Supertex inc.
Supertex inc.
www.supertex.com
2N7000
Doc.# DSFP-2N7000
C062813
Features
►
Free from secondary breakdown
►
Low power drive requirement
►
Ease of paralleling
►
Low C
ISS
and fast switching speeds
►
Excellent thermal stability
►
Integral source-drain diode
►
High input impedance and high gain
Applications
►
Motor controls
►
Converters
►
Amplifiers
►
Switches
►
Power supply circuits
►
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
General Description
The Supertex 2N7000 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors, and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free from
thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Absolute Maximum Ratings
Parameter
Value
Drain-to-Source voltage
BV
DSS
Drain-to-Gate voltage
BV
DGS
Gate-to-Source voltage
±30V
Operating and storage temperature
-55°C to +150°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Pin Configuration
N-Channel Enhancement-Mode
Vertical DMOS FETs
GATE
SOURCE
DRAIN
TO-92
TO-92
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
S i 2 N
7 0 0 0
Y Y W W
Package may or may not include the following marks: Si or
Product Marking
Ordering Information
Part Number
Package Option
Packing
2N7000-G
TO-92
1000/Bag
2N7000-G P002
TO-92
2000/Reel
2N7000-G P003
TO-92
2000/Reel
2N7000-G P005
TO-92
2000/Reel
2N7000-G P013
TO-92
2000/Reel
2N7000-G PO14
TO-92
2000/Reel
Product Summary
BV
DSX
/BV
DGS
R
DS(ON)
(max)
I
D(ON)
(min)
60V
5.0Ω
75mA
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Typical Thermal Characteristics
Package
θ
ja
TO-92
132
O
C/W
* Mounted on FR4 board; 25mm x 25mm x 1.57mm
2
2N7000
Supertex inc.
www.supertex.com
Doc.# DSFP-2N7000
C0628213
Electrical Characteristics
(T
A
= 25°C unless otherwise specified)
Sym
Parameter
Min
Typ
Max
Units
Conditions
BV
DSS
Drain-to-Source breakdown voltage
60
-
-
V
V
GS
= 0V, I
D
= 10µA
V
GS(th)
Gate threshold voltage
0.8
-
3.0
V
V
GS
= V
DS
, I
D
= 1.0mA
I
GSS
Gate body leakage current
-
-
10
nA
V
GS
= ±15V, V
DS
= 0V
I
DSS
Zero Gate voltage drain current
-
-
1.0
µA
V
GS
= 0V, V
DS
= 48V
-
-
1.0
mA
V
GS
= 0V, V
DS
= 48V,
T
A
= 125
O
C
I
D(ON)
On-state drain current
75
-
-
mA
V
GS
= 4.5V, V
DS
= 10V
R
DS(ON)
Static Drain-to-Source
on-state resistance
-
-
5.3
Ω
V
GS
= 4.5V, I
D
= 75mA
-
-
5.0
V
GS
= 10V, I
D
= 500mA
G
FS
Forward transconductance
100
-
-
mmho V
DS
= 10V, I
D
= 200mA
C
ISS
Input capacitance
-
-
60
pF
V
GS
= 0V, V
DS
= 25V,
f = 1.0MHz
C
OSS
Common Source output capacitance
-
-
25
C
RSS
Reverse transfer capacitance
-
-
5
t
(ON)
Turn-on time
-
-
10
ns
V
DD
= 15V, I
D
= 500mA,
R
GEN
= 25Ω
t
(OFF)
Turn-off time
-
-
10
V
SD
Diode forward voltage drop
-
0.85
-
V
V
GS
= 0V, I
SD
= 200mA
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
Thermal Characteristics
Package
I
D
(continuous)
†
I
D
(pulsed)
Power Dissipation
@T
C
= 25
O
C
I
DR
†
I
DRM
TO-92
200mA
500mA
1.0W
200mA
500mA
Notes:
† I
D
(continuous) is limited by max rated T
j
.
