2005-2013 Microchip Technology Inc.
DS21946B-page 1
TC4421A/TC4422A
Features
• High Peak Output Current: 10A (typ.)
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Continuous Output Current: 2A (max.)
• Matched Fast Rise and Fall Times:
- 15 ns with 4,700 pF Load
- 135 ns with 47,000 pF Load
• Matched Short Propagation Delays: 42 ns (typ.)
• Low Supply Current:
- With Logic ‘1’ Input – 130 µA (typ.)
- With Logic ‘0’ Input – 33 µA (typ.)
• Low Output Impedance: 1.2
(typ.)
• Latch-Up Protected: Will Withstand 1.5A Output
Reverse Current
• Input Will Withstand Negative Inputs Up To 5V
• Pin-Compatible with the TC4420/TC4429
and TC4421/TC4422 MOSFET Drivers
• Space-Saving, Thermally-Enhanced, 8-Pin DFN
Package
Applications
• Line Drivers for Extra Heavily-Loaded Lines
• Pulse Generators
• Driving the Largest MOSFETs and IGBTs
• Local Power ON/OFF Switch
• Motor and Solenoid Driver
• LF Initiator
General Description
The TC4421A/TC4422A are improved versions of the
earlier TC4421/TC4422 family of single-output
MOSFET drivers. These devices are high-current buf-
fer/drivers capable of driving large MOSFETs and Insu-
lated Gate Bipolar Transistors (IGBTs). The
TC4421A/TC4422A have matched output rise and fall
times, as well as matched leading and falling-edge
propagation delay times. The TC4421A/TC4422A
devices also have very low cross-conduction current,
reducing the overall power dissipation of the device.
These devices are essentially immune to any form of
upset, except direct overvoltage or over-dissipation.
They cannot be latched under any conditions within
their power and voltage ratings. These parts are not
subject to damage or improper operation when up to
5V of ground bounce is present on their ground
terminals. They can accept, without damage or logic
upset, more than 1A inductive current of either polarity
being forced back into their outputs. In addition, all
terminals are fully protected against up to 4 kV of
electrostatic discharge.
The TC4421A/TC4422A inputs may be driven directly
from either TTL or CMOS (3V to 18V). In addition,
300 mV of hysteresis is built into the input, providing
noise immunity and allowing the device to be driven
from slowly rising or falling waveforms.
With both surface-mount and pin-through-hole
packages, in addition to a wide operating temperature
range, the TC4421A/TC4422A family of 9A MOSFET
drivers fit into most any application where high gate/line
capacitance drive is required.
Package Types
(1)
8-Pin
1
2
3
4
V
DD
5
6
7
8
OUTPUT
GND
V
DD
INPUT
NC
GND
OUTPUT
TC4421A
TC4422A
5-Pin TO-220
V
DD
GND
IN
P
U
T
GND
OUTP
UT
TC4421A
TC4422A
Tab is
Common
to V
DD
Note 1: Duplicate pins must both be connected for proper operation.
2: Exposed pad of the DFN package is electrically isolated.
TC4421A TC4422A
V
DD
OUTPUT
GND
OUTPUT
PDIP/SOIC
8-Pin DFN
(2)
V
DD
INPUT
NC
GND
2
3
4
5
6
7
8
1
TC4421A
TC4422A
V
DD
OUTPUT
GND
OUTPUT
TC4421A TC4422A
V
DD
OUTPUT
GND
OUTPUT
9A High-Speed MOSFET Drivers
TC4421A/TC4422A
DS21946B-page 2
2005-2013 Microchip Technology Inc.
Functional Block Diagram
Effective
Input
Output
Input
GND
V
DD
300 mV
4.7V
TC4421A
C = 25 pF
TC4422A
Inverting
Non-Inverting
130 µA
Cross-Conduction
Reduction and Pre-Drive
Circuitry
Output
2005-2013 Microchip Technology Inc.
