2005-2013 Microchip Technology Inc.
DS21939B-page 1
TC4426AM/TC4427AM/TC4428AM
Features
• High Peak Output Current: 1.5A
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability:
- 1000 pF in 25 ns (typ.)
• Short Delay Times: 30 ns (typ.)
• Matched Rise, Fall and Delay Times
• Low Supply Current:
- With Logic ‘1’ Input – 1 mA (typ.)
- With Logic ‘0’ Input – 100 µA (typ.)
• Low Output Impedance: 7
(typ.)
• Latch-Up Protected: Will Withstand 0.5A Reverse
Current
• Input: Will Withstand Negative Inputs Up to 5V
• ESD Protected: 4 kV
• Pin-compatible with the
TC426M/TC427M/TC428M and
TC4426M/TC4427M/TC4428M
• Wide Operating Temperature Range:
- -55°C to +125°C
• See TC4426A/TC4427A/TC4428A Data Sheet
(DS21423) for additional temperature range and
packaging offerings
Applications
• Switch-mode Power Supplies
• Line Drivers
• Pulse Transformer Drive
General Description
The TC4426AM/TC4427AM/TC4428AM are improved
versions of the earlier TC4426M/TC4427M/TC4428M
family of MOSFET drivers. In addition to matched rise
and fall times, the TC4426AM/TC4427AM/TC4428AM
devices have matched leading and falling edge
propagation delay times.
These devices are highly latch-up resistant under any
conditions within their power and voltage ratings. They
are not subject to damage when up to 5V of noise
spiking (of either polarity) occurs on the ground pin.
They can accept, without damage or logic upset, up to
500 mA of reverse current (of either polarity) being
forced back into their outputs. All terminals are fully
protected against Electrostatic Discharge (ESD) up to
4 kV.
The TC4426AM/TC4427AM/TC4428AM MOSFET
drivers can easily charge/discharge 1000 pF gate
capacitances in under 30 ns, while providing low
enough impedances in both the on and off states to
ensure the MOSFET's intended state will not be
affected, even by large transients.
Package Types
8-Pin CERDIP
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
V
DD
T
C
4426AM
T
C
4427AM
TC4426AM TC4427AM
NC
OUT A
OUT B
V
DD
TC4428AM
NC
OUT A
OUT B
V
DD
T
C
4428AM
1.5A Dual High-Speed Power MOSFET Drivers
TC4426AM/TC4427AM/TC4428AM
DS21939B-page 2
2005-2013 Microchip Technology Inc.
Functional Block Diagram
Effective
Input C = 12 pF
(Each Input)
TC4426AM/TC4427AM/TC4428AM
(1)
Output
Input
GND
(2)
V
DD
300 mV
4.7V
Inverting
Non-Inverting
Note 1: The TC4426AM has two inverting drivers; the TC4427AM has two non-inverting drivers;
the TC4428AM has one inverting and one non-inverting driver.
2: Ground any unused driver input.
2005-2013 Microchip Technology Inc.
DS21939B-page 3
TC4426AM/TC4427AM/TC4428AM
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Supply Voltage ................................................................+22V
Input Voltage, IN A or IN B .......... (V
DD
+ 0.3V) to (GND – 5V)
† Notice: Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to the
device. These are stress ratings only and functional operation
of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not
implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TEMPERATURE CHARACTERISTICS
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V
V
DD
18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘1’, High Input Voltage
V
IH
2.4
—
—
V
Logic ‘0’, Low Input Voltage
V
IL
—
—
0.8
V
Input Current
I
IN
-1.0
-10
—
—
+1.0
+10
µA
0V
V
IN
V
DD
Output
High Output Voltage
V
OH
V
DD
– 0.025
—
—
V
DC TEST
Low Output Voltage
V
OL
—
—
0.025
V
DC TEST
Output Resistance
R
O
—
7
9
I
OUT
= 10 mA, V
DD
= 18V, T
A
= +25°C
—
8
12
-55°C
T
A
+125°C
Peak Output Current
I
PK
—
1.5
—
A
V
DD
= 18V
Latch-Up Protection
Withstand Reverse Current
I
REV
—
>0.5
—
A
Duty cycle
2%, t 300 µs
V
DD
= 18V
Switching Time (Note 1)
Rise Time
t
R
—
25
35
ns
T
A
= +25°C
—
30
40
-55°C
T
A
+125°C, Figure 4-1
Fall Time
t
F
—
25
35
ns
T
A
= +25°C
—
30
40
-55°C
T
A
+125°C, Figure 4-1
Delay Time
t
D1
—
30
35
ns
T
A
= +25°C
—
38
50
-55°C
T
A
+125°C, Figure 4-1
Delay Time
t
D2
—
30
35
ns
T
A
= +25°C
—
38
50
-55°C
T
A
+125°C, Figure 4-1
Power Supply
Power Supply Current
I
S
—
—
1.0
0.1
2.0
0.2
mA
V
IN
= 3V (Both inputs)
V
IN
= 0V (Both inputs), V
DD
= 18V
Note 1:
Switching times ensured by design.