90%
10%
90%
90%
10%
10%
Pulse
Generator
VDD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
r
INPUT
INPUT
OUTPUT
10V
VDD
R
GEN
0V
0V
t
f
3
2N7000
Supertex inc.
www.supertex.com
Doc.# DSFP-2N7000
C0628213
Typical Performance Curves
2.5
2.0
1.5
1.0
0.5
0 0 10 20 30 40 50
0 2 4 6 8 10
0.1 1.0 10 100
1.0
0.1
0.01
0.001
1.0
0.8
0.6
0.4
0.2
0
1.0
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0
0 25 50 75 100 125 150
2.0
1.0
0
TO-92
T
A
= -55
O
C
25
O
C
TO-92 (pulsed)
8V
6V
4V
0.001 0.01 0.1 1.0 10
8V
6V
4V
TO-92 (DC)
T
C
= 25
O
C
TO-92
P
D
= 1.0W
T
C
= 25
O
C
V
GS
= 10V
Saturation Characteristics
Maximum Rated Safe Operating Area
Thermal Response Characteristics
Thermal Resistance (normalized)
Transconductance vs. Drain Current
Power Dissipation vs. Case Temperature
Output Characteristics
I
D
(amperes)
V
DS
(volts)
G
FS
(seimens
)
P
D
(watts)
T
C
(
O
C)
I
D
(amperes)
V
DS
(volts)
t
p
(seconds)
I
D
(amperes)
V
DS
(volts)
I
D
(amperes)
V
GS
= 10V
V
DS
= 25V
125
O
C
2.5
2.0
1.5
1.0
0.5
0
4
2N7000
Supertex inc.
www.supertex.com
Doc.# DSFP-2N7000
C0628213
Typical Performance Curves
(cont.)
0 2 4 6 8 10
2.5
2.0
1.5
1.0
0.5
0
-50 0 50 100 150
1.1
1.0
0.9
0 0.5 1.0 1.5 2.0 2.5
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0 0.2 0.4 0.6 0.8 1.0
V
DS
= 10V
V
(th)
@ 1.0mA
V
GS
= 4.5V
5.0
4.0
3.0
2.0
1.0
0
T
A
= -55
O
C
25
O
C
40 pF
40V
80 pF
1.9
1.6
1.3
1.0
0.7
0.4
100
75
50
25
0
0 10 20 30 40
f = 1MHz
C
ISS
C
OSS
C
RSS
R
DS
@ 10V, 1.0A
Gate Drive Dynamic Characteristics
Q
G
(nanocoulombs)
V
GS(th)
(normalized
)
R
DS(ON)
(normalized
)
V
(th)
and R
DS
Variation with Temperature
On-Resistance vs. Drain Current
BV
DSS
Variation with Temperature
BV
DSS
(normalized
)
Transfer Characteristics
Capacitance vs. Drain-to-Source Voltage
C (picofarads
)
I
D
(amperes)
T
J
(
O
C)
R
DSS(ON
)
(ohms)
I
D
(amperes
)
V
GS (volts)
V
DS
(volts)
V
GS
(volts
)
T
j
(
O
C)
V
GS
= 10V
V
DS
= 25V
125
O
C
-50 0 50 100 150
Supertex inc.
does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.”
Supertex inc.
does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the
Supertex inc.
(website: http//www.supertex.com)
©2013
Supertex inc.
All rights reserved. Unauthorized use or reproduction is prohibited.
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
5
2N7000
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to
http://www.supertex.com/packaging.html
.)
Doc.# DSFP-2N7000
C062813
3-Lead TO-92 Package Outline (N3)
Symbol
A
b
c
D
E
E1
e
e1
L
Dimensions
(inches)
MIN
.170
.014
†
.014
†
.175
.125
.080
.095
.045
.500
NOM
-
-
-
-
-
-
-
-
-
MAX
.210
.022
†
.022
†
.205
.165
.105
.105
.055
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version E041009.
Seating
Plane
1
2
3
Front View
Side View
Bottom View
E1
E
D
e1
L
e
c
1 2 3
b
A
Supertex inc.