DS21946B-page 3
TC4421A/TC4422A
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage ..................................................... +20V
Input Voltage .................... (V
DD
+ 0.3V) to (GND – 5V)
Input Current (V
IN
> V
DD
)................................... 50 mA
† Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, T
A
= +25°C with 4.5V
V
DD
18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘1’, High Input Voltage
V
IH
2.4
1.8
—
V
Logic ‘0’, Low Input Voltage
V
IL
—
1.3
0.8
V
Input Current
I
IN
–10
—
+10
µA
0V
V
IN
V
DD
Input Voltage
V
IN
–5
—
V
DD
– 0.3
V
Output
High Output Voltage
V
OH
V
DD
– 0.025
—
—
V
DC Test
Low Output Voltage
V
OL
—
—
0.025
V
DC Test
Output Resistance, High
R
OH
—
1.25
1.5
I
OUT
= 10 mA, V
DD
= 18V
Output Resistance, Low
R
OL
—
0.8
1.1
I
OUT
= 10 mA, V
DD
= 18V
Peak Output Current
I
PK
—
10.0
—
A
V
DD
= 18V
Continuous Output Current
I
DC
2
—
—
A
10V
V
DD
18V, T
A
= +25°C
(TC4421A/TC4422A CAT only)
(Note 2)
Latch-Up Protection
Withstand Reverse Current
I
REV
—
>1.5
—
A
Duty cycle
2%, t 300 µsec
Switching Time (Note 1)
Rise Time
t
R
—
28
34
ns
Figure 4-1, C
L
= 10,000 pF
Fall Time
t
F
—
26
32
ns
Figure 4-1, C
L
= 10,000 pF
Propagation Delay Time
t
D1
—
38
45
ns
Figure 4-1, C
L
= 10,000 pF
Propagation Delay Time
t
D2
—
42
49
ns
Figure 4-1, C
L
= 10,000 pF
Power Supply
Power Supply Current
I
S
—
130
250
µA
V
IN
= 3V
—
35
100
µA
V
IN
= 0V
Operating Input Voltage
V
DD
4.5
—
18
V
Note 1:
Switching times ensured by design.
2:
Tested during characterization, not production tested.
TC4421A/TC4422A
DS21946B-page 4
2005-2013 Microchip Technology Inc.
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V
V
DD
18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘1’, High Input Voltage
V
IH
2.4
—
—
V
Logic ‘0’, Low Input Voltage
V
IL
—
—
0.8
V
Input Current
I
IN
–10
—
+10
µA
0V
V
IN
V
DD
Output
High Output Voltage
V
OH
V
DD
– 0.025
—
—
V
DC Test
Low Output Voltage
V
OL
—
—
0.025
V
DC Test
Output Resistance, High
R
OH
—
—
2.0
I
OUT
= 10 mA, V
DD
= 18V
Output Resistance, Low
R
OL
—
—
1.6
I
OUT
= 10 mA, V
DD
= 18V
Switching Time (Note 1)
Rise Time
t
R
—
38
45
ns
Figure 4-1, C
L
= 10,000 pF
Fall Time
t
F
—
33
40
ns
Figure 4-1, C
L
= 10,000 pF
Propagation Delay Time
t
D1
—
50.4
60
ns
Figure 4-1, C
L
= 10,000 pF
Propagation Delay Time
t
D2
—
53
60
ns
Figure 4-1, C
L
= 10,000 pF
Power Supply
Power Supply Current
I
S
—
200
500
µA
V
IN
= 3V
—
50
150
µA
V
IN
= 0V
Operating Input Voltage
V
DD
4.5
—
18
V
Note 1:
Switching times ensured by design.
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V
V
DD
18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range (V)
T
A
–40
—
+125
°C
Maximum Junction Temperature
T
J
—
—
+150
°C
Storage Temperature Range
T
A
–65
—
+150
°C
Package Thermal Resistances
Thermal Resistance, 5L-TO-220
JA
—
71
—
°C/W
Without heat sink
Thermal Resistance, 8L-6x5 DFN
JA
—
33.2
—
°C/W
Typical 4-layer board with
vias to ground plane
Thermal Resistance, 8L-PDIP
JA
—
125
—
°C/W
Thermal Resistance, 8L-SOIC
JA
—
155
—
°C/W
2005-2013 Microchip Technology Inc.
DS21946B-page 5
TC4421A/TC4422A
2.0
TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
18V.
FIGURE 2-1:
Rise Time vs. Supply
Voltage.
FIGURE 2-2:
Rise Time vs. Capacitive
Load.
FIGURE 2-3:
Fall Time vs. Supply
Voltage.
FIGURE 2-4:
Fall Time vs. Capacitive
Load.
FIGURE 2-5:
Rise and Fall Times vs.
Temperature.
FIGURE 2-6:
Crossover Energy vs Supply
Voltage.
