3.3V Low-Noise, Ultra-Precision 1:4 LVDS Fanout Buffer/Translator with Internal Termination

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DS20005608A-page 1

SY89833AL

Features

• Ultra-Low Jitter Design:

- 80 fs

RMS

 Additive Phase Jitter (typical)

• Guaranteed AC Performance Over Temperature

and Voltage:
- DC-to > 2 GHz throughput
- <470 ps Propagation Delay (IN-to-Q)
- <20 ps Within-Device Skew
- <190 ps Rise/Fall Times

• Unique Input Termination and V

T

 Pin Accepts DC- 

and AC-Coupled Inputs

• High-Speed LVDS Outputs
• 3.3V Power Supply Operation
• Industrial Temperature Range: –40°C to +85°C
• Available in 16-Pin (3 mm × 3 mm) QFN Package

Applications

• Processor Clock Distribution
• SONET Clock Distribution
• Fibre Channel Clock Distribution
• Gigabit Ethernet Clock Distribution

General Description

The SY89833AL is a lower noise version of the
SY89833L 3.3V, high-speed 2 GHz differential, low
voltage differential swing (LVDS) 1:4 fanout buffer
optimized for ultra-low skew applications. Within device
skew is guaranteed to be less than 20 ps over supply
voltage and temperature.
The differential input buffer has a unique internal
termination design that allows access to the
termination network through a V

T

 pin. This feature

allows the device to easily interface to different logic
standards. A  V

REF-AC

 reference is included for

AC-coupled applications.
The SY89833AL is part of Microchip’s high-speed clock
synchronization family. For 2.5V applications, the
SY89832U provides similar functionality while
operating from a 2.5V ±5% supply. For applications that
require a different I/O combination, consult the
Microchip website and choose from a comprehensive
product line of high-speed, low-skew fanout buffers,
translators, and clock generators.

Package Type

SY89833AL

3x3 QFN (M)

13

14

15

16

12

11

10

9

1

2

3

4

8

7

6

5

Q1

/Q1

Q2

/Q2

IN

VT

VREF-AC

/IN

/Q0

Q0

VCC

GND

Q3

/Q3

VCC

EN

3.3V Low-Noise, Ultra-Precision 1:4 LVDS 

Fanout Buffer/Translator with Internal Termination

United States Patent No. RE44,134

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SY89833AL

DS20005608A-page 2

 2018 Microchip Technology Inc.

Functional Block Diagram

IN

/IN

D

Q

Q3

/Q3

Q2

/Q2

Q1

/Q1

Q0

/Q0

EN

(LVTTL/CMOS)

VT

50Ÿ

50Ÿ

VREF-AC

1:4

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 2018 Microchip Technology Inc.

DS20005608A-page 3

SY89833AL

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings †

Supply Voltage (V

CC

) ................................................................................................................................ –0.5V to +4.0V

Input Voltage (V

IN

) ............................................................................................................................–0.5V to V

CC

 + 0.3V

LVDS Output Current (I

OUT

)..................................................................................................................................+10 mA

Input Current Source or Sink Current on (IN, /IN) .................................................................................................±50 mA
V

T

 Current Source or Sink Current on (V

T

).........................................................................................................±100 mA

V

REF-AC

 Current Source or Sink Current on (V

REF-AC

) ...........................................................................................±2 mA

Operating Ratings ‡

Supply Voltage Range .............................................................................................................................. +3.0V to +3.6V

 Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability.
‡ Notice:

 The device is not guaranteed to function outside its operating ratings.

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SY89833AL

DS20005608A-page 4

 2018 Microchip Technology Inc.

TABLE 1-1:

ELECTRICAL CHARACTERISTICS

Electrical Characteristics:

 T

A

 = –40°C to +85°C, unless otherwise stated. (

Note 1

)

.

Symbol

Parameters

Min.

Typ.

Max.

Units

Conditions

V

CC

Power Supply Voltage Range

3.0

3.3

3.6

V

I

CC

Power Supply Current

75

100

mA

No load; max. V

CC

R

IN

Input Resistance (IN-to-V

T

)

45

50

55

R

DIFF-IN

Differential Input Resistance 
(IN-to-/IN)

90

100

110

V

IH

Input High Voltage (IN-to-/IN)

1.2

V

CC

V

V

IL

Input Low Voltage (IN-to-/IN)

0

V

IH

 - 

0.1

V

V

IN

Input Voltage Swing (IN-to-/IN)

0.1

1.7

V

See 

Figure 5-3

V

DIFF_IN

Differential Input Voltage

0.2

V

See 

Figure 5-4

|I

IN

|

Input Current (IN, /IN)

45

mA

Note 2

V

REF-AC

Reference Voltage

V

CC

 - 

1.525

V

CC

 - 

1.425

V

CC

 - 

1.325

V

Note 1:

The circuit is designed to meet the DC specifications shown in the above table after thermal equilibrium 
has been established.