Supertex inc.
www.supertex.com
2N7000
Doc.# DSFP-2N7000
C062813
Features
►
Free from secondary breakdown
►
Low power drive requirement
►
Ease of paralleling
►
Low C
ISS
and fast switching speeds
►
Excellent thermal stability
►
Integral source-drain diode
►
High input impedance and high gain
Applications
►
Motor controls
►
Converters
►
Amplifiers
►
Switches
►
Power supply circuits
►
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
General Description
The Supertex 2N7000 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors, and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free from
thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Absolute Maximum Ratings
Parameter
Value
Drain-to-Source voltage
BV
DSS
Drain-to-Gate voltage
BV
DGS
Gate-to-Source voltage
±30V
Operating and storage temperature
-55°C to +150°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Pin Configuration
N-Channel Enhancement-Mode
Vertical DMOS FETs
GATE
SOURCE
DRAIN
TO-92
TO-92
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
S i 2 N
7 0 0 0
Y Y W W
Package may or may not include the following marks: Si or
Product Marking
Ordering Information
Part Number
Package Option
Packing
2N7000-G
TO-92
1000/Bag
2N7000-G P002
TO-92
2000/Reel
2N7000-G P003
TO-92
2000/Reel
2N7000-G P005
TO-92
2000/Reel
2N7000-G P013
TO-92
2000/Reel
2N7000-G PO14
TO-92
2000/Reel
Product Summary
BV
DSX
/BV
DGS
R
DS(ON)
(max)
I
D(ON)
(min)
60V
5.0Ω
75mA
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Typical Thermal Characteristics
Package
θ
ja
TO-92
132
O
C/W
* Mounted on FR4 board; 25mm x 25mm x 1.57mm
2
2N7000
Supertex inc.
www.supertex.com
Doc.# DSFP-2N7000
C0628213
Electrical Characteristics
(T
A
= 25°C unless otherwise specified)
Sym
Parameter
Min
Typ
Max
Units
Conditions
BV
DSS
Drain-to-Source breakdown voltage
60
-
-
V
V
GS
= 0V, I
D
= 10µA
V
GS(th)
Gate threshold voltage
0.8
-
3.0
V
V
GS
= V
DS
, I
D
= 1.0mA
I
GSS
Gate body leakage current
-
-
10
nA
V
GS
= ±15V, V
DS
= 0V
I
DSS
Zero Gate voltage drain current
-
-
1.0
µA
V
GS
= 0V, V
DS
= 48V
-
-
1.0
mA
V
GS
= 0V, V
DS
= 48V,
T
A
= 125
O
C
I
D(ON)
On-state drain current
75
-
-
mA
V
GS
= 4.5V, V
DS
= 10V
R
DS(ON)
Static Drain-to-Source
on-state resistance
-
-
5.3
Ω
V
GS
= 4.5V, I
D
= 75mA
-
-
5.0
V
GS
= 10V, I
D
= 500mA
G
FS
Forward transconductance
100
-
-
mmho V
DS
= 10V, I
D
= 200mA
C
ISS
Input capacitance
-
-
60
pF
V
GS
= 0V, V
DS
= 25V,
f = 1.0MHz
C
OSS
Common Source output capacitance
-
-
25
C
RSS
Reverse transfer capacitance
-
-
5
t
(ON)
Turn-on time
-
-
10
ns
V
DD
= 15V, I
D
= 500mA,
R
GEN
= 25Ω
t
(OFF)
Turn-off time
-
-
10
V
SD
Diode forward voltage drop
-
0.85
-
V
V
GS
= 0V, I
SD
= 200mA
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
Thermal Characteristics
Package
I
D
(continuous)
†
I
D
(pulsed)
Power Dissipation
@T
C
= 25
O
C
I
DR
†
I
DRM
TO-92
200mA
500mA
1.0W
200mA
500mA
Notes:
† I
D
(continuous) is limited by max rated T
j
.
