE 2-15:
I
GND
vs. Temperature.
FIGURE 2-16:
AC Characteristics.
4.985
4.990
4.995
5.000
5.005
5.010
5.015
5.020
5.025
-40
-20
-10
0
20
40
85
125
Output Voltage vs. Temperature
V
OUT
(V)
TEMPERATURE (
°C)
V
OUT
= 5V
I
LOAD
= 10mA
C
IN
= 1
µF
C
OUT
= 1
µF
V
IN
= 6V
Temperature vs. Quiescent Current
0
10
20
30
40
50
60
70
-40
-20
-10
0
20
40
85
125
GND CURRENT (
µ
A)
TEMPERATURE (
°C)
V
OUT
= 5V
I
LOAD
= 10mA
C
IN
= 1
µF
C
OUT
= 1
µF
V
IN
= 6V
4.974
4.976
4.978
4.980
4.982
4.984
4.986
4.988
4.990
4.992
4.994
-40
-20
-10
0
20
40
85
125
Output Voltage vs. Temperature
V
OUT
(V)
TEMPERATURE (
°C)
V
OUT
= 5V
I
LOAD
= 150mA
C
IN
= 1
µF
C
OUT
= 1
µF
V
IN
= 6V
0
10
20
30
40
50
60
70
80
-40
-20
-10
0
20
40
85
125
Temperature vs. Quiescent Current
GND CURRENT (
μ
A)
TEMPERATURE (
°C)
V
OUT
= 5V
I
LOAD
= 150mA
C
IN
= 1
μF
C
OUT
= 1
μF
V
IN
= 6V
10.0
1.0
0.1
0.0
0.01K 0.1K
1K
10K
100K
1000K
FREQUENCY (Hz)
Output Noise vs. Frequency
NOISE (
μ
V/
√
Hz)
R
LOAD
= 50
Ω
C
OUT
= 1
μF
C
IN
= 1
μF
C
BYP
= 0
1000
100
10
1
0.1
0.01
0
10 20 30 40 50 60 70 80 90 100
LOAD CURRENT (mA)
Stability Region vs. Load Current
C
OUT
ESR
(Ω
)
C
OUT
= 1
μF
to 10
μF
Stable Region
Stable Region
-30
-35
-40
-45
-50
-60
-55
-65
-70
-75
-80
0.01K 0.1K
1K
10K
100K 1000K
FREQUENCY (Hz)
Power Supply Rejection Ratio
PSRR (dB)
I
OUT
=
10mA
V
INDC
=
4V
V
INAC
=
100mVp-p
V
OUT
=
3V
C
IN
=
0
C
OUT
=
1
μF
© 2007 Microchip Technology Inc.
DS21335E-page 7
TC1014/TC1015/TC1185
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
FIGURE 2-17:
Measure Rise Time of 3.3V
with Bypass Capacitor.
FIGURE 2-18:
Measure Fall Time of 3.3V
with Bypass Capacitor.
FIGURE 2-19:
Measure Rise Time of 3.3V
without Bypass Capacitor.
FIGURE 2-20:
Measure Fall Time of 3.3V
without Bypass Capacitor.
V
SHDN
V
OUT
Measure Rise Time of 3.3V LDO With Bypass Capacitor
Conditions: C
IN
= 1
μF, C
OUT
= 1
μF, C
BYP
= 470pF, I
LOAD
= 100mA
V
IN
= 4.3V, Temp = 25
°C, Rise Time = 448μS
V
SHDN
V
OUT
Measure Fall Time of 3.3V LDO With Bypass Capacitor
Conditions: C
IN
= 1
μF, C
OUT
= 1
μF, C
BYP
= 470pF, I
LOAD
= 50mA
V
IN
= 4.3V, Temp = 25
°C, Fall Time = 100μS
Measure Rise Time of 3.3V LDO Without Bypass Capacitor
Conditions: C
IN
= 1
μF, C
OUT
= 1
μF, C
BYP
= 0pF, I
LOAD
= 100mA
V
IN
= 4.3V, Temp = 25
°C, Rise Time = 184μS
V
SHDN
V
OUT
V
OUT
V
SHDN
Measure Fall Time of 3.3V LDO Without Bypass Capacitor
Conditions: C
IN
= 1
μF, C
OUT
= 1
μF, C
BYP
= 0pF, I
LOAD
= 100mA
V
IN
= 4.3V, Temp = 25
°C, Fall Time = 52μS
TC1014/TC1015/TC1185
DS21335E-page 8
© 2007 Microchip Technology Inc.