2:

Due to the internal termination (see "Input Buffer Structure" section) the input current depends on the 
applied voltages at IN, /IN, and V

T

 inputs. Do not apply a combination of voltages that causes the input 

current to exceed the maximum limit.

TABLE 1-2:

LVDS OUTPUTS DC ELECTRICAL CHARACTERISTICS

Electrical Characteristics:

 V

CC

 = 3.3V ±10%, R

L

 = 100Ω across the outputs; T

A

 = –40°C to +85°C. (

Note 1

)

Symbol

Parameters

Min.

Typ.

Max.

Units

Conditions

V

OUT

Output Voltage Swing

250

325

mV

see 

Figure 5-3

V

DIFF_OUT

Differential Output Voltage Swing

500

650

mV

see 

Figure 5-4

V

OCM

Output Common-Mode Voltage

1.125

1.275

V

∆V

OCM

Change in Common-Mode Voltage

–50

50

mV

Note 1:

The circuit is designed to meet the DC specifications shown in the above table after thermal equilibrium 
has been established.

TABLE 1-3:

LVTTL/CMOS DC ELECTRICAL CHARACTERISTICS

Electrical Characteristics:

 V

CC

 = 3.3V ±10%, T

A

 = –40°C to +85°C. (

Note 1

)

Symbol

Parameters

Min.

Typ.

Max.

Units

Conditions

V

IH

Input High Voltage

2.0

V

CC

V

V

IL

Input Low Voltage

0

0.8

V

I

IH

Input High Current

–125

30

µA

I

IL

Input Low Current

–300

µA

Note 1:

The circuit is designed to meet the DC specifications shown in the above table after thermal equilibrium 
has been established.

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DS20005608A-page 5

SY89833AL

TABLE 1-4:

AC ELECTRICAL CHARACTERISTICS

Electrical Characteristics:

 V

CC

 = 3.3V ±10%, R

L

 = 100Ω across the outputs; T

A

 = –40°C to +85°C unless otherwise 

stated. (

Note 1

)

Symbol

Parameters

Min.

Typ.

Max.

Units

Conditions

f

MAX

Maximum Frequency

2.0

GHz

V

OUT

 ≥ 200 mV

t

pd

Propagation Delay

250

470

ps

t

SKEW

Within-Device Skew

5

20

ps

Note 2

Part-to-Part Skew

200

ps

Note 3

t

S

Set-Up Time

400

ps

Note 4

t

H

Hold Time

400

ps

Note 4

t

JITTER

Additive Phase Jitter, RMS

80

fs

622.08 MHz @ 3.3V, 
Integration range: 12 kHz to 
20 MHz

t

r

/t

f

Output Rise/Fall Times (20% to 
80%)

60

110

190

ps

At Full Output Swing

Duty Cycle

47

53

%

Differential I/O

Note 1:

High-frequency AC parameters are guaranteed by design and characterization.

2:

Within device skew is measured between two different outputs under identical input transitions.

3:

Part-to-part skew is defined for two parts with identical power supply voltages at the same temperature 
and no skew at the edges at the respective inputs.

4:

Set-up and hold times apply to synchronous applications that intend to enable/disable before the next 
clock cycle. For asynchronous applications, set-up and hold times do not apply.

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SY89833AL

DS20005608A-page 6

 2018 Microchip Technology Inc.

TEMPERATURE SPECIFICATIONS

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Temperature Ranges
Junction Operating Temperature 

T

J

+125

°C

Note 1

Storage Temperature Range

T

S

–65

+150

°C

Lead Temperature

+260

°C

Soldering, 20s

Ambient Temperature

T

A

–40

+85

°C

Package Thermal Resistances (

Note 2

)

16-pin 3 mm x 3 mm QFN (Still-Air)

JA

60

°C/W

16-pin 3 mm x 3 mm QFN

Ψ

JB

33

°C/W

Note 1:

The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable 
junction temperature and the thermal resistance from junction to air (i.e., T

A

, T

J

JA

). Exceeding the 

maximum allowable power dissipation will cause the device operating junction temperature to exceed the 
maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability.

2:

Package thermal resistance assumes exposed pad is soldered (or equivalent) to the device's most nega-
tive potential on the PCB. Ψ

JB

 and 

JA

 values are determined for a 4-layer board in still-air number, unless 

otherwise stated.

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DS20005608A-page 7

SY89833AL

2.0

TYPICAL PERFORMANCE CURVES

V

CC

 = 3.3V, GND = 0V, V

IN

 = 400 mV, R

L

 = 100Ω across the outputs; T

A

 = +25°C unless otherwise stated.

FIGURE 2-1:

Output Swing vs. 

Frequency. 

FIGURE 2-2:

Propagation Delay vs. Input 

Voltage Swing.