90%
10%
90%
90%
10%
10%
Pulse
Generator
VDD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
r
INPUT
INPUT
OUTPUT
10V
VDD
R
GEN
0V
0V
t
f
3
2N7000
Supertex inc.
www.supertex.com
Doc.# DSFP-2N7000
C0628213
Typical Performance Curves
2.5
2.0
1.5
1.0
0.5
0 0 10 20 30 40 50
0 2 4 6 8 10
0.1 1.0 10 100
1.0
0.1
0.01
0.001
1.0
0.8
0.6
0.4
0.2
0
1.0
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0
0 25 50 75 100 125 150
2.0
1.0
0
TO-92
T
A
= -55
O
C
25
O
C
TO-92 (pulsed)
8V
6V
4V
0.001 0.01 0.1 1.0 10
8V
6V
4V
TO-92 (DC)
T
C
= 25
O
C
TO-92
P
D
= 1.0W
T
C
= 25
O
C
V
GS
= 10V
Saturation Characteristics
Maximum Rated Safe Operating Area
Thermal Response Characteristics
Thermal Resistance (normalized)
Transconductance vs. Drain Current
Power Dissipation vs. Case Temperature
Output Characteristics
I
D
(amperes)
V
DS
(volts)
G
FS
(seimens
)
P
D
(watts)
T
C
(
O
C)
I
D
(amperes)
V
DS
(volts)
t
p
(seconds)
I
D
(amperes)
V
DS
(volts)
I
D
(amperes)
V
GS
= 10V
V
DS
= 25V
125
O
C
2.5
2.0
1.5
1.0
0.5
0
4
2N7000
Supertex inc.
www.supertex.com
Doc.# DSFP-2N7000
C0628213
Typical Performance Curves
(cont.)
0 2 4 6 8 10
2.5
2.0
1.5
1.0
0.5
0
-50 0 50 100 150
1.1
1.0
0.9
0 0.5 1.0 1.5 2.0 2.5
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0 0.2 0.4 0.6 0.8 1.0
V
DS
= 10V
V
(th)
@ 1.0mA
V
GS
= 4.5V
5.0
4.0
3.0
2.0
1.0
0
T
A
= -55
O
C
25
O
C
40 pF
40V
80 pF
1.9
1.6
1.3
1.0
0.7
0.4
100
75
50
25
0
0 10 20 30 40
f = 1MHz
C
ISS
C
OSS
C
RSS
R
DS
@ 10V, 1.0A
Gate Drive Dynamic Characteristics
Q
G
(nanocoulombs)
V
GS(th)
(normalized
)
R
DS(ON)
(normalized
)
V
(th)
and R
DS
Variation with Temperature
On-Resistance vs. Drain Current
BV
DSS
Variation with Temperature
BV
DSS
(normalized
)
Transfer Characteristics
Capacitance vs. Drain-to-Source Voltage
C (picofarads
)
I
D
(amperes)
T
J
(
O
C)
R
DSS(ON
)
(ohms)
I
D
(amperes
)
V
GS (volts)
V
DS
(volts)
V
GS
(volts
)
T
j
(
O
C)
V
GS
= 10V
V
DS
= 25V
125
O
C
-50 0 50 100 150
Supertex inc.
does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.”
Supertex inc.
does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the
Supertex inc.
(website: http//www.supertex.com)
©2013
Supertex inc.
All rights reserved. Unauthorized use or reproduction is prohibited.
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
5
2N7000
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to
http://www.supertex.com/packaging.html
.)
Doc.# DSFP-2N7000
C062813
3-Lead TO-92 Package Outline (N3)
Symbol
A
b
c
D
E
E1
e
e1
L
Dimensions
(inches)
MIN
.170
.014
†
.014
†
.175
.125
.080
.095
.045
.500
NOM
-
-
-
-
-
-
-
-
-
MAX
.210
.022
†
.022
†
.205
.165
.105
.105
.055
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version E041009.
Seating
Plane
1
2
3
Front View
Side View
Bottom View
E1
E
D
e1
L
e
c
1 2 3
b
A