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0
20
40
60
80
100
120
140
160
180
4
6
8
10
12
14
16
18
Supply Voltage (V)
R
ise Time (ns)
22,000 pF
10,000 pF
1,000 pF
100 pF
0
50
100
150
200
250
300
100
1000
10000
100000
Capacitive Load (pF)
R
ise T
ime
(
n
s)
5V
10V
15V
0
20
40
60
80
100
120
140
160
180
4
6
8
10
12
14
16
18
Supply Voltage (V)
Fal
l Ti
me
(ns
)
22,000 pF
10,000 pF
1,000 pF
100 pF
0
50
100
150
200
250
300
100
1000
10000
100000
Capacitive Load (pF)
Fal
l Ti
m
e
(
n
s)
5V
15V
10V
20
25
30
35
40
45
50
55
-40 -25 -10
5
20
35
50
65
80
95 110 125
Temperature (°C)
Ti
me
(
n
s
)
t
RISE
t
FALL
V
DD
= 15V
1E-9
1E-8
1E-7
4
6
8
10
12
14
16
18
Supply Voltage (V)
C
ros
sove
r E
n
er
gy
(A
·se
c
)
10
-7
10
-8
10
-9
TC4421A/TC4422A
DS21946B-page 6
2005-2013 Microchip Technology Inc.
Note: Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
18V.
FIGURE 2-7:
Propagation Delay vs.
Supply Voltage.
FIGURE 2-8:
Propagation Delay vs. Input
Amplitude.
FIGURE 2-9:
Propagation Delay vs.
Temperature.
FIGURE 2-10:
Quiescent Supply Current
vs. Supply Voltage.
FIGURE 2-11:
Quiescent Supply Current
vs. Temperature.
FIGURE 2-12:
Input Threshold vs.
Temperature.
30
35
40
45
50
55
60
65
70
75
80
4
6
8
10
12
14
16
18
Supply Voltage (V)
P
rop
a
g
ation
D
e
lay
(
n
S
)
t
D2
t
D1
C
LOAD
= 10,000 pF
40
45
50
55
60
65
70
75
2
3
4
5
6
7
8
9
10
Input Amplitude (V)
P
ro
p
aga
tio
n D
e
lay (
n
s)
t
D1
t
D2
V
DD
= 12V
30
35
40
45
50
55
60
-40 -25 -10
5
20
35
50
65
80
95 110 125
Temperature (°C)
Pr
opa
gat
ion
D
e
lay (
n
s)
t
D2
t
D1
V
DD
= 12V
V
IN
= 5V
C
LOAD
= 10,000 pF
20
40
60
80
100
120
140
4
6
8
10
12
14
16
18
Supply Voltage (V)
I
Q
U
IESCENT
(µ
A
)
INPUT = High
INPUT = Low
20
40
60
80
100
120
140
160
180
200
220
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (°C)
I
Q
U
IESCENT
(µ
A
)
INPUT = Low
INPUT = High
V
DD
= 18V
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
-40 -25 -10
5
20
35
50
65
80
95 110 125
Temperature (°C)
Inp
u
t Th
res
hold
(V
)
V
IH
V
IL
V
DD
= 12V
2005-2013 Microchip Technology Inc.
DS21946B-page 7
TC4421A/TC4422A
Note: Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
18V.
FIGURE 2-13:
Input Threshold vs. Supply
Voltage.
FIGURE 2-14:
High-State Output
Resistance vs. Supply Voltage.
FIGURE 2-15:
Low-State Output
Resistance vs. Supply Voltage.
FIGURE 2-16:
Supply Current vs.
Capactive Load (V
DD
= 18V).
FIGURE 2-17:
Supply Current vs.
Capactive Load (V
DD
= 12V).
FIGURE 2-18:
Supply Current vs.
Capactive Load (V
DD
= 6V).
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
4
6
8
10
12
14
16
18
Supply Voltage (V)
In
p
u
t Th
re
s
h
o
ld (
V
)
V
IH
V
IL
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
4
6
8
10
12
14
16
18
Supply Voltage (V)
R
OUT-HI
(:
)
T
J
= 25°C
T
J
= 150°C
V
IN
= 5V (TC4422A)
V
IN
= 0V (TC4421A)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4
6
8
10
12
14
16
18
Supply Voltage (V)
R
OUT-LO
(:
)
T
J
= 25°C
T
J
= 150°C
V
IN
= 0V (TC4422A)
V
IN
= 5V (TC4421A)
0
20
40
60
80
100
120
140
160
180
100
1,000
10,000
100,000
Capacitive Load (pF)
S
u
p
p
ly
C
u
rr
en
t
(m
A
)
2 MHz
1 MHz
200 kHz
100 kHz
50 kHz
10 kHz
V
DD
= 18V
0
20
40
60
80
100
120
140
160
180
200
100
1,000
10,000
100,000
Capacitive Load (pF)
S
u
p
p
ly
C
u
rr
en
t
(m
A
)
2 MHz
1 MHz
200 kHz
100 kHz
50 kHz
10 kHz
V
DD
= 12V
0
20
40
60
80
100
120
140
160
180
200
220
100
1,000
10,000
100,000
Capacitive Load (pF)
S
upp
ly C
u
rr
e
nt
(m
A
)
2 MHz
1 MHz
200 kHz
100 kHz
50 kHz
10 kHz
V
DD
= 6V
TC4421A/TC4422A
DS21946B-page 8
2005-2013 Microchip Technology Inc.