FIGURE 2-3:

500 MHz Output.

FIGURE 2-4:

1.5 GHz Output.

FIGURE 2-5:

2 GHz Output.

Note:

The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

0

50

100

150

200

250

300

350

0

0.5

1

1.5

2

2.5

AMPLITUDE (mV)

FREQUENCY (GHz)

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SY89833AL

DS20005608A-page 8

 2018 Microchip Technology Inc.

FIGURE 2-6:

Typical Additive Phase Jitter.

FIGURE 2-7:

Timing Diagram.

-180.00

-170.00

-160.00

-150.00

-140.00

-130.00

-120.00

-110.00

-100.00

 0.0001

 0.001

0.01

 0.1

1

10

100

Ph

ase N

o

ise 

(d

Bc/H

z)

Oīset Frequency (MHz)

REF input

SY89833AL output

TYPICAL ADDITIVE PHASE JITTER @622.08MHz, 3.3V
12kHz - 20MHz RANGE = 80fs

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DS20005608A-page 9

SY89833AL

3.0

PIN DESCRIPTIONS

The descriptions of the pins are listed in 

Table 3-1

.

TABLE 3-1:

PIN FUNCTION TABLE

Pin Number

Pin Name

Description

15, 16

1, 2
3, 4
5, 6

Q0, /Q0
Q1, /Q1
Q2, /Q2
Q3, /Q3

LVDS Differential Outputs: Normally terminated with 100Ω across the pair (Q, /Q). 
See the 

LVDS Outputs

 section, 

Figure 5-1

. Unused outputs should be terminated with 

a 100Ω resistor across each pair.

8

EN

This single-ended TTL/CMOS-compatible input functions as a synchronous output 
enable. The synchronous enable ensures that enable/disable will only occur when the 
outputs are in a logic low state. Note that this input is internally connected to a 25 kΩ 
pull-up resistor and will default to logic high state (enabled) if left open.

9, 12

/IN, IN

Differential Input: This input pair is the differential signal input to the device. Input 
accepts AC- or DC-Coupled differential signals as small as 100 mV. Each pin of the 
pair internally terminates to a V

T

 pin through 50Ω. Note that this input will default to an 

intermediate state if left open. Please refer to the 

Input Interface Applications

 section 

for more details.

10

V

REF-AC

Reference Voltage: These outputs bias to V

CC 

– 1.425V.They are used when AC 

coupling the inputs (IN, /IN). For AC-coupled applications, connect V

REF-AC

 to V

T

 pin 

and bypass with 0.01 µF low-ESR capacitor to V

CC

. See the 

Input Interface 

Applications

 section for more details. Maximum sink/source current is ±1.5 mA. 

11

V

T

Input Termination Center-Tap: Each side of the differential input pair terminates to a 
V

T

 pin. The V

T

 pin provides a center-tap to a termination network for maximum 

interface flexibility. See the 

Input Interface Applications

 section for more details.

13

GND

Ground. GND pin and exposed pad must be connected to the most negative potential 
of the device ground.

7, 14

V

CC

Positive Power Supply: Bypass with 0.1 µF//0.01 µF low-ESR capacitors and place as 
close as possible to each V

CC

 pin.

TABLE 3-2:

TRUTH TABLE

IN

/IN

EN

Q

/Q

0

1

1

0

1

1

0

1

1

0

X

X

0

0  (

Note 1

)

1  (

Note 1

)

Note 1:

On next negative transition of the input signal (IN).

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SY89833AL

DS20005608A-page 10

 2018 Microchip Technology Inc.

4.0

INPUT INFORMATION

4.1

Input Stage

FIGURE 4-1:

Simplified Differential Input 

Buffer.

4.2

Input Interface Applications

FIGURE 4-2:

DC-Coupled CML Input 

Interface (Option: May Connect V

T

 to V

CC

).

FIGURE 4-3:

AC-Coupled CML Input 

Interface.

FIGURE 4-4:

DC-Coupled LVPECL Input 

Interface.

FIGURE 4-5:

AC-Coupled LVPECL Input 

Interface.

NC

CML

IN

/IN

VT

NC

SY89833AL

V

CC

 

= 3.3V

V

CC

  

= 3.3V

VREF-AC

CML

IN

/IN

VT

V

CC

 = 3.3V

V

CC

 

 = 3.3V

V

CC

 

SY89833AL

VREF-AC

0.01μF

LVPECL

IN

/IN

VT

V

CC

 

 = 3.3V

V

CC

 

 = 3.3V

SY89833AL

VREF-AC

V

CC

 

–2V

NC

50Ÿ

0.01μF

V

CC

 

IN

/IN

VT

Rpd
100Ÿ

Rpd

100Ÿ

V

CC

 = 3.3V

V

CC

 = 3.3V

SY89833AL

VREF-AC

V

CC

0.01μF

LVPECL

Maker
Microchip Technology Inc.
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