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
FIGURE 2-21:
Measure Rise Time of 5.0V
with Bypass Capacitor.
FIGURE 2-22:
Measure Fall Time of 5.0V
with Bypass Capacitor.
FIGURE 2-23:
Measure Rise Time of 5.0V
without Bypass Capacitor.
FIGURE 2-24:
Measure Fall Time of 5.0V
without Bypass Capacitor.
Measure Rise Time of 5.0V LDO With Bypass Capacitor
Conditions: C
IN
= 1
μF, C
OUT
= 1
μF, C
BYP
= 470pF, I
LOAD
= 100mA
V
IN
= 6V, Temp = 25
°C, Rise Time = 390μS
V
SHDN
V
OUT
V
SHDN
V
OUT
Measure Fall Time of 5.0V LDO With Bypass Capacitor
Conditions: C
IN
= 1
μF, C
OUT
= 1
μF, C
BYP
= 470pF, I
LOAD
= 50mA
V
IN
= 6V, Temp = 25
°C, Fall Time = 167μS
Measure Rise Time of 5.0V LDO Without Bypass Capacitor
Conditions: C
IN
= 1
μF, C
OUT
= 1
μF, C
BYP
= 0pF, I
LOAD
= 100mA
V
IN
= 6V, Temp = 25
°C, Rise Time = 192μS
V
SHDN
V
OUT
V
OUT
V
SHDN
Measure Fall Time of 5.0V LDO Without Bypass Capacitor
Conditions: C
IN
= 1
μF, C
OUT
= 1
μF, C
BYP
= 0pF, I
LOAD
= 100mA
V
IN
= 6V, Temp = 25
°C, Fall Time = 88μS
© 2007 Microchip Technology Inc.
DS21335E-page 9
TC1014/TC1015/TC1185
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
FIGURE 2-25:
Load Regulation of 3.3V
LDO.
FIGURE 2-26:
Load Regulation of 3.3V
LDO.
FIGURE 2-27:
Load Regulation of 3.3V
LDO.
FIGURE 2-28:
Load Regulation of 3.3V
LDO.
V
OUT
I
LOAD
Load Regulation of 3.3V LDO
Conditions: C
IN
= 1
μ
F, C
OUT
= 2.2
μ
F, C
BYP
= 470pF,
V
IN
= V
OUT
+ 0.25V, Temp = 25
°
C
I
LOAD
= 50mA switched in at 10kHz, V
OUT
is AC coupled
V
OUT
I
LOAD
Load Regulation of 3.3V LDO
Conditions: C
IN
= 1
μF, C
OUT
= 2.2
μF, C
BYP
= 470pF,
V
IN
= V
OUT
+ 0.25V, Temp = 25
°C
I
LOAD
= 150mA switched in at 10kHz, V
OUT
is AC coupled
V
OUT
I
LOAD
Load Regulation of 3.3V LDO
Conditions: C
IN
= 1
μF, C
OUT
= 2.2
μF, C
BYP
= 470pF,
V
IN
= V
OUT
+ 0.25V, Temp = 25
°C
I
LOAD
= 100mA switched in at 10kHz, V
OUT
is AC coupled
V
IN
Line Regulation of 3.3V LDO
Conditions: V
IN
= 4V, + 1V Squarewave @2.5kHz
C
IN
= 0
μF, C
OUT
= 1
μF, C
BYP
= 470pF,
I
LOAD
= 100mA, V
IN
& V
OUT
are AC coupled
V
OUT
TC1014/TC1015/TC1185
DS21335E-page 10
© 2007 Microchip Technology Inc.
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
FIGURE 2-29:
Line Regulation of 5.0V
LDO.
FIGURE 2-30:
Thermal Shutdown
Response of 5.0V LDO.
C
IN
= 0
μF, C
OUT
= 1
μF, C
BYP
= 470pF,
I
LOAD
= 100mA, V
IN
& V
OUT
are AC coupled
Line Regulation of 5.0V LDO
Conditions: V
IN
= 6V, + 1V Squarewave @2.5kHz
V
IN
V
OUT
V
OUT
Thermal Shutdown Response of 5.0V LDO
Conditions: V
IN
= 6V, C
IN
= 0
μF, C
OUT
= 1
μF
I
LOAD
was increased until temperature of die reached about 160
°
C, at
which time integrated thermal protection circuitry shuts the regulator
off when die temperature exceeds approximately 160
°
C. The regulator
remains off until die temperature drops to approximately 150
°
C.