Note: Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
18V.
FIGURE 2-19:
Supply Current vs.
Frequency (V
DD
= 18V).
FIGURE 2-20:
Supply Current vs.
Frequency (V
DD
= 12V).
FIGURE 2-21:
Supply Current vs.
Frequency (V
DD
= 6V).
0
20
40
60
80
100
120
140
160
180
10
100
1000
10000
Frequency (kHz)
S
u
p
p
ly
C
u
rr
en
t
(m
A
)
V
DD
= 18V
470 pF
1000 pF
10,000 pF
22,000 pF
47,000 pF
0.1 µF
0
20
40
60
80
100
120
140
160
180
200
10
100
1000
10000
Frequency (kHz)
S
upp
ly C
u
rr
e
nt
(m
A
)
470 pF
1000 pF
10,000 pF
22,000 pF
47,000 pF
0.1 µF
V
DD
= 12V
0
20
40
60
80
100
120
140
160
180
200
220
10
100
1000
10000
Frequency (kHz)
Su
pp
ly
C
u
rr
e
nt
(m
A
)
470 pF
1000 pF
10,000 pF
22,000 pF
47,000 pF
0.1 µF
V
DD
= 6V
2005-2013 Microchip Technology Inc.
DS21946B-page 9
TC4421A/TC4422A
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
3.1
Supply Input (V
DD
)
The V
DD
input is the bias supply for the MOSFET driver
and is rated for 4.5V to 18V with respect to the ground
pin. The V
DD
input should be bypassed to ground with
a local ceramic capacitor. The value of the capacitor
should be chosen based on the capacitive load that is
being driven. A minimum value of 1.0 µF is suggested.
3.2
Control Input
The MOSFET driver input is a high-impedance,
TTL/CMOS-compatible input. The input also has
300 mV of hysteresis between the high and low
thresholds that prevents output glitching even when the
rise and fall time of the input signal is very slow.
3.3
CMOS Push-Pull Output
The MOSFET driver output is a low-impedance,
CMOS, push-pull style output capable of driving a
capacitive load with 9.0A peak currents. The MOSFET
driver output is capable of withstanding 1.5A peak
reverse currents of either polarity.
3.4
Ground
The ground pins are the return path for the bias current
and for the high peak currents that discharge the load
capacitor. The ground pins should be tied into a ground
plane or have very short traces to the bias supply
source return.
3.5
Exposed Metal Pad
The exposed metal pad of the 6x5 DFN package is not
internally connected to any potential. Therefore, this
pad can be connected to a ground plane or other
copper plane on a Printed Circuit Board (PCB) to aid in
heat removal from the package.
3.6
Metal Tab
The metal tab of the TO-220 package is connected to
the V
DD
potential of the device. This connection to V
DD
can be used as a current carrying path for the device.
Pin No.
8-Pin PDIP,
SOIC
Pin No.
8-Pin DFN
Pin No.
5-Pin TO-220
Symbol
Description
1
1
—
V
DD
Supply input, 4.5V to 18V
2
2
1
INPUT
Control input, TTL/CMOS-compatible input
3
3
—
NC
No connection
4
4
2
GND
Ground
5
5
4
GND
Ground
6
6
5
OUTPUT
CMOS push-pull output
7
7
—
OUTPUT
CMOS push-pull output
8
8
3
V
DD
Supply input, 4.5V to 18V
—
PAD
—
NC
Exposed metal pad
—
—
TAB
V
DD
Metal tab is at the V
DD
potential
TC4421A/TC4422A
DS21946B-page 10
2005-2013 Microchip Technology Inc.
4.0
APPLICATIONS INFORMATION
FIGURE 4-1:
Switching Time Test Circuits.
Inverting Driver
Non-Inverting Driver
Input
t
D1
tF
t
R
t
D2
Input: 100 kHz,
square wave,
t
RISE
= t
FALL
10 nsec
Output
Input
Output
t
D1
t
F
t
R
t
D2
+5V
10%
90%
10%
90%
10%
90%
+18V
0V
90%
10%
10%
10%
90%
+5V
+18V
0V
0V
0V
90%
2
6
7
5
4
1
8
C
L
= 10,000 pF
0.1 µF
4.7 µF
Input
V
DD
= 18V
Output
0.1 µF
TC4421A
TC4422A
Note: Pinout shown is for the DFN, PDIP and SOIC packages.
V
DD
V
DD
Input
GND
GND
Output
Output