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V
V
DD
18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range (M)
T
A
-55
—
+125
ºC
Maximum Junction Temperature
T
J
—
—
+150
ºC
Storage Temperature Range
T
A
-65
—
+150
ºC
Package Thermal Resistances
Thermal Resistance, 8L-CERDIP
JA
—
150
—
ºC/W
TC4426AM/TC4427AM/TC4428AM
DS21939B-page 4
2005-2013 Microchip Technology Inc.
2.0
TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, over operating temperature range with 4.5V
V
DD
18V.
FIGURE 2-1:
Rise Time vs. Supply
Voltage.
FIGURE 2-2:
Delay Time vs. Input
Amplitude.
FIGURE 2-3:
Rise and Fall Times vs.
Temperature.
FIGURE 2-4:
Fall Time vs. Supply
Voltage.
FIGURE 2-5:
Propagation Delay Time vs.
Supply Voltage.
FIGURE 2-6:
Propagation Delay Time vs.
Temperature.
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
5.0
7.5
10.0
12.5
15.0
17.5
0
20
40
60
80
100
T
A
= +25°C
V
DD
(V)
C
L
= 2200 pF
C
L
= 1500 pF
C
L
= 100 pF
C
L
= 1000 pF
C
L
= 470 pF
t
RISE
(nsec)
1
2
3
4
5
6
7
8
9
20
70
60
50
40
30
80
90
100
110
Delay Time (nsec)
Input Amplitude (V)
C
L
= 1000 pF
V
DD
= 10V
t
D1
t
D2
-100
-50
0
50
100
150
24
22
20
18
16
14
26
28
Time (nsec)
C
L
= 1000 pF
V
DD
= 18V
TEMPERATURE (
°C)
t
FALL
t
RISE
5.0
7.5
10.0
12.5
15.0
17.5
0
20
40
60
80
100
CL= 100pF
T
A
= +25°C
V
DD
(V)
C
L
= 2200pF
C
L
= 2200 pF
C
L
= 1500 pF
C
L
= 100 pF
C
L
= 1000 pF
C
L
= 470 pF
t
FALL
(nsec)
0
5
10
15
20
50
45
40
35
30
25
20
55
60
Delay Time (nsec)
V
DD
(V)
C
L
= 1000 pF
t
D1
t
D2
15
20
25
30
35
40
Delay Time (nsec)
-100
-50
0
50
100
150
C
L
= 1000 pF
V
DD
= 18V
TEMPERATURE (
°C)
t
D1
t
D2
2005-2013 Microchip Technology Inc.
DS21939B-page 5
TC4426AM/TC4427AM/TC4428AM
Note: Unless otherwise indicated, over operating temperature range with 4.5V
V
DD
18V.
FIGURE 2-7:
High-State Output
Resistance.
FIGURE 2-8:
Supply Current vs.
Frequency.
FIGURE 2-9:
Supply Current vs.
Frequency.
FIGURE 2-10:
Low-State Output
Resistance.
FIGURE 2-11:
Supply Current vs.
Capacitive Load.
FIGURE 2-12:
Supply Current vs.
Capacitive Load.
0
5
10
15
20
25
20
15
10
5
0
30
V
DD
(V)
R
DS(ON)
(
Ω
)
T
A
= +125°C
T
A
= +25°C
0
500
1000
1500
2000
2500
0
20
10
30
40
50
60
FREQUENCY (kHz)
I
SUPPLY
(mA)
V
DD
= 18V
C
L
= 2200 pF
C
L
= 1500 pF
C
L
= 1000 pF
C
L
= 100 pF
FREQUENCY (kHz)
0
500
1000
1500
2000
2500
70
60
50
40
30
20
10
0
80
I
SUPPLY
(mA)
V
DD
= 12V
C
L
= 2200 pF
C
L
= 1500 pF
C
L
= 1000 pF
C
L
= 100 pF
0
5
10
15
20
25
20
15
10
5
0
30
V
DD
(V)
R
DS(ON)
(
Ω
)
T
A
= +125°C
T
A
= +25°C
0
500
1000
1500
2000
2500
0
20
10
30
40
50
60
2 MHz
V
DD
= 18V
I
SUPPLY
(mA)
C
LOAD
(pF)
900 kHz
600 kHz
200 kHz
20 kHz
0
500
1000
1500
2000
2500
70
60
50
40
30
20
10
0
80
I
SUPPLY
(mA)
C
LOAD
(pF)
V
DD
= 12V
900 kHz
600 kHz
200 kHz
20 kHz
2 MHz
TC4426AM/TC4427AM/TC4428AM
DS21939B-page 6
2005-2013 Microchip Technology Inc.
Note: Unless otherwise indicated, over operating temperature range with 4.5V
V
DD
18V.
FIGURE 2-13:
Supply Current vs.
Frequency.
FIGURE 2-14:
Quiescent Supply Current
vs. Voltage.
FIGURE 2-15:
Supply Current vs.
Capacitive Load.
FIGURE 2-16:
Quiescent Supply Current
vs. Temperature.
0
500
1000
1500
2000
2500
30
25
20
15
10
5
0
35
40
FREQUENCY (kHz)
I
SUPPLY
(mA)
V
DD
= 6V
C
L
= 2200 pF
C
L
= 1500 pF
C
L
= 1000 pF
C
L
= 100 pF
T
A
= 25°C
BOTH INPUTS = 1
0
5
10
15
20
800
700
600
500
400
200
100
0
300
900
I
QUIESCENT
(µA)
V
DD
(V)
BOTH INPUTS = 0
0
500
1000
1500
2000
2500
30
25
15
10
5
0
35
40
I
SUPPLY
(mA)
C
LOAD
(pF)
V
DD
= 6V
900 kHz
600 kHz
200 kHz
20 kHz
2 MHz
20
-100
-50
0
50
100
150
1000
900
800
700
600
400
300
200
100
0
500
1100
I
QUIESCENT
(µA)
TEMPERATURE (
°C)
V
DD
= 18V
BOTH INPUTS = 1
BOTH INPUTS = 0
2005-2013 Microchip Technology Inc.
DS21939B-page 7
TC4426AM/TC4427AM/TC4428AM
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
3.1
Inputs A & B (IN A and IN B)
MOSFET driver IN A & B are high-impedance,
TTL/CMOS-compatible inputs. These inputs also have
300 mV of hysteresis between the high and low
thresholds, which prevents output glitching even when
the rise and fall time of the input signal is very slow.
3.2
Ground (GND)
The GND pin is the return path for both the bias current
and the high peak current that discharges the external
load capacitance. The ground pin should be tied into a
ground plane or have a very short trace to the bias sup-
ply source return.
3.3
Outputs A & B (OUT A and OUT B)
MOSFET driver OUT A & B are low-impedance,
CMOS, push-pull style outputs. The pull-down and pull-
up devices are of equal strength, making the rise and
fall times equivalent.
3.4
Supply Input (V
DD
)
The V
DD
input is the bias supply for the MOSFET driver
and is rated for 4.5V to 18V, with respect to the ground
pin. The V
DD
input should be bypassed with local
ceramic capacitors. The value of these capacitors
should be chosen based on the capacitive load that is
being driven.
8-Pin
CERDIP
Symbol
Description
1
NC
No connection
2
IN A
Input A
3
GND
Ground
4
IN B
Input B
5
OUT B
Output B
6
V
DD
Supply input
7
OUT A
Output A
8
NC
No connection
TC4426AM/TC4427AM/TC4428AM
DS21939B-page 8
2005-2013 Microchip Technology Inc.
4.0
APPLICATIONS INFORMATION
FIGURE 4-1:
Switching Time Test Circuit.
C
L
= 1000 pF
0.1 µF
4.7 µF
Inverting Driver
Non-Inverting Driver
Input
V
DD
= 18V
Input
Output
t
D1
t
F
t
R
t
D2
Input: 100 kHz,
square wave,
t
RISE
= t
FALL
10 ns
Output
Input
Output
t
D1
t
F
t
R
t
D2
+5V
10%
90%
10%
90%
10%
90%
V
DD
0V
90%
10%
10%
10%
90%
+5V
V
DD
0V
0V
0V
90%
3
2
7
6
4
5
2005-2013 Microchip Technology Inc.
DS21939B-page 9
TC4426AM/TC4427AM/TC4428AM
5.0
PACKAGING INFORMATION
5.1
Package Marking Information
8-Lead CERDIP (300 mil)
Example:
XXXXXXXX
XXXXXNNN
YYWW
TC4427A
MJA
^^
256
0543
Legend: XX...X
Customer-specific information
Y
Year code (last digit of calendar year)
YY
Year code (last 2 digits of calendar year)
WW
Week code (week of January 1 is week ‘01’)
NNN
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
*
This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note:
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
3
e
TC4426AM/TC4427AM/TC4428AM
DS21939B-page 10
2005-2013 Microchip Technology Inc.
8-Lead Ceramic Dual In-line – 300 mil (CERDIP)
10.16
9.15
8.13
.400
.360
.320
eB
Overall Row Spacing
0.51
0.46
0.41
.020
.018
.016
B
Lower Lead Width
1.65
1.40
1.14
.065
.055
.045
B1
Upper Lead Width
0.38
0.29
0.20
.015
.012
.008
c
Lead Thickness
5.08
4.13
3.18
.200
.163
.125
L
Tip to Seating Plane
10.16
9.78
9.40
.400
.385
.370
D
Overall Length
7.62
6.73
5.84
.300
.265
.230
E1
Ceramic Pkg. Width
8.13
7.75
7.37
.320
.305
.290
E
Shoulder to Shoulder Width
1.02
0.77
0.51
.040
.030
.020
A1
Standoff §
5.08
4.57
4.06
.200
.180
.160
A
Top to Seating Plane
2.54
.100
p
Pitch
8
8
n
Number of Pins
MAX
NOM
MIN
MAX
NOM
MIN
Dimension Limits
MILLIMETERS
INCHES*
Units
JEDEC Equivalent: MS-030
Drawing No. C04-010
*Controlling Parameter
1
2
D
n
E1
c
eB
E
p
L
A2
B
B1
A
A1
Note:
For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging